WO2004053957A1 - Appareil de detection de position de surface, procede d'exposition et procede de fabrication d'un dispositif - Google Patents

Appareil de detection de position de surface, procede d'exposition et procede de fabrication d'un dispositif Download PDF

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Publication number
WO2004053957A1
WO2004053957A1 PCT/JP2003/015736 JP0315736W WO2004053957A1 WO 2004053957 A1 WO2004053957 A1 WO 2004053957A1 JP 0315736 W JP0315736 W JP 0315736W WO 2004053957 A1 WO2004053957 A1 WO 2004053957A1
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WO
WIPO (PCT)
Prior art keywords
substrate
light
liquid
detection
detected
Prior art date
Application number
PCT/JP2003/015736
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English (en)
Japanese (ja)
Inventor
Yasuhiro Hidaka
Hideo Mizutani
Nobutaka Magome
Soichi Owa
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU2003289272A priority Critical patent/AU2003289272A1/en
Publication of WO2004053957A1 publication Critical patent/WO2004053957A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Definitions

  • the present invention relates to a surface position detection device for optically detecting surface position information of a surface to be inspected, an exposure method for exposing an image of a pattern of a mask on a substrate, and a device manufacturing method.
  • Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.
  • An exposure apparatus used in the photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate. The mask stage and the pattern of the mask are sequentially moved through the substrate stage.
  • the c- exposure device which transfers the light to the substrate via the projection optical system, has an autofocus detection system that detects surface position information on the substrate surface in order to align the substrate surface with the image plane of the projection optical system.
  • AF detection system there is an oblique incidence system disclosed in, for example, JP-A-6-66543.
  • focus detection light is applied to the substrate surface from an oblique direction, and positional information on the substrate surface is detected by light reflected on the substrate surface.
  • the oblique incidence AF detection system as shown in the schematic diagram of Fig. 10 (a), when the surface of the substrate P, which is the surface to be inspected, moves in the vertical direction, for example, as indicated by the symbol P ', the illuminated AF Since the reflected light of the detection light L on the substrate surface is displaced in the direction perpendicular to the optical axis of the optical system that constitutes the AF detection system, by detecting the amount of deviation D a, Surface position information can be detected.
  • ⁇ is the exposure wavelength
  • ⁇ is the numerical aperture of the projection optical system
  • k 2 is the process coefficient
  • the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent, and the wavelength of the exposure light in the liquid is 1 / ⁇ ( ⁇ is the refraction of the liquid in air).
  • the resolution is usually improved by using the ratio of about 1.2 to 1.6), and the depth of focus is increased by about ⁇ times.
  • the position of the detection light L (reflected light on the substrate surface) incident on the light receiving surface is shifted, and the AF detection system incorrectly judges that the position of the substrate has changed.
  • the surface position of the substrate surface cannot be measured with high accuracy.
  • the present invention has been made in view of such circumstances, and a surface position at which surface position information on a substrate surface can be accurately detected even when a refractive index on an optical path of detection light of an AF detection system changes.
  • the primary purpose is to provide a detection device.
  • Another object of the present invention is to provide an exposure method and a device manufacturing method capable of manufacturing a device by detecting substrate surface position information even if the refractive index on the optical path of the detection light of the AF detection system changes. I do.
  • an exposure method that can form a buttered image on the substrate with high precision is also used. Provision is the third purpose.
  • a fourth object of the present invention is to provide an exposure method capable of forming a pattern image on a substrate with high accuracy even when the temperature of the liquid changes.
  • the present invention employs the following configurations corresponding to FIGS.
  • the detection light is projected on the surface to be detected (S), and the light to be detected is obtained based on information obtained by receiving the reflected light from the surface to be detected (S).
  • a surface position detecting device for detecting a surface position of the surface (S) is provided.
  • a plurality of detection light on the substrate surface (S) L 1, L 2) having different angles of incidence with projects in (S 1 ⁇ 2), the reflected light from the substrate surface (S) (L 1 r, L 2 r) Detecting the refractive index information of the optical paths of the detection light (L1, L2) and the reflected light (L1r, L2r) by receiving light;
  • the amount of change in the refractive index on the optical path can be obtained based on (difference). Since the detected surface position information can be corrected based on the obtained refractive index change amount, which is the refractive index change amount, the surface position information of the test surface can be obtained with high accuracy.
  • a plurality of light sources and an optical system may be used.
  • a tunable laser or a light source having multiple wavelengths is used together with a wavelength selection filter, an etalon, a spectroscope, a prism, etc. to change the optical path for each wavelength of light so that the angle of incidence on the surface to be measured is different. You may.
  • the optical path may be split or deflected using a pupil splitter or a galvanomirror.
  • the detection light is projected on the surface (S) to be detected, and based on the information obtained by receiving the reflected light from the surface (S) to be detected,
  • a surface position detecting device for detecting a surface position of a surface (S) comprising:
  • a light receiving system (9) for receiving light reflected from the surface to be inspected S.
  • a light receiving system (9) for receiving light reflected from the surface to be inspected S.
  • a plurality of detection light beams having different wavelengths are projected by utilizing the fact that each of the refraction angles when light beams having different wavelengths are incident on an object shows different values.
  • the detection surface can be irradiated with detection light at different incident angles.
  • the detection light is projected on the surface to be detected via the light transmitting member.
  • the light transmitting member include an optical element constituting the projection optical system, and a light-transmissive parallel flat plate disposed between the projection optical system and the surface to be measured.
  • the image of the pattern is projected onto the substrate (P) by the projection optical system (PL) via the liquid (50), and the substrate (P) is subjected to immersion exposure.
  • Exposure method :
  • FIG. 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus provided with a surface position detecting device of the present invention.
  • FIG. 2 is a schematic configuration diagram showing a first embodiment of the surface position detecting device of the present invention.
