WO2003041120A2 - Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method - Google Patents
Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method Download PDFInfo
- Publication number
- WO2003041120A2 WO2003041120A2 PCT/FR2002/003766 FR0203766W WO03041120A2 WO 2003041120 A2 WO2003041120 A2 WO 2003041120A2 FR 0203766 W FR0203766 W FR 0203766W WO 03041120 A2 WO03041120 A2 WO 03041120A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photodetector
- electrodes
- surface layer
- etching
- semiconductor material
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000002344 surface layer Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 description 15
- 239000010410 layer Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910017214 AsGa Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005021 gait Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Definitions
- the present invention relates to a method for manufacturing a semiconductor photodetector as well as to a photodetector obtained by this method.
- the invention applies in particular to the detection of low-energy UV rays and X-rays and therefore more particularly relates to a method for manufacturing a low-energy UV and X semiconductor photodetector as well as a photodetector. obtained by this process.
- This range typically ranges from 3eV to 5keV.
- Photodetectors based on semiconductor materials are based on the collection of charges (electron-hole pairs) generated by the interaction of ionizing radiation with matter.
- photodetector 2 comprising an element 4 of semiconductor material comprised between two terminals, or electrodes 6 and 8.
- the ionizing radiation 10 which passes through the photodetector, transfers all or part of its energy to the material.
- the absorbed energy leads to the generation of electrical charges 12 (electron-hole pairs). These charges are driven by the internal electric field 14 which is established when the photodetector is polarized by a voltage source 16.
- the charges (electrons and holes), which move between the terminals of the photedector, produce an electrical signal which is recorded by appropriate electronic means 18.
- the response time of a photodetector depends on the lifetime of the carriers (electrons and holes) in the volume of material in which the charges move before recombining.
- the lifetime of the carriers in the material zone, in which the charges move must be of the same order of magnitude (approximately lOOps ).
- the radiation In the low energy UV and X range, the radiation is very weakly penetrating and the charges are generated in a surface layer of the photodetector.
- This surface layer has a thickness of between 1 nm and 100 nm, that is to say of the order of a few atomic layers to a few tens of atomic layers, the thickness of an atomic layer being of the order of 0.2 nm.
- photodetectors In this low-energy UV-X range, photodetectors are usually used whose electrodes are coplanar and which are formed on substrates whose thickness is of the order of a hundred micrometers in order to have good mechanical resistance of these photodetectors. .
- the thickness of the active area In the case of a coplanar photodetector, in the low-energy UV and X range, the thickness of the active area, that is to say of the area of material useful for detection, which corresponds to the depth of penetration of the radiation to be detected is very low (from 1 nm to 100 nm).
- the response of the photodetector strongly depends on the electrical properties of this area of surface material.
- the properties of the surface material zone of the substrate strongly depend on the diffusion of unwanted impurities and on the formation of crystallographic defects induced during the stages of manufacture of the photodetector. A small amount of impurities or crystallographic defects can significantly modify the lifetime of the carriers in the area of surface material useful for detection.
- the reproducibility is all the more difficult to obtain as the response times are short, in particular for response times of less than ten nanoseconds.
- the temporal characteristics of the photodetectors are all the more sensitive to the properties of the surface area the smaller the inter-electrode distance.
- a means of producing photodetectors whose response time is less than that of the initial semiconductor consists in pre-irradiating the photodetectors with neutrons, electrons or protons before their use. Irradiation causes point defects
- the photodetectors must have a response time fixed by the starting material and the manufacturing process possibly including pre-irradiation.
- the target response time is typically between lOps and 10ns.
- the present invention aims to solve these problems. It relates to a method for manufacturing, in a reproducible manner, photodetectors of semiconductor material, the active surface of which has characteristics equivalent to those of the volume of the semiconductor material, as well as the photodetectors obtained by this process.
- the present invention aims to manufacture a photodetector without being concerned with changes in the properties of the surface layer of the semiconductor material of the photodetector. These modifications are induced by the manufacturing process of the photodetector and are difficult to control.
- the invention then aims to have a technique for exposing a surface area of the semiconductor material, this area having the electrical characteristics of the volume of this semiconductor material.
- the subject of the present invention is a method of manufacturing a semiconductor photodetector, in which a photodetection element is made of photodetector semiconductor material, this element being provided with electrodes, this method being characterized in that, after manufacturing the photodetection element and without damaging the electrodes, a surface layer of the photodetector semiconductor material is removed, over a thickness at least equal to 5 nm, to create a new surface layer having the electrical properties of the volume of the photodetector semiconductor material.
- document US Pat. No. 4,581,099A discloses a process for preparing a photosensor, in which a photoconductive layer, an n + semiconductor layer, is successively formed. and electrodes on a glass substrate. The n + semiconductor layer is then removed at the inter-electrode spaces.
- this n + semiconductor layer is an ohmic contact layer 5 which only serves to obtain good ohmic contact between the electrodes and the photoconductive layer. It is not part of the active area of the photosensor, an area which is formed by the photoconductive layer and with which the
- this ohmic contact layer is removed before the heat treatment of the photosensor and therefore before the end of the manufacture thereof.
- the photodetection element comprises a pre-irradiation of the photodetector semiconductor material and the surface layer is removed after this pre-irradiation.
- the electrodes are coplanar and the surface layer is removed between these coplanar electrodes.
- the electrodes can be interdigged.
