WO2004010578A2 - Level shifting and level-shifting amplifier circuits - Google Patents

Level shifting and level-shifting amplifier circuits Download PDF

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Publication number
WO2004010578A2
WO2004010578A2 PCT/US2003/022675 US0322675W WO2004010578A2 WO 2004010578 A2 WO2004010578 A2 WO 2004010578A2 US 0322675 W US0322675 W US 0322675W WO 2004010578 A2 WO2004010578 A2 WO 2004010578A2
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Prior art keywords
level shifting
level
shifted
signal
output signal
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PCT/US2003/022675
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French (fr)
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WO2004010578A3 (en
Inventor
Liusheng Liu
Guoxing Li
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O2Micro, Inc.
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Priority to AU2003259181A priority Critical patent/AU2003259181A1/en
Publication of WO2004010578A2 publication Critical patent/WO2004010578A2/en
Publication of WO2004010578A3 publication Critical patent/WO2004010578A3/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H03K19/018528—Interface arrangements of complementary type, e.g. CMOS with at least one differential stage

Definitions

  • the present invention relates to level shifting and/or amplifying level shifting circuitry.
  • Particular utility for the present invention includes a detector circuit that can be used as a wakeup circuit to generate a wakeup signal that may be used in power management systems; although the present invention is broadly applicable to a level shifting and/or level shifting and amplifying circuit topologies that may be implemented in a broad range of applications.
  • Description of Related Art Figure 1 depicts a generalized block diagram for a bipolar signal detector 10 known in the art.
  • the detector includes a first comparator 12 that compares a sensing signal N sen with a positive threshold voltage V H , and a second comparator 14 that compares the sensing signal V sen with a negative threshold signal N L .
  • the sensing signal V Sen can be derived from an associated system (not shown), for example, a sense resistor.
  • Gate 16 generates an output signal Vd-t based on the outputs of one or both of the comparators. As shown by the polarity of the comparators, if V sen is less than V L or greater than V H , then V d - t is HIGH (or LOW) indicating that V sen is greater than (absolute value) the threshold voltages.
  • the present invention provides a level shifting circuit topology.
  • One exemplary topology includes a first and second level shifting circuits wherein said second level shifting circuit generating a level shifted output signal from a variable input signal, the said first level shifting circuit generating a fixed level shifted output threshold signal from a fixed input reference signal.
  • the level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other.
  • Another exemplary level shifting circuit is provided that includes a first, second and third level shifting.
  • the second level shifting circuit generates a level shifted output signal from a variable input signal.
  • the first and third level shifting circuits generate fixed, level shifted output threshold signals from a fixed input reference signal.
  • the level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other.
  • the present invention provides an amplifying level shifting circuit topology.
  • One exemplary topology includes a first and second amplifying level shifting circuits.
  • the second amplifying level shifting circuit generates an amplified and level shifted output signal from a variable input signal.
  • the first amplifying level shifting circuit generates a fixed, amplified and level shifted output threshold signal from a fixed input reference signal.
  • the amplified level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other.
  • Another exemplary amplifying level shifting circuit topology includes comprising a first, second and third amplifying level shifting circuits.
  • the second amplifying level shifting circuit generates an amplified and level shifted output signal from a variable input signal.
  • the first and third amplifying level shifting circuits generate fixed, amplified and level shifted output threshold signals from a fixed input reference signal.
  • the amplified level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other.
  • the present invention provides a detection circuit that includes a first and second level shifting circuits and a comparator.
  • the second level shifting circuit generates a level shifted output signal from a variable input signal
  • the first level shifting circuit generates a fixed level shifted output threshold signal from a fixed input reference signal.
  • the comparator receives the level shifted output signal and the fixed level shifted output signal and generates a signal indicative of the difference between the level shifted output signal and the fixed level shifted output signal.
  • the present invention provides a detection circuit that includes a first and second amplifying level shifting circuits and a comparator.
  • the second amplifying level shifting circuit generates an amplified and level shifted output signal from a variable input signal, and the first amplifying level shifting circuit generating a fixed, amplified and level shifted output threshold signal from a fixed input reference signal.
  • the comparator receives the amplified level shifted output signal and the fixed, amplified level shifted output signal and generating a signal indicative of the difference between the amplified level shifted output signal and the fixed, amplified level shifted output signal.
  • Figure 1 depicts a generalized block diagram for a conventional bipolar signal detector
  • Figure 2A depicts one exemplary circuit diagram of a level shifting circuit topology according to the present invention
  • Figure 2B depicts an exemplary individual level shifting circuit as used in the topology of Figure 2A
  • Figure 2C depicts a graph of the DC transfer curves of the topology of Figure 2 A
  • Figure 3 depicts another exemplary circuit diagram of a level shifting circuit topology according to the present invention
  • Figure 4 A depicts an exemplary circuit diagram of a level-shifting and amplifying circuit topology according to the present invention
  • Figure 4B depicts an exemplary individual level-shifting and amplifier circuit as used in the topology of Figure 4A
  • Figure 4C depicts the DC transfer curves for the circuit
  • Fig. 2A depicts one exemplary circuit diagram of a level shifting circuit topology according to the present invention. The following description of this topology is directed to a level shifting the input signals when V sen is close to power supply VSS.
