WO2003077037A1 - Refractive projection objective for immersion lithography - Google Patents

Refractive projection objective for immersion lithography Download PDF

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Publication number
WO2003077037A1
WO2003077037A1 PCT/EP2003/001954 EP0301954W WO03077037A1 WO 2003077037 A1 WO2003077037 A1 WO 2003077037A1 EP 0301954 W EP0301954 W EP 0301954W WO 03077037 A1 WO03077037 A1 WO 03077037A1
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WO
WIPO (PCT)
Prior art keywords
lens group
projection objective
lens
objective according
refracting power
Prior art date
Application number
PCT/EP2003/001954
Other languages
French (fr)
Inventor
Hans-Jürgen Rostalski
Wilhelm Ulrich
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Priority to EP03717197A priority Critical patent/EP1485760A1/en
Priority to JP2003575190A priority patent/JP2005519348A/en
Priority to AU2003221490A priority patent/AU2003221490A1/en
Priority to KR1020047014023A priority patent/KR100991590B1/en
Publication of WO2003077037A1 publication Critical patent/WO2003077037A1/en

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/24Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/14Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B9/00Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or -
    • G02B9/60Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or - having five components only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70241Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Definitions

  • the invention relates to a refractive projection objective for projecting a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium which is arranged between a last optical element of the projection objective and the image plane.
  • Photolithographic projection objectives have been in use for several decades for producing semiconductor components and other finely structured structural elements. They serve the purpose of projecting patterns of photomasks or reticles, which are also denoted below as masks or reticles, onto an object coated with a photosensitive layer with very high resolution on, a reducing scale.
  • DOF depth of focus
  • the optical system may not be suitable for use in the series production of semiconductors or the like.
  • Patent Specification US 5,610,683 (corresponding to EP 0 605 103) describes a projection exposure machine, provided for immersion lithography, having devices for introducing immersion fluid between the projection objective and the substrate. No design is specified for the optical projection system.
  • US Patent US 5,900,354 proposes using a super-critical fluid, for example xenon gas, as immersion medium in immersion lithography. No design is shown for a suitable projection objective.
  • a super-critical fluid for example xenon gas
  • This refracting power distribution produces a projection objective having two bellies and a waist therebetween, a good correction of the field curvature thereby being achieved.
  • the system aperture is seated in the region of greatest beam diameter of the belly next to the image plane, preferably at least 90% or 95% of the maximum beam diameter being present in the belly near the image at the location of the system aperture.
  • the system aperture can lie between a plane of maximum beam diameter near the image and the image plane, and thus in a region in which the transilluminated diameter of the objective already decreases towards the image plane. This is a substantial difference from conventional, refractive projection objectives in which the system aperture lies on the object side at a relatively large distance in front of the region of maximum beam diameter in the belly near the image.
  • the projection objective can advantageously be designed such that the space to be filled up by the immersion medium has an axial thickness which is so small that transmission losses in the immersion medium are no more than 10 to 20% of the penetrating light intensity. Consequently, image-side working distances of less than 200 ⁇ m, in particular less than 100 ⁇ m, are favourable. Since, on the other hand, touch contact between the last optical element and the substrate surface is to be avoided, a lower limit for the working distance of from 10 to 20 ⁇ m should not be undershot. Larger working distances in the region of one or more millimeters are also possible given suitably transparent immersion media.
  • Preferred projection objectives are distinguished by a number of favourable structural and optical features which are necessary alone or in combination for the suitability of the objective as an immersion objective.
  • a ratio between the focal length of the fourth lens group and the focal length of the fifth lens group is between approximately 0.9 and approximately 1.1. It can likewise be favourable when the focal lengths or refracting powers of the lens groups near the object and lens groups near the image are similar in magnitude.
  • a ratio of the magnitudes of the focal lengths of the first lens group and the fifth lens group can be between approximately 0.7 and approximately 1.3, preferably between approximately 0.9 and 1.1.
  • a ratio between the overall length of the projection objective and the focal length of the fifth lens group following the system aperture is greater than five, in particular greater than six, seven or even eight.
  • the axial distance between the object plane and image plane is denoted here as overall length.
  • the first lens group includes at least one aspheric surface.
  • a plurality of aspherics for example two, to be provided here.
  • Aspherics in this region make a particularly effective contribution to the correction of distortion and astigmatism.
  • the third lens group, situated in the region of the waist has at least one aspheric surface, a plurality of aspherics, for example two aspherics, being preferred.
  • at least one aspheric is provided in each lens group in order to facilitate fine setting of the correction state of the projection objective.
  • the number of aspherics should be limited, for example to less than nine or less than seven, as in the case of a preferred embodiment.
  • the favourable projection properties of projection objectives according to the invention are promoted by some special features relating to the type and arrangement of the lenses used.
  • at least one meniscus lens, convex relative to the object plane, with a negative refracting power is arranged in the near zone of the object plane, in particular in the first lens group.
  • This lens which can form the third lens of the objective, for example, favours the correction of tangential astigmatism.
  • the second lens group preferably has at least one, in particular a plurality of meniscus lenses, concave relative to the object plane, with a positive refracting power on its side facing the object plane.
  • At least one biconcave positive lens is favourably situated between the menisci or meniscus groups of the opposing bending.
  • a sequence of at least one positive meniscus lens, concave relative to the object plane, a biconvex positive lens and at least one positive meniscus lens, concave relative to the image plane can be formed in the second lens group.
  • This sequence of lenses in the region of relatively large beam diameter of the first belly is favourable for a strong "deformation" of the main ray in this region in conjunction with low areal stresses of the optical surfaces.
  • incidence angle is the angle between the impingement direction of a ray on an optical surface and the surface normal of the optical surface at the impingement point of the ray.
  • At least one doublet with a biconvex positive lens and a meniscus- shaped negative lens, following towards the image, with lens surfaces which are concave towards the object is preferably provided in the region directly upstream of the system aperture, that is to say in the fourth lens group.
  • a positive air lens, convex relative to the image plane, is respectively arranged between the lenses of the doublet.
  • Such doublets composed of a collecting biconvex lens and a diverging meniscus have a positive effect on the correction state and can counteract the aberrations which are introduced by lenses with a strong, positive diffracting power downstream of the system aperture.
  • the fifth lens group has exclusively positive lenses. It is possible, for example, to arrange four or more positive lenses between aperture stop and image plane. In this case, favourable surface loads can be achieved whenever at least one meniscus lens, concave towards the image, with a positive refracting power is provided in the fifth lens group. In particular, two or more such lenses can be provided.
  • the last optical element is preferably formed by a plano-convex lens which preferably has a spherical entry surface and a substantially flat exit surface. It is possible thereby, on the one hand, to achieve a good correction of spherical aberration and coma and, on the other hand, a substantially flat exit surface is favourable for immersion lithography.
  • the plano-convex lens is nonhemispherical, the centre of the spherical surface lying outside the lens. Truncated hemispherical lenses of this type can yield a reduced sensitivity to fluctuations in the working distance.
  • all the lenses of the projection objective consist of the same material.
  • synthetic quartz glass and, for operating wavelengths of 157 nm calcium fluoride can be used, for example, as material.
  • the use of only one kind of material facilitates production and permits simple adaptation of the objective design to other wavelengths. It is also possible to combine a plurality of kinds of material in order, for example, to support the correction of chromatic aberrations. It is also possible to use other UV-transparent materials such as BaF 2 , NaF, LiF, SrF, MgF 2 or the like.
  • Figure 1 shows a lens section through a first embodiment of a refractive projection objective which is designed for a 193 nm operating wavelength
  • Figure 2 shows a lens section through a second embodiment of a projection objective which is designed for a 193 nm operating wavelength
  • Figure 3 shows a lens section through a third embodiment of a projection objective which is designed for a 157 nm operating wavelength
  • Figure 4 shows a lens section through a fourth embodiment of a projection objective which is designed for a 193 nm operating wavelength.
  • optical axis denotes a straight line through the centres of curvature of the optical components. Directions and distances are described as on the image side or towards the image when they are aligned in the direction of the image plane or the substrate, which is to be exposed, located there, and as on the object side or towards the object when they are directed towards the object with reference to the optical axis.
  • the object is a mask (reticle) with the pattern of an integrated circuit, but it can also be another pattern, for example a grating.
  • the image is formed on a wafer which serves as a substrate and is provided with a photoresist layer, but other substrates are also possible for example elements for liquid crystal displays or substrates for optical gratings.
  • the focal lengths specified are focal lengths with reference to air.
  • FIG. 1 A typical design of an embodiment of a purely refractive reduction objective 1 according to the invention is shown with the aid of Figure 1. It serves the purpose of projecting in conjunction with virtually homogeneous immersion a pattern, arranged in an object plane 2, of a reticle or the like into an image plane 3 to a reduced scale, for example to the scale of 5:1.
  • This is a rotationally symmetrical single-waist system with five lens groups which are arranged along the optical axis 4, which is perpendicular to the object plane and image plane, and form an object-side belly 6, an image-side belly 8 and a waist 7 situated therebetween.
  • the first lens group LG1 following the image plane 2, has a negative refracting power and a focal length of -166 mm.
  • a second lens group LG2, following thereupon, has a positive refracting power with a focal length of 121 mm.
  • a third lens group LG3, following thereupon, has a negative refracting power and a focal length of - 33 mm.
  • a fourth lens group LG4, following thereupon, has a positive refracting power with a focal length of 166 mm, which therefore corresponds in terms of magnitude to the focal length of the first lens group.
  • a fifth lens group LG5, following thereupon, has a positive refracting power and a focal length of 170 mm, which is of the order of magnitude of the focal length of the fourth lens group and of the first lens group LG1 in terms of magnitude.
  • the system aperture 5 is arranged between the fourth lens group LG4 and the fifth lens group LG5 in the region, near the image, of maximum beam diameter, that is to say in the second belly 8 of the objective.
  • the first lens group LG1 is substantially responsible for the expansion of the light bundle into the first belly 6. It comprises three lenses 11 , 12, 13 with a negative refracting power, the first lens 1 1 and the second lens 12 being configured as biconvex negative lenses.
  • the third lens 13 is a diverging meniscus in the case of which as a special feature the concave side is directed not towards the object 2 but towards the image plane 3. This arrangement is very favourable for correcting the tangential astigmatism.
  • the first lens group includes two aspherics, specifically the entry sides of the second and the third lens. The aspherics have a positive influence on the very good correction of the distortion and the astigmatism.
  • the second lens group LG2 comprises four collecting menisci 14, 15, 16, 17, facing the reticle or the object plane 2 with their concave side, a biconvex positive lens 18 and two collecting menisci 19, 20 facing the wafer or the image plane 3 with their concave side.
  • This design in which the curvatures of the meniscus surfaces run on the object side and image side of the biconvex lens 18 in opposite directions with concave surfaces averted from one another, ensures small areal stresses for the menisci and the positive lens 18, and thus few aberrations.
  • the biconcave air lens between the biconvex positive lens 18 and the following meniscus lens 19 has with its strong astigmatic undercorrection a favourable influence on the balancing-out of the astigmatism in the front part of the system upstream of the waist 7.
  • the third lens group LG3 consists exclusively of diverging lenses, specifically a negative meniscus lens 21 with image-side concave surfaces, a biconcave negative lens 22, following thereupon, a further biconcave negative lens, following thereupon, and a negative meniscus lens 24, following thereupon, with object-side concave surfaces.
  • these four lenses are designed with mirror symmetry with regard to lens type (meniscus lens or biconcave lens) and direction of curvature of the optical surfaces.
  • the third lens group includes, in the form of the exit surface of the smallest lens 22 and the exit surface of the negative meniscus lens 24, two aspherics which make a substantial contribution to the correction of the coma and the astigmatism.
