WO2004053951A1 - Procede d'exposition, appareil d'exposition et procede de fabrication du dispositif - Google Patents

Procede d'exposition, appareil d'exposition et procede de fabrication du dispositif Download PDF

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Publication number
WO2004053951A1
WO2004053951A1 PCT/JP2003/015408 JP0315408W WO2004053951A1 WO 2004053951 A1 WO2004053951 A1 WO 2004053951A1 JP 0315408 W JP0315408 W JP 0315408W WO 2004053951 A1 WO2004053951 A1 WO 2004053951A1
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WO
WIPO (PCT)
Prior art keywords
substrate
exposure
area
liquid
optical system
Prior art date
Application number
PCT/JP2003/015408
Other languages
English (en)
Japanese (ja)
Inventor
Nobutaka Magome
Masahiro Nei
Shigeru Hirukawa
Naoyuki Kobayashi
Soichi Owa
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU2003302831A priority Critical patent/AU2003302831A1/en
Publication of WO2004053951A1 publication Critical patent/WO2004053951A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Definitions

  • the present invention relates to an exposure method for exposing a pattern on a substrate via a projection optical system while the image plane side of the projection optical system is locally filled with a liquid, and a device manufacturing method using the exposure method.
  • Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.
  • An exposure apparatus used in the photolithographic process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and a pattern of the mask is projected while moving the mask stage and the substrate stage sequentially.
  • C In recent years, in order to cope with higher integration of device patterns, further improvement in the resolution of the projection optical system is desired.
  • the resolution of the projection optical system increases as the exposure wavelength used decreases and as the numerical aperture of the projection optical system increases. Therefore, the exposure wavelength used in the exposure apparatus is becoming shorter year by year, and the numerical aperture of the projection optical system is also increasing.
  • the current mainstream exposure wavelength is 248 nm for a KrF excimer laser, but a shorter wavelength of 193 nm for an ArF excimer laser is also being put into practical use.
  • the depth of focus (DOF) is as important as the resolution.
  • the resolution R and the depth of focus ⁇ 5 are respectively expressed by the following equations.
  • Equations (1) and (2) show that when the exposure wavelength ⁇ is shortened and the numerical aperture ⁇ ⁇ ⁇ ⁇ is increased to increase the resolution R, the depth of focus (5 becomes narrower). If the depth of focus (5 becomes too narrow), it becomes difficult to match the substrate surface to the image plane of the projection optical system, and there is a possibility that the margin during the exposure operation may be insufficient.
  • a method of shortening and increasing the depth of focus for example, International Publication No.
  • the liquid immersion method disclosed in Japanese Patent Application Laid-Open No. 9/495504 has been proposed.
  • this immersion method the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent, and the wavelength of the exposure light in the liquid is 1 / n (n is the refraction of the liquid) in air.
  • the resolution is improved by taking advantage of the fact that the ratio is usually about 1.2 to 1.6), and the depth of focus is increased by about n times.
  • the above-mentioned prior art has the following problems.
  • the space between the lower surface, which is the image plane side of the projection optical system, and the substrate (wafer) is locally filled with liquid.
  • the liquid When a short area near the center of the substrate is exposed, the liquid is exposed. No outflow to the outside of the substrate occurs. However, for example, as shown in the schematic diagram of FIG. 15, the peripheral area (edge area) E of the substrate P is moved to the projection area 100 of the projection optical system, and the edge area E of the substrate P is exposed. Then, the liquid flows out of the substrate P. Leaving the spilled liquid will cause fluctuations in the environment (humidity, etc.) in which the substrate P is placed, causing it to be placed on the optical path of an interferometer that measures the position information of the substrate stage that holds the substrate, and various optical devices. A change in the refractive index on the optical path of the detection light
  • An exposure method capable of preventing the liquid from flowing out of the substrate even when the substrate is subjected to liquid immersion exposure in a state where the liquid is filled between the projection optical system and the substrate, and a case in which the substrate is subjected to liquid immersion exposure Another object of the present invention is to provide an exposure method capable of transferring a pattern to an edge area of a substrate, a device manufacturing method using the exposure method, and an exposure apparatus for executing the exposure method.
  • a liquid (50) is supplied between the substrate (PL) and the substrate (P), a first area (AR1) on the substrate (P) is exposed through the liquid (50), and a first area (AR1) is exposed.
  • An exposure method is provided for exposing a second area (AR2) on a substrate (P) different from that of (2) without supplying a liquid (50).
  • the above-described exposure method is provided, wherein the exposure condition and the exposure condition for exposing the second area (AR2) are different.
  • the second region is exposed through the projection optical system without liquid,
  • the outflow of the liquid to the outside of the substrate can be suppressed.
  • the pattern can be transferred well to the second area. Therefore, fluctuations in the environment in which the substrate is placed are suppressed, and inconveniences such as the occurrence of contracts on mechanical parts around the substrate stage that supports the substrate are also suppressed.
  • CMP Chemical Mechanical Polishing
  • the numerical aperture of the projection optical system when exposing the second area is smaller than when exposing the first area. Further, it is preferable that the second region is exposed by the two-beam interference method. Further, it is preferable that an image of a line 'and' space pattern in which a line pattern is formed at a predetermined pitch is projected on the second area. W 200
  • the first pattern used for exposing the first area is different from the second pattern used for exposing the second area. Further, it is preferable that the first area is exposed while moving the first pattern and the substrate, and the second area is exposed while the second pattern and the substrate are stationary. The first region may be exposed while moving the first pattern and the substrate, and the second region may be exposed while moving the substrate while the second pattern is stationary. Further, in the exposure method of the present invention, it is preferable that the first pattern and the second pattern are formed on the same mask. The first pattern may be formed on a mask, and the second pattern may be formed on a mask stage holding the mask, and on a substrate fixed at a position separated from the mask.
  • a distance between the projection optical system and the substrate is different between when exposing the first region and when exposing the second region. Further, when exposing the first region and exposing the second region, the projection optical system is formed through the projection optical system so that the distance between the projection optical system and the substrate is substantially the same. The position of the image plane may be adjusted. Further, in the present invention, it is preferable that the exposure of the first region is performed after the exposure of the second region is completed.
  • a third aspect of the present invention there is provided a method of exposing a substrate (P) having a first region (AR 1) and a second region (AR 2) using a projection light ⁇ : system (PL).
  • An exposure method is provided in which only the area excluding the upper page (AR 2) is exposed.
  • the edge of the substrate it is not necessary to move the edge of the substrate to the liquid immersion area between the projection optical system and the substrate.
  • the process conditions do not perform the CMP process on the substrate P, the pattern may not be formed at the edge. And Therefore, since it is not necessary to expose the edge portion, it is not necessary to move the edge of the substrate to the liquid immersion area between the projection optical system and the substrate. Therefore, it is possible to prevent the liquid from flowing out of the substrate.
  • a device manufacturing method using the exposure method according to the above aspect there is provided a device manufacturing method using the exposure method according to the above aspect.
  • an exposure light is applied to a first area (AR1) on the substrate (P).
  • the first optical system (IL, PL) for irradiating (EL) and the second region (AR 2) on the substrate (P) different from the first region (AR 1) are irradiated with exposure light (EL 2)
  • An exposure apparatus (EX) including a second optical system (IL 2, PL 2) is provided. According to the present invention, it is possible to easily expose each of the first and second regions on the substrate under different conditions.
  • the first optical system and the second optical system it is possible to expose the first and second regions on the substrate in parallel with the first and second optical systems, so that throughput is increased. Can be improved.
