WO2004055920A3 - Electronic devices - Google Patents
Electronic devices Download PDFInfo
- Publication number
- WO2004055920A3 WO2004055920A3 PCT/GB2003/005435 GB0305435W WO2004055920A3 WO 2004055920 A3 WO2004055920 A3 WO 2004055920A3 GB 0305435 W GB0305435 W GB 0305435W WO 2004055920 A3 WO2004055920 A3 WO 2004055920A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- topographic profile
- planarizing
- electronic devices
- depositing
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/887—Nanoimprint lithography, i.e. nanostamp
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2003801094311A CN1745487B (en) | 2002-12-14 | 2003-12-12 | Method for forming electronic devices in multi-layer structure of substrate |
US10/538,870 US7482207B2 (en) | 2002-12-14 | 2003-12-12 | Electronic devices |
KR1020057010905A KR101062030B1 (en) | 2002-12-14 | 2003-12-12 | Method for manufacturing electronic device of multi-layer structure |
EP03767995.8A EP1581974B1 (en) | 2002-12-14 | 2003-12-12 | Electronic devices |
AU2003292417A AU2003292417A1 (en) | 2002-12-14 | 2003-12-12 | Electronic devices |
JP2004559888A JP5079980B2 (en) | 2002-12-14 | 2003-12-12 | Method for forming electronic device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0229191.2 | 2002-12-14 | ||
GBGB0229191.2A GB0229191D0 (en) | 2002-12-14 | 2002-12-14 | Embossing of polymer devices |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004055920A2 WO2004055920A2 (en) | 2004-07-01 |
WO2004055920A3 true WO2004055920A3 (en) | 2004-10-07 |
Family
ID=9949692
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2003/005430 WO2004055919A2 (en) | 2002-12-14 | 2003-12-12 | Electronic devices |
PCT/GB2003/005435 WO2004055920A2 (en) | 2002-12-14 | 2003-12-12 | Electronic devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2003/005430 WO2004055919A2 (en) | 2002-12-14 | 2003-12-12 | Electronic devices |
Country Status (8)
Country | Link |
---|---|
US (4) | US7482207B2 (en) |
EP (5) | EP2312662B1 (en) |
JP (1) | JP5079980B2 (en) |
KR (1) | KR101062030B1 (en) |
CN (1) | CN1745487B (en) |
AU (2) | AU2003292417A1 (en) |
GB (1) | GB0229191D0 (en) |
WO (2) | WO2004055919A2 (en) |
Families Citing this family (165)
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GB0229191D0 (en) * | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
JP4344270B2 (en) * | 2003-05-30 | 2009-10-14 | セイコーエプソン株式会社 | Manufacturing method of liquid crystal display device |
FI20030919A (en) * | 2003-06-19 | 2004-12-20 | Avantone Oy | Method and apparatus for manufacturing an electronic thin film component and the electronic thin film component |
US7923109B2 (en) * | 2004-01-05 | 2011-04-12 | Board Of Regents, The University Of Texas System | Inorganic nanowires |
US8148251B2 (en) * | 2004-01-30 | 2012-04-03 | Hewlett-Packard Development Company, L.P. | Forming a semiconductor device |
JP2006019672A (en) * | 2004-06-02 | 2006-01-19 | Seiko Epson Corp | Method of manufacturing transistor, electro-optical device, and electronic device |
JP2006024535A (en) * | 2004-07-09 | 2006-01-26 | Seiko Epson Corp | Manufacturing method for organic thin-film element, manufacturing method for electro-optic device, and manufacturing method for electronic apparatus |
JP4575725B2 (en) * | 2004-08-20 | 2010-11-04 | 株式会社リコー | Electronic device and manufacturing method thereof |
JP4112597B2 (en) * | 2004-09-30 | 2008-07-02 | 独立行政法人科学技術振興機構 | Self-organizing material patterning method, self-organizing material patterning substrate and production method thereof, and photomask using self-organizing material patterning substrate |
US7160583B2 (en) * | 2004-12-03 | 2007-01-09 | 3M Innovative Properties Company | Microfabrication using patterned topography and self-assembled monolayers |
KR20060064318A (en) * | 2004-12-08 | 2006-06-13 | 삼성에스디아이 주식회사 | Method for fabricating conductive pattern, tft and fabrication method thereof using the same |
