WO2003036731A1 - Light emitting or light receiving semiconductor module and method for manufacturing the same - Google Patents

Light emitting or light receiving semiconductor module and method for manufacturing the same Download PDF

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Publication number
WO2003036731A1
WO2003036731A1 PCT/JP2001/009234 JP0109234W WO03036731A1 WO 2003036731 A1 WO2003036731 A1 WO 2003036731A1 JP 0109234 W JP0109234 W JP 0109234W WO 03036731 A1 WO03036731 A1 WO 03036731A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
manufacturing
same
semiconductor module
spherical solar
Prior art date
Application number
PCT/JP2001/009234
Other languages
English (en)
French (fr)
Inventor
Josuke Nakata
Original Assignee
Josuke Nakata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Josuke Nakata filed Critical Josuke Nakata
Priority to KR1020037005224A priority Critical patent/KR100619614B1/ko
Priority to EP01976788A priority patent/EP1445804A4/en
Priority to PCT/JP2001/009234 priority patent/WO2003036731A1/ja
Priority to CNB018202713A priority patent/CN1220277C/zh
Priority to US10/492,561 priority patent/US7602035B2/en
Priority to JP2003539112A priority patent/JP3904559B2/ja
Priority to CA2463981A priority patent/CA2463981C/en
Priority to AU2001295987A priority patent/AU2001295987B2/en
Priority to TW090126553A priority patent/TW512542B/zh
Publication of WO2003036731A1 publication Critical patent/WO2003036731A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H02S40/22—Light-reflecting or light-concentrating means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1017—Shape being a sphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
PCT/JP2001/009234 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same WO2003036731A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1020037005224A KR100619614B1 (ko) 2001-10-19 2001-10-19 발광 또는 수광용 반도체 모듈 및 그 제조 방법
EP01976788A EP1445804A4 (en) 2001-10-19 2001-10-19 LIGHT EMISSION OR LIGHT RECEPTACLE SEMICONDUCTOR MODULE AND METHOD FOR THE PRODUCTION THEREOF
PCT/JP2001/009234 WO2003036731A1 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same
CNB018202713A CN1220277C (zh) 2001-10-19 2001-10-19 发光或感光半导体组件及其制造方法
US10/492,561 US7602035B2 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing same
JP2003539112A JP3904559B2 (ja) 2001-10-19 2001-10-19 発光又は受光用半導体モジュールおよびその製造方法
CA2463981A CA2463981C (en) 2001-10-19 2001-10-19 Light-emitting or light-receiving semiconductor module, and method for manufacturing the same
AU2001295987A AU2001295987B2 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same
TW090126553A TW512542B (en) 2001-10-19 2001-10-26 Semiconductor module for light emitting or light receiving, and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/009234 WO2003036731A1 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2003036731A1 true WO2003036731A1 (en) 2003-05-01

Family

ID=11737855

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/009234 WO2003036731A1 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same

Country Status (9)

