WO2003021692A3 - Mutliple layer phase-change memory - Google Patents
Mutliple layer phase-change memory Download PDFInfo
- Publication number
- WO2003021692A3 WO2003021692A3 PCT/US2002/026374 US0226374W WO03021692A3 WO 2003021692 A3 WO2003021692 A3 WO 2003021692A3 US 0226374 W US0226374 W US 0226374W WO 03021692 A3 WO03021692 A3 WO 03021692A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- change memory
- mutliple
- phase
- layer phase
- change
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012782 phase change material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10297115T DE10297115B4 (en) | 2001-08-31 | 2002-08-20 | Multi-layered phase change memory, in particular memory cell and method for the production |
KR1020047002915A KR100594849B1 (en) | 2001-08-31 | 2002-08-20 | Multiple layer phase-change memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/945,331 US6507061B1 (en) | 2001-08-31 | 2001-08-31 | Multiple layer phase-change memory |
US09/945,331 | 2001-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003021692A2 WO2003021692A2 (en) | 2003-03-13 |
WO2003021692A3 true WO2003021692A3 (en) | 2004-02-12 |
Family
ID=25482976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/026374 WO2003021692A2 (en) | 2001-08-31 | 2002-08-20 | Mutliple layer phase-change memory |
Country Status (6)
Country | Link |
---|---|
US (3) | US6507061B1 (en) |
KR (1) | KR100594849B1 (en) |
CN (1) | CN100470869C (en) |
DE (1) | DE10297115B4 (en) |
TW (1) | TW594989B (en) |
WO (1) | WO2003021692A2 (en) |
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- 2002-08-20 WO PCT/US2002/026374 patent/WO2003021692A2/en not_active Application Discontinuation
- 2002-08-20 CN CN02816937.9A patent/CN100470869C/en not_active Expired - Fee Related
- 2002-08-20 KR KR1020047002915A patent/KR100594849B1/en not_active IP Right Cessation
- 2002-08-21 TW TW091118922A patent/TW594989B/en not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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CN100470869C (en) | 2009-03-18 |
TW594989B (en) | 2004-06-21 |
US20030071289A1 (en) | 2003-04-17 |
US6507061B1 (en) | 2003-01-14 |
KR20040032975A (en) | 2004-04-17 |
KR100594849B1 (en) | 2006-06-30 |
US20030080427A1 (en) | 2003-05-01 |
US6998289B2 (en) | 2006-02-14 |
CN1568551A (en) | 2005-01-19 |
WO2003021692A2 (en) | 2003-03-13 |
DE10297115T5 (en) | 2004-09-02 |
DE10297115B4 (en) | 2009-04-09 |
US6674115B2 (en) | 2004-01-06 |
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