WO2003071601A2 - Circuit module and method for the production thereof - Google Patents

Circuit module and method for the production thereof Download PDF

Info

Publication number
WO2003071601A2
WO2003071601A2 PCT/DE2003/000430 DE0300430W WO03071601A2 WO 2003071601 A2 WO2003071601 A2 WO 2003071601A2 DE 0300430 W DE0300430 W DE 0300430W WO 03071601 A2 WO03071601 A2 WO 03071601A2
Authority
WO
WIPO (PCT)
Prior art keywords
circuit carrier
circuit
circuit module
carrier sections
electronic components
Prior art date
Application number
PCT/DE2003/000430
Other languages
German (de)
French (fr)
Other versions
WO2003071601A3 (en
Inventor
Robert Bergmann
Wolfram Hable
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2003071601A2 publication Critical patent/WO2003071601A2/en
Publication of WO2003071601A3 publication Critical patent/WO2003071601A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4905—Shape
    • H01L2224/49051—Connectors having different shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0101—Neon [Ne]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the invention relates to a circuit module with a plurality of electronic components and a manufacturing method of the same according to the preamble of the independent claims.
  • a device for packaging electronic components by means of injection molding technology is known from patent application 1026508.5.
  • a large number of electronic components are packaged on a first side of a circuit carrier made of a large-area ceramic substrate in a plastic housing.
  • a size of more than 4 cm 2 is defined as a large area.
  • the known device In order to compensate for the difference in the coefficient of expansion between the ceramic substrate and the plastic housing, the known device is used to bulge the large-area ceramic substrate before the plastic housing compound is applied, and is therefore exposed to a high load and risk of breakage.
  • a circuit module In the shrinking of the plastic compound for the housing after the molten application of the same to the bulging ceramic substrate, a circuit module can be implemented that at room temperature and at the operating temperatures of the
  • Circuit module despite a large ceramic substrate has a flat and stress-free housing.
  • the known device thus achieves a balance between the different thermal expansion coefficients of plastic and ceramic in that the large-area ceramic substrate is bulged out before the application of a plastic compound using a complex device becomes. It is desirable to avoid the elaborate bulging with the associated risk of breakage of a large-area ceramic and nevertheless to create a possibility of accommodating a large-area circuit board in a plastic housing without stress, especially since the number of electronic components on the ceramic circuit board increases the need for large-area Ceramic carriers are constantly increasing.
  • the object of the invention is to specify a circuit module with several electronic components and to provide a corresponding method for producing the circuit module, in which a compensation of the different thermal expansion coefficients of ceramic and plastic mass is created.
  • the circuit module with a plurality of electronic components has a circuit carrier made of ceramic and a housing made of plastic.
  • the thermal expansion coefficient of the circuit carrier is smaller than that of the plastic housing in which the circuit carrier is packaged with the electronic components, the circuit carrier is separated into a plurality of circuit carrier sections, each of which is electrically connected to one another via bond connections in the plastic housing.
  • the segmentation of the large-area circuit carrier sections, which are electrically connected to one another by flexible bond connections in the plastic housing reduces the thermal stresses due to the different coefficients of thermal expansion and compensates. which makes it possible to provide circuit carriers of any size for a circuit module without complex devices and techniques.
  • circuit carrier It is only necessary to separate the circuit carrier into circuit carrier sections before packaging the circuit carrier in a plastic housing compound, and the individual circuit carrier sections are to be electrically connected to one another with bond connections. This effort is less than the effort for bulging the large-area ceramic substrate.
  • circuit carrier area can be expanded as desired by adding further circuit carrier sections.
  • the area size per circuit carrier section should not exceed the value of 4 cm 2 .
  • the circuit carrier sections can be arranged in rows and columns, so that there remains a distance between 1 and 5 mm, which is to be bridged by the electrical bond connections. In the circuit module according to the invention, this distance is also filled with plastic housing compound.
  • the back of the circuit carrier sections can protrude from the plastic housing compound or is at least kept free of plastic housing compound in order to ensure an intensive heat exchange of the ceramic with the surroundings.
  • Ceramic because of its crystallinity, has a higher thermal conductivity than the plastic housing mass, the electronic components can be cooled more intensively from the back of the circuit carrier.
  • the rear side of the circuit module can be connected to a metallic heat sink by possibly arranging a cooling plate with heat sinks on the rear side of the circuit module.
  • circuit carrier sections As the size of the electronic components increases, it becomes necessary for circuit carrier sections to have at least one surface size, which makes it possible for at least one electronic component to be accommodated in each case on a circuit carrier section.
  • Such electronic components have semiconductor chips with active semiconductor components which generate a limited heat loss and are therefore not only electrically connected to other semiconductor chips via the circuit carrier section, but are also thermally balanced with the surroundings in terms of thermal engineering. This thermal compensation is particularly important for circuit modules whose electronic components have power diodes, power transistors, bipolar power transistors with an insulated gate and / or MOS transistors.
  • each circuit carrier section made of ceramic already means a heat sink, via which the power loss can be effectively reduced.
  • each circuit carrier section can also have passive components and / or rewiring lines, it being possible for passive components, such as resistors, capacitors and coils, to be introduced directly on the surface of the circuit carrier section by structuring a metallic coating of the circuit carrier section.
  • the Rewiring lines on the circuit carrier section can be connected to the electrodes of the electronic components or to their external contacts via bond connections.
  • Aluminum bond wires can be used for this purpose, which are ultrasonically
  • Bonding methods can realize bond connections for signal and / or data transmission, whereby aluminum bond wires with a diameter between 18 and 100 ⁇ m can be used for these small signals, while for supply connections the aluminum bond wire has diameters between 100 and 750 ⁇ m.
  • the diameter of the bond connections between the ceramic circuit carrier sections can be adapted to the respective current load, supply connections having diameters between 100 and 750 ⁇ m being realized.
  • the arrangement has a notching tool which is arranged in a region of an aluminum bond wire guide.
  • the cooling of the circuit module on its rear side can be further intensified by forming cooling fins on a heat sink.
