WO2004038321A3 - Method and apparatus for thickness decomposition of complicated layer structures - Google Patents

Method and apparatus for thickness decomposition of complicated layer structures Download PDF

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Publication number
WO2004038321A3
WO2004038321A3 PCT/IL2003/000888 IL0300888W WO2004038321A3 WO 2004038321 A3 WO2004038321 A3 WO 2004038321A3 IL 0300888 W IL0300888 W IL 0300888W WO 2004038321 A3 WO2004038321 A3 WO 2004038321A3
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WO
WIPO (PCT)
Prior art keywords
spectrum
maximum likelihood
learning stage
peak
peak frequencies
Prior art date
Application number
PCT/IL2003/000888
Other languages
French (fr)
Other versions
WO2004038321A2 (en
Inventor
Ofer Du-Nour
Vladimir Rubinstein
Original Assignee
Tevet Process Control Technolo
Ofer Du-Nour
Vladimir Rubinstein
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tevet Process Control Technolo, Ofer Du-Nour, Vladimir Rubinstein filed Critical Tevet Process Control Technolo
Priority to JP2004546350A priority Critical patent/JP2006504092A/en
Priority to EP03809413A priority patent/EP1556668A2/en
Priority to AU2003276649A priority patent/AU2003276649A1/en
Publication of WO2004038321A2 publication Critical patent/WO2004038321A2/en
Publication of WO2004038321A3 publication Critical patent/WO2004038321A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

Thickness measurement apparatus for measuring layer thicknesses on patterned areas of a semiconductor wafer, comprises: a spectrum analyzer for obtaining reflection data taken from a patterned area and obtaining therefrom a frequency spectrum, a peak detector for searching the spectrum to find peak frequencies within said spectrum, the search being restricted to regions corresponding to peak frequencies found in an earlier learning stage, a frequency filter (56), associated with the peak detector, for filtering the spectrum about said peak frequencies, and a maximum likelihood fitter (60) for using parameters obtained in the learning stage to carry out maximum likelihood fitting of said filtered spectrum to obtain the desired layer thicknesses. By carrying out maximum likelihood fitting (60) using parameters obtained beforehand in a high resolution non-real time learning stage, it is possible to provide high resolution results in real time.
PCT/IL2003/000888 2002-10-28 2003-10-28 Method and apparatus for thickness decomposition of complicated layer structures WO2004038321A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004546350A JP2006504092A (en) 2002-10-28 2003-10-28 Method and apparatus for thickness analysis of complex layer structures
EP03809413A EP1556668A2 (en) 2002-10-28 2003-10-28 Method and apparatus for thickness decomposition of complicated layer structures
AU2003276649A AU2003276649A1 (en) 2002-10-28 2003-10-28 Method and apparatus for thickness decomposition of complicated layer structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/281,207 2002-10-28
US10/281,207 US6885467B2 (en) 2002-10-28 2002-10-28 Method and apparatus for thickness decomposition of complicated layer structures

Publications (2)

Publication Number Publication Date
WO2004038321A2 WO2004038321A2 (en) 2004-05-06
WO2004038321A3 true WO2004038321A3 (en) 2005-05-06

Family

ID=32107120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2003/000888 WO2004038321A2 (en) 2002-10-28 2003-10-28 Method and apparatus for thickness decomposition of complicated layer structures

Country Status (7)

Country Link
US (1) US6885467B2 (en)
EP (1) EP1556668A2 (en)
JP (1) JP2006504092A (en)
KR (1) KR20050083844A (en)
CN (1) CN1329710C (en)
AU (1) AU2003276649A1 (en)
WO (1) WO2004038321A2 (en)