Country Link
US (1) US7602035B2 (ja)
EP (1) EP1445804A4 (ja)
JP (1) JP3904559B2 (ja)
KR (1) KR100619614B1 (ja)
CN (1) CN1220277C (ja)
AU (1) AU2001295987B2 (ja)
CA (1) CA2463981C (ja)
TW (1) TW512542B (ja)
WO (1) WO2003036731A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1496381A2 (en) * 2003-07-01 2005-01-12 Matsushita Electric Industrial Co., Ltd. Mount assembly, optical transmission line and photoelectric circuit board
JP2005057073A (ja) * 2003-08-05 2005-03-03 Nichia Chem Ind Ltd 発光装置及びその製造方法
EP1553638A1 (en) * 2002-06-21 2005-07-13 Josuke Nakata Light receiving or light emitting device and its production method
US7214557B2 (en) 2003-10-24 2007-05-08 Kyosemi Corporation Light receiving or light emitting modular sheet and process for producing the same
WO2007080631A1 (ja) * 2006-01-11 2007-07-19 Kyosemi Corporation 受光又は発光用半導体モジュール
WO2007144944A1 (ja) * 2006-06-14 2007-12-21 Kyosemi Corporation ロッド形半導体デバイス
WO2008004277A1 (en) * 2006-07-04 2008-01-10 Kyosemi Corporation Panel-shaped semiconductor module
WO2008004304A1 (en) * 2006-07-07 2008-01-10 Kyosemi Corporation Panel-shaped semiconductor module
WO2008018116A1 (en) 2006-08-07 2008-02-14 Kyosemi Corporation Semiconductor module for power generation or light emission
EP1901419A2 (en) 2003-06-09 2008-03-19 Kyosemi Corporation Generator system
WO2008059593A1 (fr) 2006-11-17 2008-05-22 Kyosemi Corporation Dispositif de cellule solaire superposée
US20080198584A1 (en) * 2005-05-17 2008-08-21 Nervecorp Limited Building Structures Having Electrically Functional Architectural Surfaces
JP2008270084A (ja) * 2007-04-24 2008-11-06 Sankyo Denki:Kk 照明装置
WO2010016099A1 (ja) * 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
WO2010016098A1 (ja) 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
WO2010070714A1 (ja) * 2008-12-19 2010-06-24 京セミ株式会社 太陽電池モジュール及びその製造方法
JP2011096987A (ja) * 2009-11-02 2011-05-12 Taisei Komu Kk 太陽光発電パネルの診断装置、遮音壁、建造物用の窓ガラス及び乗物用の窓ガラス
US7947894B2 (en) 2006-02-06 2011-05-24 Kyosemi Corporation Light receiving or light emitting semiconductor module
US8154031B2 (en) * 2005-02-28 2012-04-10 Osram Opto Semiconductors Gmbh Module comprising radiation-emitting semiconductor bodies

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WO2003017382A1 (fr) * 2001-08-13 2003-02-27 Josuke Nakata Module a semi-conducteur emetteur de lumiere ou recepteur de lumiere et procede de fabrication correspondant
CN1470080A (zh) * 2001-08-13 2004-01-21 中田仗v 半导体器件及其制造方法
CA2463981C (en) 2001-10-19 2011-11-29 Josuke Nakata Light-emitting or light-receiving semiconductor module, and method for manufacturing the same
CN100426530C (zh) * 2002-05-02 2008-10-15 中田仗祐 受光或发光用面板及其制造方法
US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
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US8350146B2 (en) * 2005-03-01 2013-01-08 Georgia Tech Research Corporation Three dimensional multi-junction photovoltaic device
JP5171001B2 (ja) * 2005-09-30 2013-03-27 三洋電機株式会社 太陽電池モジュールの製造方法、太陽電池セルおよび太陽電池モジュール
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US8607510B2 (en) * 2006-10-25 2013-12-17 Gregory S. Daniels Form-fitting solar panel for roofs and roof vents
ES2536919T3 (es) 2007-01-18 2015-05-29 Polytron Technologies, Inc. Estructura plana de un aparato de iluminación con diodos emisores de luz
US8456393B2 (en) * 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US20090078303A1 (en) * 2007-09-24 2009-03-26 Solyndra, Inc. Encapsulated Photovoltaic Device Used With A Reflector And A Method of Use for the Same
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US20100018567A1 (en) * 2008-07-28 2010-01-28 Toshihiko Sakurai Solar power generating system employing a solar battery
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JP2010287795A (ja) * 2009-06-12 2010-12-24 Sharp Corp 太陽電池モジュールおよびこれを搭載した電子部品、電気部品、電子機器
CN101854133A (zh) * 2010-03-29 2010-10-06 罗宇浩 交流光伏模块以及使用该交流光伏模块的建筑幕墙单元
CN101950772B (zh) * 2010-08-05 2013-01-23 中山大学 一种具有旁路二极管的晶体硅太阳电池的制备方法
US9455307B2 (en) * 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
CN103165694B (zh) * 2011-12-09 2016-11-23 聚日（苏州）科技有限公司 一种太阳能电池组件及其制造方法
CN103187453B (zh) * 2011-12-29 2016-04-13 清华大学 太阳能电池
CN103187456B (zh) * 2011-12-29 2015-08-26 清华大学 太阳能电池
US9525097B2 (en) * 2013-03-15 2016-12-20 Nthdegree Technologies Worldwide Inc. Photovoltaic module having printed PV cells connected in series by printed conductors
FR3003931B1 (fr) * 2013-04-02 2017-09-01 Fd Eclairage Arch Module led pour luminaire
JP2015029077A (ja) * 2013-07-04 2015-02-12 信越化学工業株式会社 太陽電池モジュールの製造方法
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CN115911219B (zh) * 2023-01-06 2023-05-26 惠科股份有限公司 球形发光芯片及其制备方法、显示装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028546A (en) * 1989-07-31 1991-07-02 Texas Instruments Incorporated Method for manufacture of solar cell with foil contact point
US5431127A (en) * 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
WO1996003775A1 (en) * 1994-07-22 1996-02-08 Ontario Hydro Method and apparatus for affixing spheres to a foil matrix
JPH09162434A (ja) * 1995-12-05 1997-06-20 Hitachi Ltd 太陽電池およびその製造方法
WO1998015983A1 (en) * 1996-10-09 1998-04-16 Josuke Nakata Semiconductor device
JP2000022184A (ja) * 1998-07-03 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 球状または棒状結晶太陽電池およびその製造方法
JP2001102618A (ja) * 1999-09-30 2001-04-13 Sony Corp 受光装置
JP2001156315A (ja) * 1999-11-26 2001-06-08 Mitsui High Tec Inc 太陽電池を含む球状半導体及びそれを用いた球状半導体装置
JP2001168369A (ja) * 1999-12-09 2001-06-22 Joyu Nakada 球状半導体素子を用いた発電装置および球状半導体素子を用いた発光装置
JP2001267609A (ja) * 2000-03-23 2001-09-28 Mitsui High Tec Inc 太陽電池の製造方法及び太陽電池

