WO2003043071A1 - Tampon de polissage e son procede de fabrication - Google Patents

Tampon de polissage e son procede de fabrication Download PDF

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Publication number
WO2003043071A1
WO2003043071A1 PCT/JP2002/010310 JP0210310W WO03043071A1 WO 2003043071 A1 WO2003043071 A1 WO 2003043071A1 JP 0210310 W JP0210310 W JP 0210310W WO 03043071 A1 WO03043071 A1 WO 03043071A1
Authority
WO
WIPO (PCT)
Prior art keywords
grinding
grinding pad
pad
wafers
decrease
Prior art date
Application number
PCT/JP2002/010310
Other languages
English (en)
French (fr)
Inventor
Tetsuo Shimomura
Masahiko Nakamori
Takatoshi Yamada
Takashi Masui
Shigeru Komai
Koichi Ono
Kazuyuki Ogawa
Atsushi Kazuno
Tsuyoshi Kimura
Hiroshi Seyanagi
Original Assignee
Toyo Boseki Kabushiki Kaisha
Toyo Tire & Rubber Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001347410A external-priority patent/JP2003145414A/ja
Priority claimed from JP2001351629A external-priority patent/JP2003145415A/ja
Priority claimed from JP2001374223A external-priority patent/JP3325562B1/ja
Priority claimed from JP2002105459A external-priority patent/JP3359629B1/ja
Priority claimed from JP2002117767A external-priority patent/JP3455208B2/ja
Application filed by Toyo Boseki Kabushiki Kaisha, Toyo Tire & Rubber Co., Ltd. filed Critical Toyo Boseki Kabushiki Kaisha
Priority to US10/494,249 priority Critical patent/US7651761B2/en
Publication of WO2003043071A1 publication Critical patent/WO2003043071A1/ja
Priority to US11/466,878 priority patent/US8318825B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/30—Resins or natural or synthetic macromolecular compounds for close-grained structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C08G18/12—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
    • C08G18/4205—Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups
    • C08G18/4208—Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups containing aromatic groups
    • C08G18/4211—Polycondensates having carboxylic or carbonic ester groups in the main chain containing cyclic groups containing aromatic groups derived from aromatic dicarboxylic acids and dialcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
    • C08G18/4236—Polycondensates having carboxylic or carbonic ester groups in the main chain containing only aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4804—Two or more polyethers of different physical or chemical nature
    • C08G18/4808—Mixtures of two or more polyetherdiols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/61—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
    • C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
    • C08G18/6633—Compounds of group C08G18/42
    • C08G18/6637—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38
    • C08G18/664—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
    • C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
    • C08G18/6666—Compounds of group C08G18/48 or C08G18/52
    • C08G18/667—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38
    • C08G18/6674—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/721—Two or more polyisocyanates not provided for in one single group C08G18/73 - C08G18/80
    • C08G18/724—Combination of aromatic polyisocyanates with (cyclo)aliphatic polyisocyanates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/0061—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof characterized by the use of several polymeric components
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D175/00—Coating compositions based on polyureas or polyurethanes; Coating compositions based on derivatives of such polymers
    • C09D175/04—Polyurethanes
    • C09D175/08—Polyurethanes from polyethers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2101/00—Manufacture of cellular products
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2110/00—Foam properties
    • C08G2110/0041—Foam properties having specified density
    • C08G2110/0066—≥ 150kg/m3
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2205/00—Foams characterised by their properties
    • C08J2205/04—Foams characterised by their properties characterised by the foam pores
    • C08J2205/052—Closed cells, i.e. more than 50% of the pores are closed
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2375/00—Characterised by the use of polyureas or polyurethanes; Derivatives of such polymers
    • C08J2375/04—Polyurethanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249976—Voids specified as closed
PCT/JP2002/010310 2001-11-13 2002-10-03 Tampon de polissage e son procede de fabrication WO2003043071A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/494,249 US7651761B2 (en) 2001-11-13 2002-10-03 Grinding pad and method of producing the same
US11/466,878 US8318825B2 (en) 2001-11-13 2006-08-24 Polishing pad and method of producing the same

Applications Claiming Priority (28)

