WO2003092153A3 - Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects - Google Patents

Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects Download PDF

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Publication number
WO2003092153A3
WO2003092153A3 PCT/US2003/012259 US0312259W WO03092153A3 WO 2003092153 A3 WO2003092153 A3 WO 2003092153A3 US 0312259 W US0312259 W US 0312259W WO 03092153 A3 WO03092153 A3 WO 03092153A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory effects
bias circuit
amplifier
power amplifier
minimization
Prior art date
Application number
PCT/US2003/012259
Other languages
French (fr)
Other versions
WO2003092153A2 (en
Inventor
Ahmad Khanifar
Nikolai Maslennikov
Gareth Spiller
Original Assignee
Powerwave Technologies Inc
Ahmad Khanifar
Nikolai Maslennikov
Gareth Spiller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerwave Technologies Inc, Ahmad Khanifar, Nikolai Maslennikov, Gareth Spiller filed Critical Powerwave Technologies Inc
Priority to AT03726376T priority Critical patent/ATE543252T1/en
Priority to CA2483107A priority patent/CA2483107C/en
Priority to AU2003228615A priority patent/AU2003228615A1/en
Priority to EP03726376A priority patent/EP1576724B1/en
Publication of WO2003092153A2 publication Critical patent/WO2003092153A2/en
Publication of WO2003092153A3 publication Critical patent/WO2003092153A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3223—Modifications of amplifiers to reduce non-linear distortion using feed-forward
    • H03F1/3229—Modifications of amplifiers to reduce non-linear distortion using feed-forward using a loop for error extraction and another loop for error subtraction
    • H03F1/3235—Modifications of amplifiers to reduce non-linear distortion using feed-forward using a loop for error extraction and another loop for error subtraction using a pilot signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/12—A bias circuit for some stages being shown using transmission lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
    • H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
    • H03F2201/3209—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion the amplifier comprising means for compensating memory effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
    • H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
    • H03F2201/3224—Predistortion being done for compensating memory effects

Abstract

An RF power amplifier (10) having reduced memory effects is disclosed. This is achieved by a novel design of the DC supply feed network (26) to achieve low impedance across video frequencies, whilst maintaining the correct RF output matching. One or more transmission zeros are provided in the bias circuit transfer function, which are positioned in the video bandwidth so as to provide low and relatively constant impedance across the video bandwidth. Also, a parallel Dc feed line (68, 69) may be employed to reduce impedance across the video bandwidth. The reduction in memory effects allows improved performance of predistortion linearization techniques and an implementation in a feed forward amplifier (110) employing predistortion linearization is also disclosed.
PCT/US2003/012259 2002-04-24 2003-04-22 Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects WO2003092153A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT03726376T ATE543252T1 (en) 2002-04-24 2003-04-22 RF POWER AMPLIFIER WITH BIASING CIRCUIT TOPOLOGIES TO MINIMIZE RF AMPLIFIER MEMORY EFFECTS
CA2483107A CA2483107C (en) 2002-04-24 2003-04-22 Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects
AU2003228615A AU2003228615A1 (en) 2002-04-24 2003-04-22 Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects
EP03726376A EP1576724B1 (en) 2002-04-24 2003-04-22 Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US37506902P 2002-04-24 2002-04-24
US60/375,069 2002-04-24
US37586402P 2002-04-26 2002-04-26
US60/375,864 2002-04-26
US10/410,457 US7034620B2 (en) 2002-04-24 2003-04-08 RF power amplifier employing bias circuit topologies for minimization of RF amplifier memory effects
US10/410,457 2003-04-08

Publications (2)

Publication Number Publication Date
WO2003092153A2 WO2003092153A2 (en) 2003-11-06
WO2003092153A3 true WO2003092153A3 (en) 2008-04-24

Family

ID=29716114

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/012259 WO2003092153A2 (en) 2002-04-24 2003-04-22 Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects

Country Status (6)

Country Link
US (2) US7034620B2 (en)
EP (1) EP1576724B1 (en)
AT (1) ATE543252T1 (en)
AU (1) AU2003228615A1 (en)
CA (1) CA2483107C (en)
WO (1) WO2003092153A2 (en)

