WO2004088620A3 - Displays with all-metal electronics - Google Patents
Displays with all-metal electronics Download PDFInfo
- Publication number
- WO2004088620A3 WO2004088620A3 PCT/US2004/009418 US2004009418W WO2004088620A3 WO 2004088620 A3 WO2004088620 A3 WO 2004088620A3 US 2004009418 W US2004009418 W US 2004009418W WO 2004088620 A3 WO2004088620 A3 WO 2004088620A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- displays
- metal electronics
- panel
- metal
- electronics
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3486—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by a magnetic field
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04758459A EP1618547A2 (en) | 2003-04-04 | 2004-03-24 | Displays with all-metal electronics |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46027703P | 2003-04-04 | 2003-04-04 | |
US60/460,277 | 2003-04-04 | ||
US10/806,895 US7005852B2 (en) | 2003-04-04 | 2004-03-22 | Displays with all-metal electronics |
US10/806,895 | 2004-03-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004088620A2 WO2004088620A2 (en) | 2004-10-14 |
WO2004088620A3 true WO2004088620A3 (en) | 2008-11-06 |
Family
ID=33101420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/009418 WO2004088620A2 (en) | 2003-04-04 | 2004-03-24 | Displays with all-metal electronics |
Country Status (3)
Country | Link |
---|---|
US (1) | US7005852B2 (en) |
EP (1) | EP1618547A2 (en) |
WO (1) | WO2004088620A2 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050269612A1 (en) * | 2004-05-11 | 2005-12-08 | Integrated Magnetoelectronics | Solid-state component based on current-induced magnetization reversal |
TWI312434B (en) * | 2005-08-19 | 2009-07-21 | Au Optronics Corporatio | A fan-out structure for a flat panel display |
US7391635B2 (en) * | 2005-11-01 | 2008-06-24 | Hewlett-Packard Development Company, L.P. | Method and apparatus for variable-resolution memory |
US8415755B2 (en) * | 2006-09-25 | 2013-04-09 | Massachusetts Institute Of Technology | Wheatstone-bridge magnetoresistive device |
US7911830B2 (en) * | 2007-05-17 | 2011-03-22 | Integrated Magnetoelectronics | Scalable nonvolatile memory |
JP4709868B2 (en) * | 2008-03-17 | 2011-06-29 | 株式会社東芝 | Semiconductor memory device |
US7893511B2 (en) * | 2008-07-17 | 2011-02-22 | Qimonda Ag | Integrated circuit, memory module, and method of manufacturing an integrated circuit |
WO2010098884A1 (en) * | 2009-02-26 | 2010-09-02 | Jian-Ping Wang | High magnetic moment particle detection |
CN102645805B (en) * | 2012-02-24 | 2014-08-20 | 北京京东方光电科技有限公司 | Array base plate, preparation method of array base plate and liquid crystal display |
KR102184269B1 (en) * | 2013-09-02 | 2020-11-30 | 삼성전자 주식회사 | Display apparatus, portable apparatus and method for displaying a screen thereof |
US9967038B2 (en) * | 2014-05-16 | 2018-05-08 | Regents Of The University Of Minnesota | Optical interconnect in spin-based computation and communication systems |
US9741923B2 (en) | 2015-09-25 | 2017-08-22 | Integrated Magnetoelectronics Corporation | SpinRAM |
US10762940B2 (en) | 2016-12-09 | 2020-09-01 | Integrated Magnetoelectronics Corporation | Narrow etched gaps or features in multi-period thin-film structures |
US9997239B1 (en) | 2017-05-02 | 2018-06-12 | Everspin Technologies, Inc. | Word line overdrive in memory and method therefor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5515314A (en) * | 1994-05-27 | 1996-05-07 | Fujitsu Limited | Storage device |
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US5051695A (en) | 1984-06-25 | 1991-09-24 | The United States Of Americas As Represented By The Secretary Of The Navy | Thin film vector magnetometer |
US4780848A (en) | 1986-06-03 | 1988-10-25 | Honeywell Inc. | Magnetoresistive memory with multi-layer storage cells having layers of limited thickness |
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US5173873A (en) | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
US5251170A (en) | 1991-11-04 | 1993-10-05 | Nonvolatile Electronics, Incorporated | Offset magnetoresistive memory structures |
US5420819A (en) | 1992-09-24 | 1995-05-30 | Nonvolatile Electronics, Incorporated | Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage |
JPH0766033A (en) | 1993-08-30 | 1995-03-10 | Mitsubishi Electric Corp | Magnetoresistance element, and magnetic thin film memory and magnetoresistance sensor using the magnetoresistance element |
US5477482A (en) | 1993-10-01 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Ultra high density, non-volatile ferromagnetic random access memory |
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US5477143A (en) | 1994-01-11 | 1995-12-19 | Honeywell Inc. | Sensor with magnetoresistors disposed on a plane which is parallel to and displaced from the magnetic axis of a permanent magnet |
US5650889A (en) | 1994-02-07 | 1997-07-22 | Hitachi, Ltd. | Magnetic recording medium containing heavy rare gas atoms, and a magnetic transducing system using the medium |
WO1995028649A1 (en) | 1994-04-15 | 1995-10-26 | Philips Electronics N.V. | A magnetic field sensor, an instrument comprising such a sensor and a method of manufacturing such a sensor |
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EP0685746A3 (en) | 1994-05-30 | 1996-12-04 | Sony Corp | Magneto-resistance effect device with improved thermal resistance. |
JP2901501B2 (en) | 1994-08-29 | 1999-06-07 | ティーディーケイ株式会社 | Magnetic multilayer film, method of manufacturing the same, and magnetoresistive element |
JP3442500B2 (en) | 1994-08-31 | 2003-09-02 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor circuit |
US5561368A (en) | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
US5587943A (en) | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
US5652445A (en) | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
US5654566A (en) | 1995-04-21 | 1997-08-05 | Johnson; Mark B. | Magnetic spin injected field effect transistor and method of operation |
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US5741435A (en) | 1995-08-08 | 1998-04-21 | Nano Systems, Inc. | Magnetic memory having shape anisotropic magnetic elements |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5929636A (en) | 1996-05-02 | 1999-07-27 | Integrated Magnetoelectronics | All-metal giant magnetoresistive solid-state component |
US5920500A (en) | 1996-08-23 | 1999-07-06 | Motorola, Inc. | Magnetic random access memory having stacked memory cells and fabrication method therefor |
US5852574A (en) | 1997-12-24 | 1998-12-22 | Motorola, Inc. | High density magnetoresistive random access memory device and operating method thereof |
JPH11306750A (en) | 1998-04-20 | 1999-11-05 | Univ Kyoto | Magnetic-type semiconductor integrated storage |
US5969978A (en) | 1998-09-30 | 1999-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Read/write memory architecture employing closed ring elements |
US6278594B1 (en) | 1998-10-13 | 2001-08-21 | Storage Technology Corporation | Dual element magnetoresistive read head with integral element stabilization |
US6134138A (en) | 1999-07-30 | 2000-10-17 | Honeywell Inc. | Method and apparatus for reading a magnetoresistive memory |
US6292336B1 (en) | 1999-09-30 | 2001-09-18 | Headway Technologies, Inc. | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient |
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US6483740B2 (en) | 2000-07-11 | 2002-11-19 | Integrated Magnetoelectronics Corporation | All metal giant magnetoresistive memory |
US6469927B2 (en) | 2000-07-11 | 2002-10-22 | Integrated Magnetoelectronics | Magnetoresistive trimming of GMR circuits |
JP4149647B2 (en) | 2000-09-28 | 2008-09-10 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
AU2002255949A1 (en) | 2001-03-23 | 2002-10-08 | Integrated Magnetoelectronics Company | A transpinnor-based sample-and-hold circuit and applications |
-
2004
- 2004-03-22 US US10/806,895 patent/US7005852B2/en not_active Expired - Lifetime
- 2004-03-24 WO PCT/US2004/009418 patent/WO2004088620A2/en active Application Filing
- 2004-03-24 EP EP04758459A patent/EP1618547A2/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5515314A (en) * | 1994-05-27 | 1996-05-07 | Fujitsu Limited | Storage device |
Also Published As
Publication number | Publication date |
---|---|
US20040196704A1 (en) | 2004-10-07 |
WO2004088620A2 (en) | 2004-10-14 |
EP1618547A2 (en) | 2006-01-25 |
US7005852B2 (en) | 2006-02-28 |
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