  • a method for producing a circuit module with a plurality of electronic components has the following method steps: First, a plurality of circuit carrier sections, which have contact connection areas for flat conductors of a flat conductor frame and for bond connections, are equipped with a plurality of electronic components. Then the printed circuit board sections are arranged next to one another with joints between the circuit board sections. After that, flat conductors become a flat conductor frame attached to corresponding contact pads and the circuit carrier sections additionally connected to one another via bond connections between corresponding contact pads to form a multi-substrate module. Finally, the multi-substrate module is packed into a circuit module in a plastic mass.
  • the electronic components can either be soldered onto correspondingly provided metallic contact areas of a rewiring line pattern that can be applied to each circuit carrier section, or can be fixed at predetermined positions on a rewiring line pattern with a semiconductor chip brush using an electrically conductive adhesive.
  • the electrodes of the electronic components can then be bonded to this rewiring line pattern on the circuit carrier section.
  • relatively thin aluminum bonding wires are used for signal and data lines microns with a diameter between 25 and 100, while power supply lines relatively "thick aluminum bonding wires microns with a diameter from 100 to 750 are used.
  • the joints created when the circuit carrier is arranged are then again electrically bridged by bonding aluminum wires using a wedge-wedge ultrasonic bond at room temperature.
  • outer flat conductors of a flat conductor frame are brought up to the individual circuit carrier sections and connected to contact connection surfaces of the rewiring line pattern, so that during the subsequent packaging in a plastic housing mass, these flat conductors as Protrude external connections from the plastic housing mass, but at least have exposed surfaces for contacting from the outside.
  • Circuit carrier of such a multi-chip module is separated m individual circuit carrier sections. This prevents an impermissibly high deflection of the circuit module and also increases the reliability, which was previously impaired by the difference between a ceramic material and a plastic material, because high thermal stresses and thus mechanical forces could occur.
  • each circuit carrier section is limited in order to keep the mechanical stresses and thus the deflection in an acceptable frame, so that they do not take effect externally and the dissipation of power losses due to deflection or delamination is not hindered.
  • the mechanical stresses are significantly reduced by dividing the circuit carrier into several small ceramic individual substrates.
  • the deflection of the circuit module through the use of several individual substrates is reduced in such a way that it can no longer be ascertained with the naked eye.
  • FIG. 1 shows a schematic top view of a circuit module 1 of a first embodiment of the invention
  • FIG. 2 shows a schematic cross section through the circuit module 1 of the first embodiment of the invention along the section line A-A of FIG. 1,
  • Figure 3 shows a schematic plan view of a circuit module of a second embodiment of the invention.
  • FIG. 1 shows a schematic top view of a circuit module 1 of a first embodiment of the invention.
  • Reference number 2 denotes electronic components which are arranged in the circuit module.
  • the reference symbol 3 denotes the circuit carrier made of ceramic, which in this embodiment of the invention is divided into three circuit carrier sections 5 and carries the electronic components 2.
  • the reference numeral 6 denotes bond connections between the circuit carrier sections 5 in order to electrically connect them to one another.
  • the reference symbol 8 denotes a ne plastic mass, which forms the housing 4 made of plastic, in which electronic components 2 are embedded.
  • the reference symbol 9 denotes semiconductor chips which belong to the electronic components 2 of the circuit module shown here.
  • the reference number 10 denotes power diodes and the reference number 11 power transistors.
  • the reference numeral 16 denotes separating joints between the circuit carrier sections 5, which occur when a plurality of circuit carrier sections 5 are arranged to form a circuit carrier 3.
  • the reference numeral 17 designates aluminum bonding wires, which ensure the bonding connections between the individual circuit carrier sections 5 and bridge the joints.
  • Supply services are supplied to the circuit module 1 shown in FIG. 1 via wide outer flat conductors 18, which are electrically connected with their inner flat conductor ends to corresponding contact connection areas of a rewiring line pattern on the circuit carrier sections 5.
  • the rewiring line pattern on the circuit carrier sections 5 made of ceramic is omitted.
  • the active electronic components composed of diodes 10 and power transistors 11 are supplied with corresponding currents via the supply flat conductor 18.
  • Control signals and data are supplied to the circuit module 1 via the narrower outer flat conductors 19 of the circuit module 1 shown in FIG.
  • circuit carrier 3 made of ceramic By separating the circuit carrier 3 made of ceramic into three circuit carrier sections 5 and then twisting the circuit carrier sections 5 via the bond connections 6 to form a multi-substrate component, that the different coefficient of thermal expansion between the ceramic and the plastic mass of the housing does not have the effect that a substantial deflection of the entire component occurs.
  • the circuit carrier sections made of ceramic are kept smaller than 4 cm 2 , so that the thermal stresses between ceramic carrier shield 5 and plastic housing mass 8 m remain within permissible limits without impairing the reliability of the circuit module.
  • the plastic housing compound and the plastic housing are only indicated in outline with a dashed line m in this FIG. 1 in order to increase the clarity of the illustration.
  • Figure 2 shows a schematic cross section through the circuit module 1 of the first embodiment of the invention along the section line A-A of Figure 1.
  • Components with the same functions as m figure are identified by the same reference numerals and not discussed separately.
  • the plastic housing compound 8 includes the three ceramic circuit carrier sections 5 shown in FIG. 1, a power diode 10 and a power transistor 11 being visible on each of the circuit carrier sections 5 on the carrier sections 5 m of this cross section.
  • the power components that is to say the diode 10 and the power transistor 11, are connected to one another via bonding wires 15.
  • the output electrode 20 of the power transistor 11 is connected via a further bonding wire 15 to a rewiring line 21, which in turn forms a contact connection area 22 on which a correspondingly thick aluminum bonding wire 17 establishes the electrical connection to the adjacent circuit carrier section 5.
  • a flat conductor 18 is fastened on the circuit carrier 3, which in turn is electrically connected to a contact connection area 22.
  • Figure 3 shows a schematic plan view of a circuit module 1 of a second embodiment of the invention.
  • Components with the same functions as in the previous figures are identified by the same reference numerals and are not discussed separately.
  • the only difference between the first embodiment of the invention and the second embodiment of the invention is that here a larger circuit carrier 3 made of ceramic is divided into six circuit carrier sections 5, which are arranged in rows and columns to form a rectangular circuit module 1.
  • the distances or joints 16 between the individual circuit carrier sections 5 are overcome in the plastic housing compound 8 by means of corresponding bond connections 6 made of an aluminum wire 18.
  • the mechanical separation of the large circuit carrier 3 into six small circuit carrier sections 5 ensures that the difference in the coefficient of thermal expansion between ceramic and plastic is kept within reasonable limits, so that the reliability of such a large circuit module is improved.
  • 12 thicker bond wires with a diameter between 100 ⁇ m and 750 ⁇ m are used for supply connections than for signal and data lines with a diameter between 18 ⁇ m and 100 ⁇ m.

