WO2003054970A1 - Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu - Google Patents
Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu Download PDFInfo
- Publication number
- WO2003054970A1 WO2003054970A1 PCT/DE2002/004520 DE0204520W WO03054970A1 WO 2003054970 A1 WO2003054970 A1 WO 2003054970A1 DE 0204520 W DE0204520 W DE 0204520W WO 03054970 A1 WO03054970 A1 WO 03054970A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ofet
- threshold voltage
- layer
- intermediate layer
- electronic
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/498,610 US7064345B2 (en) | 2001-12-11 | 2002-09-12 | Organic field effect transistor with off-set threshold voltage and the use thereof |
EP02805263A EP1454362B1 (de) | 2001-12-11 | 2002-12-09 | Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu |
JP2003555592A JP2005513802A (ja) | 2001-12-11 | 2002-12-09 | オフセット閾値電圧を有する有機電界効果トランジスタおよびその使用 |
DE50214320T DE50214320D1 (de) | 2001-12-11 | 2002-12-09 | Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10160732A DE10160732A1 (de) | 2001-12-11 | 2001-12-11 | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
DE10160732.6 | 2001-12-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003054970A1 true WO2003054970A1 (de) | 2003-07-03 |
Family
ID=7708749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/004520 WO2003054970A1 (de) | 2001-12-11 | 2002-12-09 | Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu |
Country Status (5)
Country | Link |
---|---|
US (1) | US7064345B2 (de) |
EP (1) | EP1454362B1 (de) |
JP (1) | JP2005513802A (de) |
DE (2) | DE10160732A1 (de) |
WO (1) | WO2003054970A1 (de) |
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JP2005175254A (ja) * | 2003-12-12 | 2005-06-30 | National Institute Of Advanced Industrial & Technology | ドーピング方法およびそれを用いた半導体素子 |
JP2006090983A (ja) * | 2004-09-27 | 2006-04-06 | Univ Of Tokyo | 面状素子モジュールおよびその製造方法並びに面状素子装置 |
JP2006147785A (ja) * | 2004-11-18 | 2006-06-08 | Matsushita Electric Ind Co Ltd | 電子デバイスおよびそれを用いた電子機器 |
JP2006196856A (ja) * | 2005-01-15 | 2006-07-27 | Samsung Sdi Co Ltd | 薄膜トランジスタ、その製造方法及びそれを備えた平板表示装置 |
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JP2004165427A (ja) * | 2002-11-13 | 2004-06-10 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ素子 |
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2001
- 2001-12-11 DE DE10160732A patent/DE10160732A1/de not_active Ceased
-
2002
- 2002-09-12 US US10/498,610 patent/US7064345B2/en not_active Expired - Fee Related
- 2002-12-09 EP EP02805263A patent/EP1454362B1/de not_active Expired - Fee Related
- 2002-12-09 WO PCT/DE2002/004520 patent/WO2003054970A1/de active Application Filing
- 2002-12-09 JP JP2003555592A patent/JP2005513802A/ja active Pending
- 2002-12-09 DE DE50214320T patent/DE50214320D1/de not_active Expired - Lifetime
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JP2005175254A (ja) * | 2003-12-12 | 2005-06-30 | National Institute Of Advanced Industrial & Technology | ドーピング方法およびそれを用いた半導体素子 |
JP2006090983A (ja) * | 2004-09-27 | 2006-04-06 | Univ Of Tokyo | 面状素子モジュールおよびその製造方法並びに面状素子装置 |
JP2006147785A (ja) * | 2004-11-18 | 2006-06-08 | Matsushita Electric Ind Co Ltd | 電子デバイスおよびそれを用いた電子機器 |
JP2006196856A (ja) * | 2005-01-15 | 2006-07-27 | Samsung Sdi Co Ltd | 薄膜トランジスタ、その製造方法及びそれを備えた平板表示装置 |
US7671359B2 (en) | 2005-01-15 | 2010-03-02 | Samsung Mobile Display Co., Ltd. | Thin film transistor, a method for preparing the same and a flat panel display employing the same |
Also Published As
Publication number | Publication date |
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EP1454362A1 (de) | 2004-09-08 |
JP2005513802A (ja) | 2005-05-12 |
DE50214320D1 (de) | 2010-05-12 |
US20050211972A1 (en) | 2005-09-29 |
DE10160732A1 (de) | 2003-06-26 |
US7064345B2 (en) | 2006-06-20 |
EP1454362B1 (de) | 2010-03-31 |
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