WO2003083522A3 - System and method of broad band optical end point detection for film change indication - Google Patents
System and method of broad band optical end point detection for film change indication Download PDFInfo
- Publication number
- WO2003083522A3 WO2003083522A3 PCT/US2003/009666 US0309666W WO03083522A3 WO 2003083522 A3 WO2003083522 A3 WO 2003083522A3 US 0309666 W US0309666 W US 0309666W WO 03083522 A3 WO03083522 A3 WO 03083522A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- end point
- point detection
- broad band
- band optical
- change indication
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000001514 detection method Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 238000001228 spectrum Methods 0.000 abstract 7
- 238000007517 polishing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003220583A AU2003220583A1 (en) | 2002-03-29 | 2003-03-26 | System and method of broad band optical end point detection for film change indication |
KR1020047015393A KR100971836B1 (en) | 2002-03-29 | 2003-03-26 | System and method of broad band optical end point detection for film change indication |
JP2003580901A JP4789415B2 (en) | 2002-03-29 | 2003-03-26 | Broadband optical endpoint detection system and method for indicating film changes |
EP03716897A EP1490898A4 (en) | 2002-03-29 | 2003-03-26 | System and method of broad band optical end point detection for film change indication |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/112,425 US6806948B2 (en) | 2002-03-29 | 2002-03-29 | System and method of broad band optical end point detection for film change indication |
US10/112,425 | 2002-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003083522A2 WO2003083522A2 (en) | 2003-10-09 |
WO2003083522A3 true WO2003083522A3 (en) | 2003-12-04 |
Family
ID=28453326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/009666 WO2003083522A2 (en) | 2002-03-29 | 2003-03-26 | System and method of broad band optical end point detection for film change indication |
Country Status (8)
Country | Link |
---|---|
US (2) | US6806948B2 (en) |
EP (1) | EP1490898A4 (en) |
JP (1) | JP4789415B2 (en) |
KR (1) | KR100971836B1 (en) |
CN (1) | CN100367468C (en) |
AU (1) | AU2003220583A1 (en) |
TW (1) | TW588154B (en) |
WO (1) | WO2003083522A2 (en) |
Families Citing this family (51)
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US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
US7009281B2 (en) * | 2003-03-14 | 2006-03-07 | Lam Corporation | Small volume process chamber with hot inner surfaces |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
US20050026542A1 (en) * | 2003-07-31 | 2005-02-03 | Tezer Battal | Detection system for chemical-mechanical planarization tool |
JP4467571B2 (en) * | 2003-09-19 | 2010-05-26 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for detecting an electroless deposition endpoint |
US20060062897A1 (en) * | 2004-09-17 | 2006-03-23 | Applied Materials, Inc | Patterned wafer thickness detection system |
KR101324644B1 (en) * | 2005-08-22 | 2013-11-01 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
US7409260B2 (en) * | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
US8392012B2 (en) * | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
US7406394B2 (en) | 2005-08-22 | 2008-07-29 | Applied Materials, Inc. | Spectra based endpointing for chemical mechanical polishing |
US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
US7764377B2 (en) | 2005-08-22 | 2010-07-27 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
US20080099436A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
US20080099435A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
US20080176149A1 (en) * | 2006-10-30 | 2008-07-24 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US7998358B2 (en) | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
US7444198B2 (en) * | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
JP5654753B2 (en) | 2007-02-23 | 2015-01-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Determination of polishing end point using spectrum |
US7840375B2 (en) * | 2007-04-02 | 2010-11-23 | Applied Materials, Inc. | Methods and apparatus for generating a library of spectra |
CN101458445B (en) * | 2007-12-11 | 2012-04-25 | 中芯国际集成电路制造(上海)有限公司 | Apparatus and method for detecting etching terminal |
US7879732B2 (en) * | 2007-12-18 | 2011-02-01 | Chartered Semiconductor Manufacturing Ltd. | Thin film etching method and semiconductor device fabrication using same |
US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
US20100041316A1 (en) * | 2008-08-14 | 2010-02-18 | Yulin Wang | Method for an improved chemical mechanical polishing system |
JP5675617B2 (en) | 2008-09-04 | 2015-02-25 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Polishing speed adjustment using spectral monitoring of substrates during processing |
WO2010062497A2 (en) * | 2008-10-27 | 2010-06-03 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
US8352061B2 (en) | 2008-11-14 | 2013-01-08 | Applied Materials, Inc. | Semi-quantitative thickness determination |
CN101954621B (en) * | 2009-07-16 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Method for judging grinding terminal of chemical mechanical grinding process |
CN102483320B (en) * | 2009-10-13 | 2014-04-02 | 浜松光子学株式会社 | Film thickness measurement device and film thickness measurement method |