Abstract

The invention relates to a circuit module (1) comprising a plurality of electronic components (2) and a method for the production thereof. Said circuit module (1) comprises a circuit carrier (3) which is ceramic and a housing made of synthetic material (4). The differences in thermal expansion coefficients are minimised in such a way that the circuit carrier (3) is separated with electronic components (2) into a plurality of circuit carrier sections (5) The partitioning lines are electrically bridged by corresponding bond connections (6) in the synthetic material housing (4).

Description

Beschreibung description
Schaltungsmodul und Verfahren zu seiner HerstellungCircuit module and method for its manufacture
Die Erfindung betrifft, ein Schaltungsmodul mit mehreren elektronischen Bauteilen und ein Herstellungsverfahren desselben gemäß der Gattung der unabhängigen Ansprüche.The invention relates to a circuit module with a plurality of electronic components and a manufacturing method of the same according to the preamble of the independent claims.
Aus der Patentanmeldung 1026508.5 ist eine Vorrichtung zum Verpacken elektronischer Bauteile mittels Spritzgusstechnik bekannt. Dabei wird eine Vielzahl elektronischer Bauteile auf einer ersten Seite eines Schaltungsträgers aus einem großflächigen Keramiksubstrat in einem Gehäuse aus Kunststoff verpackt. In diesem Zusammenhang wird als Großflächigkeit eine Größenordnung von mehr als 4 cm2 definiert.A device for packaging electronic components by means of injection molding technology is known from patent application 1026508.5. A large number of electronic components are packaged on a first side of a circuit carrier made of a large-area ceramic substrate in a plastic housing. In this context, a size of more than 4 cm 2 is defined as a large area.
Um den Unterschied im Ausdehnungskoeffizienten zwischen Keramiksubstrat und Kunststoffgehäuse auszugleichen, wird mit der bekannten Vorrichtung das großflächige Keramiksubstrat vor dem Aufbringen der Kunststoffgehäusemasse gewölbt, und damit einer hohen Belastung und Bruchgefahr ausgesetzt. Bei dem Schrumpfen der Kunststoffmasse für das Gehäuse nach dem schmelzflüssigen Aufbringen derselben auf das vorgewölbte Keramiksubstrat kann ein Schaltungsmodul verwirklicht werden, der bei Raumtemperatur und bei den Betriebstemperaturen desIn order to compensate for the difference in the coefficient of expansion between the ceramic substrate and the plastic housing, the known device is used to bulge the large-area ceramic substrate before the plastic housing compound is applied, and is therefore exposed to a high load and risk of breakage. In the shrinking of the plastic compound for the housing after the molten application of the same to the bulging ceramic substrate, a circuit module can be implemented that at room temperature and at the operating temperatures of the
Schaltungsmoduls trotz großflächigem Keramiksubstrat ein ebene und spannungsfreies Gehäuse aufweist.Circuit module despite a large ceramic substrate has a flat and stress-free housing.
Somit wird mit der bekannten Vorrichtung ein Ausgleich zwi- sehen den unterschiedlichen thermischen Ausdehnungskoeffizienten von Kunststoff und Keramik dadurch erreicht, dass mit einer aufwendigen Vorrichtung das großflächige Keramiksubstrat vor dem Aufbringen einer Kunststoffmasse vorgewölbt wird. Es ist wünschenswert, das aufwendige Vorwölben mit der damit verbundenen Bruchgefahr einer großflächigen Keramik zu vermeiden und dennoch eine Möglichkeit zu schaffen, einen großflächigen Schaltungsträger spannungsfrei in einem Kunst- Stoffgehäuse unterzubringen, zumal mit zunehmender Anzahl von elektronischen Bauteilen auf dem keramischen Schaltungsträger der Bedarf an großflächigen Keramikträgern ständig zunimmt.The known device thus achieves a balance between the different thermal expansion coefficients of plastic and ceramic in that the large-area ceramic substrate is bulged out before the application of a plastic compound using a complex device becomes. It is desirable to avoid the elaborate bulging with the associated risk of breakage of a large-area ceramic and nevertheless to create a possibility of accommodating a large-area circuit board in a plastic housing without stress, especially since the number of electronic components on the ceramic circuit board increases the need for large-area Ceramic carriers are constantly increasing.
Aufgabe der Erfindung ist es, ein Schaltungsmodul mit mehre- ren elektronischen Bauteilen anzugeben und ein entsprechendes Verfahren zur Herstellung des Schaltungsmoduls zur Verfügung zu stellen, bei dem ein Ausgleich der unterschiedlichen thermischen Ausdehnungskoeffizienten von Keramik- und Kunststoffmasse geschaffen wird.The object of the invention is to specify a circuit module with several electronic components and to provide a corresponding method for producing the circuit module, in which a compensation of the different thermal expansion coefficients of ceramic and plastic mass is created.
Diese Aufgabe wird mit dem Gegenstand der unabhängigen Ansprüche gelöst. Vorteilhafte Weiterbildungen der Erfindung ergeben sich aus den abhängigen Ansprüchen.This object is achieved with the subject matter of the independent claims. Advantageous developments of the invention result from the dependent claims.
Erfindungsgemäß weist das Schaltungsmodul mit mehreren elektronischen Bauteilen einen Schaltungsträger aus Keramik und ein Gehäuse aus Kunststoff auf. Zwar ist der thermische Ausdehnungskoeffizient des Schaltungsträgers kleiner als der des Kunststoffgehäuses, in dem der Schaltungsträger mit den elektronischen Bauteilen verpackt ist, jedoch ist der Schaltungsträger in mehrere Schaltungsträgerabschnitt aufgetrennt, die jeweils über Bondverbindungen in dem Kunststoffgehäuse untereinander elektrisch verbunden sind. Durch die Segmentierung der großflächigen Schaltungsträgerabschnitte, die elek- trisch durch flexible Bondverbindungen in dem Kunststof gehäuse untereinander verbunden sind, werden die thermischen Spannungen aufgrund der unterschiedlichen thermischen Ausdehnungskoeffizienten vermindert und ein Ausgleich geschaffen, der es ermöglicht, ohne aufwendige Vorrichtungen und Techniken beliebig große Schaltungsträger für ein Schaltungsmodul vorzusehen.According to the invention, the circuit module with a plurality of electronic components has a circuit carrier made of ceramic and a housing made of plastic. Although the thermal expansion coefficient of the circuit carrier is smaller than that of the plastic housing in which the circuit carrier is packaged with the electronic components, the circuit carrier is separated into a plurality of circuit carrier sections, each of which is electrically connected to one another via bond connections in the plastic housing. The segmentation of the large-area circuit carrier sections, which are electrically connected to one another by flexible bond connections in the plastic housing, reduces the thermal stresses due to the different coefficients of thermal expansion and compensates. which makes it possible to provide circuit carriers of any size for a circuit module without complex devices and techniques.
Lediglich ist vor dem Verpacken des Schaltungsträgers in eine Kunststoffgehäusemasse der Schaltungsträger in Schaltungsträgerabschnitte aufzutrennen und die einzelnen Schaltungsträgerabschnitte sind untereinander mit Bondverbindungen elektrisch zu verbinden. Dieser Aufwand ist geringer als der Auf- wand für ein Vorwölben des großflächigen Keramiksubstrats.It is only necessary to separate the circuit carrier into circuit carrier sections before packaging the circuit carrier in a plastic housing compound, and the individual circuit carrier sections are to be electrically connected to one another with bond connections. This effort is less than the effort for bulging the large-area ceramic substrate.
Außerdem ist die Bruchgefahr eines großflächigen Keramiksubstrats vollständig überwunden, da die Großflächigkeit gezielt vermieden wird.In addition, the risk of breakage of a large-area ceramic substrate is completely overcome, since the large area is specifically avoided.
Ein weiterer Vorteil dieser Erfindung liegt darin, dass die Schaltungsträgerfläche durch Hinzufügung von weiteren Schaltungsträgerabschnitten beliebig erweitert werden kann. Um problemlos diese Schaltungsträgerabschnitte in einer Kunststoffgehäusemasse unterzubringen, sollte die Flächengröße pro Schaltungsträgerabschnitt den Wert von 4 cm2 nicht überschreiten.Another advantage of this invention is that the circuit carrier area can be expanded as desired by adding further circuit carrier sections. In order to easily accommodate these circuit carrier sections in a plastic housing compound, the area size per circuit carrier section should not exceed the value of 4 cm 2 .
