WO2004093268A3 - Light emitting devices - Google Patents

Light emitting devices Download PDF

Info

Publication number
WO2004093268A3
WO2004093268A3 PCT/US2004/010691 US2004010691W WO2004093268A3 WO 2004093268 A3 WO2004093268 A3 WO 2004093268A3 US 2004010691 W US2004010691 W US 2004010691W WO 2004093268 A3 WO2004093268 A3 WO 2004093268A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitting devices
light emitting
pattern
top surface
layer
Prior art date
Application number
PCT/US2004/010691
Other languages
French (fr)
Other versions
WO2004093268A9 (en
WO2004093268A2 (en
Inventor
Alexei A Erchak
Original Assignee
Luminus Devices Inc
Alexei A Erchak
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luminus Devices Inc, Alexei A Erchak filed Critical Luminus Devices Inc
Publication of WO2004093268A2 publication Critical patent/WO2004093268A2/en
Publication of WO2004093268A9 publication Critical patent/WO2004093268A9/en
Publication of WO2004093268A3 publication Critical patent/WO2004093268A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

Light-emitting devices including a layer with a dielectric function that varies spatially as a pattern to improve light extraction from the top surface of the device.
PCT/US2004/010691 2003-04-15 2004-04-06 Light emitting devices WO2004093268A2 (en)

Applications Claiming Priority (22)

Application Number Priority Date Filing Date Title
US46288903P 2003-04-15 2003-04-15
US60/462,889 2003-04-15
US47419903P 2003-05-29 2003-05-29
US60/474,199 2003-05-29
US47568203P 2003-06-04 2003-06-04
US60/475,682 2003-06-04
US50366103P 2003-09-17 2003-09-17
US50367203P 2003-09-17 2003-09-17
US50365403P 2003-09-17 2003-09-17
US50365303P 2003-09-17 2003-09-17
US50367103P 2003-09-17 2003-09-17
US60/503,653 2003-09-17
US60/503,671 2003-09-17
US60/503,654 2003-09-17
US60/503,672 2003-09-17
US60/503,661 2003-09-17
US51380703P 2003-10-23 2003-10-23
US60/513,807 2003-10-23
US51476403P 2003-10-27 2003-10-27
US60/514,764 2003-10-27
US10/724,015 US7521854B2 (en) 2003-04-15 2003-11-26 Patterned light emitting devices and extraction efficiencies related to the same
US10/724,015 2003-11-26

Publications (3)

Publication Number Publication Date
WO2004093268A2 WO2004093268A2 (en) 2004-10-28
WO2004093268A9 WO2004093268A9 (en) 2005-09-29
WO2004093268A3 true WO2004093268A3 (en) 2005-12-29

Family

ID=33163348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/010691 WO2004093268A2 (en) 2003-04-15 2004-04-06 Light emitting devices

Country Status (3)

