WO2003019691A3 - Manufacturing of non-volatile resistance variable devices and programmable memory cells - Google Patents

Manufacturing of non-volatile resistance variable devices and programmable memory cells Download PDF

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Publication number
WO2003019691A3
WO2003019691A3 PCT/US2002/027929 US0227929W WO03019691A3 WO 2003019691 A3 WO2003019691 A3 WO 2003019691A3 US 0227929 W US0227929 W US 0227929W WO 03019691 A3 WO03019691 A3 WO 03019691A3
Authority
WO
WIPO (PCT)
Prior art keywords
chalcogenide
chalcogenide material
silver
manufacturing
memory cells
Prior art date
Application number
PCT/US2002/027929
Other languages
French (fr)
Other versions
WO2003019691A2 (en
Inventor
Kristy A Campbell
John T Moore
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to KR1020047003081A priority Critical patent/KR100800254B1/en
Priority to EP02770455A priority patent/EP1430548B1/en
Priority to DE60216942T priority patent/DE60216942T2/en
Priority to AU2002335692A priority patent/AU2002335692A1/en
Priority to CN028170202A priority patent/CN1550048B/en
Priority to JP2003523032A priority patent/JP4067490B2/en
Publication of WO2003019691A2 publication Critical patent/WO2003019691A2/en
Publication of WO2003019691A3 publication Critical patent/WO2003019691A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of the switching material, e.g. post-treatment, doping
    • H10N70/046—Modification of the switching material, e.g. post-treatment, doping by diffusion, e.g. photo-dissolution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Abstract

A first conductive electrode material (16) is formed on a substrate (12). Chalcogenide comprising material (22) is formed thereover. The chalcogenide material comprises AxSey, A preferable being Ge and Si. A silver comprising layer (24) is formed over the chalcogenide material. The silver is irradiated effective to break a chalcogenide bond of the chalcogenide material at an interface of the silver comprising layer and chalcogenide material and diffuse at least some of the silver into the chalcogenide material. After the irradiating, the chalcogenide material outer surface is exposed to an iodine comprising fluid effective to reduce roughness of the chalcogenide material outer surface from what it was prior to the exposing. After the exposing, a second conductive electrode (26) material is deposited over the chalcogenide material, which is continuous and completely covering at least over the chalcogenide material, and the second conductive electrode material is formed into an electrode of the device.
PCT/US2002/027929 2001-08-29 2002-08-28 Manufacturing of non-volatile resistance variable devices and programmable memory cells WO2003019691A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020047003081A KR100800254B1 (en) 2001-08-29 2002-08-28 Manufacturing of non-volatile resistance variable devices and programmable memory cells
EP02770455A EP1430548B1 (en) 2001-08-29 2002-08-28 Manufacturing of non-volatile resistance variable devices and programmable memory cells
DE60216942T DE60216942T2 (en) 2001-08-29 2002-08-28 MANUFACTURE OF NON-RESISTIVE RESISTANT COMPONENTS AND PROGRAMMABLE MEMORY CELLS
AU2002335692A AU2002335692A1 (en) 2001-08-29 2002-08-28 Manufacturing of non-volatile resistance variable devices and programmable memory cells
CN028170202A CN1550048B (en) 2001-08-29 2002-08-28 Non-volatile adjustable resistor device and programmable memory cell manufacture method
JP2003523032A JP4067490B2 (en) 2001-08-29 2002-08-28 Method for forming nonvolatile resistance variable device and method for forming programmable memory cell of memory circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/943,187 2001-08-29
US09/943,187 US6784018B2 (en) 2001-08-29 2001-08-29 Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry

Publications (2)

Publication Number Publication Date
WO2003019691A2 WO2003019691A2 (en) 2003-03-06
WO2003019691A3 true WO2003019691A3 (en) 2004-01-08

Family

ID=25479222

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/027929 WO2003019691A2 (en) 2001-08-29 2002-08-28 Manufacturing of non-volatile resistance variable devices and programmable memory cells

Country Status (9)

Country Link
US (3) US6784018B2 (en)
EP (1) EP1430548B1 (en)
JP (1) JP4067490B2 (en)
KR (1) KR100800254B1 (en)
CN (1) CN1550048B (en)
AT (1) ATE349076T1 (en)
AU (1) AU2002335692A1 (en)
DE (1) DE60216942T2 (en)
WO (1) WO2003019691A2 (en)

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