Die Schaltungsträgerabschnitte können nach dem Auftrennen in Zeilen und Spalten angeordnet sein, so dass dazwischen ein Abstand zwischen 1 und 5 mm, der von den elektrischen Bondverbindungen zu überbrücken ist, verbleibt. Dieser Abstand ist bei dem erfindungsgemäßen Schaltungsmodul ebenfalls mit Kunststoffgehäusemasse aufgefüllt .After the separation, the circuit carrier sections can be arranged in rows and columns, so that there remains a distance between 1 and 5 mm, which is to be bridged by the electrical bond connections. In the circuit module according to the invention, this distance is also filled with plastic housing compound.
Die Rückseite der Schaltungsträgerabschnitte kann aus dem Kunststoffgehäusemasse herausragen oder ist zumindest von Kunststoffgehäusemasse freigehalten, um einen intensiven Wärmeaustausch der Keramik mit der Umgebung zu gewährleisten. Da Keramik aufgrund seiner Kristallinitat eine höhere Wärmeleitfähigkeit aufweist als die Kunststoffgehäusemasse können die elektronischen Bauteile von der Ruckseite der Schaltungstragerabschmtte aus intensiver gekühlt werden. Um diese Kuhlwirkung weiter zu erhohen, kann die Ruckseite des Schaltungsmoduls mit einer metallischen Warmesenke verbunden werden, indem eine Kuhlplatte eventuell mit Kühlkörpern auf der Ruckseite des Schaltungsmoduls angeordnet wird.The back of the circuit carrier sections can protrude from the plastic housing compound or is at least kept free of plastic housing compound in order to ensure an intensive heat exchange of the ceramic with the surroundings. There Ceramic, because of its crystallinity, has a higher thermal conductivity than the plastic housing mass, the electronic components can be cooled more intensively from the back of the circuit carrier. In order to further increase this cooling effect, the rear side of the circuit module can be connected to a metallic heat sink by possibly arranging a cooling plate with heat sinks on the rear side of the circuit module.
Mit zunehmender Flachengroße der elektronischen Bauteile wird es erforderlich, dass Schaltungstragerabschmtte mindestens eine Flachegroße aufweisen, die es ermöglicht, dass jeweils mindestens ein elektronisches Bauteil auf einem Schaltungs- tragerabschnitt untergebracht werden kann. Derartige elektro- nische Bauteile weisen Halbleiterchips mit aktiven Halblei- terbauelementen auf, die eine begrenzte Verlustwarme erzeugen und somit über den Schaltungstragerabschnitt nicht nur elektrisch mit anderen Halbleiterchips verbunden sind, sondern auch warmetechnisch mit der Umgebung im thermischen Ausgleich stehen. Dieser thermische Ausgleich ist insbesondere wichtig für Schaltungsmodule, deren elektronische Bauteile Leistungsdioden, Leistungstransistoren, Bipolarleistungstransistoren mit isoliertem Gate und/oder MOS-Transistoren aufweisen. Für derartige elektronische Bauteile bedeutet jeder Schaltungs- tragerabschnitt aus Keramik bereits eine Warmesenke, über welche die Verlustleistung effektiv abgebaut werden kann.As the size of the electronic components increases, it becomes necessary for circuit carrier sections to have at least one surface size, which makes it possible for at least one electronic component to be accommodated in each case on a circuit carrier section. Such electronic components have semiconductor chips with active semiconductor components which generate a limited heat loss and are therefore not only electrically connected to other semiconductor chips via the circuit carrier section, but are also thermally balanced with the surroundings in terms of thermal engineering. This thermal compensation is particularly important for circuit modules whose electronic components have power diodes, power transistors, bipolar power transistors with an insulated gate and / or MOS transistors. For such electronic components, each circuit carrier section made of ceramic already means a heat sink, via which the power loss can be effectively reduced.
Darüber hinaus kann jeder Schaltungstragerabschnitt auch passive Bauelemente und/oder Umverdrahtungsleitungen aufweisen, wobei passive Bauelemente, wie Widerstände, Kondensatoren und Spulen unmittelbar auf der Oberflache des Schaltungstragerab- schnitts durch Strukturierung einer metallischen Beschichtung des Schaltungstragerabschmtts eingebracht werden können. Die Umverdrahtungsleitungen auf dem Schaltungstragerabschnitt können über Bondverbindungen mit den Elektroden der elektronischen Bauteile oder mit deren Außenkontakten verbunden sein. Dazu können Aluminiumbonddrahte eingesetzt werden, die bei Raumtemperatur in einem Wedge-Wedge-Ultraschall-In addition, each circuit carrier section can also have passive components and / or rewiring lines, it being possible for passive components, such as resistors, capacitors and coils, to be introduced directly on the surface of the circuit carrier section by structuring a metallic coating of the circuit carrier section. The Rewiring lines on the circuit carrier section can be connected to the electrodes of the electronic components or to their external contacts via bond connections. Aluminum bond wires can be used for this purpose, which are ultrasonically
Bondverfahren Bondverbindungen für Signal- und/oder Datenübertragung realisieren können, wobei für diese Kleinsignale Aluminiumbonddrahte mit einem Durchmesser zwischen 18 und 100 μm eingesetzt werden können, wahrend für Versorgungsverbm- düngen der Aluminiumbonddraht Durchmesser zwischen 100 und 750 μm aufweist.Bonding methods can realize bond connections for signal and / or data transmission, whereby aluminum bond wires with a diameter between 18 and 100 μm can be used for these small signals, while for supply connections the aluminum bond wire has diameters between 100 and 750 μm.
Die Bondverbindungen zwischen den keramischen Schaltungstra- gerabschnitten können mit ihren Durchmessern an die jeweilige Strombelastung angepaßt werden, wobei Versorgungsverbindungen mit Durchmessern zwischen 100 und 750 μm realisiert werden. Für derart dicke Bonddrahte weist die Anordnung ein Kerbwerkzeug auf, das m einem Bereich einer Aluminiumbonddrahtfuhrung angeordnet ist.The diameter of the bond connections between the ceramic circuit carrier sections can be adapted to the respective current load, supply connections having diameters between 100 and 750 μm being realized. For bond wires of this thickness, the arrangement has a notching tool which is arranged in a region of an aluminum bond wire guide.
Die Kühlung des Schaltungsmoduls auf seiner Ruckseite kann durch Ausbilden von Kuhlrippen auf einer Warmesenke weiter intensiviert werden.The cooling of the circuit module on its rear side can be further intensified by forming cooling fins on a heat sink.
Ein Verfahren zur Herstellung eines Schaltungsmoduls mit mehreren elektronischen Bauteilen weist nachfolgende Verfahrensschritte auf: Zunächst werden mehrere Schaltungstragerabschmtte, die Kontaktanschlußflachen für Flachleiter eines Flachleiterrahmens und für Bondverbindungen aufweisen, mit mehreren elektronischen Bauteilen bestuckt. Anschließend werden die bestuckten Schaltungstragerabschmtte nebeneinander mit Trennfugen zwischen den Schaltungstragerabsch tten angeordnet. Danach werden Flachleiter eines Flachleiterrahmens auf entsprechenden Kontaktanschlußflächen angebracht und die Schaltungsträgerabschnitte zusätzlich untereinander über Bondverbindungen zwischen entsprechenden Kontaktanschlußflächen zu einem Multisubstratbaustein verbunden. Abschließend wird der Multisubstratbaustein zu einem Schaltungsmodul in einer Kunststoffmasse verpackt.A method for producing a circuit module with a plurality of electronic components has the following method steps: First, a plurality of circuit carrier sections, which have contact connection areas for flat conductors of a flat conductor frame and for bond connections, are equipped with a plurality of electronic components. Then the printed circuit board sections are arranged next to one another with joints between the circuit board sections. After that, flat conductors become a flat conductor frame attached to corresponding contact pads and the circuit carrier sections additionally connected to one another via bond connections between corresponding contact pads to form a multi-substrate module. Finally, the multi-substrate module is packed into a circuit module in a plastic mass.
Mit diesem Verfahren wird ein Schaltungsmodul geschaffen, der hohen thermischen Belastungen ausgesetzt werden kann, ohne dass zerstörende oder beschädigende Thermospannungen zwischen dem Keramikmaterial und der Kunststoffgehäusemasse auftreten, da für ausreichende Dehnfugen durch das Trennen des Schaltungsträgers aus Keramik in einzelne Schaltungsträgerabschnitte gesorgt wurde. Diese Trenn- oder Dehnfugen werden durch die relativ elastischen, metallischen Bondverbindungen elektrisch überbrückt.With this method, a circuit module is created which can be exposed to high thermal loads without the occurrence of destructive or damaging thermal stresses between the ceramic material and the plastic housing mass, since sufficient expansion joints were provided by separating the ceramic circuit carrier into individual circuit carrier sections. These separating or expansion joints are electrically bridged by the relatively elastic, metallic bond connections.
