WO2004030015A2 - Method and apparatus for an improved baffle plate in a plasma processing system - Google Patents
Method and apparatus for an improved baffle plate in a plasma processing system Download PDFInfo
- Publication number
- WO2004030015A2 WO2004030015A2 PCT/IB2003/005249 IB0305249W WO2004030015A2 WO 2004030015 A2 WO2004030015 A2 WO 2004030015A2 IB 0305249 W IB0305249 W IB 0305249W WO 2004030015 A2 WO2004030015 A2 WO 2004030015A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- baffle plate
- recited
- exposed surfaces
- passageway
- protective barrier
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 70
- 230000004888 barrier function Effects 0.000 claims description 39
- 230000001681 protective effect Effects 0.000 claims description 39
- 230000013011 mating Effects 0.000 claims description 26
- 238000002048 anodisation reaction Methods 0.000 claims description 19
- 238000003754 machining Methods 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 10
- 238000007743 anodising Methods 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000005242 forging Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- -1 Sc2F3 Inorganic materials 0.000 claims description 3
- 229910009527 YF3 Inorganic materials 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 3
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- 230000003628 erosive effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 34
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- 239000010410 layer Substances 0.000 description 12
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- 230000008021 deposition Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
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- 244000137852 Petrea volubilis Species 0.000 description 3
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- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Definitions
- the present invention relates to an improved component for a plasma processing system and, more particularly, to a baffle plate employed in a plasma processing system surrounding a substrate holder.
- IC integrated circuits
- plasma is formed within the plasma reactor under vacuum conditions by heating electrons to energies sufficient to sustain ionizing collisions with a supplied process gas.
- the heated electrons can have energy sufficient to sustain dissociative collisions and, therefore, a specific set of gases under predetermined conditions (e.g., chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged species and chemically reactive species suitable to the particular process being performed within the chamber (e.g., etching processes where materials are removed from the substrate or deposition processes where materials are added to the substrate).
- components of the plasma processing system are coated with a protective barrier.
- a protective barrier For example, components fabricated from aluminum can be anodized to produce a surface layer of aluminum oxide, which is more resistant to the plasma.
- a consumable or replaceable component such as one fabricated from silicon, quartz, alumina, carbon, or silicon carbide, can be inserted within the processing chamber to protect the surfaces of more valuable components that would impose greater costs during frequent replacement.
- the present invention provides an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously addresses the above-identified shortcomings.
- the upper surface can further comprise a first mating surface proximate the outer radial edge.
- the lower surface can further comprise a second mating surface proximate the outer radial edge.
- the baffle plate can further comprise at least one passageway coupled to the upper surface and to the lower surface, and configured to permit the flow of gas therethrough, wherein the at least one passageway can comprise an inner passageway surface.
- the exposed surface of the baffle plate comprises the upper surface of the baffle plate excluding the first mating surface; the lower surface of the baffle plate excluding the second mating surface; the inner edge surface; and the inner passageway surface contiguous with the upper surface and the lower surface.
- the present invention further provides a method of producing the baffle plate in the plasma processing system comprising the steps: fabricating the baffle plate; anodizing the baffle plate to form a surface anodization layer on the baffle plate; machining exposed surfaces on the baffle plate to remove the surface anodization layer; and forming a protective barrier on the exposed surfaces.
- the present invention provides another method of producing the baffle plate in the plasma processing system comprising the steps: fabricating the baffle plate; masking exposed surfaces on the baffle plate to prevent formation of a surface anodization layer; anodizing the baffle plate to form the surface anodization layer on the baffle plate; unmasking the exposed surfaces; and forming a protective barrier on the exposed surfaces.
- the present invention provides another method of producing the baffle plate in the plasma processing system comprising the steps: fabricating the baffle plate; and forming a protective barrier on a plurality of exposed surfaces.
- the present invention may also include a process of combining machining and masking to prepare the exposed surfaces to receive the protective barrier, and then forming the protective barrier on the exposed surfaces. For example, two of the exposed surfaces can be masked prior to anodizing, and two of the surfaces can be machined after anodizing to create four exposed surfaces on which the protective barrier can be formed.