- an etching of the photodetector semiconductor material is carried out to remove the surface layer.
- This etching can be a chemical etching capable of not dissolving the electrodes.
- Etching can be carried out using a solution composed of 5 volumes of sulfuric acid, 1 volume of hydrogen peroxide and 1 volume of water.
- a protective resin can be applied to the electrodes before etching.
- the photodetector is designed to detect ultraviolet radiation or low energy X-rays.
- the invention also relates to a photodetector obtained by the process which is the subject of the invention, the photodetection element comprising a difference in level around each electrode.
- FIG. 1 is a schematic view of a known semiconductor photodetector and has already been described
- FIG. 2 is a schematic top view of a photodetector according to the invention during manufacture
- - Figure 3 is a schematic sectional view of a photodetector obtained by a method according to one invention.
- one begins by manufacturing a photodetector with coplanar electrodes, comprising an element made of photodetector semiconductor material, provided with coplanar electrodes forming electrical contacts.
- an etching step is provided which does not alter the electrical contacts and which exposes a surface area of the material, this surface area having the electrical characteristics of the volume of the material.
- This etching makes it possible to remove the surface layer or zone having modified properties and located between the electrical contacts.
- m 'anointest equal to 5 nm and typically between 5 nm and 100 nm. Larger thicknesses can be removed by etching, but this is neither necessary nor detrimental to the photodetector.
- a process according to the invention is described which allows. the manufacture of a photodetector with coplanar and interdigitated electrodes with a difference of 500 ⁇ m between electrodes.
- This photodetector is intended to be used for the measurement of ultraviolet pulses or low energy X pulses, whose wavelength is for example 355 nm and which have widths at mid-height of the order of a few tens from picoseconds to ten nanoseconds.
- Figure 2 is a schematic top view of this photodetector 20 during manufacture.
- This photodetector comprises an element 22 made of photodetector semiconductor material (for example a photodetector crystalline semiconductor such as crystalline silicon) as well as two interdigitated coplanar electrodes 24 and 26, formed on a flat face of the element 22.
- the manufacture of this photodetector includes a cutting step, followed by chemical cleaning
- an acid solution is used, the composition of which can be adapted to the material to be etched.
- AsGa a mixture of sulfuric acid, hydrogen peroxide and water is used, preferably in the following proportions:
- a protective resin could be applied to the electrodes before etching.
- Figure 3 is a schematic sectional view of the photodetector after etching.
- the dotted line shows the level of the material before it.
- the reference E corresponds to the thickness of the surface layer removed by etching.
- That of the photodetector I (respectively II) was 2.5 (respectively 5) times smaller after the etching treatment according to the invention, and this in a reproducible manner.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002465882A CA2465882A1 (en) | 2001-11-06 | 2002-11-04 | Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method |
EP02796835A EP1466349A2 (en) | 2001-11-06 | 2002-11-04 | Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0114326A FR2831992B1 (en) | 2001-11-06 | 2001-11-06 | METHOD FOR MANUFACTURING A SEMICONDUCTOR PHOTODETECTOR, ESPECIALLY IN THE LOW ENERGY UV-X DOMAIN, AND PHODETECTOR OBTAINED BY THIS METHOD |
FR01/14326 | 2001-11-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003041120A2 true WO2003041120A2 (en) | 2003-05-15 |
WO2003041120A3 WO2003041120A3 (en) | 2003-11-27 |
Family
ID=8869100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2002/003766 WO2003041120A2 (en) | 2001-11-06 | 2002-11-04 | Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1466349A2 (en) |
CA (1) | CA2465882A1 (en) |
FR (1) | FR2831992B1 (en) |
WO (1) | WO2003041120A2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581099A (en) * | 1985-01-30 | 1986-04-08 | Canon Kabushiki Kaisha | Method for preparation of a photosensor |
US5404007A (en) * | 1992-05-29 | 1995-04-04 | The United States Of America As Represented By The Secretary Of The Air Force | Radiation resistant RLG detector systems |
US5780916A (en) * | 1995-10-10 | 1998-07-14 | University Of Delaware | Asymmetric contacted metal-semiconductor-metal photodetectors |
-
2001
- 2001-11-06 FR FR0114326A patent/FR2831992B1/en not_active Expired - Fee Related
-
2002
- 2002-11-04 WO PCT/FR2002/003766 patent/WO2003041120A2/en not_active Application Discontinuation
- 2002-11-04 EP EP02796835A patent/EP1466349A2/en not_active Withdrawn
- 2002-11-04 CA CA002465882A patent/CA2465882A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581099A (en) * | 1985-01-30 | 1986-04-08 | Canon Kabushiki Kaisha | Method for preparation of a photosensor |
US5404007A (en) * | 1992-05-29 | 1995-04-04 | The United States Of America As Represented By The Secretary Of The Air Force | Radiation resistant RLG detector systems |
US5780916A (en) * | 1995-10-10 | 1998-07-14 | University Of Delaware | Asymmetric contacted metal-semiconductor-metal photodetectors |
Also Published As
Publication number | Publication date |
---|---|
FR2831992B1 (en) | 2004-01-09 |
CA2465882A1 (en) | 2003-05-15 |
FR2831992A1 (en) | 2003-05-09 |
EP1466349A2 (en) | 2004-10-13 |
WO2003041120A3 (en) | 2003-11-27 |
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