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US7692427B2 (en) * 2006-05-09 2010-04-06 Wisconsin Alumni Research Foundation Magnetic resonance imaging RF coil decoupling circuit
US8605814B2 (en) * 2007-10-10 2013-12-10 Crestcom, Inc. Distortion-compensated RF transmitter and method therefor
US8064851B2 (en) * 2008-03-06 2011-11-22 Crestcom, Inc. RF transmitter with bias-signal-induced distortion compensation and method therefor
WO2009118824A1 (en) * 2008-03-25 2009-10-01 三菱電機株式会社 Low distortion amplifier and doherty amplifier using low distortion amplifier
WO2013191757A1 (en) * 2012-06-18 2013-12-27 Massachusetts Institute Of Technology Inverter/power amplifier with capacitive energy transfer and related techniques
US9634577B2 (en) 2008-11-11 2017-04-25 Massachusetts Institute Of Technology Inverter/power amplifier with capacitive energy transfer and related techniques
JP5161856B2 (en) * 2009-10-07 2013-03-13 株式会社エヌ・ティ・ティ・ドコモ Bias circuit
US8143951B2 (en) 2010-07-08 2012-03-27 Telefonaktiebolaget L M Ericsson (Publ) Broadband transistor bias network
US8615208B2 (en) 2010-11-02 2013-12-24 Crestcom, Inc. Transmitter linearized in response to signal magnitude derivative parameter and method therefor
US8489047B2 (en) 2010-11-02 2013-07-16 Crestcom, Inc. Transmitter linearized using bias deviation gain adjustment and method therefor
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US8611459B2 (en) 2012-02-29 2013-12-17 Crestcom, Inc. Transmitter linearized using look-up table with unadaptable data and method therefor
US8624676B2 (en) 2012-03-08 2014-01-07 Telefonaktiebolaget L M Ericsson (Publ) Broadband transistor bias network
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US9635626B1 (en) 2015-10-30 2017-04-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Power amplifying apparatus and method using same
US9991331B2 (en) 2016-09-26 2018-06-05 Micron Technology, Inc. Apparatuses and methods for semiconductor circuit layout
KR20180081317A (en) 2017-01-06 2018-07-16 삼성전자주식회사 Power amplifier device and terminal or base station including the power amplifier device
US10281510B1 (en) * 2017-04-05 2019-05-07 Christos Tsironis Load pull method for transistors driven by modulated signal
KR20200012199A (en) * 2018-07-26 2020-02-05 삼성전자주식회사 Apparatus and method for amplifying transmission signals in wireless communication system
CN110838823A (en) * 2018-08-15 2020-02-25 苏州能讯微波集成电路有限公司 Power amplification system with low memory effect and power amplifier
US11616295B2 (en) 2019-03-12 2023-03-28 Epirus, Inc. Systems and methods for adaptive generation of high power electromagnetic radiation and their applications
US11211703B2 (en) 2019-03-12 2021-12-28 Epirus, Inc. Systems and methods for dynamic biasing of microwave amplifier
US11658410B2 (en) 2019-03-12 2023-05-23 Epirus, Inc. Apparatus and method for synchronizing power circuits with coherent RF signals to form a steered composite RF signal
US11469722B2 (en) 2020-06-22 2022-10-11 Epirus, Inc. Systems and methods for modular power amplifiers
US20210399700A1 (en) 2020-06-22 2021-12-23 Epirus, Inc. Systems and methods for modular power amplifiers
WO2022006385A2 (en) * 2020-07-01 2022-01-06 Macom Technology Solutions Holdings, Inc. Active bias circuit

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Also Published As

Publication number Publication date
US7106134B2 (en) 2006-09-12
CA2483107A1 (en) 2003-11-06
CA2483107C (en) 2010-09-21
AU2003228615A1 (en) 2003-11-10
US20030227330A1 (en) 2003-12-11
EP1576724B1 (en) 2012-01-25
EP1576724A2 (en) 2005-09-21
US20060087374A1 (en) 2006-04-27
US7034620B2 (en) 2006-04-25
WO2003092153A2 (en) 2003-11-06
EP1576724A4 (en) 2006-10-04
ATE543252T1 (en) 2012-02-15
AU2003228615A8 (en) 2008-06-12

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