- Any of the above methods may also optionally include machining anodized
- FIG. 1 shows a simplified block diagram of a plasma processing system comprising a baffle plate according to an embodiment of the present invention
- FIG. 2 shows a plan view of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 3 shows a cross sectional view of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 4 shows an expanded cross sectional view of one passageway formed within a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 5 shows an expanded cross sectional view of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 6 presents an expanded view of an outer radial edge of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 7 presents a method of producing a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 8 presents a method of producing a baffle plate for a plasma processing system according to another embodiment of the present invention
- FIG. 9 presents a method of producing a baffle plate for a plasma processing system according to another embodiment of the present invention.
- a plasma processing system 1 is depicted in FIG. 1 comprising a plasma processing chamber 10, an upper assembly 20, an electrode plate 24, a substrate holder 30 for supporting a substrate 35, and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced pressure atmosphere 11 in plasma processing chamber 10.
- Plasma processing chamber 10 can facilitate the formation of a processing plasma in process space 12 adjacent substrate 35.
- the plasma processing system 1 can be configured to process 200 mm substrates, 300 mm substrates, or larger.
- upper assembly 20 can comprise at least one of a cover, a gas injection assembly, and an upper electrode impedance match network.
- the electrode plate 24 can be coupled to an RF source, and facilitate an upper electrode for the plasma processing system 1.
- the upper assembly 20 comprises a cover and an electrode plate 24, wherein the electrode plate 24 is maintained at an electrical potential equivalent to that of the plasma processing chamber 10.
- the plasma processing chamber 10, the upper assembly 20, and the electrode plate 24 can be electrically connected to ground potential, and facilitate an upper electrode for the plasma processing system 1.
- Plasma processing chamber 10 can, for example, further comprise a deposition shield 14 for protecting the plasma processing chamber 10 from the processing plasma in the process space 12, and an optical viewport 16.
- Optical viewport 16 can comprise an optical window 17 coupled to the backside of an optical window deposition shield 18, and an optical window flange 19 can be configured to couple optical window 17 to the optical window deposition shield 18. Sealing members, such as O-rings, can be provided between the optical window flange 19 and the optical window 17, between the optical window 17 and the optical window deposition shield 18, and between the optical window deposition shield 18 and the plasma processing chamber 10. Optical viewport 16 can, for example, permit monitoring of optical emission from the processing plasma in process space 12.
- Substrate holder 30 can, for example, further comprise a vertical translational device 50 surrounded by a bellows 52 coupled to the substrate holder 30 and the plasma processing chamber 10, and configured to seal the vertical translational device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 10.
- a bellows shield 54 can, for example, be coupled to the substrate holder 30 and configured to protect the bellows 52 from the processing plasma.
- Substrate holder 10 can, for example, further be coupled to at least one of a focus ring 60, and a shield ring 62.
- a baffle plate 64 can extend about a periphery of the substrate holder 30.
- Substrate 35 can be, for example, transferred into and out of plasma processing chamber 10 through a slot valve (not shown) and chamber feed-through (not shown) via robotic substrate transfer system where it is received by substrate lift pins (not shown) housed within substrate holder 30 and mechanically translated by devices housed therein. Once substrate 35 is received from substrate transfer system, it is lowered to an upper surface of substrate holder 30. [0031] Substrate 35 can be, for example, affixed to the substrate holder 30 via an electrostatic clamping system.
- substrate holder 30 can, for example, further include a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
- gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30.
- a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
- gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30.
- Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures.
- heating elements such as resistive heating elements, or thermo-electric heaters/coolers can be included.
- substrate holder 30 can comprise an electrode through which RF power is coupled to the processing plasma in process space 12.
- substrate holder 30 can be electrically biased at a RF voltage via the transmission of RF power from a RF generator (not shown) through an impedance match network (not shown) to substrate holder 30.
- the RF bias can serve to heat electrons to form and maintain plasma.
- the system can operate as a reactive ion etch (RIE) reactor, wherein the chamber and upper gas injection electrode serve as ground surfaces.