  • FIG. 3 is an enlarged view of a main part showing a substrate on which the detection light is projected.
  • FIG. 4 is a diagram showing the relationship between the angle of incidence of the detection light on the substrate and the amount of error.
  • FIG. 5 is a flowchart showing an example of the surface position detecting method of the present invention.
  • FIG. 6 is a schematic configuration diagram showing a second embodiment of the surface position detecting device of the present invention.
  • FIG. 7 is a schematic configuration diagram showing a third embodiment of the surface position detecting device of the present invention.
  • FIGS. 8A and 8B are schematic diagrams showing a pupil splitter.
  • FIG. 9 is a flowchart illustrating an example of a semiconductor device manufacturing process.
  • FIGS. 10 (a) and (b) are schematic diagrams for explaining a conventional problem.
  • BEST MODE FOR CARRYING OUT THE INVENTION a surface position detecting device and an exposure method according to the present invention will be described with reference to the drawings, but the present invention is not limited thereto.
  • Figure 1 in c Figure 1 is a schematic structural diagram showing one embodiment of the old over Bok Fuokasu detecting device mounted exposure apparatus as a surface position detecting apparatus of the present invention, the exposure apparatus EX, supports a mask M A mask stage MS, a substrate stage PS for supporting the substrate P, an illumination optical system IL for illuminating the mask M supported by the mask stage MST with the exposure light EL, and a mask M illuminated with the exposure light EL
  • the projection optical system PL that projects and exposes the image of the pattern on the substrate P supported on the substrate stage PST, and the autofocus as a surface position detection device that detects surface position information on the surface S of the substrate P as the surface to be inspected Detector 100 and exposure unit EX It has a control device C 0 NT for overall control.
  • the exposure apparatus ⁇ ⁇ As the exposure apparatus ⁇ ⁇ , the mask ⁇ and the substrate ⁇ are synchronously moved in different directions (opposite directions) in the scanning direction, and the pattern formed on the mask ⁇ ⁇ is exposed on the substrate ⁇ .
  • a mold exposure apparatus a so-called scanning stepper
  • the direction that coincides with the optical axis AX of the projection optical system PL is the Z-axis direction
  • the synchronous movement direction (scanning direction) between the mask M and the substrate P in a plane perpendicular to the Z-axis direction is the X-axis direction.
  • the direction perpendicular to the Z-axis direction and the Y-axis direction is defined as the Y-axis direction.
  • the directions around the X, Y, and Z axes are 0 °, ⁇ , and, respectively.
  • the “substrate” includes a semiconductor wafer coated with a resist
  • the “mask” includes a reticle on which a device pattern to be reduced and projected onto the substrate is formed.
  • the illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light EL.
  • the exposure light source and an optical illuminator that equalizes the illuminance of the light flux emitted from the exposure light source.
  • the exposure light EL emitted from the illumination optical system IL includes, for example, ultraviolet bright lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength: 248 nm) emitted from a mercury lamp.
  • the mask stage MST supports the mask M and can move two-dimensionally in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane. And 0.
  • the mask stage MST is driven by a mask stage driving device MSTD such as a linear motor, etc.
  • the mask stage driving device MSTD is a control device C 0 Controlled by NT.
  • the two-dimensional position and rotation angle of the mask ⁇ ⁇ on the mask stage MST are measured in real time by a laser interferometer, and the measurement results are output to the control device C ⁇ .
  • the control device C 0 ⁇ ⁇ ⁇ ⁇ drives the mask stage driving device MS TD based on the measurement result of the laser interferometer to position the mask M supported by the mask stage MS ⁇ .
  • the projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification of 3, and is composed of a plurality of optical elements (lenses). These optical elements are mirrors as metal members. It is supported by cylinder PK.
  • the projection optical system PL is a reduction system in which the projection magnification 5 is, for example, 1/4 or 1/5. Note that the projection optical system PL may be either a unity magnification system or an enlargement system.
  • the projection optical system PL has optical characteristics
  • the imaging characteristic adjustment device PLC has, for example, a mechanism for adjusting the spacing of some of the lens groups constituting the projection optical system PL and a mechanism for adjusting the gas pressure in the lens chamber of some of the lens groups. By doing so, the optical characteristics such as the projection magnification and distortion of the projection optical system PL are corrected.
  • the imaging characteristic adjustment device PLC is controlled by the control device CONT.
  • the substrate stage PST supports the substrate P, and includes a Z stage 51 that holds the substrate P via a substrate holder, an XY stage 52 that supports the Z stage 51, and a base 53 that supports the XY stage 52.
  • the substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor.
  • the substrate stage drive PSTD is controlled by the controller CONT.
  • the Z stage 51 By driving the Z stage 51, the position of the substrate P held by the Z stage 51 in the Z-axis direction (final position), and the positions in the ⁇ and directions are controlled. Further, by driving the stage 52, the position of the substrate ⁇ in the ⁇ direction (the position in a direction substantially parallel to the image plane of the projection optical system PL) is controlled. That is, the Z stage 51 controls the force position and the inclination angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the autoleveling method, and the XY stage A ridge 52 positions the substrate P in the X-axis direction and the Y-axis direction.
  • a movable mirror 54 that moves with respect to the projection optical system PL together with the substrate stage PST is provided on the substrate stage PST ( ⁇ stage 51).
  • a laser interferometer 55 is provided at a position facing the movable mirror 54. The two-dimensional position and rotation angle of the substrate P on the substrate stage PST are measured in real time by the laser interferometer 55, and the measurement results are output to the control device CONT.
  • the controller CONT drives the substrate stage driving device PSTD based on the measurement result of the laser interferometer 55 to position the substrate P supported by the substrate stage PST.