  • the fourth lens group LG4 comprises on its entry side two positive meniscus lenses 25, 26 which are concave relative to the object plane and are followed by two doublets 27, 28 and 29, 30.
  • Each of the doublets has, on the object side, a collecting biconvex lens 27 and 29, respectively, and downstream thereof a diverging meniscus 28 and 30, respectively, whose concave surfaces point towards the object plane.
  • the combination of the collecting biconvex lens and the diverging meniscus inside a doublet has a very positive effect on the correction of image errors in the region of the second belly 8.
  • the two menisci 28, 30, in particular the thick meniscus 28 counteract the undercorrection in the fifth lens group LG5.
  • the fifth lens group LG5, situated downstream of the system aperture 5, is substantially responsible for producing the high numerical aperture.
  • Provided for this purpose are exclusively collecting lenses, specifically a positive meniscus lens 31 , arranged in the region of the system aperture 5, with surfaces concave towards the image, a biconvex positive lens 32, following thereupon, with a slightly curved entry side and a more strongly curved exit side, a positive meniscus lens 23, following thereupon, with surfaces concave towards the image, a further positive meniscus lens 24, likewise with surfaces concave towards the image, and a terminating plano-convex lens 35 with a spherical entry side and a flat exit side.
  • the positive lenses 31 , 32, 33 and 34 are strongly undercorrected spherically and overcorrected with reference to the coma.
  • the correction of the spherical aberration and the coma is therefore implemented substantially in conjunction with the configuration of the fourth lens group LG4 which is situated upstream of the system aperture 5 and creates a corresponding offset of these aberrations.
  • the fourth lens group LG4 and the fifth lens group LG5 are responsible in combination for achieving a good correction state of the spherical aberration and of coma.
  • An aspheric surface on the entry side of the biconvex lens 27 of the first doublet substantially supports the correction of the spherical aberration, but also of the coma of third order.
  • An aspheric surface, arranged in the vicinity of the system aperture 5, on the exit side of the positive meniscus lens 31 , convex towards the object, at the input of the fifth lens group LG5 chiefly corrects aberrations of higher order and thereby makes a substantial contribution to setting a good aberration compromise.
  • a likewise positive influence on the correction of aperture aberration and coma is exerted by the spherical, convex entry surface of the plano-convex lens 35.
  • the latter is spherically overcorrected and undercorrected with reference to coma.
  • the system has a working distance on the image side of approximately 8.4 mm, which can be filled up by an immersion fluid 10.
  • the correction state of the optical system 1 is excellent. All aberrations are corrected.
  • the RMS value of the wavefront deformation is very low at 4 m ⁇ .
  • the distortion of all field points in the region is below 1 nm.
  • a projection objective is thus created which operates at an operating wavelength of 193 nm, can be produced with the aid of conventional techniques for lens production and coating, and permits a resolution of structures substantially below 100 nm.
  • Table 1 gives the number of a refracting surface, or one distinguished in another way
  • column 2 gives the radius r of the surface (in mm)
  • column 3 gives the distance d denoted as thickness, of the surface from the following surface (in mm)
  • column 4 gives the material of the optical components
  • column 5 gives the refractive index of the material of the component, which follows the entry surface.
  • the useful, free radii or half the free diameter of the lenses (in mm) are specified in column 6.
  • the image-side numerical aperture is 1.1.
  • the objective has an overall length (distance between image plane and object plane) of 1 162 mm.
  • a light conductance (product of numerical aperture and image size, also denoted etendue or geometrical flux) of 24.1 mm is achieved given an image size of 22 mm.
  • FIG. 1 A variant of the projection objective shown in Figure 1 is explained with the aid of Figure 2.
  • Lenses or lens groups of the same type or the same function are denoted by the same reference symbols for reasons of clarity.
  • PFPE perfluoropolyether
  • the fourth and the fifth lens group differ in terms of design from that in accordance with Figure 1.
  • the thick meniscus lens 28 of the first doublet in Figure 1 is split up into an object-side, biconcave negative lens 28' with an only slightly curved exit side and a subsequent biconvex positive lens 28" with a correspondingly only slightly curved entry side.
  • This splitting-up further reduces the areal stress of the optical surfaces in this region.
  • the rim ray of the projection runs in a converging fashion in the air space between the subsequent lenses 29, 30 upstream of the entry surface of the meniscus 30 which is concave towards the object.
  • the entry-side lenses 31 , 32, separated in the case of the design in Figure 1 and downstream of the system aperture 5 are combined to form a single, biconvex positive lens 32'.
  • This is situated at a distance downstream of the system aperture 5, which can be accessed particularly easily.
  • a further special feature consists in that the system aperture 5 is situated between a plane, near the image, of maximum beam diameter and the image plane 3, that is to say where the transilluminated diameter of the lenses already decreases towards the image plane.
  • the other lenses correspond with regard to the type and sequence of the lenses of identical reference symbols in Figure 1. In the case of this design, as well, all the lenses consist of synthetic quartz glass. The specification of this design in the notation described is specified in Tables 3 and 4.
  • FIG. 3 Shown in Figure 3 is a third embodiment, designed for an operating wavelength of 157 nm, of a projection objective 1" whose specification is given in Tables 5 and 6. It is to be seen from the sequence and the type of lenses that the design is based on the design principle explained with the aid of Figures 1 and 2, and so the same reference symbols are used for lenses and lens groups with corresponding functions. As in the case of the embodiment in accordance with Figure 1 , no further optical element is arranged upstream of the first biconcave negative lenses 1 1 of the objective.
  • the thick meniscus lens 28, still in one piece in Figure 1 is split up into a biconcave negative lens 28' and a directly following biconvex positive lens 28".
  • the function of the entry-side lenses 31 , 32 of the embodiment in accordance with Figure 1 is taken over by a single, biconvex positive lens 32' which initiates the ray combination towards the image plane.
  • the system aperture 5 is situated inside the second belly 8 downstream of the region of maximum beam diameter, that is to say where the beam diameter already decreases again towards the image plane.
  • the image-side working distance is set to approximately 50 ⁇ m, which corresponds in practical use to the thickness of the immersion layer. It may be assumed that suitable immersion fluids still have high transmission values of more than 90% in the case of this low thickness, and so only negligible, low transmission losses occur in the region of the immersion, this being favourable for achieving a satisfactory wafer throughput. Pattern widths of less than 70 nm can be resolved with the aid of this purely refractive projection objective, of excellent correction state, which can be implemented using conventional means.
  • Tables 7 and 8 show the specification of an embodiment (not illustrated pictorially) of a projection objective which is derived from the embodiment in accordance with Figure 3, from which it differs essentially in that the thick meniscus lens 17, concave towards the object, there is replaced by a thinner meniscus lens curved in the same direction.
  • a comparison of Tables 5 and 6 shows that as a result an even more compact design is possible which has smaller lens diameters and a smaller overall length in conjunction with equally good optical properties.
  • a fourth embodiment of a projection objective 1' which is designed for an operating wavelength of 193 nm and whose specification is given in Tables 9 and 10 is shown in Figure 4.
  • NA 0.9.
  • a comparison with the remaining embodiments shows that less lens material is required in conjunction with the same fundamental optical principle. Instead of 25, as in the case of the other embodiments, there is a need for only 23 lenses, and moreover the average and maximum lens diameters are smaller than with the preceding embodiments.
  • the fourth lens group LG4 In contrast to the other embodiments, in the fourth lens group LG4 only one doublet 27 and 28 is provided, and so a saving of one lens is made in this lens group as well.
  • the symmetrical design of the third lens group LG3 and of the lens pairs bordering thereon, 19, 20, of the second lens group and 25, 26 of the fourth lens group corresponds to that of the other embodiments.
  • the embodiment in accordance with Figure 4 substantiates that it is also possible to implement solutions of favourable design within the scope of the invention for relatively large projection scales and relatively large fields.
  • the correction state of all the embodiments shown is excellent. All aberrations are corrected.
  • the maximum RMS value of the wavefront deformation is very low and is below 4.5 m ⁇ for the embodiments in accordance with Figures 1 and 2, below 6.5 m ⁇ for the embodiment in accordance with Tables 7 and 8, and below 5.2 m ⁇ for the embodiment in accordance with Figure 4.
  • the distortion is in the region below 1 nm for all field points.
  • individual lenses can be split up into two or more separate lenses, or separate lenses can be combined to form a single lens having essentially the same function.
  • Catadioptric systems for immersion lithography can also be designed using essential configuration features of the embodiments represented here, in particular in the region, near the image, of the second belly and the aperture stop.
  • two or more collecting menisci with an object-side concave surface are favourable in the entry region of the second lens group, and two or more collecting menisci with surfaces concave towards the image are favourable at the end of the second lens group.
  • a strong beam expansion is beneficial for which the maximum beam diameter is preferably more than 1.8 times, in particular more than 2 times the object field diameter.
  • the maximum lens diameter in the second lens group can be approximately twice the minimum free lens diameter of the third lens group in the region of the constriction.
  • the maximum lens diameter in the second belly following the constriction is preferably of the same order of magnitude and can, in particular, be greater than twice the minimum free diameter in the third lens group.
  • two concave surfaces are preferably directly opposite one another and are enclosed by two surfaces curved in the same sense.
  • the lenses respectively adjoining towards the object and towards the image are also preferably designed and arranged in this way.
  • Particular lens distributions can be favourable.
  • the number of lenses upstream of the aperture is preferably at least four times, in particular more than five times, the number of lenses downstream of the system aperture.
  • Five or more collecting lenses are preferably arranged between the region of narrowest constriction and the system aperture or aperture stop; the axial distance between the region of narrowest constriction and the aperture stop arranged exceptionally near the image is favourably at least 26%, if appropriate more than 30% or 35%, of the overall length of the projection objectives.
  • principal ray is a ray which runs from a rim point of the object field parallel or at an acute angle to the optical axis and which cuts the optical axis in the region of the system aperture.
  • a rim ray in the sense of the present application leads from the middle of the object field to the rim of the aperture stop.
  • the perpendicular distance of these rays from the optical axis yields the corresponding ray height. It can be favourable when the principle ray height is greater in absolute value up to the end of the second lens group than the rim ray height, this relationship preferably not being reversed until in the region of the third lens group.
  • the maximum rim ray height is preferably more than twice, in particular more than 2.3 to 2.5 times, the rim ray height in the region of the narrowest constriction of the third lens group. It is favourable when the diameter of the rim ray is kept small in the region between the fourth and fifth lens groups, that is to say in the region of the system aperture. This corresponds to a smallest possible focal length of the fifth lens group, following the system aperture.
  • the focal length of the fifth lens group is preferably smaller than 15%, in particular smaller than 10% of the overall length.
  • Preferred systems are doubly telecentric, and so the principal ray is substantially perpendicular both to the object plane and to the image plane.
  • the principal ray coming from the object field should still have a divergent trajectory after at least five lenses, that is to say a trajectory with a still rising principal ray height away from the optical axis. It is favourable, furthermore, when the sine of the maximum principal ray divergence angle in the objective region near the object is more than 50% of the object-side numerical aperture.
  • a plurality of aspheric surfaces are preferably provided in the region near the object in which the rim ray height is greater than the principal ray height, in order to promote a favourable correction state.
  • the invention also relates to a projection exposure machine for microlithography which is distinguished in that it includes a refractive projection objective in accordance with the invention.
  • the projection exposure machine preferably also has devices intended for introducing and keeping an immersion medium, for example a liquid of suitable refractive index, between the last optical surface of the projection objective and the substrate to be exposed.
  • an immersion medium for example a liquid of suitable refractive index
  • Also covered is a method for producing semiconductor components and other finely structured structural elements, in the case of which an image of a pattern arranged in the object plane of a projection objective is projected in the region of the image plane, an immersion medium arranged between the projection objective and the substrate to be exposed and transparent to light at the operating wavelength being transilluminated. Table 1
  • Ci 1 38SS0354 ⁇ -C20