- RIE reactive ion etch
- a typical frequency for the RF bias can range from 1 MHz to 100 MHz and is preferably 13.56 MHz.
- RF systems for plasma processing are well known to those skilled in the art.
- the processing plasma formed in process space 12 can be formed using a parallel-plate, capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, any combination thereof, and with and without magnet systems.
- the processing plasma in process space 12 can be formed using electron cyclotron resonance (ECR).
- ECR electron cyclotron resonance
- the processing plasma in process space 12 is formed from the launching of a Helicon wave.
- the processing plasma in process space 12 is formed from a propagating surface wave.
- baffle plate 64 can form a canted ring comprising an upper surface 182, a lower surface 184, an inner radial edge 186, and an outer radial edge 188.
- the baffle plate 64 can further comprise at least one passageway 190 coupled to the upper surface 182 and to the lower surface 184, and configured to permit the flow of gas therethrough.
- FIG. 4 provides an expanded view of one of the passageways 190, wherein the expanded view provides a cross-sectional view of the passageway 190.
- Each passageway 190 comprises an inner passageway surface 192 contiguous with the upper surface 182 and the lower surface 184 of the baffle plate 64.
- inner passageway surface 192 can comprise at least one flat and/or curved surfaces.
- at least one passageway 190 can comprise a minimum length, dictated by the distance between the upper surface 182 and the lower surface 184 proximate each passageway 190, having a dimensional range from 1 to 50 mm. Desirably, the minimum length comprises a dimensional range from 1 to 10 mm, and preferably the minimum length is at least 2 mm.
- FIG. 5 provides an exemplary cross-sectional view of baffle plate 64 depicting several passageways 190 in cross-section.
- the passageways 190 can comprise at least one orifice that is aligned in a radial direction. Alternately, the at least one orifice can be aligned in an azimuthal direction. In an alternate embodiment of the present invention, the at least one passageway 190 can be slanted and, therefore, aligned partially in a radial direction and an azimuthal direction. In an alternate embodiment, the at least one passageway 190 can comprise a combination of alignment methodologies thereof. Alternately, the at least passageway 190 can include at least one slot.
- inner radial edge 186 comprises an inner edge surface 212 contiguous with the upper surface 182 and the lower surface 184 of baffle plate 64.
- the inner edge surface 212 can comprise a curved and/or flat surface.
- baffle plate 64 can comprise surfaces 182 and 184, wherein at least one of the upper surface 182 and the lower surface 184 is inclined at an angle 195.
- the angle 195 of inclination for each surface can be the same as shown in FIG. 5.
- the angle 195 can range from 0 to 90 degrees. Desirably, the angle 195 ranges from 0 to 60 degrees; and preferably, the angle 195 ranges from 0 to 45 degrees.
- FIG. 6. illustrates an expanded cross sectional view of the outer radial edge 188 of baffle plate 64.
- baffle plate 64 can, for example, further comprise a plurality of fastening receptors 200, each fastening receptor 200 can be coupled to the upper surface 182 and the lower surface 184, and configured to receive fastening devices (not shown) (such as bolts) to couple baffle plate 64 to the plasma processing system 1.
- the fastening receptors 200 can comprise an entrant cavity 202, an exit through-hole 204, and an inner receptor surface 206.
- the number of fastening receptors 200 formed within baffle plate 64 can range from 0 to 100.
- the number of fastening receptors 200 can range from 5 to 20; and, preferably, the number of fastening receptors 200 equals 8.
- the outer radial edge 188 can further comprise an outer edge surface 214, a first mating surface 216, and a second mating surface 218.
- the outer edge surface 214 can be coupled to the upper surface 182 and the lower surface 184 of baffle plate 64.
- Upper surface 182 can comprise the first mating surface 216 that can be configured to mate with plasma processing system 1.
- Lower surface 184 can comprise the second mating surface 218 that can be configured to mate with plasma processing system 1.
- the outer radial edge 188 can comprise a thickness, dictated by the distance between the first mating surface 216 and the second mating surface 218 proximate the outer edge surface 214, having a dimensional range from 1 to 50 mm. Desirably, the thickness comprises a dimensional range from 1 to 10 mm, and preferably the thickness is at least 5 mm.
