WO2003094218A3 - Method of growing monocrystalline oxide having a semiconductor device thereon - Google Patents
Method of growing monocrystalline oxide having a semiconductor device thereon Download PDFInfo
- Publication number
- WO2003094218A3 WO2003094218A3 PCT/US2003/013008 US0313008W WO03094218A3 WO 2003094218 A3 WO2003094218 A3 WO 2003094218A3 US 0313008 W US0313008 W US 0313008W WO 03094218 A3 WO03094218 A3 WO 03094218A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- monocrystalline
- layer
- grown
- oxide
- metal oxide
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004502342A JP2005524977A (en) | 2002-05-03 | 2003-04-24 | Single crystal oxide with semiconductor element mounted on it |
KR10-2004-7017683A KR20040108771A (en) | 2002-05-03 | 2003-04-24 | Method of growing monocrystalline oxide having a semiconductor device thereon |
AU2003231131A AU2003231131A1 (en) | 2002-05-03 | 2003-04-24 | Method of growing monocrystalline oxide having a semiconductor device thereon |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/137,383 | 2002-05-03 | ||
US10/137,383 US6916717B2 (en) | 2002-05-03 | 2002-05-03 | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003094218A2 WO2003094218A2 (en) | 2003-11-13 |
WO2003094218A3 true WO2003094218A3 (en) | 2004-01-22 |
Family
ID=29269077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/013008 WO2003094218A2 (en) | 2002-05-03 | 2003-04-24 | Method of growing monocrystalline oxide having a semiconductor device thereon |
Country Status (6)
Country | Link |
---|---|
US (1) | US6916717B2 (en) |
JP (1) | JP2005524977A (en) |
KR (1) | KR20040108771A (en) |
CN (1) | CN100359648C (en) |
AU (1) | AU2003231131A1 (en) |
WO (1) | WO2003094218A2 (en) |
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JP4155795B2 (en) * | 2002-10-31 | 2008-09-24 | 住友電気工業株式会社 | Method for forming oxide high-temperature superconductor thin film on substrate via intermediate layer |
JP3868407B2 (en) * | 2003-07-25 | 2007-01-17 | ローム株式会社 | Method for forming compound semiconductor layer |
DE10352655A1 (en) * | 2003-11-11 | 2005-06-30 | Universität Augsburg | Heteroepitaxial layer and process for its preparation |
JP4611127B2 (en) * | 2004-06-14 | 2011-01-12 | パナソニック株式会社 | Electromechanical signal selection element |
US20060011129A1 (en) * | 2004-07-14 | 2006-01-19 | Atomic Energy Council - Institute Of Nuclear Energy Research | Method for fabricating a compound semiconductor epitaxial wafer |
US20060103299A1 (en) * | 2004-11-15 | 2006-05-18 | The Hong Kong University Of Science And Technology | Polycrystalline silicon as an electrode for a light emitting diode & method of making the same |
KR100741968B1 (en) | 2004-11-23 | 2007-07-23 | 삼성에스디아이 주식회사 | Organic light emitting display device and fabricating method of the same |
JP4189386B2 (en) * | 2005-01-27 | 2008-12-03 | ローム株式会社 | Method for growing nitride semiconductor crystal layer and method for producing nitride semiconductor light emitting device |
EP1856721A2 (en) * | 2005-03-11 | 2007-11-21 | The Arizona Board of Regents, A Body Corporate Acting on Behalf of Arizona State University | NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES |
KR100780169B1 (en) * | 2005-07-26 | 2007-11-27 | 페-쳉 종 | semiconductor barrier grain boundary insulating structure and its forming method |
JP5243256B2 (en) * | 2005-11-01 | 2013-07-24 | マサチューセッツ インスティテュート オブ テクノロジー | Monolithically integrated semiconductor materials and devices |
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US7639912B2 (en) * | 2007-01-31 | 2009-12-29 | Hewlett-Packard Development Company, L.P. | Apparatus and method for subterranean distribution of optical signals |
US7892964B2 (en) * | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
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CN102779838A (en) * | 2011-05-13 | 2012-11-14 | 中国科学院微电子研究所 | Silicon base tensile strain substrate structure and preparation method of silicon base tensile strain substrate structure |
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WO2020069312A1 (en) * | 2018-09-28 | 2020-04-02 | The Penn State Research Foundation | Method of growing crystalline layers on amorphous substrates using two-dimensional and atomic layer seeds |
KR102276296B1 (en) * | 2018-12-10 | 2021-07-13 | 한양대학교 산학협력단 | Method for preparing single crystal layer, structure having the single crystal layer, and semiconductor device having the structure |
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WO2003094218A2 (en) | 2003-11-13 |
US20030207589A1 (en) | 2003-11-06 |
CN100359648C (en) | 2008-01-02 |
US6916717B2 (en) | 2005-07-12 |
AU2003231131A1 (en) | 2003-11-17 |
CN1650407A (en) | 2005-08-03 |
KR20040108771A (en) | 2004-12-24 |
JP2005524977A (en) | 2005-08-18 |
AU2003231131A8 (en) | 2003-11-17 |
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