Country Link
US (7) US7521854B2 (en)
TW (1) TWI368334B (en)
WO (1) WO2004093268A2 (en)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7521854B2 (en) 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7084434B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
US20040259279A1 (en) * 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7667238B2 (en) * 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7450311B2 (en) 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
DE102005016592A1 (en) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh LED chip
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
US7442964B2 (en) * 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
US20060038188A1 (en) 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
EP2426743B1 (en) * 2004-10-22 2019-02-20 Seoul Viosys Co., Ltd GaN compound semiconductor light emitting element and method of manufacturing the same
US7170100B2 (en) 2005-01-21 2007-01-30 Luminus Devices, Inc. Packaging designs for LEDs
US7692207B2 (en) * 2005-01-21 2010-04-06 Luminus Devices, Inc. Packaging designs for LEDs
US20070045640A1 (en) * 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US20060244370A1 (en) * 2005-05-02 2006-11-02 Eastman Kodak Company Light-emitting layer spacing in tandem OLED devices
US8163575B2 (en) * 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
US20070018186A1 (en) * 2005-07-19 2007-01-25 Lg Chem, Ltd. Light emitting diode device having advanced light extraction efficiency and preparation method thereof
US7391059B2 (en) * 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US7348603B2 (en) * 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US7388233B2 (en) * 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
US20070085098A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patterned devices and related methods
US20080099777A1 (en) * 2005-10-19 2008-05-01 Luminus Devices, Inc. Light-emitting devices and related systems
US7641735B2 (en) 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
KR100844722B1 (en) * 2006-03-07 2008-07-07 엘지전자 주식회사 Growth method of nanocone and Fabricating method of light emitting diode using the same
KR101198763B1 (en) * 2006-03-23 2012-11-12 엘지이노텍 주식회사 Post structure and LED using the structure and method of making the same
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP2918708B1 (en) * 2006-03-30 2019-10-30 Crystal Is, Inc. Method for annealing of aluminium nitride wafer
US7615789B2 (en) * 2006-05-09 2009-11-10 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode device structure
TWI304278B (en) * 2006-06-16 2008-12-11 Ind Tech Res Inst Semiconductor emitting device substrate and method of fabricating the same
US20080061306A1 (en) * 2006-09-12 2008-03-13 Hong Kong Applied Science and Technology Research Institute Company Limited Semiconductor light emitting device
KR100869962B1 (en) * 2006-12-07 2008-11-24 한국전자통신연구원 The Manufacturing Method of Light Emission Device including Current Spreading Layer
CN107059116B (en) 2007-01-17 2019-12-31 晶体公司 Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008094464A2 (en) * 2007-01-26 2008-08-07 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
KR100796129B1 (en) * 2007-01-30 2008-01-21 삼성에스디아이 주식회사 Organic light emitting display device and manufacturing method of the same
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
KR101469732B1 (en) * 2007-04-04 2014-12-05 코닌클리케 필립스 엔.브이. Light emitting device
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
EP2160770B1 (en) * 2007-06-01 2018-10-24 Trojan Technologies Ultraviolet radiation light emitting diode device
US20080308819A1 (en) * 2007-06-15 2008-12-18 Tpo Displays Corp. Light-Emitting Diode Arrays and Methods of Manufacture
US8143613B2 (en) 2007-11-27 2012-03-27 The Regents Of The University Of Michigan Organic light emitting device having multiple separate emissive layers
TWI357164B (en) * 2008-06-30 2012-01-21 E Pin Optical Industry Co Ltd Aspherical led angular lens for narrow distributio
TWI361261B (en) * 2008-06-30 2012-04-01 E Pin Optical Industry Co Ltd Aspherical led angular lens for wide distribution patterns and led assembly using the same
TWI395908B (en) * 2008-06-30 2013-05-11 E Pin Optical Industry Co Ltd Aspherical led angular lens for central distribution patterns and led assembly using the same
CN101729093B (en) * 2008-10-31 2013-08-07 华为技术有限公司 Method, system and device for adjusting power
KR100969160B1 (en) * 2009-03-10 2010-07-21 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
KR20110043282A (en) * 2009-10-21 2011-04-27 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
KR101084185B1 (en) * 2010-01-12 2011-11-17 삼성모바일디스플레이주식회사 Method for forming pattern and manufacturing method for organic light emitting device
KR100993094B1 (en) * 2010-02-01 2010-11-08 엘지이노텍 주식회사 Light emitting device, and light emitting device package
EP2588651B1 (en) 2010-06-30 2020-01-08 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US8410679B2 (en) * 2010-09-21 2013-04-02 Cree, Inc. Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface
US8872217B2 (en) 2011-04-15 2014-10-28 Luminus Devices, Inc. Electronic device contact structures
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
WO2013022129A1 (en) * 2011-08-09 2013-02-14 삼성전자주식회사 Nitride semiconductor light-emitting element
WO2013184385A1 (en) * 2012-06-04 2013-12-12 3M Innovative Properties Company Variable index light extraction layer with microreplicated posts and methods of making the same
TWI488336B (en) 2012-06-07 2015-06-11 Lextar Electronics Corp Light emitting diode and method of fabricating the same
US9299880B2 (en) 2013-03-15 2016-03-29 Crystal Is, Inc. Pseudomorphic electronic and optoelectronic devices having planar contacts
TWI640075B (en) 2017-10-31 2018-11-01 友達光電股份有限公司 Pixel light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522063B2 (en) * 2001-03-28 2003-02-18 Epitech Corporation Light emitting diode
US6534798B1 (en) * 1999-09-08 2003-03-18 California Institute Of Technology Surface plasmon enhanced light emitting diode and method of operation for the same
US20030141507A1 (en) * 2002-01-28 2003-07-31 Krames Michael R. LED efficiency using photonic crystal structure