Die elektronischen Bauteile können entweder auf entsprechend vorgesehene metallische Kontaktflächen eines Umverdrahtungs- leitungsmusters, das auf jedem Schaltungstragerabschnitt aufgebracht werden kann, aufgelötet werden oder an vorgegebenen Positionen auf einem Umverdrahtungsleitungsmuster mit Halbleiterchipinsel mittels elektrisch leitendem Klebstoff fixiert werden. Die Elektroden der elektronischen Bauteile kön- nen über Bondverbindungen mit diesem Umverdrahtungsleitungsmuster auf dem Schaltungstragerabschnitt anschließend verbunden werden. Dazu werden für Signal- und Datenleitungen relativ dünne Aluminiumbonddrähte eingesetzt, mit einem Durchmesser zwischen 25 und 100 μm, während für Versorgungsleitungen relativ 'dicke Aluminiumbonddrähte mit einem Durchmesser zwischen 100 und 750 μm zum Einsatz kommen. Die beim Anordnen der Schaltungstragerabschmtte entstehenden Trennfugen werden anschließend wiederum durch Bonden von Aluminiumdrahten mittels eines Wedge-Wedge-Ultraschallbondens bei Raumtemperatur elektrisch überbrückt.The electronic components can either be soldered onto correspondingly provided metallic contact areas of a rewiring line pattern that can be applied to each circuit carrier section, or can be fixed at predetermined positions on a rewiring line pattern with a semiconductor chip brush using an electrically conductive adhesive. The electrodes of the electronic components can then be bonded to this rewiring line pattern on the circuit carrier section. For this purpose, relatively thin aluminum bonding wires are used for signal and data lines microns with a diameter between 25 and 100, while power supply lines relatively "thick aluminum bonding wires microns with a diameter from 100 to 750 are used. The joints created when the circuit carrier is arranged are then again electrically bridged by bonding aluminum wires using a wedge-wedge ultrasonic bond at room temperature.
Noch vor dem Verpacken des in der Weise zu einem Multisubstratbaustein vorbereiteten Schaltungstragers mit elektronischen Bauteilen m einer Kunststoffmasse werden Außenflach- leiter eines Flachleiterrahmens an die einzelnen Schaltungs- tragerabschnitte herangeführt und mit Kontaktanschlußflachen des Umverdrahtungsleitungsmusters verbunden, so dass beim anschließenden Verpacken m einer Kunststoffgehäusemasse diese Flachleiter als Außenanschlusse aus der Kunststoffgehäusemasse herausragen, mindestens aber freiliegende Oberflachen zum Kontaktieren von Außen aufweisen.Even before the circuit carrier with electronic components in a plastic mass is prepared in the manner of a multisubstrate component, outer flat conductors of a flat conductor frame are brought up to the individual circuit carrier sections and connected to contact connection surfaces of the rewiring line pattern, so that during the subsequent packaging in a plastic housing mass, these flat conductors as Protrude external connections from the plastic housing mass, but at least have exposed surfaces for contacting from the outside.
Zusammenfassend kann festgestellt werden, dass das Problem der Durchbiegung eines Schaltungsmoduls, der im Wesentlichen aus einer Keramik- und einer Kunststoffgehausemasse aufgebaut ist, dadurch minimiert werden kann, dass der keramischeIn summary, it can be stated that the problem of the deflection of a circuit module, which is essentially composed of a ceramic and a plastic housing mass, can be minimized by the fact that the ceramic
Schaltungstrager eines derartigen Multi-Chip-Moduls m einzelne Schaltungstragerabschmtte getrennt ist. Damit wird eine unzulässig hohe Durchbiegung des Ξchaltungsmoduls verhindert und außerdem wird die Zuverlässigkeit erhöht, die bisher durch den Unterschied zwischen einem Keramikmaterial und einem Kunststoffmaterial beeinträchtigt war, weil hohe thermische Spannungen und damit mechanische Kräfte auftreten konnten.Circuit carrier of such a multi-chip module is separated m individual circuit carrier sections. This prevents an impermissibly high deflection of the circuit module and also increases the reliability, which was previously impaired by the difference between a ceramic material and a plastic material, because high thermal stresses and thus mechanical forces could occur.
Die absolute Flache jedes Schaltungstragerabschnitts ist er- fmdungsgemaß begrenzt, um die mechanischen Spannungen und damit die Durchbiegung m vertretbarem Rahmen zu halten, so dass diese nach Außen hm nicht wirksam werden und die War- meableitung von Verlustleistungen aufgrund von Durchbiegungen oder Delaminationen nicht behindert wird. Durch die Zertei- lung des Schaltungsträgers in mehrere kleine keramische Einzelsubstrate werden die mechanischen Spannungen deutlich re- duziert. Die Durchbiegung des Schaltungsmoduls durch Verwendung mehrerer Einzelsubstrate ist derart reduziert, dass sie mit bloßem Auge nicht mehr feststellbar ist.According to the invention, the absolute area of each circuit carrier section is limited in order to keep the mechanical stresses and thus the deflection in an acceptable frame, so that they do not take effect externally and the dissipation of power losses due to deflection or delamination is not hindered. The mechanical stresses are significantly reduced by dividing the circuit carrier into several small ceramic individual substrates. The deflection of the circuit module through the use of several individual substrates is reduced in such a way that it can no longer be ascertained with the naked eye.
Die Erfindung wird nun anhand von Ausführungsformen mit Bezug auf die beiliegenden Figuren naher erläutert.The invention will now be explained in more detail by means of embodiments with reference to the accompanying figures.
Figur 1 zeigt eine schematische Draufsicht auf ein Schaltungsmodul 1 einer ersten Ausführungsform der Erfindung,FIG. 1 shows a schematic top view of a circuit module 1 of a first embodiment of the invention,
Figur 2 zeigt einen schematischen Querschnitt durch das Schaltungsmodul 1 der ersten Ausführungsform der Erfindung entlang der Schnittlinie A-A der Figur 1,FIG. 2 shows a schematic cross section through the circuit module 1 of the first embodiment of the invention along the section line A-A of FIG. 1,
Figur 3 zeigt eine schematische Draufsicht auf ein Schaltungsmodul einer zweiten Ausführungsform der Erfindung.Figure 3 shows a schematic plan view of a circuit module of a second embodiment of the invention.
Figur 1 zeigt eine schematische Draufsicht auf ein Schal- tungsmodul 1 einer ersten Ausführungsform der Erfindung. Das Bezugszeichen 2 kennzeichnet elektronische Bauteile, die in dem Schaltungsmodul angeordnet sind. Das Bezugszeichen 3 kennzeichnet den Schaltungsträger aus Keramik, der in dieser Ausführungsform der Erfindung in drei Schaltungsträgerab- schnitte 5 aufgeteilt ist und die elektronischen Bauteile 2 trägt. Das Bezugszeichen 6 kennzeichnet Bondverbindungen zwischen den Schaltungsträgerabschnitten 5, um diese miteinander elektrisch zu verbinden. Das Bezugszeichen 8 kennzeichnet ei- ne Kunststoffmasse, die das Gehäuse 4 aus Kunststoff bildet, in der elektronische Bauteile 2 eingebettet sind.FIG. 1 shows a schematic top view of a circuit module 1 of a first embodiment of the invention. Reference number 2 denotes electronic components which are arranged in the circuit module. The reference symbol 3 denotes the circuit carrier made of ceramic, which in this embodiment of the invention is divided into three circuit carrier sections 5 and carries the electronic components 2. The reference numeral 6 denotes bond connections between the circuit carrier sections 5 in order to electrically connect them to one another. The reference symbol 8 denotes a ne plastic mass, which forms the housing 4 made of plastic, in which electronic components 2 are embedded.
Das Bezugszeichen 9 kennzeichnet Halbleiterchips, die zu den elektronischen Bauteilen 2 des hier gezeigten Schaltungsmoduls gehören. Das Bezugszeichen 10 kennzeichnet Leistungsdioden und das Bezugszeichen 11 Leistungstransistoren. Das Bezugszeichen 16 kennzeichnet Trennfugen zwischen den Schaltungsträgerabschnitten 5, die beim Anordnen mehrerer Schal- tungsträgerabschnitte 5 zu einem Schaltungsträger 3 auftreten. Das Bezugszeichen 17 kennzeichnet Aluminiumbonddrähte, welche die Bondverbindungen zwischen den einzelnen Schaltungsträgerabschnitten 5 gewährleisten und die Trennfugen überbrücken.The reference symbol 9 denotes semiconductor chips which belong to the electronic components 2 of the circuit module shown here. The reference number 10 denotes power diodes and the reference number 11 power transistors. The reference numeral 16 denotes separating joints between the circuit carrier sections 5, which occur when a plurality of circuit carrier sections 5 are arranged to form a circuit carrier 3. The reference numeral 17 designates aluminum bonding wires, which ensure the bonding connections between the individual circuit carrier sections 5 and bridge the joints.