  • the present invention provides two or more level shifting circuits, and in the exemplary embodiment three level shifting circuits Bi, B 2 and B 3 are provided, as described below.
  • Fig. 2B which is a separate schematic for level shifter Bi ⁇ B in Fig. 2A.
  • the input signal Vj n goes into the gate of source follower M R and output from its source, then go through the resistor Ri, form the final output signal V 0 .
  • the level shifter does have a shifting aspect represented by l (R; + l/g m Fi)-
  • Rj and g m pj one can select a desired shifting value.
  • Shifting refers to amplitude shifting.
  • V sen is a signal that is close to a supply voltage VSS, it may be desirable to shift the input signals (V ref and V sen , more fully described below) toward VDD.
  • the three level shifters Bi, B 2 and B 3 have approximately the same dimension load transistor Mpi, Mp 2 and M P3 .
  • the level shifters have approximately the same dimension source follower M FI , M F2 and M F3 .
  • the term approximately is to be construed broadly, and may depend on the particular tolerance required or the particular operating environment.
  • Level shifter B 2 will shift the signal to be detected V sen to V 0 ', which may be optimized to around the middle of the power supply, e.g., (VDD-VSS)/2.
  • Level shifter Bi generates a lower threshold V L ', and the input to Bi is a reference signal V ref -
  • Level shifter B 3 generates an upper threshold VH from the reference signal V ref .
  • level shifters Bi and B 3 generate a fixed, level shifted output from a fixed input, where the output is level shifted according to equation (2).
  • the exemplary topology of Figure 2A assumes that V sen is close to or equal to the power supply VSS.
  • “Close to” is to be construed broadly and may depend on, for example, the tolerances required for a given application. For example, “close to” may be defined as within 10% of a power supply voltage. Accordingly, V re f is selected to be close to or equal to VSS.
  • V sen when the signal to be detected V sen is between V L and V H then the shifted signal V 0 ' will be between NL'and V H ', otherwise V 0 ' will be greater than V H ' or less than V L '.
  • Vdet When the topology of Figure 2A is used as a detection circuit (as described with reference to Figure 1) using comparators 12 and 14 and XOR gate 16, then when V sen is between V L and VH, Vdet will keep the same state, either high or low. But when V sen ⁇ V L or V sen > VH, then V 0 ' ⁇ V L ' or V 0 ' > V H ' and V det will change state, either from high to low or from low to high.
  • Fig. 3 is another exemplary level shifting topology of the present invention, and may be used, for example, when V sen is very close to power supply VDD.
  • this exemplary embodiment follows the same principles as described above with reference to Figures 2A, 2B and 2C.
  • the changes are the source followers M FI ⁇ M F3 change from PMOS to NMOS , and the active load change from PMQS Mpi ⁇ Mp 3 to NMOS M NI ⁇ M N3 .
  • the operation of Figure 3 is similar to Figure 2A except that the outputs of the level shifting circuits are shifted away from VDD and towards VSS.
  • the circuits of Figures 2 A and 3 are equally applicable for bipolar signal level shifting, i.e., where V sen resides at +/- 0 Volts. In such a case, it may be desirable to down shift (Figure 3) or up shift (Figure 2 A) the outputs so that the output reference signals V H ' and V L ' are both positive or both negative.
  • Fig. 2A and Fig. 3 may be adapted to shift the signal to be detected, V sen , to be around the middle of the power supply. If the topologies of Figure 2 A and/or Figure 3 are adapted to include comparators 12 and 14, by shifting to around the middle of the power supply region allows the comparators to work in their linear region. But if the signal to be detected, V sen is small, e.g. the threshold
  • V sen is small, e.g. the threshold
  • Fig. 4A is an exemplary amplified level shifting circuit topology. Like previous exemplary embodiments, the circuit of Figure 4A assumes V sen is close to or equal to VSS. In this exemplary embodiment, three pre-amplifier stages A] , A 2 and A 3 are used to both amplify and level shift input signals, as will be detailed below.
  • Fig. 4B is the schematic for pre-amplifier Ai ⁇ A 3 in Fig. 4A. Each pre-amplifier consists of two branches.
  • Mp B i, M N BJ and R b form the right branch.
  • V 0 ⁇ gmNBi [RbgdsPBi ( gmNBi + gmbNBi + gdsNBi) - (gdsNBi + gdsPBi)] ⁇ V g ⁇ ⁇ gmNBi / [RbgmNBigdsPBi- (gdsNBi + gdsPBi)] ⁇ V g (8) ⁇ ⁇ V g (9) From (8), we see that the right branch has a gain ⁇ .