Application Number Priority Date Filing Date Title
JP2001/347410 2001-11-13
JP2001347410A JP2003145414A (ja) 2001-11-13 2001-11-13 研磨パッド及びその製造方法
JP2001347538 2001-11-13
JP2001/347585 2001-11-13
JP2001347585 2001-11-13
JP2001/347538 2001-11-13
JP2001/351629 2001-11-16
JP2001351629A JP2003145415A (ja) 2001-11-16 2001-11-16 研磨パッド
JP2001374354 2001-12-07
JP2001374223A JP3325562B1 (ja) 2001-12-07 2001-12-07 発泡ポリウレタン研磨パッドの製造方法
JP2001/374354 2001-12-07
JP2001/374223 2001-12-07
JP2001375954 2001-12-10
JP2001/375954 2001-12-10
JP2001378181 2001-12-12
JP2001/378181 2001-12-12
JP2002105459A JP3359629B1 (ja) 2001-04-09 2002-04-08 ポリウレタン組成物からなる研磨パッド
JP2002/105459 2002-04-08
JP2002117767A JP3455208B2 (ja) 2001-11-13 2002-04-19 半導体ウエハ研磨パッド、半導体ウエハの研磨方法、研磨パッド用研磨シート、及び研磨シート用発泡体ブロック
JP2002/117767 2002-04-19
JP2002117623 2002-04-19
JP2002/117623 2002-04-19
JP2002144628 2002-05-20
JP2002144617 2002-05-20
JP2002/144628 2002-05-20
JP2002/144617 2002-05-20
JP2002146495 2002-05-21
JP2002/146495 2002-05-21

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10494249 A-371-Of-International 2002-10-03
US11/466,878 Division US8318825B2 (en) 2001-11-13 2006-08-24 Polishing pad and method of producing the same

Publications (1)

Publication Number Publication Date
WO2003043071A1 true WO2003043071A1 (fr) 2003-05-22

Family

ID=27584948

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/010310 WO2003043071A1 (fr) 2001-11-13 2002-10-03 Tampon de polissage e son procede de fabrication

Country Status (4)

Country Link
US (3) US7651761B2 (ja)
KR (8) KR100877385B1 (ja)
CN (1) CN100592474C (ja)
WO (1) WO2003043071A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006026315A1 (en) * 2004-08-25 2006-03-09 J.H. Rhodes, Inc. A stacked polyuretahane polishing pad
WO2007034980A1 (ja) * 2005-09-22 2007-03-29 Kuraray Co., Ltd. 高分子材料、それから得られる発泡体及びこれらを用いた研磨パッド
US7470170B2 (en) 2004-02-23 2008-12-30 Toyo Tire & Rubber Co., Ltd. Polishing pad and method for manufacture of semiconductor device using the same
US8094456B2 (en) 2006-01-10 2012-01-10 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8148441B2 (en) 2005-03-08 2012-04-03 Toyo Tire & Rubber Co., Ltd. Polishing pad and manufacturing method thereof
US8476328B2 (en) 2008-03-12 2013-07-02 Toyo Tire & Rubber Co., Ltd Polishing pad
US8865785B2 (en) 2007-03-28 2014-10-21 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8993648B2 (en) 2006-08-28 2015-03-31 Toyo Tire & Rubber Co., Ltd. Polishing pad
US9126303B2 (en) 2005-08-30 2015-09-08 Toyo Tire & Rubber Co., Ltd. Method for production of a laminate polishing pad
CN114750467A (zh) * 2022-03-18 2022-07-15 安徽禾臣新材料有限公司 一种半导体加工用无蜡垫及其制备方法

Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777455B2 (en) * 2000-06-13 2004-08-17 Toyo Tire & Rubber Co., Ltd. Process for producing polyurethane foam
JP3455187B2 (ja) * 2001-02-01 2003-10-14 東洋ゴム工業株式会社 研磨パッド用ポリウレタン発泡体の製造装置
US7267607B2 (en) 2002-10-28 2007-09-11 Cabot Microelectronics Corporation Transparent microporous materials for CMP
AU2003302299A1 (en) * 2002-11-27 2004-06-18 Toyo Boseki Kabushiki Kaisha Polishing pad and method for manufacturing semiconductor device
JP3910921B2 (ja) * 2003-02-06 2007-04-25 株式会社東芝 研磨布および半導体装置の製造方法
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US8864859B2 (en) 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US9278424B2 (en) 2003-03-25 2016-03-08 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
SG153668A1 (en) 2003-03-25 2009-07-29 Neopad Technologies Corp Customized polish pads for chemical mechanical planarization
US20050153631A1 (en) * 2004-01-13 2005-07-14 Psiloquest System and method for monitoring quality control of chemical mechanical polishing pads
US20070254191A1 (en) * 2004-08-30 2007-11-01 Showa Denko K.K. Magnetic Disk Substrate and Production Method of Magnetic Disk
JP4475404B2 (ja) * 2004-10-14 2010-06-09 Ｊｓｒ株式会社 研磨パッド
JP3769581B1 (ja) * 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
TWI385050B (zh) * 2005-02-18 2013-02-11 Nexplanar Corp 用於ｃｍｐ之特製拋光墊及其製造方法及其用途
US8304467B2 (en) * 2005-05-17 2012-11-06 Toyo Tire & Rubber Co., Ltd. Polishing pad
JP4897238B2 (ja) * 2005-05-17 2012-03-14 東洋ゴム工業株式会社 研磨パッド
CN101704309B (zh) * 2005-07-15 2014-12-03 东洋橡胶工业株式会社 层叠片及其制造方法
JP4884725B2 (ja) 2005-08-30 2012-02-29 東洋ゴム工業株式会社 研磨パッド
US20070117393A1 (en) * 2005-11-21 2007-05-24 Alexander Tregub Hardened porous polymer chemical mechanical polishing (CMP) pad
DE102005060754A1 (de) * 2005-12-16 2007-07-05 Kronotec Ag Verfahren und Anlage zum Aufbringen fester Partikel auf ein Substrat
CN101426618B (zh) 2006-04-19 2013-05-15 东洋橡胶工业株式会社 抛光垫的制造方法
JP5008927B2 (ja) * 2006-08-31 2012-08-22 東洋ゴム工業株式会社 研磨パッド
MY144784A (en) * 2006-09-08 2011-11-15 Toyo Tire & Rubber Co Method for manufacturing a polishing pad
KR101181885B1 (ko) * 2006-09-08 2012-09-11 도요 고무 고교 가부시키가이샤 연마 패드
WO2008035666A1 (fr) * 2006-09-20 2008-03-27 Konica Minolta Opto, Inc. Procédé pour traiter un disque en verre
US20080171493A1 (en) * 2007-01-12 2008-07-17 San Fang Chemical Industry Co., Ltd. Polishing pad and method of producing the same
SG177961A1 (en) * 2007-01-15 2012-02-28 Toyo Tire & Rubber Co Polishing pad and method for producing the same
BRPI0706060A2 (pt) * 2007-02-05 2011-03-22 American Fuji Seal Inc folha com espuma contraìvel por aquecimento e recipiente
KR101084808B1 (ko) * 2007-03-20 2011-11-21 가부시키가이샤 구라레 금속 막 연마용 패드 및 그것을 이용하는 금속 막의 연마 방법
US8388799B2 (en) * 2008-01-24 2013-03-05 Jsr Corporation Composition for forming polishing layer of chemical mechanical polishing pad, chemical mechanical polishing pad and chemical mechanical polishing method
MY148785A (en) * 2008-01-30 2013-05-31 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk
CN101570002B (zh) * 2008-05-04 2014-08-13 世界先进积体电路股份有限公司 研磨设备
CN101633150B (zh) * 2008-07-24 2012-05-30 贝达先进材料股份有限公司 研磨垫及其微型结构形成方法
EP2349120B1 (en) * 2008-09-04 2017-03-22 Iwalk, Inc. Hybrid terrain-adaptive lower-extremity systems
JP5393434B2 (ja) * 2008-12-26 2014-01-22 東洋ゴム工業株式会社 研磨パッド及びその製造方法
US20100178853A1 (en) * 2009-01-12 2010-07-15 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
US8303375B2 (en) 2009-01-12 2012-11-06 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
US8545292B2 (en) 2009-06-29 2013-10-01 Dic Corporation Two-component urethane resin composition for polishing pad, polyurethane polishing pad, and method for producing polyurethane polishing pad
EP2287254A1 (de) * 2009-07-10 2011-02-23 Evonik Goldschmidt GmbH Kompositformkörper enthaltend oberflächenaktives Additiv
US8551201B2 (en) * 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
US8342908B2 (en) * 2009-08-31 2013-01-01 United Technologies Corporation Thermal mechanical skive for composite machining
JP5528169B2 (ja) 2010-03-26 2014-06-25 東洋ゴム工業株式会社 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
US9156124B2 (en) * 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
CN103180100B (zh) * 2010-10-26 2016-01-13 东洋橡胶工业株式会社 研磨垫及其制造方法
US9132524B2 (en) * 2010-10-26 2015-09-15 Toyo Tire & Rubber Co., Ltd. Polishing pad and method for producing same
JP5479390B2 (ja) 2011-03-07 2014-04-23 信越半導体株式会社 シリコンウェーハの製造方法
JP5687119B2 (ja) * 2011-04-15 2015-03-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP2012256846A (ja) * 2011-05-16 2012-12-27 Elpida Memory Inc 半導体装置の製造方法
KR101532990B1 (ko) * 2011-09-22 2015-07-01 도요 고무 고교 가부시키가이샤 연마 패드
JP5945874B2 (ja) 2011-10-18 2016-07-05 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP5759888B2 (ja) * 2011-12-28 2015-08-05 東洋ゴム工業株式会社 研磨パッド
KR20130090209A (ko) * 2012-02-03 2013-08-13 삼성전자주식회사 기판처리장치 및 기판처리방법
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9034063B2 (en) 2012-09-27 2015-05-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing grooved chemical mechanical polishing layers
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9144880B2 (en) 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