  • the first and second optical systems may be constructed according to the target exposure accuracy (pattern formation accuracy) when exposing the first and second regions, for example, the exposure accuracy for the second region is relatively rough.
  • the second optical system can have a simple (low-priced) configuration, and the apparatus cost and running cost can be reduced.
  • the wavelength of the exposure light used for exposing the first area is different from the wavelength of the exposure light used for exposing the second area.
  • a first movable body that can move while holding the substrate having the first and second regions; and a second movable body that can move while holding the substrate having the first and second regions During exposure of a first region on the substrate held by the first movable body using the first optical system, a second region on the substrate held by the second movable body using the second optical system is exposed. Exposing an area, and after exposing the first area on the substrate held by the first movable body, using the first optical system, 2 It is preferable to start exposure of the first area on the substrate held by the movable body. Further, the second region may be around the edge of the substrate. Further, the second region may be exposed by a two-beam interference method.
  • the first region is exposed through a liquid between the first optical system and the substrate, and the second region is between the second optical system and the substrate. Exposure is preferably performed without a liquid.
  • a device manufacturing method using the exposure apparatus (EX) according to the fourth aspect there is provided an exposure apparatus for exposing a substrate,
  • a first station (A) including a liquid supply device (1), wherein a substrate is exposed through the liquid supplied by the liquid supply device;
  • immersion exposure is performed in a first station, and exposure without using a normal liquid is performed in a second station.
  • the substrate has first and second areas, and the first area has The first area may be exposed via the liquid and the second area may be exposed at the second station without the liquid. Therefore, by performing control according to exposure conditions separately at the two stations, complicated exposure control according to the application can be performed. In addition, the problem of liquid (water) treatment associated with immersion exposure is sufficient if concentrated processing is performed in one station.
  • the exposure apparatus may further include a first projection optical system provided in the first station, and a second projection optical system provided in the second station.
  • the exposure apparatus may include a first and second movable body, for example, a moving stage that alternately moves while holding the substrate between the first station and the second station.
  • a first and second movable body for example, a moving stage that alternately moves while holding the substrate between the first station and the second station.
  • the substrate is moved to the first stage by the first or second movable body, and the liquid is supplied to the first region and the first region is supplied. Is exposed.
  • substrate alignment measurement AF / AL measurement, alignment measurement, etc.
  • the substrate on which the in-place measurement has been performed is transferred to the first station.
  • the throughput of the twin stage can be improved by taking advantage of the immersion exposure.
  • FIG. 1 is a schematic configuration diagram showing one embodiment of an exposure apparatus used in the exposure method of the present invention.
  • FIG. 2 is a diagram showing the position of the tip of a projection optical system and a liquid supply device and a liquid recovery device. It is a figure which shows a relationship.
  • FIG. 3 is a diagram showing an example of the arrangement of the supply nozzle and the recovery nozzle.
  • FIG. 4 is a diagram showing an example of the arrangement of the supply nozzle and the recovery nozzle.
  • FIG. 5 is a plan view showing a mask according to the present invention.
  • FIG. 6 is a plan view showing a substrate according to the present invention.
  • FIGS. 7A and 7B are diagrams showing an example of the configuration of an optical system when exposing the second area.
  • FIG. 8 is a diagram showing an arrangement of a glass substrate on which a pattern for exposure of a second region is formed on a mask stage.
  • FIG. 9 is a diagram showing another configuration example of the optical system when exposing the second area.
  • FIG. 10 is a schematic configuration diagram showing another embodiment of the exposure apparatus of the present invention.
  • FIG. 11 is a view showing an example of a glass substrate on which a pattern for exposure in a second region is formed.
  • FIG. 12 is a view showing another example of the glass substrate on which the pattern for exposure in the second region is formed.
  • FIG. 13 is a schematic configuration diagram showing another embodiment of the exposure apparatus of the present invention.
  • FIG. 14 is a flowchart showing an example of a semiconductor device manufacturing process.
  • FIG. 15 is a diagram for explaining a conventional problem. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus used for the exposure method of the present invention.
  • an exposure apparatus EX includes a mask stage MST that supports a mask M, a substrate stage PST that supports a substrate P, and an illumination optical system IL that illuminates the mask M supported by the mask stage MST with exposure light EL. And a projection optical system PL that projects and exposes the image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P supported by the substrate stage PST, and a control device C that controls the overall operation of the exposure apparatus EX 0 NT and it is raining.
  • scanning is performed by exposing the pattern formed on the mask M to the substrate P while synchronously moving the mask M and the substrate P in different directions (opposite directions) in the scanning direction.
  • the direction that coincides with the optical axis AX of the projection optical system PL is the Z-axis direction
  • the synchronous movement direction (scanning direction) between the mask M and the substrate P in a plane perpendicular to the Z-axis direction is the X-axis direction
  • the direction perpendicular to the Z-axis direction and the Y-axis direction (non-scanning direction) is defined as the Y-axis direction.
  • the directions around the X axis, Y axis, and Z axis are 0 °, ⁇ ⁇ ⁇ , and the directions, respectively.
  • the “substrate” includes a semiconductor wafer coated with a resist
  • the “mask” includes a reticle on which a device pattern to be reduced and projected onto the substrate is formed.
  • the illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light E, and equalizes the illuminance of the exposure light source and the luminous flux emitted from the exposure light source. Exposure light from optical light gray evening
  • the exposure light EL emitted from the illumination optical system IL includes, for example, ultraviolet bright lines (g-line, h-line, i-line) emitted from a mercury lamp and KrF excimer laser light (wavelength: 248 nm).
  • the mask stage MST supports the mask M, and can be moved two-dimensionally in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane, and can be minutely rotated in the 0 Z direction.
  • the mask stage MST is driven by a mask stage driving device MSTD such as a linear motor.
  • the mask stage drive MS TD is controlled by the controller CONT.
  • the position and rotation angle of the mask M on the mask stage MST in the two-dimensional direction are measured in real time by a laser interferometer, and the measurement results are output to the controller C0NT.
  • the controller C 0 NT drives the mask stage driving device MS TD based on the measurement result of the laser interferometer to position the mask M supported by the mask stage MST.
  • the projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification / ?, and is composed of a plurality of optical elements (lenses).
  • the lens barrel is supported by PK.
  • the projection optical system PL is a reduction system whose projection magnification 3 is, for example, 1Z4 or 1/5.
  • the projection optical system PL may be either a unity magnification system or an enlargement system.
  • an optical element (lens) 60 is exposed from the lens barrel PK on the distal end side (substrate P side) of the projection optical system PL of the present embodiment.
  • the optical element 60 is provided detachably (replaceable) with respect to the lens barrel PK.
  • the substrate stage PST supports the substrate P, and the substrate P
  • the XY stage 52 supports the Z stage 51
  • the XY stage 52 supports the Z stage 51
  • the base 53 supports the XY stage 52.
  • the substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor.
  • the substrate stage drive PSTD is controlled by the controller CONT.
  • the Z stage 51 By driving the Z stage 51, the standing (focus position) in the Z-axis direction and the position in the 0X direction of the substrate P held on the Z stage 51 are controlled.
  • the XY stage 52 By driving the XY stage 52, the position of the substrate P in the XY direction (the position in a direction substantially parallel to the image plane of the projection optical system PL) is controlled. That is, the Z stage 51 controls the force position and the tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system P by the autofocus method and the intelligent repelling method.
