WO2004046023A3 - Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission - Google Patents

Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission Download PDF

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Publication number
WO2004046023A3
WO2004046023A3 PCT/US2003/037188 US0337188W WO2004046023A3 WO 2004046023 A3 WO2004046023 A3 WO 2004046023A3 US 0337188 W US0337188 W US 0337188W WO 2004046023 A3 WO2004046023 A3 WO 2004046023A3
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WO
WIPO (PCT)
Prior art keywords
nanoparticle
fabrication
application
film coated
emitting film
Prior art date
Application number
PCT/US2003/037188
Other languages
French (fr)
Other versions
WO2004046023A2 (en
Inventor
Andrew R Barron
Dennis J Flood
John Ryan Loscutova
Original Assignee
Univ Rice William M
Andrew R Barron
Dennis J Flood
John Ryan Loscutova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Rice William M, Andrew R Barron, Dennis J Flood, John Ryan Loscutova filed Critical Univ Rice William M
Priority to US10/534,452 priority Critical patent/US7253014B2/en
Priority to AU2003295721A priority patent/AU2003295721A1/en
Priority to EP03786924A priority patent/EP1563530A4/en
Publication of WO2004046023A2 publication Critical patent/WO2004046023A2/en
Publication of WO2004046023A3 publication Critical patent/WO2004046023A3/en
Priority to US11/834,471 priority patent/US7682527B2/en
Priority to US12/708,225 priority patent/US8361349B2/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/156—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/735—Carbon buckyball
    • Y10S977/737—Carbon buckyball having a modified surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A nanoparticle coated with a semiconducting material and a method for making the same. In one embodiment, the method comprises making a semiconductor coated nanoparticle comprising a layer of at least one semiconducting material covering at least a portion of at least one surface of a nanoparticle, comprising: (A) dispersing the nanoparticle under suitable conditions to provide a dispersed nanoparticle; and (B) depositing at least one semiconducting material under suitable conditions onto at least one surface of the dispersed nanoparticle to produce the semiconductor coated nanoparticle. In other embodiments, the nanoparticle comprises a fullerene. Further embodiments include the semiconducting material comprising CdS or CdSe.
PCT/US2003/037188 2002-11-19 2003-11-19 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission WO2004046023A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/534,452 US7253014B2 (en) 2002-11-19 2003-11-19 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
AU2003295721A AU2003295721A1 (en) 2002-11-19 2003-11-19 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
EP03786924A EP1563530A4 (en) 2002-11-19 2003-11-19 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
US11/834,471 US7682527B2 (en) 2002-11-19 2007-08-06 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
US12/708,225 US8361349B2 (en) 2002-11-19 2010-02-18 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42753302P 2002-11-19 2002-11-19
US60/427,533 2002-11-19

Related Child Applications (2)

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US10534452 A-371-Of-International 2003-11-19
US11/834,471 Continuation US7682527B2 (en) 2002-11-19 2007-08-06 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

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WO2004046023A2 WO2004046023A2 (en) 2004-06-03
WO2004046023A3 true WO2004046023A3 (en) 2005-03-10

