WO2004044949A2 - Probe station with low noise characteristics - Google Patents

Probe station with low noise characteristics Download PDF

Info

Publication number
WO2004044949A2
WO2004044949A2 PCT/US2003/033842 US0333842W WO2004044949A2 WO 2004044949 A2 WO2004044949 A2 WO 2004044949A2 US 0333842 W US0333842 W US 0333842W WO 2004044949 A2 WO2004044949 A2 WO 2004044949A2
Authority
WO
WIPO (PCT)
Prior art keywords
conductor
dielectric
cable
layer
guard
Prior art date
Application number
PCT/US2003/033842
Other languages
French (fr)
Other versions
WO2004044949A3 (en
Inventor
Timothy Lesher
Brad Miller
Clarence E. Cowan
Michael Simmons
Frank Gray
Cynthia L. Mcdonald
Original Assignee
Cascade Microtech, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cascade Microtech, Inc. filed Critical Cascade Microtech, Inc.
Priority to JP2005507057A priority Critical patent/JP2006505961A/en
Priority to AU2003291650A priority patent/AU2003291650A1/en
Priority to EP03768538A priority patent/EP1559116A4/en
Publication of WO2004044949A2 publication Critical patent/WO2004044949A2/en
Publication of WO2004044949A3 publication Critical patent/WO2004044949A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/18—Screening arrangements against electric or magnetic fields, e.g. against earth's field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0053—Noise discrimination; Analog sampling; Measuring transients
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2889—Interfaces, e.g. between probe and tester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B11/00—Communication cables or conductors
    • H01B11/18—Coaxial cables; Analogous cables having more than one inner conductor within a common outer conductor
    • H01B11/20—Cables having a multiplicity of coaxial lines
    • H01B11/206—Tri-conductor coaxial cables
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Definitions

  • T e present invention relates to probe stations which are used for probing
  • test devices such as integrated circuits on a wafer, and, in particular, to probe stations
  • Probe stations typically include a chuck that supports the
  • a dry air ventilation system as well as a
  • EMI shielding structures within or around the environmental enclosures in order to provide an electrically quiet environment, often essential during low noise or current testing where electrical noise from external electromagnetic sources can hinder accurate measurement of the electrical device's characteristics.
  • Probe stations incorporating EMI shielding structures will usually at least
  • EMI shielding structures may include
  • the environmental enclosure is typically connected to
  • existing probe stations may include a multistage chuck upon which the electrical device
  • a middle stage and a bottom stage of the chuck similarly comprise
  • an electrical device resting on such a multistage chuck may be both guarded and shielded from below.
  • FIG. 1 shows a generalized schematic of an existing probe station.
  • probe station 10 includes a chuck 12 that supports an electrical device 14 to be probed by a probe apparatus 16 supported by a platen 18 located above the chuck 12.
  • the chuck is
  • the enclosure 20 may be
  • the tub enclosure 20 at least partially surrounds the chuck 12, and hence the
  • a positioner 22 typically
  • located below the tub enclosure 20, may provide vertical, lateral and/or angular
  • the size of the tub enclosure 20 may closely surround the chuck
  • FIG. 2 shows a generalized schematic of another probe station 11.
  • FIG. 2 where numerals common with FIG. 1 represent similar elements that
  • the probe station 11 includes the chuck 12 that supports the
  • outer shield box 24 provides sufficient space for the chuck 12 to be moved laterally by the
  • a suspended member 26 electrically interconnected to a guard potential may be readily positioned above the chuck 12.
  • the suspended guard member 26 defines an opening that is aligned with the opening defined by the platen 18 so that the probe apparatus 16 may
  • the suspended guard member 26 provides additional guarding for low noise tests.
  • the outer shield box 24 To provide a substantially closed environment, the outer shield box 24
  • a sliding plate assembly 28 that defines a portion of the lower perimeter of the
  • the sliding plate assembly 28 comprises a number of overlapping plate
  • Each plate member defines a central opening 30 through which the positioner
  • Each successively higher plate member is smaller in size and also defines
  • sliding plate assembly 28 is included to permit lateral movement of the positioner 22, and
  • a dielectric board typically includes a dielectric board as a base.
  • a plurality of probing devices are mounted
  • the probing devices which may, for example, comprise slender conductive needles, terminate below the opening in a pattern suitable for probing the contact sites of the test device.
  • the probing devices are individually connected to the respective channels of a test instrument by a plurality of interconnecting lines, where the portion of each line that extends
  • test devices are integrated circuits
  • the probe card is mounted by means of a supporting
  • each device thereon is consecutively brought into contact with the needles or probing
  • probe cards that are specially adapted for use in
  • probe card measuring ultra-low currents (down to the femtoamp region or lower), probe card
  • guard conductors are connected to a low impedance path to ground.
  • probe cards have
  • each probing device is constructed using a thin blade of ceramic material, which is a material known to have a relatively high volume resistivity.
  • An elongate conductive trace is provided on one side of the blade to form the signal line and a backplane conductive surface is provided on the other side of the blade for guarding purposes.
  • the probing element of this device is formed by a slender conductive needle, such as of
  • each blade is connected to the guard conductor of the corresponding cable and also to
  • each conductive path is guarded by the backplane conductor on the opposite side
  • the entire glass-epoxy main board is replaced with a board of ceramic material, which material, as noted above, presents a relatively high resistance to leakage currents.
  • the lead-in wires are
  • Each pad is connected to the signal path of a corresponding
  • This pogo carousel uses pogo pins to form a plurality of signal lines that
  • resistance insulators has been taken to its practical limit, that is, the insulator that would
  • triboelectric currents can arise between the guard conductor and the inner dielectric due to friction there between which causes free electrons to rub off the conductor and creates a charge buildup resulting in current flow.
  • probe card for measuring low- level currents
  • surface contaminants such as oils and salts from the skin or residues left by solder flux
  • the card may not be suitably connected to the test instrument or the instrument may not be properly calibrated so as to completely null out, for example, the effects of voltage and current offsets.
  • the probe card or the interconnecting lines can serve as pickup sites for ac (alternating current) fields, which ac fields can be rectified by the input circuit of the test instrument so as to cause errors in the
  • a chuck typically includes an upper conductive surface in contact with the
  • One or more additional layers are typically included below the upper
  • upper conductive surface may be electrically connected to the signal path, while the
  • the chuck may be surrounded laterally with a conductive ring that
  • a plate may be
  • thermal chucks i.e., chucks that provide a range of
  • temperatures typically include heater circuits which emanate electrical signals into the region of the device under test, and hence the signal path.
  • thermal chucks may include fluid paths, such as tubular cavities, within the chuck that carry hot or cold fluids that likewise result in noise in the signal path.
  • thermal chucks are constructed of a variety of different materials, such as different conductive materials and different dielectric materials, all of which expand and contract at different rates further exasperating the potential of undesired noise in the test signal.
  • different temperatures change the relative humidity in the probe station, which in turn, change the amount of moisture absorbed by the dielectric materials, which in turn, change the impedance of the materials therein, and thus may result in variable leakage currents in the test signal.
  • the service loop is a flexible support that maintains all the hoses, the
  • the vibrations of the probe station all potentially results in undesirable currents in the signal path.
  • magnetic and capacitive coupling between the power and ground conductors to the signal conductor likewise results in undesirable currents in the signal path.
  • the service loop itself is normally constructed of metal or otherwise includes metal bands, which likewise « radiates electromagnetic signals that may result in undesirable currents in the signal path. All of these design considerations are in addition to considerations regarding the selection of construction materials and assembly considerations similar to those of probe cards.
  • the lid of the enclosure may have vibrational mechanical
  • stage motors may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure, power supplies may be located adjacent the enclosure.
  • stepper motor drivers may be located adjacent to the enclosure
  • personal computers may be located adjacent to the enclosure
  • computer monitors may be located adjacent to the enclosure
  • 60 hertz power sources may be located adjacent to the enclosure, etc., all of which may result in undesirable noise.
  • probing device the probe card, the service loop, and other aspects of the probe station,
  • FIG. 1 illustrates an existing probe station
  • FIG. 2 illustrates another existing probe station
  • FIG. 3 illustrates a test instrument and associated buffers for a cable.
  • FIG. 4 illustrates a tri-axial cable.
  • FIG. 5 illustrates the tri-axial cable of FIG. 4.
  • FIG. 6 illustrates another tri-axial cable. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • the tri-axial cabling is to measure the bulk resistance layer to layer, such as signal to
  • the test instrumentation normally includes a signal
  • a guard unity gain amplifier connected to the output of the
  • signal buffer provides a high impedance path between the signal and the guard together
  • the tri-axial cables deteriorate from contaminants from the insulation wrapped around the
  • conductors including for example, flux and tinning (tin oxide flaking).
  • the present inventors added an additional layer of conductive material between the shield material and the adjacent dielectric layer which covers in excess of 95% of the dielectric layer, and covers
  • the capacitive charge buildup typically referred to as triboelectric currents
  • triboelectric currents couples from the layer or layers external to the guard conductor to the signal conductor, and are observed as noise.
  • modified cables illustrates a decay time of approximately 15-30 seconds to 10% of its
  • cables exhibits a decay time of approximately 1-5 seconds to 10% of its initial value.
  • the modified cable has a settling time of at least three times as fast as the
  • the low-noise cables include conductive and dielectric layers in coaxial
  • included in the probe station enables probing using ultra- low currents of less than one femtoamp.
  • FIG. 4 shows a transverse sectional view through an exemplary cable 30.
  • This portion which is of tri-axial construction, includes an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conductor or core 50, an inner conduct
  • inner dielectric 52 an inner layer 54, a guard conductor 56, an outer dielectric 58, an
  • outer layer 60 a shield conductor 62, and an insulative jacket 64.
  • the inner layer 54 and
  • outer layer 60 are of suitable composition for reducing triboelectric current generation
  • the inner layer 54 and outer layer 60 should have physical properties similar to that of the inner dielectric 52 so that it
  • layer 54 and outer layer 60 should have sufficient conductive properties to dissipate any
  • a fluoropolymer such as TEFLON (TM) or other insulative material such as
  • a sputtering technique may be used to apply a suitable sputtering technique
  • the shield and guard conductors may be
  • FIG. 5 An exemplary cable is illustrated in FIG. 5. It is to be understood that
  • Another exemplary cable is
  • FIG. 6 that includes additional layers of triboelectric reducing materials
  • any one or more of the triboelectric reducing layers may be included.
  • the inner layer 54 may be omitted, if desired.
  • such cables may be suitable for medical devices.
  • the primary problem is not how best to suppress the leakage currents that flow between the different signal channels but rather
  • This layer in particular, includes a nonmetallic portion that is

Abstract

A cable (30) includes an inner conductor (50), an inner dielectric (52), and a guard conductor (56), where the inner dielectric (52) is between the inner conductor (50) and the guard conductor (56). The cable also includes an outer dielectric (58), and a shield conductor (62), where the outer dielectric (58) is between the guard conductor (56) and the shield conductor (62). The cable further includes an additional layer of material between the outer dielectric and the shield conductor (30) of suitable composition for reducing triboelectric current generation between the outer dielectric (58) and the shield conductor (62) to less than that which would occur were the outer dielectric and the shield conductor to directly adjoin each other.