  • an immersion method is applied in order to substantially shorten the exposure wavelength to improve angular image resolution and to substantially increase the depth of focus. Therefore, at least while the image of the pattern of the mask M is being transferred (projected) onto the substrate P, the surface of the substrate P and the tip surface (lower surface) 7 of the optical element on the substrate P side of the projection optical system PL are In the meantime, the predetermined liquid 50 is filled.
  • pure water is used as the liquid 50. Pure water can be used not only for ArF excimer laser light but also for exposure light EL such as ultraviolet emission lines (g-line, h-line, i-line) emitted from a mercury lamp and KrF excimer laser light (wavelength).
  • the exposure apparatus EX includes a liquid supply device 1 that supplies a predetermined liquid 50 to a space 56 between the front end surface 7 of the projection optical system PL and the substrate P, and a liquid recovery device that collects the liquid 50 in the space 56.
  • Device 2 is provided.
  • the liquid supply device 1 includes a tank for accommodating the liquid 50, a pressurizing pump, a temperature adjusting device for adjusting the liquid 50 supplied to the space 56 to a predetermined temperature, and the like.
  • the liquid supply device 1 supplies the liquid 50 to the space 56 via the supply pipe 3 and the supply nozzle 4.
  • the temperature adjustment device provided in the liquid supply device 1 adjusts the temperature of the liquid 50 to be supplied to the space 56 by, for example, the exposure device EX. Is set to be substantially the same as the temperature in the chamber in which is stored.
  • the liquid recovery device 2 includes a suction pump, a tank for storing the recovered liquid 50, and the like.
  • One end of a recovery pipe 6 is connected to the liquid recovery device 2, and a recovery nozzle 5 is connected to the other end of the recovery pipe 6.
  • the liquid recovery device 2 recovers the liquid 50 in the space 56 through the recovery nozzle 5 and the recovery pipe 6.
  • the controller CONT drives the liquid supply device 1 and supplies a predetermined amount of the liquid 50 per unit time to the space 56 via the supply pipe 3 and the supply nozzle 4.
  • the liquid recovery device 2 is driven to recover a predetermined amount of liquid 50 per unit time from the space 56 via the recovery nozzle 5 and the recovery pipe 6.
  • a predetermined amount of liquid 50 is held in the space 56 between the front end surface 7 of the projection optical system PL and the substrate P.
  • the intelligent focus detection device (AF detection device) 100 is a light transmission system 8 that projects detection light L (L1, L2) for AF detection onto the surface (test surface) S of the substrate P, A light receiving system 9 for receiving the reflection of the detection light L reflected by the surface S of the substrate P; As shown in FIG. 1, the light transmission system 8 transmits the two detection lights, the first detection light L1 and the second detection light L2, to the surface of the substrate P from different directions at different angles of incidence.
  • each of the detection light 1 and L 2 from the light transmission system 8 transmits a part (a part of the optical element) of the projection optical system PL as a light transmitting member, and the liquid 50 filled in the space 56.
  • the detection light L1, L2 is projected onto the surface S of the substrate P via a part of the projection optical system PL for the following reason. That is, in order to stably arrange the liquid 50 in the space 56, the distance d needs to be set to a predetermined amount (for example, about 2 to 3 mm) so that the surface tension of the liquid 50 can be maintained. is there.
  • the detection light L Since the light is projected onto the surface S of the substrate P through a part of the projection optical system PL, the detection light L is maintained while maintaining a desired distance d for stably disposing the liquid 50 in the space 56. 1, L 2 can be projected on the surface S of the substrate P. As a result, the degree of freedom in setting the distance d (working distance) between the tip surface 7 of the projection optical system PL and the surface S of the substrate P can be increased. Further, the incident angles of the detection lights L1 and L2 with respect to the surface S of the substrate P can be freely changed without being restricted by the position of the projection optical system PL.
  • the AF detection device 100 is configured to detect an image plane (imaging plane) formed via the projection optical system PL and the liquid 50 based on a detection signal of the light receiving system 9 obtained from light reflected on the surface S of the substrate P. Find the height position (focus ⁇ standing) of the substrate P surface in the Z-axis direction with respect to). Further, the AF detection device 100 can also obtain the attitude of the substrate P in the tilt direction by obtaining each focus position at a plurality of points on the surface of the substrate. The detection result of the AF detection device 100 is output to the control device CONT. Based on the detection result of the AF detection device 100, the control device CONT determines the position between the imaging plane of the projection optical system PL and the surface of the substrate P.
  • FIG. 2 is a configuration diagram showing a first embodiment of the AF detection apparatus 100.
  • the light transmitting system 8 of the AF detection device 100 includes a first light transmitting system 8 for projecting the first detection light 1 at a first incident angle 0 to the surface S of the substrate P.
  • the light receiving system 9 of the AF detection device 100 is provided corresponding to the first light transmitting system 8 ⁇ and receives the reflected light of the first detection light L 1 reflected on the surface S of the substrate P.
  • a second light receiving system 9B provided corresponding to the first light receiving system 9A and the second light transmitting system 8B, and receiving the second reflected light 2 reflected by the surface S of the substrate P; It has.
  • the first light transmission system 8A emits a non-photosensitive light flux (wavelength of about 400 nm to 900 nm) to the photoresist on the substrate P, and an AF light source 10 and a light source 10 was done
  • the slit light shaped by the light transmission slit 11 is used as the first detection light L 1 as a cylindrical lens 12, a relay lens 13, an optical path bending mirror 14, an aberration correcting plane plate 15, and The light enters the projection optical system PL via the objective lens 16.
  • the lens barrel PK has an opening, and the slit light enters the projection optical system PL through this opening.
  • the first detection light L1 incident on the projection optical system PL is projected through the liquid 50 onto the surface S of the substrate P at a first incident angle 0.