  • the pre-amplifier will work in the linear region having a gain ⁇ .
  • a small difference in input signal V g which is the shifted signal of V; n , will generate a larger difference in output V 0 .
  • the three pre-amplifiers Ai , A 2j and A 3 have approximately the same dimension for all the relative transistors and approximatly the same value for R b , but, in order to shift the input signals a different value is selected for each of Ri, R 2 and R 3 .
  • each preamplifier circuit shifts the input signal and thus generates a different transfer curve, as shown in Fig. 4C.
  • Pre-amplifier A 2 shifts and amplifies the signal to be detected V sen to a desired output level V canvas" . As before, this output value may be selected to be around the middle of the power supply.
  • Pre-amplifier Ai generates an upper threshold V H " from a fixed reference signal V re f.
  • Pre-amplifier A 3 is used to generate the lower threshold V L ' ' from the reference signal V re f. In the example of Fig.
  • V re f is selected to be close to or equal to VSS.
  • the original threshold I V H -Vref I Ib (R 3 - R 2 ) (10a)
  • Ib (R2 - Rl) (10b)
  • the original threshold will be amplified to
  • ⁇ I b (R 3 - R 2 ) (11a)
  • V H " - Vo" I ⁇ I b (R 2 - R (lib)
  • the gain can be adjusted such that the output signals are well larger than the comparator offset.
  • ⁇ may be selected to be equal to about 100, then the amplified threshold will be lOOmV, which is typically much larger than the offset of a typical comparator.
  • the bias circuit in Fig. 4A will generate the bias current.
  • the threshold is determined by transistor area ratio and resistor ratio and resistor differences, which can be precisely controlled in IC Process.
  • alternative bias circuits may be used to generate the bias current I b .
  • Fig. 5 is another exemplary amplified level shifting topology of the present invention, and may be used, for example, when V sen is very close to power supply VDD.
  • Figure 5 follows the same principles as described above with reference to Figures 4A, 4B and 4C.
  • the operation of Figure 5 is similar to Figure 4A except that the input signals are shifted away from VDD and towards VSS.
  • the circuits of Figures 4A and 5 are equally applicable for bipolar signal level shifting, i.e., where V sen resides at +/- 0 Volts. In such a case, it may be desirable to shift down ( Figure 5) or shift up (Figure 4A) the outputs so that the output reference signals V H " and V L ' ' are both positive or both negative.
  • the topologies of Figure 4A and 5 may be used as a detection circuit for "small signal” detection.
  • Small signal may mean, for example, that the signal to be detected is within the tolerance range of given components.
  • the amplifying function of this circuit topology may be chosen to make the output threshold to be larger than the offset voltage of a comparator (12 or 14).
  • circuit topologies disclosed herein are only exemplary, and other level shifting topologies may be used instead.
  • exemplary level shifting and amplifying circuit topologies described herein may be replaced with other level shifting and amplifying circuit topologies as are known in the art, without departing from the present invention. All such modifications are deemed within the scope of the present invention, only as limited by the appended claims.

Abstract

Level shifting and amplified level shifting circuit topologies are provided that include two or more level shifting or amplified level shifting circuits. The level shifting circuits receive a variable and fixed input and generate a variable and fixed output that are level shifted with respect to the input signals. The amplified level shifting circuits receive a variable and fixed input and generate a variable and fixed output that are level shifted and amplified with respect to the input signals. These circuits may be utilized to form a detection circuit that detects a difference in the output signals.

Description

Level Shifting and Level-Shifting Amplifier Circuits 1. Field of the Invention The present invention relates to level shifting and/or amplifying level shifting circuitry. Particular utility for the present invention includes a detector circuit that can be used as a wakeup circuit to generate a wakeup signal that may be used in power management systems; although the present invention is broadly applicable to a level shifting and/or level shifting and amplifying circuit topologies that may be implemented in a broad range of applications. 2. Description of Related Art Figure 1 depicts a generalized block diagram for a bipolar signal detector 10 known in the art. The detector includes a first comparator 12 that compares a sensing signal Nsen with a positive threshold voltage VH, and a second comparator 14 that compares the sensing signal Vsen with a negative threshold signal NL. The sensing signal VSen can be derived from an associated system (not shown), for example, a sense resistor. Gate 16 generates an output signal Vd-t based on the outputs of one or both of the comparators. As shown by the polarity of the comparators, if Vsen is less than VL or greater than VH, then Vd-t is HIGH (or LOW) indicating that Vsen is greater than (absolute value) the threshold voltages. One disadvantage of this topology is that a negative power supply is required for the comparators and for the negative threshold voltage V . Also, if the sensing signal is small compared to the comparator offset , the comparator offset may generate erroneous outputs. In other words, if the difference between VH and V is within the offset of the comparator, the circuit 10 becomes incapable of detecting a small sensed signal within this range. SUMMARY OF THE INVENTION In one aspect, the present invention provides