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3040416A (en) * 1959-05-13 1962-06-26 Hoffman Electronics Corp Method of making a large area solar cell panel
US3038952A (en) * 1959-05-20 1962-06-12 Hoffman Electronics Corp Method of making a solar cell panel
US3350775A (en) * 1963-10-03 1967-11-07 Hoffman Electronics Corp Process of making solar cells or the like
US3433676A (en) * 1964-10-21 1969-03-18 Gen Motors Corp Thermophotovoltaic energy convertor with photocell mount
DE1539564A1 (de) 1966-11-09 1969-12-11 Siemens Ag Lumineszenzdiode mit hohem Wirkungsgrad
FR1593348A (ja) * 1967-12-07 1970-05-25
US3630627A (en) * 1970-02-27 1971-12-28 Nasa Solar cell assembly test method
US3998659A (en) * 1974-01-28 1976-12-21 Texas Instruments Incorporated Solar cell with semiconductor particles and method of fabrication
JPS5328751B2 (ja) * 1974-11-27 1978-08-16
US3999283A (en) * 1975-06-11 1976-12-28 Rca Corporation Method of fabricating a photovoltaic device
US4021323A (en) * 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
US4126812A (en) * 1976-12-20 1978-11-21 Texas Instruments Incorporated Spherical light emitting diode element and character display with integral reflector
US4334354A (en) * 1977-07-12 1982-06-15 Trw Inc. Method of fabricating a solar array
US4407320A (en) * 1981-09-08 1983-10-04 Texas Instruments Incorporated Large area, fault tolerant solar energy converter
US4513167A (en) * 1982-04-27 1985-04-23 The Australian National University Arrays of polarized energy-generating elements
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
FR2548563B1 (fr) * 1983-07-06 1985-11-22 Stein Industrie Ensemble forme par l'assemblage de tubes en acier inoxydable ferritique sur une plaque tubulaire en acier au carbone, et procede de fabrication dudit ensemble
US4582588A (en) * 1984-09-04 1986-04-15 Texas Instruments Incorporated Method of anodizing and sealing aluminum
US4691076A (en) * 1984-09-04 1987-09-01 Texas Instruments Incorporated Solar array with aluminum foil matrix
US4581103A (en) * 1984-09-04 1986-04-08 Texas Instruments Incorporated Method of etching semiconductor material
JPH0754855B2 (ja) 1984-09-04 1995-06-07 テキサス インスツルメンツ インコーポレイテッド ソーラー・アレーの製造方法
US4638110A (en) * 1985-06-13 1987-01-20 Illuminated Data, Inc. Methods and apparatus relating to photovoltaic semiconductor devices
US4832755A (en) * 1987-08-11 1989-05-23 The Boeing Company Glass encapsulation of solar cell arrays to minimize voltage/plasma interaction effects in a space environment
JPH01179374A (ja) 1988-01-05 1989-07-17 Res Dev Corp Of Japan 接合型半導体発光素子
JPH0536997A (ja) 1991-07-26 1993-02-12 Sanyo Electric Co Ltd 光起電力装置
EP0616727B1 (en) * 1991-12-09 2003-02-26 Pacific Solar Pty Ltd Buried contact, interconnected thin film and bulk photovoltaic cells
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
US5419782A (en) * 1993-05-11 1995-05-30 Texas Instruments Incorporated Array of solar cells having an optically self-aligning, output-increasing, ambient-protecting coating
US5538902A (en) * 1993-06-29 1996-07-23 Sanyo Electric Co., Ltd. Method of fabricating a photovoltaic device having a three-dimensional shape
US5469020A (en) * 1994-03-14 1995-11-21 Massachusetts Institute Of Technology Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes
JPH08199513A (ja) 1995-01-27 1996-08-06 Furetsudo:Kk 発光標識装置
JPH0949213A (ja) 1995-08-08 1997-02-18 S T Energ Kk 路面設置型道路信号装置
