WO2003100878A3 - A low-forward-voltage molecular rectifier - Google Patents

A low-forward-voltage molecular rectifier Download PDF

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Publication number
WO2003100878A3
WO2003100878A3 PCT/US2003/015512 US0315512W WO03100878A3 WO 2003100878 A3 WO2003100878 A3 WO 2003100878A3 US 0315512 W US0315512 W US 0315512W WO 03100878 A3 WO03100878 A3 WO 03100878A3
Authority
WO
WIPO (PCT)
Prior art keywords
low
molecular species
moiety
attachment
electrode
Prior art date
Application number
PCT/US2003/015512
Other languages
French (fr)
Other versions
WO2003100878A2 (en
Inventor
Pavel Kornilovich
Shun-Chi Chang
Alexandre M Bratkovski
R Stanley Williams
Original Assignee
Hewlett Packard Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co filed Critical Hewlett Packard Development Co
Priority to JP2004508424A priority Critical patent/JP2005527121A/en
Priority to AU2003233543A priority patent/AU2003233543A1/en
Priority to EP03728979A priority patent/EP1506583A2/en
Publication of WO2003100878A2 publication Critical patent/WO2003100878A2/en
Publication of WO2003100878A3 publication Critical patent/WO2003100878A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A single molecular species having a low-forward-voltage rectifying property is provided. The molecular species is represented by the formula (a), where A is a 'conducting' moiety (with a relatively narrow HOMO-LUMO gap), IL and IR are each an 'insulating' moiety (with a relatively wide HOMO-LUMO gap), CL is a connecting group for an attachment to a first electrode, and CR is a connecting group for attachment to a second electrode. Also, a low-forward-voltage rectifying molecular rectifier is provided, comprising the molecular species attached between the two electrodes. The present teachings provide a set of design rues to build single-molecule rectifying diodes that opearte at low forward and large revers voltages. Such single-molecule rectifying diodes are useful in a variety of nano-scale applications.
PCT/US2003/015512 2002-05-20 2003-05-16 A low-forward-voltage molecular rectifier WO2003100878A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004508424A JP2005527121A (en) 2002-05-20 2003-05-16 Low forward voltage molecular rectifier
AU2003233543A AU2003233543A1 (en) 2002-05-20 2003-05-16 A low-forward-voltage molecular rectifier
EP03728979A EP1506583A2 (en) 2002-05-20 2003-05-16 A low-forward-voltage molecular rectifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/151,856 2002-05-20
US10/151,856 US6670631B2 (en) 2002-05-20 2002-05-20 Low-forward-voltage molecular rectifier

Publications (2)

Publication Number Publication Date
WO2003100878A2 WO2003100878A2 (en) 2003-12-04
WO2003100878A3 true WO2003100878A3 (en) 2004-04-01

Family

ID=29419525

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/015512 WO2003100878A2 (en) 2002-05-20 2003-05-16 A low-forward-voltage molecular rectifier

Country Status (7)

Country Link
US (2) US6670631B2 (en)
EP (1) EP1506583A2 (en)
JP (1) JP2005527121A (en)
KR (1) KR20050028914A (en)
AU (1) AU2003233543A1 (en)
TW (1) TW200307378A (en)
WO (1) WO2003100878A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7343059B2 (en) * 2003-10-11 2008-03-11 Hewlett-Packard Development Company, L.P. Photonic interconnect system
KR100560431B1 (en) * 2003-12-23 2006-03-13 한국전자통신연구원 Molecular switching devices
US7034332B2 (en) * 2004-01-27 2006-04-25 Hewlett-Packard Development Company, L.P. Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
EP1703572A1 (en) * 2005-01-25 2006-09-20 SONY DEUTSCHLAND GmbH Molecular rectifiers
US7833904B2 (en) * 2005-06-16 2010-11-16 The Trustees Of Columbia University In The City Of New York Methods for fabricating nanoscale electrodes and uses thereof
CN100451003C (en) * 2005-11-17 2009-01-14 复旦大学 Molecular rectifying material containing mercapto and preparation process thereof
CA2673675A1 (en) * 2006-12-27 2008-07-10 David Bruce Geohegan Transparent conductive nano-composites
US7973357B2 (en) * 2007-12-20 2011-07-05 Samsung Electronics Co., Ltd. Non-volatile memory devices
CN116761439B (en) * 2023-08-23 2023-11-14 江苏集创原子团簇科技研究院有限公司 Atomic-level cluster memory device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993025003A1 (en) * 1992-06-01 1993-12-09 Yale University Sub-nanoscale electronic systems, devices and processes
DE10013013A1 (en) * 1999-03-29 2000-10-26 Hewlett Packard Co Chemical synthesized components, intersects pair of crossing conductors which form crossing which has function for measurement in nanometer range

