WO2003025244B1 - Refurbishing spent sputtering targets - Google Patents

Refurbishing spent sputtering targets

Info

Publication number
WO2003025244B1
WO2003025244B1 PCT/US2002/029246 US0229246W WO03025244B1 WO 2003025244 B1 WO2003025244 B1 WO 2003025244B1 US 0229246 W US0229246 W US 0229246W WO 03025244 B1 WO03025244 B1 WO 03025244B1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
sputter target
sputter
new
erosion groove
Prior art date
Application number
PCT/US2002/029246
Other languages
French (fr)
Other versions
WO2003025244A2 (en
WO2003025244A3 (en
Inventor
Michael Sandlin
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Priority to KR1020047003873A priority Critical patent/KR100617402B1/en
Priority to JP2003530013A priority patent/JP2005508444A/en
Priority to AU2002333640A priority patent/AU2002333640A1/en
Publication of WO2003025244A2 publication Critical patent/WO2003025244A2/en
Publication of WO2003025244A3 publication Critical patent/WO2003025244A3/en
Publication of WO2003025244B1 publication Critical patent/WO2003025244B1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F2007/068Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts repairing articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps

Abstract

Spent sputtering targets are refurbished by filling the depleted (2) region of the target (1) with new sputter material using a hot isostatic pressing or HIP'ing technique.

Claims

[received by the International Bureau on 12 Octo er 2004 ( 12 , 10.04 original claims 2, 5, and 10 amended original claim 1 cancelled; original claims 11 to 14 new, other claims 6-9 remain unchanged (2 pages)]
2. A refurbished sputter target comprising a support structure having an erosion groove, said erosion groove filled with new sputter material that is diffusion bonded to said support structure, wherein said support structure is a material selected from the group consisting of a CoCrPtB alloy, a NiAl alloy, a CoCr alloy, Al, and W.
3. A refurbished sputter target comprising a support structure having an erosion groove, said erosion groove filled with new sputter material that is diffusion bonded to said support structure, wherein said new sputter material contains platinum and a magnetic material.
4. A refurbished sputter target comprising a support structure having an erosion groove, said erosion groove filled with new sputter material that is diffusion bonded to said support structure.
5. A method of refurbishing a sputter target comprising the steps of:
(a) blending a powder of metal alloys to form a blend of metal alloy powders to produce a new sputter material,
(b) adding said metal alloy powders to a metal can to form a powdered layer,
(c) placing a spent sputter target having an erosion groove on said powdered layer,
(d) covering said spent sputter target with said metal alloy powders to form a second powdered layer,
(e) sealing said metal can, and
(f) subjecting said metal can to pressure and heat to consolidate and diffuse said metal alloy powders into and fill said erosion groove and form said new sputter material in said erosion groove.
6. The method of Claim 5, wherein said support structure is a material selected from the group consisting of a CoCrPtB alloy, Cu, stainless steel, a NiAl alloy, a CoCr alloy, Al W and Mo.
7. The method of Claim 5, wherein said new sputter material contains platinum and a magnetic material.
8. The method of Claim 5, wherein said new sputter target material contains a metal selected from a group consisting of Pt, Ru, Pd, Re, Rh, Au and Ag.
9. The method of Claim 5 wherein said method repeats steps (c) and (d) to add one or more additional spent metal targets to be refurbished.
10. The method of Claim 5, wherein said method further includes the steps of sawing and machining the product of step (f) to form a refurbished sputter target.
10 AMENDED SHEET ARTfCLE 19
11. A process for refurbishing a sputter target, comprising the steps of: blending a powder of metal alloys to form a blend of metal alloy powders to produce a new sputter material; adding said metal alloy powders to a metal can to form a powdered layer; placing at least a first spent sputter target having an erosion groove on the powdered layer; covering the first spent sputter target with the metal alloy powders to form an additional powdered layer; sealing the metal can; subjecting the metal can to pressure and heat to consolidate and diffuse the metal alloy powders into and fill the erosion groove, and form a solid metallic cylinder; and machining the solid metallic cylinder to form a refurbished sputter target.
12. A process for refurbishing a sputter target according to Claim 11, wherein the new sputter material contains platinum and a magnetic material.
13. A process for refurbishing a sputter target according to Claim 11, wherein the new sputter target material contains a metal selected from a group consisting of Pt, Ru, Pd, Re, Rh, Au and Ag.
14. A refurbished sputter target prepared by a process comprising the steps of: blending a powder of metal alloys to form a blend of metal alloy powders to produce a new sputter material; adding said metal alloy powders to a metal can to form a powdered layer; placing at least a first spent sputter target having an erosion groove on the powdered layer; covering the first spent sputter target with the metal alloy powders to form an additional powdered layer; sealing the metal can; subjecting the metal can to pressure and heat to consolidate and diffuse the metal alloy powders into and fill the erosion groove, and form a solid metallic cylinder; and machining the solid metallic cylinder to form a refurbished sputter target, wherein the first spent sputter target is comprised of a material selected from the group consisting of a CoCrPtB alloy, Cu, stainless steel, a NiAl alloy, a CoCr alloy, and Al W.
ORC 348230-1.050346.0088
11
PCT/US2002/029246 2001-09-17 2002-09-16 Refurbishing spent sputtering targets WO2003025244A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020047003873A KR100617402B1 (en) 2001-09-17 2002-09-16 Refurbishing spent sputtering targets
JP2003530013A JP2005508444A (en) 2001-09-17 2002-09-16 Recycling of used sputter targets
AU2002333640A AU2002333640A1 (en) 2001-09-17 2002-09-16 Refurbishing spent sputtering targets