  • the reflected light L1r of the first detection light L1 reflected on the surface S of the substrate P is received by the first light receiving system 9A via the liquid 50 and a part of the projection optical system PL.
  • the lens barrel PK has an opening, and the reflected light 1 r is received by the first light receiving system 9 A through this opening.
  • C The first light receiving system 9 A is a projection optical system PL.
  • Objective lens 17 to which the reflected light L 1 r is incident through the mirror, a plane plate 18 for aberration correction, a vibrating mirror 19 vibrating at a predetermined cycle, a relay lens 20, and an astigmatic lens It comprises a cylindrical lens 21 for photovoltaic use, a light receiving slit 22 having a slit-shaped opening, and a light receiving sensor 23 made of, for example, silicon photo die.
  • the reflected light L 1 of the first detection light L 1 on the surface S of the substrate P is the objective lens 17, the aberration correction plane plate 18, the vibrating mirror 19, the relay lens 20, the cylindrical lens 21, The light is received by the light receiving sensor 23 via the light receiving slit 22.
  • the vibrating mirror 19 vibrates in the direction indicated by an arrow y at a predetermined cycle.
  • the image of the slit pattern formed on the light receiving slit 22 (the slit-like reflected light 1 r, which is shaped by the light transmitting slit 11 and reflected by the surface S of the substrate P) also vibrates. With the vibration of the image of the pattern, the amount of light passing through the opening of the light receiving slit 22 changes, and the light passing through the opening of the light receiving slit 22 reaches the light receiving sensor 23.
  • the position of the opening of the light receiving slit 22 is determined by the position of the surface S of the substrate
  • the light receiving slit 22 is provided so that the center of the opening of the light receiving slit 22 coincides with the vibration center of the image of the slit pattern when the image forming plane of L is aligned. Slit flutter received by 3 If the image of the image is detected at a constant period, the image plane of the projection optical system PL coincides with the surface S of the substrate P. On the other hand, when the imaging plane of the projection optical system PL does not match the surface S of the substrate P, the reflected light L 1 r based on the first detection light 1 is the optical axis of the first light receiving system 9 A.
  • the detection result of the light receiving sensor 23 is output to the control device CONT, and the control device CONT obtains the focus position of the surface S of the substrate P based on the light receiving result of the light receiving sensor 23.
  • the second light transmitting system 8B is provided in addition to the first light transmitting system 8A based on a focus position adjusting method or a temperature measuring method (refractive index change measuring method) according to the present invention described later.
  • the configuration is the same as that of the first light transmission system 8 A, and the description is omitted.
  • the second light receiving system 9B for receiving the reflected light L2r of the second detection light L2 on the surface of the substrate P has the same configuration as the first light receiving system 9A, so that the description thereof will be omitted. Omitted.
  • each of the detection lights L1 and L2 projected by each of the first light transmission system 8A and the second light transmission system 8B has the same wavelength.
  • FIG. 3 is an enlarged view near the surface S of the substrate P on which the first and second detection lights L1 and L2 are projected.
  • the control device CONT simultaneously projects the first and second detection lights L1 and L2 from the first and second light transmission systems 8A and 8B onto the surface S of the substrate P.
  • First detection light L 1 is projected on the surface S of the substrate P at an incident angle 0 through the liquid 5
  • the second test Idemitsu L 2 is the surface of the substrate P at the incident angle theta 2 via the liquid 5 0 Projected on S.
  • the reflected light L 1 r and L 2 at the surface S of the substrate P based on the first and second detection light L 1 and L 2 respectively This is received by the first and second light receiving systems 9A and 9B.
  • the liquid 50 is set to a predetermined temperature T, and the refractive index of the liquid 50 at this time is ⁇ .
  • the first and second detection light beams 1 and L 2 are projected at the same position on the surface S of the substrate ⁇ .
  • the substrate ⁇ moves in the ⁇ -axis direction, the reflected light is reflected and the deviation amount and the reflected light in the direction perpendicular to the optical axis of the 1r light receiving system are reflected.
  • the shift amount of L 2 r in the direction perpendicular to the optical axis of the light receiving system is the same.
  • the substrate P does not move in the Z axis direction, it changes from the temperature of the liquid 50 within T 2, consider the case where the refractive index of the liquid 50 eta changes by delta eta.
  • the first and second detection light beams L 1 and L 2 from the first and second light transmitting systems 8 ⁇ and 8 ⁇ change the refraction angle at the interface from the projection optical system PL to the liquid 50.
  • Change. With the change in the refraction angle, the optical paths of the first and second detection lights L 1 and L 2 fluctuate as shown by signs 1 ′ and L 2 ′.
  • the incident angle of the second detection light L 2 with respect to the surface S of the substrate P changes from 0 to 2 .
  • the optical path of the reflected light L 1 r of the first detection light L 1 is shifted by a distance D 1 in a direction perpendicular to the optical axis of the light receiving system 9 A to become the reflected light L 1 r ′.
  • the optical path of the second detection light L 2 of the reflected light L 2 r in this case c as the distance D 2 deviation reflected light L 2 r 'in a direction perpendicular to the optical axis of the light receiving system 9 B, the liquid Consider a case where the thickness is d and the refractive index of the liquid 50 changes from n to ⁇ n with temperature. In this case, the angle of incidence of the detection light on the substrate surface changes, and the amount of change is
  • the focus position detection error amount Ad based on the first detection light L 1 and the second detection light L 2 4 shows different values of the detection error ⁇ d 2 of the focus position based on the incident angle 0 of the detection light L with respect to the surface S of the substrate P and the surface P of the substrate P caused by the temperature change of the liquid.
  • Fig. 4 shows an example of the relationship between the detection error amount ⁇ d of the force position and Fig. 4.
