WO2004025709A3 - Method for fabricating an ohmic contact in a semiconductor device - Google Patents
Method for fabricating an ohmic contact in a semiconductor device Download PDFInfo
- Publication number
- WO2004025709A3 WO2004025709A3 PCT/US2003/024591 US0324591W WO2004025709A3 WO 2004025709 A3 WO2004025709 A3 WO 2004025709A3 US 0324591 W US0324591 W US 0324591W WO 2004025709 A3 WO2004025709 A3 WO 2004025709A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- channel
- encapsulation layer
- semiconductor layers
- metal contacts
- fabricating
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- 238000005538 encapsulation Methods 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 238000000137 annealing Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66924—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
- H01L21/242—Alloying of doping materials with AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003290514A AU2003290514A1 (en) | 2002-08-05 | 2003-08-05 | Method for fabricating an ohmic contact in a semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40141402P | 2002-08-05 | 2002-08-05 | |
US60/401,414 | 2002-08-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004025709A2 WO2004025709A2 (en) | 2004-03-25 |
WO2004025709A3 true WO2004025709A3 (en) | 2004-07-29 |
Family
ID=31993925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/024591 WO2004025709A2 (en) | 2002-08-05 | 2003-08-05 | Method for fabricating an ohmic contact in a semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (3) | US6884704B2 (en) |
AU (1) | AU2003290514A1 (en) |
WO (1) | WO2004025709A2 (en) |
Families Citing this family (43)
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US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
US6982204B2 (en) * | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
US6884704B2 (en) * | 2002-08-05 | 2005-04-26 | Hrl Laboratories, Llc | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
US6897137B2 (en) * | 2002-08-05 | 2005-05-24 | Hrl Laboratories, Llc | Process for fabricating ultra-low contact resistances in GaN-based devices |
US7098490B2 (en) * | 2003-06-02 | 2006-08-29 | Hrl Laboratories, Llc | GaN DHFET |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7901994B2 (en) * | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7084441B2 (en) * | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US20060017064A1 (en) * | 2004-07-26 | 2006-01-26 | Saxler Adam W | Nitride-based transistors having laterally grown active region and methods of fabricating same |
US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US7355215B2 (en) * | 2004-12-06 | 2008-04-08 | Cree, Inc. | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies |
US7161194B2 (en) * | 2004-12-06 | 2007-01-09 | Cree, Inc. | High power density and/or linearity transistors |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
GB2424312B (en) * | 2005-03-14 | 2010-03-03 | Denso Corp | Method of forming an ohmic contact in wide band semiconductor |
US7465967B2 (en) | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
JP4536568B2 (en) * | 2005-03-31 | 2010-09-01 | 住友電工デバイス・イノベーション株式会社 | Method for manufacturing FET |
US20060226442A1 (en) * | 2005-04-07 | 2006-10-12 | An-Ping Zhang | GaN-based high electron mobility transistor and method for making the same |
US8575651B2 (en) | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
US7626217B2 (en) * | 2005-04-11 | 2009-12-01 | Cree, Inc. | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
US7544963B2 (en) * | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
US7615774B2 (en) * | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US9331192B2 (en) * | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
US7592211B2 (en) * | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US7709269B2 (en) * | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
JP5105160B2 (en) * | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | Transistor |
US8728884B1 (en) | 2009-07-28 | 2014-05-20 | Hrl Laboratories, Llc | Enhancement mode normally-off gallium nitride heterostructure field effect transistor |
US9378965B2 (en) * | 2009-12-10 | 2016-06-28 | Infineon Technologies Americas Corp. | Highly conductive source/drain contacts in III-nitride transistors |
US20130105817A1 (en) | 2011-10-26 | 2013-05-02 | Triquint Semiconductor, Inc. | High electron mobility transistor structure and method |
US9887155B2 (en) * | 2012-09-28 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple metal layer semiconductor device and low temperature stacking method of fabricating the same |
KR101923959B1 (en) * | 2012-12-11 | 2018-12-03 | 한국전자통신연구원 | Transistor and Method of Fabricating the Same |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
KR20210074871A (en) | 2019-12-12 | 2021-06-22 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
Citations (6)
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US5760418A (en) * | 1994-05-16 | 1998-06-02 | Electronics And Telecommunications Research Institute | GaAs power semiconductor device operating at a low voltage and method for fabricating the same |
EP0899782A2 (en) * | 1997-08-28 | 1999-03-03 | Nec Corporation | Method of manufacturing a field effect transistor |
WO2001013436A1 (en) * | 1999-08-16 | 2001-02-22 | Cornell Research Foundation, Inc. | Passivation of gan based fets |
WO2001057929A1 (en) * | 2000-02-04 | 2001-08-09 | Cree Lighting Company | Group iii nitride based fets and hemts with reduced trapping and method for producing the same |
US20010013604A1 (en) * | 2000-01-31 | 2001-08-16 | Sony Corporation | Compound semiconductor device and process for fabricating the same |
US6391696B1 (en) * | 1997-09-29 | 2002-05-21 | Nec Corporation | Field effect transistor and method of manufacturing thereof |
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JPH0547798A (en) | 1991-01-31 | 1993-02-26 | Texas Instr Inc <Ti> | Gaas fet with resistive a1gaas |
JPH07254732A (en) | 1994-03-15 | 1995-10-03 | Toshiba Corp | Semiconductor light emitting device |
JPH1056168A (en) * | 1996-08-08 | 1998-02-24 | Mitsubishi Electric Corp | Field-effect transistor |
US5766695A (en) | 1996-11-27 | 1998-06-16 | Hughes Electronics Corporation | Method for reducing surface layer defects in semiconductor materials having a volatile species |
KR100571071B1 (en) | 1996-12-04 | 2006-06-21 | 소니 가부시끼 가이샤 | Field effect transistor and method for manufacturing the same |
US5856217A (en) | 1997-04-10 | 1999-01-05 | Hughes Electronics Corporation | Modulation-doped field-effect transistors and fabrication processes |
JP3141935B2 (en) | 1998-02-02 | 2001-03-07 | 日本電気株式会社 | Heterojunction field effect transistor |
US6316793B1 (en) | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
JP4022708B2 (en) | 2000-06-29 | 2007-12-19 | 日本電気株式会社 | Semiconductor device |
WO2003050849A2 (en) | 2001-12-06 | 2003-06-19 | Hrl Laboratories, Llc | High power-low noise microwave gan heterojunction field effet transistor |
US20040021152A1 (en) * | 2002-08-05 | 2004-02-05 | Chanh Nguyen | Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate |
US6884704B2 (en) | 2002-08-05 | 2005-04-26 | Hrl Laboratories, Llc | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
US6897137B2 (en) | 2002-08-05 | 2005-05-24 | Hrl Laboratories, Llc | Process for fabricating ultra-low contact resistances in GaN-based devices |
-
2003
- 2003-08-04 US US10/634,348 patent/US6884704B2/en not_active Expired - Lifetime
- 2003-08-05 WO PCT/US2003/024591 patent/WO2004025709A2/en not_active Application Discontinuation
- 2003-08-05 AU AU2003290514A patent/AU2003290514A1/en not_active Abandoned
-
2004
- 2004-10-13 US US10/964,875 patent/US7566916B2/en active Active
-
2009
- 2009-06-17 US US12/486,686 patent/US8030688B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5760418A (en) * | 1994-05-16 | 1998-06-02 | Electronics And Telecommunications Research Institute | GaAs power semiconductor device operating at a low voltage and method for fabricating the same |
EP0899782A2 (en) * | 1997-08-28 | 1999-03-03 | Nec Corporation | Method of manufacturing a field effect transistor |
US6391696B1 (en) * | 1997-09-29 | 2002-05-21 | Nec Corporation | Field effect transistor and method of manufacturing thereof |
WO2001013436A1 (en) * | 1999-08-16 | 2001-02-22 | Cornell Research Foundation, Inc. | Passivation of gan based fets |
US20010013604A1 (en) * | 2000-01-31 | 2001-08-16 | Sony Corporation | Compound semiconductor device and process for fabricating the same |
WO2001057929A1 (en) * | 2000-02-04 | 2001-08-09 | Cree Lighting Company | Group iii nitride based fets and hemts with reduced trapping and method for producing the same |
Also Published As
Publication number | Publication date |
---|---|
US6884704B2 (en) | 2005-04-26 |
US20040029330A1 (en) | 2004-02-12 |
US8030688B2 (en) | 2011-10-04 |
AU2003290514A1 (en) | 2004-04-30 |
US20090250725A1 (en) | 2009-10-08 |
US7566916B2 (en) | 2009-07-28 |
AU2003290514A8 (en) | 2004-04-30 |
US20050048747A1 (en) | 2005-03-03 |
WO2004025709A2 (en) | 2004-03-25 |
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