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32242901P 2001-09-17 2001-09-17
US60/322,429 2001-09-17

Publications (3)

Publication Number Publication Date
WO2003025244A2 WO2003025244A2 (en) 2003-03-27
WO2003025244A3 WO2003025244A3 (en) 2004-10-14
WO2003025244B1 true WO2003025244B1 (en) 2004-12-29

Family

ID=23254840

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/029246 WO2003025244A2 (en) 2001-09-17 2002-09-16 Refurbishing spent sputtering targets

Country Status (6)

Country Link
US (1) US7175802B2 (en)
JP (1) JP2005508444A (en)
KR (1) KR100617402B1 (en)
CN (1) CN1608141A (en)
AU (1) AU2002333640A1 (en)
WO (1) WO2003025244A2 (en)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
CA2556786C (en) * 2003-02-24 2012-07-24 Tekna Plasma Systems Inc. Process and apparatus for the manufacture of sputtering targets
US7504008B2 (en) * 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
US20060021870A1 (en) * 2004-07-27 2006-02-02 Applied Materials, Inc. Profile detection and refurbishment of deposition targets
US20060081459A1 (en) * 2004-10-18 2006-04-20 Applied Materials, Inc. In-situ monitoring of target erosion
US8419911B2 (en) * 2005-01-28 2013-04-16 Panasonic Corporation Deposition method by physical vapor deposition and target for deposition processing by physical vapor deposition
AU2006243447B2 (en) * 2005-05-05 2010-11-18 H.C. Starck Surface Technology and Ceramic Powders GmbH Method for coating a substrate surface and coated product
MX2007013601A (en) * 2005-05-05 2008-03-18 Starck H C Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes.
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070116592A1 (en) * 2005-11-22 2007-05-24 Paul Tylus Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US8080930B2 (en) * 2006-09-07 2011-12-20 Michigan Technological University Self-regenerating nanotips for low-power electric propulsion (EP) cathodes
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
NZ576664A (en) * 2006-11-07 2012-03-30 Starck H C Gmbh Method for coating a substrate surface and coated product
KR100856758B1 (en) * 2006-11-30 2008-09-05 희성금속 주식회사 Manufacturing method of the iridium and ruthenium sputtering target having a fine grain size
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7871563B2 (en) * 2007-07-17 2011-01-18 Williams Advanced Materials, Inc. Process for the refurbishing of a sputtering target
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
JP2011517730A (en) * 2008-03-20 2011-06-16 エスシーアイ・エンジニアード・マテリアルズ,インコーポレイテッド Manufacturing method of target for sputtering composite and target manufactured by the manufacturing method
US20100178525A1 (en) * 2009-01-12 2010-07-15 Scott Campbell Method for making composite sputtering targets and the tartets made in accordance with the method
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
JP4348396B1 (en) 2008-12-26 2009-10-21 田中貴金属工業株式会社 Reproduction target manufacturing method
TWI397600B (en) * 2009-01-07 2013-06-01 Solar Applied Mat Tech Corp Recycled sputtering target and its making method
GB0905731D0 (en) 2009-04-03 2009-05-20 Eads Uk Ltd Hybrid component
CN101665916B (en) * 2009-09-29 2011-04-20 中国科学院上海微系统与信息技术研究所 Method for preparing sputtering target of phase-change material
CN102933741A (en) * 2010-06-16 2013-02-13 株式会社爱发科 Sputtering target and process for production thereof