Family Cites Families (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US622207A (en) * 1899-04-04 Driving mechanism
US3293513A (en) 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3922706A (en) 1965-07-31 1975-11-25 Telefunken Patent Transistor having emitter with high circumference-surface area ratio
US3739217A (en) * 1969-06-23 1973-06-12 Bell Telephone Labor Inc Surface roughening of electroluminescent diodes
US5181220A (en) * 1985-07-16 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting light concentration device
US4864370A (en) 1987-11-16 1989-09-05 Motorola, Inc. Electrical contact for an LED
US5126231A (en) 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
JPH0442582A (en) 1990-06-08 1992-02-13 Eastman Kodak Japan Kk Light emitting diode array
US5073041A (en) 1990-11-13 1991-12-17 Bell Communications Research, Inc. Integrated assembly comprising vertical cavity surface-emitting laser array with Fresnel microlenses
JPH04264781A (en) 1991-02-20 1992-09-21 Eastman Kodak Japan Kk Light-emitting diode array
US5724062A (en) 1992-08-05 1998-03-03 Cree Research, Inc. High resolution, high brightness light emitting diode display and method and producing the same
US5359345A (en) 1992-08-05 1994-10-25 Cree Research, Inc. Shuttered and cycled light emitting diode display and method of producing the same
US5363009A (en) 1992-08-10 1994-11-08 Mark Monto Incandescent light with parallel grooves encompassing a bulbous portion
WO1994005948A1 (en) * 1992-09-09 1994-03-17 Massachusetts Institute Of Technology Replicated-in-place internal viscous shear damper for machine structures and components
DE69405427T2 (en) 1993-03-04 1998-04-02 At & T Corp Device with focusing surface-emitting semiconductor laser
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JPH06338630A (en) 1993-05-28 1994-12-06 Omron Corp Semiconductor light-emitting element, and optical detector, optical information processor, optical coupler and light-emitting device using the light-emitting element
TW253999B (en) 1993-06-30 1995-08-11 Hitachi Cable
US5600483A (en) 1994-05-10 1997-02-04 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5633527A (en) 1995-02-06 1997-05-27 Sandia Corporation Unitary lens semiconductor device
US5814839A (en) 1995-02-16 1998-09-29 Sharp Kabushiki Kaisha Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same
DE19629920B4 (en) 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Light-emitting diode with a non-absorbing distributed Bragg reflector
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
DE69724411T3 (en) 1996-09-24 2012-05-16 Seiko Epson Corp. LIGHTING DEVICE AND DISPLAY WHICH IT USES
DE19640594B4 (en) 1996-10-01 2016-08-04 Osram Gmbh module
US5834331A (en) 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
US5955749A (en) 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
FR2758890B1 (en) 1997-01-29 1999-02-26 Thomson Multimedia Sa OPTICAL POLARIZATION DEVICE
US6388264B1 (en) 1997-03-28 2002-05-14 Benedict G Pace Optocoupler package being hermetically sealed
GB9710062D0 (en) 1997-05-16 1997-07-09 British Tech Group Optical devices and methods of fabrication thereof
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JPH11146138A (en) * 1997-11-06 1999-05-28 Asahi Optical Co Ltd Feed mechanism
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6265820B1 (en) 1998-01-29 2001-07-24 Emagin Corporation Heat removal system for use in organic light emitting diode displays having high brightness
US6091085A (en) 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JP3456143B2 (en) 1998-05-01 2003-10-14 信越半導体株式会社 Laminated materials and optical functional devices
US6504180B1 (en) 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
US6335548B1 (en) 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
JP3525061B2 (en) 1998-09-25 2004-05-10 株式会社東芝 Method for manufacturing semiconductor light emitting device
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP3469484B2 (en) 1998-12-24 2003-11-25 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6222207B1 (en) 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
TW437104B (en) 1999-05-25 2001-05-28 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
US6288840B1 (en) 1999-06-22 2001-09-11 Moxtek Imbedded wire grid polarizer for the visible spectrum
US6122103A (en) 1999-06-22 2000-09-19 Moxtech Broadband wire grid polarizer for the visible spectrum
US6287882B1 (en) 1999-10-04 2001-09-11 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same
US6614056B1 (en) 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
US6657236B1 (en) 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
JP2001177145A (en) 1999-12-21 2001-06-29 Toshiba Electronic Engineering Corp Semiconductor light emitting device and method of manufacturing the same
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
EP1263626A2 (en) 2000-03-02 2002-12-11 Donnelly Corporation Video mirror systems incorporating an accessory module
US6777871B2 (en) 2000-03-31 2004-08-17 General Electric Company Organic electroluminescent devices with enhanced light extraction
JP4643794B2 (en) 2000-04-21 2011-03-02 富士通株式会社 Semiconductor light emitting device
GB0011749D0 (en) 2000-05-17 2000-07-05 Cambridge Display Tech Ltd Light-eminating devices