Description

PROBE STATION WITH LOW NOISE CHARACTERISTICS
BACKGROUND OF THE INVENTION
T e present invention relates to probe stations which are used for probing
test devices, such as integrated circuits on a wafer, and, in particular, to probe stations
that are suitable for use in measuring ultra-low currents.
Probe stations are designed to measure the characteristics of electrical
devices such as silicon wafers. Probe stations typically include a chuck that supports the
electrical device while it is being probed by needles or contacts on a membrane situated
above the chuck. In order to provide a controlled environment to probe the electrical
device, many of today's probe stations surround the chuck with an environmental
enclosure so that temperature, humidity, etc. may be held within predetermined limits
during testing. Environmental enclosures protect the device from spurious air currents
that would otherwise affect measurements, and also facilitate thermal testing of electrical
devices at other-than-ambient environmental conditions. Environmental conditions
within the enclosure are principally controlled by a dry air ventilation system as well as a
temperature element, usually located below the chuck, that heats or cools the electrical
device being tested through thermal conduction.
Many probe stations also incorporate guarding and electromagnetic
interference (EMI) shielding structures within or around the environmental enclosures in order to provide an electrically quiet environment, often essential during low noise or current testing where electrical noise from external electromagnetic sources can hinder accurate measurement of the electrical device's characteristics. Guarding and EMI
shielding structures are well known and discussed extensively in technical literature. See,
for example, an article by William Knauer entitled "Fixturing for Low Current/Low
Voltage Parametric Testing" appearing in Evaluation Engineering, November, 1990,
pages 150-153.
Probe stations incorporating EMI shielding structures will usually at least
partially surround the test signal with a guard signal that closely approximates the test
signal, thus inhibiting electromagnetic current leakage from the test signal path to its
immediately surrounding environment. Similarly, EMI shielding structures may include
interconnecting a shield potential to the environmental enclosure surrounding much of the perimeter of the probe station. The environmental enclosure is typically connected to
earth ground, instrumentation ground, or some other desired potential.
To provide guarding and shielding for systems of the type just described,
existing probe stations may include a multistage chuck upon which the electrical device
rests when being tested. The top stage of the chuck, which supports the electrical device,
typically comprises a solid, electrically conductive metal plate through which the test
signal may be routed. A middle stage and a bottom stage of the chuck similarly comprise
solid electrically conductive plates through which a guard signal and a shield signal may
be routed, respectively. In this fashion, an electrical device resting on such a multistage chuck may be both guarded and shielded from below.
FIG. 1 shows a generalized schematic of an existing probe station. A
probe station 10 includes a chuck 12 that supports an electrical device 14 to be probed by a probe apparatus 16 supported by a platen 18 located above the chuck 12. The chuck is
fixedly and/or rigidly interconnected with a tub enclosure 20. The enclosure 20 may be
conductive and electrically connected to a guard signal, shield signal, ground signal, or
floating. The tub enclosure 20 at least partially surrounds the chuck 12, and hence the
electrical device 14.
Multiple electrical devices contained on a silicon wafer may be
successively positioned below the probe apparatus 16 for testing by moving the
combination of the tub enclosure 20 and chuck 12 laterally. A positioner 22, typically
located below the tub enclosure 20, may provide vertical, lateral and/or angular
adjustments of the chuck 12. Because the chuck 12 does not move laterally with respect
to the tub enclosure 20, the size of the tub enclosure 20 may closely surround the chuck
12, facilitating efficient control of the environment immediately surrounding the chuck
12.
FIG. 2 shows a generalized schematic of another probe station 11.
Referring to FIG. 2, where numerals common with FIG. 1 represent similar elements that
perform similar functions, the probe station 11 includes the chuck 12 that supports the
electrical device 14 to be probed by the probe apparatus 16 that extends through an
opening in the platen 18. Rather than enclosing the chuck 12 in the tub enclosure 20, an
outer shield box 24 provides sufficient space for the chuck 12 to be moved laterally by the
positioner 22. Because the chuck 12 may freely move within the outer shield box 24, a suspended member 26 electrically interconnected to a guard potential may be readily positioned above the chuck 12. The suspended guard member 26 defines an opening that is aligned with the opening defined by the platen 18 so that the probe apparatus 16 may
extend through the guard member 26 to probe the electrical device 14. When connected
to a guard signal substantially identical to the test signal provided to the probe apparatus
16, the suspended guard member 26 provides additional guarding for low noise tests.
Such a design is exemplified by EP 0 505 981 Bl, incorporated by reference herein. In
addition, multiple boxes insulated from one another for a single probe station have been
used to attempt to reduce the noise, with the inner box connected to instrument ground
and the outer box connected to earth ground.
To provide a substantially closed environment, the outer shield box 24
includes a sliding plate assembly 28 that defines a portion of the lower perimeter of the
shield box 24. The sliding plate assembly 28 comprises a number of overlapping plate
members. Each plate member defines a central opening 30 through which the positioner
22 may extend. Each successively higher plate member is smaller in size and also defines
a smaller opening 30 through which the positioner 22 extends. As shown in FIG. 2, the
sliding plate assembly 28 is included to permit lateral movement of the positioner 22, and
hence the chuck 12, while maintaining a substantially closed lower perimeter for the
shield box 24.
A probe card for probing the device under test of the probe station
typically includes a dielectric board as a base. A plurality of probing devices are mounted
in radial arrangement about an opening in the board so that the probing elements of these
devices, which may, for example, comprise slender conductive needles, terminate below the opening in a pattern suitable for probing the contact sites of the test device. The probing devices are individually connected to the respective channels of a test instrument by a plurality of interconnecting lines, where the portion of each line that extends
between the corresponding probing device and the outer edge of the dielectric board may
comprise an interconnecting cable or a conductive trace pattern formed directly on the
board. In one conventional type of setup where the test devices are integrated circuits
formed on a semiconductive wafer, the probe card is mounted by means of a supporting
rig or test head above the wafer, and a support beneath the wafer moves the wafer so that
each device thereon is consecutively brought into contact with the needles or probing
elements of the probe card.
With particular regard to probe cards that are specially adapted for use in
measuring ultra-low currents (down to the femtoamp region or lower), probe card
designers have been concerned with developing techniques for eliminating or at least
reducing the effects of leakage currents, which are unwanted currents that can flow into a
particular cable or channel from surrounding cables or channels so as to distort the
current measured in that particular cable or channel. For a given potential difference
between two spaced apart conductors, the amount of leakage current that will flow
between them will vary depending upon the volume resistivity of the insulating material
that separates the conductors, that is, if a relatively lower-resistance insulator is used, this
will result in a relatively higher leakage current. Thus, a designer of low-current probe
cards will normally avoid the use of rubber-insulated single-core wires on a glass-epoxy board since rubber and glass-epoxy materials are known to be relatively low-resistance insulators through which relatively large leakage currents can flow. One technique that has been used for suppressing interchannel leakage
currents is surrounding the inner core of each lead-in wire with a cylindrical "guard"
conductor, which is maintained at nearly the same potential as the inner core by a
feedback circuit in the output channel of the test instrument. Because the voltage
potentials of the outer guard conductor and the inner conductive core are made to
substantially track each other, negligible leakage current will flow across the inner
dielectric that separates these conductors regardless of whether the inner dielectric is
made of a low- or high-resistivity material. Although leakage current can still flow
between the guard conductors of the respective cables, this is typically not a problem
because these guard conductors are connected to a low impedance path to ground. By
using this guarding technique, significant improvement may be realized in the low-level
current measuring capability of certain probe card designs.
To further improve low-current measurement capability, probe cards have
been constructed so as to minimize leakage currents between the individual probing
devices which mount the probing needles or other elements. With respect to these
devices, higher-resistance insulating materials have been substituted for lower-resistance
materials and additional conductive surfaces have been arranged about each device in order to perform a guarding function in relation thereto. In one type of assembly, for
example, each probing device is constructed using a thin blade of ceramic material, which is a material known to have a relatively high volume resistivity. An elongate conductive trace is provided on one side of the blade to form the signal line and a backplane conductive surface is provided on the other side of the blade for guarding purposes. The probing element of this device is formed by a slender conductive needle, such as of
tungsten, which extends in a cantileyered manner away from the signal trace. Such
devices are commercially available, for example, from Cerprobe Corporation based in
Tempe, Ariz. During assembly of the probe card, the ceramic blades are edge-mounted in
radial arrangement about the opening in the card so that the needles terminate within the
opening in a pattern suitable for probing the test device. The conductive backplane on
each blade is connected to the guard conductor of the corresponding cable and also to
corresponding conductive pad or "land" adjacent the opening in the probe card. In this
manner each conductive path is guarded by the backplane conductor on the opposite side
of the blade and by the conductive land beneath it.
It has been found, however, that even with the use of guarded cables and
ceramic probing devices of the type just described, the level of undesired background
current is still not sufficiently reduced as to match the capabilities of the latest generation
of commercially available test instruments, which instruments are able to monitor
currents down to one femtoamp or less.
In the latest generation of probe cards, efforts have been directed toward
systematically eliminating low-resistance leakage paths within the probe card and toward
designing extensive and elaborate guarding structures to surround the conductors along
the signal path. For example, in one newer design, the entire glass-epoxy main board is replaced with a board of ceramic material, which material, as noted above, presents a relatively high resistance to leakage currents. In this same design, the lead-in wires are
replaced by conductive signal traces formed directly on the main board, which traces extend from an outer edge of the main board to respective conductive pads that surround
the board opening. Each pad, in turn, is connected to the signal path of a corresponding
ceramic blade. In addition, a pair of guard traces are formed on either side of each signal
trace so as to further isolate each trace against leakage currents.
In yet another of these newer designs, a main board of ceramic material is