CN103228815B (en) * 2010-11-30 2016-08-17 陶氏环球技术有限责任公司 Renovation is containing copper and the alloy sputtering targets of indium
JP2013001971A (en) * 2011-06-17 2013-01-07 Solar Applied Materials Technology Corp Reproduced sputtering target and manufacturing method therefor
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
CN103484851A (en) * 2012-06-13 2014-01-01 通用电气公司 Method for repairing metal components and gas turbine components
KR20150048538A (en) * 2013-10-28 2015-05-07 희성금속 주식회사 Preparation method of reuse gold targets for semiconductors
KR102332893B1 (en) * 2015-03-19 2021-12-01 엘티메탈 주식회사 Method for a variety metal bonding on precious metals sputtering target decrease raw materials and the sputtering target prepared thereby
KR102263238B1 (en) * 2015-03-20 2021-06-10 엘티메탈 주식회사 Sintered body for sputtering target, sputtering target comprising the same, and the preparation thereof
US11149343B2 (en) * 2015-05-28 2021-10-19 Materion Corporation Processes for refurbishing a spent sputtering target
CN105671501B (en) * 2016-04-11 2019-06-14 广州市尤特新材料有限公司 A kind of method that waste and old rotary target material is recycled, repairs and reprocessed
KR200486197Y1 (en) 2017-07-10 2018-04-12 이승노 Ladder for fruit tree cultivation
KR20210148458A (en) 2020-05-28 2021-12-08 삼성디스플레이 주식회사 Depositing device and depositing method using depositing device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933835A1 (en) * 1979-08-21 1981-03-26 Siemens AG, 1000 Berlin und 8000 München METHOD FOR FASTENING TARGET MATERIALS PRESENT IN DISK OR PLATE SHAPE ON COOLING PLATE FOR DUST-UP SYSTEMS
JPS62230967A (en) * 1986-03-31 1987-10-09 Mitsubishi Metal Corp Method for generating used target
JPS6393859A (en) 1986-10-09 1988-04-25 Toshiba Corp Sputtering target and its production
DE68924095T2 (en) * 1988-05-16 1996-04-04 Tosoh Corp Method for producing a sputtering target for producing an electrically conductive, transparent layer.
JPH0565635A (en) * 1991-03-11 1993-03-19 Mitsubishi Materials Corp Method for repairing magnetron sputtering noble-metal target
JPH05148631A (en) * 1991-10-31 1993-06-15 Mitsubishi Materials Corp Target for sputtering
US5428882A (en) * 1993-04-05 1995-07-04 The Regents Of The University Of California Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets
US5342496A (en) * 1993-05-18 1994-08-30 Tosoh Smd, Inc. Method of welding sputtering target/backing plate assemblies
JPH11286776A (en) * 1998-04-02 1999-10-19 Mitsubishi Materials Corp Sputtering target for forming magnet-optical recording medium
JP2000038661A (en) 1998-07-21 2000-02-08 Hitachi Metals Ltd Co ALLOY TARGET, ITS PRODUCTION, APPARATUS FOR SPUTTERING, MAGNETIC RECORDING FILM AND DEVICE FOR MAGNETIC RECORDING
JP4240679B2 (en) * 1999-09-21 2009-03-18 ソニー株式会社 Method for producing sputtering target
EP1362132B1 (en) * 2001-02-14 2006-05-10 H. C. Starck, Inc. Rejuvenation of a tantalum sputtering target.

Also Published As

Publication number Publication date
US20030077199A1 (en) 2003-04-24
KR100617402B1 (en) 2006-09-01
WO2003025244A2 (en) 2003-03-27
KR20040044935A (en) 2004-05-31
WO2003025244A3 (en) 2004-10-14
US7175802B2 (en) 2007-02-13
CN1608141A (en) 2005-04-20
JP2005508444A (en) 2005-03-31
AU2002333640A1 (en) 2003-04-01

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