WO2004038725A3 - Magnetic memory device - Google Patents

Magnetic memory device Download PDF

Info

Publication number
WO2004038725A3
WO2004038725A3 PCT/GB2003/004552 GB0304552W WO2004038725A3 WO 2004038725 A3 WO2004038725 A3 WO 2004038725A3 GB 0304552 W GB0304552 W GB 0304552W WO 2004038725 A3 WO2004038725 A3 WO 2004038725A3
Authority
WO
WIPO (PCT)
Prior art keywords
current
magnetic
current amount
layer
amount
Prior art date
Application number
PCT/GB2003/004552
Other languages
French (fr)
Other versions
WO2004038725A2 (en
Inventor
Carsten Heide
Original Assignee
Btg Int Ltd
Carsten Heide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/278,008 external-priority patent/US6775183B2/en
Priority claimed from US10/278,005 external-priority patent/US6639830B1/en
Application filed by Btg Int Ltd, Carsten Heide filed Critical Btg Int Ltd
Priority to EP03758339A priority Critical patent/EP1556862A2/en
Priority to AU2003274354A priority patent/AU2003274354A1/en
Publication of WO2004038725A2 publication Critical patent/WO2004038725A2/en
Publication of WO2004038725A3 publication Critical patent/WO2004038725A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

Abstract

A magnetic memory cell is provided which comprises a first stack of one or more conductive layers having at least one first magnetic layer with a first magnetic moment, a second stack of one or more conductive layers having least one second magnetic layer with a second magnetic moment, a third stack of one or more non­magnetic layers, that is arranged between and contacting said first and said second stacks and allows a non-tunnelling current to pass. Furthermore, the magnetic memory cell comprises a current control element allowing a current of up to at least a predetermined writing current amount to pass across the cell in a first direction perpendicular to the layer planes, and prohibiting a current to pass across the cell in a second direction opposite to said first direction, unless the current amount in the second direction is higher than a predetermined reading current amount, which reading current amount is lower than said writing amount. The extensions of said layer stacks in a direction perpendicular to the layer planes, as well as the materials of said layer stacks are adapted to allow a change of an orientation of said first and second magnetic moments relative to each other with the aid of a current of at least said writing current amount, and to influence a current amount across the cell of at most said reading current amount by a giant magnetoresistance effect.
PCT/GB2003/004552 2002-10-22 2003-10-22 Magnetic memory device WO2004038725A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03758339A EP1556862A2 (en) 2002-10-22 2003-10-22 Magnetic memory device
AU2003274354A AU2003274354A1 (en) 2002-10-22 2003-10-22 Magnetic memory device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/278,008 US6775183B2 (en) 2002-10-22 2002-10-22 Magnetic memory device employing giant magnetoresistance effect
US10/278,005 US6639830B1 (en) 2002-10-22 2002-10-22 Magnetic memory device
US10/278005 2002-10-22
US10/278008 2002-10-22

Publications (2)

Publication Number Publication Date
WO2004038725A2 WO2004038725A2 (en) 2004-05-06
WO2004038725A3 true WO2004038725A3 (en) 2005-05-06

Family

ID=32179471

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/GB2003/004552 WO2004038725A2 (en) 2002-10-22 2003-10-22 Magnetic memory device
PCT/GB2003/004546 WO2004038723A2 (en) 2002-10-22 2003-10-22 Magnetic memory device

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/004546 WO2004038723A2 (en) 2002-10-22 2003-10-22 Magnetic memory device

Country Status (3)

Country Link
EP (2) EP1556862A2 (en)
AU (2) AU2003274354A1 (en)
WO (2) WO2004038725A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004881B2 (en) * 2007-12-19 2011-08-23 Qualcomm Incorporated Magnetic tunnel junction device with separate read and write paths
SG175482A1 (en) * 2010-05-04 2011-11-28 Agency Science Tech & Res Multi-bit cell magnetic memory with perpendicular magnetization and spin torque switching

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541868A (en) * 1995-02-21 1996-07-30 The United States Of America As Represented By The Secretary Of The Navy Annular GMR-based memory element
GB2343308A (en) * 1998-10-30 2000-05-03 Nikolai Franz Gregor Schwabe Magnetic storage device
US6269018B1 (en) * 2000-04-13 2001-07-31 International Business Machines Corporation Magnetic random access memory using current through MTJ write mechanism

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
FR2817999B1 (en) * 2000-12-07 2003-01-10 Commissariat Energie Atomique MAGNETIC DEVICE WITH POLARIZATION OF SPIN AND A STRIP (S) TRI-LAYER (S) AND MEMORY USING THE DEVICE
FR2817998B1 (en) * 2000-12-07 2003-01-10 Commissariat Energie Atomique SPIN POLARIZATION MAGNETIC DEVICE WITH MAGNIFICATION ROTATION, MEMORY AND WRITING METHOD USING THE DEVICE

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541868A (en) * 1995-02-21 1996-07-30 The United States Of America As Represented By The Secretary Of The Navy Annular GMR-based memory element
GB2343308A (en) * 1998-10-30 2000-05-03 Nikolai Franz Gregor Schwabe Magnetic storage device
US6269018B1 (en) * 2000-04-13 2001-07-31 International Business Machines Corporation Magnetic random access memory using current through MTJ write mechanism

Also Published As

Publication number Publication date
EP1559106A2 (en) 2005-08-03
WO2004038723A2 (en) 2004-05-06
AU2003274354A1 (en) 2004-05-13
EP1556862A2 (en) 2005-07-27
WO2004038725A2 (en) 2004-05-06
WO2004038723A3 (en) 2005-05-06
AU2003276387A8 (en) 2004-05-13
AU2003276387A1 (en) 2004-05-13

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