used having three-active layers to provide three dimensional guarding. Above this main
board and connected thereto is a four-quadrant interface board that includes further guard
structures.. Between these two board assemblies is a third unit including a "pogo
carousel." This pogo carousel uses pogo pins to form a plurality of signal lines that
interconnect the interface board and the lower main board. It will be recognized that in
respect to these pogo pins, the effort to replace lower resistance insulators with higher
resistance insulators has been taken to its practical limit, that is, the insulator that would
normally surround the inner conductor has been removed altogether.
From the foregoing examples, it will be seen that a basic concern in the art
has been the suppression of inter-channel leakage currents. Using these newer designs, it
is possible to measure currents down to nearly the femtoamp level. However, the ceramic
material used in these newer designs is relatively more expensive than the glass-epoxy material it replaces. Another problem with ceramic materials is that they are relatively
susceptible to the absorption of surface contaminants such as can be deposited by the skin
during handling of the probe card. These contaminants can decrease the surface resistivity of the ceramic material to a sufficient extent as to produce a substantial increase in leakage current levels. In addition, the more extensive and elaborate guarding structures that are used in these newer designs has contributed to a large increase in design and assembly costs. Based on these developments it may be anticipated that only gradual improvements in the low-current measurement capability of the cards is likely to come about, which improvements, for example, will result from increasingly more elaborate guarding systems or from further research in the area of high resistance insulative materials.
In addition to suppressing leakage currents that flow between the different signal channels, low noise cables that reduce the triboelectric effect have been used on a probe card. In a guarded coaxial cable, triboelectric currents can arise between the guard conductor and the inner dielectric due to friction there between which causes free electrons to rub off the conductor and creates a charge buildup resulting in current flow.
It should also be noted that there are other factors unrelated to design that can influence whether or not the potential of a particular probe card for measuring low- level currents will be fully realized. For example, unless special care is taken in , assembling the probe card, it is possible for surface contaminants, such as oils and salts from the skin or residues left by solder flux, to contaminate the surface of the card and to degrade its performance (due to their ionic character, such contaminants can produce undesirable electrochemical effects). Furthermore, even assuming that the card is designed and assembled properly, the card may not be suitably connected to the test instrument or the instrument may not be properly calibrated so as to completely null out, for example, the effects of voltage and current offsets. In addition, the probe card or the interconnecting lines, can serve as pickup sites for ac (alternating current) fields, which ac fields can be rectified by the input circuit of the test instrument so as to cause errors in the
indicated dc values. Thus, it is necessary to employ proper shielding procedures in respect
to the probe card, the interconnecting lines and the test instrument in order to shield out
these field disturbances. Due to these factors and others, when a new probe card design is
being tested, it can be extremely difficult to isolate the causes of undesirable background
current in the new design due to the numerous and possibly interacting factors that may
be responsible.
A chuck typically includes an upper conductive surface in contact with the
device under test. One or more additional layers are typically included below the upper
conductive surface while being electrically isolated from one another. In this manner, the
upper conductive surface may be electrically connected to the signal path, while the
remaining layers may be electrically connected to the guard potential and shield potential,
if desired. In addition, the chuck may be surrounded laterally with a conductive ring that
may likewise be electrically connected to a guard or shield potential. In this manner, the
device under test is guarded from below and to the side in order to reduce the electrical
noise and leakage current that exists in the measurement of devices. Also, a plate may be
suspended above the chuck (normally with an opening therein) and electrically interconnected to a guard or shield potential.
While such guarding and shielding reduces the amount of noise in the
signal path, designers of such chucks must consider numerous other factors that influence the measurement. For example, thermal chucks (i.e., chucks that provide a range of
temperatures) typically include heater circuits which emanate electrical signals into the region of the device under test, and hence the signal path. In addition, thermal chucks may include fluid paths, such as tubular cavities, within the chuck that carry hot or cold fluids that likewise result in noise in the signal path. Furthermore, thermal chucks are constructed of a variety of different materials, such as different conductive materials and different dielectric materials, all of which expand and contract at different rates further exasperating the potential of undesired noise in the test signal. Moreover, different temperatures change the relative humidity in the probe station, which in turn, change the amount of moisture absorbed by the dielectric materials, which in turn, change the impedance of the materials therein, and thus may result in variable leakage currents in the test signal.
' With respect to thermal and non-thermal chucks there may be ground currents from the chuck to the test instrument that impact the sensed current in the signal path. During the probing of different parts of the device under test, the capacitive coupling (and magnetic coupling) of different portions of the chuck, and the capacitive coupling (and magnetic coupling) of the chuck relative to the enclosure changes, thereby inducing voltage changes. Furthermore, vibrations of the probe station itself, and thus the chuck located therein, as a result of testing, as a result of the external environment, and as a result of the air flowing within the probe station likewise induces undesirable leakage currents and noise in the signal path.
As it may be observed, due to these and other factors, when a new chuck design is being tested, it can be extremely difficult to isolate the causes of undesirable background current in the new design due to the numerous and possibly interacting factors that may be responsible.
To interconnect the chuck to the test instrumentation a service loop is
normally used. The service loop is a flexible support that maintains all the hoses, the
power cables, the signal cables, the instrumentation cables, and the sensor wiring, in a compact manner adjacent to one another while the chuck moves within the enclosure. The vibrations of the probe station, the vibrations from air blowing across the cables, the vibrations of the cables after moving the chuck, the vibrations from stepper motors connected to the chuck, the vibrations from flowing coolant in the hoses of the service loops, etc., all potentially results in undesirable currents in the signal path. In addition, magnetic and capacitive coupling between the power and ground conductors to the signal conductor likewise results in undesirable currents in the signal path. Further, the service loop itself is normally constructed of metal or otherwise includes metal bands, which likewise « radiates electromagnetic signals that may result in undesirable currents in the signal path. All of these design considerations are in addition to considerations regarding the selection of construction materials and assembly considerations similar to those of probe cards.
As it may be observed, due to these factors, when a service loop design is being tested, it can be extremely difficult to isolate the causes of undesirable background current in the new design due to the numerous and possibly interacting factors that may be responsible. The enclosure for the chuck, the service loop, the probe card, and the
device under test likewise also includes potential sources of undesirable currents in the
signal path. As an initial matter, the lid of the enclosure may have vibrational mechanical
motion which results in a change in capacitance between the lid and the chuck, and a
probe supported by the lid and the chuck, thus causing some undesirable currents in the
signal path, in accordance with movement of the lid. In addition, there may be electrical
surface charges on interior surfaces of the probe station, and other components contained
therein, which also result in potentially undesirable currents in the signal path. Other
structures within the enclosure can likewise result in undesirable currents in the signal
path, such as for example, sliding plates below the chuck, conductive coated baffles
below the chuck, air flow within the enclosure, motors for moving the chuck, position
sensors, sensor wires, and dew. meters. Furthermore, during testing of the device under
test the probes themselves introduce external radiating signals into the probing
environment in the vicinity of the device under test. All of these design considerations
are in addition to considerations regarding the selection of construction materials and
assembly considerations similar to those of probe cards.
In addition to those items contained within the enclosure of the probe
station, there are additional sources of potential noise in the signal path located near the
enclosure. The stage motors may be located adjacent the enclosure, power supplies may
be adjacent the enclosure, stepper motor drivers may be located adjacent to the enclosure, personal computers may be located adjacent to the enclosure, computer monitors may be located adjacent to the enclosure, 60 hertz power sources may be located adjacent to the enclosure, etc., all of which may result in undesirable noise.
As it may be observed, due to these and other factors, when a probe station
itself is being tested, it can be extremely difficult to isolate the causes of undesirable
background current in the new design due to the numerous and possibly interacting
factors that may be responsible.
As it may be observed, due to interrelated factors related to the chuck, the
probing device, the probe card, the service loop, and other aspects of the probe station,
when the entire probe station itself is being tested, it can be extremely difficult to isolate
the causes of undesirable background current in the new design due to the numerous and
possibly interacting factors that may be responsible. Accordingly, with each design and
with increasingly lower noise requirements, it is exceedingly difficult to determine the
primary source of the noise in the signal path.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates an existing probe station
FIG. 2 illustrates another existing probe station
FIG. 3 illustrates a test instrument and associated buffers for a cable. FIG. 4 illustrates a tri-axial cable. FIG. 5 illustrates the tri-axial cable of FIG. 4.
FIG. 6 illustrates another tri-axial cable. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
During the assembly process of probe stations many different aspects
related to noise levels of the signals are measured. One of the tests that is performed on
the tri-axial cabling is to measure the bulk resistance layer to layer, such as signal to
guard and guard to shield. Another test that is performed on the tri-axial cabling is to
provide a known voltage, such as 0 volts to 10 volts, and measure any current variations
between the signal conductor (force path) and the guard conductor.
Referring to FIG. 3, the test instrumentation normally includes a signal
buffer to drive the signal line. A guard unity gain amplifier connected to the output of the
signal buffer provides a high impedance path between the signal and the guard together
with imposing a signal on the guard conductor that tracks the signal on the signal
conductor. While having the potential on the guard conductor exactly track the potential
on the signal conductor is ideal, in actual test instrumentation there is a small delta
voltage potential between the signal and guard while performing measurements. The
potential on the guard conductor increases the effective leakage resistance between the