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US (3) US7253014B2 (en)
EP (1) EP1563530A4 (en)
AU (1) AU2003295721A1 (en)
WO (1) WO2004046023A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8062702B2 (en) * 2001-11-20 2011-11-22 William Marsh Rice University Coated fullerenes, composites and dielectrics made therefrom
US8294025B2 (en) * 2002-06-08 2012-10-23 Solarity, Llc Lateral collection photovoltaics
US7692218B2 (en) 2002-11-19 2010-04-06 William Marsh Rice University Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system
WO2004046023A2 (en) 2002-11-19 2004-06-03 William Marsh Rice University Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
US7078276B1 (en) * 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
US7476599B2 (en) * 2004-06-22 2009-01-13 Changchun Institute Of Applied Chemistry Two-phase thermal method for preparation of cadmium sulfide quantum dots
US7541509B2 (en) * 2004-08-31 2009-06-02 University Of Florida Research Foundation, Inc. Photocatalytic nanocomposites and applications thereof
US7491376B2 (en) * 2006-06-12 2009-02-17 Newcyte, Inc. Chemical derivatization of silica coated fullerenes and use of derivatized silica coated fullerenes
US20080274352A1 (en) * 2007-05-04 2008-11-06 3M Innovative Properties Company Optical film comprising antistatic primer and antistatic compositions
US7999176B2 (en) 2007-05-08 2011-08-16 Vanguard Solar, Inc. Nanostructured solar cells
US8431818B2 (en) * 2007-05-08 2013-04-30 Vanguard Solar, Inc. Solar cells and photodetectors with semiconducting nanostructures
US8433417B2 (en) * 2007-05-10 2013-04-30 Newcyte, Inc. Carbon nanostructure artificial retinal implant
US20110023955A1 (en) * 2007-06-26 2011-02-03 Fonash Stephen J Lateral collection photovoltaics
US20100196246A1 (en) * 2007-10-09 2010-08-05 Headwaters Technology Innovation, Llc Methods for mitigating agglomeration of carbon nanospheres using a crystallizing dispersant
GB0806715D0 (en) * 2008-04-14 2008-05-14 Trackdale Ltd Semiconductor nanocrystals
US20110220191A1 (en) * 2008-09-09 2011-09-15 Vanguard Solar, Inc. Solar cells and photodetectors with semiconducting nanostructures
US20100240900A1 (en) * 2009-03-23 2010-09-23 Headwaters Technology Innovation, Llc Dispersible carbon nanospheres and methods for making same
CA2766946C (en) 2010-02-02 2013-04-02 Ventana Medical Systems, Inc. Composition and method for stabilizing fluorescent particles
KR102605466B1 (en) * 2017-03-14 2023-11-22 매직 립, 인코포레이티드 Waveguides with light absorbing films and processes for forming the same
US10443237B2 (en) 2017-04-20 2019-10-15 Samuel J. Lanahan Truncated icosahedra assemblies

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6277766B1 (en) * 2000-02-03 2001-08-21 Michael Raymond Ayers Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices
US6348295B1 (en) * 1999-03-26 2002-02-19 Massachusetts Institute Of Technology Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging
US20030034486A1 (en) * 2001-07-02 2003-02-20 Korgel Brian A. Applications of light-emitting nanoparticles
US6685986B2 (en) * 1997-03-12 2004-02-03 William Marsh Rice University Metal nanoshells
US6710366B1 (en) * 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US20040108298A1 (en) * 2002-07-03 2004-06-10 Applied Nanotechnologies, Inc. Fabrication and activation processes for nanostructure composite field emission cathodes