  • the XY stage 52 positions the substrate P in the X-axis direction and the Y-axis direction. It goes without saying that the Z stage and the XY stage may be provided integrally.
  • a movable mirror 54 is provided on the substrate stage PST (Z stage 51).
  • a laser interferometer 55 is provided at a position facing the movable mirror 54.
  • the position and the rotation angle of the substrate P on the substrate stage PST in the two-dimensional direction are measured in real time by the laser interferometer 55, and the measurement results are output to the control device CONT.
  • the controller C CNT positions the substrate P supported on the substrate stage PST by driving the substrate stage driving device PSTD based on the measurement result of the laser interferometer 55.
  • an immersion method is applied in order to substantially shorten the exposure wavelength to improve the resolution and substantially widen the depth of focus.
  • the predetermined liquid 50 is filled.
  • the lens 60 is exposed at the distal end side of the projection optical system PL; the 'night body 50 is configured to contact only the lens 60. This prevents corrosion of the lens barrel PK made of metal.
  • the liquid 50 is a projection optical system
  • the structure is such that the image plane side of the PL is locally filled. That is, the liquid immersion part between the projection optical system PL and the substrate P is sufficiently smaller than the substrate P.
  • pure water is used as the liquid 50.
  • the exposure apparatus EX includes a liquid supply device 1 that supplies a predetermined liquid 50 to a space 56 between the front end surface (the front end surface of the lens 60) 7 of the projection optical system PL and the substrate P; And a liquid recovery device 2 for recovering the liquid 50.
  • the liquid supply device 1 is used to locally fill the image plane side of the projection optical system PL with the liquid 50, and supplies the liquid 50 to the ink tank, the pressure pump, and the space 56.
  • a temperature adjusting device for adjusting the temperature of the liquid 50 is provided.
  • One end of a supply pipe 3 is connected to the liquid supply device 1, and a supply nozzle 4 is connected to the other end of the supply pipe 3.
  • the liquid supply device 1 supplies the liquid 50 to the space 56 via the supply pipe 3 and the supply nozzle 4.
  • the liquid recovery device 2 includes a suction pump, a tank for storing the recovered liquid 50, and the like.
  • One end of a recovery pipe 6 is connected to the liquid recovery device 2, and a recovery nozzle 5 is connected to the other end of the recovery pipe 6.
  • the liquid recovery device 2 recovers the liquid 50 in the space 56 through the recovery nozzle 5 and the recovery pipe 6.
  • controller CONT drives liquid supply device 1 and supplies a predetermined amount of liquid 50 per unit time to space 56 via supply pipe 3 and supply nozzle 4.
  • the liquid recovery device 2 is driven to recover a predetermined amount of liquid 50 per unit time from the space 56 via the recovery nozzle 5 and the recovery pipe 6.
  • the liquid 50 is disposed in the space 56 between the front end surface 7 of the projection optical system PL and the substrate P, and a liquid immersion part is formed.
  • the control device CONT can arbitrarily set the liquid supply amount per unit time to the space 56 by controlling the liquid supply device 1 and control the liquid recovery device 2 from above the substrate P.
  • FIG. 2 is a front view showing a lower portion of the projection optical system PL of the exposure apparatus EX, a liquid supply device 1, a liquid recovery device 2, and the like.
  • the lens 60 at the lowermost end of the projection optical system PL is formed in a rectangular shape elongated in the Y-axis direction (non-scanning direction) except for a portion where the tip 6OA is required in the scanning direction.
  • a partial pattern image of the mask M is projected on a rectangular projection area immediately below the tip 6 OA, and the mask M is moved in the ⁇ X direction (or + X direction) with respect to the projection optical system PL.
  • the substrate P moves in the + X direction (or one X direction) at a speed of 3 ⁇ V (3 is a projection magnification) via the XY stage 52. Then, after the exposure to one shot area is completed, the next shot area is moved to the scanning start position by the stepping of the substrate P. Thereafter, the exposure processing for each shot area is sequentially performed by the step-and-scan method. Done.
  • the liquid 50 is set to flow in the same direction as the movement direction of the substrate P along the movement direction of the substrate P.
  • the Z stage 51 is provided with a suction hole 24 for holding the substrate P by suction.
  • Each of the suction holes 24 is connected to a flow path 25 formed inside the Z stage 51.
  • the flow path 25 connected to the suction hole 24 is connected to one end of a pipe 30 provided outside the Z stage 51.
  • the other end of the conduit 30 is connected to a pump 33 as a suction device via a tank 31 and a valve 32 provided outside the Z stage 51.
  • the tank 31 is provided with a discharge channel 31A, and when a predetermined amount of liquid is accumulated, the liquid is discharged from the discharge channel 31A. During the immersion exposure, the liquid 50 flowing out of the substrate P may reach the back side of the substrate P.
  • the liquid 50 that has entered the rear surface side of the substrate P may flow into the suction holes 24 for holding the substrate P by suction.
  • the suction hole 24 is connected to a pump 33 as a suction device via a flow path 25, a pipe 30, and a tank 31, and a valve is provided for sucking and holding the substrate P. Since the opening of 32 and the driving of the pump 33 are performed, the liquid 50 flowing into the adsorption hole 24 can be collected in the tank 31 via the flow path 25 and the pipe 30.
  • Fig. 3 shows the liquid crystal 50 in the X-axis direction with the tip 6 OA of the lens 60 of the projection optical system PL.
  • the tip 6OA of the lens 60 has a rectangular shape elongated in the Y-axis direction, so that the tip 60A of the lens 60 of the projection optical system PL is located in the + X direction so as to sandwich the tip 60A in the X-axis direction.
  • the tip 60A of the lens 60 of the projection optical system PL is located in the + X direction so as to sandwich the tip 60A in the X-axis direction.
  • the supply nozzles 4A to 4C are connected to the liquid supply device 1 via the supply pipe 3, and the recovery nozzles 5A and 5B are connected to the liquid recovery device 2 via the recovery pipe 4. Also, the supply nozzles 8A to 8C and the collection nozzles 9A and 9B are located at positions where the supply nozzles 4A to 4C and the collection nozzles 5A and 5B are rotated by approximately 180 ° with respect to the center of the tip 6OA. And are arranged.
  • the nozzle rows 4A to 4C, 9A and 9B and the nozzle rows 8A to 8C, 5A and 5B are arranged to face each other, and the distance between the supply nozzle and the recovery nozzle facing each other (for example, 4A Is larger than the width in the scanning direction of the projection area defined below the tip 60A of the lens 60, but smaller than the diameter of the substrate P. Therefore, when exposing the shot area near the outer periphery of the substrate P, the immersion area protrudes out of the edge of the substrate P, and the liquid is supplied to the opposite side so that the liquid does not leak outside the substrate P. It is desirable that the distance between the nozzle and the collection nozzle be as close as possible to the width of the projection area in the scanning direction.
  • the supply nozzles 4A to 4C and the collection nozzles 9A and 9B are alternately arranged in the Y-axis direction.
  • the supply nozzles 8A to 8C and the collection nozzles 5A and 5B are alternately arranged in the Y-axis direction.
  • supply nozzle 8 A ⁇ 8C are connected to the liquid supply apparatus 1 via the supply pipe 1
  • recovery nozzle 9A, 9 B are connected to the liquid recovery apparatus 2 via the recovery pipe 1 1.
  • the liquid is supplied from the nozzle so that no gas part is generated between the projection optical system PL and the substrate P.o As shown in Fig. 4, the liquid is supplied to both sides in the Y-axis Supply nozzles 13 and 14 and recovery nozzles 15 and 16 can also be provided.
