WO2003065776A3 - Methods and apparatus for dishing and erosion characterization - Google Patents
Methods and apparatus for dishing and erosion characterization Download PDFInfo
- Publication number
- WO2003065776A3 WO2003065776A3 PCT/US2003/002359 US0302359W WO03065776A3 WO 2003065776 A3 WO2003065776 A3 WO 2003065776A3 US 0302359 W US0302359 W US 0302359W WO 03065776 A3 WO03065776 A3 WO 03065776A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dishing
- erosion
- characterization
- methods
- target
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
- G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
Abstract
The present invention includes a system for efficient and effective detection and characterization of dishing and/or erosion. An X-ray emission inducer (120) is used to scan a target on a sample (157). The target can be scanned at an acute incident angle to allow characterization of the dishing and/or erosion and analysis of the metallization or thin film layer topology.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35196002P | 2002-01-25 | 2002-01-25 | |
US60/351,960 | 2002-01-25 | ||
US10/242,496 US6810105B2 (en) | 2002-01-25 | 2002-09-12 | Methods and apparatus for dishing and erosion characterization |
US10/242,496 | 2002-09-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003065776A2 WO2003065776A2 (en) | 2003-08-07 |
WO2003065776A3 true WO2003065776A3 (en) | 2003-10-16 |
Family
ID=27616399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/002359 WO2003065776A2 (en) | 2002-01-25 | 2003-01-23 | Methods and apparatus for dishing and erosion characterization |
Country Status (2)
Country | Link |
---|---|
US (1) | US6810105B2 (en) |
WO (1) | WO2003065776A2 (en) |
Families Citing this family (31)
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JP4388270B2 (en) * | 2002-11-18 | 2009-12-24 | 株式会社日立ハイテクノロジーズ | Surface inspection method and surface inspection apparatus |
US7202475B1 (en) * | 2003-03-06 | 2007-04-10 | Kla-Tencor Technologies Corporation | Rapid defect composition mapping using multiple X-ray emission perspective detection scheme |
US7068753B2 (en) * | 2004-07-30 | 2006-06-27 | Jordan Valley Applied Radiation Ltd. | Enhancement of X-ray reflectometry by measurement of diffuse reflections |
US7120228B2 (en) * | 2004-09-21 | 2006-10-10 | Jordan Valley Applied Radiation Ltd. | Combined X-ray reflectometer and diffractometer |
US7110491B2 (en) * | 2004-12-22 | 2006-09-19 | Jordan Valley Applied Radiation Ltd. | Measurement of critical dimensions using X-ray diffraction in reflection mode |
JP2006266689A (en) * | 2005-03-22 | 2006-10-05 | Fujitsu Ltd | Fluorescent x-ray analyzer, fluorescent x-ray analysis method, and fluorescent x-ray analysis program |
US7245695B2 (en) * | 2005-04-11 | 2007-07-17 | Jordan Valley Applied Radiation Ltd. | Detection of dishing and tilting using X-ray fluorescence |
KR101374308B1 (en) * | 2005-12-23 | 2014-03-14 | 조르단 밸리 세미컨덕터즈 리미티드 | Accurate measurement of layer dimensions using xrf |
US7481579B2 (en) * | 2006-03-27 | 2009-01-27 | Jordan Valley Applied Radiation Ltd. | Overlay metrology using X-rays |
US20070274447A1 (en) * | 2006-05-15 | 2007-11-29 | Isaac Mazor | Automated selection of X-ray reflectometry measurement locations |
US7593017B2 (en) * | 2006-08-15 | 2009-09-22 | 3M Innovative Properties Company | Display simulator |
IL180482A0 (en) * | 2007-01-01 | 2007-06-03 | Jordan Valley Semiconductors | Inspection of small features using x - ray fluorescence |
US8388762B2 (en) * | 2007-05-02 | 2013-03-05 | Lam Research Corporation | Substrate cleaning technique employing multi-phase solution |