  • the liquid 50 is pure water (water), and the water 50 corresponds to the working distance of the projection optical system PL.
  • the graph shows the relationship between the incident angle 0 of the detection light L and the focus detection error amount ⁇ d when the temperature changes by 0.01 ° C. when the thickness d is 1 mm.
  • Incident angle of 80 degrees of the detected light is 1, when the incident angle of 0 2 of the second detection light L 2 is set to 85 degrees, the temperature of the pure water is 0. 0 1 ° C change from the liquid 50 If it becomes T 2 and, from FIG. 4, the detection error amount delta d of the focus position based on the first detection light L 1 is about 20 nm, Four force scan position based on the second detection light L 2
  • the detection error ⁇ 2 is about 80 nm, that is, according to the example in Fig. 4, when the temperature of a liquid (water) 50 having a thickness of 1 mm changes by 0.01 ° C, two detection light beams are detected.
  • control device CONT determines the difference between the detection of the focus position obtained in advance by an experiment and a simulation.
  • the relationship between (Z, -Z 2 ) and the amount of change in the refractive index is stored, and the amount of change in the refractive index can be obtained based on the focus position Z or Z 2 detected using the AF detection device 100. it can. Since the change in the temperature of the liquid and the change in the refractive index are in a proportional relationship, the detection difference ( ⁇ , — ⁇ ⁇ ) of the focus position changes in proportion to the temperature change of the liquid.
  • the AF detection device 100 moves toward the surface of the substrate P based on the command of the control unit CONT.
  • the first detection light L 1 and the second detection light L 2 are projected, and the light L 1 r and L 2 r reflected from the surface of the substrate P corresponding to the detection light L 1 and L 2 are detected by the light receiving sensor 23. each received, detects a full Saiichi Kas position Z of the surface of the substrate P based on the first detection light L 1, the second based on the detection light L 2 and a focus position Z 2 of the surface of the substrate P respectively (Sutedzupu S
  • o control unit CONT determines the difference between the focus position Z and Z 2, which is detected (Z one Z 2), detecting the difference of the focus position stored in advance ( ⁇ - ⁇ ) and the refractive index of the liquid 50
  • the refractive index change amount ⁇ of the liquid 50 is determined based on the relationship information with the change amount ⁇ (step S2). Further, the controller CONT corrects the focus position ⁇ , based on the first detection light L1 obtained in step S1, based on the refractive index change amount ⁇ obtained in step S2.
  • the incident angle change which is caused by the refractive index change ⁇ obtained in step S2 is calculated, and based on that, Then, a detection error amount Ad of the focus position by the first detection light L1 is obtained. Then, based on the detection error amount ⁇ ⁇ , the focus position ⁇ of the substrate ⁇ surface detected using the first detection light L 1 is corrected, and the actual focus position (surface position information of the substrate ⁇ surface) is corrected. ) (Step S3). Then, the control unit CONT drives the substrate stage PST based on the corrected surface position information of the substrate P so that the surface of the substrate P obtained by the correction coincides with the image plane, and thereby drives the image plane.
  • the positional relationship between the substrate and the surface S of the substrate P is adjusted (step S4).
  • the thickness d of the liquid 50 is 1 mm has been described, but the above-described relationship corresponding to a plurality of thicknesses d is stored in the control device CONT in advance.
  • the liquid 50 is pure water, but the above-described relationship according to the liquid to be used is stored in advance.
  • the detection sensitivity and the detection resolution are higher when the incident angle is larger, it is better to use the second detection light L2 as the main detection light and use the first detection light L1 as the detection light for the camera. desirable.
  • the incident angle of 0 the difference between the incident angle 0 2 it is desirable as large as possible.
  • the incident angle with respect to the surface S of the substrate P decreases, the position detection accuracy of the substrate P in the Z-axis direction decreases. Therefore, it is preferable that the incident angles of the detection lights L1 and L2 with respect to the substrate P surface satisfy the condition of 30 ° ⁇ 0 ⁇ 90 °, respectively.
  • the incident angles of the detection lights L1 and L2 with respect to the surface of the substrate P are respectively 70 ° 0 ⁇ 90 °.
  • the condition is satisfied. That is, as shown in the graph of FIG. 4, if the incident angle is 70 ° or more, the error amount is large ⁇ changes with respect to the change in the incident angle, so that the temperature change of the liquid 50 (the refractive index change) ) Can be detected sensitively.
  • the detection light when the surface position of the surface of the substrate P is detected via the liquid (water), the detection light is emitted, and the refractive index of the liquid (water) with respect to L 1 and the surface of the substrate P are detected.
  • the difference from the refractive index of the photosensitive material (resist) becomes small, and the irradiated detection light may not be sufficiently reflected on the surface of the photosensitive material, and the light amount (light intensity) of the light received by the light receiving sensor may decrease.
  • the controller CONT illuminates the mask M with the exposure light EL, and transfers the pattern of the mask M to the substrate P via the projection optical system PL. .
  • the controller CONT does not generate an error in the image of the pattern transferred to the substrate P based on the refractive index change amount (or temperature change amount) of the liquid 50 obtained using the AF detection device 100.
  • the image of the pattern is adjusted using the imaging characteristic adjustment device PLC.
  • the image plane position of the projection optical system PL shifts in the Z-axis direction.
  • the pattern passing through the projection optical system PL and the liquid 50 is adjusted.
  • the mask M is similarly moved in the Z-axis direction or the tilt J direction.
  • the projection optical system PL drive some optical elements in the projection optical system PL, or adjust the wavelength of the exposure light EL to change the refractive index (temperature change) of the liquid 50. Is adjusted so that no error occurs in the image.