  • the supply nozzle and the recovery nozzle stably supply the liquid 50 between the projection optical system PL and the substrate P even when the substrate P moves in the non-scanning direction (Y-axis direction) during the step movement. can do.
  • the shape of the nozzle described above is not particularly limited.
  • the supply or recovery of the liquid 50 may be performed with two pairs of nozzles on the long side of the tip 6 OA.
  • the supply nozzle and the recovery nozzle are arranged vertically. You may.
  • FIG. 5 is a plan view of the mask M according to the present embodiment. In FIG.
  • a mask M is composed of a first pattern formation area MA 1 in which device patterns (first patterns) 41 for forming devices are formed, and a line pattern in which line patterns are formed at a predetermined pitch. It has a second pattern forming area MA 2 in which a space pattern (second pattern) 42 is formed.
  • the device pattern 41 is transferred to a first area AR1 on the substrate P, which will be described later, and the line and space pattern (L / S pattern) 42 is the first area AR1 on the substrate P different from the first area AR1. It is now transcribed into two regions, AR2.
  • FIG. 6 is a plan view of the substrate P.
  • the device pattern 41 formed on the mask M is transferred to the first area AR1, which is the pattern formation area set near the center of the substantially circular substrate P, and the vicinity of the edge of the substrate P
  • the L / S pattern 42 formed on the mask M is transferred to the second region AR2 which is a region.
  • a plurality of shot areas SH are set in the first area AR1.
  • the boundary between the first area AR1 and the second area AR2 is not limited to that shown in Fig. 6, but is determined according to the acceleration distance and deceleration distance before and after scanning and exposing each shot area, or the range of the liquid immersion area. Just fine.
  • a procedure for exposing the pattern of the mask M to the substrate P using the above-described exposure apparatus EX will be described.
  • the control device C 0 NT drives the liquid supply device 1 and the liquid recovery device 2 to supply the liquid 50 and supply the liquid 50.
  • the controller CONT illuminates the first pattern formation region M1 of the mask M with the exposure light EL by the illumination optical system IL while moving the mask M and the substrate P synchronously. Is sequentially projected onto each shot area SH of the first area AR1 on the substrate P via the projection optical system PL and the liquid 50.
  • the controller CONT uses the L / S pattern 42 provided at a different position from the device pattern 41 of the mask M to expose the second area AR 2 of the substrate P to the mask stage MST and the substrate stage PST. Is driven to position the mask M and the substrate P at predetermined positions. Before or after this positioning operation, the control device CONT stops the supply and recovery operations of the liquid 50 by the liquid supply device 1 and the liquid recovery device.
  • the control device CONT prepares to expose the second area AR2 via the projection optical system PL without the liquid 50.
  • the control unit CONT determines the illumination condition (exposure condition) of the exposure light EL to the mask M when performing the exposure processing on the second area AR2, and the condition when performing the exposure processing on the first area AR1.
  • the aperture of the illumination optical system IL is changed, and the illumination condition for the mask M is changed from normal illumination to oblique incidence illumination (deformed illumination).
  • the control device CONT illuminates the L / S pattern 42 of the mask M obliquely with the exposure light EL, and uses two diffracted lights out of the plurality of diffracted lights diffracted by the L / S pattern 42 to the substrate P.
  • FIG. 7 is a diagram showing an example of an optical system when exposing the second area AR2.
  • a monopole illumination stop 71 having one opening at a position shifted from the optical axis is arranged downstream of the light path of the light source 70 of the illumination optical system IL.
  • the light beam emitted from the light source 70 passes through the opening of the monopole illumination stop 71, passes through the lens system 73, and is obliquely incident on the mask / S pattern 42 of the mask M.
  • the second area AR2 of the substrate P is exposed to the L / S pattern 42 by the two-beam interference method based on the 0th-order light and the + 1st-order light (1st-order light).
  • exposure can be performed using a dipole illumination stop 72 having two openings at positions shifted from the optical axis.
  • a quadrupole illumination stop having four apertures may be used.
  • the illumination condition may be changed not only by changing the aperture, but also by using a zoom optical system or a diffractive optical element. Exposure using the two-beam interference method increases the depth of focus.
  • the exposure condition based on the two-beam interference method is an exposure condition resistant to defocus
  • the second region AR2 on the substrate P is exposed under an exposure condition resistant to defocus.
  • the projection optical system PL of the exposure apparatus EX in the present embodiment is designed so as to obtain optimal imaging characteristics by passing through the liquid 50, so that, for example, the liquid does not pass under normal illumination (circular stop).
  • the exposure condition was changed to the exposure condition based on the two-light interference method, and the exposure condition was set to be resistant to defocus, so that the surface of the substrate P did not pass through the liquid. It can fit within the depth of focus of the projection optical system PL.
  • the first area AR1 is exposed under an exposure condition such as oblique incidence illumination that is resistant to defocusing.In such a case, simply change the exposure condition with liquid to the exposure condition without liquid.
  • the second area AR2 may be exposed.
  • the mask M (L / S pattern 42) and the substrate P are moved synchronously as in the exposure processing for the first area AR 1. Exposure may be performed, exposure may be performed with the mask M and the substrate P stationary, or exposure may be performed while moving the substrate P with the mask M stationary. For example, in FIG. 6, in the second area AR2, an area AR2A that is short in the scanning direction can be exposed while the mask M and the substrate P are stationary.
  • the projected pattern image is projected in the moving direction (scanning direction) of the substrate P. May shake continuously.
  • the longitudinal direction of the line pattern of the L / S pattern 42 of the mask M is made to coincide with the moving direction of the substrate P in order to transfer the pattern to the area AR 2 B well even if the pattern image is blurred. It is desirable to keep.
  • the edge region AR2 of the substrate P which is difficult to hold the liquid under the projection optical system PL (image side), is exposed without passing through the liquid.
  • the liquid is flowing out of the substrate.
  • the optical characteristics of the projection optical system PL are optimized for immersion exposure, a desired imaging position cannot be obtained without passing through a liquid, but two-beam interference occurs without passing through a liquid.
  • the LZS pattern 42 can be formed on the substrate P without using a liquid.
  • the L / S pattern 42 as a dummy pattern is formed in the second area AR 2 other than the first area AR 1 where the device pattern 41 is formed on the substrate P. In this case, it is possible to avoid the inconvenience that occurs when the substrate P hits one side against the polishing surface of the CMP apparatus.
  • the second area AR 2 is exposed without liquid, but a collecting device for collecting the liquid flowing out of the substrate P is provided around the substrate P, and the second area AR 2 is exposed.
  • the exposure may be performed based on the two-beam interference method with the liquid disposed below the projection optical system PL or while the supply of the liquid is continued.
  • the liquid flows out of the substrate P, so that there is insufficient liquid between the projection optical system PL and the substrate P.
  • the second area AR2 is exposed under the exposure conditions that are resistant to differential focusing such as two-beam interferometry, so that an L / S pattern is formed in the second area AR2. it can.
  • the first area AR1 and the second area AR2 are separated by the shot area.
  • the first area AR1 and the second area AR2 are set in one short area. Is also good.
  • the area AR2 may be subjected to processing such as exposure or non-exposure using a method resistant to defocus.
  • the first area AR1 and the second area AR2 may be arranged in the scanning direction or may be separated in the non-scanning direction.c
  • the first area AR1 is exposed to light.
  • the second area AR2 is exposed, but the exposure of the second area AR2 may be performed before the first area AR1.