JP5661129B2 (ja) 2013-01-29 2015-01-28 東洋ゴム工業株式会社 研磨パッド
JP6016301B2 (ja) 2013-02-13 2016-10-26 昭和電工株式会社 単結晶ＳｉＣ基板の表面加工方法、その製造方法及び単結晶ＳｉＣ基板の表面加工用研削プレート
US9238296B2 (en) 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer
US9233451B2 (en) 2013-05-31 2016-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad stack
US9238295B2 (en) 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical window polishing pad
CN103333313B (zh) * 2013-06-09 2015-11-18 合肥宏光研磨科技有限公司 一种聚氨酯抛光材料的制造方法
US20140370788A1 (en) * 2013-06-13 2014-12-18 Cabot Microelectronics Corporation Low surface roughness polishing pad
WO2015029294A1 (ja) * 2013-08-28 2015-03-05 株式会社Sumco ウェーハの研磨方法およびウェーハの研磨装置
KR101760495B1 (ko) * 2013-10-04 2017-07-21 주식회사 엘지화학 폴리우레탄 지지 패드의 제조 방법
CN103862365B (zh) * 2014-01-21 2016-05-04 湖北鼎龙化学股份有限公司 聚氨酯材料抛光垫及其制备方法
CN103862364A (zh) * 2014-03-24 2014-06-18 上海华力微电子有限公司 研磨垫、研磨机台及研磨方法
CN106132630B (zh) 2014-04-03 2019-11-26 3M创新有限公司 抛光垫和系统以及制造和使用此类抛光垫和系统的方法
US20150306731A1 (en) 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9649741B2 (en) * 2014-07-07 2017-05-16 Jh Rhodes Company, Inc. Polishing material for polishing hard surfaces, media including the material, and methods of forming and using same
US9731398B2 (en) * 2014-08-22 2017-08-15 Rohm And Haas Electronic Materials Cmp Holding, Inc. Polyurethane polishing pad
US9776361B2 (en) * 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
CN107000158B (zh) 2014-12-19 2020-11-06 应用材料公司 用于化学机械抛光工具的部件
US9481070B2 (en) * 2014-12-19 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-stability polyurethane polishing pad
TWI565735B (zh) * 2015-08-17 2017-01-11 Nanya Plastics Corp A polishing pad for surface planarization processing and a process for making the same
US9484212B1 (en) 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
KR102041588B1 (ko) 2016-09-29 2019-11-06 삼성에스디아이 주식회사 유기 광전자 소자용 화합물, 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치
CN106826540A (zh) * 2017-02-15 2017-06-13 蓝思科技（长沙）有限公司 一种光固型树脂研磨垫及其制备方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
JP7259311B2 (ja) * 2017-12-26 2023-04-18 Dic株式会社 研磨パッド及び研磨パッド用ウレタン樹脂組成物
KR101959555B1 (ko) * 2018-04-13 2019-03-18 에스케이씨 주식회사 연마패드 제조용 우레탄계 프리폴리머, 연마패드 및 이의 제조방법
CN109048698B (zh) * 2018-06-22 2020-08-28 广东伟艺研磨技术开发有限公司 一种聚氨酯抛磨轮及其制备方法
JP2022531478A (ja) * 2019-05-07 2022-07-06 シーエムシー マテリアルズ，インコーポレイティド バットベースの生成を介する化学機械平坦化パッド
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
US11628535B2 (en) 2019-09-26 2023-04-18 Skc Solmics Co., Ltd. Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad
KR102287235B1 (ko) * 2019-10-30 2021-08-06 에스케이씨솔믹스 주식회사 가교도가 조절된 연마패드 및 이의 제조방법
TWI761921B (zh) 2019-10-30 2022-04-21 南韓商Ｓｋｃ索密思股份有限公司 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法
US11484987B2 (en) 2020-03-09 2022-11-01 Applied Materials, Inc. Maintenance methods for polishing systems and articles related thereto
KR102206485B1 (ko) * 2020-03-17 2021-01-22 에스케이씨 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
JP7105334B2 (ja) * 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法
KR102239633B1 (ko) * 2020-04-02 2021-04-13 주식회사 에이앤피티 동 재질 시편 세척기
KR102245260B1 (ko) * 2020-10-06 2021-04-26 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102510019B1 (ko) * 2020-10-06 2023-03-13 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102423956B1 (ko) * 2020-09-07 2022-07-21 에스케이씨솔믹스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
EP3967452A1 (en) * 2020-09-07 2022-03-16 SKC Solmics Co., Ltd. Polishing pad and method of fabricating semiconductor device using the same
KR102420673B1 (ko) * 2020-09-29 2022-07-13 에스케이씨솔믹스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
CN114346894A (zh) * 2020-09-29 2022-04-15 Skc索密思株式会社 抛光垫和使用该抛光垫的半导体器件的制造方法
KR102431390B1 (ko) * 2020-10-06 2022-08-10 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN112223880B (zh) * 2020-10-16 2023-01-17 上海江丰平芯电子科技有限公司 一种研磨垫的制备方法
US11618814B2 (en) 2020-12-04 2023-04-04 Covestro Llc Elastomeric compositions containing a solid residue of isocyanate manufacturing
CN112809548A (zh) * 2021-02-24 2021-05-18 合肥铨得合半导体有限责任公司 一种调整pu材料研磨垫亲疏水性的方法
KR102572960B1 (ko) * 2021-06-10 2023-09-01 에프엔에스테크 주식회사 복수의 패턴 구조체를 포함하는 연마 패드
KR20230128811A (ko) 2022-02-28 2023-09-05 원그램솔루션 주식회사 디스플레이 패널용 진공 흡착기
KR20230153659A (ko) 2022-04-29 2023-11-07 케이피엑스케미칼 주식회사 개선된 성능을 갖는 연마패드
CN115157111B (zh) * 2022-07-13 2024-03-15 安徽禾臣新材料有限公司 一种玻璃加工用抛光垫及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01222868A (ja) * 1988-03-01 1989-09-06 Fujikura Rubber Ltd 研磨材用ポリウレタン組成物およびポリウレタン発泡体の製造方法
JPH06220151A (ja) * 1993-01-22 1994-08-09 Sanyo Chem Ind Ltd 研磨材用ポリウレタン樹脂
JP2000017252A (ja) * 1998-06-29 2000-01-18 Dainippon Ink & Chem Inc 研磨材組成物及びその研磨材
JP2000178374A (ja) * 1998-12-15 2000-06-27 Toyo Tire & Rubber Co Ltd ポリウレタン発泡体の製造方法及び研磨シート
JP2001047355A (ja) * 1999-08-06 2001-02-20 Jsr Corp 研磨パッド用重合体組成物及びそれを用いた研磨パッド
JP2001176829A (ja) * 1999-12-20 2001-06-29 Nitto Denko Corp 半導体ウェーハの研磨方法及び半導体ウェーハ研磨用パッド
JP2001179608A (ja) * 1999-12-22 2001-07-03 Toray Ind Inc 研磨用パッドおよびそれを用いた研磨装置及び研磨方法
JP2001277101A (ja) * 2000-03-28 2001-10-09 Rodel Nitta Co 研磨布
JP2001358101A (ja) * 2000-06-13 2001-12-26 Toray Ind Inc 研磨パッド