JP3231244B2 (ja) 1996-07-22 2001-11-19 仗祐 中田 無機材料製の球状体の製造方法及びその製造装置
KR100377825B1 (ko) * 1996-10-09 2003-07-16 나가다 죠스게 반도체디바이스
US5925897A (en) 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same
WO1999010935A1 (en) 1997-08-27 1999-03-04 Josuke Nakata Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
WO1999038215A1 (fr) 1998-01-23 1999-07-29 Josuke Nakata Module de batterie solaire pour dispositif d'electrolyse optique et dispositif d'electrolyse optique
JPH11238897A (ja) * 1998-02-23 1999-08-31 Canon Inc 太陽電池モジュール製造方法および太陽電池モジュール
JP2000259992A (ja) 1999-03-12 2000-09-22 Sekisui Jushi Co Ltd メンテナンス表示システム
JP4510961B2 (ja) 1999-10-19 2010-07-28 Ｏｋｉセミコンダクタ株式会社 光モジュール
KR100336779B1 (ko) 1999-12-08 2002-05-16 박종섭 반도체 소자의 게이트 절연막 형성방법
JP2001177132A (ja) 1999-12-16 2001-06-29 Mitsui High Tec Inc 球体の切断方法、これを用いた太陽電池およびその製造方法
JP3369525B2 (ja) 2000-01-27 2003-01-20 株式会社三井ハイテック 太陽電池及びその製造方法
US6355873B1 (en) * 2000-06-21 2002-03-12 Ball Semiconductor, Inc. Spherical shaped solar cell fabrication and panel assembly
JP3939082B2 (ja) 2000-08-03 2007-06-27 株式会社三井ハイテック 太陽電池の製造方法
EP1255303B1 (en) 2000-10-20 2016-06-29 Sphelar Power Corporation Light-emitting or light-detecting semiconductor module and method of manufacture thereof
JP3938908B2 (ja) * 2000-10-20 2007-06-27 仗祐 中田 発光又は受光用半導体デバイス及びその製造方法
JP3490969B2 (ja) 2000-11-24 2004-01-26 圭弘 浜川 光発電装置
CN1470080A (zh) * 2001-08-13 2004-01-21 中田仗v 半导体器件及其制造方法
WO2003017382A1 (fr) * 2001-08-13 2003-02-27 Josuke Nakata Module a semi-conducteur emetteur de lumiere ou recepteur de lumiere et procede de fabrication correspondant
CA2463981C (en) 2001-10-19 2011-11-29 Josuke Nakata Light-emitting or light-receiving semiconductor module, and method for manufacturing the same
DE60132722T2 (de) * 2001-12-25 2009-01-29 Josuke Nakata Lichtempfindliche oder lichtemittierende Vorrichtung
CN100426530C (zh) * 2002-05-02 2008-10-15 中田仗祐 受光或发光用面板及其制造方法
US7144830B2 (en) * 2002-05-10 2006-12-05 Sarnoff Corporation Plural layer woven electronic textile, article and method
US7592276B2 (en) * 2002-05-10 2009-09-22 Sarnoff Corporation Woven electronic textile, yarn and article
CN100380685C (zh) * 2002-06-21 2008-04-09 中田仗祐 光电或发光用器件及其制造方法
US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
CA2537777C (en) * 2003-10-24 2011-08-02 Kyosemi Corporation Light receiving or emitting modular sheet and production method thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028546A (en) * 1989-07-31 1991-07-02 Texas Instruments Incorporated Method for manufacture of solar cell with foil contact point
WO1996003775A1 (en) * 1994-07-22 1996-02-08 Ontario Hydro Method and apparatus for affixing spheres to a foil matrix
US5431127A (en) * 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
JPH09162434A (ja) * 1995-12-05 1997-06-20 Hitachi Ltd 太陽電池およびその製造方法
WO1998015983A1 (en) * 1996-10-09 1998-04-16 Josuke Nakata Semiconductor device
JP2000022184A (ja) * 1998-07-03 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 球状または棒状結晶太陽電池およびその製造方法
JP2001102618A (ja) * 1999-09-30 2001-04-13 Sony Corp 受光装置
JP2001156315A (ja) * 1999-11-26 2001-06-08 Mitsui High Tec Inc 太陽電池を含む球状半導体及びそれを用いた球状半導体装置
JP2001168369A (ja) * 1999-12-09 2001-06-22 Joyu Nakada 球状半導体素子を用いた発電装置および球状半導体素子を用いた発光装置
JP2001267609A (ja) * 2000-03-23 2001-09-28 Mitsui High Tec Inc 太陽電池の製造方法及び太陽電池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1445804A4 *