Abstract

A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with a negative refracting power, a second lens group with a positive refracting power, a third lens group with a negative refracting power, a fourth lens group with a positive refracting power and a fifth lens group with a positive refracting power are provided. The system aperture is in the region of maximum beam diameter between the fourth and the fifth lens group. Embodiments of projection objectives according to the invention achieve a very high numerical aperture of NA > 1 in conjunction with a large image field, and are distinguished by a good optical correction state and moderate overall size. Pattern widths substantially below 100 nm can be resolved when immersion fluids are used between the projection objective and substrate in the case of operating wavelengths below 200 nm.

Description

Description Refractive projection objective for immersion lithography
The invention relates to a refractive projection objective for projecting a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium which is arranged between a last optical element of the projection objective and the image plane.
Photolithographic projection objectives have been in use for several decades for producing semiconductor components and other finely structured structural elements. They serve the purpose of projecting patterns of photomasks or reticles, which are also denoted below as masks or reticles, onto an object coated with a photosensitive layer with very high resolution on, a reducing scale.
Three developments running in parallel chiefly contribute to the production of every finer structures of the order of magnitude of 100 nm or below. Firstly, an attempt is being made to increase the image-side numerical aperture (NA) of the projection objective beyond the currently customary values into the region of NA=0.8 or above. Secondly, ever shorter wavelengths of ultraviolet light are being used, preferably wavelengths of less than 260 nm, for example 248 nm, 193 nm, 157 nm or below. Finally, still other measures are being used to increase resolution, for example phase-shifting masks and/or oblique illumination.
In addition, there are already approaches to improving the achievable resolution by introducing an immersion medium of high refractive index into the space between the last optical element of the projection objective and the substrate. This technique is denoted here as immersion lithography. Introducing the immersion medium yields an effective wavelength of
Figure imgf000004_0001
λ0 being the vacuum operating wavelength and n the refractive index of the immersion medium. This yields a resolution of
Figure imgf000004_0002
and a depth of focus (DOF) of
Figure imgf000004_0003
NAo = sin Θo being the "dry" numerical aperture, and Θ0 being half the aperture angle of the objective. The empirical constants ki and k2 depend on the process.
The theoretical advantages of immersion lithography reside in the reduction of the effective operating wavelength and the resolution improved thereby. This can be achieved in conjunction with an unchanged vacuum wavelength, and so established techniques for producing light for selecting optical materials, for coating technology etc. can be adopted largely without change for the appropriate wavelength. However, measures are required for providing projection objectives with very high numerical apertures in the region of NA = 1 or above. Furthermore, suitable immersion media must be available.
The article entitled "Immersion Lithography at 157 nm" by M. Switkes and M. Rothschild, J. Vac. Sci. Technol. Vol. 19 (6), Nov./Dec. 2001 , pages 1 ff. presents immersion fluids based on perfluoropolyethers (PFPE) which are sufficiently transparent for a working wavelength of 157 nm and are compatible with some photoresist materials currently being used in microlithography. One tested immersion fluid has a refractive index of n = 1.37 at 157 nm. The publication also describes a lens-free optical system, operating with calcium fluoride elements and silicon mirrors, for immersion interference lithography, which is intended to permit the projection of 60 nm structures and below in conjunction with a numerical aperture of NA = 0.86. The optical system may not be suitable for use in the series production of semiconductors or the like.
Patent Specification US 5,610,683 (corresponding to EP 0 605 103) describes a projection exposure machine, provided for immersion lithography, having devices for introducing immersion fluid between the projection objective and the substrate. No design is specified for the optical projection system.
US Patent US 5,900,354 proposes using a super-critical fluid, for example xenon gas, as immersion medium in immersion lithography. No design is shown for a suitable projection objective.
It is the object of the invention to create a refractive projection objective which is suitable for immersion lithography and which has, in conjunction with a moderate overall size, a high numerical aperture suitable for immersion lithography, an image field which is sufficiently large for practical use in wafer steppers or wafer scanners, and a good correction state.
This object is achieved by means of a projection objective having the features of Claim 1. Advantageous embodiments are specified in the dependent claims. The wording of all the claims is incorporated in the description by reference.
In accordance with one aspect of the invention, a refractive projection objective for projecting a pattern arranged in an object plane of the projection objective into the image plane of the projection objective with the aid of an immersion medium which is arranged between a last optical element of the projection objective and the image plane has a first lens group, following the image plane, with a negative refracting power; a second lens group, following thereupon, with a positive refracting power; a third lens group, following thereupon, with a negative refracting power; a fourth lens group, following thereupon, with a positive refracting power; a fifth lens group, following thereupon, with a positive refracting power; and a system aperture which is arranged in the region of maximum beam diameter between the fourth lens group and the fifth lens group.
This refracting power distribution produces a projection objective having two bellies and a waist therebetween, a good correction of the field curvature thereby being achieved. The system aperture is seated in the region of greatest beam diameter of the belly next to the image plane, preferably at least 90% or 95% of the maximum beam diameter being present in the belly near the image at the location of the system aperture. In certain embodiments, the system aperture can lie between a plane of maximum beam diameter near the image and the image plane, and thus in a region in which the transilluminated diameter of the objective already decreases towards the image plane. This is a substantial difference from conventional, refractive projection objectives in which the system aperture lies on the object side at a relatively large distance in front of the region of maximum beam diameter in the belly near the image.
The design permits image-side numerical apertures NA > 0.9, it being possible in the case of preferred embodiments to achieve NA = 1.1 or above. Preferred projection objectives are adapted to an immersion fluid which has a refractive index of n > 1.3 at the operating wavelength. As a result, a reduction in the effective operating wavelength by 30% or more can be achieved by a comparison with systems without immersion.
The projection objective can advantageously be designed such that the space to be filled up by the immersion medium has an axial thickness which is so small that transmission losses in the immersion medium are no more than 10 to 20% of the penetrating light intensity. Consequently, image-side working distances of less than 200 μm, in particular less than 100 μm, are favourable. Since, on the other hand, touch contact between the last optical element and the substrate surface is to be avoided, a lower limit for the working distance of from 10 to 20 μm should not be undershot. Larger working distances in the region of one or more millimeters are also possible given suitably transparent immersion media.
Preferred projection objectives are distinguished by a number of favourable structural and optical features which are necessary alone or in combination for the suitability of the objective as an immersion objective.
For example, it can be favourable when the refracting powers of the lens groups are of the same order of magnitude on both sides of the system aperture. In particular, it can be provided that a ratio between the focal length of the fourth lens group and the focal length of the fifth lens group is between approximately 0.9 and approximately 1.1. It can likewise be favourable when the focal lengths or refracting powers of the lens groups near the object and lens groups near the image are similar in magnitude. In particular, a ratio of the magnitudes of the focal lengths of the first lens group and the fifth lens group can be between approximately 0.7 and approximately 1.3, preferably between approximately 0.9 and 1.1. Furthermore, it can be favourable for producing a high image-side numerical aperture when a strong positive refracting power is concentrated in the region near the image. In preferred embodiments, a ratio between the overall length of the projection objective and the focal length of the fifth lens group following the system aperture is greater than five, in particular greater than six, seven or even eight. The axial distance between the object plane and image plane is denoted here as overall length.
In order to achieve a good correction state, it is provided in preferred embodiments that the first lens group includes at least one aspheric surface. Favourably, it is even possible for a plurality of aspherics, for example two, to be provided here. Aspherics in this region make a particularly effective contribution to the correction of distortion and astigmatism. It is favourable, furthermore, for the correction of coma and astigmatism when the third lens group, situated in the region of the waist, has at least one aspheric surface, a plurality of aspherics, for example two aspherics, being preferred. In the case of preferred embodiments, at least one aspheric is provided in each lens group in order to facilitate fine setting of the correction state of the projection objective. With regard to simple production of the lenses, the number of aspherics should be limited, for example to less than nine or less than seven, as in the case of a preferred embodiment.
The favourable projection properties of projection objectives according to the invention, particularly the good correction state in the case of a very high numerical aperture, are promoted by some special features relating to the type and arrangement of the lenses used. For example, it is favourable when at least one meniscus lens, convex relative to the object plane, with a negative refracting power is arranged in the near zone of the object plane, in particular in the first lens group. This lens, which can form the third lens of the objective, for example, favours the correction of tangential astigmatism. The second lens group preferably has at least one, in particular a plurality of meniscus lenses, concave relative to the object plane, with a positive refracting power on its side facing the object plane. These preferably combine with at least one, preferably a plurality of meniscus lenses, convex relative to the object plane, with a positive refracting power on the side, facing the image plane, of the second lens group. At least one biconcave positive lens is favourably situated between the menisci or meniscus groups of the opposing bending. As a result, a sequence of at least one positive meniscus lens, concave relative to the object plane, a biconvex positive lens and at least one positive meniscus lens, concave relative to the image plane, can be formed in the second lens group. This sequence of lenses in the region of relatively large beam diameter of the first belly is favourable for a strong "deformation" of the main ray in this region in conjunction with low areal stresses of the optical surfaces. This is favourable for low total aberrations of the projection objective. A favourable areal stress in the sense of this application occurs whenever the incidence angles of the rays striking an optical surface are as small as possible and do not overshoot a critical limit value. Denoted here as incidence angle is the angle between the impingement direction of a ray on an optical surface and the surface normal of the optical surface at the impingement point of the ray. The smaller the incidence angle and, correspondingly, the lower the areal stress, the easier is the development of suitable antireflection coatings, and the greater is the tolerance of the design to the adjustment.
The region of narrowest constriction of the ray is denoted as the waist. The third lens group in the region of the waist has the task of re- expanding the radiation, converging downstream of the first belly, with as few aberrations as possible. It is favourable for this purpose when the third lens group has only lenses with a negative refracting power. It has proved to be particularly advantageous when, with reference to a plane of symmetry lying inside the third lens group, the third lens group is of substantially symmetrical construction. This is distinguished, in particular, by virtue of the fact that mutually assigned lenses of the same type are arranged on the object side and image side of the plane of symmetry. The symmetry of the lens types preferably also extends into the bordering region of the second and fourth lens groups such that an exit region, facing the third lens group, of the second lens group, and an entry region, following the third lens group, of the fourth lens group can be constructed substantially symmetrically relative to the plane of symmetry lying inside the third lens group. A symmetrical arrangement of negative and positive meniscus lenses will be explained in further detail in conjunction with the embodiments. The symmetry promotes a low areal stress of the lenses in conjunction with few aberrations.
At least one doublet with a biconvex positive lens and a meniscus- shaped negative lens, following towards the image, with lens surfaces which are concave towards the object is preferably provided in the region directly upstream of the system aperture, that is to say in the fourth lens group. Particularly favourable are embodiments having two such doublets which can follow one another directly. A positive air lens, convex relative to the image plane, is respectively arranged between the lenses of the doublet. Such doublets composed of a collecting biconvex lens and a diverging meniscus have a positive effect on the correction state and can counteract the aberrations which are introduced by lenses with a strong, positive diffracting power downstream of the system aperture. It can be favourable, moreover, to arrange in the object-side entry region of the fourth lens group at least one meniscus lens, concave towards the object, with a positive refracting power, in order to collect the radiation coming from the waist in conjunction with a low areal stress.
In order to achieve very high numerical apertures, it is advantageous when the fifth lens group has exclusively positive lenses. It is possible, for example, to arrange four or more positive lenses between aperture stop and image plane. In this case, favourable surface loads can be achieved whenever at least one meniscus lens, concave towards the image, with a positive refracting power is provided in the fifth lens group. In particular, two or more such lenses can be provided. The last optical element is preferably formed by a plano-convex lens which preferably has a spherical entry surface and a substantially flat exit surface. It is possible thereby, on the one hand, to achieve a good correction of spherical aberration and coma and, on the other hand, a substantially flat exit surface is favourable for immersion lithography. In preferred embodiments, the plano-convex lens is nonhemispherical, the centre of the spherical surface lying outside the lens. Truncated hemispherical lenses of this type can yield a reduced sensitivity to fluctuations in the working distance.