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769245A (en) * 1972-05-30 1973-10-30 Goodrich Co B F Thermoplastic polyurethane foam
US4753838A (en) * 1986-06-16 1988-06-28 Tsuguji Kimura Polishing sheet material and method for its production
BR8701098A (pt) * 1987-03-11 1988-09-13 Brastemp Sa Processo de preparacao de poliuretano rigido
JPS63283857A (ja) * 1987-05-15 1988-11-21 Asahi Chem Ind Co Ltd 研磨布
JP2543404B2 (ja) 1989-03-01 1996-10-16 住友化学工業株式会社 研磨研削材料
EP0559216A1 (en) * 1992-03-06 1993-09-08 Tosoh Corporation Process for producing urethan foam having high-density skin layer
GB9216631D0 (en) * 1992-08-05 1992-09-16 Ici Plc Reaction system for preparing microcellular elastomers
US5564965A (en) * 1993-12-14 1996-10-15 Shin-Etsu Handotai Co., Ltd. Polishing member and wafer polishing apparatus
JP2891083B2 (ja) 1993-12-14 1999-05-17 信越半導体株式会社 シート状研磨部材およびウエーハ研磨装置
JP3660375B2 (ja) 1994-06-30 2005-06-15 住化バイエルウレタン株式会社 ポリウレタン発泡体の製造法
JPH0885069A (ja) 1994-09-16 1996-04-02 Mitsuwa:Kk 研摩シート保持具
JP3354744B2 (ja) * 1995-04-25 2002-12-09 ニッタ株式会社 研磨布及びその研磨布の研磨機定盤への脱着方法
JPH0957608A (ja) 1995-08-11 1997-03-04 Sony Corp 研磨パッド及びこれを用いた被表面処理加工物の研磨方法
JP3042593B2 (ja) * 1995-10-25 2000-05-15 日本電気株式会社 研磨パッド
US5704987A (en) * 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5627254A (en) * 1996-05-03 1997-05-06 The Dow Chemical Company Rigid thermoplastic plyurethane comprising units of butane diol and a polyethylene glycol
JP3007603B2 (ja) 1997-04-30 2000-02-07 鐘紡株式会社 防水通気緩衝シートおよびそれを用いた複合被覆防水工法
JPH11302355A (ja) 1998-04-23 1999-11-02 Dainippon Ink & Chem Inc 発泡ポリウレタンエラストマー組成物及び防振材
US6200901B1 (en) * 1998-06-10 2001-03-13 Micron Technology, Inc. Polishing polymer surfaces on non-porous CMP pads
US6022903A (en) * 1998-07-09 2000-02-08 Arco Chemical Technology L.P. Permanent gas blown microcellular polyurethane elastomers
WO2000006624A1 (fr) * 1998-07-31 2000-02-10 Kao Corporation Procede de production de mousse de polyurethane
KR100574311B1 (ko) * 1998-08-28 2006-04-27 도레이 가부시끼가이샤 연마 패드
JP3823308B2 (ja) 1998-12-03 2006-09-20 俊郎 土肥 半導体デバイス研磨装置及びポリシングパッド
JP4080628B2 (ja) 1999-03-30 2008-04-23 日本発条株式会社 再剥離性発泡体ガスケット
JP3316757B2 (ja) 1999-06-04 2002-08-19 富士紡績株式会社 研磨パッド用ウレタン成形物の製造方法及び研磨パッド用ウレタン成形物
TWI228522B (en) * 1999-06-04 2005-03-01 Fuji Spinning Co Ltd Urethane molded products for polishing pad and method for making same
JP4501175B2 (ja) 1999-06-09 2010-07-14 東レ株式会社 研磨パッドの製造方法
JP3558273B2 (ja) 1999-09-22 2004-08-25 東洋ゴム工業株式会社 ポリウレタン発泡体の製造方法及び研磨シート
US6361409B1 (en) 1999-09-28 2002-03-26 Rodel Holdings Inc. Polymeric polishing pad having improved surface layer and method of making same
JP2001138249A (ja) 1999-11-12 2001-05-22 Nihon Micro Coating Co Ltd 研磨シート及びその製造方法
US6437013B2 (en) * 2000-02-17 2002-08-20 Mitsui Chemicals, Inc. Microcellular polyurethane elastomer, and method of producing the same
JP2001357101A (ja) 2000-06-12 2001-12-26 Dainippon Printing Co Ltd 行程案内システム
US6777455B2 (en) * 2000-06-13 2004-08-17 Toyo Tire & Rubber Co., Ltd. Process for producing polyurethane foam
JP2002124491A (ja) 2000-08-10 2002-04-26 Toray Ind Inc 研磨パッド
JP3788729B2 (ja) 2000-08-23 2006-06-21 東洋ゴム工業株式会社 研磨パッド
JP4686912B2 (ja) 2001-06-15 2011-05-25 東レ株式会社 研磨パッド

