WO2003028949A3 - Method of machining substrates - Google Patents
Method of machining substrates Download PDFInfo
- Publication number
- WO2003028949A3 WO2003028949A3 PCT/EP2002/011001 EP0211001W WO03028949A3 WO 2003028949 A3 WO2003028949 A3 WO 2003028949A3 EP 0211001 W EP0211001 W EP 0211001W WO 03028949 A3 WO03028949 A3 WO 03028949A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- formation
- predetermined depth
- wafers
- depth
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/490,985 US8048774B2 (en) | 2001-10-01 | 2002-10-01 | Methods and systems for laser machining a substrate |
DE60211728T DE60211728T2 (en) | 2001-10-01 | 2002-10-01 | METHOD AND DEVICE FOR PROCESSING SUBSTRATES |
EP02800144A EP1433195B1 (en) | 2001-10-01 | 2002-10-01 | Method and apparatus for machining substrates |
KR1020047004824A KR100913510B1 (en) | 2001-10-01 | 2002-10-01 | Machining substrates, particularly semiconductor wafers |
AU2002362491A AU2002362491A1 (en) | 2001-10-01 | 2002-10-01 | Method of machining substrates |
JP2003532249A JP2005504445A (en) | 2001-10-01 | 2002-10-01 | Processing of substrates, especially semiconductor wafers |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IES2001/0864 | 2001-10-01 | ||
IE20010864 | 2001-10-01 | ||
IE2002/0315 | 2002-04-26 | ||
IE2002/0315A IE83726B1 (en) | 2002-04-26 | Machining of semiconductor materials |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2003028949A2 WO2003028949A2 (en) | 2003-04-10 |
WO2003028949A3 true WO2003028949A3 (en) | 2004-04-01 |
WO2003028949A8 WO2003028949A8 (en) | 2004-08-19 |
Family
ID=34219649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/011001 WO2003028949A2 (en) | 2001-10-01 | 2002-10-01 | Method of machining substrates |
Country Status (9)
Country | Link |
---|---|
US (1) | US8048774B2 (en) |
EP (2) | EP1677346B1 (en) |
JP (2) | JP2005504445A (en) |
KR (1) | KR100913510B1 (en) |
CN (1) | CN100369235C (en) |
AT (2) | ATE327572T1 (en) |
AU (1) | AU2002362491A1 (en) |
DE (1) | DE60211728T2 (en) |
WO (1) | WO2003028949A2 (en) |
Families Citing this family (44)
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US7357486B2 (en) | 2001-12-20 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Method of laser machining a fluid slot |
US7776720B2 (en) * | 2002-04-19 | 2010-08-17 | Electro Scientific Industries, Inc. | Program-controlled dicing of a substrate using a pulsed laser |
JP4676711B2 (en) * | 2004-03-29 | 2011-04-27 | 日東電工株式会社 | Manufacturing method of laser processed product and laser processing adhesive sheet used therefor |
EP1634673A4 (en) | 2003-04-25 | 2009-04-08 | Nitto Denko Corp | Method of producing laser-processed product and adhesive sheet, for laser processing used therefor |
JP4601403B2 (en) * | 2004-11-25 | 2010-12-22 | パナソニック株式会社 | Semiconductor laser device manufacturing method and manufacturing apparatus therefor |
KR100689698B1 (en) | 2005-01-12 | 2007-03-08 | 주식회사 이오테크닉스 | Method for Processing an Object Having Passivation Layer |
JP4873863B2 (en) | 2005-01-14 | 2012-02-08 | 日東電工株式会社 | Manufacturing method of laser processed product and pressure-sensitive adhesive sheet for laser processing |
JP4854061B2 (en) | 2005-01-14 | 2012-01-11 | 日東電工株式会社 | Manufacturing method of laser processed product and protective sheet for laser processing |
US8030132B2 (en) * | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
JP4916680B2 (en) * | 2005-06-30 | 2012-04-18 | 株式会社半導体エネルギー研究所 | Manufacturing method and peeling method of semiconductor device |
JP4731244B2 (en) * | 2005-08-11 | 2011-07-20 | 株式会社ディスコ | Wafer division method |
US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
US8624157B2 (en) | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
JP5023614B2 (en) | 2006-08-24 | 2012-09-12 | パナソニック株式会社 | Semiconductor chip manufacturing method and semiconductor wafer processing method |
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JP2008235398A (en) * | 2007-03-19 | 2008-10-02 | Disco Abrasive Syst Ltd | Method of manufacturing device |
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EP2502067B1 (en) | 2009-11-18 | 2015-03-11 | Sensirion AG | Sensor mounted in flip-chip technology at a substrate edge |
US8791532B2 (en) | 2009-11-18 | 2014-07-29 | Sensirion Ag | Sensor mounted in flip-chip technology on a substrate |
US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US8283742B2 (en) * | 2010-08-31 | 2012-10-09 | Infineon Technologies, A.G. | Thin-wafer current sensors |
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KR101219386B1 (en) | 2011-02-16 | 2013-01-21 | 한국기계연구원 | Fabricating method of through silicon via and semiconductor chip manufactured by the same |
US8557683B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
US9029242B2 (en) | 2011-06-15 | 2015-05-12 | Applied Materials, Inc. | Damage isolation by shaped beam delivery in laser scribing process |
US20120322235A1 (en) * | 2011-06-15 | 2012-12-20 | Wei-Sheng Lei | Wafer dicing using hybrid galvanic laser scribing process with plasma etch |
US8703581B2 (en) | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
US8598016B2 (en) | 2011-06-15 | 2013-12-03 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
US8557682B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-layer mask for substrate dicing by laser and plasma etch |
US8759197B2 (en) | 2011-06-15 | 2014-06-24 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
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CN103495928B (en) * | 2013-10-09 | 2015-07-29 | 广东赛翡蓝宝石科技有限公司 | A kind of processing method improving Sapphire Substrate sheet surface quality and product yield |
JP6250429B2 (en) * | 2014-02-13 | 2017-12-20 | エスアイアイ・セミコンダクタ株式会社 | Semiconductor device and manufacturing method thereof |
US10043676B2 (en) * | 2015-10-15 | 2018-08-07 | Vishay General Semiconductor Llc | Local semiconductor wafer thinning |
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2002
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Also Published As
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KR20040051596A (en) | 2004-06-18 |
ATE327572T1 (en) | 2006-06-15 |
US20040259329A1 (en) | 2004-12-23 |
EP1433195A2 (en) | 2004-06-30 |
DE60211728D1 (en) | 2006-06-29 |
DE60211728T2 (en) | 2007-05-03 |
WO2003028949A8 (en) | 2004-08-19 |
JP2005504445A (en) | 2005-02-10 |
EP1677346A2 (en) | 2006-07-05 |
WO2003028949A2 (en) | 2003-04-10 |
CN1620713A (en) | 2005-05-25 |
AU2002362491A8 (en) | 2005-10-27 |
CN100369235C (en) | 2008-02-13 |
KR100913510B1 (en) | 2009-08-21 |
EP1433195B1 (en) | 2006-05-24 |
AU2002362491A1 (en) | 2003-04-14 |
US8048774B2 (en) | 2011-11-01 |
JP2010016392A (en) | 2010-01-21 |
EP1677346A3 (en) | 2008-07-09 |
EP1677346B1 (en) | 2011-12-14 |
ATE537558T1 (en) | 2011-12-15 |
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