- the baffle plate 64 further comprises a protective barrier 150 formed on a plurality of exposed surfaces 220 of the baffle plate 64.
- the exposed surfaces 220 can comprise the upper surface 182 of baffle plate 64 excluding the first mating surface 216; the lower surface 184 of baffle plate 64 excluding the second mating surface 218; the inner edge surface 212; and the inner passageway surface 192 coupled to the upper surface 182 and the lower surface 184.
- the entrant cavity 202 surfaces and the through-hole surfaces are exposed surfaces.
- one or more of these surfaces can comprise a protective barrier.
- the exposed surfaces comprise all surfaces on the baffle plate 64.
- the protective barrier 150 can comprise a compound including an oxide of aluminum such as AI 2 O 3 . In another embodiment of the present invention, the protective barrier 150 can comprise a mixture of AI 2 O 3 and Y 2 O 3 . In another embodiment of the present invention, the protective barrier 150 can comprise at least one of a Ill-column element (column III of periodic table) and a Lanthanon element. In another embodiment of the present invention, the Ill-column element can comprise at least one of Yttrium, Scandium, and Lanthanum. In another embodiment of the present invention, the Lanthanon element can comprise at least one of Cerium, Dysprosium, and Europium.
- the compound forming protective barrier 150 can comprise at least one of Yttria (Y 2 O 3 ), Sc 2 O 3 , Sc 2 F 3 , YF 3 , La 2 O 3 , CeO 2 , Eu 2 O 3 , and DyO 3 .
- the protective barrier 150 formed on baffle plate 64 comprises a thermal sprayed coating having a minimum thickness, wherein the minimum thickness can be allowed to vary across the plurality of exposed surfaces 220.
- the specified thickness can be variable across the exposed surfaces 220.
- the minimum thickness can be constant over a first portion of the exposed surfaces 220 and variable over a second portion of the exposed surfaces 220.
- a variable thickness can occur on a curved surface, on a corner, or in a hole.
- the minimum thickness ranges from 0 micron to 550 micron. Desirably, the minimum thickness ranges from 50 micron to 250 micron; and, preferably, the minimum thickness ranges from 150 micron to 250 micron.
- baffle plate 64 can, for example, further comprise a plurality of mounting through-holes 201.
- Each mounting through-hole 201 can be coupled to the upper surface 182 and the lower surface 184, and configured to receive fastening devices (not shown) (such as bolts) to couple baffle plate 64 to at least one of the plasma processing chamber 10 and the deposition shield 14.
- the number of mounting through-holes 201 formed within baffle plate 64 can range from 0 to 100. Desirably, the number of mounting through- holes 201 ranges from 5 to 20; and, preferably, the number of mounting through- holes 201 is at least 10.
- FIG. 7 presents a method of producing the baffle plate 64 in the plasma processing system described in FIG. 1 according to an embodiment of the present invention.
- a flow diagram 300 begins in 310 with fabricating the baffle plate 64 (e.g., a baffle plate having the characteristics of the plate described with reference to FIGs. 2-6).
- Fabricating the baffle plate can comprise at least one of machining, casting, polishing, forging, and grinding.
- each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
- the techniques for machining a component using, for example, a mill or a lathe are well known to those skilled in the art of machining.
- the baffle plate can, for example, be fabricated from aluminum.
- the baffle plate is anodized to form a surface anodization layer.
- the surface anodization layer comprises aluminum oxide (AI 2 O 3 ). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
- the surface anodization layer is removed from the exposed surfaces 220 using standard machining techniques.
- other surfaces e.g., the first mating surface of the upper surface, and the second mating surface of the lower surface
- other surfaces may also be machined (e.g., to produce a flat or bare surface that provides at least one of a good mechanical or electrical contact at the machined surface).
- the protective barrier 150 is formed on the exposed surfaces 220.
- a protective barrier 150 comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier can further comprise polishing the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- FIG. 8 presents a method of producing the baffle plate in the plasma processing system described in FIG. 1 according to another embodiment of the present invention.