  • the refractive index on the optical path of the detection light changes, by projecting the two detection lights L 1 and L 2 onto the surface S of the substrate P at different incident angles 0 ⁇ 0 2 , Based on each detection light 1 and L 2, it is possible to determine the refractive index of the liquid existing on the optical path of the detection light using the measurement error of the surface position information. Therefore, the detected surface position information can be corrected based on the obtained refractive index information, so that the surface position information of the surface S of the substrate P can be detected with high accuracy.
  • the refractive index of the liquid 50 is set to simplify the description.
  • substrate ⁇ moves in the ⁇ -axis direction without any change (temperature change)
  • reflected light L 1 r is received.
  • the amount of displacement of the reflected light L 2 r in the direction perpendicular to the optical axis of the light receiving system is the same as the amount of displacement in the direction perpendicular to the optical axis of the system, but strictly speaking, the two detection light L 1 since the incident angle theta ,, theta 2 of L 2 are different, in the absence of refractive index change (temperature change) in the liquid 50, when the substrate ⁇ is moved in ⁇ axially receiving the reflected light was 1 r
  • the amount of deviation in the direction perpendicular to the optical axis of the system and the amount of reflected light are different from the amount of deviation of 2r in the direction perpendicular to the optical axis of the light-receiving system (however, the ratio of the deviations si ⁇ ⁇ / sin 0 2 is constant ).
  • the amount of deviation of the reflected light L 1 r in the direction perpendicular to the optical axis of the light receiving system due to the amount of deviation of the substrate P in the Z direction and the amount of deviation of the reflected light L 2 r perpendicular to the optical axis of the light receiving system The relationship with the amount of deviation in the appropriate direction (for example, si ⁇ ⁇ ⁇ / sin ⁇ 2 ) is determined in advance, and if the measurement result based on the actual reflected light is different from the relationship determined in advance, the liquid It is sufficient to judge that a temperature change (refractive index change) of 50 has occurred. As described above, pure water is used as the liquid 50 in the present embodiment.
  • Pure water has the advantage that it can be easily obtained in large quantities at a semiconductor manufacturing plant or the like, and that it has no adverse effect on the photoresist on the substrate P, optical elements (lenses), and the like.
  • pure water has no adverse effect on the environment and has an extremely low impurity content, so it is expected to have the effect of cleaning the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. can c Then, the refractive index n is almost 1 in pure water (water) wavelength with respect to the exposure light EL of about 1 93 nm. 44 ⁇ 1.
  • the wavelength is shortened to 1 / n on the substrate P, that is, about 131-134 nm, and high resolution is obtained. Furthermore, since the depth of focus is expanded to about n times, that is, about 1.44-1.47 times as compared to that in the air, if it is sufficient to secure the same depth of focus as when using it in the air, However, the numerical aperture of the projection optical system PL can be further increased, and the resolution is improved in this respect as well.
  • a plane-parallel plate capable of transmitting the exposure light EL is provided on the distal end surface 7 of the projection optical system PL as described above.
  • This plane-parallel plate is detachably (exchangeably) attached to the front end face of the projection optical system PL.
  • the optical element in contact with the liquid 50 By using a plane-parallel plate that is cheaper than the lens, the transmittance of the projection optical system PL, the illuminance of the exposure light EL on the substrate P, and the uniformity of the illuminance distribution during transportation, assembly, and adjustment of the exposure apparatus EX Even if a substance to be reduced (for example, a silicon-based organic substance) adheres to the plane-parallel plate, it is sufficient to replace the plane-parallel plate just before supplying the liquid 50, and to replace the optical element that comes into contact with the liquid 50. There is an advantage that the replacement cost is lower than when a lens is used.
  • a substance to be reduced for example, a silicon-based organic substance
  • the surface of the optical element that comes into contact with the liquid 50 is contaminated due to scattered particles generated from the registry by exposure to the exposure light EL, or the adhesion of impurities in the liquid 50.
  • this optical element By replacing this optical element with an inexpensive plane-parallel plate, the cost of replacement parts and the time required for replacement can be reduced as compared with a lens, and maintenance costs can be reduced. (Running cost) and a decrease in throughput can be suppressed.
  • a lens may be used as the optical element attached to the front end surface of the projection optical system PL.
  • the optical element attached to the front end surface of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL, for example, aberrations (spherical aberration, coma aberration, etc.).
  • the optical elements parallel plane plates and lenses
  • the optical elements are brought into contact with the liquid 50 and the lens barrel PK is not contacted, so that the metal lens barrel PK can be used. Corrosion and the like are prevented. If the pressure between the optical element at the tip of the projection optical system PL and the substrate P caused by the flow of the liquid 50 is large, the optical element is not replaced by the optical element, but the optical element is changed by the pressure. You may fix firmly so that it may not move.
  • two detection light is 1, L 2 at different incident angles 0 2, the number of detection light projected at different angles of incidence from each other Can project not only two light beams but also any three or more light beams.
  • the detection lights L1 and L2 When passing the detection lights L1 and L2 through a part of the projection optical system, only one of the plurality of optical elements constituting the projection optical system PL that is closest to the substrate P passes through. Alternatively, a plurality of optical elements may be passed.
  • the space between the front end surface 7 of the projection optical system PL and the surface S of the substrate P is filled with the liquid 50, for example, from the plane parallel to the surface S of the substrate P.
  • a configuration in which the liquid 50 is filled with a cover glass attached may be used.
  • the detection lights L 1 and L 2 from the light transmitting system 8 are transmitted to the surface S of the substrate P via a cover glass as a light transmitting member in addition to a part of the projection optical system PL and the liquid 50. It will be projected.
  • the case where the space 50 between the front end surface 7 of the projection optical system PL and the surface S of the substrate P is filled with the liquid 50 has been described as an example.
  • the present invention can of course be applied to a case where the liquid 50 is not present and the space 56 is filled with a gas such as air.