An das in Figur 1 gezeigte Schaltungsmodul 1 werden Versorgungsleistungen über breite Außenflachleiter 18 herangeführt, die mit ihren inneren Flachleiterenden mit entsprechenden Kontaktanschlußflächen eines Umverdrahtungsleitungsmusters auf den Schaltungsträgerabschnitten 5 elektrisch verbunden sind. Zur Vereinfachung der Figur ist das Umverdrahtungslei- tungsmuster auf den Schaltungsträgerabschnitten 5 aus Keramik weggelassen. Über die Versorgungsflachleiter 18 werden die aktiven elektronischen Bauteile aus Dioden 10 und Lei- stungstransistoren 11 mit entsprechenden Strömen versorgt.Supply services are supplied to the circuit module 1 shown in FIG. 1 via wide outer flat conductors 18, which are electrically connected with their inner flat conductor ends to corresponding contact connection areas of a rewiring line pattern on the circuit carrier sections 5. To simplify the figure, the rewiring line pattern on the circuit carrier sections 5 made of ceramic is omitted. The active electronic components composed of diodes 10 and power transistors 11 are supplied with corresponding currents via the supply flat conductor 18.
Über die schmaleren Außenflachleiter 19 des in Figur 1 abgebildeten Schaltungsmoduls 1 werden Steuersignale und Daten an das Schaltungsmodul 1 geliefert.Control signals and data are supplied to the circuit module 1 via the narrower outer flat conductors 19 of the circuit module 1 shown in FIG.
Durch das Auftrennen des Schaltungsträgers 3 aus Keramik in drei Schaltungsträgerabschnitte 5 und einem anschließenden Verwinden der Schaltungsträgerabschnitte 5 über die Bondverbindungen 6 zu einem Multisubstratbaustein wird erreicht, dass sich der unterschiedliche thermische Ausdehnungskoef izient zwischen Keramik und Kunststoffmasse des Gehäuses nicht m der Weise auswirkt, dass eine wesentliche Durchbiegung des gesamten Bauelements auftritt. Dazu werden die Schaltungstra- gerabschnitte aus Keramik kleiner als 4 cm2 gehalten, so dass sich die thermischen Spannungen zwischen Keramiktragerab- schmtten 5 und Kunststoffgehäusemasse 8 m zulassigen Grenzen halten, ohne die Zuverlässigkeit des Schaltungsmoduls zu beeinträchtigen. Die Kunststoffgehäusemasse und das Kunst- stoffgehause wird lediglich im Umriss mit einer gestrichelten Linie m dieser Figur 1 angedeutet, um die Klarheit der Darstellung zu erhohen.By separating the circuit carrier 3 made of ceramic into three circuit carrier sections 5 and then twisting the circuit carrier sections 5 via the bond connections 6 to form a multi-substrate component, that the different coefficient of thermal expansion between the ceramic and the plastic mass of the housing does not have the effect that a substantial deflection of the entire component occurs. For this purpose, the circuit carrier sections made of ceramic are kept smaller than 4 cm 2 , so that the thermal stresses between ceramic carrier shield 5 and plastic housing mass 8 m remain within permissible limits without impairing the reliability of the circuit module. The plastic housing compound and the plastic housing are only indicated in outline with a dashed line m in this FIG. 1 in order to increase the clarity of the illustration.
Figur 2 zeigt einen schematischen Querschnitt durch das Schaltungsmodul 1 der ersten Ausfuhrungsform der Erfindung entlang der Schnittlinie A-A der Figur 1. Komponenten mit gleichen Funktionen wie m Figur werden mit gleichen Bezugszeichen gekennzeichnet und nicht extra erörtert.Figure 2 shows a schematic cross section through the circuit module 1 of the first embodiment of the invention along the section line A-A of Figure 1. Components with the same functions as m figure are identified by the same reference numerals and not discussed separately.
Die Kunststoffgehausemasse 8 schließt die drei in Figur 1 gezeigten keramischen Schaltungstragerabschmtte 5 ein, wobei auf den Tragerabschnitten 5 m diesem Querschnitt eine Leistungsdiode 10 und ein Leistungstransistor 11 auf jedem der Schaltungstragerabschmtte 5 zu sehen ist. Die Leistungsbau- elemente, das heißt die Diode 10 und der Leistungstransistor 11 sind über Bonddrahte 15 miteinander verbunden. Ferner ist die Ausgangselektrode 20 des Leistungstransistors 11 über einen weiteren Bonddraht 15 mit einer Umverdrahtungsleitung 21 verbunden, die ihrerseits eine Kontaktanschlußflache 22 bil- det, auf der ein entsprechend dicker Aluminiumbonddraht 17 die elektrische Verbindung zum benachbarten Schaltungstragerabschnitt 5 herstellt. Auf der linken Seite des Querschnitts des Schaltungsmoduls 1 ist ein Flachleiter 18 auf dem Schaltungsträger 3 befestigt, der seinerseits mit einer Kontaktanschlußfläche 22 elektrisch in Verbindung steht. Durch die Aufteilung des Schaltungsträ- gers 3 in drei Schaltungsträgerabschnitte 5 ist es gelungen, ein äußerst zuverlässiges Schaltungsmodul zu konstruieren, bei dem die thermischen Spannungen zwischen Kunststoffgehäusemasse 8 und keramischem Schaltungsträger 3 minimiert sind.The plastic housing compound 8 includes the three ceramic circuit carrier sections 5 shown in FIG. 1, a power diode 10 and a power transistor 11 being visible on each of the circuit carrier sections 5 on the carrier sections 5 m of this cross section. The power components, that is to say the diode 10 and the power transistor 11, are connected to one another via bonding wires 15. Furthermore, the output electrode 20 of the power transistor 11 is connected via a further bonding wire 15 to a rewiring line 21, which in turn forms a contact connection area 22 on which a correspondingly thick aluminum bonding wire 17 establishes the electrical connection to the adjacent circuit carrier section 5. On the left side of the cross section of the circuit module 1, a flat conductor 18 is fastened on the circuit carrier 3, which in turn is electrically connected to a contact connection area 22. By dividing the circuit carrier 3 into three circuit carrier sections 5, it has been possible to construct an extremely reliable circuit module in which the thermal stresses between the plastic housing compound 8 and the ceramic circuit carrier 3 are minimized.
Figur 3 zeigt eine schematische Draufsicht auf ein Schaltungsmodul 1 einer zweiten Ausführungsform der Erfindung. Komponenten mit gleichen Funktionen wie in den vorhergehenden Figuren werden mit gleichen Bezugszeichen gekennzeichnet und nicht extra erörtert.Figure 3 shows a schematic plan view of a circuit module 1 of a second embodiment of the invention. Components with the same functions as in the previous figures are identified by the same reference numerals and are not discussed separately.
Der Unterschied zwischen der ersten Ausführungsform der Erfindung und der zweiten Ausführungsform der Erfindung besteht lediglich darin, dass hier ein größerer Schaltungsträger 3 aus Keramik in sechs Schaltungsträgerabschnitte 5 aufgeteilt ist, die in Zeilen und Spalten zu einem rechteckigen Schaltungsmodul 1 angeordnet sind. Die Abstände oder Trennfugen 16 zwischen den einzelnen Schaltungsträgerabschnitten 5 werden in der Kunststoffgehäusemasse 8 durch entsprechende Bondverbindungen 6 aus einem Aluminiumdraht 18 überwunden. Durch die mechanische Trennung des großen Schaltungsträgers 3 in sechs kleine Schaltungsträgerabschnitte 5 wird erreicht, dass der Unterschied in den Wärmeausdehnungskoeffizienten zwischen Keramik und Kunststoff in vertretbaren Grenzen gehalten wird, so dass die Zuverlässigkeit eines derart großen Schaltungsmo- duls verbessert ist. Dazu werden für Versorgungsverbindungen 12 dickere Bonddrähte mit einem Durchmesser zwischen 100 μm und 750 μm herangezogen als für Signal- und Datenleitungen mit einem Durchmesser zwischen 18 μm und 100 μm. The only difference between the first embodiment of the invention and the second embodiment of the invention is that here a larger circuit carrier 3 made of ceramic is divided into six circuit carrier sections 5, which are arranged in rows and columns to form a rectangular circuit module 1. The distances or joints 16 between the individual circuit carrier sections 5 are overcome in the plastic housing compound 8 by means of corresponding bond connections 6 made of an aluminum wire 18. The mechanical separation of the large circuit carrier 3 into six small circuit carrier sections 5 ensures that the difference in the coefficient of thermal expansion between ceramic and plastic is kept within reasonable limits, so that the reliability of such a large circuit module is improved. For this purpose, 12 thicker bond wires with a diameter between 100 μm and 750 μm are used for supply connections than for signal and data lines with a diameter between 18 μm and 100 μm.