- a flow diagram 400 begins in 410 with fabricating the baffle plate 64 (e.g., a baffle plate having the characteristics of the plate described with reference to FIGs. 2-6).
- Fabricating the baffle plate can comprise at least one of machining, casting, polishing, forging, and grinding.
- each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
- the techniques for machining a component using, for example, a mill or a lathe are well known to those skilled in the art of machining.
- the baffle plate can, for example, be fabricated from aluminum.
- exposed surfaces 220 are masked to prevent the formation of a surface anodization layer thereon.
- Techniques for surface masking and unmasking are well known to those skilled in the art of surface coatings and surface anodization.
- other surfaces e.g., the first mating surface of the upper surface, and the second mating surface of the lower surface
- the baffle plate is anodized to form a surface anodization layer on the remaining unmasked surfaces.
- the surface anodization layer can comprise aluminum oxide (AI 2 O 3 ). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
- FIG. 9 presents a method of producing the baffle plate in the plasma processing system described in FIG. 1 according to another embodiment of the present invention.
- a flow diagram 500 begins in 510 with fabricating the baffle plate 64 (e.g., a baffle plate having the characteristics of the plate described with reference to FIGs. 2-6).
- Fabricating the baffle plate can comprise at least one of machining, casting, polishing, forging, and grinding.
- each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
- the techniques for machining a component using, for example, a mill or a lathe, are well known to those skilled in the art of machining.
- the baffle plate can, for example, be fabricated from aluminum.
- a protective barrier 150 is formed on exposed surfaces 220 of the baffle plate 64.
- a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier can further comprise polishing the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- the processes of forming a protective barrier 150 on the exposed surfaces 220, described with reference to FIGs. 7-9 can be modified to utilize a combination of machining and masking.
- at least one exposed surface is masked to prevent formation of the anodization layer thereon while other exposed surfaces are anodized.
- the exposed surfaces that are unmasked are then machined, and the exposed surfaces that were masked are unmasked.
- the protective barrier 150 can then be formed on all the exposed surfaces.
- additional surfaces that are not exposed surfaces may also be machined during the method (e.g., in order to provide a better mechanical or electrical contact than would be formed with the anodization layer thereon.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003276601A AU2003276601A1 (en) | 2002-09-30 | 2003-09-29 | Method and apparatus for an improved baffle plate in a plasma processing system |
CN038220792A CN1682339B (en) | 2002-09-30 | 2003-09-29 | Method and apparatus for an improved baffle plate in a plasma processing system |
JP2004539391A JP2006501610A (en) | 2002-09-30 | 2003-09-29 | Method and apparatus for improved baffle plates in a plasma processing system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/259,380 | 2002-09-30 | ||
US10/259,380 US7166166B2 (en) | 2002-09-30 | 2002-09-30 | Method and apparatus for an improved baffle plate in a plasma processing system |
Publications (2)
Publication Number | Publication Date |
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WO2004030015A2 true WO2004030015A2 (en) | 2004-04-08 |
WO2004030015A3 WO2004030015A3 (en) | 2004-06-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/IB2003/005249 WO2004030015A2 (en) | 2002-09-30 | 2003-09-29 | Method and apparatus for an improved baffle plate in a plasma processing system |
Country Status (6)
Country | Link |
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US (2) | US7166166B2 (en) |
JP (1) | JP2006501610A (en) |
KR (1) | KR100702296B1 (en) |
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KR20050054974A (en) | 2005-06-10 |
AU2003276601A1 (en) | 2004-04-19 |
US8118936B2 (en) | 2012-02-21 |
CN1682339A (en) | 2005-10-12 |
JP2006501610A (en) | 2006-01-12 |
WO2004030015A3 (en) | 2004-06-03 |
CN1682339B (en) | 2012-06-06 |
KR100702296B1 (en) | 2007-03-30 |
AU2003276601A8 (en) | 2004-04-19 |
US7166166B2 (en) | 2007-01-23 |
US20070107846A1 (en) | 2007-05-17 |
US20040063333A1 (en) | 2004-04-01 |
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