  • the refractive index information of the gas in the space 56 can be detected based on the detection light projected on the surface S of the substrate P at a plurality of different incident angles. Then, based on this detection light, it is possible to detect a temperature change of the gas in the space 56.
  • substances other than the liquid (water) 50 and air may exist on the optical path of the detection light including the space 56.
  • an optical element glass, lens
  • PFPE perfluorinated polyether
  • the present invention can be used for a method of measuring a change in temperature of a fluid such as a gas or a liquid having light transmittance and a solid. it can.
  • the method of the present invention is effective in a small area where temperature measurement is difficult with a normal temperature sensor, a high-temperature atmosphere, a high-pressure atmosphere, an atmosphere having high corrosiveness, and the like.
  • the detection light beams L1 and L2 pass through the projection optical system PL, but the refractive index of the projection optical system PL also slightly changes with a change in temperature.
  • the error amount based on each of the plurality of detected light beams having different incident angles is obtained, so that the projection optical system P Temperature change (refractive index change) can be obtained.
  • the same or equivalent components as those in the first embodiment described with reference to FIG. 2 are denoted by the same reference numerals, and the description thereof will be simplified or omitted.
  • the light transmission system 8 is provided with a wavelength selection filter 24.
  • the light transmission system 8 includes a light source 10, a wavelength selection filter 24 provided downstream of the light path of the light beam emitted from the light source 10, a light transmission slit 11, and a cylindrical lens for astigmatism correction. 12, a relay lens 13, an optical path bending mirror 14, an aberration correction plane plate 15, and an objective lens 16.
  • the light receiving system 9 includes an objective lens 17 to which the reflected light from the projection optical system PL enters, a plane plate 18 for correcting aberration, a vibration mirror 19 that vibrates at a predetermined cycle, and a relay lens. 20, a cylindrical lens 21 for astigmatism correction, a dichroic mirror 26, a light receiving slit 22a, 22b having a slit-shaped opening, for example, silicon.
  • a light receiving sensor 23a, 23b made of a die is provided.
  • the wavelength selection filter 24 can set the wavelength of the detection light projected on the liquid 50 and the substrate P. That is, the light transmission system 8 can project a plurality of detection lights having different wavelengths onto the surface S of the substrate P by the wavelength selection filter 24.
  • a first detection light L 1 having a first wavelength and a second detection light L 2 having a second wavelength different from the first wavelength enter the liquid 50 from the projection optical system PL.
  • Angle of refraction is different. Therefore, the angles of incidence of the first and second detection lights L1 and L2 having different wavelengths from each other when they pass through the respective liquids 50 and are projected onto the substrate P are different from each other.
  • the liquid 50 is water
  • a C line (wavelength 656.3 ⁇ m) is projected as the first detection light L 1
  • a d line (wavelength 587.6) is used as the second detection light L 2.
  • nm is projected.
  • the incident angle of the d-line to the surface S of the substrate P is 80 degrees, The difference between the d-line and the C-line with respect to the surface S of the substrate P is 0.14 degrees.
  • the light reflected on the surface of the substrate P is referred to as “1”, and “2r” is incident on the light receiving system 9 respectively.
  • the reflected light L 1 r transmitted through the dichroic mirror 26 in the light receiving system 9 is the light receiving sensor 2 3
  • the incident light is incident on a and reflected by the dichroic mirror 26.
  • the reflected light 2r is incident on the light receiving sensor 23.
  • the detection results of the light receiving sensors 23a and 23b are output to the control device CONT.
  • FIG. 1 illustrating a third embodiment of the AF detection device 1 0 0
  • one light-sending system 8 and one light-receiving system 9 are provided, respectively, and a feature of the present embodiment is that the light-sending system 8 is provided with a pupil splitting plate 25.
  • the light transmission system 8 includes a light source 10, a light transmission slit 11, a cylindrical lens 12 for astigmatism correction, a relay lens 13, an optical path bending mirror 14, and an aberration correction It comprises a plane plate 15, an objective lens 16, and a pupil splitting plate 25 provided near the downstream side of the optical path of the objective lens 16.
  • the light receiving system 9 is a light reflected via the projection optical system PL.
  • the pupil splitting plate 25 has a predetermined opening 25 A, and a part of the light beam applied to the pupil splitting plate 25 is formed by the opening 25 A. That is, as shown in FIGS. 8 (a) and 8 (b), the pupil splitting plate 25 is moved in the direction perpendicular to the optical axis of the light transmission system to split the luminous flux.
  • the refractive index information of the liquid 50 can be obtained as in the first embodiment. Also, by alternately repeating the states shown in FIGS. 8 (a) and 8 (b), (the refractive index information of the liquid 50 can be obtained in real time.
  • the split plate 25 similarly to the second embodiment, even with one light transmission system 8 and one light reception system 9, a plurality of detection lights can be projected onto the substrate P at different incident angles.
  • a pupil splitting plate may be provided between the substrate P of the light receiving system 9 and the objective lens 17 to prevent disturbance such as stray light.
  • the relationship between the optimal image plane of the pattern image and the surface S of the substrate P can be adjusted, Adjustment of the pattern image projected on the substrate P, but based on the detected temperature information
  • the temperature of the liquid supplied from the liquid supply device 1 may be controlled, whereby the temperature (refractive index) of the liquid 50 between the projection optical system PL and the substrate P can be optimized.
  • the detection light is projected on the surface of the substrate P as the surface to be detected, but is not limited to the surface of the substrate P, and may be formed on, for example, a substrate stage PST.
  • the detection light may be projected using the reference plane or the upper surface of the sensor as a surface to be detected,
  • the detection light is detected near the center of the projection area where the image of the pattern of the mask M is projected.
  • the detection light may be projected outside the projection area
  • the AF detection device 100 receives the two detection lights.