By applying some or all of these design principles, success has been achieved in preferred embodiments which keep the surface loads of the lenses so low that despite an aperture of more than NA = 0.9 or 1 , incidence angles whose sine is greater than approximately 90% or even approximately 85% of the image-side numerical aperture do not occur at any of the optical surfaces, and this simplifies the coating of the lenses and the adjustment of the objective.
In preferred embodiments, all the lenses of the projection objective consist of the same material. For operating wavelengths of 193 nm, synthetic quartz glass and, for operating wavelengths of 157 nm, calcium fluoride can be used, for example, as material. The use of only one kind of material facilitates production and permits simple adaptation of the objective design to other wavelengths. It is also possible to combine a plurality of kinds of material in order, for example, to support the correction of chromatic aberrations. It is also possible to use other UV-transparent materials such as BaF2, NaF, LiF, SrF, MgF2 or the like. In addition to the claims, the description and the drawings also disclose the preceding and further features, it being possible for the individual features to be implemented on their own or severally in the form of subcombinations in the case of embodiments of the invention and in other fields, and for them to constitute advantageous designs which can be protected per se. In the drawings:
Figure 1 shows a lens section through a first embodiment of a refractive projection objective which is designed for a 193 nm operating wavelength;
Figure 2 shows a lens section through a second embodiment of a projection objective which is designed for a 193 nm operating wavelength;
Figure 3 shows a lens section through a third embodiment of a projection objective which is designed for a 157 nm operating wavelength; and
Figure 4 shows a lens section through a fourth embodiment of a projection objective which is designed for a 193 nm operating wavelength.
In the following description of preferred embodiments, the term "optical axis" denotes a straight line through the centres of curvature of the optical components. Directions and distances are described as on the image side or towards the image when they are aligned in the direction of the image plane or the substrate, which is to be exposed, located there, and as on the object side or towards the object when they are directed towards the object with reference to the optical axis. In the examples, the object is a mask (reticle) with the pattern of an integrated circuit, but it can also be another pattern, for example a grating. In the examples, the image is formed on a wafer which serves as a substrate and is provided with a photoresist layer, but other substrates are also possible for example elements for liquid crystal displays or substrates for optical gratings. The focal lengths specified are focal lengths with reference to air.
Identical or mutually corresponding features of the various embodiments are denoted below with the same reference symbols for reasons of clarity.
A typical design of an embodiment of a purely refractive reduction objective 1 according to the invention is shown with the aid of Figure 1. It serves the purpose of projecting in conjunction with virtually homogeneous immersion a pattern, arranged in an object plane 2, of a reticle or the like into an image plane 3 to a reduced scale, for example to the scale of 5:1. This is a rotationally symmetrical single-waist system with five lens groups which are arranged along the optical axis 4, which is perpendicular to the object plane and image plane, and form an object-side belly 6, an image-side belly 8 and a waist 7 situated therebetween. The first lens group LG1 , following the image plane 2, has a negative refracting power and a focal length of -166 mm. A second lens group LG2, following thereupon, has a positive refracting power with a focal length of 121 mm. A third lens group LG3, following thereupon, has a negative refracting power and a focal length of - 33 mm. A fourth lens group LG4, following thereupon, has a positive refracting power with a focal length of 166 mm, which therefore corresponds in terms of magnitude to the focal length of the first lens group. A fifth lens group LG5, following thereupon, has a positive refracting power and a focal length of 170 mm, which is of the order of magnitude of the focal length of the fourth lens group and of the first lens group LG1 in terms of magnitude. The system aperture 5 is arranged between the fourth lens group LG4 and the fifth lens group LG5 in the region, near the image, of maximum beam diameter, that is to say in the second belly 8 of the objective.
The first lens group LG1 , following the object plane 2, is substantially responsible for the expansion of the light bundle into the first belly 6. It comprises three lenses 11 , 12, 13 with a negative refracting power, the first lens 1 1 and the second lens 12 being configured as biconvex negative lenses. The third lens 13 is a diverging meniscus in the case of which as a special feature the concave side is directed not towards the object 2 but towards the image plane 3. This arrangement is very favourable for correcting the tangential astigmatism. Otherwise, the first lens group includes two aspherics, specifically the entry sides of the second and the third lens. The aspherics have a positive influence on the very good correction of the distortion and the astigmatism.
The second lens group LG2 comprises four collecting menisci 14, 15, 16, 17, facing the reticle or the object plane 2 with their concave side, a biconvex positive lens 18 and two collecting menisci 19, 20 facing the wafer or the image plane 3 with their concave side. This design, in which the curvatures of the meniscus surfaces run on the object side and image side of the biconvex lens 18 in opposite directions with concave surfaces averted from one another, ensures small areal stresses for the menisci and the positive lens 18, and thus few aberrations. The biconcave air lens between the biconvex positive lens 18 and the following meniscus lens 19 has with its strong astigmatic undercorrection a favourable influence on the balancing-out of the astigmatism in the front part of the system upstream of the waist 7.
The third lens group LG3 consists exclusively of diverging lenses, specifically a negative meniscus lens 21 with image-side concave surfaces, a biconcave negative lens 22, following thereupon, a further biconcave negative lens, following thereupon, and a negative meniscus lens 24, following thereupon, with object-side concave surfaces. With reference to a plane of symmetry 9 lying between the lenses 22 and 23, these four lenses are designed with mirror symmetry with regard to lens type (meniscus lens or biconcave lens) and direction of curvature of the optical surfaces. Together with the last two lenses 19, 20 of the second lens group and the first two lenses 25, 26 of the fourth lens group LG4, following thereupon, there is a series of two collecting menisci 19, 20 and one diverging meniscus 21 , all three of which have concave surfaces facing the waist or the plane of symmetry 9. In the opposite, mirrored direction, that is to say on the image side of the plane of symmetry 9, the two biconcave negative lenses 22, 23 are again followed at the waist, that is to say in the area of smallest diameter, by a diverging meniscus 24 and two collecting menisci 25, 26 of the fourth lens group. This design having mirror symmetry relative to the plane of symmetry 9 supports a low tensioning or a low areal stress of the optical surfaces, and thus few aberrations.
The third lens group includes, in the form of the exit surface of the smallest lens 22 and the exit surface of the negative meniscus lens 24, two aspherics which make a substantial contribution to the correction of the coma and the astigmatism.
The fourth lens group LG4 comprises on its entry side two positive meniscus lenses 25, 26 which are concave relative to the object plane and are followed by two doublets 27, 28 and 29, 30. Each of the doublets has, on the object side, a collecting biconvex lens 27 and 29, respectively, and downstream thereof a diverging meniscus 28 and 30, respectively, whose concave surfaces point towards the object plane. The two spherically strongly overcorrected, diverging menisci 28 (f = - 728 mm) and 30 (f = -981 mm) counteract the strongly undercorrected, collecting lenses of the fifth lens group LG5 following downstream of the system aperture 5. The combination of the collecting biconvex lens and the diverging meniscus inside a doublet has a very positive effect on the correction of image errors in the region of the second belly 8. With their strong overcorrection of the tangential astigmatism, the two menisci 28, 30, in particular the thick meniscus 28, counteract the undercorrection in the fifth lens group LG5.
The fifth lens group LG5, situated downstream of the system aperture 5, is substantially responsible for producing the high numerical aperture. Provided for this purpose are exclusively collecting lenses, specifically a positive meniscus lens 31 , arranged in the region of the system aperture 5, with surfaces concave towards the image, a biconvex positive lens 32, following thereupon, with a slightly curved entry side and a more strongly curved exit side, a positive meniscus lens 23, following thereupon, with surfaces concave towards the image, a further positive meniscus lens 24, likewise with surfaces concave towards the image, and a terminating plano-convex lens 35 with a spherical entry side and a flat exit side. The positive lenses 31 , 32, 33 and 34 are strongly undercorrected spherically and overcorrected with reference to the coma. In the case of this design, the correction of the spherical aberration and the coma is therefore implemented substantially in conjunction with the configuration of the fourth lens group LG4 which is situated upstream of the system aperture 5 and creates a corresponding offset of these aberrations.
Consequently, the fourth lens group LG4 and the fifth lens group LG5 are responsible in combination for achieving a good correction state of the spherical aberration and of coma. An aspheric surface on the entry side of the biconvex lens 27 of the first doublet substantially supports the correction of the spherical aberration, but also of the coma of third order. An aspheric surface, arranged in the vicinity of the system aperture 5, on the exit side of the positive meniscus lens 31 , convex towards the object, at the input of the fifth lens group LG5 chiefly corrects aberrations of higher order and thereby makes a substantial contribution to setting a good aberration compromise. A likewise positive influence on the correction of aperture aberration and coma is exerted by the spherical, convex entry surface of the plano-convex lens 35. The latter is spherically overcorrected and undercorrected with reference to coma.
The system has a working distance on the image side of approximately 8.4 mm, which can be filled up by an immersion fluid 10. Deionized water (refractive index n = 1.47) or another suitable transparent liquid, for example, can be used at 193 nm as immersion fluid.
The correction state of the optical system 1 is excellent. All aberrations are corrected. The RMS value of the wavefront deformation is very low at 4 mλ. The distortion of all field points in the region is below 1 nm. A projection objective is thus created which operates at an operating wavelength of 193 nm, can be produced with the aid of conventional techniques for lens production and coating, and permits a resolution of structures substantially below 100 nm.
The design described is fundamentally suitable for near-field lithography, as well, by the use of a homogeneous immersion. For this purpose, the terminating plano-convex lens 35 is to be combined with the immersion layer 10 to form a lens which can consist, for example, of synthetic quartz glass. In order to permit sufficient light energy of the evanescent field to be coupled in, in this case the working distance between the exit surface of the projection objective and the image plane should be in the region of 100 nm or below.
The specification of the design is summarized in a known way in tabular form in Table 1. Here, column 1 gives the number of a refracting surface, or one distinguished in another way, column 2 gives the radius r of the surface (in mm), column 3 gives the distance d denoted as thickness, of the surface from the following surface (in mm), column 4 gives the material of the optical components, and column 5 gives the refractive index of the material of the component, which follows the entry surface. The useful, free radii or half the free diameter of the lenses (in mm) are specified in column 6.
In the case of the embodiment, six of the surfaces, specifically the surfaces 4, 6, 15, 29, 34 and 44, are aspheric. Table 2 specifies the corresponding aspheric data, the aspheric surfaces being calculated using the following rule:
p(h)=[((1/r)h2)/(1 +SQRT(1-(1+K)(1/r)2h2))]+C1 *h4+C2*h6+...
Here, the reciprocal (1/r) of the radius specifies the surface curvature, and h the distance of a surface point from the optical axis. Consequently, p(h) gives the so-called sagitta, that is to say the distance of the surface point from the surface apex in the z direction, that is to say in the direction of the optical axis. The constants K, C1 , C2, ... are reproduced in Table 2.
The optical system 1 , which can be reproduced with the aid of these data, is designed for an operating wavelength of approximately 193 nm, for which the synthetic quartz glass used for all the lenses has a refractive index n = 1.56029. The image-side numerical aperture is 1.1. The system is adapted to a refractive index of the immersion medium 10 of n = 1.56, which permits a virtually ideal coupling of the light into the immersion layer 10. The objective has an overall length (distance between image plane and object plane) of 1 162 mm. A light conductance (product of numerical aperture and image size, also denoted etendue or geometrical flux) of 24.1 mm is achieved given an image size of 22 mm.
A variant of the projection objective shown in Figure 1 is explained with the aid of Figure 2. Lenses or lens groups of the same type or the same function are denoted by the same reference symbols for reasons of clarity. The system 1 ' is optimized for a refractive index of the immersion medium of n = 1.37, and this corresponds to a value, which has become known from the literature, of 157 nm for the refractive index of an immersion fluid based on perfluoropolyether (PFPE).
The fourth and the fifth lens group differ in terms of design from that in accordance with Figure 1. In LG4, the thick meniscus lens 28 of the first doublet in Figure 1 is split up into an object-side, biconcave negative lens 28' with an only slightly curved exit side and a subsequent biconvex positive lens 28" with a correspondingly only slightly curved entry side. This splitting-up further reduces the areal stress of the optical surfaces in this region. The rim ray of the projection runs in a converging fashion in the air space between the subsequent lenses 29, 30 upstream of the entry surface of the meniscus 30 which is concave towards the object. In the fifth lens group LG5, the entry-side lenses 31 , 32, separated in the case of the design in Figure 1 and downstream of the system aperture 5 are combined to form a single, biconvex positive lens 32'. This is situated at a distance downstream of the system aperture 5, which can be accessed particularly easily. A further special feature consists in that the system aperture 5 is situated between a plane, near the image, of maximum beam diameter and the image plane 3, that is to say where the transilluminated diameter of the lenses already decreases towards the image plane. The other lenses correspond with regard to the type and sequence of the lenses of identical reference symbols in Figure 1. In the case of this design, as well, all the lenses consist of synthetic quartz glass. The specification of this design in the notation described is specified in Tables 3 and 4.