signal conductor and shield conductor. For example, if the delta voltage was 0.10%
difference then the leakage resistance between the signal conductor and the shield
conductor would be approximately 1,000 times greater than it otherwise would have been. In effect the leakage resistance between signal and- shield is increased 1,000 times, thus decreasing leakage currents. Similarly, the capacitance between the signal and shield is decreased by 1,000 times in comparison to not having a guard conductor. When testing indicates leakage current problems with any particular tri-
axial cable normally the connector to the cable was improperly connected or
contaminants in the assembly process occurred. In addition, over time it is believed that
the tri-axial cables deteriorate from contaminants from the insulation wrapped around the
conductors, including for example, flux and tinning (tin oxide flaking).
Normally the shield material, which it is speculated by the present
inventors may result in tinning, is a braided mesh material constructed of thin wires. To
reduce the likelihood of tinning the present inventors considered the coverage provided
by the shield and determined that a 10-15% gap exists between the wires. After
consideration of this previously unconsidered gap in the shield material, the present
inventors thought that by reducing the aperture between the wires that this would
decrease the likelihood that electromagnetic waves exterior to the cable itself would be
able to penetrate between the wires to the guard layer underneath. In addition, the mesh
of small long wires tend to have a significant resistance, such as 1 ohm or more. To
reduce the resistance of the braid the present inventors further considered using thicker
gage wires, which would likely result in large openings that is counter to the goal of
decreasing the opening side, or otherwise using one or more large wires to act as low resistance paths, while would likely result in a significantly more expensive cable. In
addition, the present inventors considered increasing the distance between the guard and
shield conductors to decrease any potential capacitive coupling. To reduce the likelihood that signals will pass through the openings in the mesh, the present inventors added an additional layer of conductive material between the shield material and the adjacent dielectric layer which covers in excess of 95% of the dielectric layer, and covers
substantially 100% in combination with the shield material, in profile.
To test the new cable design, the present inventors put the cable in a metal
cylinder and imposed a strong radio frequency signal onto the conductive cylinder while
measuring any induced noise on the signal conductor. The measurement of the noise
levels involves connecting the cable to the test instrumentation and positioning the cable
in a desirable location. It would be expected that the noise level would decrease
significantly as a result of the additional conductive material, but in utter surprise to the
present inventors the noise level in fact did not noticeably change, apart from a decrease
in the capacitive coupling because of the increased distance between the shield conductor
and the signal conductor. Accordingly, it was initially considered that modification of the
cable to include an additional conductive layer adjacent the shield to reduce the potential
for electromagnetic signals to pass through was of no perceived value.
While conducting such noise tests the present inventors observed a
phenomena not commonly associated with such measurement characteristics, namely,
that the settling time of the current signals within the modified cables were reduced in
comparison to non-modified cables. In addition, the settling time of the cables is not
normally a characterized parameter of the cable so accordingly noticing the difference
required an astute, and generally overlooked, observation on the part of the present
inventors. Based upon these realizations, the present inventors constructed a further test that involved comparing whether the modified cables were less sensitive to table (surface)
vibrations than non-modified cables. The present inventors were surprised to determine that in fact the noise level in the modified cables when laid on the table outside of the
conductive tubular member were in fact less than the non-modified cables. After coming
to this rather unexpected realization, the present inventors then reconsidered the structure
of the modified cables and came to the realization that the vibrational motion of the table,
albeit rather small, was a source of the noise levels observed in the cables. With this
realization of vibrational motion in the tri-axial cables being identified as a principal
source of noise, the present inventors then realized that non-negligible triboelectric
currents were in fact being generated between the shield conductive layer and the adjacent
dielectric layer, and thereafter impacting signal integrity within the signal conductor.
This unlikely source of noise generation came as an utter astonishment to
the present inventors because the guard buffer amplifier within the test instrumentation is
driving the potential of the guard conductor to that of the signal conductor, and thus
presumably counteracting any external influences. However, apparently the guard
amplifier in the test instrumentation has non-ideal characteristics such that small external
changes are not effectively eliminated, or otherwise the guard conductor does not have
ideal characteristics. In any event, even in a shielded environment it was determined that
a significant source of noise is charge that builds up on the layers between the guard
conductor and the shield conductor, principally as a result of relative movement of these
layers. The capacitive charge buildup, typically referred to as triboelectric currents, couples from the layer or layers external to the guard conductor to the signal conductor, and are observed as noise. For example, a test of the decay of such triboelectric currents for the non-
modified cables illustrates a decay time of approximately 15-30 seconds to 10% of its
initial value. In contrast, a test of the decay of such triboelectric currents for the modified
cables exhibits a decay time of approximately 1-5 seconds to 10% of its initial value.
One way, albeit not the only way or a necessary characteristic, to characterize the
difference is that the modified cable has a settling time of at least three times as fast as the
non-modified cable.
The low-noise cables include conductive and dielectric layers in coaxial
arrangement with each other and further include at least one layer of material between the
guard and the shield within each cable adapted for suppressing the triboelectric effect so
as to minimize any undesirable currents that would otherwise be generated internally in
each cable due to this effect. This layer of material together with certain other structures
included in the probe station enables probing using ultra- low currents of less than one femtoamp.
FIG. 4 shows a transverse sectional view through an exemplary cable 30.
This portion, which is of tri-axial construction, includes an inner conductor or core 50, an
inner dielectric 52, an inner layer 54, a guard conductor 56, an outer dielectric 58, an
outer layer 60, a shield conductor 62, and an insulative jacket 64. The inner layer 54, and
outer layer 60 are of suitable composition for reducing triboelectric current generation
between the inner dielectric 52 and the guard conductor 56, and the outer dielectric 58, and the shield conductor 62, respectively, to less than that which would occur were the inner dielectric 52 and the guard conductor 56, and the outer dielectric 58, and the shield conductor 62, respectively, to directly adjoin each other. The inner layer 54 and outer layer 60 should have physical properties similar to that of the inner dielectric 52 so that it
does not rub excessively against the inner dielectric 52 and outer dielectric 58,
respectively, despite cable flexing or temperature changes. At the same time, the inner
layer 54 and outer layer 60 should have sufficient conductive properties to dissipate any
charge imbalances that may arise due to any free electrons that have rubbed off the guard
conductor 56 or shield conductor 62, respectively. A suitable material for this purpose is
a fluoropolymer such as TEFLON (TM) or other insulative material such as
polyvinylchloride or polyethylene in combination with graphite or other sufficiently
conductive additive. In addition, a sputtering technique may be used to apply a suitable
triboelectric noise reducing layer. Also, the shield and guard conductors may be
impregnated in some manner with triboelectric reducing material.
An exemplary cable is illustrated in FIG. 5. It is to be understood that
additional layers may likewise be included with the cable. Another exemplary cable is
illustrated in FIG. 6, that includes additional layers of triboelectric reducing materials,
where any one or more of the triboelectric reducing layers may be included.
It is to be understood that the inner layer 54 may be omitted, if desired. In
addition it is to be understood that the cable described herein, with the outer layer, or the
combination of the outer layer and the inner layer, may be used for other applications
apart from probe stations. For example, such cables may be suitable for medical devices.
In accordance with the previous discussion, the present inventors have discovered that the primary problem, at least at some stage in the design, is not how best to suppress the leakage currents that flow between the different signal channels but rather
how best to suppress those currents that internally arise in each cable or signal channel as
a result of the triboelectric effect. In a tri-axial cable, triboelectric currents can arise
between the shield conductor and the outer dielectric due to friction there between which
causes free electrons to rub off the conductor and creates a charge imbalance that causes
current to flow. Such triboelectric currents are likewise generated at other interfaces.
Once the inventor recognized that this triboelectric effect might be the critical problem,
he proceeded to test this insight by testing such "low-noise" cables. It will
be noted that the present inventors do not claim to have discovered a new solution to the
problem of the triboelectric effect. A relatively straightforward solution to this problem
can be found in the field of cable technology wherein it is known how to construct a
"low-noise" cable by using an additional layer of material between a guard conductor and
an inner dielectric, which material is of suitable composition for suppressing the
triboelectric effect. This layer, in particular, includes a nonmetallic portion that is
physically compatible with the inner dielectric so as to be prevented from rubbing
excessively against this dielectric and, on the other hand, includes a portion that is
sufficiently conductive that it will immediately dissipate any charge imbalance that may
be created by free electrons that have rubbed off the outer conductor. It is not claimed by
the present inventors that this particular solution to the triboelectric effect problem is his
invention. Rather it is the recognition that this specific problem is a major source of
performance degradation in the field of low-current design and the recognition of the interfaces where such currents may originate. In retrospect, one can speculate as to why the significance of the triboelectric effect was not recognized sooner by investigators in the art of probe station design. One possible reason is that verifying the importance of this effect is not merely a matter of replacing cables with low-noise cables. Because of the non-design related factors specified in the background section, one of ordinary skill who assembled and then tested a probe station that included tri-axial low-noise cables would not necessarily detect the superior capability of this cable for low current measurements. For example, surface contaminants deposited during assembly might raise the background level of current to a sufficient extent that the effect of the low-noise cables is concealed. To this it may be added that the direction taken in the art of probe station design, where the focus has been on the problem of suppressing inter-channel leakage currents.
The terms and expressions which have been employed in the foregoing
specification are used therein as terms of description and not of limitation, and there is no intention, in the use of such terms and expressions, of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined and limited only by the claims which follow.