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US7202958B1 (en) 2004-06-01 2007-04-10 Nanometrics Incorporated Modeling a sample with an underlying complicated structure
US20060130767A1 (en) 2004-12-22 2006-06-22 Applied Materials, Inc. Purged vacuum chuck with proximity pins
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US7226339B2 (en) * 2005-08-22 2007-06-05 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US7409260B2 (en) * 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
US7406394B2 (en) * 2005-08-22 2008-07-29 Applied Materials, Inc. Spectra based endpointing for chemical mechanical polishing
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
US7444198B2 (en) * 2006-12-15 2008-10-28 Applied Materials, Inc. Determining physical property of substrate
DE102006062036B4 (en) * 2006-12-29 2017-10-05 Globalfoundries Inc. Evaluation of mechanical stresses in microstructure devices in the process line
KR101504508B1 (en) 2007-02-23 2015-03-20 어플라이드 머티어리얼스, 인코포레이티드 Using spectra to determine polishing endpoints
US7840375B2 (en) * 2007-04-02 2010-11-23 Applied Materials, Inc. Methods and apparatus for generating a library of spectra
US8536664B1 (en) 2007-04-16 2013-09-17 DigitalOptics Corporation MEMS MEMS device with integrated memory cells
JP4834847B2 (en) * 2007-10-05 2011-12-14 大塚電子株式会社 Multilayer film analysis apparatus and multilayer film analysis method
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
US8126694B2 (en) 2008-05-02 2012-02-28 Nanometrics Incorporated Modeling conductive patterns using an effective model
JP5473265B2 (en) 2008-07-09 2014-04-16 キヤノン株式会社 Multilayer structure measuring method and multilayer structure measuring apparatus
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
US8352061B2 (en) 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
WO2011056485A2 (en) 2009-11-03 2011-05-12 Applied Materials, Inc. Endpoint method using peak location of spectra contour plots versus time
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
FR2998047B1 (en) * 2012-11-12 2015-10-02 Soitec Silicon On Insulator METHOD FOR MEASURING THE THICKNESS VARIATIONS OF A LAYER OF A MULTILAYER SEMICONDUCTOR STRUCTURE
US10502694B2 (en) 2013-08-06 2019-12-10 Kla-Tencor Corporation Methods and apparatus for patterned wafer characterization
KR102214716B1 (en) 2014-08-28 2021-02-10 삼성전자주식회사 Apparatus for measuring thickness of thin film, measuring system comprising the same, and method for measuring thickness of thin film
KR20200072302A (en) 2018-12-12 2020-06-22 삼성전자주식회사 Thickness prediction network learning method, semiconductor device manufacturing method, and semiconductor material deposition equipment
KR20210128490A (en) 2019-03-15 2021-10-26 도쿄엘렉트론가부시키가이샤 Improved Resolution of Semiconductor Manufacturing Data Acquisition Instruments Using Machine Learning
DE102020100565A1 (en) 2020-01-13 2021-07-15 Aixtron Se Process for depositing layers
CN111965140B (en) * 2020-08-24 2022-03-01 四川长虹电器股份有限公司 Wavelength point recombination method based on characteristic peak
KR102512873B1 (en) * 2020-11-06 2023-03-23 한국생산기술연구원 Moire interferometer measurement system and moire interferometer measurement method using artificial intelligence
CN114396881A (en) * 2021-12-06 2022-04-26 武汉颐光科技有限公司 Method and device for fast Fourier transform fitting in spectral measurement and analysis

Citations (5)

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US4841156A (en) * 1987-05-15 1989-06-20 Electronic Instrumentation And Technology, Inc. Measurement of the thickness of thin films
US5227861A (en) * 1989-09-25 1993-07-13 Mitsubishi Denki Kabushiki Kaisha Apparatus for and method of evaluating multilayer thin film
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
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Patent Citations (5)

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US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
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Also Published As

Publication number Publication date
EP1556668A2 (en) 2005-07-27
US6885467B2 (en) 2005-04-26
AU2003276649A1 (en) 2004-05-13
US20040080761A1 (en) 2004-04-29
JP2006504092A (en) 2006-02-02
KR20050083844A (en) 2005-08-26
WO2004038321A2 (en) 2004-05-06
CN1329710C (en) 2007-08-01
AU2003276649A8 (en) 2004-05-13
CN1732372A (en) 2006-02-08

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