Shown in Figure 3 is a third embodiment, designed for an operating wavelength of 157 nm, of a projection objective 1" whose specification is given in Tables 5 and 6. It is to be seen from the sequence and the type of lenses that the design is based on the design principle explained with the aid of Figures 1 and 2, and so the same reference symbols are used for lenses and lens groups with corresponding functions. As in the case of the embodiment in accordance with Figure 1 , no further optical element is arranged upstream of the first biconcave negative lenses 1 1 of the objective. As in the case of the embodiment in accordance with Figure 2, in the fourth lens group LG4 the thick meniscus lens 28, still in one piece in Figure 1 , is split up into a biconcave negative lens 28' and a directly following biconvex positive lens 28". Just as in the case of the embodiment in accordance with Figure 2, the function of the entry-side lenses 31 , 32 of the embodiment in accordance with Figure 1 is taken over by a single, biconvex positive lens 32' which initiates the ray combination towards the image plane. In a way similar to the case of the embodiment in accordance with Figure 2, the system aperture 5 is situated inside the second belly 8 downstream of the region of maximum beam diameter, that is to say where the beam diameter already decreases again towards the image plane.
The refractive index for the immersion medium is set at n = 1.37, which corresponds to a value, which has become known from the literature, for a PFPE-based immersion fluid sufficiently transparent at 157 nm. The image-side working distance is set to approximately 50 μm, which corresponds in practical use to the thickness of the immersion layer. It may be assumed that suitable immersion fluids still have high transmission values of more than 90% in the case of this low thickness, and so only negligible, low transmission losses occur in the region of the immersion, this being favourable for achieving a satisfactory wafer throughput. Pattern widths of less than 70 nm can be resolved with the aid of this purely refractive projection objective, of excellent correction state, which can be implemented using conventional means. Tables 7 and 8 show the specification of an embodiment (not illustrated pictorially) of a projection objective which is derived from the embodiment in accordance with Figure 3, from which it differs essentially in that the thick meniscus lens 17, concave towards the object, there is replaced by a thinner meniscus lens curved in the same direction. A comparison of Tables 5 and 6 shows that as a result an even more compact design is possible which has smaller lens diameters and a smaller overall length in conjunction with equally good optical properties.
A fourth embodiment of a projection objective 1'", which is designed for an operating wavelength of 193 nm and whose specification is given in Tables 9 and 10 is shown in Figure 4. This embodiment has a projection scale of 4:1 and an image-side numerical aperture NA = 0.9. A comparison with the remaining embodiments shows that less lens material is required in conjunction with the same fundamental optical principle. Instead of 25, as in the case of the other embodiments, there is a need for only 23 lenses, and moreover the average and maximum lens diameters are smaller than with the preceding embodiments. In particular, there is provision in the second lens group LG2 for only three menisci 14, 15, 16, concave towards the object, a lens corresponding to the menisci 17 of the other embodiments being absent. In contrast to the other embodiments, in the fourth lens group LG4 only one doublet 27 and 28 is provided, and so a saving of one lens is made in this lens group as well. The symmetrical design of the third lens group LG3 and of the lens pairs bordering thereon, 19, 20, of the second lens group and 25, 26 of the fourth lens group corresponds to that of the other embodiments. The embodiment in accordance with Figure 4 substantiates that it is also possible to implement solutions of favourable design within the scope of the invention for relatively large projection scales and relatively large fields. The correction state of all the embodiments shown is excellent. All aberrations are corrected. The maximum RMS value of the wavefront deformation is very low and is below 4.5 mλ for the embodiments in accordance with Figures 1 and 2, below 6.5 mλ for the embodiment in accordance with Tables 7 and 8, and below 5.2 mλ for the embodiment in accordance with Figure 4. Within all the systems, the distortion is in the region below 1 nm for all field points.
It can be seen by the person skilled in the art from the examples that numerous modifications of the designs are possible within the scope of the invention. For example, individual lenses can be split up into two or more separate lenses, or separate lenses can be combined to form a single lens having essentially the same function.
Embodiments with two or more lens materials are also possible. For example, in the case of embodiments for 193 nm it is possible to provide a combination of lenses made from synthetic quartz glass and calcium fluoride in order to facilitate chromatic correction and in order to avoid changes in refractive index because of compaction in regions of high radiation energy densities by using calcium fluoride lenses. Also possible is the use of other materials transparent to the ultraviolet light used, such as barium fluoride, sodium fluoride, lithium fluoride, strontium fluoride, magnesium fluoride or the like.
Catadioptric systems for immersion lithography can also be designed using essential configuration features of the embodiments represented here, in particular in the region, near the image, of the second belly and the aperture stop.
The technical teaching of the invention explained with the aid of various exemplary embodiments shows that a range of design boundary conditions should be taken into account when the aim is to design an optical system suitable for immersion lithography, particularly one of such compact design. The following features can be beneficial individually or in combination. Immersion objectives for which the image field diameter is greater than approximately 1 %, in particular greater than approximately 1.5% of the overall length are favourable. Favourable light conductances (product of image field diameter and numerical aperture) are in the region of above 1 %, in particular above 2% of the overall length. Four or more collecting lenses between aperture stop and image plane are favourable, it being preferred for only collecting lenses to be provided in this region. Preferably more than four, five or six consecutive collecting lenses are favourable in the second lens group. In this case, preferably two or more collecting menisci with an object-side concave surface are favourable in the entry region of the second lens group, and two or more collecting menisci with surfaces concave towards the image are favourable at the end of the second lens group. In the region of the first belly or of the second lens group a strong beam expansion is beneficial for which the maximum beam diameter is preferably more than 1.8 times, in particular more than 2 times the object field diameter. The maximum lens diameter in the second lens group can be approximately twice the minimum free lens diameter of the third lens group in the region of the constriction. The maximum lens diameter in the second belly following the constriction is preferably of the same order of magnitude and can, in particular, be greater than twice the minimum free diameter in the third lens group. In the region of the third lens group, that is to say in the region of the waist of the system, two concave surfaces are preferably directly opposite one another and are enclosed by two surfaces curved in the same sense. The lenses respectively adjoining towards the object and towards the image are also preferably designed and arranged in this way. Particular lens distributions can be favourable. In particular, it is favourable when substantially more lenses are situated upstream of the system aperture than downstream of the aperture. The number of lenses upstream of the aperture is preferably at least four times, in particular more than five times, the number of lenses downstream of the system aperture. Five or more collecting lenses are preferably arranged between the region of narrowest constriction and the system aperture or aperture stop; the axial distance between the region of narrowest constriction and the aperture stop arranged exceptionally near the image is favourably at least 26%, if appropriate more than 30% or 35%, of the overall length of the projection objectives.
Further special features relate to the trajectory of and the relationships between principal rays and rim rays of the projection. Denoted here as principal ray is a ray which runs from a rim point of the object field parallel or at an acute angle to the optical axis and which cuts the optical axis in the region of the system aperture. A rim ray in the sense of the present application leads from the middle of the object field to the rim of the aperture stop. The perpendicular distance of these rays from the optical axis yields the corresponding ray height. It can be favourable when the principle ray height is greater in absolute value up to the end of the second lens group than the rim ray height, this relationship preferably not being reversed until in the region of the third lens group. The maximum rim ray height is preferably more than twice, in particular more than 2.3 to 2.5 times, the rim ray height in the region of the narrowest constriction of the third lens group. It is favourable when the diameter of the rim ray is kept small in the region between the fourth and fifth lens groups, that is to say in the region of the system aperture. This corresponds to a smallest possible focal length of the fifth lens group, following the system aperture. The focal length of the fifth lens group is preferably smaller than 15%, in particular smaller than 10% of the overall length. Preferred systems are doubly telecentric, and so the principal ray is substantially perpendicular both to the object plane and to the image plane. In preferred systems, the principal ray coming from the object field should still have a divergent trajectory after at least five lenses, that is to say a trajectory with a still rising principal ray height away from the optical axis. It is favourable, furthermore, when the sine of the maximum principal ray divergence angle in the objective region near the object is more than 50% of the object-side numerical aperture. A plurality of aspheric surfaces are preferably provided in the region near the object in which the rim ray height is greater than the principal ray height, in order to promote a favourable correction state.
The invention also relates to a projection exposure machine for microlithography which is distinguished in that it includes a refractive projection objective in accordance with the invention. The projection exposure machine preferably also has devices intended for introducing and keeping an immersion medium, for example a liquid of suitable refractive index, between the last optical surface of the projection objective and the substrate to be exposed. Also covered is a method for producing semiconductor components and other finely structured structural elements, in the case of which an image of a pattern arranged in the object plane of a projection objective is projected in the region of the image plane, an immersion medium arranged between the projection objective and the substrate to be exposed and transparent to light at the operating wavelength being transilluminated. Table 1
1/2 FREE
THICKNESSES 193 30 nm DIAMETER
C 000000000 2 ^ SC0160O0O 55 000
C 000000000 s JC:66S462 59 973
-697 37313135? -30738619 SI02 1 £6028900 60 658
317 877790BJ.6 13 36.-856184 63 806
389 51736147-1AS 8 ^1=96 568 SI02 1 S6O28900 65, ,103
C84 97B717634 ?: 09 566944 70 051
61? 579041S06AS 1" 'C3C.3S007 SI02 1 S6028900 66 338
315 23B308546 '4 JL '7/7166 92 585
-636 303175512 64 1 /D&62854 SI02 1 56026900 95 153
-20" 03672956S 1 ootoooooo 120 585
10 -942 4072235B1 39 .5)776761 SI02 1 56028S00 130. ,798 11 -3 '' 523354272 1 -J2033169 137 817 12 -856 579360710 53 OΪ3176363 S102 1 5602B900 145 587 13 -222 120764338 1 OGOOOϋOOO 14B 413 14 -36b 979641333 16 5635471/B S102 1 5602B900 148 6S6 15 -300 37S347712 1 0-3000000 150 000 16 622 472470310 44 7-1302453 S102 1 56028900 146 389 17 -556 306013695 1 C20913522 145 384 IS 335 290972565 40 C72419816 SI02 1 56026900 113 552 IS 140 238400611 1 OD7703555 99 382 2C 328 14648927" 33 605830320 S102 1 5602B900 97 .047 21 178 3B1821741 21 3L7336106 87 913 22 764 210626300 8 f 0b30767 SI02 1.56028900 85 346 23 81 619567541 55 1)1180427 66 0S8 24 -324 577506735 01D204B76 SI02 1 56028900 63 499 2E 133 065440504AS 2S U-630876 62 507 26 -275 984572757 12 >2l405S8b SI02 1 56026900 63 961 27 268S 503343355 41 313073620 68 171 28 -83 02436343". 0 216662930 SI02 1 56028900 69 3sa 2S -271 500870518AS -> 122879020 ■)0 369 30 -234 0B2816820 34 813633391 SI02 1 56028SC0 93 111 31 -128 67921339B 1 ^75380851 9e 648 32 -371 070689222 4υ E647662βe SI02 l 560269C0 112 720 33 -.58 SS5144143 2 14/646331 116 033 31 844 b6510312£AS 'Sό89467ε s:o2 1 56C2S900 123 CZ2 35 -293 770426726 2C 164927C93 123 344 36 -170 0B16206B7 27.028C3D SI02 1 56028900 122 733 37 -316 315520485 X S-36C7028 137 139 38 623 625S71S33 56 -* '8798-05 SI02 1.56028900 143 361 35 - 79 372716473 20 1=6323351 143 139 40 -246 921005ιOΘ IS 567267168 SI02 1 56028900 142 262 41 -460 148730B28 4-5394474 145 978 42 0 000000000 15 465394474 144 329 43 b06 946830874 18 875460558 3102 1 56028900 144 915 44 1011 956468S31AS 22 930981004 144 124 45 1/60 7C1259607 42 73-B61S27 ST02 1 56028900 143 914 46 -371 926449461 1 3-1397272 143 620 47 194 244261542 12 532993241 STC2 1 56028900 120 019 48 689 962205932 1 126753967 114 927 49 109 590774593 1 -7-3r6t65 SI02 1 56028900 88 972 SO lb6 823775540 1 072372E2B 79 549 5. j.18 CS260764e ΘO OOuOOOOOO SI02 1 56028900 73 749 52 0 00000000Q a 436211-91 Irrrnersior. j. E60OCO0O 19 439
0 oαooooooo 0 oooooooco 11 000
Table 2
ASPHERIC CONSTANTS SURFACE NO. 4 SURFACE NO 44
K 0 .0000 K 0. .0000
Ci 2 13C4792ie-00; CI -s. . lB910040e-009
C2 -3 .57S33301e-01i C2 3. ,S1025484e-013
C3 2 .?3263Ce3e-0]5 C3 -5. .47716488e-018
CM -4 .GI46iC71e-01S C4 4. .43561455e-023
C5 2 .768615706-02-' C5 3 ,42844064e-028
C6 1 .6274083Ce-027 ce -1. ,97724021e-032
C7 - 3 .437328S3e-031 C7 2. ,22456117e-037 ca 0 . OO0D0O0Ce»O"0 C8 0. . OOOOOOOOe+000
C9 C OOOCOCOOe-'-OOC C9 0. . OOOOOOOOe+000
SURFACE ; NO C
0 .0000
Figure imgf000027_0001
C2 2 ,0216€62Se-0:i
C3 -1 ,7640310Se-OI5
C4 2 ,3630534Ge-01?
C5 -2 ,S5314839e-02:-
C6 3 ,3S459868e-027
Figure imgf000027_0002
SURFACE NO. 25
K 0. .0000
CI -9. ,78914413e-C08
C2 -4. ,33D68283e-C12
C3 -6, ,01CO1563e-0l7
C4 -1, ,31611936e-01S
C5 6. .S4375176e-023 β -1 ,37293S57e-026
C7 1, ,58764S7Se-030 ca 0 .O0OGO00Oe+CO0
C9 0 .OOOOOOOOe+000
SURFACE NO 29
K 0 ,0000
CI 2 .994978076-008
C2 -3 .161319436-012
C3 -9 , .610083848-017
C4 2 ,O56475S5e-020 nc. - 2 ( ,56167018e-024
Cβ .74321022e-028
C7 -7, .598026846-033
C8 0, . OOOOOOOOe + 000
CS 0, . OOO OOe+000
SURFACE NO 3''
K 0 .0000
C2 -5 .835933066-009
C2 -4 0P2S3B926-C1S
Figure imgf000027_0003
C4 1. .26466423e-022
C5 -1 0309C955e-G?6
C6 4. .020189166-033
Figure imgf000027_0004
CC 0, . OOO COOOe-i no
Ci' 0 OOOOCOOOeπ GOT) Table 3
1/2 FREE
SURFACE RADII THICKNESSES LENSES 7 T> nm DIAMETER
0 0 000000000 21 snoι6oooo L710 0 S99SB200 55 000
1 0 000000000 6 ?-8 62492 710 0 99998200 55 974
2 603 070624671 l-.j6-455 SI02H1. 1 5602BS00 60 6S0
3 280 91633-78- υ-237883 hE193 0 99971200 64 3BC
4 461 660931347AS vu-OOOOOO bI02HL 1 5602BSOC 65 79B
5 681 2614064B7 25 ^S-53 J824 HE193 c 99971200 70 487
6 421 79673282SAS 1- "1002B°97 SIC2H 1 56028300 89 920
7 306 236502978 -41054-01 *ιE193 0 99971200 95 293
8 -sei 74307598B C-x -4 962259 SI02HI, 1 56028900 97 777
9 397 61C228767 3 G2J715830 FE193 0 99971200 123 195
10 1019 995266570 39 472283137 SI02KL 1 5602B900 130 947
11 266 549348161 2 2E10B3976 HE193 0 99971200 136
12 -C59 273684770 bZ 0B9256568 SI02HL 1 S6028900 143 894
13 -209 207390137 1 C0E4S1BS3 HE193 0 99971200 146 415
14 -565 795559961 15 822681399 SI02HL 1 SS02B900 145 408
15 410 BββeeBBi-7 1 OOC000613 HE193 0 °9971200 146 045
16 809 207497255 37 59S0453B2 SI02HL 1 S6028900 142 424
»7 -599 2602B7529AS Or CO0O015 HE193 0 99971200 141 453 ιe 136 3042S7826 «2 £28385200 SI02HL 1 56028900 113 454
19 157 S16637917 1 CO OOOOOO RE193 0 99971200 101 084
20 126 013978931 051407776 S102H 1 56028900 96 007
21 157 5198186B8 2 > 594259229 HE193 0 99971200 84 914
72 795 4S56083S7 a SI02HL 1 56028900 62 369
23 78 S18295716 '35934318 HE193 0 99971200 6- 551
24 647 136797738 ε. 0Cr,O0O184 SI02HL 1 56028900 63 056
25 348 15B813477AS -2 -40106724 HE193 0 9S971200 61 484
26 137 85B636028 9 960377452 S102HL 1 S6028900 62 472