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01222868A (ja) * 1988-03-01 1989-09-06 Fujikura Rubber Ltd 研磨材用ポリウレタン組成物およびポリウレタン発泡体の製造方法
JPH06220151A (ja) * 1993-01-22 1994-08-09 Sanyo Chem Ind Ltd 研磨材用ポリウレタン樹脂
JP2000017252A (ja) * 1998-06-29 2000-01-18 Dainippon Ink & Chem Inc 研磨材組成物及びその研磨材
JP2000178374A (ja) * 1998-12-15 2000-06-27 Toyo Tire & Rubber Co Ltd ポリウレタン発泡体の製造方法及び研磨シート
JP2001047355A (ja) * 1999-08-06 2001-02-20 Jsr Corp 研磨パッド用重合体組成物及びそれを用いた研磨パッド
JP2001176829A (ja) * 1999-12-20 2001-06-29 Nitto Denko Corp 半導体ウェーハの研磨方法及び半導体ウェーハ研磨用パッド
JP2001179608A (ja) * 1999-12-22 2001-07-03 Toray Ind Inc 研磨用パッドおよびそれを用いた研磨装置及び研磨方法
JP2001277101A (ja) * 2000-03-28 2001-10-09 Rodel Nitta Co 研磨布
JP2001358101A (ja) * 2000-06-13 2001-12-26 Toray Ind Inc 研磨パッド