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US545880A (en) * 1895-09-10 Cotton chopper and cultivator
US4845056A (en) * 1987-10-09 1989-07-04 Allied-Signal Inc. Continuous process for production of fine particulate ceramics
JPH0732877B2 (en) * 1990-07-10 1995-04-12 工業技術院長 Immobilized metal complex
US5274018A (en) * 1991-05-24 1993-12-28 Massachusetts Institute Of Technology Salt tolerant super absorbents
US5223479A (en) * 1991-08-01 1993-06-29 The Trustees Of The University Of Pennsylvania Process for preparing alkali metal-doped fullerenes
US5177248A (en) * 1991-10-28 1993-01-05 Exxon Research And Engineering Company Process of forming polysubstituted fullerenes
JP2687794B2 (en) * 1991-10-31 1997-12-08 日本電気株式会社 Graphite fiber with cylindrical structure
US5331183A (en) 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
US5308661A (en) * 1993-03-03 1994-05-03 The Regents Of The University Of California Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate
US5397350A (en) * 1993-05-03 1995-03-14 Chow; Alan Y. Independent photoelectric artificial retina device and method of using same
US5424054A (en) * 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US5420081A (en) * 1994-03-31 1995-05-30 The Regents Of The University Of California Office Of Technology Transfer Preparation of fullerene/glass composites
US6203814B1 (en) * 1994-12-08 2001-03-20 Hyperion Catalysis International, Inc. Method of making functionalized nanotubes
EP0745974B1 (en) * 1995-05-29 2002-08-14 Fuji Photo Film Co., Ltd. Method for forming silica protective films
JP2953996B2 (en) 1995-05-31 1999-09-27 日本電気株式会社 Metal-coated carbon nanotube and method for producing the same
US5690807A (en) * 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
JPH0967387A (en) * 1995-08-31 1997-03-11 Power Reactor & Nuclear Fuel Dev Corp Fullerene compound encapsulating metal therein and its production
JPH09115334A (en) * 1995-10-23 1997-05-02 Mitsubishi Materiais Corp Transparent conductive film and composition for film formation
US5744399A (en) * 1995-11-13 1998-04-28 Lsi Logic Corporation Process for forming low dielectric constant layers using fullerenes
US5648128A (en) * 1996-06-06 1997-07-15 National Science Council Method for enhancing the growth rate of a silicon dioxide layer grown by liquid phase deposition
JP2000516708A (en) * 1996-08-08 2000-12-12 ウィリアム・マーシュ・ライス・ユニバーシティ Macroscopically operable nanoscale devices fabricated from nanotube assemblies
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
US6106609A (en) * 1997-04-08 2000-08-22 The United States Of America As Represented By The Secretary Of The Navy Formation of nanocrystalline semiconductor particles within a bicontinuous cubic phase
AUPP004497A0 (en) * 1997-10-28 1997-11-20 University Of Melbourne, The Stabilized particles
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
KR20010074667A (en) * 1998-06-19 2001-08-08 추후보정 Free-standing and aligned carbon nanotubes and synthesis thereof
US6835366B1 (en) * 1998-09-18 2004-12-28 William Marsh Rice University Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof, and use of derivatized nanotubes
EP1112224B1 (en) * 1998-09-18 2009-08-19 William Marsh Rice University Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof; and use of derivatized nanotubes
DE19905694A1 (en) * 1998-11-27 2000-08-17 Forschungszentrum Juelich Gmbh Component
WO2000051186A1 (en) 1999-02-22 2000-08-31 Clawson Joseph E Jr Nanostructure device and apparatus
US6080683A (en) * 1999-03-22 2000-06-27 Special Materials Research And Technology, Inc. Room temperature wet chemical growth process of SiO based oxides on silicon
US6333598B1 (en) * 2000-01-07 2001-12-25 The United States Of America As Represented By The Secretary Of The Navy Low gate current field emitter cell and array with vertical thin-film-edge emitter
DE10006964C2 (en) * 2000-02-16 2002-01-31 Infineon Technologies Ag Electronic component with a conductive connection between two conductive layers and method for producing an electronic component
KR100615103B1 (en) * 2000-02-16 2006-08-25 풀러린 인터내셔날 코포레이션 Nanotubes, field emission cathode and cathode ray tube having nanotubes and method for forming them
US6346136B1 (en) * 2000-03-31 2002-02-12 Ping Chen Process for forming metal nanoparticles and fibers
DE10036897C1 (en) * 2000-07-28 2002-01-03 Infineon Technologies Ag Field effect transistor used in a switching arrangement comprises a gate region between a source region and a drain region
CA2430888C (en) * 2000-12-11 2013-10-22 President And Fellows Of Harvard College Nanosensors
KR20020049630A (en) 2000-12-19 2002-06-26 임지순 field emitter
JP4848585B2 (en) * 2000-12-25 2011-12-28 ソニー株式会社 Fullerene derivative production method, fullerene derivative, proton conductor, and electrochemical device