Claims

CLAIMS:
1. A probe station for probing a device under test comprising:
(a) a support for holding said device under test;
(b) a probing device for testing said device under test while being
supported by said support;
(c) a cable connecting said probing device to a test instrument, said
cable including:
(i) a first conductor, a first dielectric, and a second conductor,
where said first dielectric is between said first conductor
and said second conductor;
(ii) a second dielectric, and a third conductor, where said
second dielectric is between said second conductor and said
third conductor;
(iii) further including a first layer of material between said
second dielectric and said third conductor of suitable
composition for reducing triboelectric current generation
between said second dielectric and said third conductor to
less than that which would occur were said second
dielectric and said third conductor to directly adjoin each other.
2. The probe station of claim 1 further comprising a second layer of material between said first dielectric and said second conductor of suitable composition for
reducing triboelectric current generation between said first dielectric and said second
conductor to less than that which would occur were said first dielectric and said second
conductor to directly adjoin each other.
3. A probe station for probing a device under test comprising:
(a) a support for holding said device under test;
(b) a probing device for testing said device under test while being
supported by said support;
(c) a cable connecting said probing device to a test instrument, said
cable including:
(i) a first conductor, a first dielectric, and a second conductor,
where said first dielectric is between said first conductor
and said second conductor;
(ii) a second dielectric, and a third conductor, where said
second dielectric is between said second conductor and said third conductor;
(iii) further including a first layer of material between said
second dielectric and said second conductor of suitable
composition for reducing triboelectric current generation between said second dielectric and said second conductor to less than that which would occur were said second
dielectric and said second conductor to directly adjoin each other.
4. The probe station of claim 3 further comprising a second layer of material
between said first dielectric and said second conductor of suitable composition for
reducing triboelectric current generation between said first dielectric and said second
conductor to less than that which would occur were said first dielectric and said second
conductor to directly adjoin each other.
5. A probe station for probing a device under test comprising:
(a) a support for holding said device under test;
(b) a probing device for testing said device under test while being
supported by said support;
(c) a cable connecting said probing device to a test instrument, said cable including:
(i) a first conductor, a first dielectric, and a second conductor,
where said first dielectric is between said first conductor
and said second conductor;
(ii) a second dielectric, and a third conductor, where said second dielectric is between said second conductor and said third conductor; (iii) further including a first layer of material between said first
dielectric and said first conductor of suitable composition
for reducing triboelectric current generation between said
first dielectric and said first conductor to less than that
which would occur were said first dielectric and said first
conductor to directly adjoin each other.
6. The probe station of claim 5 further comprising a second layer of material
between said first dielectric and said second conductor of suitable composition for
reducing triboelectric current generation between said first dielectric and said second
conductor to less than that which would occur were said first dielectric and said second
conductor to directly adjoin each other.
7. A cable comprising
(a) a first conductor, a first dielectric, and a second conductor, where
said first dielectric is between said first conductor and said second
conductor;
(b) a second dielectric, and a third conductor, where said second
dielectric is between said second conductor and said third
conductor;
(c) further including a first layer of material between said second dielectric and said third conductor of suitable composition for reducing triboelectric current generation between said second
dielectric and said third conductor to less than that which would
occur were said second dielectric and said third conductor to
directly adjoin each other.
8. The cable of claim 7 further comprising a second layer of material between
said first dielectric and said second conductor of suitable composition for reducing
triboelectric current generation between said first dielectric and said second conductor to
less than that which would occur were said first dielectric and said second conductor to
directly adjoin each other.
9. A cable comprising:
(a) a first conductor, a first dielectric, and a second conductor, where
said first dielectric is between said first conductor and said second conductor;
(b) a second dielectric, and a third conductor, where said second
dielectric is between said second conductor and said third conductor;
(c) further including a first layer of material between said second
dielectric and said second conductor of suitable composition for reducing triboelectric current generation between said second dielectric and said second conductor to less than that which would occur were said second dielectric and said second conductor to
directly adjoin each other.
10. The cable of claim 9 further comprising a second layer of material between
said first dielectric and said second conductor of suitable composition for reducing
triboelectric cuπent generation between said first dielectric and said second conductor to
less than that which would occur were said first dielectric and said second conductor to
directly adjoin each other.
11. A cable comprising:
(a) a first conductor, a first dielectric, and a second conductor, where
said first dielectric is between said first conductor and said second
conductor;
(b) a second dielectric, and a third conductor, where said second
dielectric is between said second conductor and said third
conductor;
(c) further including a first layer of material between said first
dielectric and said first conductor of suitable composition for
reducing triboelectric cuπent generation between said first
dielectric and said first conductor to less than that which would occur were said first dielectric and said first conductor to directly
adjoin each other.
12. The probe station of claim 11 further comprising a second layer of material between said first dielectric and said second conductor of suitable composition for reducing triboelectric cuπent generation between said first dielectric and said second conductor to less than that which would occur were said first dielectric and said second conductor to directly adjoin each other.
PCT/US2003/033842 2002-11-08 2003-10-24 Probe station with low noise characteristics WO2004044949A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005507057A JP2006505961A (en) 2002-11-08 2003-10-24 Low noise probe station
AU2003291650A AU2003291650A1 (en) 2002-11-08 2003-10-24 Probe station with low noise characteristics
EP03768538A EP1559116A4 (en) 2002-11-08 2003-10-24 Probe station with low noise characteristics

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US42498602P 2002-11-08 2002-11-08
US60/424,986 2002-11-08
US10/666,219 US6847219B1 (en) 2002-11-08 2003-09-18 Probe station with low noise characteristics
US10/666,219 2003-09-18

Publications (2)

Publication Number Publication Date
WO2004044949A2 true WO2004044949A2 (en) 2004-05-27
WO2004044949A3 WO2004044949A3 (en) 2004-10-14

Family

ID=32314566

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/033842 WO2004044949A2 (en) 2002-11-08 2003-10-24 Probe station with low noise characteristics

Country Status (6)

Country Link
US (4) US6847219B1 (en)
EP (1) EP1559116A4 (en)
JP (1) JP2006505961A (en)
KR (1) KR100753945B1 (en)
AU (1) AU2003291650A1 (en)
WO (1) WO2004044949A2 (en)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380751B2 (en) * 1992-06-11 2002-04-30 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US5345170A (en) * 1992-06-11 1994-09-06 Cascade Microtech, Inc. Wafer probe station having integrated guarding, Kelvin connection and shielding systems
US5561377A (en) * 1995-04-14 1996-10-01 Cascade Microtech, Inc. System for evaluating probing networks
US6586954B2 (en) * 1998-02-10 2003-07-01 Celadon Systems, Inc. Probe tile for probing semiconductor wafer
US6201402B1 (en) 1997-04-08 2001-03-13 Celadon Systems, Inc. Probe tile and platform for large area wafer probing
US6002263A (en) * 1997-06-06 1999-12-14 Cascade Microtech, Inc. Probe station having inner and outer shielding
US6445202B1 (en) * 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6914423B2 (en) * 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
US6965226B2 (en) * 2000-09-05 2005-11-15 Cascade Microtech, Inc. Chuck for holding a device under test
EP1432546A4 (en) * 2001-08-31 2006-06-07 Cascade Microtech Inc Optical testing device
US6777964B2 (en) * 2002-01-25 2004-08-17 Cascade Microtech, Inc. Probe station
US6847219B1 (en) * 2002-11-08 2005-01-25 Cascade Microtech, Inc. Probe station with low noise characteristics
US7250779B2 (en) * 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
US6861856B2 (en) * 2002-12-13 2005-03-01 Cascade Microtech, Inc. Guarded tub enclosure
US7170305B2 (en) * 2005-02-24 2007-01-30 Celadon Systems, Inc. Apparatus and method for terminating probe apparatus of semiconductor wafer
US6975128B1 (en) * 2003-03-28 2005-12-13 Celadon Systems, Inc. Electrical, high temperature test probe with conductive driven guard
US7792552B2 (en) * 2003-04-15 2010-09-07 Ipventure, Inc. Eyeglasses for wireless communications
US7221172B2 (en) * 2003-05-06 2007-05-22 Cascade Microtech, Inc. Switched suspended conductor and connection
US7492172B2 (en) * 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US7250626B2 (en) * 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
US7187188B2 (en) * 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
US7330041B2 (en) * 2004-06-14 2008-02-12 Cascade Microtech, Inc. Localizing a temperature of a device for testing
US20060092505A1 (en) * 2004-11-02 2006-05-04 Umech Technologies, Co. Optically enhanced digital imaging system
US7535247B2 (en) * 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7656172B2 (en) * 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US20060169897A1 (en) * 2005-01-31 2006-08-03 Cascade Microtech, Inc. Microscope system for testing semiconductors
JP4356661B2 (en) * 2005-07-25 2009-11-04 住友電気工業株式会社 Wafer holder and wafer prober equipped with the same
US7671613B1 (en) 2006-01-06 2010-03-02 Lecroy Corporation Probing blade conductive connector for use with an electrical test probe
US9404940B1 (en) 2006-01-06 2016-08-02 Teledyne Lecroy, Inc. Compensating probing tip optimized adapters for use with specific electrical test probes
US9140724B1 (en) 2006-01-06 2015-09-22 Lecroy Corporation Compensating resistance probing tip optimized adapters for use with specific electrical test probes
US7676953B2 (en) * 2006-12-29 2010-03-16 Signature Control Systems, Inc. Calibration and metering methods for wood kiln moisture measurement
US7568946B1 (en) * 2007-01-16 2009-08-04 Keithley Instruments, Inc. Triaxial cable with a resistive inner shield
US7728609B2 (en) 2007-05-25 2010-06-01 Celadon Systems, Inc. Replaceable probe apparatus for probing semiconductor wafer
US8319503B2 (en) 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
JP5487661B2 (en) * 2009-03-19 2014-05-07 ソニー株式会社 Shielded cable
WO2011103461A1 (en) * 2010-02-22 2011-08-25 Cascade Microtech, Inc. Probe station with improved interconnection
US8466704B1 (en) * 2010-04-19 2013-06-18 Altera Corporation Probe cards with minimized cross-talk
CN202177646U (en) * 2011-08-01 2012-03-28 鸿富锦精密工业（深圳）有限公司 Probe rod component
US9086436B2 (en) * 2011-12-19 2015-07-21 Honeywell International Inc. Method of high voltage detection and accurate phase angle measurement in cordless phasing meters
WO2013134568A1 (en) * 2012-03-07 2013-09-12 Advantest Corporation Shielded probe array
US9082526B2 (en) * 2012-06-25 2015-07-14 International Business Machines Corporation Shielded electrical signal cable
US9502155B2 (en) * 2014-08-07 2016-11-22 General Electric Company Coaxial or triaxial seal assembly
US10275000B2 (en) * 2016-09-06 2019-04-30 Google Llc Thermally conductive cables
JP7138463B2 (en) * 2018-03-30 2022-09-16 株式会社日本マイクロニクス prober
KR20200026362A (en) * 2018-08-29 2020-03-11 삼성디스플레이 주식회사 Probe card and test device including the same
US10950369B1 (en) * 2020-07-20 2021-03-16 Dell Products L.P. Inverted cable design for high-speed, low loss signal transmission
KR20220034494A (en) 2020-09-11 2022-03-18 삼성전자주식회사 Probe for detecting near field and near field detecting system including the same
CN113488255B (en) * 2021-06-29 2022-10-04 晶锋集团股份有限公司 Low-transmission-impedance reactance variable-frequency cable material and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2812502A (en) * 1953-07-07 1957-11-05 Bell Telephone Labor Inc Transposed coaxial conductor system
US4365109A (en) * 1980-01-25 1982-12-21 The United States Of America As Represented By The Secretary Of The Air Force Coaxial cable design
US4479690A (en) * 1982-09-13 1984-10-30 The United States Of America As Represented By The Secretary Of The Navy Underwater splice for submarine coaxial cable
US6284971B1 (en) * 1998-11-25 2001-09-04 Johns Hopkins University School Of Medicine Enhanced safety coaxial cables