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US7378757B2 (en) 2003-06-09 2008-05-27 Kyosemi Corporation Power generation system
EP1901419A2 (en) 2003-06-09 2008-03-19 Kyosemi Corporation Generator system
EP1496381A3 (en) * 2003-07-01 2008-02-06 Matsushita Electric Industrial Co., Ltd. Mount assembly, optical transmission line and photoelectric circuit board
EP1496381A2 (en) * 2003-07-01 2005-01-12 Matsushita Electric Industrial Co., Ltd. Mount assembly, optical transmission line and photoelectric circuit board
JP2005057073A (ja) * 2003-08-05 2005-03-03 Nichia Chem Ind Ltd 発光装置及びその製造方法
US7214557B2 (en) 2003-10-24 2007-05-08 Kyosemi Corporation Light receiving or light emitting modular sheet and process for producing the same
US8154031B2 (en) * 2005-02-28 2012-04-10 Osram Opto Semiconductors Gmbh Module comprising radiation-emitting semiconductor bodies
US20080198584A1 (en) * 2005-05-17 2008-08-21 Nervecorp Limited Building Structures Having Electrically Functional Architectural Surfaces
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US8030569B2 (en) 2006-01-11 2011-10-04 Kyosemi Corporation Light receiving or light emitting semiconductor module
JP4948423B2 (ja) * 2006-01-11 2012-06-06 京セミ株式会社 受光又は発光用半導体モジュール
WO2007080631A1 (ja) * 2006-01-11 2007-07-19 Kyosemi Corporation 受光又は発光用半導体モジュール
KR101135507B1 (ko) * 2006-01-11 2012-04-13 교세미 가부시키가이샤 수광 또는 발광용 반도체 모듈
US7947894B2 (en) 2006-02-06 2011-05-24 Kyosemi Corporation Light receiving or light emitting semiconductor module
WO2007144944A1 (ja) * 2006-06-14 2007-12-21 Kyosemi Corporation ロッド形半導体デバイス
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US8053788B2 (en) 2006-06-14 2011-11-08 Kyosemi Corporation Rod-shaped semiconductor device
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CA2463981C (en) 2011-11-29

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