  • the exposure of the first area AR 1 is performed, thereby further improving the formation accuracy of the device pattern 41 of the first area AR 1 that requires high pattern formation accuracy. be able to.
  • the photoresist after the exposure light irradiation starts to deteriorate due to exposure to the outside air (air).
  • the first area AR1 is exposed. The time from the exposure of the area AR 1 to the development processing can be shortened, and the first area AR 1 to which the device pattern 41 has been exposed before the deterioration of the heat resist is accelerated. Can be developed.
  • the device pattern 41 can be formed with desired pattern formation accuracy.
  • the L / S pattern 42 is provided separately from the device pattern 41 on the mask M.
  • the second region AR is formed by using a part of the pattern of the device pattern 41. 2 may be exposed, or a pattern used for exposure of the second area AR2 may be provided on another mask.
  • the glass substrate MF on which the L / S pattern 42 is formed is used.
  • the mask P is fixed on the mask stage MS so as to be juxtaposed with the mask M, and the image of the pattern 42 formed on the glass substrate MF is placed on the substrate P via an opening (not shown) of the mask stage MST.
  • the second area AR 2 may be exposed by projecting the light onto the two area AR 2.
  • the pattern used when exposing the second area AR2 is not limited to the L / S pattern, and the fineness may be the same as the device pattern 41 or may be coarser than the device pattern 41. It may be a pattern. In short, it is only necessary to form a pattern that does not cause any problem in performing the CMP process in the subsequent process.
  • FIG. 9 is a diagram showing another example of the optical system when exposing the second area AR2.
  • a first lens system 81 including a collimating lens and a light beam passing through the first lens system 81 are located downstream of an optical path of a light source 80 capable of emitting coherent light such as laser light.
  • a half mirror 82 that splits the light into two light beams, a second lens system 83, and an aperture stop 85 are provided.
  • the light beam emitted from the light source 80 passes through the first lens system 81, is split into two light beams by the half mirror 82, and the two light beams enter the projection optical system PL via the second lens system 83. I do.
  • an interference fringe pattern is formed by a two-beam interference method based on two beams.
  • the light source 80 the light source of the illumination optical system I may be used, or a light source different from the illumination optical system IL may be used.
  • Her The interference fringe pitch can be changed by providing the mirrors 82 so as to be movable in the tilt direction and tilting the half mirrors 82 to change the directions of the two light beams as shown by the broken line 8 2 ′.
  • a slit member having two slit-shaped openings may be arranged on the optical path, and an interference fringe pattern may be formed by two light beams passing through each slit-shaped opening.
  • the second region AR 2 is exposed under the exposure condition that is resistant to defocusing such as the two-beam interference method, but when the second region AR 2 is exposed, the liquid 50
  • the position of the Z stage 51 in the Z-axis direction may be adjusted in consideration of the image plane displacement caused by the outflow.
  • the second area AR2 may be exposed at an interval different from the interval between the projection optical system PL and the substrate P when exposing the first area AR1.
  • the position of an image plane formed via the projection optical system PL may be adjusted. That is, even when the liquid between the projection optical system PL and the substrate P is not enough, the image plane position is set so that the image plane is formed at the same position in the Z-axis direction as when the first area AR1 is exposed. Adjustments may be made. This adjustment of the image plane position is achieved by adjusting the projection optical system PL, for example, by moving some lenses to change the spherical aberration.
  • the image plane position can also be adjusted by adjusting the wavelength of the exposure light EL or moving the mask M. It goes without saying that the position adjustment of the Z stage 51 and the adjustment of the image plane position may be used together. Further, the numerical aperture of the projection optical system PL when exposing the first area AR1 may be simply made smaller than when exposing the second area AR2 without changing the illumination conditions as in the above embodiment. . Further, the width of the line pattern formed in the second area AR2 or the width of the space between the line pattern and the line pattern may be adjusted by the exposure amount. In the above embodiment, a force CMP process for stabilizing a post-process such as a CMP process is not performed by forming a pattern also in the second region AR2 which is an edge region.
  • the edge area AR2 may not be exposed during the exposure processing based on the immersion method. This can prevent the liquid from flowing out of the substrate.
  • the exposure apparatus EX of the present embodiment is a so-called scanning stepper. Therefore, when scanning exposure is performed by moving the substrate P in the scanning direction ( ⁇ X direction) indicated by the arrow Xa (see FIG. 3), the supply pipe 3, the supply nozzles 4A to 4C, the collection pipe 4, The liquid 50 is supplied and recovered by the liquid supply device 1 and the liquid recovery device 2 using the recovery nozzles 5A and 5B.
  • the liquid 50 is supplied from the liquid supply device 1 to the projection optical system PL and the substrate P through the supply pipe 3 and the supply nozzle 4 (4A to 4C). While being supplied, the liquid 50 is recovered by the liquid recovery device 2 via the recovery nozzle 5 (5A, 5B) and the recovery pipe 6, and is moved in the X direction so as to fill the space between the lens 60 and the substrate P. Liquid 50 flows.
  • the supply pipe 10 when scanning exposure is performed by moving the substrate P in the scanning direction (+ X direction) indicated by the arrow Xb, the supply pipe 10, the supply nozzles 8A to 8C, the collection pipe 11, and the collection nozzle 9 A
  • the liquid 50 is supplied and collected by the liquid supply device 1 and the liquid recovery device 2 by using the liquid supply device 9B and the liquid supply device 9B. That is, when the substrate P moves in the + X direction, the liquid 50 is supplied between the projection optical system PL and the substrate P from the liquid supply device 1 through the supply pipe 10 and the supply nozzle 8 (8A-8C).
  • the liquid 50 is collected in the liquid collection device 2 via the collection nozzle 9 (9A, 9B) and the collection pipe 11 so as to fill the space between the lens 60 and the substrate P.
  • Liquid 50 flows in + X direction.
  • the control device CONT uses the liquid supply device 1 and the liquid recovery device 2 to flow the liquid 50 along the moving direction of the substrate P.
  • the liquid 50 supplied from the liquid supply device 1 via the supply nozzle 4 flows so as to be drawn into the space 56 with the movement of the substrate P in the X direction.
  • the liquid 50 can be easily supplied to the space 56 even if the supply energy is small.
  • the substrate P can be scanned in either the + X direction or the 1X direction.
  • the space can be filled with liquid 50, and high resolution and wide depth of focus can be obtained.
  • FIG. 10 is a schematic configuration diagram of a twin-stage type exposure apparatus equipped with two stages for holding a substrate P.
  • the twin-stage type exposure apparatus has a first substrate stage (first movable body) PST 1 and a second substrate stage that can independently move on a common base 91 while holding the substrate P. (Second movable body) PST 2 is provided.
  • the twin-stage type exposure apparatus has an exposure station A (liquid immersion exposure station) and a measuring station B (normal exposure station).
  • the exposure station A includes the system described with reference to FIG.
  • the exposure light EL is applied to the first area AR 1 of the substrate P via the projection optical system (first optical system) PL and the liquid 50 filled between the substrate P and the projection optical system PL .
  • FIG. 10 does not show a liquid supply device, a liquid recovery device, and the like.
  • the reference members 94 and 94 'on the first and second substrate stages PST1 and PST2 are provided via the mask M and the projection optical system PL.
  • Reference mark A mask alignment system 89 for detecting MFM is provided.
  • the exposure station A is provided with a focus / leveling detection system 84 for detecting surface information (positional information and tilt information in the Z-axis direction) on the surface of the substrate P.