Family Cites Families (208)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1191486A (en) 1914-03-20 1916-07-18 Edward B Tyler Expansion-joint.
US1337866A (en) 1917-09-27 1920-04-20 Griffiths Ethel Grace System for protecting electric cables
US2142625A (en) 1932-07-06 1939-01-03 Hollandsche Draad En Kabelfab High tension cable
US2197081A (en) 1937-06-14 1940-04-16 Transit Res Corp Motor support
US2264685A (en) 1940-06-28 1941-12-02 Westinghouse Electric & Mfg Co Insulating structure
US2376101A (en) 1942-04-01 1945-05-15 Ferris Instr Corp Electrical energy transmission
US2389668A (en) 1943-03-04 1945-11-27 Barnes Drill Co Indexing mechanism for machine tables
US2471897A (en) 1945-01-13 1949-05-31 Trico Products Corp Fluid motor packing
CH364040A (en) 1960-04-19 1962-08-31 Ipa Anstalt Detection device to check if an element of an electrical installation is live
US3185927A (en) 1961-01-31 1965-05-25 Kulicke & Soffa Mfg Co Probe instrument for inspecting semiconductor wafers including means for marking defective zones
US3193712A (en) 1962-03-21 1965-07-06 Clarence A Harris High voltage cable
US3230299A (en) 1962-07-18 1966-01-18 Gen Cable Corp Electrical cable with chemically bonded rubber layers
US3256484A (en) 1962-09-10 1966-06-14 Tektronix Inc High voltage test probe containing a part gas, part liquid dielectric fluid under pressure and having a transparent housing section for viewing the presence of the liquid therein
US3176091A (en) 1962-11-07 1965-03-30 Helmer C Hanson Controlled multiple switching unit
US3192844A (en) 1963-03-05 1965-07-06 Kulicke And Soffa Mfg Company Mask alignment fixture
US3201721A (en) 1963-12-30 1965-08-17 Western Electric Co Coaxial line to strip line connector
US3405361A (en) 1964-01-08 1968-10-08 Signetics Corp Fluid actuable multi-point microprobe for semiconductors
US3289046A (en) 1964-05-19 1966-11-29 Gen Electric Component chip mounted on substrate with heater pads therebetween
GB1069184A (en) 1965-04-15 1967-05-17 Andre Rubber Co Improvements in or relating to pipe couplings
US3333274A (en) 1965-04-21 1967-07-25 Micro Tech Mfg Inc Testing device
US3435185A (en) 1966-01-11 1969-03-25 Rohr Corp Sliding vacuum seal for electron beam welder
US3408565A (en) 1966-03-02 1968-10-29 Philco Ford Corp Apparatus for sequentially testing electrical components under controlled environmental conditions including a component support mating test head
US3484679A (en) 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
US3609539A (en) 1968-09-28 1971-09-28 Ibm Self-aligning kelvin probe
NL6917791A (en) 1969-03-13 1970-09-15
US3648169A (en) 1969-05-26 1972-03-07 Teledyne Inc Probe and head assembly
US3596228A (en) 1969-05-29 1971-07-27 Ibm Fluid actuated contactor
US3602845A (en) 1970-01-27 1971-08-31 Us Army Slot line nonreciprocal phase shifter
US3654573A (en) 1970-06-29 1972-04-04 Bell Telephone Labor Inc Microwave transmission line termination
US3740900A (en) 1970-07-01 1973-06-26 Signetics Corp Vacuum chuck assembly for semiconductor manufacture
US3642415A (en) * 1970-08-10 1972-02-15 Shell Oil Co Plunger-and-diaphragm plastic sheet forming apparatus
US3700998A (en) 1970-08-20 1972-10-24 Computer Test Corp Sample and hold circuit with switching isolation
US3714572A (en) 1970-08-21 1973-01-30 Rca Corp Alignment and test fixture apparatus
US4009456A (en) 1970-10-07 1977-02-22 General Microwave Corporation Variable microwave attenuator
US3662318A (en) 1970-12-23 1972-05-09 Comp Generale Electricite Transition device between coaxial and microstrip lines
US3662316A (en) 1971-03-12 1972-05-09 Sperry Rand Corp Short base-band pulse receiver
US3710251A (en) 1971-04-07 1973-01-09 Collins Radio Co Microelectric heat exchanger pedestal
US3814888A (en) 1971-11-19 1974-06-04 Gen Electric Solid state induction cooking appliance
US3810017A (en) 1972-05-15 1974-05-07 Teledyne Inc Precision probe for testing micro-electronic units
US3829076A (en) 1972-06-08 1974-08-13 H Sofy Dial index machine
US3858212A (en) 1972-08-29 1974-12-31 L Tompkins Multi-purpose information gathering and distribution system
US3952156A (en) 1972-09-07 1976-04-20 Xerox Corporation Signal processing system
CA970849A (en) 1972-09-18 1975-07-08 Malcolm P. Macmartin Low leakage isolating transformer for electromedical apparatus
US3775644A (en) 1972-09-20 1973-11-27 Communications Satellite Corp Adjustable microstrip substrate holder
US3777260A (en) 1972-12-14 1973-12-04 Ibm Grid for making electrical contact
FR2298196A1 (en) 1973-05-18 1976-08-13 Lignes Telegraph Telephon NON-RECIPROCAL COMPONENT WITH WIDE-BAND SLOT LINE
US3814838A (en) 1973-06-01 1974-06-04 Continental Electronics Mfg Insulator assembly having load distribution support
US3836751A (en) 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US3930809A (en) 1973-08-21 1976-01-06 Wentworth Laboratories, Inc. Assembly fixture for fixed point probe card
US3863181A (en) 1973-12-03 1975-01-28 Bell Telephone Labor Inc Mode suppressor for strip transmission lines
US4001685A (en) 1974-03-04 1977-01-04 Electroglas, Inc. Micro-circuit test probe
US3936743A (en) 1974-03-05 1976-02-03 Electroglas, Inc. High speed precision chuck assembly
US3976959A (en) 1974-07-22 1976-08-24 Gaspari Russell A Planar balun
US3970934A (en) 1974-08-12 1976-07-20 Akin Aksu Printed circuit board testing means
US4042119A (en) 1975-06-30 1977-08-16 International Business Machines Corporation Workpiece positioning apparatus
US4038894A (en) 1975-07-18 1977-08-02 Springfield Tool And Die, Inc. Piercing apparatus
SE407115B (en) * 1975-10-06 1979-03-12 Kabi Ab PROCEDURES AND METAL ELECTRODES FOR THE STUDY OF ENZYMATIC AND OTHER BIOCHEMICAL REACTIONS
US4035723A (en) 1975-10-16 1977-07-12 Xynetics, Inc. Probe arm
US3992073A (en) 1975-11-24 1976-11-16 Technical Wire Products, Inc. Multi-conductor probe
US3996517A (en) 1975-12-29 1976-12-07 Monsanto Company Apparatus for wafer probing having surface level sensing
US4116523A (en) 1976-01-23 1978-09-26 James M. Foster High frequency probe
US4049252A (en) 1976-02-04 1977-09-20 Bell Theodore F Index table
US4008900A (en) 1976-03-15 1977-02-22 John Freedom Indexing chuck
US4099120A (en) 1976-04-19 1978-07-04 Akin Aksu Probe head for testing printed circuit boards
US4115735A (en) 1976-10-14 1978-09-19 Faultfinders, Inc. Test fixture employing plural platens for advancing some or all of the probes of the test fixture
US4093988A (en) 1976-11-08 1978-06-06 General Electric Company High speed frequency response measurement
US4186338A (en) 1976-12-16 1980-01-29 Genrad, Inc. Phase change detection method of and apparatus for current-tracing the location of faults on printed circuit boards and similar systems
US4115736A (en) 1977-03-09 1978-09-19 The United States Of America As Represented By The Secretary Of The Air Force Probe station
US4151465A (en) 1977-05-16 1979-04-24 Lenz Seymour S Variable flexure test probe for microelectronic circuits
US4161692A (en) 1977-07-18 1979-07-17 Cerprobe Corporation Probe device for integrated circuit wafers
US4135131A (en) * 1977-10-14 1979-01-16 The United States Of America As Represented By The Secretary Of The Army Microwave time delay spectroscopic methods and apparatus for remote interrogation of biological targets
US4371742A (en) 1977-12-20 1983-02-01 Graham Magnetics, Inc. EMI-Suppression from transmission lines
US4172993A (en) 1978-09-13 1979-10-30 The Singer Company Environmental hood for testing printed circuit cards
DE2849119A1 (en) 1978-11-13 1980-05-14 Siemens Ag METHOD AND CIRCUIT FOR DAMPING MEASUREMENT, ESPECIALLY FOR DETERMINING THE DAMPING AND / OR GROUP DISTANCE DISTORTION OF A MEASURED OBJECT
US4383217A (en) 1979-01-02 1983-05-10 Shiell Thomas J Collinear four-point probe head and mount for resistivity measurements
US4280112A (en) 1979-02-21 1981-07-21 Eisenhart Robert L Electrical coupler
US4352061A (en) 1979-05-24 1982-09-28 Fairchild Camera & Instrument Corp. Universal test fixture employing interchangeable wired personalizers
US4287473A (en) 1979-05-25 1981-09-01 The United States Of America As Represented By The United States Department Of Energy Nondestructive method for detecting defects in photodetector and solar cell devices
FI58719C (en) * 1979-06-01 1981-04-10 Instrumentarium Oy DIAGNOSTISERINGSANORDNING FOER BROESTKANCER
US4277741A (en) 1979-06-25 1981-07-07 General Motors Corporation Microwave acoustic spectrometer
FI69943C (en) 1979-07-10 1986-05-26 Sumitomo Electric Industries FOERFARANDE FOER BILDANDE AV EN FOERBINDNING FOER EN POLYOLEFINISOLERAD ELEKTRISK LEDNING ELLER KABEL OCH VAERMEKRYMPANDE SLANG FOER GENOMFOERANDE AV FOERFARANDET
JPS5933267B2 (en) * 1979-08-28 1984-08-14 三菱電機株式会社 Failure analysis method for semiconductor devices
US4327180A (en) 1979-09-14 1982-04-27 Board Of Governors, Wayne State Univ. Method and apparatus for electromagnetic radiation of biological material
US4284033A (en) 1979-10-31 1981-08-18 Rca Corporation Means to orbit and rotate target wafers supported on planet member
US4330783A (en) 1979-11-23 1982-05-18 Toia Michael J Coaxially fed dipole antenna
US4365195A (en) 1979-12-27 1982-12-21 Communications Satellite Corporation Coplanar waveguide mounting structure and test fixture for microwave integrated circuits
US4342958A (en) 1980-03-28 1982-08-03 Honeywell Information Systems Inc. Automatic test equipment test probe contact isolation detection method
JPS5953659B2 (en) 1980-04-11 1984-12-26 株式会社日立製作所 Reciprocating mechanism of rotating body in vacuum chamber
US4284682A (en) 1980-04-30 1981-08-18 Nasa Heat sealable, flame and abrasion resistant coated fabric
US4357575A (en) 1980-06-17 1982-11-02 Dit-Mco International Corporation Apparatus for use in testing printed circuit process boards having means for positioning such boards in proper juxtaposition with electrical contacting assemblies
US4346355A (en) 1980-11-17 1982-08-24 Raytheon Company Radio frequency energy launcher
JPS6041583B2 (en) * 1981-03-23 1985-09-18 日清製油株式会社 Manufacturing method for retort salad
US4376920A (en) 1981-04-01 1983-03-15 Smith Kenneth L Shielded radio frequency transmission cable
JPS57169244A (en) 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer
US4414638A (en) 1981-04-30 1983-11-08 Dranetz Engineering Laboratories, Inc. Sampling network analyzer with stored correction of gain errors
US4425395A (en) 1981-04-30 1984-01-10 Fujikura Rubber Works, Ltd. Base fabrics for polyurethane-coated fabrics, polyurethane-coated fabrics and processes for their production
US4401945A (en) 1981-04-30 1983-08-30 The Valeron Corporation Apparatus for detecting the position of a probe relative to a workpiece
US4426619A (en) 1981-06-03 1984-01-17 Temptronic Corporation Electrical testing system including plastic window test chamber and method of using same
US4566184A (en) 1981-08-24 1986-01-28 Rockwell International Corporation Process for making a probe for high speed integrated circuits
US4419626A (en) 1981-08-25 1983-12-06 Daymarc Corporation Broad band contactor assembly for testing integrated circuit devices
US4453142A (en) 1981-11-02 1984-06-05 Motorola Inc. Microstrip to waveguide transition
US4480223A (en) 1981-11-25 1984-10-30 Seiichiro Aigo Unitary probe assembly
US4468629A (en) 1982-05-27 1984-08-28 Trw Inc. NPN Operational amplifier
US4528504A (en) 1982-05-27 1985-07-09 Harris Corporation Pulsed linear integrated circuit tester
US4491173A (en) 1982-05-28 1985-01-01 Temptronic Corporation Rotatable inspection table
JPS58210631A (en) 1982-05-31 1983-12-07 Toshiba Corp Ic tester utilizing electron beam
US4507602A (en) 1982-08-13 1985-03-26 The United States Of America As Represented By The Secretary Of The Air Force Measurement of permittivity and permeability of microwave materials
US4487996A (en) 1982-12-02 1984-12-11 Electric Power Research Institute, Inc. Shielded electrical cable