27 1367 44B704100 4ι 007582498 HC193 0 99971200 66 716
2E -87 2SS013445 0 "7S217865 SI02HL 1 56028900 66 713
25 396 760639119AS 6 17^661900 HE193 0 99971200 88 202
30 317 09S5976'4 31 SI02H 1 56028900 SO 935
31 -136 B16156215 1 9^6487291 HE S3 0 9SS712C0 S6 054
32 361 62J.022314 a 25-851268 SI02HL, 1 S6028900 107 8^2
33 -156 063116757 1 OOC000006 HE193 0 99971200 111 057
3* 607 690134076AS 4- ^96271566 SI02HL 1 5602E900 117 5BS
35 -280 88516-.902 -5 -.5481C908 HE193 0 99971200 117 903
36 166 5026301-.1 <, 238823967 SI02H 1 56028900 117 263
37 =88 1680_.e668 6 683211723 I-F193 0 99971200 131 602
36 1106 583200370 >« 08-S72378 SI02HL 1 56028900 134 587
39 -J53 437756566 1 -00000005 HE193 0 99971200 136 483
40 445 824457242 52 62431BB54 SI02HL 1 56028900 142 73S
41 460 556S66224 S 26 1S8809BB0 HE193 0 99971200 142 372
42 248 318425801 36 706472180 E102H1- 1 56028900 141 622
43 340 049722714AS 36 3125930B2 HE193 0 99971200 146 673
44 0 000000000 33 976710616 HE193 0 99971200 142 237
45 1026 963SO56G0 42 9073660B2 SI02HL 1 5602E900 142 523
46 417 465602639 1 875432B53 1-.E193 0 99971200 142 184
4'' 189 031074062 41 88921B814 9I02HL 1 5602B900 121 251
48 698 09E9045BOAS 1 076370648 HE193 0 99971200 117 434
49 ]09 9EB«79321 053123871 SI02HL 1 56028900 91 356
SO 16"" t47263929 1 034716212 HE193 0 99971200 B4 177 ] 1-3 =15C62411 /3 999373259 SI02HL 1 56028900 77 713
52 0 OCOOOOOOO 10 3660307-7 IM ERS 1 37000000 25 CB9
5- 0 000000000 a OCOOOOOOO OOCOOOOO 11 OOO
Table 4
ASPHERIC CONSTANTS
SURFACE NO 4 SURFACE NO 34
K 0 0000 K 0. 0000
CI 2 26522214e-007 CI -4. 236370176-009
C2 - 3 592366516-011 C2 -3. 29710303e-014
C3 2 921337256-015 C3 -3. S2756803e-018
C4 -3. 776SS824e-019 C4 -4. 13266120e-023
C- 7. 9S3588SB6-024
C5 -2. 16653880C-027
C6 3 919863856-027
C6 2. 27691141e-031
C7 -4. 547113246-0 1
C7 -B . 70596013e-036
C8 0. OOOOOOOOe+OOu
C8 0. OOOOOOOOe+OOO
C9 0 OOOOOOOOe+000
C9 0. OOOOOOOOe+000
SURFACE NC 1. 6
SURFACI : NO. 1
0 .0000
CI -1 .19063117e-007
K 0. .0000
C2 1, .941332666-011
CI 3. .45855942e-009
C3 -1 ,81962009e-015
C2 5. 47566277e-014
C4 2 .25i93097e-019
C3 -3. 85610770e-018
C5 -2 .255665586-023
C4 2. 74041138e-023
C6 1. .19237134e-027
CS 1. 86632362e-027
C7 -2, .51584924e-032
C6 -3. .4474"2394e-032
C8 0. .OOOOOOOOe+000
C7 3. .29571792e-038
C9 0. . OOOOOOOOe+000
CB 0. .OOOOOOOOe+OOO
C9 0. OOOOOOOOe+000
SURFACE NO 17
SURFACE NO. 43
K 0. .0000
CI 1 , ,74375723e-011
K 0. .0000
C2 -2. ,04139734e-014
CI -3. .55873802e-010
C3 7 676S6306e-019
C2 9. .63322458e-014
C4 -1. .937156066-023
C3 -7. .64415866e-ClS
C5 .928340246-02"
C4 2. .00153471e-023
C6 -7. .025658376-032
C5 -1, .9B329358e-027
C7 _.. .145~6119e-03S
C6 5. .52524526e-032
C8 0. . OOOOOOOOe+OOO
C7 -4 .80B76S07e-037
C9 0, . OOOOOOOOe+OOO
C8 0 .OOOOOOOOe+OOO
C9 0 .OOOOOOOOe+OOO
SURFACE NO 1. 25
SURFACE NO 48
K 0 .0000
CI -e, , 99705361e-008
K 0 .0000
C2 -3. ,25537639e-0J2
CI -2 .252894846-009
C3 -2 , 930134086-016
C2 2 .62711B22e-013
C4 -9. .17751598e-020
C3 3 .12883195e-018
CS Δ 342615556-023
C4 -2 .950097576-022
C6 -1 .019ϋl896e-02.6
CS 1 .93969203e-026
C7 1 428412666-030
C6 -7 .027020446-031
CB 0 . OOCOOOOOe+O O
C7 1 .4D339412e-035 9 0 . OOOOOOOCe+000
C8 0 . OOOOOOOOe+OOO
C9 0 . OOOOOOOOe+000
SURFACE NO . 29
K 0 .0000
Figure imgf000029_0001
C5 -1 .511631S9e-C24
C6 6 .555200896-023
C7 _ - 154142706-013
C8 0 . OOC OOOOe+OϋO
CS 0 . CCI-OOGOeH 300 Table 5
1/2 FREE
TI HICKNESSES LENSES ???.?? nm DIAMETER
0 0. . OOOOOOCOO 21 . L60160000 L 10 1. .00000000 55. ,000
1 0 . OOOOOOOCC 5 .5i.llS9992 L710 1 .00000000 59 .973
2 -653 .3EC1S3342 10 .705637537 CAF2HL 1 .55848720 60 .652
3 224 .06681527- 1 . 52447066 HE193 1 .00000000 64. -672
4 ■541 .4437-5-22/-S S .CSS0I8137 CAF2H 1 .S5B48720 66. .216
5 80S .687192810 22 .C60552617 HE193 1 .00000000 70. .663
6 437 . C177 2373SS .535405940 CAF2H 1 .S5B48720 BB. .269
7 31S .047933823 22 .322216303 3--E193 1 .00000000 94. .661
8 -10SΞ .166104070 SB .741607282 CAF2H .S584B720 97. .341
9 -440 .417777767 1. . S301E7109 HE193 1. .00000000 124, ,495
IC -833. •2357S6S65 45. .202596015 CAF2HL 1. .5584B720 130, .520
11 -248 .097167968 6. .967867993 HE193 1. .00000000 136. .785
12 -667 .629333065 58. .527118374 CAF2Σ3L 1. .55848720 147. .021 3 -230 .265301432 1. . OOOOOOOO HE1S3 1, ,00000000 152. .069
14 -635. .989031493 52. .689S33957 CAF2H 1. .5584B720 151. ,762
15 -420. .8979BO530 1. . COOOOOC'OO 3ffil93 .00000000 155. .231
16 662. .574050518 42. 565465056 C7AF2HL 1. .55848720 ISO. .819
17 -650. .60232592B7AS 1. OOOOOOOOO HE193 1. ,00000000 149. 697
16 143. ,909393739 39. 312156678 CAF2KI, 1. 55848720 117. 562
19 170. .361039751 1. OOOOOOOOO HE1S3 1. ,00000000 106. 663
20 127. .36-6971-5 33. 064705540 CAF2H 1. 55648720 99. 558
21 149. .757517-50 27. 658696477 HE193 1. OOOOOOOO 88. 267
22 BS3 .404652749 8. OOOOOOOO CAF2KL 1. ,55848720 85. .687
23 85 .474739309 42. 082501866 HE193 1. OOOOOOOO 67. .021
24 -554. .412838287 B. OOOOOOOOO CAF2H 1. .55848720 65. .854
25 133. , 887772S2-AS 36. CS7576773 HEΪ93 1. .OOOOOOOO 63, 605
26 -202 .032636775 OCOOOOOOO CAF2EL 1. .5S84B720 64. .919
27 136B. .82722£050 39. 670258843 HE193 1. .OOOOOOOO ee. ,993
28 -B7. .722719327 6. 150939605 CAF2H3-- 1, 55848720 70. 0S7
25 -342. 8675545 3AS 7. 243142706 KE193 1. .OOOOOOOO 89. 680
30 -270. .293973321 34. 612052471 CAF2HL 1. .55848720 92. 272
33 '-131. 1. OOOOOOOOO HE193 1. .OOOOOOOO 97. 490
32 -356 .37S28727S 37. 218470508 CAF2KL 1 .55848720 109, ,741
33 -160. .486735217 1. . OOOOOOOOO HE193 1 •OOOOOOOO 113. ,010
34 72£ .4173529277,5 44. .411516365 CΛF2KL 1 .55848720 121. .086
3S -285 .SS17SC303 26. .777077207 HE193 1 .OOOOOOOO 121. .404
36 -165 .413078226 8. .OOOOOOOOO CAF2KL 1 .55848720 120. .698
37 1233 .439177430 .704973559 HE193 1 .OOOOOOOO 135 .515
38 1S68 .954811160 42. .9250334B0 CAF2HL 1 .55848720 136 .862
39 -33 .436426426 1. . OOOOOOOO HE193 1 .OOOOOOOO 138 .795
40 448. .482BB5926 53. .515273929 CAF2H 1 .55848720 145 .983
41 -4B1. .77B223591AS 38. .664604302 HE193 1 .OOOOOOOO 145 .641
42 -257. .207339099 39. .6S1S11432 CAF2HL 1 .SS64B720 141 .355
43 -352 .351244424AS B .074724759 HE193 1 .OOOOOOOO 146 .219
44 0 .000000000 8 .135112666 HE1S3 1 .OOOOOOOO 142 .806
45 1571 .53e613070 41 .393617207 CAF2HL 1 .55646720 143 .060
46 -395 .S3019O539 4 .555628551 HE1S3 1 .OOOOOOOO 142 .883
47 ιes .594554041 44 .853603417 CA.F2HL 1 .55648720 122 .056
46 737 .400220721AS .254530428 HE1S3 1 .OOOOOOOO 117 .735
49 113 .971025132 34 .166140572 CAF2HL 1 .55648720 91 .979
SO 186 .560340212 1 . OOOOOOOOO I1Ξ193 1 .OOOOOOOO 85 .029
51 12 92. .227373544 CS-F2HL 1 .SEB4B720 76 .952
52 0. .OOCOOC'- '- 0 . OE0COO026 IMMERE 1 .37000000 11 .068
5 0 0000003C- 0 . ooocoeooo 1 .OOOOOOOO 11 000 Table 6
ASPHERIC CONSTANTS
SURFACE NO 4 SURFACE NO 34
K 7 3905 K 1 5440
CI 19i50--Sε- -007 I -3 43367330e-009
C2 -3 16-£78613e- -Ol C2 -1 344506626-014 c. 2 656SS2^_C- -015 C3 -2 252663E4e OiB
C4 - Z 54-SS71Se- -019 9 75729676e-023
CS 1 303-.5-7i-, 023 C5 -1 352027126-026
Co 2 26447fc06e 027 C6 8 B0518229e-031
C7 -2 51*781*9-.. C7 65068179e-035
CS 0 OCCOOGO )e- .000 CB 0 OOOOOOOOe+OOO
C9 0 00 - ^ + 000 C9 0 OOOOOOOOe+OOO
SURFACE NC 1 € SURFACE NO 1
0 62=3 K 0 0872
C -1 142948SSe- -007 CI 3 26909609e-009
C2 1 878*2380-.- Oil C2 7 76009100e-014
C3 -1 7516<s06Fs- 015 C3 -3 82E50327e-018
C" 2 3^3042806- 01S C4 2 2800785Oe-023
CS -2 31194'95e- -023 S -2 341E3e51e-028
C6 1 12C36' 97£- -027 C6 34376006e-032
C7 -2 C3074756e- -032 C7 -1 01621S32e-036
C6 0 000O00COε+0O0 C8 0 OOOOOOOOe+OOO
C9 0 OOOOOOi 0-. + 000 C5 0 OOOOOOOOe+OOO
SURFACE NO 17 SURFACE NO 42
K 0 7878 K 0 0312
CI -3 05430457e- -010 I -4 996678326-C1C
C2 -4 897731386- 014 C2 15316140e-Ci:
C3 1 06S231nC<-- 016 C3 -1 41640795e-01B
C4 1 475169E'! e- 023 C4 7 0S3656«l6-023 cε 1 343572- 6c- 02-' C5 -2 436494946-027
C6 -5 2390624Ce- 032 6 6 83361S66e-032
C~ 8 17C6DE )7e- -03? C7 -6 25568420e-037
C8 0 OOOOOOCCe+000 0 OOOOOOOOe+OOC
C5 0 OOOOG-OU-- 'C0& 0 OOOOOOOOe+OOO
SURFACE NO 25 SURFACE NO 4B
C 0012 K -1 6716
CI -6 90163ιrle- -0OB CI -4 014l4746e- 009
C2 2 08bC3453e, -012 C2 1 94301708e- 013
C3 -3 4θ958283e- -016 C3 4 07775O64e- 018
C* -3 58451954e- -C20 C4 -4 705747096- -022
C5 2 1625-654ε- -023 C5 2 426426S6e- -C26
C6 -3 EB801C 0-- -027 C6 -8 3894S612e- -031
C7 6 60002235s- -031 C7 1 38ie931J6 C35
Co 0 OOOt 000c- ,ιO(, C8 0 OOOOOOOOe- -000
C9 0 cocccnro-= -ro C9 c 000000006+000
SURFACE NO 79
Figure imgf000031_0001
C3 -2 :o:o:538c -C?
Ci 1 38SS0354ι= -C20
CS -1 751:6022.-: --■24 ce s 5-6136?^ -0"=!
Ci 4 3-,o;i--21_- -O-J C 0 •-0' - S c JϋfOOOOOc- ' OJO Table 7
1/2 FREE
RADII THICKNESSES LENSES 157 6 nm DIAMETER
0 C 00000""00 21 980160000 55 OOO
_ 0 0G0--( JOO 5 694S22O30 55 974
2 -683 S770GCQ60 0 000016965 CAF2HL 1 55848720 60 653
241 5L<:i''.Sl 13 49217'.. J19 64 060
4 561 3 7-74cιf£S 8 OOOOOOOOO CAF2H, 1 55848720 65 556
5 csε 154774317 -52 13511 69 867
6 400 792577467*5 11 762291230 CAF2HL, 1 55B48720 B8 232
7 .-? -- 25 615517 22 2δ51flβ600 92 83S
8 1055 362319550 71 454692862 CAF2HL 1 S5848720 95 242
Figure imgf000032_0001
10 -967 195111648 48 84781714B CAF2H 1 55848720 130 362
11 235 89653 -938 5 659224997 136 4-
12 -57<3 940954244 54 879651202 CAF2HL 1 55848720 145 324
13 223 ε: 'eriess 1 OOOOOOOOO 149 602
14 775 372223">25 -.5 081823940 CAF2hI_ 1 55848720 147 B07
15 -525 915-C-C17 1 OOOOOOOOO 148 157
16 660 302511324 18 720317303 CAF2HL 1 55648720 144 440
17 7J-- -.679* j29A£ 1 OOOOOOOOO 143 J03
18 147 955SS6945 38 541140120 CAF2HL 1 55848720 116 315
19 . ^ 5S4-.2 407 OOOOOOOOO 105 360
20 118 333525649 33 4041227B6 CAF2H 1 5584B720 96 491
21 140 ~l-ιlT098 28 033 S6674 85 972
22 788 0279.' 5344 8 457239650 CAF2H 1 55848720 83 494
23 83 03831 631 41 278404325 65 374
24 -5^7 35636-251 S OOOOOOOOO CAFPhL 1 55848720 64 284
25 ."6 SSbolc017AS 31 536496068 62 327
26 200 1952--2002 8 OOOOOOOOO C F2HL 1 55848720 63 210
27 -S5C "lo-f-εco 43 44217850C 66 958
28 -B6 362069271 8 210360232 CAF2hIι 1 55848720 69 385
29 350 1794r -7 AS I 56","22592 B9 255
30 -2B0 6016-5-32 34 872981631 CA^2HL 1 55840720 92 027
31 132 '_;cfc^ S95 3 00*709559 97 215
32 361 66211H..S7 37 7226S759S C7'F2HL 1 55B46720 109 325
_._. *5S 6;fT20 1 OOOOOOOOO 112 571
34 750 94601''-27AS 43 541363913 CAF2HL 1 55848720 120 144
35 ,'85 aoc ^-os 25 9300471CO 120 440
36 -169 581349359 8 030377840 CAF2I-L 1 5S84e720 119 789
37 1077 130,6C.>70 - 662969489 134 185
38 1605 65320SS60 43 332820801 CAF2HL 1 55848720 135 539
39 333 7SK .,63037 3 OCOOOOOOO 137 425
40 448 584239713 52 027765048 CAF2H 1 5564Θ720 144 043
41 -jB7 2L61^^069AS 37 362634300 143 681
42 256 060171302 40 279714930 CHF2 L 1 55848720 139 83Θ
43 -353 759021671AS 5642400C1 1*4 656
44 0 OOOOOOOOO lO B32272687 141 334
45 1 99 <485 " 20 "2 690870511 C&F2HL 1 55848720 141 660
46 -39" 5454"i 04 2 390581943 141 445
-SP -8B7j'238 43 117430646 CAF2"L X 556*8720 121 630
43 731 S939eC095AS 1 OOOOOOOOO 117 999
49 i 14 3859-^-39 33 S26B13476 CAF2HL 1 55648720 92 421
50 184 018C3'j075 1 OOOOOOOOO 85 *BS
51 ι23 ;570i--50 93 3339501*9 CAF2HL 1 55848720 77 332
52 0 O0OCO---I0 0 050000000 ln>τιersιor. 1 37000000 11 068
£3 n f-OCO-π-OO 8 ooocrooco 31 OOO
Table 8
ASPHERIC CONSTANTS
SURFACE NO SURFACE NO 14
K 2 <* * h 3 5943 c: ' 11 -Rle 017 I 3 41875063e-00S
C? 3 3 ."029r υil C2 1 06207S72e-0ι4
C3 2 7^ 3 747e 015 C3 -2 75870187e-018
C -c r Dg3e t 4g C4 1 25l43795e-022
C5 1 P f.6-320.e-0?3 C5 -1 53842992e-026
Cb 2 !_.-- 2 '7c -" C6 9 B 335165e-031
C7 2 t 1311737e-0 <1 C7 -2 88557010e-035
"6 0 C ' 0006-C1J CB 0 OOOOOOOOe+OOO
C9 0 OO^O^OOOe-OTC C9 0 OOOOOOOOe+OOO
SURFACE NO 6 SURFACE NO 1
K 1 52-9 K 0 ι099
CI - , - ' 9^4c C17 Ci 24105758ε-009
C2 1 85 24618e Oi l C2 7 37348572e-014
C3 1 S;-- 960P CI5 C3 3 SP46043Se 018
C4 2 :2"-"-675e-019 C4 2 55537441e-023
C5 -2 32ιC8876e 023 C5 -1 7β466202e 020
C6 1 1747G944e-0?7 C6 1 62622698e-032
C7 -2 2~f <098e 032 C7 -1 161032666-036
C8 0 00 ιOOOOOe + 000 C8 0 OOOOOOOOe+000
C9 0 CC CϋOGOe-t-OO C9 0 OOOOOOOOe+OOt
SURFACE NO -7 SURFACE NO 43
K 1 0"r K 0 0331
CI -4 04.--50ie-0ι0 CI - 94661761e-010
C2 - 5 ' - -1 ?30e-O 4 C2 1 055037396-01 _•
C3 1 O-1- '813e-038 C3 -1 45ι24835e 01B
C4 _ o .oL ~933e 024 C4 6 -4609756.6-02-.
C5 1 9-_',-487e-0? 7 C5 -2 60450711e-027 re - 5 .1 584<--0 2 C6 7 57276741e-0-2
C7 1 3_."4-628e-036 C7 -7 11474674e-037
CS 0 f ' -f O00c+Cυ" S 0 OOCOCOOOe+COO
C9 0 OJi CvOOOe+OCO C9 0 OOOOOOOOe+OOO
SURFACE : NO -5 SURFACE NO 48
Figure imgf000033_0001
1230e-009
C? 2 6C. 173e-012 C2 1 92491101e-013
C2 - 4 2J"6 635C-016 C3 3 749763936-018 a -3 53-5-144e-020 C4 -4 50566284e-022
C5 3 6ιι. 613e 023 C5 2 4 249474e-026
C6 - 7 3CL2t-628e-027 C6 -8 61661412e-031
C7 1 Ui'.-' 199e 020 C7 1 44171593e-035 ti 0 OjCO-OOOe+000 C6 0 OOOOOOOOe+OOO
C5 C CO OOOe^OOO C9 0 OO OOC Oe+000
SURFACE NO 9
K - ^ -
Ci 3 1- . >B63c 008
C2 0 758e '
C3 6 2r _384c-01d
C* 4" " 035C-0- -
C5 . fe- -576e 024
CC ' 4C .196-029
L~ -2 0- J75 1t;-0_-
CS - Or 3-C00<^0-C 3 0 o-i cooce+ooo Table 9
1/2 FREE
SURFACE RADII THICKNESSES LENSES 193.368 nm DIAMETER
0 0. OOOOOOOOO 23. 98O16O000 1. OOOOOOOO 56.080
2 0. oooc-roc-DO j . 246885384 L710 0.9999B200 61.157 .
2 -7758. 8729"5--|41 8. OOOOOOOOO SI02HL 1.56028900 61.896
3 355. 7 91 - .: i- 57 7. 525172915 HE1S3 0.99971200 63.992
4 1890. 36S6'.:--32AS 8. OOOOOOOOO SI02HL 1.56028900 65.078
5 268. 2132ϊ ύ06 IS . 157771912 HE193 0.9997.1200 68.460
6 3183. 17465434SAS 8. OOOOOOOOO SI02HL 1.56028500 72.301
7 542. 721-1 27S21 25. 226019508 KE1S3 0.99971200 76.281
B -190. 186655474 54. 303344531 SI02HL 1.56028900 78.244
9 -200. f?725--; 4S ϊ . OOOOOOOOO KE193 0.99971200 102.934 0 -1181. 73911-1120 41. 61S0SΪ168 SI02HL 1.56028900 116.315 1 -200. --SS7-..2-S 1. OOOOOOOOO HE193 0.99971200 119.335 2 -345. 801617038 34. 756009233 SI02HL 1.S6026900 122.895 3 -183 ■ .C355-;;-037 1. OCOOOOOOO HE193 C.99971200 125.001 4 468. ■ SS62r-)219 28. , 888366130 SI02HI, 1.5602B900 119.5B3 5 -1579. 3302 --:>' = 4AS 1. OOOOOOOOO HE193 0.99971200 138.410 6 130. .6225-7421 25. ,607493426 SI02H 1.56028900 101.535 7 167. 663753664 1. OOOOOOOOO HE193 0.99971200 96.903 8 109. 5iso;:.s27 33. .485629573 SI02K 1.56028900 8B.871 5 135. .897752065 2 .284753341 HE193 0.59971200 79.284 0 8434. .054206242 8 .OOOOOOOOO SI02H 1.56028900 76.872 1 73. .280373304 30 .508120723 HE193 0.59971200 60.167 2 712. .5170 55 7 ε . OOOOOOOOO SI02HJ- 1.56028900 59.980 3 137. .0479'.-C:i 19AS 41 .376149328 HE193 0.99971200 58.756 4 -120. .1681; 3858 E. . OOOOOOOOO SI02HL 1.56028900 60.070 5 -335. .609951:301 26 .955101014 HE193 0.99971200 64.725 6 -86 .29 3 443 8 .405631441 ST02HI, 1.56028900 65.622 7 -401. .221-i"ή575AS 6 .731819241 HE193 0.99971200 82.38S 8 - 295 . S 283 :. ■'- -.11 33 .017957091 SI02H 1.56028900 84.761 9 -156 .211920854 1 .OOOOOOOOO HΞ193 0.99971200 S3.276
30 -268 .9 5337236 33 .049041389 SI02H 1.56028900 99.716 1 -143. 1 . OOOOOOOOO KE193 0.99971200 303.445 2 472 .6939!;'i029AE 41 .687451272 SI02HL 1.56028900 115.709 3 -346. .217411641 22 .889302349 HE193 0.99971200 116.094
34 -187 .601096847 12 .645469238 SI02HL 1.56028900 115.710
35 -3S9 .KS2656;61 j .OOOOOOOOO HE193 0.99971200 121.777
36 722 .017661882 60 .459509481 SI02HL 1.56028900 125.218
37 -1816 .4327', i5elAS 2*. .260458335 HE193 0.99971200 125.322
38 2199 .260274610 24 .178147653 SI02H 1.56028S00 124.815
39 -1512 .556722835 8 .OOOOOOOOO HE193 0.95971200 124.440
40 0 .OOOOOOOOO 14 .30957B556 HE193 0.99971200 123.088
41 1738 .19639: 601 35 .5S94492B7 SI02KL, 1.5602B900 124.310
42 -429 .6275"0"; 04AS 1 .OOOOOOOOO HE193 0.99971200 124.575
43 179 .5891C-2""S2 59 .6877S3355 SI02HL 1.56028900 115.507
44 S89 .027987"- 43AS 10 .530033379 HE193 0.99971200 105.186
45 116 .621256961 53 .097791469 SI02HL i .56026900 89.320
46 137 .713831650 1 .OOOOOOOOO HE193 0.99971200 67.001
47 93 .226 7 153 9 .505495277 S102HL 1.56026900 62.339
48 0 . OOOOOOOOO 1 .000000545 IMMEP.S 1.56000000 14.735
49 0 . ooooooooo r. . OOOOOOOOO 1. OOOOOOOO 14.020
Table 10
ASPHERIC CONSTANTS
SURFACE NO 4 SURFACE NO 32
K 0 OCCO 0 0000
CI 2 83531001e-nO7 CI - 2 S9168418e-009
C2 99703415e-011 C2 -8 93760219e-014
C3 2. 76850090e-015 C3 -4 25486946e-018
C4 c. 54867122e-019 C4 3 13097668e-022
C5 . r 669047-'7e-024 C5 -1 87333640e-026
C6 b 036624666-027 C6 1 28572875e-030
C7 - 2060360C-031 C7 -3 944717306-035 ce 0 OOOOOGOOs-i 000 C8 0 OOOOOOOOe+OOO
C9 0 OOOOOOOOe+OOO C9 0 OOOOOOOOe+OOO
SURFACE NO 6 SURFACE NO 37
K 0 0000
K 0 OCCυ CI 3 92265908e-005
CI -1 lC706261e-0 7 C2 5 90432031e-014
C2 2 00248321e-011 C3 -4 612732S6e-C18
C3 -1 511303786-015 C4 5 094372B8e-023
C4 3 0S660955e-019
C5 -1 7F658953e-023
C6 3 15835636e-027
C7 -4 23595936e-031
CB 0 OOOOOOCOe+OOO
C9 0 OOOOOOOOe+OOO
SURFACE : I 15
K 0 0000
Ci -9 37S24970e-010
Figure imgf000035_0001
cε 0 OOOOOOOOe+OOO
C9 0
SURFACE ; 23
K 0 0000
Figure imgf000035_0002
SURFACE NO 27
Figure imgf000035_0003
Cb 0 OOOOOOOOe+OOO c c cc-" oc-"re-ιθo:

Claims

Patent Claims
1. Refractive projection objective for projecting a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium which is arranged between a last optical element of the projection objective and the image plane, comprising: a first lens group (LG1 ), following the image plane, with a negative refracting power; a second lens group (LG2), following the first lens group, with a positive refracting power; a third lens group (LG3), following the second lens group, with a negative refracting power; a fourth lens group (LG4), following the third lens group, with a positive refracting power; a fifth lens group (LG5), following the fourth lens group, with a positive refracting power; and a system aperture (5) which is arranged in the region of maximum beam diameter between the fourth and the fifth lens group.
2. Projection objective according to Claim 1 , wherein the system aperture (5) lies between a plane of maximum beam diameter near the image and the image plane (3).
3. Projection objective according to Claim 1 or 2 which has an image- side numerical aperture NA > 0.9, the image-side numerical aperture preferably being at least NA = 1.0.
4. Projection objective according to one of the preceding claims, wherein the projection objective is adapted to an immersion medium (10) which has a refractive index of n > 1.3 at the operating wavelength.
5. Projection objective according to one of the preceding claims, wherein the projection objective has an image-side working distance of between approximately 10 μm and approximately 200 μm, in particular between approximately 20 μm and approximately 100 μm.
6. Projection objective according to one of the preceding claims, wherein a ratio between the focal length of the fourth lens group (LG4) and the focal length of the fifth lens group (LG5) is between approximately 0.9 and approximately 1.1.
7. Projection objective according to one of the preceding claims, wherein a ratio of the magnitudes of the focal lengths of the first lens group (LG1 ) and the fifth lens group (LG5) is between approximately 0.7 and approximately 1.3, in particular between approximately 0.9 and approximately 1.1.
8. Projection objective according to one of the preceding claims, wherein a ratio between the overall length of the projection objective and the focal length of the fifth lens group (LG5) is greater than five, preferably greater than six, in particular greater than eight.
9. Projection objective according to one of the preceding claims, wherein the first lens group (LG1 ) includes at least one aspheric surface, two aspheric surfaces preferably being provided in the first lens group.
10. Projection objective according to one of the preceding claims, wherein at least one aspheric surface is provided in the third lens group (LG3), two aspheric surfaces preferably being provided.
1 1. Projection objective according to one of the preceding claims, wherein at least one aspheric surface is arranged in the first lens group, and/or wherein not more than nine aspheric surfaces are provided, less than seven aspheric surfaces preferably being provided.
12. Projection objective according to one of the preceding claims, wherein at least one meniscus lens (13), convex relative to the object plane, with a negative refracting power is arranged in the near zone of the object plane (2), in particular inside the first lens group (LG1 ).
13. Projection objective according to one of the preceding claims, wherein the second lens group has at least four, preferably at least five or six consecutive lenses (14 to 20) with a positive refracting power.
14. Projection objective according to one of the preceding claims, wherein the second lens group (LG2) has at least one, preferably a plurality of meniscus lenses (14, 15, 16, 17), concave relative to the object plane, with a positive refracting power on an entry side facing the object plane (2), and/or wherein the second lens group has at least one, preferably a plurality of meniscus lenses (19, 20), convex relative to the object plane, with a positive refracting power on the exit side facing the image plane.
15. Projection objective according to one of the preceding claims, wherein the second lens group (LG2) in this sequence has at least one meniscus lens (14, 15, 16, 17), concave relative to the object plane, with a positive refracting power, a biconvex positive lens (18) and at least one meniscus lens (19, 20), concave relative to the image plane, with a positive refracting power.
16. Projection objective according to one of the preceding claims, wherein the third lens group (LG3) has only lenses (21 , 22, 23, 24) with a negative refracting power.
17. Projection objective according to one of the preceding claims, wherein, with reference to a plane (9) of symmetry lying inside the third lens group (LG3), the third lens group is of substantially symmetrical construction, and/or wherein two oppositely curved, concave surfaces directly opposed to one another in the third lens group (LG3) and are surrounded by two concave surfaces which are concave relative to one another.
18. Projection objective according to one of the preceding claims, wherein an exit region, facing the third lens group (LG3), of the second lens group (LG2), and an entry region, following the third lens group, of the fourth lens group (LG4) are constructed substantially symmetrically relative to a plane (9) of symmetry lying inside the third lens group.
19. Projection objective according to one of the preceding claims, wherein the fourth lens group (LG4) has at least one doublet (27, 28, 29, 30) with a biconvex positive lens (27, 29) and a downstream negative meniscus lens (28, 30) with lens surfaces which are concave towards the object, at least two doublets preferably being provided.
20. Projection objective according to one of the preceding claims, wherein in an object-side entry region the fourth lens group (LG4) has at least one meniscus lens (25, 26), concave relative to the object plane (2), with a positive refracting power, a plurality of such meniscus lenses preferably being provided consecutively.
21. Projection objective according to one of the preceding claims, wherein the sine of the maximum incidence angle of the radiation impinging on the optical surfaces is less than 90%, in particular less than 85% of the image-side numerical aperture.
22. Projection objective according to one of the preceding claims, wherein the fifth lens group (LG5) has exclusively lenses with a positive refracting power.
23. Projection objective according to one of the preceding claims, wherein the fifth lens group has at least four positive lenses (31 to 35).
24. Projection objective according to one of the preceding claims, wherein the fifth lens group (LG5) has at least one meniscus lens (33, 34) with a positive refracting power and lens surfaces concave towards the image.
25. Projection objective according to one of the preceding claims, wherein as last optical element the fifth lens group ( G5) has a planoconvex lens (35) which preferably has a spherical entry surface and a substantially flat exit surface.
26. Projection objective according to Claim 25, wherein the planoconvex lens (35) is constructed in a nonhemispherical fashion.
27. Projection objective according to one of the preceding claims, wherein all the lenses consist of the same material, use preferably being made of synthetic quartz glass as lens material for a 193 nm operating wavelength, and/or of calcium fluoride as lens material for a 157 nm wavelength.
28. Projection objective according to one of the preceding claims which is a single-waist system with a belly (6) near the object, a belly (8) remote from the object and a waist (7) therebetween.
29. Projection objective according to one of the preceding claims, wherein the image field diameter is more than 10 mm, in particular more than 20 mm and/or wherein the image field diameter is more than 1.0%, in particular more than 1.5%, of the overall length.
30. Projection objective according to one of the preceding claims, wherein the light conductance is more than approximately 1 %, in particular more than approximately 2% of the overall length.
31. Projection objective according to one of the preceding claims, wherein substantially more lenses are arranged upstream of the system aperture (5) than downstream of the system aperture, preferably at least four times as many.
32. Projection objective according to one of the preceding claims, wherein at least five lenses with a positive refracting power are arranged between the waist and the system aperture (5).
33. Projection objective according to one of the preceding claims, wherein a distance between the waist and the system aperture is at least 26% of the overall length, preferably more than 30% of the overall length.
34. Projection objective according to one of the preceding claims, wherein a maximum rim ray height is at least twice as large as the rim ray height at the location of the narrowest constriction.
35. Projection exposure machine for microlithography, characterized by a refractive projection objective (1 , 1 ', 1 ") in accordance with one of the preceding claims.
36. Method for producing semiconductor components and other finely structured structural elements, having the following steps: providing a mask with a prescribed pattern; illuminating the mask with ultraviolet light of a prescribed wavelength; and projecting an image of the pattern onto a photosensitive substrate, arranged in the region of the image plane of a projection objective, with the aid of a projection objective in accordance with one of the preceding
Claims 1 to 34; an immersion medium arranged between a last optical surface of the projection objective and the substrate being transilluminated during the projection.
PCT/EP2003/001954 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography WO2003077037A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP03717197A EP1485760A1 (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography
JP2003575190A JP2005519348A (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography
AU2003221490A AU2003221490A1 (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography
KR1020047014023A KR100991590B1 (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10210899A DE10210899A1 (en) 2002-03-08 2002-03-08 Refractive projection lens for immersion lithography
DE10210899.4 2002-03-08

Publications (1)

Publication Number Publication Date
WO2003077037A1 true WO2003077037A1 (en) 2003-09-18

Family

ID=27762884

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/EP2002/004846 WO2003077036A1 (en) 2002-03-01 2002-05-03 High-aperture projection lens
PCT/EP2003/001954 WO2003077037A1 (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/004846 WO2003077036A1 (en) 2002-03-01 2002-05-03 High-aperture projection lens

Country Status (8)

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US (4) US6891596B2 (en)
EP (2) EP1483625A1 (en)
JP (2) JP2005519347A (en)
KR (1) KR100991590B1 (en)
CN (1) CN100573222C (en)
AU (2) AU2002312872A1 (en)
DE (1) DE10210899A1 (en)
WO (2) WO2003077036A1 (en)