Claims

Patentansprüche claims
1. Schaltungsmodul mit mehreren elektronischen Bauteilen1. Circuit module with several electronic components
(2), wobei das Schaltungsmodul (1) einen Schaltungsträ- ger (3) aus Keramik und ein Gehäuse aus Kunststoff (4) aufweist, wobei der thermische Ausdehnungskoeffizient des Schaltungsträgers (3) kleiner ist, als der des Kunststoffgehäuses (4), in dem der Schaltungsträger (3) mit den elektronischen Bauteilen (2) verpackt ist, und wobei der Schaltungsträger (3) in mehrere Schaltungsträgerabschnitte (5) aufgetrennt ist, die über Bondverbindungen (6) in dem Kunststoffgehäuse (4) untereinander elektrisch verbunden sind.(2), the circuit module (1) having a circuit carrier (3) made of ceramic and a housing made of plastic (4), the thermal expansion coefficient of the circuit carrier (3) being smaller than that of the plastic housing (4), in which the circuit carrier (3) is packed with the electronic components (2), and wherein the circuit carrier (3) is separated into a plurality of circuit carrier sections (5) which are electrically connected to one another via bond connections (6) in the plastic housing (4).
2. Schaltungsmodul nach Anspruch 1, dadurch gekennzeichnet, dass die Schaltungsträgerabschnitte (5) eine Flächengröße von2. Circuit module according to claim 1, characterized in that the circuit carrier sections (5) have an area size of
4 cm2 nicht überschreitenDo not exceed 4 cm 2
3. Schaltungsmodul nach Anspruch 1 oder Anspruch 2, dadurch gekennzeichnet, dass die Schaltungsträgerabschnitte (5) in Zeilen und Spalten angeordnet sind.3. Circuit module according to claim 1 or claim 2, characterized in that the circuit carrier sections (5) are arranged in rows and columns.
4. Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schaltungsträgerabschnitte (5) einen Abstand (d) zwischen 1 mm und 5 mm voneinander aufweisen.4. Circuit module according to one of the preceding claims, characterized in that the circuit carrier sections (5) have a distance (d) between 1 mm and 5 mm from one another.
5. Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Rückseiten (7) der Schaltungsträgerabschnitte (5) aus der Kunststoffmasse (8) des Gehäuses (4) herausragen.5. Circuit module according to one of the preceding claims, characterized in that the rear sides (7) of the circuit carrier sections (5) protrude from the plastic mass (8) of the housing (4).
Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schaltungsträgerabschnitte (5) jeweils mindestens ein elektronisches Bauteil (2) aufweisen.Circuit module according to one of the preceding claims, characterized in that the circuit carrier sections (5) each have at least one electronic component (2).
Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die elektronischen Bauteile (2) Halbleiterchips (9) aufweisen.Circuit module according to one of the preceding claims, characterized in that the electronic components (2) have semiconductor chips (9).
Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die elektronischen Bauteile (2) Leistungsdioden (10) , Leistungstransistoren (11), Bipolarleistungstransistoren mit isoliertem Gate und/oder MOS-Leistungstransistoren aufweisen.Circuit module according to one of the preceding claims, characterized in that the electronic components (2) have power diodes (10), power transistors (11), bipolar power transistors with insulated gate and / or MOS power transistors.
Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schaltungsträgerabschnitte (5) passive Bauelemente und/oder Umverdrahtungsleitungen aufweisen.Circuit module according to one of the preceding claims, characterized in that the circuit carrier sections (5) have passive components and / or rewiring lines.
Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Bondverbindungen (6) zwischen den Schaltungsträgerabschnitten (5) für eine Signal- und/oder Datenübertra- gung einen Durchmesser zwischen 18 und 100 Mikrometern aufweisen und als Versorgungsverbindungen (12) einen Durchmesser zwischen 100 und 750 Mikrometern aufweisen. Schaltungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Bondverbindungen (6) einen Aluminiumbonddraht oder Kupferbonddraht aufweisen.Circuit module according to one of the preceding claims, characterized in that the bond connections (6) between the circuit carrier sections (5) for signal and / or data transmission have a diameter between 18 and 100 micrometers and as supply connections (12) have a diameter between 100 and have 750 microns. Circuit module according to one of the preceding claims, characterized in that the bond connections (6) have an aluminum bond wire or copper bond wire.
Verfahren zur Herstellung eines Schaltungsmoduls (1) mit mehreren elektronischen Bauteilen (2), das nachfolgende Verfahrensschritte aufweist:Method for producing a circuit module (1) with several electronic components (2), which has the following method steps:
Bestücken mehrerer Schaltungsträgerabschnitte (5) , die Kontaktanschlußflächen (22) für FlachleiterAssembling several circuit carrier sections (5), the contact pads (22) for flat conductors
(18, 19) und Bondverbindungen (6) eines Schaltungsmoduls (1) aufweisen, mit mehreren elektronischen Bauteilen (2) , Anordnen der bestückten Schaltungsträgerabschnitte (5) mit Trennfugen (16) zwischen den Schaltungsträgerabschnitten (5),(18, 19) and bond connections (6) of a circuit module (1), with several electronic components (2), arranging the assembled circuit carrier sections (5) with parting lines (16) between the circuit carrier sections (5),
Anbringen von Flachleitern (18, 19) eines Flachleiterrahmens auf entsprechende Kontaktanschlußflächen (22), - Verbinden der Schaltungsträgerabschnitte (5) unter¬ einander über Bondverbindungen (6) zwischen entsprechenden Kontaktanschlußflächen (22) zu einem Multisubstratbaustein, Verpacken des Multisubstratbausteins in einer Kunststoffmasse (8) zu einem Schaltungsmodul (1).Attaching flat conductors (18, 19) of a leadframe to corresponding contact pads (22), - connecting the circuit carrier portions (5) under ¬ one another via bond connections (6) between corresponding contact pads (22) to a multi-substrate chip, packaging of the multi-substrate chip into a plastic mass (8 ) to a circuit module (1).
Verfahren nach Anspruch 12, dadurch gekennzeichnet, dass elektronische Bauteile (2) auf vorgegebenen Positionen auf einem Umverdrahtungsleitungsmuster auf den Schaltungsträgerabschnitten (5) mittels elektrisch leitendem Klebstoff oder mittels Lot angeordnet werden. Verfahren nach Anspruch 12 oder Anspruch 13, dadurch gekennzeichnet, dass die elektronischen Bauteile (2) über Bonddrahtverbindungen (15) mit dem Umverdrahtungsleitungsmuster auf dem Schaltungsträger (3) verbunden werden.Method according to Claim 12, characterized in that electronic components (2) are arranged at predetermined positions on a rewiring line pattern on the circuit carrier sections (5) by means of electrically conductive adhesive or by means of solder. Method according to claim 12 or claim 13, characterized in that the electronic components (2) are connected to the rewiring line pattern on the circuit carrier (3) via bond wire connections (15).
Verfahren nach einem der Ansprüche 12 bis 14, dadurch gekennzeichnet, dass über Trennfugen (16) zwischen den Schaltungsträgerab- schnitten (5) hinweg Aluminiumbonddrähte (17) mittels eines Wedge-Wedge-Ultraschallbondes bei Raumtemperatur zwischen den Schaltungsträgerabschnitten (5) gebondet werden. Method according to one of claims 12 to 14, characterized in that aluminum bonding wires (17) are bonded between the circuit carrier sections (5) at room temperature via separating joints (16) between the circuit carrier sections (5) by means of a wedge-wedge ultrasound bond.
PCT/DE2003/000430 2002-02-18 2003-02-13 Circuit module and method for the production thereof WO2003071601A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10206817 2002-02-18
DE10206817.8 2002-02-18