a level shifting circuit topology. One exemplary topology includes a first and second level shifting circuits wherein said second level shifting circuit generating a level shifted output signal from a variable input signal, the said first level shifting circuit generating a fixed level shifted output threshold signal from a fixed input reference signal. The level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other. Another exemplary level shifting circuit is provided that includes a first, second and third level shifting. The second level shifting circuit generates a level shifted output signal from a variable input signal. The first and third level shifting circuits generate fixed, level shifted output threshold signals from a fixed input reference signal. The level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other. In another aspect, the present invention provides an amplifying level shifting circuit topology. One exemplary topology includes a first and second amplifying level shifting circuits. The second amplifying level shifting circuit generates an amplified and level shifted output signal from a variable input signal. The first amplifying level shifting circuit generates a fixed, amplified and level shifted output threshold signal from a fixed input reference signal. The amplified level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other. Another exemplary amplifying level shifting circuit topology is provided that includes comprising a first, second and third amplifying level shifting circuits. The second amplifying level shifting circuit generates an amplified and level shifted output signal from a variable input signal. The first and third amplifying level shifting circuits generate fixed, amplified and level shifted output threshold signals from a fixed input reference signal. The amplified level shifting circuits are biased with respect to each other so that each has an output signal that is shifted with respect to the other. In a specific, exemplary circuit implementation, the present invention provides a detection circuit that includes a first and second level shifting circuits and a comparator. The second level shifting circuit generates a level shifted output signal from a variable input signal, and the first level shifting circuit generates a fixed level shifted output threshold signal from a fixed input reference signal. The comparator receives the level shifted output signal and the fixed level shifted output signal and generates a signal indicative of the difference between the level shifted output signal and the fixed level shifted output signal. In another specific, exemplary circuit implementation, the present invention provides a detection circuit that includes a first and second amplifying level shifting circuits and a comparator. The second amplifying level shifting circuit generates an amplified and level shifted output signal from a variable input signal, and the first amplifying level shifting circuit generating a fixed, amplified and level shifted output threshold signal from a fixed input reference signal. The comparator receives the amplified level shifted output signal and the fixed, amplified level shifted output signal and generating a signal indicative of the difference between the amplified level shifted output signal and the fixed, amplified level shifted output signal. It will be appreciated by those skilled in the art that although the following Detailed Description will proceed with reference being made to preferred embodiments and methods of use, the present invention is not intended to be limited to these preferred embodiments and methods of use. Rather, the present invention is of broad scope and is intended to be limited as only set forth in the accompanying claims. Other features and advantages of the present invention will become apparent as the following Detailed Description proceeds, and upon reference to the Drawings, wherein like numerals depict like parts, and wherein: Brief Description of the Drawings Figure 1 depicts a generalized block diagram for a conventional bipolar signal detector; Figure 2A depicts one exemplary circuit diagram of a level shifting circuit topology according to the present invention; Figure 2B depicts an exemplary individual level shifting circuit as used in the topology of Figure 2A; Figure 2C depicts a graph of the DC transfer curves of the topology of Figure 2 A; Figure 3 depicts another exemplary circuit diagram of a level shifting circuit topology according to the present invention; Figure 4 A depicts an exemplary circuit diagram of a level-shifting and amplifying circuit topology according to the present invention; Figure 4B depicts an exemplary individual level-shifting and amplifier circuit as used in the topology of Figure 4A; Figure 4C depicts the DC transfer curves for the circuit of the topology of Figure 4A; and Figure 5 depicts another exemplary circuit diagram of a level-shifting and amplifying circuit topology according to the present invention. Detailed Description of Exemplary Embodiments Level Shifting Circuit Topologies Fig. 2A depicts one exemplary circuit diagram of a level shifting circuit topology according to the present invention. The following description of this topology is directed to a level shifting the input signals when Vsen is close to power supply VSS. As opposed to the the topology of Fig. 1 , the present invention provides two or more level shifting circuits, and in the exemplary embodiment three level shifting circuits Bi, B2 and B3 are provided, as described below. Referring briefly to Fig. 2B, which is a separate schematic for level shifter Bi ~ B in Fig. 2A. Each level shifter consists of an active load transistor MR (i = 1, 2, 3), a resistor R; (i = 1, 2, 3) and a source follower Mpj (i = 1, 2, 3). The input signal Vjn goes into the gate of source follower MR and output from its source, then go through the resistor Ri, form the final output signal V0. Using small signal model analysis, we get: Vo = [gmFi (gdsFi + gmFi+ gmbFi )]Vfa + lb {[(Ri + l/(gdsFi + gmFi+ gmbFi)] // 1 gdsPi } (1) Normally, gmFi » gmbFi » gdsFi, (Ri +1 (gdsFi + gmFi + gmbFi)) « 1 / gdsPi So, equation (1) can be simplified as: V0 « Vin + IbRi + Ib (l/ gmFi) (i=l,2,3) (2) From equation (2), the level shifter has a gain approximately equal to one, i.e., the level shifter has little or no amplification function. But the level shifter does have a shifting aspect represented by l (R; + l/gmFi)- Thus, as will be apparent to one skilled in the art, by selecting values of Rj and gmpj one can select a desired shifting value. Shifting, in this case, refers to amplitude shifting. In the circuit of Figure 2 A, and assuming that Vsen is a signal that is close to a supply voltage VSS, it may be desirable to shift the input signals (Vref and Vsen, more fully described below) toward VDD. Although not a requirement of the present invention, shifting the amplitude of the input signals in this manner may be useful so that external circuitry (e.g., the comparators 12 and 14) operates in the linear region of operation for those devices. In the exemplary embodiment of Fig. 2A, to simplify the analysis and construction, the three level shifters Bi, B2 and B3 have approximately the same dimension load transistor Mpi, Mp2 and MP3. Also, the level shifters have approximately the same dimension source follower MFI, MF2 and MF3. Of course, the term approximately is to be construed broadly, and may depend on the particular tolerance required or the particular operating environment. Additionally, it is not a requirement of the present invention to have approximately the same load dimension for the transistors, but rather, is described herein as only one exemplary construction. Shifting the input signals is therefore a function of the resistors Ri , R2 , and R3 as shown in equation (2). In this exemplary embodiment, the resistor R2 associated with the sensed input signal Vsen may be chosen to be shifted so that it resides between two threshold signals, i.e., Ri < R2 < R3. So according to equation (2), each level shifter has a different shifting value. As shown in Fig. 2C, because the gain is roughly equal one, the DC transfer curves are three parallel 45 degree straight line for each level shifter \, B2 and B3. The DC transfer curves represent the input/output of each of the three level shifting circuits. Level shifter B2 will shift the signal to be detected Vsen to V0', which may be optimized to around the middle of the power supply, e.g., (VDD-VSS)/2. Level shifter Bi generates a lower threshold VL', and the input to Bi is a reference signal Vref- Level shifter B3 generates an upper threshold VH from the reference signal Vref. Thus, level shifters Bi and B3 generate a fixed, level shifted output from a fixed input, where the output is level shifted according to equation (2). As mentioned above, the exemplary topology of Figure 2A assumes that Vsen is close to or equal to the power supply VSS. "Close to" is to be construed broadly and may depend on, for example, the tolerances required for a given application. For example, "close to" may be defined as within 10% of a power supply voltage. Accordingly, Vref is selected to be close to or equal to VSS. For equation (2), the threshold I VH'- Vo'| = Ib (R3 - R2) (3a) | Vo'- VL' | = Ib (R2 - R,) (3b) Because the gain of the level shifter is roughly one, the original threshold I VH - Vref I = I VH' - Vo'| = Ib (R3 - R2) (4a) I Vref - VL| = I VO'-VL'| = lb (R2 - Ri) (4b) As we can see from Fig. 2C, when the signal to be detected Vsen is between VL and VH then the shifted signal V0' will be between NL'and VH', otherwise V0' will be greater than VH' or less than VL'. When the topology of Figure 2A is used as a detection circuit (as described with reference to Figure 1) using comparators 12 and 14 and XOR gate 16, then when Vsen is between VL and VH, Vdet will keep the same state, either high or low. But when Vsen < VL or Vsen > VH, then V0' < VL' or V0' > VH' and Vdet will change state, either from high to low or from low to high. In Fig. 2A, the bias circuit generates the bias current Ib. lb = Vt In (A)/Ro (5) Where A is the area ratio of transistor Qi, and Q2. Substrate (5) into (4), I VH - Vref I = Vt In (A) (R3 - R2)/ Ro (6a) I Vref - VL I = Vt In (A) (R2 - Ri)/ Ro (6b) From (6a) and (6b), the threshold is determined by transistor area ratio and resistor ratio and resistor differences, which can be accurately controlled in IC process. Of course, for those skilled in the art, the bias circuit is not necessarily the same as in Fig. 2A. Other kinds of circuits can be used to generate the bias current Ib. Also, depending on the desired application, it may not be necessary to have both the lower threshold VL and upper threshold VH. Instead, it may be desirable that only one threshold, either VL or VH is needed, in this case, one level shifter and one comparator, either level shifter Bi and comparator 12 or level shifter B3 and comparator 14 can be omitted. Fig. 3 is another exemplary level shifting topology of the present invention, and may be used, for example, when Vsen is very close to power supply VDD. For those skilled in the art, this exemplary embodiment follows the same principles as described above with reference to Figures 2A, 2B and 2C. The changes are the source followers MFI~ MF3 change from PMOS to NMOS , and the active load change from PMQS Mpi ~ Mp3 to NMOS MNI ~ MN3. The operation of Figure 3 is similar to Figure 2A except that the outputs of the level shifting circuits are shifted away from VDD and towards VSS. Of course, the circuits of Figures 2 A and 3 are equally applicable for bipolar signal level shifting, i.e., where Vsen resides at +/- 0 Volts. In such a case, it may be desirable to down shift (Figure 3) or up shift (Figure 2 A) the outputs so that the output reference signals VH' and VL' are both positive or both negative. These and other modifications may all be obtained using the topology of Figures 2 A and/or 3. As previously stated, the exemplary embodiments of Fig. 2A and Fig. 3 may be adapted to shift the signal to be detected, Vsen, to be around the middle of the power supply. If the topologies of Figure 2 A and/or Figure 3 are adapted to include comparators 12 and 14, by shifting to around the middle of the power supply region allows the comparators to work in their linear region. But if the signal to be detected, Vsen is small, e.g. the threshold | VH - Vsen | or I Vsen - V I is comparable to the offset of comparator 12 and/or 14, then it may be desirable to amplify the level shifted signals. Amplified level shifting circuits are described below. Amplified Level Shifting Circuit Topologies Fig. 4A is an exemplary amplified level shifting circuit topology. Like previous exemplary embodiments, the circuit of Figure 4A assumes Vsen is close to or equal to VSS. In this exemplary embodiment, three pre-amplifier stages A], A2 and A 3 are used to both amplify and level shift input signals, as will be detailed below. Fig. 4B is the schematic for pre-amplifier Ai ~ A3 in Fig. 4A. Each pre-amplifier consists of two branches. MPAi, MNAi, and Rj (1 = 1, 2, 3) form the left branch, MpBi, MNBJ and Rb form the right branch. The left branch shifts the input signal Vm, which is close to VSS, to an appropriate level Vg, Vg = Vin + Ib Ri + VgsNAi (7)
Where (IbRj + VgSNAi) is the shifted factor. In this exemplary embodiment, the right branch is a common source amplifier. Through small signal AC analysis, we get: V0 = {gmNBi [RbgdsPBi ( gmNBi + gmbNBi + gdsNBi) - (gdsNBi + gdsPBi)] } Vg ~ {gmNBi / [RbgmNBigdsPBi- (gdsNBi + gdsPBi)]} Vg (8) ^ β Vg (9) From (8), we see that the right branch has a gain β. Thus, one skilled in the art will recognize that by selecting an appropriate resistor Rb value, the pre-amplifier will work in the linear region having a gain β. Thus, a small difference in input signal Vg, which is the shifted signal of V;n, will generate a larger difference in output V0. Referring again to Fig. 4 A, the three pre-amplifiers Ai, A2j and A3 have approximately the same dimension for all the relative transistors and approximatly the same value for Rb, but, in order to shift the input signals a different value is selected for each of Ri, R2 and R3. To shift the signal to be detected Vsen to a point between two threshold signals, then the values are selected as Ri < R2 <R3. According to equation (7) and (8), each preamplifier circuit shifts the input signal and thus generates a different transfer curve, as shown in Fig. 4C. Pre-amplifier A2 shifts and amplifies the signal to be detected Vsen to a desired output level V„" . As before, this output value may be selected to be around the middle of the power supply. Pre-amplifier Ai generates an upper threshold VH" from a fixed reference signal Vref. Pre-amplifier A3 is used to generate the lower threshold VL' ' from the reference signal Vref. In the example of Fig. 4A, Vref is selected to be close to or equal to VSS. According to equation (7), the original threshold I VH -Vref I = Ib (R3 - R2) (10a) | Vref - VL | = Ib (R2 - Rl) (10b) But after the pre-amplifier, the original threshold will be amplified to | Vo" - VL" | = β Ib (R3 - R2) (11a) | VH" - Vo" I = β Ib (R2 - R (lib) As we can see from Fig. 4C, when the signal to be detected Vsen is between VL and VH then the shifted and amplified signal V0" will be between V "and VH", otherwise V0' ' will be greater than VH" or less than VL" . When the topology of Figure 4 A is used as a detection circuit (as described with reference to Figure 1) using comparators 12 and 14 and XOR gate 16, then when Vsen is between VL and VH, V et will keep the same state, either high or low. But when Vsen < VL or Vsen > VH, then V0" < VL" or V0" > VH" and Vdet will change state, either from high to low or from low to high. So, even if the original threshold is only about 1 mV, which is comparable to the comparator offset, the gain can be adjusted such that the output signals are well larger than the comparator offset. For example, β may be selected to be equal to about 100, then the amplified threshold will be lOOmV, which is typically much larger than the offset of a typical comparator. Again, the bias circuit in Fig. 4A will generate the bias current. lb = Vt ln (A) /Ro Then, the original threshold in (10a) and (10b) will be I VH -Vref I = Vt In (A) (R3 - R2)/ R (12a) I Vref - VL I = Vt In (A) (R2 - R,)/ R0 (12b)
The threshold is determined by transistor area ratio and resistor ratio and resistor differences, which can be precisely controlled in IC Process. Of course, those skilled in the art will recognize that alternative bias circuits may be used to generate the bias current Ib. Also, depending on the desired application, it may not be necessary to have both the lower and upper threshold VL and VH- In this case, one pre-amplifier and/or one comparator, either Ai and comparator 12 or A3 and comparator 14 can be omitted. Fig. 5 is another exemplary amplified level shifting topology of the present invention, and may be used, for example, when Vsen is very close to power supply VDD. For those skilled in the art, this exemplary embodiment follows the same principles as described above with reference to Figures 4A, 4B and 4C. The operation of Figure 5 is similar to Figure 4A except that the input signals are shifted away from VDD and towards VSS. Of course, the circuits of Figures 4A and 5 are equally applicable for bipolar signal level shifting, i.e., where Vsen resides at +/- 0 Volts. In such a case, it may be desirable to shift down (Figure 5) or shift up (Figure 4A) the outputs so that the output reference signals VH" and VL' ' are both positive or both negative. These and other modifications may all be obtained using the topology of Figures 4 A and/or 5. Note that if the input signal is a small signal , the topologies of Figure 4A and 5 may be used as a detection circuit for "small signal" detection. Small signal may mean, for example, that the signal to be detected is within the tolerance range of given components. Note further that the amplifying function of this circuit topology may be chosen to make the output threshold to be larger than the offset voltage of a comparator (12 or 14). Those skilled in the art will recognize numerous modifications to the exemplary topologies of the present invention. For example, those skilled in the art will recognize that many different level shifting circuits exist which may be modified to be biased with respect to one another so that the outputs are shifted in a manner according to the present invention. Indeed, the specific circuit topologies disclosed herein are only exemplary, and other level shifting topologies may be used instead. Likewise, the exemplary level shifting and amplifying circuit topologies described herein may be replaced with other level shifting and amplifying circuit topologies as are known in the art, without departing from the present invention. All such modifications are deemed within the scope of the present invention, only as limited by the appended claims.

Claims

CLAIMS 1. A level shifting circuit topology, comprising a first and second level shifting circuits wherein said second level shifting circuit generating a level shifted output signal from a variable input signal, and said first level shifting circuit generating a fixed level shifted output threshold signal from a fixed input reference signal; said level shifting circuits being biased with respect to each other so that each has an output signal that is shifted with respect to the other.
2. A level shifting circuit topology as claimed in claim 1, further comprising a third level shifting generating a second fixed level shifted output threshold signal from said fixed input reference signal; wherein said first, second and third level shifting circuits being biased with respect to each other so that each has an output signal that is shifted with respect to the other.
3. A level shifting circuit as claimed in claim 2, wherein said second level shifting circuit being biased so that its output signal is shifted between the output signals of said first and third level shifting circuits.
4. A level shifting circuit topology as claimed in claim 2, wherein said first, second and third level shifting circuits each comprise: a load transistor coupled to a first voltage source; a source follower transistor coupled to a second voltage source, and a bias resistor coupled between said load transistor and said source follower.
5. A level shifting circuit topology as claimed in claim 4, further comprising a bias circuit generating a bias voltage for biasing said load transistor, said fixed input signal or said variable input signal controlling the conduction state of said source follower transistor.
6. A level shifting circuit topology as claimed in claim 4, wherein a first bias resistor associated with said first level shifting circuit having a value less than a second bias resistor associated with said second level shifting circuit, which has a value less than a third bias resistor associated with said third level shifting circuit.
7. A level shifting circuit topology as claimed in claim 1, wherein said output signals are shifted down with respect to a supply voltage.
8. A level shifting circuit topology as claimed in claim 1, wherein said output signals are shifted up with respect to a supply voltage.
9. A level shifting circuit topology as claimed in claim 1 , wherein said output signals are shifted to be approximately in the middle of two supply voltages.
10. An amplified level shifting circuit topology, comprising a first and second amplifying level shifting circuits wherein said second amplifying level shifting circuit generating an amplified and level shifted output signal from a variable input signal, and said first amplifying level shifting circuit generating a fixed, amplified and level shifted output threshold signal from a fixed input reference signal; said amplified level shifting circuits being biased with respect to each other so that each output signal is shifted with respect to the other.
11. An amplified level shifting circuit topology as claimed in claim 10, further comprising a third amplifying level shifting generating a second fixed, amplified level shifted output threshold signal from said fixed input reference signal; wherein said first, second and third amplifying level shifting circuits being biased with respect to each other so that each output signal is shifted with respect to the other.
12. An amplified level shifting circuit as claimed in claim 11 , wherein said second amplifying level shifting circuit being biased so that its output signal is shifted between the shifted output signals of said first and third amplifying level shifting circuits.
13. An amplifying level shifting circuit topology as claimed in claim 11 , wherein said first, second and third level shifting circuits each comprise: a first branch circuit for level shifting said input signal, said first branch further comprising a load resistor for determining the shift of said input signal, and; a second branch for amplifying said input signal.
14. An amplifying level shifting circuit topology as claimed in claim 13, further comprising a bias circuit generating a bias voltage for biasing said first and second branch.
15. An amplifying level shifting circuit topology as claimed in claim 13 , wherein a first load resistor associated with said first amplifying level shifting circuit having a value less than a second load resistor associated with a second amplifying level shifting circuit, which has a value less than a third load resistor associated with a third amplifying level shifting circuit.
16. A level shifting circuit topology as claimed in claim 10, wherein said output signals are shifted down with respect to a supply voltage.
17. A level shifting circuit topology as claimed in claim 10, wherein said output signals are shifted up with respect to a supply voltage.
18. A level shifting circuit topology as claimed in claim 10, wherein said output signals are shifted to be approximately in the middle of two supply voltages.
19. A level shifting circuit topology, comprising a first, second and third level shifting circuits wherein said second level shifting circuit generating a level shifted output signal from a variable input signal, and said first and third level shifting circuits generating fixed, level shifted output threshold signals from a fixed input reference signal; said level shifting circuits being biased with respect to each other so that each output signal is shifted with respect to the other.
20. A level shifting circuit as claimed in claim 19, wherein said second level shifting circuit being biased so that its output signal is shifted between the shifted output signals of said first and third level shifting circuits.
21. An amplified level shifting circuit topology, comprising a first, second and third amplifying level shifting circuits wherein said second amplifying level shifting circuit generates an amplified and level shifted output signal from a variable input signal, and said first and third amplifying level shifting circuit generate fixed, amplified and level shifted output threshold signals from a fixed input reference signal; said amplified level shifting circuits being biased with respect to each other so that each output signal is shifted with respect to the other.
22. An amplified level shifting circuit as claimed in claim 21 , wherein said second amplifying level shifting circuit being biased so that its output signal is shifted between the shifted output signals of said first and third amplifying level shifting circuits.
23. A detection circuit, comprising: a first and second level shifting circuits wherein said second level shifting circuit generating a level shifted output signal from a variable input signal, and said first level shifting circuit generating a fixed level shifted output threshold signal from a fixed input reference signal; and a comparator receiving said level shifted output signal and said fixed level shifted output signal and generating a signal indicative of the difference between said level shifted output signal and said fixed level shifted output signal.
24. A detection circuit as claimed in claim 23, further comprising: a third level shifting circuit generating a second fixed level shifted output signal; and a second comparator receiving said level shifted output signal and said second fixed level shifted output signal and generating a second signal indicative of the difference between said level shifted output signal and said second fixed level shifted output signal.
25. A detection circuit as claimed in claim 24, further comprising a logic gate receiving said first and second signals and generating a detection signal having a state defined by said first or second signal.
26. A detection circuit as claimed in claim 25, wherein said logic gate comprising an XOR gate.
27. A detection circuit as claimed in claim 23, wherein said level shifting circuits being biased with respect to each other so that each has an output signal that is shifted with respect to the other.
28. A detection circuit as claimed in claim 24, wherein said level shifting circuits being biased with respect to each other so that each has an output signal that is shifted with respect to the other.
29. A detection circuit as claimed in claim 28, wherein said second level shifting circuit being biased so that its output signal is shifted between the shifted output signals of said first and third level shifting circuits.
30. A detection circuit, comprising: a first and second amplifying level shifting circuits wherein said second amplifying level shifting circuit generating an amplified and level shifted output signal from a variable input signal, and said first amplifying level shifting circuit generating a fixed, amplified and level shifted output threshold signal from a fixed input reference signal, and; a comparator receiving said amplified level shifted output signal and said fixed, amplified level shifted output signal and generating a signal indicative of the difference between said level shifted output signal and said fixed level shifted output signal.
31. A detection circuit as claimed in claim 30, further comprising: a third amplifying level shifting circuit generating a second fixed, amplified level shifted output signal; and a second comparator receiving said amplified level shifted output signal and said second fixed, amplified level shifted output signal and generating a second signal indicative of the difference between said amplified level shifted output signal and said second fixed, amplified level shifted output signal.
32. A detection circuit as claimed in claim 31 , further comprising a logic gate receiving said first and second signals and generating a detection signal having a state defined by said first or second signal.
33. A detection circuit as claimed in claim 32, wherein said logic gate comprises an XOR gate.
34. A detection circuit as claimed in claim 30, wherein said amplifying level shifting circuits being biased with respect to each other so that each has an output signal that is shifted with respect to the other.
35. A detection circuit as claimed in claim 31 , wherein said amplifying level shifting circuits being biased with respect to each other so that each has an output signal that is shifted with respect to the other.
36. A detection circuit as claimed in claim 35, wherein said second amplifying level shifting circuit being biased so that its output signal is shifted between the shifted output signals of said first and third amplifying level shifting circuits.
PCT/US2003/022675 2002-07-19 2003-07-21 Level shifting and level-shifting amplifier circuits WO2004010578A2 (en)

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