JP5968783B2 (en) * | 2009-11-03 | 2016-08-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | End point method using the relationship between peak position and time in spectral contour plots |
JP5612945B2 (en) * | 2010-07-23 | 2014-10-22 | 株式会社荏原製作所 | Method and apparatus for monitoring progress of substrate polishing |
US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
JP2014500613A (en) | 2010-10-15 | 2014-01-09 | アプライド マテリアルズ インコーポレイテッド | Construction of spectral library for optical monitoring |
US20120100781A1 (en) * | 2010-10-20 | 2012-04-26 | Jimin Zhang | Multiple matching reference spectra for in-situ optical monitoring |
JP5853382B2 (en) * | 2011-03-11 | 2016-02-09 | ソニー株式会社 | Semiconductor device manufacturing method and electronic device manufacturing method |
KR101877468B1 (en) | 2011-12-29 | 2018-07-12 | 삼성전자주식회사 | System for broadband illumination and method of generating the broadband illumination |
US9221147B2 (en) | 2012-10-23 | 2015-12-29 | Applied Materials, Inc. | Endpointing with selective spectral monitoring |
US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
US20140224425A1 (en) * | 2013-02-13 | 2014-08-14 | Kabushiki Kaisha Toshiba | Film thickness monitoring method, film thickness monitoring device, and semiconductor manufacturing apparatus |
US10012494B2 (en) | 2013-10-25 | 2018-07-03 | Applied Materials, Inc. | Grouping spectral data from polishing substrates |
CN105336641B (en) * | 2014-06-20 | 2018-02-02 | 中芯国际集成电路制造(上海)有限公司 | The weighting calibration method of CMP terminal detecting systems |
JP6623685B2 (en) * | 2015-10-29 | 2019-12-25 | セイコーエプソン株式会社 | Measuring device and printing device |
JP7023063B2 (en) * | 2017-08-08 | 2022-02-21 | 株式会社荏原製作所 | Substrate polishing equipment and method |
CN107617970A (en) * | 2017-10-26 | 2018-01-23 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | A kind of detecting system of polishing wafer terminal |
JP7068831B2 (en) * | 2018-01-18 | 2022-05-17 | 株式会社荏原製作所 | Polishing equipment |
TWI704093B (en) * | 2019-05-09 | 2020-09-11 | 辛耘企業股份有限公司 | Treatment liquid container |
JP7389718B2 (en) | 2020-06-29 | 2023-11-30 | 株式会社荏原製作所 | Computer-readable recording medium that records a polishing method, polishing device, and program |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077452A (en) * | 1992-09-17 | 2000-06-20 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US6106662A (en) * | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
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FR2677473B1 (en) * | 1991-06-05 | 1995-04-07 | Telemecanique | ARBITRATION PROCESS AND BUS FOR SERIAL DATA TRANSMISSION. |
US5271274A (en) * | 1991-08-14 | 1993-12-21 | The Board Of Trustees Of The Leland Stanford Junior University | Thin film process monitoring techniques using acoustic waves |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
TW320591B (en) | 1995-04-26 | 1997-11-21 | Fujitsu Ltd | |
US6849153B2 (en) * | 1998-04-16 | 2005-02-01 | Siemens Aktiengesellschaft | Removal of post-rie polymer on A1/CU metal line |
JP3183259B2 (en) * | 1998-06-03 | 2001-07-09 | 日本電気株式会社 | Semiconductor wafer polishing state monitoring apparatus and polishing end point detecting method |
US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
US6186865B1 (en) * | 1998-10-29 | 2001-02-13 | Lam Research Corporation | Apparatus and method for performing end point detection on a linear planarization tool |
JP3800942B2 (en) * | 2000-04-26 | 2006-07-26 | 日本電気株式会社 | Semiconductor wafer polishing end point detection apparatus and method |
JP2004514273A (en) * | 2000-07-31 | 2004-05-13 | エイエスエムエル ユーエス インコーポレイテッド | In-situ method and apparatus for endpoint detection in chemical mechanical polishing |
US6676482B2 (en) * | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
-
2002
- 2002-03-29 US US10/112,425 patent/US6806948B2/en not_active Expired - Fee Related
-
2003
- 2003-03-26 JP JP2003580901A patent/JP4789415B2/en not_active Expired - Lifetime
- 2003-03-26 AU AU2003220583A patent/AU2003220583A1/en not_active Abandoned
- 2003-03-26 KR KR1020047015393A patent/KR100971836B1/en active IP Right Grant
- 2003-03-26 CN CNB038074222A patent/CN100367468C/en not_active Expired - Lifetime
- 2003-03-26 WO PCT/US2003/009666 patent/WO2003083522A2/en active Application Filing
- 2003-03-26 EP EP03716897A patent/EP1490898A4/en not_active Withdrawn
- 2003-03-28 TW TW092107218A patent/TW588154B/en not_active IP Right Cessation
- 2003-11-24 US US10/721,136 patent/US7099013B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077452A (en) * | 1992-09-17 | 2000-06-20 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US6106662A (en) * | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
Also Published As
Publication number | Publication date |
---|---|
US6806948B2 (en) | 2004-10-19 |
JP2005522025A (en) | 2005-07-21 |
US20040165177A1 (en) | 2004-08-26 |
AU2003220583A8 (en) | 2003-10-13 |
CN100367468C (en) | 2008-02-06 |
EP1490898A2 (en) | 2004-12-29 |
TW200401102A (en) | 2004-01-16 |
US7099013B2 (en) | 2006-08-29 |
KR100971836B1 (en) | 2010-07-22 |
AU2003220583A1 (en) | 2003-10-13 |
US20030184732A1 (en) | 2003-10-02 |
JP4789415B2 (en) | 2011-10-12 |
EP1490898A4 (en) | 2005-06-15 |
TW588154B (en) | 2004-05-21 |
WO2003083522A2 (en) | 2003-10-09 |
KR20040095340A (en) | 2004-11-12 |
CN1643662A (en) | 2005-07-20 |
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