EP1670079B1 (en) * | 2004-12-08 | 2010-12-01 | Samsung Mobile Display Co., Ltd. | Method of forming a conductive pattern of a thin film transistor |
GB0427563D0 (en) * | 2004-12-16 | 2005-01-19 | Plastic Logic Ltd | A method of semiconductor patterning |
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JP2006269599A (en) * | 2005-03-23 | 2006-10-05 | Sony Corp | Pattern forming method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board |
DE102005022000B8 (en) * | 2005-05-09 | 2010-08-12 | O-Flexx Technologies Gmbh | Process for the preparation of electronic units from two multilayer starting structures and their use |
US7452746B1 (en) * | 2005-05-16 | 2008-11-18 | The Uniteed States Of America As Represented By The Director Of National Security Agency | Method of fabricating a flexible organic integrated circuit |
KR100647695B1 (en) | 2005-05-27 | 2006-11-23 | 삼성에스디아이 주식회사 | Otft and fabrication method thereof and flat panel display device with the same |
GB2427509A (en) | 2005-06-21 | 2006-12-27 | Seiko Epson Corp | Organic electronic device fabrication by micro-embossing |
KR101264673B1 (en) * | 2005-06-24 | 2013-05-20 | 엘지디스플레이 주식회사 | method for fabricating detail pattern by using soft mold |
DE102005033756A1 (en) * | 2005-07-15 | 2007-01-18 | O-Flex Technologies Gmbh | Production of an electronic component, especially for thin film transistors presses two multilayer structures together that include a cutter for carrier release |
JP2007027589A (en) * | 2005-07-20 | 2007-02-01 | Seiko Epson Corp | Method of forming film pattern, device, electrooptical apparatus, and electronic equipment |
JP4506605B2 (en) * | 2005-07-28 | 2010-07-21 | ソニー株式会社 | Manufacturing method of semiconductor device |
US7871670B2 (en) * | 2005-08-10 | 2011-01-18 | 3M Innovative Properties Company | Microfabrication using replicated patterned topography and self-assembled monolayers |
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- 2003-12-12 EP EP11153370.9A patent/EP2312662B1/en not_active Expired - Lifetime
- 2003-12-12 AU AU2003292417A patent/AU2003292417A1/en not_active Abandoned
- 2003-12-12 EP EP03767991.7A patent/EP1581973B1/en not_active Expired - Lifetime
- 2003-12-12 CN CN2003801094311A patent/CN1745487B/en not_active Expired - Fee Related
- 2003-12-12 WO PCT/GB2003/005435 patent/WO2004055920A2/en active Application Filing
- 2003-12-12 EP EP11153372.5A patent/EP2312664B1/en not_active Expired - Lifetime
- 2003-12-12 KR KR1020057010905A patent/KR101062030B1/en active IP Right Grant
- 2003-12-12 AU AU2003292414A patent/AU2003292414A1/en not_active Abandoned
- 2003-12-12 EP EP11153375.8A patent/EP2323190B1/en not_active Expired - Lifetime
- 2003-12-12 JP JP2004559888A patent/JP5079980B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN1745487A (en) | 2006-03-08 |
US7935565B2 (en) | 2011-05-03 |
EP2323190A3 (en) | 2011-06-29 |
EP2312662A1 (en) | 2011-04-20 |
US20060160276A1 (en) | 2006-07-20 |
EP2323190A2 (en) | 2011-05-18 |
AU2003292414A1 (en) | 2004-07-09 |
WO2004055920A2 (en) | 2004-07-01 |
CN1745487B (en) | 2010-06-09 |
EP2312664A2 (en) | 2011-04-20 |
EP1581974B1 (en) | 2017-02-01 |
US7482207B2 (en) | 2009-01-27 |
US20130260058A1 (en) | 2013-10-03 |
WO2004055919A3 (en) | 2005-03-24 |
AU2003292417A1 (en) | 2004-07-09 |
WO2004055919A2 (en) | 2004-07-01 |
EP1581974A2 (en) | 2005-10-05 |
US20060148167A1 (en) | 2006-07-06 |
EP2323190B1 (en) | 2019-11-27 |
JP5079980B2 (en) | 2012-11-21 |
AU2003292417A8 (en) | 2004-07-09 |
EP2312664A3 (en) | 2011-06-29 |
JP2006510210A (en) | 2006-03-23 |
EP1581973A2 (en) | 2005-10-05 |
GB0229191D0 (en) | 2003-01-22 |
US20110207300A1 (en) | 2011-08-25 |
AU2003292414A8 (en) | 2004-07-09 |
EP2312664B1 (en) | 2013-08-07 |
KR101062030B1 (en) | 2011-09-05 |
KR20050089826A (en) | 2005-09-08 |
EP1581973B1 (en) | 2017-08-02 |
EP2312662B1 (en) | 2014-11-19 |
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