  • the forcing force leveling detection system 84 includes a projection system 84A for projecting detection light onto the surface of the substrate P and a light receiving system 84B for receiving light reflected from the substrate P.
  • the measuring station B is provided at a position conjugate with the substrate P supported on the substrate stage PST 2 (PST 1), and has a glass substrate 95 on which a plurality of patterns including an LS pattern are formed, and a glass substrate.
  • a second illumination optical system (second optical system) that illuminates the exposure light EL 2 on the pattern of the material 95 (the second optical system).
  • the second projection optical system (second optical system) PL 2 that projects onto the substrate P on the substrate P and the alignment mark on the substrate P or the first and second substrates
  • a leveling detection system 93 is provided.
  • the second region AR2 of the substrate P is exposed to the exposure light EL2 via the second projection optical system PL2 without liquid between the second projection optical system PL2 and the substrate P. I do.
  • FIG. 11 is a plan view of the glass substrate 95. As shown in FIG. 11, the glass substrate 95 is a disk and has a plurality of patterns. In the example shown in FIG.
  • the L / S pattern 96 having a line pattern extending in the first direction (Y-axis direction), the dot pattern 97 having a large number of dots, and the first L / S pattern 98 having a line pattern extending in a second direction (X-axis direction) perpendicular to the direction of the block, and a block pattern 9 in which rectangular light-shielding patterns are provided in a staggered (chessboard-like) manner. 9 are provided at substantially equal intervals in the circumferential direction of the glass substrate 95. Note that the pattern shape is not limited to that shown in FIG.
  • the glass substrate 95 is rotatable in the 0 Z direction about the shaft 95A.
  • the L / S pattern 96 is arranged on the optical path of the exposure light EL2.
  • the glass substrate 95 is not limited to a disk shape, and may be a plate member having a rectangular shape in plan view as shown in FIG.
  • a plurality of patterns 96 to 99 arranged in a predetermined direction are formed on the rectangular glass base 95.
  • the glass substrate 95 ′ can be translated in the predetermined direction, and by moving in the predetermined direction, one of a plurality of patterns 96 to 99 on the glass substrate 95 ′ is changed.
  • Exposure light EL 2 As shown in FIG.
  • the reference members 94, 94 provided on the first and second substrate stages PST1, PST2 respectively have A reference mark PFM detected by the substrate alignment system 92 and a reference mark MFM detected by the mask alignment system 89 are provided in a predetermined positional relationship.
  • the surface is almost flat, and also serves as a reference plane for the focus 'leveling detection system.Furthermore, the surface of the reference members 94, 94' is at the same height as the surface of the substrate P.
  • the configuration of the above-mentioned focus / leveling detection system for example, the configuration disclosed in Japanese Patent Application Laid-Open No. 8-37149 can be used.
  • the configuration of the substrate alignment system 92 is disclosed in The configuration of the mask alignment system 89 can be, for example, the configuration disclosed in Japanese Patent Application Laid-Open No. 7-176468. The contents described in each of these documents are incorporated as a part of the description of the text as far as is permitted by the laws of the country designated or selected in this international application.
  • the operation of the twin-stage type exposure apparatus will be described with reference to Fig. 10.
  • the measurement process of the substrate P on the second substrate stage PST 2 and the second substrate stage PST 2 using the second projection optical system PL 2 are performed in the measurement station B.
  • Second area AR 2 on held substrate P Exposure is performed without the intermediary of the liquid.Before the substrate P that has been exposed in the first area AR1 at the exposure station A, the measurement processing is performed at the measurement station B and the exposure processing is performed on the second area AR2. Has been performed in advance.
  • the substrate alignment system 92, the focus / leveling detection system 93, and the reference member 94 ′ are connected. Measurement processing is performed using no liquid.
  • the control device C ⁇ NT monitors the output of the laser interferometer that detects the position of the second substrate stage PST 2 in the XY direction, and moves the second substrate stage PST 2.
  • the substrate alignment system 92 detects a plurality of alignment marks (not shown) formed on the substrate P corresponding to the shot areas without passing through the liquid.
  • the second substrate stage PST 2 is stopped.
  • the position information of each alignment mark in the coordinate system defined by the laser interferometer is measured, and the measurement result is stored in the controller C0NT.
  • the substrate alignment system 92 can detect an alignment mark on the moving substrate P, the second substrate stage PST 2 need not be stopped.
  • the surface information of the substrate P is detected by the focus / leveling detection system 93 without passing through the liquid.
  • the detection of surface information by the focus and repeller detection system 93 is performed, for example, for every shot area on the substrate P, and the detection results correspond to the position of the substrate P in the scanning direction (X-axis direction).
  • CONT Stored in CONT.
  • the control device CONT operates so that the detection area of the substrate alignment system 92 is positioned on the reference member 94 ′. 2 Move the substrate stage PST 2.
  • the substrate alignment system 92 detects the reference mark PFM on the reference member 94 'and measures the position information of the reference mark PFM in the coordinate system defined by the laser interferometer.
  • Completion of the detection process of the reference mark PFM causes the positional relationship between the reference mark PFM and a plurality of alignment marks on the substrate P, that is, the positional relationship between the reference mark PFM and the plurality of shot areas on the substrate P, respectively. That is what was required. Also, the reference mark PFM of the reference member 94 ′ on the second substrate stage PST2 and the exposure stage W
  • the control device CONT Before or after detecting the reference mark PFM on the reference member 94 ′ by the substrate alignment system 92, the control device CONT focuses on the surface information of the surface (reference surface) of the reference member 94 ′. Detected by ring detection system 93. By the completion of the detection processing of the surface of the reference member 94 ', the relationship between the surface of the reference member 94' and the surface of the substrate P has been obtained.
  • the exposure processing is performed on the second area AR2 that does not pass through the liquid using the second projection optical system PL2.
  • one of the plurality of patterns 96 to 99 of the glass substrate 95 is formed according to the device pattern 41 formed in the first region AR1. Selected and placed on the optical path of the exposure light EL2.
  • a pattern used for exposing the second area AR2 is selected based on the shape of the device pattern 41. For example, if the device pattern 41 is an L / S pattern extending in a predetermined direction, the pattern exposed on the second area AR2 is also an L / S pattern extending in the predetermined direction.
  • a pattern exposed to the second area AR2 is also a dot pattern.
  • the second area AR2 is exposed to a pattern similar to (or the same as) the pattern exposed to the first area AR1. This makes it possible to prevent the substrate P from hitting the CMP polished surface even in, for example, the CMP process, thereby preventing the inconvenience.
  • a pattern used to expose the second area AR2 may be selected based on the pattern formation density of the device pattern 41.
  • the pattern formation density is a ratio of a pattern formed per unit area on the substrate P, in other words, a ratio of an area irradiated with exposure light.
  • line width and width A plurality of L / S patterns each having a different ratio from the L / S pattern are provided, and one L / S pattern is formed from the plurality of L / S patterns in accordance with the pattern formation density of the device pattern 41 formed in the first area AR1.
  • the / S pattern and exposing the second area AR2 it is possible to prevent the inconvenience that occurs when the substrate P collides with the CMP polishing surface in the CMP processing.
  • the first substrate stage PST 1 moves to the measurement station B, and in parallel, the second substrate stage PST 2 moves to the exposure station A, where the first substrate stage PST 1 and the second substrate stage PST 1 Exchange work (swapping) with 2 is performed.
  • the substrate P after the exposure processing on the first substrate stage PST1 is unloaded and transported to the developing device, and the substrate P before the exposure processing is transferred to the first substrate stage PST1.