US4575676A (en) 1983-04-04 1986-03-11 Advanced Research And Applications Corporation Method and apparatus for radiation testing of electron devices
CH668646A5 (en) 1983-05-31 1989-01-13 Contraves Ag DEVICE FOR RECOVERING LIQUID VOLUME.
JPS59226167A (en) 1983-06-04 1984-12-19 Dainippon Screen Mfg Co Ltd Surface treating device for circuit board
FR2547945B1 (en) 1983-06-21 1986-05-02 Raffinage Cie Francaise NEW STRUCTURE OF ELECTRIC CABLE AND ITS APPLICATIONS
US4588970A (en) 1984-01-09 1986-05-13 Hewlett-Packard Company Three section termination for an R.F. triaxial directional bridge
JPS60136006U (en) 1984-02-20 1985-09-10 株式会社　潤工社 flat cable
US4557599A (en) 1984-03-06 1985-12-10 General Signal Corporation Calibration and alignment target plate
US4646005A (en) 1984-03-16 1987-02-24 Motorola, Inc. Signal probe
US4722846A (en) * 1984-04-18 1988-02-02 Kikkoman Corporation Novel variant and process for producing light colored soy sauce using such variant
JPS60235304A (en) 1984-05-08 1985-11-22 株式会社フジクラ Dc power cable
US4675600A (en) 1984-05-17 1987-06-23 Geo International Corporation Testing apparatus for plated through-holes on printed circuit boards, and probe therefor
DE3428087A1 (en) 1984-07-30 1986-01-30 Kraftwerk Union AG, 4330 Mülheim CONCENTRIC THREE-WIRE CABLE
US4665360A (en) 1985-03-11 1987-05-12 Eaton Corporation Docking apparatus
DE3531893A1 (en) * 1985-09-06 1987-03-19 Siemens Ag METHOD FOR DETERMINING THE DISTRIBUTION OF DIELECTRICITY CONSTANTS IN AN EXAMINATION BODY, AND MEASURING ARRANGEMENT FOR IMPLEMENTING THE METHOD
JPH0326643Y2 (en) * 1985-09-30 1991-06-10
DE3625631A1 (en) * 1986-07-29 1988-02-04 Gore W L & Co Gmbh ELECTROMAGNETIC SHIELDING
JP2609232B2 (en) * 1986-09-04 1997-05-14 日本ヒューレット・パッカード株式会社 Floating drive circuit
US4904933A (en) * 1986-09-08 1990-02-27 Tektronix, Inc. Integrated circuit probe station
US4673839A (en) 1986-09-08 1987-06-16 Tektronix, Inc. Piezoelectric pressure sensing apparatus for integrated circuit testing stations
US5082627A (en) * 1987-05-01 1992-01-21 Biotronic Systems Corporation Three dimensional binding site array for interfering with an electrical field
US4894612A (en) * 1987-08-13 1990-01-16 Hypres, Incorporated Soft probe for providing high speed on-wafer connections to a circuit
US5084671A (en) * 1987-09-02 1992-01-28 Tokyo Electron Limited Electric probing-test machine having a cooling system
JP2554669Y2 (en) * 1987-11-10 1997-11-17 博 寺町 Rotary positioning device
US4859989A (en) * 1987-12-01 1989-08-22 W. L. Gore & Associates, Inc. Security system and signal carrying member thereof
US4896109A (en) * 1987-12-07 1990-01-23 The United States Of America As Represented By The Department Of Energy Photoconductive circuit element reflectometer
US4891584A (en) * 1988-03-21 1990-01-02 Semitest, Inc. Apparatus for making surface photovoltage measurements of a semiconductor
US5091691A (en) * 1988-03-21 1992-02-25 Semitest, Inc. Apparatus for making surface photovoltage measurements of a semiconductor
US4893914A (en) * 1988-10-12 1990-01-16 The Micromanipulator Company, Inc. Test station
US4904935A (en) * 1988-11-14 1990-02-27 Eaton Corporation Electrical circuit board text fixture having movable platens
US4982153A (en) * 1989-02-06 1991-01-01 Cray Research, Inc. Method and apparatus for cooling an integrated circuit chip during testing
US5089774A (en) * 1989-12-26 1992-02-18 Sharp Kabushiki Kaisha Apparatus and a method for checking a semiconductor
JPH03209737A (en) * 1990-01-11 1991-09-12 Tokyo Electron Ltd Probe equipment
US4994737A (en) * 1990-03-09 1991-02-19 Cascade Microtech, Inc. System for facilitating planar probe measurements of high-speed interconnect structures
US5061823A (en) * 1990-07-13 1991-10-29 W. L. Gore & Associates, Inc. Crush-resistant coaxial transmission line
US5187443A (en) * 1990-07-24 1993-02-16 Bereskin Alexander B Microwave test fixtures for determining the dielectric properties of a material
US5091732A (en) * 1990-09-07 1992-02-25 The United States Of America As Represented By The Secretary Of The Navy Lightweight deployable antenna system
EP0493089B1 (en) * 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Wafer heating apparatus and method for producing the same
US5107076A (en) * 1991-01-08 1992-04-21 W. L. Gore & Associates, Inc. Easy strip composite dielectric coaxial signal cable
JPH05136218A (en) * 1991-02-19 1993-06-01 Tokyo Electron Yamanashi Kk Inspection device
DE4109908C2 (en) 1991-03-26 1994-05-05 Erich Reitinger Arrangement for testing semiconductor wafers
US5214243A (en) * 1991-10-11 1993-05-25 Endevco Corporation High-temperature, low-noise coaxial cable assembly with high strength reinforcement braid
US5210377A (en) * 1992-01-29 1993-05-11 W. L. Gore & Associates, Inc. Coaxial electric signal cable having a composite porous insulation
TW212252B (en) * 1992-05-01 1993-09-01 Martin Marietta Corp
US5345170A (en) * 1992-06-11 1994-09-06 Cascade Microtech, Inc. Wafer probe station having integrated guarding, Kelvin connection and shielding systems
FR2695508B1 (en) * 1992-09-08 1994-10-21 Filotex Sa Low noise cable.
US5382898A (en) * 1992-09-21 1995-01-17 Cerprobe Corporation High density probe card for testing electrical circuits
US5684669A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
US5448172A (en) * 1993-05-05 1995-09-05 Auburn International, Inc. Triboelectric instrument with DC drift compensation
JPH0714898A (en) * 1993-06-23 1995-01-17 Mitsubishi Electric Corp Equipment and method for testing and analyzing semiconductor wafer
JP3346838B2 (en) * 1993-06-29 2002-11-18 有限会社創造庵 Rotary movement mechanism
US5412866A (en) * 1993-07-01 1995-05-09 Hughes Aircraft Company Method of making a cast elastomer/membrane test probe assembly
JP3442822B2 (en) * 1993-07-28 2003-09-02 アジレント・テクノロジー株式会社 Measurement cable and measurement system
US5594358A (en) * 1993-09-02 1997-01-14 Matsushita Electric Industrial Co., Ltd. Radio frequency probe and probe card including a signal needle and grounding needle coupled to a microstrip transmission line
US20020011859A1 (en) * 1993-12-23 2002-01-31 Kenneth R. Smith Method for forming conductive bumps for the purpose of contrructing a fine pitch test device
US5486975A (en) * 1994-01-31 1996-01-23 Applied Materials, Inc. Corrosion resistant electrostatic chuck
US5477011A (en) * 1994-03-03 1995-12-19 W. L. Gore & Associates, Inc. Low noise signal transmission cable
US5715819A (en) * 1994-05-26 1998-02-10 The Carolinas Heart Institute Microwave tomographic spectroscopy system and method
US5491426A (en) * 1994-06-30 1996-02-13 Vlsi Technology, Inc. Adaptable wafer probe assembly for testing ICs with different power/ground bond pad configurations
US5704355A (en) * 1994-07-01 1998-01-06 Bridges; Jack E. Non-invasive system for breast cancer detection
GB9417450D0 (en) * 1994-08-25 1994-10-19 Symmetricom Inc An antenna
US5488954A (en) * 1994-09-09 1996-02-06 Georgia Tech Research Corp. Ultrasonic transducer and method for using same
US5481196A (en) * 1994-11-08 1996-01-02 Nebraska Electronics, Inc. Process and apparatus for microwave diagnostics and therapy
US5561377A (en) * 1995-04-14 1996-10-01 Cascade Microtech, Inc. System for evaluating probing networks
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
KR0176434B1 (en) * 1995-10-27 1999-04-15 이대원 Vacuum chuck apparatus
US5712571A (en) * 1995-11-03 1998-01-27 Analog Devices, Inc. Apparatus and method for detecting defects arising as a result of integrated circuit processing
US6075376A (en) * 1997-12-01 2000-06-13 Schwindt; Randy J. Low-current probe card
US5729150A (en) * 1995-12-01 1998-03-17 Cascade Microtech, Inc. Low-current probe card with reduced triboelectric current generating cables
US5861743A (en) * 1995-12-21 1999-01-19 Genrad, Inc. Hybrid scanner for use in an improved MDA tester
JP2900877B2 (en) * 1996-03-22 1999-06-02 日本電気株式会社 Semiconductor device wiring current observation method, wiring system defect inspection method, and apparatus therefor
US6023209A (en) * 1996-07-05 2000-02-08 Endgate Corporation Coplanar microwave circuit having suppression of undesired modes
US6181149B1 (en) * 1996-09-26 2001-01-30 Delaware Capital Formation, Inc. Grid array package test contactor
US6184845B1 (en) * 1996-11-27 2001-02-06 Symmetricom, Inc. Dielectric-loaded antenna
US6019612A (en) * 1997-02-10 2000-02-01 Kabushiki Kaisha Nihon Micronics Electrical connecting apparatus for electrically connecting a device to be tested
US6002263A (en) * 1997-06-06 1999-12-14 Cascade Microtech, Inc. Probe station having inner and outer shielding
US6034533A (en) * 1997-06-10 2000-03-07 Tervo; Paul A. Low-current pogo probe card
US6029141A (en) * 1997-06-27 2000-02-22 Amazon.Com, Inc. Internet-based customer referral system
WO1999004273A1 (en) * 1997-07-15 1999-01-28 Wentworth Laboratories, Inc. Probe station with multiple adjustable probe supports
US6013586A (en) * 1997-10-09 2000-01-11 Dimension Polyant Sailcloth, Inc. Tent material product and method of making tent material product
US6287776B1 (en) * 1998-02-02 2001-09-11 Signature Bioscience, Inc. Method for detecting and classifying nucleic acid hybridization
US6181144B1 (en) * 1998-02-25 2001-01-30 Micron Technology, Inc. Semiconductor probe card having resistance measuring circuitry and method fabrication
US6181416B1 (en) * 1998-04-14 2001-01-30 Optometrix, Inc. Schlieren method for imaging semiconductor device properties
TW440699B (en) * 1998-06-09 2001-06-16 Advantest Corp Test apparatus for electronic parts
US6178091B1 (en) * 1998-07-09 2001-01-23 Dell Usa, L.P. Computer system having surface mount PWB grounding clips
US6175228B1 (en) * 1998-10-30 2001-01-16 Agilent Technologies Electronic probe for measuring high impedance tri-state logic circuits
US6169410B1 (en) * 1998-11-09 2001-01-02 Anritsu Company Wafer probe with built in RF frequency conversion module
AU5586000A (en) * 1999-02-22 2000-09-14 Paul Bryant Programmable active microwave ultrafine resonance spectrometer (pamurs) method and systems
US6400166B2 (en) * 1999-04-15 2002-06-04 International Business Machines Corporation Micro probe and method of fabricating same
US6445202B1 (en) * 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6340895B1 (en) * 1999-07-14 2002-01-22 Aehr Test Systems, Inc. Wafer-level burn-in and test cartridge
US6379130B1 (en) * 2000-06-09 2002-04-30 Tecumseh Products Company Motor cover retention
JP2002022775A (en) * 2000-07-05 2002-01-23 Ando Electric Co Ltd Electro-optical probe and magneto-optical probe
JP2002039091A (en) * 2000-07-21 2002-02-06 Minebea Co Ltd Blower
US6512482B1 (en) * 2001-03-20 2003-01-28 Xilinx, Inc. Method and apparatus using a semiconductor die integrated antenna structure
JP4029603B2 (en) * 2001-05-31 2008-01-09 豊田合成株式会社 Weather strip
CA2353024C (en) * 2001-07-12 2005-12-06 Ibm Canada Limited-Ibm Canada Limitee Anti-vibration and anti-tilt microscope stand
US7343185B2 (en) * 2002-06-21 2008-03-11 Nir Diagnostics Inc. Measurement of body compounds
US6992495B2 (en) * 2002-06-28 2006-01-31 Celadon Systems, Inc. Shielded probe apparatus for probing semiconductor wafer
US6847219B1 (en) * 2002-11-08 2005-01-25 Cascade Microtech, Inc. Probe station with low noise characteristics
US6838885B2 (en) * 2003-03-05 2005-01-04 Murata Manufacturing Co., Ltd. Method of correcting measurement error and electronic component characteristic measurement apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2812502A (en) * 1953-07-07 1957-11-05 Bell Telephone Labor Inc Transposed coaxial conductor system
US4365109A (en) * 1980-01-25 1982-12-21 The United States Of America As Represented By The Secretary Of The Air Force Coaxial cable design
US4479690A (en) * 1982-09-13 1984-10-30 The United States Of America As Represented By The Secretary Of The Navy Underwater splice for submarine coaxial cable
US6284971B1 (en) * 1998-11-25 2001-09-04 Johns Hopkins University School Of Medicine Enhanced safety coaxial cables