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7470170B2 (en) 2004-02-23 2008-12-30 Toyo Tire & Rubber Co., Ltd. Polishing pad and method for manufacture of semiconductor device using the same
US7189156B2 (en) 2004-08-25 2007-03-13 Jh Rhodes Company, Inc. Stacked polyurethane polishing pad and method of producing the same
WO2006026315A1 (en) * 2004-08-25 2006-03-09 J.H. Rhodes, Inc. A stacked polyuretahane polishing pad
US8148441B2 (en) 2005-03-08 2012-04-03 Toyo Tire & Rubber Co., Ltd. Polishing pad and manufacturing method thereof
US9126303B2 (en) 2005-08-30 2015-09-08 Toyo Tire & Rubber Co., Ltd. Method for production of a laminate polishing pad
WO2007034980A1 (ja) * 2005-09-22 2007-03-29 Kuraray Co., Ltd. 高分子材料、それから得られる発泡体及びこれらを用いた研磨パッド
US9321142B2 (en) 2005-09-22 2016-04-26 Kuraray Co., Ltd. Polymer material, foam obtained from same, and polishing pad using those
US8094456B2 (en) 2006-01-10 2012-01-10 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8993648B2 (en) 2006-08-28 2015-03-31 Toyo Tire & Rubber Co., Ltd. Polishing pad
US9358661B2 (en) 2006-08-28 2016-06-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
US8865785B2 (en) 2007-03-28 2014-10-21 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8476328B2 (en) 2008-03-12 2013-07-02 Toyo Tire & Rubber Co., Ltd Polishing pad
CN114750467A (zh) * 2022-03-18 2022-07-15 安徽禾臣新材料有限公司 一种半导体加工用无蜡垫及其制备方法
CN114750467B (zh) * 2022-03-18 2023-08-15 安徽禾臣新材料有限公司 一种半导体加工用无蜡垫及其制备方法

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US8318825B2 (en) 2012-11-27
US20060280929A1 (en) 2006-12-14
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US20060280930A1 (en) 2006-12-14
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