JP3934851B2 (en) * 2000-05-23 2007-06-20 日本食品化工株式会社 Novel cyclodextrin gluconotransferase, method for producing the same, and method for producing cyclodextrin using the enzyme
US6853663B2 (en) 2000-06-02 2005-02-08 Agilent Technologies, Inc. Efficiency GaN-based light emitting devices
JP4024994B2 (en) 2000-06-30 2007-12-19 株式会社東芝 Semiconductor light emitting device
TW445507B (en) 2000-07-20 2001-07-11 United Epitaxy Co Ltd Roughened interface of light emitting device
US6661028B2 (en) 2000-08-01 2003-12-09 United Epitaxy Company, Ltd. Interface texturing for light-emitting device
US6998281B2 (en) 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
TW579608B (en) 2000-11-24 2004-03-11 High Link Technology Corp Method and structure of forming electrode for light emitting device
JP5110744B2 (en) 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Light emitting device and manufacturing method thereof
JP2002280607A (en) 2001-01-10 2002-09-27 Toyoda Gosei Co Ltd Light emitting device
US6703780B2 (en) * 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6468824B2 (en) 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
US6574383B1 (en) 2001-04-30 2003-06-03 Massachusetts Institute Of Technology Input light coupler using a pattern of dielectric contrast distributed in at least two dimensions
US6709929B2 (en) 2001-06-25 2004-03-23 North Carolina State University Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates
JP2003017751A (en) 2001-06-28 2003-01-17 Toyoda Gosei Co Ltd Light emitting diode
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
DE10147887C2 (en) 2001-09-28 2003-10-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with a contact, which comprises a plurality of spaced-apart contact points
US6812503B2 (en) 2001-11-29 2004-11-02 Highlink Technology Corporation Light-emitting device with improved reliability
DE10158754A1 (en) 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Light emitting semiconductor component, uses conductive adhesive material for joining semiconductor body electrically and thermally to carrier
US6724013B2 (en) 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
TW576864B (en) * 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device
JP3802424B2 (en) 2002-01-15 2006-07-26 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP3782357B2 (en) * 2002-01-18 2006-06-07 株式会社東芝 Manufacturing method of semiconductor light emitting device
US20030141563A1 (en) 2002-01-28 2003-07-31 Bily Wang Light emitting diode package with fluorescent cover
AU2003207287B2 (en) 2002-01-28 2007-12-13 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method
JP3715627B2 (en) * 2002-01-29 2005-11-09 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
US6869820B2 (en) 2002-01-30 2005-03-22 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
US6943379B2 (en) 2002-04-04 2005-09-13 Toyoda Gosei Co., Ltd. Light emitting diode
US6849558B2 (en) 2002-05-22 2005-02-01 The Board Of Trustees Of The Leland Stanford Junior University Replication and transfer of microstructures and nanostructures
US20030222263A1 (en) 2002-06-04 2003-12-04 Kopin Corporation High-efficiency light-emitting diodes
US6878969B2 (en) 2002-07-29 2005-04-12 Matsushita Electric Works, Ltd. Light emitting device
US6649437B1 (en) 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
TW541732B (en) 2002-08-28 2003-07-11 Arima Optoelectronics Corp Manufacturing method of LED having transparent substrate
US6762069B2 (en) 2002-11-19 2004-07-13 United Epitaxy Company, Ltd. Method for manufacturing light-emitting element on non-transparent substrate
US7750059B2 (en) 2002-12-04 2010-07-06 Hewlett-Packard Development Company, L.P. Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
US7492092B2 (en) * 2002-12-17 2009-02-17 Seiko Epson Corporation Self-emitting element, display panel, display apparatus, and method of manufacturing self-emitting element
US20040130263A1 (en) 2003-01-02 2004-07-08 Ray-Hua Horng High brightness led and method for producing the same
US7141828B2 (en) 2003-03-19 2006-11-28 Gelcore, Llc Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact
US7084434B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7521854B2 (en) 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7074631B2 (en) 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7262550B2 (en) 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
KR100483049B1 (en) 2003-06-03 2005-04-15 삼성전기주식회사 A METHOD OF PRODUCING VERTICAL GaN LIGHT EMITTING DIODES
JP3737494B2 (en) * 2003-06-10 2006-01-18 株式会社東芝 Semiconductor light emitting device, method for manufacturing the same, and semiconductor light emitting device
US6847057B1 (en) 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US6958494B2 (en) 2003-08-14 2005-10-25 Dicon Fiberoptics, Inc. Light emitting diodes with current spreading layer
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7450311B2 (en) * 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534798B1 (en) * 1999-09-08 2003-03-18 California Institute Of Technology Surface plasmon enhanced light emitting diode and method of operation for the same
US6522063B2 (en) * 2001-03-28 2003-02-18 Epitech Corporation Light emitting diode
US20030141507A1 (en) * 2002-01-28 2003-07-31 Krames Michael R. LED efficiency using photonic crystal structure