US6992322B2 (en) * 2001-01-02 2006-01-31 Kavassery Sureswaran Narayan Photo-responsive organic field effect transistor
US20020094699A1 (en) * 2001-01-12 2002-07-18 Mau-Phon Houng Method for producing a metal oxide semiconductor field effect transistor
JP2002244577A (en) 2001-02-16 2002-08-30 Seiko Epson Corp Flexible substrate, electrooptical device and electronic appliance
JP3731486B2 (en) * 2001-03-16 2006-01-05 富士ゼロックス株式会社 Transistor
EP1246205A1 (en) 2001-03-26 2002-10-02 Abb Research Ltd. Electrically conducting nanocomposite material
GB0110580D0 (en) * 2001-04-30 2001-06-20 Univ Sussex Nanotubes
AU2002334784A1 (en) 2001-10-01 2003-04-14 Tda Research, Inc. Derivatization and solubilization of insoluble classes of fullerenes
US8062702B2 (en) * 2001-11-20 2011-11-22 William Marsh Rice University Coated fullerenes, composites and dielectrics made therefrom
AU2003202227A1 (en) * 2002-01-08 2003-07-24 Photon-X, Inc. Optical waveguide amplifiers
US20030134433A1 (en) * 2002-01-16 2003-07-17 Nanomix, Inc. Electronic sensing of chemical and biological agents using functionalized nanostructures
US6894359B2 (en) * 2002-09-04 2005-05-17 Nanomix, Inc. Sensitivity control for nanotube sensors
AU2003253590A1 (en) 2002-03-29 2003-11-10 Board Of Regents For The Oklahoma Agricultural And Mechanical Colleges, Acting For And On Behalf Of Oklahoma State University Implantable biosensor from stratified nanostructured membranes
US6970239B2 (en) * 2002-06-12 2005-11-29 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
US6852920B2 (en) * 2002-06-22 2005-02-08 Nanosolar, Inc. Nano-architected/assembled solar electricity cell
US7291782B2 (en) 2002-06-22 2007-11-06 Nanosolar, Inc. Optoelectronic device and fabrication method
US6946597B2 (en) 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
US6755530B1 (en) * 2002-07-16 2004-06-29 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Retinal light processing using carbon nanotubes
TWI220269B (en) * 2002-07-31 2004-08-11 Ind Tech Res Inst Method for fabricating n-type carbon nanotube device
EP1540741B1 (en) * 2002-09-05 2014-10-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7692218B2 (en) * 2002-11-19 2010-04-06 William Marsh Rice University Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system
WO2004046023A2 (en) 2002-11-19 2004-06-03 William Marsh Rice University Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
US6969897B2 (en) * 2002-12-10 2005-11-29 Kim Ii John Optoelectronic devices employing fibers for light collection and emission
US7163967B2 (en) * 2003-12-01 2007-01-16 Cryovac, Inc. Method of increasing the gas transmission rate of a film
US7253431B2 (en) * 2004-03-02 2007-08-07 International Business Machines Corporation Method and apparatus for solution processed doping of carbon nanotube
KR100624433B1 (en) 2004-08-13 2006-09-19 삼성전자주식회사 P type Semiconductor Carbon Nanotube and Method of Manufacturing the Same
US20060036045A1 (en) 2004-08-16 2006-02-16 The Regents Of The University Of California Shape memory polymers
TWI251354B (en) 2005-02-02 2006-03-11 Ind Tech Res Inst Solar energy power module with carbon nano-tube
JP4752283B2 (en) 2005-02-24 2011-08-17 富士ゼロックス株式会社 Solar cell using carbon nanotubes
US20070005116A1 (en) 2005-06-30 2007-01-04 Lsi Logic Corporation Implantable, fully integrated and high performance semiconductor device for retinal prostheses
US8195266B2 (en) 2005-09-29 2012-06-05 Doheny Eye Institute Microelectrode systems for neuro-stimulation and neuro-sensing and microchip packaging and related methods
KR100649743B1 (en) 2005-10-20 2006-11-27 삼성전기주식회사 Solar cells comprising cnt and its manufacturing method
US20090004471A1 (en) 2006-01-17 2009-01-01 Amthor Franklin R Electrode Arrays and Methods of Fabrication Thereof
US7491376B2 (en) 2006-06-12 2009-02-17 Newcyte, Inc. Chemical derivatization of silica coated fullerenes and use of derivatized silica coated fullerenes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6685986B2 (en) * 1997-03-12 2004-02-03 William Marsh Rice University Metal nanoshells
US6348295B1 (en) * 1999-03-26 2002-02-19 Massachusetts Institute Of Technology Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging
US6277766B1 (en) * 2000-02-03 2001-08-21 Michael Raymond Ayers Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices
US20030034486A1 (en) * 2001-07-02 2003-02-20 Korgel Brian A. Applications of light-emitting nanoparticles
US6710366B1 (en) * 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US20040108298A1 (en) * 2002-07-03 2004-06-10 Applied Nanotechnologies, Inc. Fabrication and activation processes for nanostructure composite field emission cathodes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1563530A4 *

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US20080171204A1 (en) 2008-07-17
US7253014B2 (en) 2007-08-07
AU2003295721A8 (en) 2004-06-15
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