WO2004062074A3 - High voltage ripple reduction and substrate protection - Google Patents

High voltage ripple reduction and substrate protection Download PDF

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Publication number
WO2004062074A3
WO2004062074A3 PCT/US2003/039772 US0339772W WO2004062074A3 WO 2004062074 A3 WO2004062074 A3 WO 2004062074A3 US 0339772 W US0339772 W US 0339772W WO 2004062074 A3 WO2004062074 A3 WO 2004062074A3
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
charge
maintain
changing
load
Prior art date
Application number
PCT/US2003/039772
Other languages
French (fr)
Other versions
WO2004062074A2 (en
Inventor
Feng Pan
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Priority to EP03797012A priority Critical patent/EP1576717A2/en
Priority to AU2003297939A priority patent/AU2003297939A1/en
Priority to JP2004565457A priority patent/JP2006512887A/en
Publication of WO2004062074A2 publication Critical patent/WO2004062074A2/en
Publication of WO2004062074A3 publication Critical patent/WO2004062074A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0032—Control circuits allowing low power mode operation, e.g. in standby mode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

In a non-volatile memory, charge pumps are used to provide high voltages needed for programming memory cells that have floating gate structures. Charge pumps have a series of voltage multiplier stages in series to boost voltage. These charge pumps must rapidly charge a load to a high voltage and then maintain a voltage with a high degree of stability. Techniques for achieving both of these goals are presented. In one aspect, a charge pump has two operating states, one to charge a load rapidly and a second to maintain a voltage on a charged load with high stability. These states are achieved by changing the current output from a high current during charging to a low current to maintain the voltage. This is done by changing the capacitance used in the individual voltage multiplier stages. In another aspect, two different current levels are produced by changing the voltage used to charge the capacitors of the voltage multiplier stages.
PCT/US2003/039772 2002-12-23 2003-12-11 High voltage ripple reduction and substrate protection WO2004062074A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03797012A EP1576717A2 (en) 2002-12-23 2003-12-11 High voltage ripple reduction and substrate protection
AU2003297939A AU2003297939A1 (en) 2002-12-23 2003-12-11 High voltage ripple reduction and substrate protection
JP2004565457A JP2006512887A (en) 2002-12-23 2003-12-11 High voltage ripple reduction and board protection

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/328,686 2002-12-23
US10/328,686 US6734718B1 (en) 2002-12-23 2002-12-23 High voltage ripple reduction

Publications (2)

Publication Number Publication Date
WO2004062074A2 WO2004062074A2 (en) 2004-07-22
WO2004062074A3 true WO2004062074A3 (en) 2004-11-04

Family

ID=32229997

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/039772 WO2004062074A2 (en) 2002-12-23 2003-12-11 High voltage ripple reduction and substrate protection

Country Status (8)

Country Link
US (2) US6734718B1 (en)
EP (1) EP1576717A2 (en)
JP (1) JP2006512887A (en)
KR (1) KR20050098843A (en)
CN (1) CN1729610A (en)
AU (1) AU2003297939A1 (en)
TW (1) TW200428743A (en)
WO (1) WO2004062074A2 (en)

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US8040175B2 (en) * 2007-10-24 2011-10-18 Cypress Semiconductor Corporation Supply regulated charge pump system
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US7586362B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Low voltage charge pump with regulation
US7586363B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Diode connected regulation of charge pumps
JP2009183111A (en) * 2008-01-31 2009-08-13 Panasonic Corp Charge pump circuit and electronic equipment equipped with same
US20090302930A1 (en) * 2008-06-09 2009-12-10 Feng Pan Charge Pump with Vt Cancellation Through Parallel Structure
US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US8710907B2 (en) * 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
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US7973592B2 (en) * 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) * 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US20110148509A1 (en) 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8605401B2 (en) * 2011-04-29 2013-12-10 Altera Corporation Systems and methods for securing a programmable device against an over-voltage attack
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
CN102522117B (en) * 2011-12-30 2015-01-07 上海复旦微电子集团股份有限公司 Memory circuit
WO2014013292A1 (en) * 2012-07-19 2014-01-23 Freescale Semiconductor, Inc. System on a chip, apparatus and method for voltage ripple reduction on a power supply line of an integrated circuit device operable in at least two modes
CN102832807B (en) * 2012-08-31 2014-07-02 电子科技大学 Current control circuit for charge pump
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
CN108418419A (en) * 2018-04-17 2018-08-17 武汉新芯集成电路制造有限公司 Charge pump
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Also Published As

Publication number Publication date
US7116155B2 (en) 2006-10-03
US6734718B1 (en) 2004-05-11
AU2003297939A1 (en) 2004-07-29
JP2006512887A (en) 2006-04-13
US20040251956A1 (en) 2004-12-16
CN1729610A (en) 2006-02-01
EP1576717A2 (en) 2005-09-21
WO2004062074A2 (en) 2004-07-22
TW200428743A (en) 2004-12-16
KR20050098843A (en) 2005-10-12
AU2003297939A8 (en) 2004-07-29

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