  • the substrate P in the above embodiment is not limited to a semiconductor wafer for manufacturing a semiconductor device, but may be a glass substrate for a display device, a ceramic wafer for a thin-film magnetic head, or a mask or reticle used in an exposure apparatus. Of the original (Eng synthetic stone, silicon wafer) etc. are applied.
  • the exposure apparatus EX in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by synchronously moving the mask M and the substrate P, the mask M and the substrate P It can also be applied to a step-and-repetition type projection exposure apparatus (stepper) in which the pattern of the mask M is exposed collectively while the substrate is stationary, and the substrate P is sequentially moved stepwise.
  • stepper step-and-repetition type projection exposure apparatus in which the pattern of the mask M is exposed collectively while the substrate is stationary, and the substrate P is sequentially moved stepwise.
  • the present invention can also be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on a substrate P.
  • the present invention is also applicable to a twin-stage type exposure apparatus.
  • the stage holding the substrate to be exposed is moved in the liquid tank.
  • the present invention is also applicable to an immersion exposure apparatus for forming a liquid tank having a predetermined depth on a stage and holding a substrate therein.
  • a liquid tank having a predetermined depth is formed on a stage in Japanese Unexamined Patent Application Publication No. 6-124873.
  • a liquid immersion exposure apparatus that holds a substrate therein is disclosed in, for example, Japanese Patent Laid-Open No. W
  • the type of exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element to the substrate P, but may be an exposure apparatus for manufacturing a liquid crystal display element or a display, or a thin film. It can be widely applied to magnetic heads, imaging devices (CCD) or exposure equipment for manufacturing reticles or masks.
  • CCD imaging devices
  • any of an air levitation type using air bearing and a magnetic levitation type using Lorentz force or reactance force may be used.
  • each of the stages PST and MST may be of a type that moves along a guide or a guideless type that does not have a guide.
  • Examples of using linear motors for the stages are disclosed in U.S. Patent Nos. 5,623,853 and 5,528,118, each of which is permitted by the laws of the country designated or selected in this international application. At this point, the contents of these documents will be incorporated as part of the description in this document.
  • the drive mechanism for each of the stages PST and MST is as follows: a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil are opposed to each other, and each stage PST, MST is driven by electromagnetic force. May be used.
  • one of the magnet unit and the armature unit is connected to the stages PST and MST, and the other of the magnet unit and the armature unit is provided on the moving surface side of the stages PST and MS.
  • the reaction force generated by the movement of the substrate stage PS ⁇ may be mechanically released to the floor (ground) using a frame member so as not to be transmitted to the projection optical system PL.
  • the method of handling this reaction force is disclosed in detail in, for example, US Pat. No. 5,528,118 (Japanese Patent Application Laid-Open No. 8-166475), and the laws and regulations of the country designated or selected in this international application are described. Forgive To the extent permitted, the content of this document is incorporated herein by reference.
  • the reaction force generated by the movement of the mask stage MST may be mechanically released to the floor (ground) using a frame member so as not to be transmitted to the projection optical system PL.
  • the method of handling this reaction force is disclosed in detail in, for example, U.S. Pat. No. 5,874,820 (Japanese Patent Application Laid-Open No. H8-330224). To the extent permitted by the laws of the selected country, the disclosure of this document is incorporated by reference into this text.
  • the exposure apparatus EX of the embodiment of the present invention controls various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling.
  • the process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustments are made to ensure various precisions of the entire exposure apparatus. It is desirable that the exposure apparatus be manufactured in a clean room in which the temperature, the degree of cleanliness, and the like are controlled. As shown in Fig.
  • a micro device such as a semiconductor device has a step 201 for designing the function and performance of the micro device, a step 202 for fabricating a mask (reticle) based on this design step, and a Step 203 for manufacturing a substrate as a base material, Step 204 for exposing a mask pattern to the substrate using the exposure apparatus EX of the above-described embodiment, Step for assembling a device (dicing step, bonding step, package It is manufactured through 205, inspection steps 206, etc.
  • the refractive index on the optical path of the detection light changes, multiple light beams are projected as detection light at different incident angles to the surface to be detected, and based on each of these detection lights, the ⁇ surface position Since each piece of information shows a different measurement error, the refractive index information on the optical path can be obtained based on the difference between these measurement errors. Therefore, since the detected surface position information can be corrected by the obtained refractive index information, the surface position information of the test surface can be obtained with high accuracy.

Abstract

L'invention concerne un appareil de détection de position de surface (100) comprenant un système de transmission de lumière (8) destiné à projeter une lumière de détection sur une surface (S) à détecter, ainsi qu'un système de réception de lumière (9) destiné à recevoir une lumière de réflexion en provenance de la surface (S) à détecter, les informations de position de surface de la surface (S) à détecter étant détectées sur la base d'informations obtenues à partir du système de réception de lumière (9). Une pluralité de lumières (L1, L2) utilisées comme lumières de détection sont projetées sur la surface (S) à détecter à différents angles incidents (υ1, υ2). Les informations de position de surface peuvent être corrigées sur la base des lumières de réflexion provenant des lumières (L1, L2) même lorsque l'indice de réfraction d'un milieu sur la surface (S) varie avec un changement de température. Cet appareil de détection de position de surface (100) est utile pour un système d'exposition en immersion.
PCT/JP2003/015736 2002-12-10 2003-12-09 Appareil de detection de position de surface, procede d'exposition et procede de fabrication d'un dispositif WO2004053957A1 (fr)

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AU2003289272A AU2003289272A1 (en) 2002-12-10 2003-12-09 Surface position detection apparatus, exposure method, and device porducing method

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JP2002-357955 2002-12-10
JP2002357955 2002-12-10
JP2003-072485 2003-03-17
JP2003072485 2003-03-17

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