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953874A (en) * 1974-03-12 1976-04-27 International Business Machines Corporation Organic electronic rectifying devices
US5057878A (en) * 1989-12-29 1991-10-15 Gte Laboratories Incorporated M-I-M' device and fabrication method
US5475341A (en) * 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
US6320200B1 (en) * 1992-06-01 2001-11-20 Yale University Sub-nanoscale electronic devices and processes
US6348700B1 (en) * 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
US6339227B1 (en) * 1999-02-01 2002-01-15 The Mitre Corporation Monomolecular electronic device
US6858162B2 (en) * 2002-04-01 2005-02-22 Hewlett-Packard Development Company, L.P. Single molecule realization of the switch and doide combination

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993025003A1 (en) * 1992-06-01 1993-12-09 Yale University Sub-nanoscale electronic systems, devices and processes
DE10013013A1 (en) * 1999-03-29 2000-10-26 Hewlett Packard Co Chemical synthesized components, intersects pair of crossing conductors which form crossing which has function for measurement in nanometer range

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ELLENBOGEN J C ET AL: "ARCHITECTURES FOR MOLECULAR ELECTRONIC COMPUTERS: 1. LOGIC STRUCTURES AND AN ADDER DESIGNED FROM MOLECULAR ELECTRONIC DIODES", PROCEEDINGS OF THE IEEE, IEEE. NEW YORK, US, vol. 88, no. 3, March 2000 (2000-03-01), pages 383 - 426, XP000966283, ISSN: 0018-9219 *
GITTINS D I ET AL: "REDOX-CONNECTED MULTILAYERS OF DISCRETE GOLD PARTICLES: A NOVEL ELECTROACTIVE NANOMATERIAL", ADVANCED MATERIALS, VCH VERLAGSGESELLSCHAFT, WEINHEIM, DE, vol. 11, no. 9, 5 July 1999 (1999-07-05), pages 737 - 740, XP000851833, ISSN: 0935-9648 *
KORNILOVITCH P E ET AL: "Current rectification by molecules with asymmetric tunneling barriers", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS), 15 OCT. 2002, APS THROUGH AIP, USA, vol. 66, no. 16, pages 165436 - 1-11, XP002267620, ISSN: 0163-1829 *
METZGER R M: "DEMONSTRATION OF UNIMOLECULAR ELECTRICAL RECTIFICATION IN HEXADECYLQUINOLINIUM TRICYANOQUINODIMETHANIDE", ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, WILEY AND SONS LTD, CHICHESTER, GB, vol. 8, no. 5, 1 September 1998 (1998-09-01), pages 229 - 245, XP000786703, ISSN: 1057-9257 *

Also Published As

Publication number Publication date
AU2003233543A1 (en) 2003-12-12
US20040195565A1 (en) 2004-10-07
KR20050028914A (en) 2005-03-23
EP1506583A2 (en) 2005-02-16
US6670631B2 (en) 2003-12-30
TW200307378A (en) 2003-12-01
US20030213951A1 (en) 2003-11-20
US7009201B2 (en) 2006-03-07
WO2003100878A2 (en) 2003-12-04
AU2003233543A8 (en) 2003-12-12
JP2005527121A (en) 2005-09-08

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