Also Published As

Publication number Publication date
TWI368334B (en) 2012-07-11
US7417367B2 (en) 2008-08-26
US7459845B2 (en) 2008-12-02
US20050167687A1 (en) 2005-08-04
US20100316077A1 (en) 2010-12-16
US20090014742A1 (en) 2009-01-15
US7345416B2 (en) 2008-03-18
US20080251806A1 (en) 2008-10-16
TW200503296A (en) 2005-01-16
US7521854B2 (en) 2009-04-21
US20040207320A1 (en) 2004-10-21
WO2004093268A9 (en) 2005-09-29
WO2004093268A2 (en) 2004-10-28
US20050145877A1 (en) 2005-07-07
US7733007B2 (en) 2010-06-08
US20050211994A1 (en) 2005-09-29

Similar Documents

Publication Publication Date Title
WO2004093268A3 (en) Light emitting devices
WO2004093132A3 (en) Light emitting devices
WO2007073496A3 (en) Lighting device
TWI350304B (en) Aggregate organic light emitting diode devices
WO2004093136A3 (en) Light emitting devices
AU2003269821A8 (en) Organic light emitting devices based on the formation of an electron-hole plasma
GB2425886B (en) Organic light emitting devices
EP1624243A4 (en) Light emitting surface body structure
DE60306721D1 (en) Device with organic light-emitting diodes
HK1104673A1 (en) Organic light emitting diode
EP1614160A4 (en) Light emitting devices
EP1614161A4 (en) Light emitting devices
TW200739964A (en) Light emitting device
AU2003263901A8 (en) Organic light emitting devices for illumination
TW200739951A (en) Light-emitting device
AU2003256084A1 (en) Organic light-emitting device
AU2003211786A1 (en) Organic light-emitting device
AUPS327002A0 (en) An electroluminescent light emitting device
SG114514A1 (en) Organic light emitting diode (oled)
WO2009107056A3 (en) Light emitting diode device
GB0218202D0 (en) Organic light emitting diodes
WO2006134536A3 (en) Illumination device
WO2009125918A3 (en) Lighting display apparatus and the method for manufacturing the same
WO2012129580A3 (en) Circuit board element having at least one led
WO2009020298A3 (en) Lighting device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
COP Corrected version of pamphlet

Free format text: PAGES 1/18-18/18, DRAWINGS, REPLACED BY NEW PAGES 1/14-14/14; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

122 Ep: pct application non-entry in european phase