US7720169B2 (en) * | 2007-05-10 | 2010-05-18 | Ilan Reuven | Multiple-input multiple-output (MIMO) detector incorporating efficient signal point search and soft information refinement |
US7680243B2 (en) * | 2007-09-06 | 2010-03-16 | Jordan Valley Semiconductors Ltd. | X-ray measurement of properties of nano-particles |
KR100937590B1 (en) * | 2007-10-23 | 2010-01-20 | 한국전자통신연구원 | Multiple quality image contents service system and upgrade method thereof |
US8243878B2 (en) * | 2010-01-07 | 2012-08-14 | Jordan Valley Semiconductors Ltd. | High-resolution X-ray diffraction measurement with enhanced sensitivity |
US8687766B2 (en) | 2010-07-13 | 2014-04-01 | Jordan Valley Semiconductors Ltd. | Enhancing accuracy of fast high-resolution X-ray diffractometry |
US8437450B2 (en) | 2010-12-02 | 2013-05-07 | Jordan Valley Semiconductors Ltd. | Fast measurement of X-ray diffraction from tilted layers |
US8781070B2 (en) | 2011-08-11 | 2014-07-15 | Jordan Valley Semiconductors Ltd. | Detection of wafer-edge defects |
US9390984B2 (en) | 2011-10-11 | 2016-07-12 | Bruker Jv Israel Ltd. | X-ray inspection of bumps on a semiconductor substrate |
US9389192B2 (en) | 2013-03-24 | 2016-07-12 | Bruker Jv Israel Ltd. | Estimation of XRF intensity from an array of micro-bumps |
US9632043B2 (en) | 2014-05-13 | 2017-04-25 | Bruker Jv Israel Ltd. | Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF |
US9726624B2 (en) | 2014-06-18 | 2017-08-08 | Bruker Jv Israel Ltd. | Using multiple sources/detectors for high-throughput X-ray topography measurement |
US9606073B2 (en) | 2014-06-22 | 2017-03-28 | Bruker Jv Israel Ltd. | X-ray scatterometry apparatus |
US9829448B2 (en) | 2014-10-30 | 2017-11-28 | Bruker Jv Israel Ltd. | Measurement of small features using XRF |
JP6999268B2 (en) | 2016-01-11 | 2022-01-18 | ブルカー テクノロジーズ リミテッド | Methods and equipment for X-ray scatterometry |
US10816487B2 (en) | 2018-04-12 | 2020-10-27 | Bruker Technologies Ltd. | Image contrast in X-ray topography imaging for defect inspection |
JP2019191167A (en) | 2018-04-23 | 2019-10-31 | ブルカー ジェイヴィ イスラエル リミテッドBruker Jv Israel Ltd. | X ray source optical system for small-angle x-ray scatterometry |
WO2020008420A2 (en) | 2018-07-05 | 2020-01-09 | Bruker Jv Israel Ltd. | Small-angle x-ray scatterometry |
US11781999B2 (en) | 2021-09-05 | 2023-10-10 | Bruker Technologies Ltd. | Spot-size control in reflection-based and scatterometry-based X-ray metrology systems |
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US4959878A (en) * | 1989-07-11 | 1990-10-02 | Christine Essek | Invalid bed |
US6351516B1 (en) * | 1999-12-14 | 2002-02-26 | Jordan Valley Applied Radiation Ltd. | Detection of voids in semiconductor wafer processing |
US6453002B1 (en) * | 2000-04-18 | 2002-09-17 | Jordan Valley Applied Radiation Ltd. | Differential measurement of X-ray microfluorescence |
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-
2002
- 2002-09-12 US US10/242,496 patent/US6810105B2/en not_active Expired - Fee Related
-
2003
- 2003-01-23 WO PCT/US2003/002359 patent/WO2003065776A2/en not_active Application Discontinuation
Patent Citations (3)
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---|---|---|---|---|
US4959878A (en) * | 1989-07-11 | 1990-10-02 | Christine Essek | Invalid bed |
US6351516B1 (en) * | 1999-12-14 | 2002-02-26 | Jordan Valley Applied Radiation Ltd. | Detection of voids in semiconductor wafer processing |
US6453002B1 (en) * | 2000-04-18 | 2002-09-17 | Jordan Valley Applied Radiation Ltd. | Differential measurement of X-ray microfluorescence |
Also Published As
Publication number | Publication date |
---|---|
US20030142782A1 (en) | 2003-07-31 |
US6810105B2 (en) | 2004-10-26 |
WO2003065776A2 (en) | 2003-08-07 |
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