WO2003038873A3 - Removing an amorphous oxide from a monocrystalline surface - Google Patents

Removing an amorphous oxide from a monocrystalline surface Download PDF

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Publication number
WO2003038873A3
WO2003038873A3 PCT/US2002/032344 US0232344W WO03038873A3 WO 2003038873 A3 WO2003038873 A3 WO 2003038873A3 US 0232344 W US0232344 W US 0232344W WO 03038873 A3 WO03038873 A3 WO 03038873A3
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WO
WIPO (PCT)
Prior art keywords
amorphous oxide
monocrystalline surface
monocrystalline substrate
monocrystalline
liberated
Prior art date
Application number
PCT/US2002/032344
Other languages
French (fr)
Other versions
WO2003038873A2 (en
Inventor
John L Edwards Jr
Yi Wei
Dirk C Jordan
Xiaoming Hu
James Bradley Craigo
Ravindranath Droopad
Zhiyi Yu
Alexander A Demkov
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2002356551A priority Critical patent/AU2002356551A1/en
Priority to EP02802442A priority patent/EP1451857A2/en
Priority to JP2003541031A priority patent/JP2005533364A/en
Publication of WO2003038873A2 publication Critical patent/WO2003038873A2/en
Publication of WO2003038873A3 publication Critical patent/WO2003038873A3/en

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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Abstract

A method of removing an amorphous oxide (24) from a surface of a monocrystalline substrate (22) is provided. The method includes depositing a passivation material (26) overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.
PCT/US2002/032344 2001-10-26 2002-10-10 Removing an amorphous oxide from a monocrystalline surface WO2003038873A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002356551A AU2002356551A1 (en) 2001-10-26 2002-10-10 Removing an amorphous oxide from a monocrystalline surface
EP02802442A EP1451857A2 (en) 2001-10-26 2002-10-10 Removing an amorphous oxide from a monocrystalline surface
JP2003541031A JP2005533364A (en) 2001-10-26 2002-10-10 Removal of amorphous oxides from single crystal surfaces.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/983,854 US6693033B2 (en) 2000-02-10 2001-10-26 Method of removing an amorphous oxide from a monocrystalline surface
US09/983,854 2001-10-26

Publications (2)

Publication Number Publication Date
WO2003038873A2 WO2003038873A2 (en) 2003-05-08
WO2003038873A3 true WO2003038873A3 (en) 2003-11-13

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PCT/US2002/032344 WO2003038873A2 (en) 2001-10-26 2002-10-10 Removing an amorphous oxide from a monocrystalline surface

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US (1) US6693033B2 (en)
EP (1) EP1451857A2 (en)
JP (1) JP2005533364A (en)
KR (1) KR20050035170A (en)
CN (1) CN1695225A (en)
AU (1) AU2002356551A1 (en)
WO (1) WO2003038873A2 (en)

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US7230214B2 (en) * 2004-03-03 2007-06-12 Tutco, Inc. Metal sheathed heater using splice connection assembly with heat shrinkable tubing, and method of use
KR102005736B1 (en) 2009-10-16 2019-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
KR101377170B1 (en) * 2013-02-13 2014-03-27 포항공과대학교 산학협력단 Method of removing silicon oxide layer and laminated structure
JP6346124B2 (en) * 2015-06-02 2018-06-20 東芝メモリ株式会社 Manufacturing method of semiconductor device

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