  • the substrate P is subjected to measurement processing and exposure processing.
  • the second substrate stage PST2 is positioned such that the reference member 94 'of the second substrate stage PST2 faces the projection optical system PL.
  • the controller CONT starts supplying the liquid 50 using the liquid supply device, fills the space between the projection optical system PL and the reference member 94 'with the liquid 50, and performs the measurement process via the liquid 50.
  • the control unit CON T as can detect the reference mark MFM on the reference member 94 'by Masukuaraimen Bok system 89, while c appreciated that moving the second substrate stage PST 2 in this state of the projection optical system PL
  • the controller CONT starts supply and recovery of the liquid 50 by the liquid supply device and the liquid recovery device, and fills the space between the projection optical system PL and the reference member 94 'with the liquid.
  • the control unit CONT detects the reference mark MFM through the mask M, the projection optical system PL, and the liquid 50 by the mask alignment system 89. That is, the positional relationship between the mark of the mask M and the reference mark MFM is detected via the projection optical system PL and the liquid 50.
  • the position of the mask M in the XY plane that is, the projection position information of the image of the pattern of the mask M is detected using the reference mark MFM via the projection optical system PL and the liquid 50.
  • the control device CONT focuses on the surface (reference surface) of the reference member 94 'while the liquid 50 is supplied between the projection optical system PL and the reference member 94'.
  • the leveling detection system 84 detects the focus.
  • the relationship between the image plane formed via the projection optical system PL and the liquid 50 and the surface of the reference member 94 ' is measured.
  • the controller CONT temporarily stops driving the liquid supply device and the liquid recovery device, and then moves the second substrate stage S so that the projection optical system PL and the substrate P face each other. Move PT 2.
  • the controller CONT drives the liquid supply device and the liquid recovery device to form a liquid immersion portion between the projection optical system PL and the substrate P, and exposes the second region AR2 to the second substrate.
  • the exposure of the device pattern 41 to the first area AR1 of the substrate P on the stage PST2 is started.
  • the scanning exposure for each shot area on the substrate P is started via the projection optical system PL and the liquid 50 using the information obtained during the above-described measurement processing.
  • information on the positional relationship between the reference mark PFM obtained before the supply of the liquid 50 and each shot area (the position of the shot area obtained in advance at the measuring station B).
  • the position of each shot area on the substrate P and the mask M are aligned based on the projection position information of the image of the pattern of the mask M obtained by using the reference mark MFM.
  • the reference part determined before the supply of the liquid 50 was used.
  • the surface information on the surface of the substrate P may be detected using the focus leveling detection system 84 during the scanning exposure, and may be used to confirm the adjustment result of the positional relationship between the surface of the substrate P and the image surface. .
  • the surface ft information of the substrate P surface is detected using the focus leveling detection system 84, and the surface information detected during the scanning exposure is further taken into account to obtain an image of the substrate P surface and the image. You may make it adjust the positional relationship with a surface.
  • the adjustment of the positional relationship between the surface of the substrate P and the image plane may be performed by moving the second substrate stage PST 2 holding the substrate P, or the mask M or the projection optical system PL.
  • the image plane may be adjusted to the surface of the substrate P by moving a part of the plurality of lenses constituting the lens. Then, for the substrate P before the exposure processing, which is moved to the first substrate stage PST 1 moved to the measurement station B, in the same manner as the above-described procedure, the measurement processing using the reference member 94 and the liquid are not interposed. Exposure processing is performed on the second area AR2.
  • a second illumination optical system IL2 for irradiating the exposure light EL2 and a second optical system including the second projection optical system PL2 are provided respectively, those of the first and second areas AR1 and AR2 are provided. Exposure processing for each of them can be performed in parallel, and the throughput of the exposure processing can be improved.
  • a plurality of patterns are provided on the glass substrate 95, and among the plurality of patterns, according to the device pattern 41 to be formed in the first area AR1.
  • the mask station is transferred to the measurement station B.
  • a mask having a pattern for exposing the second area AR 2 of the substrate P is placed on the mask stage MST, and the pattern of the mask is exposed to the second area of the substrate P using the exposure light EL 2. You may make it expose to AR2.
  • the optical system described with reference to FIG. 9 and the like may be provided at the measurement station B, and the second area AR 2 on the substrate P may be exposed by the two-beam interference method. .
  • the half mirror 82 it is preferable to drive the half mirror 82 according to the device pattern 41 of the first area AR 1 and to expose at an interference fringe pitch corresponding to the pattern formation density of the device pattern 41.
  • exposure light having different wavelengths is used when exposing the first area AR1 and exposing the second area AR2. Since the second area AR 2 is an edge portion of the substrate P and the pattern formation accuracy is acceptable to some extent, for example, when exposing the first area AR 1, a short-wavelength laser beam is used, and the second area AR 2 is exposed.
  • the light beam emitted from the light source of the exposure light EL of the exposure station A is branched, for example, using an optical fiber and transmitted to the measurement station B, and the branched light is used for the second area AR 2 on the substrate P. Can also be exposed. Further, since the second projection optical system PL 2 is allowed even if the resolution is relatively low, the cost of the apparatus can be reduced. However, it goes without saying that exposure light having the same wavelength may be used. In the present embodiment, a twin-stage type exposure apparatus having two substrate stages has been described as an example, but as shown in FIG.
  • a projection optical system PL that irradiates exposure light EL to first area AR1 on substrate P, and a second projection optical system PL that irradiates exposure light EL2 to second area AR2 2 may be provided.
  • the exposure light EL and the exposure light EL 2 may be emitted from different light sources, or may be emitted from the same light source.
  • alignment processing is performed on the substrate P before exposure processing loaded on the substrate stage PST.
  • the first area AR is transmitted through the projection optical system PL and the liquid 50. Exposure of 1 is performed.
  • the second optical system for exposing the second area AR2 on the substrate P does not need to be provided alongside the projection optical system (first optical system) PL. Coating a resist and developing the exposed substrate ⁇ Expose the second area AR 2 on the substrate P halfway along the transport path between the developer device and the substrate stage PST of the exposure device. May be provided with an exposure processing section having the second optical system.
  • the substrate P is placed on the substrate stage PST and is exposed through the projection optical system PL before or after the exposure process (immediately after the photoresist is applied in a short time, or
  • the second area AR2 can be exposed just before being developed in a paper.
  • an exposure processing unit (second optical system) for exposing the second area AR2 of the substrate P may be provided in the co-developing device.
  • an exposure apparatus including a first optical system that irradiates the first region AR1 of the substrate P with exposure light and a second optical system that irradiates the second region AR2 with exposure light includes a projection optical system and a liquid.
  • an immersion exposure apparatus that performs exposure via a liquid it is of course possible to apply the present invention to an exposure apparatus that performs exposure without using a liquid.
  • the first optical system for exposing the first area AR 1 is an optical system using vacuum ultraviolet light, and the life of optical elements and light sources is relatively short, this first optical system is used.
  • the second area AR2 may be defined by the size of the immersion area. In other words, the area where the liquid can be held in the optical path of the exposure light may be defined as the first area AR1, and the area where the optical path of the exposure light cannot be filled with the liquid may be defined as the second area AR2.
  • the liquid supply device and the liquid recovery device in the above-described embodiment have a supply nozzle and a recovery nozzle on both sides of the projection area of the projection optical system PL, and one side of the projection area according to the scanning direction of the substrate P. This is a configuration in which the liquid is supplied from the other side and the liquid is recovered on the other side.However, the configuration of the liquid supply device and the liquid recovery device is not limited to this. If possible.