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1559116A2 *

Also Published As

Publication number Publication date
US20080054922A1 (en) 2008-03-06
KR20050074568A (en) 2005-07-18
US7550984B2 (en) 2009-06-23
WO2004044949A3 (en) 2004-10-14
EP1559116A2 (en) 2005-08-03
KR100753945B1 (en) 2007-08-31
AU2003291650A1 (en) 2004-06-03
US6847219B1 (en) 2005-01-25
US7295025B2 (en) 2007-11-13
EP1559116A4 (en) 2007-05-02
AU2003291650A8 (en) 2004-06-03
US20070018665A1 (en) 2007-01-25
US20050104610A1 (en) 2005-05-19
US7138810B2 (en) 2006-11-21
JP2006505961A (en) 2006-02-16

Similar Documents

Publication Publication Date Title
US6847219B1 (en) Probe station with low noise characteristics
US6995579B2 (en) Low-current probe card
JP4624262B2 (en) Probe station with low inductance path
JP3974257B2 (en) Low current measurement system
JP4195124B2 (en) Probing method for probe station and test apparatus
US7468609B2 (en) Switched suspended conductor and connection
US6075376A (en) Low-current probe card
US7173440B2 (en) Probing apparatus and test method including electrical shielding

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2003768538

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020057008246

Country of ref document: KR

Ref document number: 2005507057

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 1020057008246

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003768538

Country of ref document: EP