WO2004056698A3 - Procede de realisation d'une micro-structure suspendue plane, utilisant une couche sacrificielle en materiau polymere et composant obtenu - Google Patents

Procede de realisation d'une micro-structure suspendue plane, utilisant une couche sacrificielle en materiau polymere et composant obtenu Download PDF

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Publication number
WO2004056698A3
WO2004056698A3 PCT/FR2003/003789 FR0303789W WO2004056698A3 WO 2004056698 A3 WO2004056698 A3 WO 2004056698A3 FR 0303789 W FR0303789 W FR 0303789W WO 2004056698 A3 WO2004056698 A3 WO 2004056698A3
Authority
WO
WIPO (PCT)
Prior art keywords
sacrificial layer
layer
polymer material
making
resulting component
Prior art date
Application number
PCT/FR2003/003789
Other languages
English (en)
Other versions
WO2004056698A2 (fr
Inventor
Philippe Robert
France Michel
Catherine Maeder-Pachurka
Nicolas Sillon
Original Assignee
Commissariat Energie Atomique
Philippe Robert
France Michel
Catherine Maeder-Pachurka
Nicolas Sillon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Philippe Robert, France Michel, Catherine Maeder-Pachurka, Nicolas Sillon filed Critical Commissariat Energie Atomique
Priority to AU2003299341A priority Critical patent/AU2003299341A1/en
Priority to EP03799623A priority patent/EP1572578A2/fr
Priority to US10/536,890 priority patent/US20060138076A1/en
Publication of WO2004056698A2 publication Critical patent/WO2004056698A2/fr
Publication of WO2004056698A3 publication Critical patent/WO2004056698A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0125—Blanket removal, e.g. polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

Le procédé comporte successivement un dépôt d'une couche sacrificielle (2) en matériau polymère, un dépôt, sur au moins une partie du substrat (1) et de la face avant de la couche sacrificielle (2), d'une couche d'encastrement (6), dont l'épaisseur est supérieure à celle de la couche sacrificielle (2) et une planarisation de manière à ce que les faces avant de la couche sacrificielle (2) et de la couche d'encastrement (6) forment une surface plane commune. Une couche de formation (3) d'une structure suspendue (5) est déposée sur la face avant de la surface plane commune. La planarisation peut comporter un polissage mécano-chimique et une gravure de la couche d'encastrement (6). Une gravure de la couche sacrificielle (2) peut être réalisée au moyen d'un masque, formé sur la face avant d'une couche en matériau polymère, éliminé au cours de l'étape de planarisation.
PCT/FR2003/003789 2001-02-27 2003-12-18 Procede de realisation d'une micro-structure suspendue plane, utilisant une couche sacrificielle en materiau polymere et composant obtenu WO2004056698A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003299341A AU2003299341A1 (en) 2002-12-18 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component
EP03799623A EP1572578A2 (fr) 2002-12-18 2003-12-18 Procede de realisation d une micro-structure suspendue plane , utilisant une couche sacrificielle en materiau polymere et composant obtenu
US10/536,890 US20060138076A1 (en) 2001-02-27 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0216088A FR2849016B1 (fr) 2002-12-18 2002-12-18 Procede de realisation d'une micro-structure suspendue plane, utilisant une couche sacrificielle en materiau polymere et composant obtenu
FR02/16088 2002-12-18

Publications (2)

Publication Number Publication Date
WO2004056698A2 WO2004056698A2 (fr) 2004-07-08
WO2004056698A3 true WO2004056698A3 (fr) 2004-11-11

Family

ID=32406154

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/003789 WO2004056698A2 (fr) 2001-02-27 2003-12-18 Procede de realisation d'une micro-structure suspendue plane, utilisant une couche sacrificielle en materiau polymere et composant obtenu

Country Status (4)

Country Link
EP (1) EP1572578A2 (fr)
AU (1) AU2003299341A1 (fr)
FR (1) FR2849016B1 (fr)
WO (1) WO2004056698A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2874213B1 (fr) * 2004-08-13 2007-03-02 Commissariat Energie Atomique Dispositif comprenant un microsysteme encapsule et procede de fabrication
US7264984B2 (en) 2004-12-21 2007-09-04 Touchdown Technologies, Inc. Process for forming MEMS
US7271022B2 (en) * 2004-12-21 2007-09-18 Touchdown Technologies, Inc. Process for forming microstructures
US7362119B2 (en) 2005-08-01 2008-04-22 Touchdown Technologies, Inc Torsion spring probe contactor design
US7245135B2 (en) 2005-08-01 2007-07-17 Touchdown Technologies, Inc. Post and tip design for a probe contact
US7365553B2 (en) 2005-12-22 2008-04-29 Touchdown Technologies, Inc. Probe card assembly
US7180316B1 (en) 2006-02-03 2007-02-20 Touchdown Technologies, Inc. Probe head with machined mounting pads and method of forming same
GB2588891B (en) * 2019-10-23 2024-04-24 Smart Photonics Holding B V Manufacturing a semiconductor structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430421A (en) * 1992-12-15 1995-07-04 Asulab S.A. Reed contactor and process of fabricating suspended tridimensional metallic microstructure
US5582678A (en) * 1986-10-20 1996-12-10 Canon Kabushiki Kaisha Process for producing ink jet recording head
WO2000033089A2 (fr) * 1998-12-02 2000-06-08 Formfactor, Inc. Elements de contact lithographiques
US20020047172A1 (en) * 2000-08-23 2002-04-25 Reid Jason S. Transition metal dielectric alloy materials for MEMS
WO2002068321A2 (fr) * 2001-02-27 2002-09-06 Formfactor, Inc. Outil de forme pour la realisation d'un moule a ressort micro-electronique profile

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1064135C (zh) 1994-04-30 2001-04-04 大宇电子株式会社 薄膜可驱动反射镜阵列

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582678A (en) * 1986-10-20 1996-12-10 Canon Kabushiki Kaisha Process for producing ink jet recording head
US5430421A (en) * 1992-12-15 1995-07-04 Asulab S.A. Reed contactor and process of fabricating suspended tridimensional metallic microstructure
WO2000033089A2 (fr) * 1998-12-02 2000-06-08 Formfactor, Inc. Elements de contact lithographiques
US20020047172A1 (en) * 2000-08-23 2002-04-25 Reid Jason S. Transition metal dielectric alloy materials for MEMS
WO2002068321A2 (fr) * 2001-02-27 2002-09-06 Formfactor, Inc. Outil de forme pour la realisation d'un moule a ressort micro-electronique profile

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of EP1572578A2 *
SONG H ET AL: "Wafer level vacuum packaged de-coupled vertical gyroscope by a new fabrication process", PROCEDINGS OF THE IEEE 13TH. ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS. MEMS 2000. MIYAZAKI, JAPAN, JAN. 23-27, 2000, 23 January 2000 (2000-01-23), pages 520 - 524, XP010377181 *

Also Published As

Publication number Publication date
WO2004056698A2 (fr) 2004-07-08
FR2849016B1 (fr) 2005-06-10
AU2003299341A1 (en) 2004-07-14
EP1572578A2 (fr) 2005-09-14
FR2849016A1 (fr) 2004-06-25

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