  • the “local immersion area” refers to an immersion area smaller than the substrate P.
  • the liquid 50 in the above embodiment is composed of pure water. Pure water has the advantage that it can be easily obtained in large quantities at a semiconductor manufacturing plant or the like, and that it has no adverse effect on the optical resistor (lens) or the like on the substrate P. In addition, pure water has no adverse effect on the environment and has very low impurity content, so it can be expected to clean the surface of the substrate and the surface of the optical element provided on the tip end of the projection optical system PL. .
  • the refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is about 1.47 to 1.4.4, and Ar is used as a light source of the exposure light EL.
  • F excimer laser light wavelength: 193 nm
  • the wavelength is shortened to 1 / n on the substrate P, that is, about 131-134 nm, and high resolution is obtained.
  • the depth of focus is expanded to about n times compared to that in the air, that is, about 1.47 to 1.44 times, so if it is sufficient to secure the same depth of focus as when using it in the air
  • the numerical aperture of the projection optical system PL can be further increased, and the resolution is also improved in this regard.
  • the lens 60 is attached to the tip of the projection optical system PL, but the optical element attached to the tip of the projection optical system PL includes the optical characteristics of the projection optical system PL, For example, it may be an optical plate used for adjusting aberrations (spherical aberration, coma aberration, etc.) c or a parallel flat plate that can transmit the exposure light EL.
  • the transmittance of the projection optical system PL and the exposure light EL on the substrate P during transportation, assembly, and adjustment of the exposure apparatus EX Even if a substance (for example, a silicon-based organic substance, etc.) that reduces the illuminance and the uniformity of the illuminance distribution adheres to the parallel plate, it is sufficient to replace the parallel plate just before supplying the liquid 50, There is an advantage that the replacement cost is lower than in the case where the optical element that comes into contact with the liquid 50 is a lens.
  • the surface of the optical element that comes into contact with the liquid 50 due to scattering particles generated from the resist due to the irradiation of the exposure light EL or the adhesion of impurities in the liquid 50 is stained.
  • the cost of replacement parts and the time required for replacement can be reduced as compared with a lens, and maintenance costs can be reduced. (Running cost) and a decrease in throughput can be suppressed.
  • liquid 5 0 of the above embodiment is water
  • a liquid other than water may be, if example embodiment, when the light source of exposure light EL is an F 2 laser, the F 2 laser beam is transmitted through the water does not, in this case, as the liquid 5 0 may be a F 2 laser beam capable of transmitting as fluorine-based oil (full Uz Motokei liquid) or over full Uz polyether (PFPE).
  • the liquid 50 other liquids that have transparency to the exposure light EL, have the highest possible refractive index, and are stable with respect to the photoresist applied to the projection optical system PL and the substrate P surface ( It is also possible to use, for example, Seda Oil.
  • the substrate P in each of the above embodiments is not limited to a semiconductor wafer for manufacturing a semiconductor device, but may be a glass substrate for a display device, a ceramic wafer for a thin-film magnetic head, or a mask or reticle used in an exposure apparatus. Of the original (Eng synthetic stone, silicon wafer) etc. are applied.
  • the exposure apparatus EX is a step of scanning and exposing the pattern of the mask M by synchronously moving the mask M and the substrate P.
  • the mask M and the substrate P can also be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is exposed collectively while the substrate is stationary, and the substrate P is sequentially stepped.
  • the present invention can be applied to a step-and-stitch type exposure apparatus that transfers at least two patterns on a substrate P while partially overlapping each other.
  • the type of exposure equipment EX is not limited to exposure equipment for manufacturing semiconductor elements, which exposes semiconductor element patterns to the substrate P, but also exposure equipment for manufacturing liquid crystal display elements or displays, and thin film magnets.
  • the present invention can be widely applied to an exposure apparatus for manufacturing a head, an image sensor (CCD), a reticle or a mask, and the like. Further, as described above, the structure and the exposure operation of the c- twin stage type exposure apparatus that can be applied to the twin stage type exposure apparatus are described in, for example, JP-A-10-163099 and JP-A-10-13099. — 2 1 4783 (corresponding U.S. Patents 6,341,007, 6,400,441, 6,549,269 and 6,590,634), Special Table 2000—505958 (corresponding U.S. Patents 5,969,441) Or as disclosed in U.S. Patent No.
  • the drive mechanism for each stage PST, MS ⁇ is as follows: a magnet unit with a two-dimensional magnet arranged and an armature unit with a two-dimensional coil arranged face each other to drive each stage PST, MST by electromagnetic force Alternatively, a flat motor may be used. In this case, one of the magnet unit and the armature unit is connected to the stages PST and MS, and the other of the magnet unit and the armature unit is provided on the moving surface side of the stage PST and MST. I'll do it.
  • the reaction force generated by the movement of the substrate stage PST may be mechanically released to the floor (ground) using a frame member so as not to be transmitted to the projection optical system PL.
  • the method of dealing with this reaction force is disclosed in detail in, for example, U.S. Pat. No. 5,528,118 (Japanese Patent Laid-Open Publication No. Hei 8-166475), and this U.S. Pat. To the extent permitted by the laws of the country specified or selected in the international application, they are incorporated by reference into this text.
  • the reaction force generated by the movement of the mask stage MST may be mechanically released to the floor (ground) using a frame member so as not to be transmitted to the projection optical system PL.
  • the method of dealing with this reaction force is disclosed in detail in, for example, US Pat. No. 5,874,820 (Japanese Patent Application Laid-Open Publication No. H8-330224), and is specified or designated in the present international application.
  • the exposure apparatus EX controls various subsystems including the respective components listed in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy.
  • Manufactured by assembling Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical systems were performed before and after this assembly. Adjustments are made to achieve electrical accuracy.
  • the process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems.
  • microdevices such as semiconductor devices have the following steps: Step 201 for designing the function and performance of the microdevice, Step 202 for manufacturing a mask (reticle) based on this design step, and Device.
  • Step 203 for manufacturing a substrate which is a base material of the above Exposure processing step 204 for exposing a mask pattern onto the substrate using the exposure apparatus EX of the above-described embodiment, Device assembly step (dicing step, bonding step, package It is manufactured through the steps of 205, inspection step 206, etc.
  • INDUSTRIAL APPLICABILITY According to the present invention, when performing immersion exposure, the first region and the second region on the substrate are exposed under different exposure conditions, so that the outflow of liquid to the outside of the substrate is suppressed. However, it is possible to transfer a pattern well to an edge region of a substrate, and to manufacture a device capable of exhibiting desired performance.

Abstract

Selon l'invention, lorsqu'un substrat (P) est exposé à la lumière par le biais d'un système optique de projection, un liquide (50) est fourni entre le système optique de projection et le substrat (P). En conséquence, une zone de formation de modèle (AR1) du substrat (P) est exposée à la lumière par le biais d'un système optique de projection (PL) et du liquide, et une zone de bord (AR2) du substrat (P) est exposée à la lumière par le biais d'un système optique de projection (PL2) mais pas du liquide. Une exposition à grande profondeur de foyer peut être accomplie pendant que le liquide est empêché de s'écouler hors du substrat.
PCT/JP2003/015408 2002-12-10 2003-12-02 Procede d'exposition, appareil d'exposition et procede de fabrication du dispositif WO2004053951A1 (fr)

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JP2003-169903 2003-06-13

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