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JP2005252239A (en) * 2004-01-23 2005-09-15 Air Products & Chemicals Inc Immersion lithographic fluid
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005340757A (en) * 2004-05-22 2005-12-08 Hynix Semiconductor Inc Liquid composite for immersion lithography, lithographing method using the same, immersion lithographing equipment, semiconductor device, and its manufacturing method
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7145630B2 (en) 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7184122B2 (en) 2003-07-24 2007-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
US7193681B2 (en) 2003-09-29 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
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US7209213B2 (en) 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007514192A (en) * 2003-12-15 2007-05-31 カール・ツァイス・エスエムティー・アーゲー Projection objective having a high numerical aperture and a planar end face
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007515660A (en) * 2003-10-22 2007-06-14 カール・ツァイス・エスエムティー・アーゲー Refractive projection objective for immersion lithography
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
JP2007520893A (en) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー Photolithographic method and system using fluid
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7301707B2 (en) 2004-09-03 2007-11-27 Carl Zeiss Smt Ag Projection optical system and method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US7352435B2 (en) 2003-10-15 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7379158B2 (en) 2002-12-10 2008-05-27 Nikon Corporation Exposure apparatus and method for producing device
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
JP2008527403A (en) * 2004-12-30 2008-07-24 カール・ツァイス・エスエムティー・アーゲー Projection optical system
US7414699B2 (en) 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433015B2 (en) 2003-10-15 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7436486B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and device manufacturing method
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
US7453550B2 (en) 2003-02-26 2008-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7466392B2 (en) 2002-12-10 2008-12-16 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7508489B2 (en) 2004-12-13 2009-03-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US7508488B2 (en) 2004-10-13 2009-03-24 Carl Zeiss Smt Ag Projection exposure system and method of manufacturing a miniaturized device
US7522261B2 (en) 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7589820B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and method for producing device
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US7804574B2 (en) 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US7812925B2 (en) 2003-06-19 2010-10-12 Nikon Corporation Exposure apparatus, and device manufacturing method
US7817245B2 (en) 2003-09-29 2010-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7843550B2 (en) 2003-07-25 2010-11-30 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US7855777B2 (en) 2003-07-09 2010-12-21 Nikon Corporation Exposure apparatus and method for manufacturing device
US7879531B2 (en) 2004-01-23 2011-02-01 Air Products And Chemicals, Inc. Immersion lithography fluids
US7894040B2 (en) 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7898643B2 (en) 2003-06-27 2011-03-01 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
US7898645B2 (en) 2003-10-08 2011-03-01 Zao Nikon Co., Ltd. Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US7916272B2 (en) 2003-03-25 2011-03-29 Nikon Corporation Exposure apparatus and device fabrication method
US7924403B2 (en) 2005-01-14 2011-04-12 Asml Netherlands B.V. Lithographic apparatus and device and device manufacturing method
US7924402B2 (en) 2003-09-19 2011-04-12 Nikon Corporation Exposure apparatus and device manufacturing method
US7929111B2 (en) 2003-04-10 2011-04-19 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7982857B2 (en) 2003-12-15 2011-07-19 Nikon Corporation Stage apparatus, exposure apparatus, and exposure method with recovery device having lyophilic portion
US7990516B2 (en) 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
US7993008B2 (en) 2003-08-26 2011-08-09 Nikon Corporation Optical element and exposure apparatus
US7995186B2 (en) 2003-10-08 2011-08-09 Zao Nikon Co., Ltd. Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US8004649B2 (en) 2003-06-19 2011-08-23 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US8004652B2 (en) 2004-10-18 2011-08-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8018657B2 (en) 2003-04-17 2011-09-13 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US8034539B2 (en) 2002-12-10 2011-10-11 Nikon Corporation Exposure apparatus and method for producing device
US8035795B2 (en) 2003-04-11 2011-10-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine
US8040491B2 (en) 2003-06-13 2011-10-18 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US8039807B2 (en) 2003-09-29 2011-10-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8045136B2 (en) 2004-02-02 2011-10-25 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8054447B2 (en) 2003-12-03 2011-11-08 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US8072576B2 (en) 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US8085381B2 (en) 2003-04-11 2011-12-27 Nikon Corporation Cleanup method for optics in immersion lithography using sonic device
US8089610B2 (en) 2003-04-10 2012-01-03 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US8111375B2 (en) 2003-04-07 2012-02-07 Nikon Corporation Exposure apparatus and method for manufacturing device
US8111373B2 (en) 2004-03-25 2012-02-07 Nikon Corporation Exposure apparatus and device fabrication method
US8120763B2 (en) 2002-12-20 2012-02-21 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8120751B2 (en) 2003-07-09 2012-02-21 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US8130361B2 (en) 2003-10-09 2012-03-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
US8203693B2 (en) 2005-04-19 2012-06-19 Asml Netherlands B.V. Liquid immersion lithography system comprising a tilted showerhead relative to a substrate
US8208124B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8218127B2 (en) 2003-07-09 2012-07-10 Nikon Corporation Exposure apparatus and device manufacturing method
US8233135B2 (en) 2004-12-15 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8233133B2 (en) 2003-05-28 2012-07-31 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US8305553B2 (en) 2004-08-18 2012-11-06 Nikon Corporation Exposure apparatus and device manufacturing method
US8330935B2 (en) 2004-01-20 2012-12-11 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US8363206B2 (en) 2006-05-09 2013-01-29 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8451424B2 (en) 2003-07-28 2013-05-28 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US8472001B2 (en) 2003-05-23 2013-06-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8508718B2 (en) 2003-07-08 2013-08-13 Nikon Corporation Wafer table having sensor for immersion lithography
US8520184B2 (en) 2004-06-09 2013-08-27 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device
US8520187B2 (en) 2003-09-03 2013-08-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8547519B2 (en) 2003-11-14 2013-10-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US8860922B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860923B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947637B2 (en) 2003-08-29 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8953144B2 (en) 2003-08-29 2015-02-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US8964164B2 (en) 2003-05-13 2015-02-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9097992B2 (en) 2004-08-19 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9110389B2 (en) 2003-06-11 2015-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US9207543B2 (en) 2004-04-14 2015-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a groove to collect liquid
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US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9465301B2 (en) 2003-12-23 2016-10-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9507270B2 (en) 2004-06-16 2016-11-29 Asml Netherlands B.V. Vacuum system for immersion photolithography
US9623436B2 (en) 2004-05-18 2017-04-18 Asml Netherlands B.V. Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US9746781B2 (en) 2005-01-31 2017-08-29 Nikon Corporation Exposure apparatus and method for producing device
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Families Citing this family (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7203007B2 (en) * 2000-05-04 2007-04-10 Carl Zeiss Smt Ag Projection exposure machine comprising a projection lens
KR100866818B1 (en) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 Projection optical system and exposure apparatus comprising the same
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10258718A1 (en) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projection lens, in particular for microlithography, and method for tuning a projection lens
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
DE10308610B4 (en) * 2003-02-27 2006-04-13 Carl Zeiss Immersion liquid for microscopy in Wasserimmersion
KR20170018113A (en) 2003-04-09 2017-02-15 가부시키가이샤 니콘 Exposure method and apparatus, and device manufacturing method
JP4656057B2 (en) * 2003-04-10 2011-03-23 株式会社ニコン Electro-osmotic element for immersion lithography equipment
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
KR101516140B1 (en) 2003-05-06 2015-05-04 가부시키가이샤 니콘 Projection optical system, and exposure apparatus and exposure method
CN100437358C (en) * 2003-05-15 2008-11-26 株式会社尼康 Exposure apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1639391A4 (en) * 2003-07-01 2009-04-29 Nikon Corp Using isotopically specified fluids as optical elements
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7551361B2 (en) 2003-09-09 2009-06-23 Carl Zeiss Smt Ag Lithography lens system and projection exposure system provided with at least one lithography lens system of this type
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
CN1860585B (en) * 2003-09-29 2010-04-28 株式会社尼康 Liquid immersion type lens system and projection exposure device
US7056646B1 (en) 2003-10-01 2006-06-06 Advanced Micro Devices, Inc. Use of base developers as immersion lithography fluid
ITMI20031914A1 (en) * 2003-10-03 2005-04-04 Solvay Solexis Spa Perfluoropolyethers.
JP2005136364A (en) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd Substrate carrying device, exposure device and device manufacturing method
TW201834020A (en) 2003-10-28 2018-09-16 日商尼康股份有限公司 Optical illumination device, exposure device, exposure method and device manufacturing method
US7113259B2 (en) * 2003-10-31 2006-09-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI612338B (en) 2003-11-20 2018-01-21 尼康股份有限公司 Optical illuminating apparatus, exposure device, exposure method, and device manufacturing method
WO2005054956A2 (en) * 2003-12-02 2005-06-16 Carl Zeiss Smt Ag Projection optical system
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
WO2005057635A1 (en) * 2003-12-15 2005-06-23 Nikon Corporation Projection exposure apparatus, stage apparatus, and exposure method
KR100965330B1 (en) 2003-12-15 2010-06-22 칼 짜이스 에스엠티 아게 Objective as a microlithography projection objective with at least one liquid lens
US7466489B2 (en) * 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
JP5102492B2 (en) * 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー Objective lens for microlithography projection with crystal elements
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4429023B2 (en) * 2004-01-07 2010-03-10 キヤノン株式会社 Exposure apparatus and device manufacturing method
US20080151365A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
CN101727021A (en) * 2004-02-13 2010-06-09 卡尔蔡司Smt股份公司 Projection objective for a microlithographic projection exposure apparatus
CN100592210C (en) * 2004-02-13 2010-02-24 卡尔蔡司Smt股份公司 Projection objective for a microlithographic projection exposure apparatus
US7741012B1 (en) 2004-03-01 2010-06-22 Advanced Micro Devices, Inc. Method for removal of immersion lithography medium in immersion lithography processes
US7215431B2 (en) * 2004-03-04 2007-05-08 Therma-Wave, Inc. Systems and methods for immersion metrology
US8488102B2 (en) * 2004-03-18 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
JP4510494B2 (en) * 2004-03-29 2010-07-21 キヤノン株式会社 Exposure equipment
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
US7400460B2 (en) 2004-04-26 2008-07-15 Carl Zeiss Smt Ag Method for connection of an optical element to a mount structure
US20060244938A1 (en) * 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US8107162B2 (en) 2004-05-17 2012-01-31 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101199076B1 (en) * 2004-06-04 2012-11-07 칼 짜이스 에스엠티 게엠베하 Projection system with compensation of intensity variations and compensation element therefor
KR20070026603A (en) * 2004-06-10 2007-03-08 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
DE102004031688B4 (en) * 2004-06-30 2006-06-14 Infineon Technologies Ag Method for adapting structural dimensions in the photolithographic projection of a pattern of structural elements onto a semiconductor wafer
EP1626571A1 (en) * 2004-08-13 2006-02-15 STMicroelectronics Limited Imaging assembly
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
US7529030B2 (en) * 2004-09-06 2009-05-05 Olympus Corporation Optical apparatus with optical element made of a medium exhibiting negative refraction
US20060060653A1 (en) * 2004-09-23 2006-03-23 Carl Wittenberg Scanner system and method for simultaneously acquiring data images from multiple object planes
WO2006037444A2 (en) * 2004-10-05 2006-04-13 Carl-Zeiss Smt Ag Microlithographic projection exposure apparatus
US7128427B2 (en) * 2004-11-05 2006-10-31 Sematech, Inc. Method and apparatus for fluid handling in immersion lithography
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060158615A1 (en) * 2005-01-18 2006-07-20 Williamson David M Catadioptric 1x projection system and method
US7282701B2 (en) * 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102005017752B4 (en) 2005-04-15 2016-08-04 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass optical component, method of making the component and use thereof
DE102006013560A1 (en) * 2005-04-19 2006-10-26 Carl Zeiss Smt Ag Projection lens for micro lithographic projection illumination system, has lens , to characterizes symmetry axis of another lens by rotation of orientation of crystal axes, where lenses are separated by gap filled with liquid
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
TWI454731B (en) 2005-05-27 2014-10-01 Zeiss Carl Smt Gmbh Method for improving the imaging properties of a projection objective, and such a projection objective
US20070013882A1 (en) * 2005-06-07 2007-01-18 Carl Zeiss Smt Ag Method of manufacturing projection objectives and set of projection objectives manufactured by that method
US7385673B2 (en) * 2005-06-10 2008-06-10 International Business Machines Corporation Immersion lithography with equalized pressure on at least projection optics component and wafer
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
WO2007020004A1 (en) 2005-08-17 2007-02-22 Carl Zeiss Smt Ag Projection objective and method for optimizing a system diaphragm of a projection objective
US8202460B2 (en) * 2005-09-22 2012-06-19 International Business Machines Corporation Microelectronic substrate having removable edge extension element
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (en) * 2005-12-06 2007-10-22 엘지전자 주식회사 Power supply apparatus and method for line conection type fuel cell system
WO2007071569A1 (en) * 2005-12-23 2007-06-28 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US7893047B2 (en) * 2006-03-03 2011-02-22 Arch Chemicals, Inc. Biocide composition comprising pyrithione and pyrrole derivatives
US8072577B2 (en) 2006-06-05 2011-12-06 Macronix International Co., Ltd. Lithography systems and processes
EP1906251A1 (en) * 2006-09-26 2008-04-02 Carl Zeiss SMT AG Projection exposure method and projection exposure system
US20080084549A1 (en) * 2006-10-09 2008-04-10 Rottmayer Robert E High refractive index media for immersion lithography and method of immersion lithography using same
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US20080259308A1 (en) * 2007-04-18 2008-10-23 Carl Zeiss Smt Ag Projection objective for microlithography
JP2010527160A (en) * 2007-05-14 2010-08-05 カール・ツァイス・エスエムティー・アーゲー Projection objective and projection exposure apparatus for microlithography
US7760425B2 (en) * 2007-09-05 2010-07-20 Carl Zeiss Smt Ag Chromatically corrected catadioptric objective and projection exposure apparatus including the same
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5013119B2 (en) * 2007-09-20 2012-08-29 信越化学工業株式会社 Pattern forming method and resist material used therefor
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus, and device manufacturing method
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CA2784148A1 (en) * 2009-12-28 2011-07-28 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
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US8476004B2 (en) 2011-06-27 2013-07-02 United Microelectronics Corp. Method for forming photoresist patterns
DE102012006244A1 (en) * 2012-03-21 2013-09-26 Jenoptik Optical Systems Gmbh Color-corrected F-theta lens for laser material processing
KR101407076B1 (en) * 2012-05-24 2014-06-13 주식회사 비엘시스템 exposure apparatus for lithography printer using near-infrared ray
US8701052B1 (en) 2013-01-23 2014-04-15 United Microelectronics Corp. Method of optical proximity correction in combination with double patterning technique
US8627242B1 (en) 2013-01-30 2014-01-07 United Microelectronics Corp. Method for making photomask layout
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US9230812B2 (en) 2013-05-22 2016-01-05 United Microelectronics Corp. Method for forming semiconductor structure having opening
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CN109581622B (en) 2017-09-29 2020-12-04 上海微电子装备(集团)股份有限公司 Projection objective
CN113900227B (en) * 2021-10-09 2022-07-05 中国科学院苏州生物医学工程技术研究所 Objective lens with large field of view and high resolution broadband
CN114563866B (en) * 2022-03-14 2024-02-20 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) Projection objective system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023231A1 (en) * 1979-07-27 1981-02-04 Tabarelli, Werner, Dr. Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
EP1094350A2 (en) * 1999-10-21 2001-04-25 Carl Zeiss Optical projection lens system
EP1139138A1 (en) * 1999-09-29 2001-10-04 Nikon Corporation Projection exposure method and apparatus and projection optical system
US20020005938A1 (en) * 2000-05-30 2002-01-17 Nikon Corporation Projection optical system, exposure apparatus incorporating this projection optical system, and manufacturing method for micro devices using the exposure apparatus

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JP2753930B2 (en) 1992-11-27 1998-05-20 キヤノン株式会社 Immersion type projection exposure equipment
JP3747951B2 (en) 1994-11-07 2006-02-22 株式会社ニコン Catadioptric optics
DE4417489A1 (en) 1994-05-19 1995-11-23 Zeiss Carl Fa High-aperture catadioptric reduction lens for microlithography
US6631036B2 (en) 1996-09-26 2003-10-07 Carl-Zeiss-Stiftung Catadioptric objective
US6169627B1 (en) 1996-09-26 2001-01-02 Carl-Zeiss-Stiftung Catadioptric microlithographic reduction objective
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3747566B2 (en) * 1997-04-23 2006-02-22 株式会社ニコン Immersion exposure equipment
JPH116957A (en) 1997-04-25 1999-01-12 Nikon Corp Projection optical system, projection exposure system and projection exposure method
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6700645B1 (en) 1998-01-22 2004-03-02 Nikon Corporation Projection optical system and exposure apparatus and method
WO1999049504A1 (en) * 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
US6097537A (en) 1998-04-07 2000-08-01 Nikon Corporation Catadioptric optical system
US5986824A (en) * 1998-06-04 1999-11-16 Nikon Corporation Large NA projection lens system with aplanatic lens element for excimer laser lithography
DE69933973T2 (en) 1998-07-29 2007-06-28 Carl Zeiss Smt Ag CATADIOPRIC OPTICAL SYSTEM AND EQUIPPED EXPOSURE DEVICE
DE19855108A1 (en) 1998-11-30 2000-05-31 Zeiss Carl Fa Microlithographic reduction lens, projection exposure system and method
EP1006388A3 (en) 1998-11-30 2002-05-02 Carl Zeiss Reduction projection objective lens for microlithography
JP3423644B2 (en) 1999-06-14 2003-07-07 キヤノン株式会社 Projection optical system and projection exposure apparatus using the same
US6867922B1 (en) * 1999-06-14 2005-03-15 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus using the same
JP2001023887A (en) 1999-07-09 2001-01-26 Nikon Corp Projection optical system, projection aligner equipped therewith, and exposing method
WO2001023933A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
TW448307B (en) 1999-12-21 2001-08-01 Zeiss Stiftung Optical projection system
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
TW538256B (en) * 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
JP2001228401A (en) * 2000-02-16 2001-08-24 Canon Inc Projection optical system, projection aligner by this projection optical system and method for manufacturing device
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
US6486940B1 (en) 2000-07-21 2002-11-26 Svg Lithography Systems, Inc. High numerical aperture catadioptric lens
JP4245286B2 (en) 2000-10-23 2009-03-25 株式会社ニコン Catadioptric optical system and exposure apparatus provided with the optical system
KR100866818B1 (en) 2000-12-11 2008-11-04 가부시키가이샤 니콘 Projection optical system and exposure apparatus comprising the same
JP2002244035A (en) 2000-12-11 2002-08-28 Nikon Corp Projection optical system and exposure device provided with it
JP2002323653A (en) 2001-02-23 2002-11-08 Nikon Corp Projection optical system, projection exposure apparatus, and projection exposure method
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
JP2003185920A (en) 2001-12-18 2003-07-03 Nikon Corp Imaging optical system and projection aligner
JP4016179B2 (en) * 2002-02-28 2007-12-05 ソニー株式会社 Exposure apparatus and converging lens control method
AU2003208872A1 (en) 2002-03-01 2003-09-16 Carl Zeiss Smt Ag Refractive projection lens with a middle part
DE10210899A1 (en) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection lens for immersion lithography
JP3982362B2 (en) 2002-08-23 2007-09-26 住友電気工業株式会社 Optical data link
JP2005536775A (en) 2002-08-23 2005-12-02 株式会社ニコン Projection optical system, photolithography method and exposure apparatus, and method using exposure apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023231A1 (en) * 1979-07-27 1981-02-04 Tabarelli, Werner, Dr. Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
EP1139138A1 (en) * 1999-09-29 2001-10-04 Nikon Corporation Projection exposure method and apparatus and projection optical system
EP1094350A2 (en) * 1999-10-21 2001-04-25 Carl Zeiss Optical projection lens system
US20020005938A1 (en) * 2000-05-30 2002-01-17 Nikon Corporation Projection optical system, exposure apparatus incorporating this projection optical system, and manufacturing method for micro devices using the exposure apparatus

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KAWATA H ET AL: "FABRICATION OF 0.2 MM FINE PATTERNS USING OPTICAL PROJECTION LITHOGRAPHY WITH AN OIL IMMERSION LENS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 31, no. 12B, PART 1, 1 December 1992 (1992-12-01), pages 4174 - 4177, XP000415418, ISSN: 0021-4922 *
KAWATA H ET AL: "OPTICAL PROJECTION LITHOGRAPHY USING LENSES WITH NUMERICAL APERTURES GREATER THAN UNITY", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 9, no. 1 - 4, 1 May 1989 (1989-05-01), pages 31 - 36, XP000034346, ISSN: 0167-9317 *
ULRICH W ET AL: "TRENDS IN OPTICAL DESIGN OF PROJECTION LENSES FOR UV-AND EUV-LITHOGRAPHY", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 4146, 3 August 2000 (2000-08-03), pages 13 - 24, XP008016224 *

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KR101028938B1 (en) * 2003-10-22 2011-04-12 칼 짜이스 에스엠티 게엠베하 Refractive projection objective for immersion lithography
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JP2005252239A (en) * 2004-01-23 2005-09-15 Air Products & Chemicals Inc Immersion lithographic fluid
US8007986B2 (en) 2004-01-23 2011-08-30 Air Products And Chemicals, Inc. Immersion lithography fluids
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