WO2003073522A3 - Efficient light emitting diodes and laser diodes - Google Patents

Efficient light emitting diodes and laser diodes Download PDF

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Publication number
WO2003073522A3
WO2003073522A3 PCT/US2003/005566 US0305566W WO03073522A3 WO 2003073522 A3 WO2003073522 A3 WO 2003073522A3 US 0305566 W US0305566 W US 0305566W WO 03073522 A3 WO03073522 A3 WO 03073522A3
Authority
WO
WIPO (PCT)
Prior art keywords
diodes
light emitting
efficient light
laser
emitting diodes
Prior art date
Application number
PCT/US2003/005566
Other languages
French (fr)
Other versions
WO2003073522A2 (en
Inventor
Jagdish Narayan
Jinlin Ye
Schang-Jing Hon
Ken Fox
Jyh Chia Chen
Hong K Choi
John C C Fan
Original Assignee
Kopin Corp
Jagdish Narayan
Jinlin Ye
Schang-Jing Hon
Ken Fox
Jyh Chia Chen
Hong K Choi
John C C Fan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/083,703 external-priority patent/US20030160229A1/en
Application filed by Kopin Corp, Jagdish Narayan, Jinlin Ye, Schang-Jing Hon, Ken Fox, Jyh Chia Chen, Hong K Choi, John C C Fan filed Critical Kopin Corp
Priority to AU2003216391A priority Critical patent/AU2003216391A1/en
Publication of WO2003073522A2 publication Critical patent/WO2003073522A2/en
Publication of WO2003073522A3 publication Critical patent/WO2003073522A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices

Abstract

An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
PCT/US2003/005566 2002-02-25 2003-02-24 Efficient light emitting diodes and laser diodes WO2003073522A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003216391A AU2003216391A1 (en) 2002-02-25 2003-02-24 Efficient light emitting diodes and laser diodes

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/083,703 US20030160229A1 (en) 2002-02-25 2002-02-25 Efficient light emitting diodes and lasers
US10/083,703 2002-02-25
US10/207,649 2002-07-26
US10/207,649 US6881983B2 (en) 2002-02-25 2002-07-26 Efficient light emitting diodes and lasers

Publications (2)

Publication Number Publication Date
WO2003073522A2 WO2003073522A2 (en) 2003-09-04
WO2003073522A3 true WO2003073522A3 (en) 2004-06-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/005566 WO2003073522A2 (en) 2002-02-25 2003-02-24 Efficient light emitting diodes and laser diodes

Country Status (4)

Country Link
US (2) US6881983B2 (en)
AU (1) AU2003216391A1 (en)
TW (1) TW200304234A (en)
WO (1) WO2003073522A2 (en)

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JP2010263189A (en) * 2009-04-07 2010-11-18 Sharp Corp Nitride semiconductor light-emitting diode
US20110049469A1 (en) * 2009-09-03 2011-03-03 Rajaram Bhat Enhanced P-Contacts For Light Emitting Devices
WO2011084478A1 (en) * 2009-12-15 2011-07-14 Lehigh University Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
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CN103887382A (en) * 2014-04-02 2014-06-25 叶瑾琳 Efficient light-emitting diode and laser device
CN104064646A (en) * 2014-07-09 2014-09-24 天津三安光电有限公司 Light-emitting diode
WO2016069766A1 (en) * 2014-10-28 2016-05-06 The Regents Of The University Of California Flexible arrays of micro light emitting diodes using a photoelectrochemical (pec) liftoff technique
US20170236807A1 (en) * 2014-10-28 2017-08-17 The Regents Of The University Of California Iii-v micro-led arrays and methods for preparing the same
EP4082048A4 (en) * 2019-12-24 2024-02-28 Univ Michigan Regents Group iii-nitride excitonic heterostructures
CN114038958B (en) * 2021-08-05 2023-03-24 重庆康佳光电技术研究院有限公司 Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip

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