Publications (2)

Publication Number Publication Date
WO2003071601A2 true WO2003071601A2 (en) 2003-08-28
WO2003071601A3 WO2003071601A3 (en) 2003-11-27

Family

ID=27740244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/000430 WO2003071601A2 (en) 2002-02-18 2003-02-13 Circuit module and method for the production thereof

Country Status (1)

Country Link
WO (1) WO2003071601A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004090977A1 (en) * 2003-04-09 2004-10-21 Ixys Semiconductor Gmbh Encapsulated power semiconductor assembly
DE102009044933A1 (en) * 2009-09-24 2011-04-07 Infineon Technologies Ag Power semiconductor module, has metal foil with section connected with carrier and connecting section spaced from carrier, where metal foil is electrical-conductively connected with another metal foil at connecting section
EP2525397A1 (en) * 2011-05-17 2012-11-21 IXYS Semiconductor GmbH Power semiconductor
DE102011080153A1 (en) * 2011-07-29 2013-01-31 Infineon Technologies Ag Power semiconductor module for use at outer wall of motor, has component or contact surface exhibiting direct connection with one substrate and arranged between respective substrates and metallization layer that is attached on substrates

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554613A (en) * 1983-10-31 1985-11-19 Kaufman Lance R Multiple substrate circuit package
US5075759A (en) * 1989-07-21 1991-12-24 Motorola, Inc. Surface mounting semiconductor device and method
US5332921A (en) * 1992-04-27 1994-07-26 Kabushiki Kaisha Toshiba Resin-seal type semiconductor device
DE19522173C1 (en) * 1995-06-19 1996-10-17 Eupec Gmbh & Co Kg Power semiconductor module
DE19707514A1 (en) * 1997-02-25 1998-08-27 Eupec Gmbh & Co Kg Semiconductor module
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
US6272015B1 (en) * 1997-11-24 2001-08-07 International Rectifier Corp. Power semiconductor module with insulation shell support for plural separate substrates
DE10125697A1 (en) * 2001-05-25 2002-12-05 Eupec Gmbh & Co Kg Power semiconductor module and method for producing a power semiconductor module
WO2003021680A2 (en) * 2001-09-01 2003-03-13 Eupec Gmbh Power semiconductor module

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554613A (en) * 1983-10-31 1985-11-19 Kaufman Lance R Multiple substrate circuit package
US5075759A (en) * 1989-07-21 1991-12-24 Motorola, Inc. Surface mounting semiconductor device and method
US5332921A (en) * 1992-04-27 1994-07-26 Kabushiki Kaisha Toshiba Resin-seal type semiconductor device
DE19522173C1 (en) * 1995-06-19 1996-10-17 Eupec Gmbh & Co Kg Power semiconductor module
DE19707514A1 (en) * 1997-02-25 1998-08-27 Eupec Gmbh & Co Kg Semiconductor module
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
US6272015B1 (en) * 1997-11-24 2001-08-07 International Rectifier Corp. Power semiconductor module with insulation shell support for plural separate substrates
DE10125697A1 (en) * 2001-05-25 2002-12-05 Eupec Gmbh & Co Kg Power semiconductor module and method for producing a power semiconductor module
WO2003021680A2 (en) * 2001-09-01 2003-03-13 Eupec Gmbh Power semiconductor module

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004090977A1 (en) * 2003-04-09 2004-10-21 Ixys Semiconductor Gmbh Encapsulated power semiconductor assembly
DE102009044933A1 (en) * 2009-09-24 2011-04-07 Infineon Technologies Ag Power semiconductor module, has metal foil with section connected with carrier and connecting section spaced from carrier, where metal foil is electrical-conductively connected with another metal foil at connecting section
DE102009044933B4 (en) 2009-09-24 2023-03-30 Infineon Technologies Ag Power semiconductor module with at least two connected circuit carriers and method for producing a power semiconductor module with at least two connected circuit carriers
EP2525397A1 (en) * 2011-05-17 2012-11-21 IXYS Semiconductor GmbH Power semiconductor
US9042103B2 (en) 2011-05-17 2015-05-26 Ixys Semiconductor Gmbh Power semiconductor module with asymmetrical lead spacing
EP2525397B1 (en) 2011-05-17 2015-10-21 IXYS Semiconductor GmbH Power semiconductor
US9210818B2 (en) 2011-05-17 2015-12-08 Ixys Semiconductor Gmbh Power semiconductor module with asymmetrical lead spacing
DE102011080153A1 (en) * 2011-07-29 2013-01-31 Infineon Technologies Ag Power semiconductor module for use at outer wall of motor, has component or contact surface exhibiting direct connection with one substrate and arranged between respective substrates and metallization layer that is attached on substrates

Also Published As

Publication number Publication date
WO2003071601A3 (en) 2003-11-27

Similar Documents

Publication Publication Date Title
EP0221399B1 (en) Semiconductor power module
EP1255299B1 (en) Power semiconductor device with pressure contact
EP0931346B1 (en) Microelectronic component with a sandwich design
DE112007001249B4 (en) Coolable semiconductor housing
DE102006037118B3 (en) Semiconductor switching module for vehicle electrical systems with a plurality of semiconductor chips, use of such a semiconductor switching module and method for producing the same
DE10033977B4 (en) Interconnect structure for using semiconductor chips on substrates
EP1450404B1 (en) Assembly in pressure contact with a power semiconductor module
DE19700963C2 (en) Method for producing a power module with an active semiconductor component and a circuit arrangement having passive semiconductor components
DE102015110653A1 (en) Double sided cooling chip package and method of making same
DE3616494A1 (en) INTEGRATED CIRCUIT BOX AND METHOD FOR PRODUCING AN INTEGRATED CIRCUIT BOX
WO1998015005A9 (en) Microelectronic component with a sandwich design
DE10142119B4 (en) Electronic component and method for its production
EP1378008A2 (en) Power module
DE112016007562B4 (en) semiconductor device
DE102007032775B4 (en) power amplifier
EP1192841A1 (en) Intelligent power module
DE102004041088A1 (en) Semiconductor component in flat conductor technology with a semiconductor chip
DE10205698A1 (en) Light-emitting diode has electrical wirings formed on surface of insulated cup for electrical connection to LED chip stored in insulated cup
DE10157362B4 (en) Power module and method for its production
WO2003071601A2 (en) Circuit module and method for the production thereof
DE19821916A1 (en) Packaged semiconductor device has a ball grid array substrate
DE10042839B4 (en) Electronic component with heat sink and method for its production
DE102013226989A1 (en) Semiconductor component with chip for the high-frequency range
DE102007002807B4 (en) chip system
DE102021122591A1 (en) MULTI-LAYER CONNECTING TAPE

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): BR CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP