WO2004027684B1 - Photolithography mask repair - Google Patents

Photolithography mask repair

Info

Publication number
WO2004027684B1
WO2004027684B1 PCT/US2003/029521 US0329521W WO2004027684B1 WO 2004027684 B1 WO2004027684 B1 WO 2004027684B1 US 0329521 W US0329521 W US 0329521W WO 2004027684 B1 WO2004027684 B1 WO 2004027684B1
Authority
WO
WIPO (PCT)
Prior art keywords
area
defect
aerial image
atoms
mask
Prior art date
Application number
PCT/US2003/029521
Other languages
French (fr)
Other versions
WO2004027684A3 (en
WO2004027684A2 (en
Inventor
Diane K Stewart
Jr J David Casey
John Beaty
Christian R Musil
Steven Berger
Original Assignee
Fei Co
Diane K Stewart
Jr J David Casey
John Beaty
Christian R Musil
Steven Berger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co, Diane K Stewart, Jr J David Casey, John Beaty, Christian R Musil, Steven Berger filed Critical Fei Co
Priority to AU2003299002A priority Critical patent/AU2003299002A1/en
Priority to JP2004538248A priority patent/JP2005539273A/en
Priority to EP03756838A priority patent/EP1540665A4/en
Publication of WO2004027684A2 publication Critical patent/WO2004027684A2/en
Publication of WO2004027684A3 publication Critical patent/WO2004027684A3/en
Publication of WO2004027684B1 publication Critical patent/WO2004027684B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
    • G21G5/00—Alleged conversion of chemical elements by chemical reaction

Abstract

Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

Claims

AMENDED CLAIMS
[received by the International Bureau on 26 NOV 2004 (26.11.04); original claims 1 and 5 have been replaced by amended claims 1 and 5.
I . A method for repairing a defect in a photolithography mask including a transparent substrate and a pattern of absorber material, the defect being an absence of absorber material on an area that should be covered by an absorber material, the method comprising: scanning a beam of metallic ions over the defect area to implant metallic atoms into the defect area, the metal atoms reducing the transparency of the defect area without depositing an opaque material to cover the defect area. 2- The method of claim 1 further comprising scanning a beam of metallic ions over a non-defective area of the transparent substrate near the defect to implant metallic atoms in the non-defective area, the implantation of the metallic atoms in the non-defective area causing the aerial image of the repaired mask, to more closely resemble the aerial image of a non-defective mask. 3. The method of claim 1 further comprising thinning an area of the substrate to alter the phase of transmitted light. 4. A method for repairing a defect in a photolithography mask including a transparent substrate and a pattern of material, a first area around the defect characterized by a design aerial image, the defect being an absence of material on a second area that should be covered by a material or the presence of material on the second area that should not be covered by the material, the method comprising: scanning a beam of ions over a third area Lo implant atoms into the third area, the atoms altering the third area and causing an actual repaired aerial image of the first area to approximate the design aerial image more closely than did an actual unrepaired aerial image. 5. The method of claim 4 in which the defect comprises a clear defect in a binary mask and in which scanning a beam of ions over a third area to implant atoms into the third area includes
PCT/US2003/029521 2002-09-18 2003-09-18 Photolithography mask repair WO2004027684A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003299002A AU2003299002A1 (en) 2002-09-18 2003-09-18 Photolithography mask repair
JP2004538248A JP2005539273A (en) 2002-09-18 2003-09-18 Photolithographic mask modification
EP03756838A EP1540665A4 (en) 2002-09-18 2003-09-18 Photolithography mask repair

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41169902P 2002-09-18 2002-09-18
US60/411,699 2002-09-18

Publications (3)

Publication Number Publication Date
WO2004027684A2 WO2004027684A2 (en) 2004-04-01
WO2004027684A3 WO2004027684A3 (en) 2004-11-04
WO2004027684B1 true WO2004027684B1 (en) 2005-01-06

Family

ID=32030714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/029521 WO2004027684A2 (en) 2002-09-18 2003-09-18 Photolithography mask repair

Country Status (7)

Country Link
US (2) US7504182B2 (en)
EP (1) EP1540665A4 (en)
JP (1) JP2005539273A (en)
KR (1) KR101077980B1 (en)
CN (1) CN100521062C (en)
AU (1) AU2003299002A1 (en)
WO (1) WO2004027684A2 (en)

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US7504182B2 (en) 2009-03-17
AU2003299002A1 (en) 2004-04-08
US20090111036A1 (en) 2009-04-30
CN100521062C (en) 2009-07-29
EP1540665A2 (en) 2005-06-15
WO2004027684A3 (en) 2004-11-04
AU2003299002A8 (en) 2004-04-08
US20040151991A1 (en) 2004-08-05
WO2004027684A2 (en) 2004-04-01
JP2005539273A (en) 2005-12-22
US7662524B2 (en) 2010-02-16
KR20050054948A (en) 2005-06-10
EP1540665A4 (en) 2008-02-13
CN1695222A (en) 2005-11-09
KR101077980B1 (en) 2011-10-28

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