WO2004107422A3 - Plating apparatus and plating method - Google Patents

Plating apparatus and plating method Download PDF

Info

Publication number
WO2004107422A3
WO2004107422A3 PCT/JP2004/007437 JP2004007437W WO2004107422A3 WO 2004107422 A3 WO2004107422 A3 WO 2004107422A3 JP 2004007437 W JP2004007437 W JP 2004007437W WO 2004107422 A3 WO2004107422 A3 WO 2004107422A3
Authority
WO
WIPO (PCT)
Prior art keywords
plating
substrate
seed layer
plating apparatus
resist
Prior art date
Application number
PCT/JP2004/007437
Other languages
French (fr)
Other versions
WO2004107422A2 (en
Inventor
Masahiko Sekimoto
Yasuhiko Endo
Stephen Strausser
Takashi Takemura
Nobutoshi Saito
Fumio Kuriyama
Junichiro Yoshioka
Kuniaki Horie
Yoshio Minami
Kenji Kamoda
Original Assignee
Ebara Corp
Masahiko Sekimoto
Yasuhiko Endo
Stephen Strausser
Takashi Takemura
Nobutoshi Saito
Fumio Kuriyama
Junichiro Yoshioka
Kuniaki Horie
Yoshio Minami
Kenji Kamoda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003148811A external-priority patent/JP2004353004A/en
Priority claimed from JP2004051849A external-priority patent/JP4846201B2/en
Application filed by Ebara Corp, Masahiko Sekimoto, Yasuhiko Endo, Stephen Strausser, Takashi Takemura, Nobutoshi Saito, Fumio Kuriyama, Junichiro Yoshioka, Kuniaki Horie, Yoshio Minami, Kenji Kamoda filed Critical Ebara Corp
Priority to US10/544,623 priority Critical patent/US20060141157A1/en
Publication of WO2004107422A2 publication Critical patent/WO2004107422A2/en
Publication of WO2004107422A3 publication Critical patent/WO2004107422A3/en
Priority to KR1020057022508A priority patent/KR101099068B1/en
Priority to US12/543,832 priority patent/US20090301395A1/en
Priority to US13/616,050 priority patent/US20130015075A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Abstract

A plating apparatus has an ashing unit (300) configured to perform an ashing process on a resist (502) applied on a surface of a seed layer (500) formed on a substrate (W), and a pre-wetting section (26) configured to provide hydrophilicity to a surface of the substrate after the ashing process. The plating apparatus includes a pre-soaking section (28) configured to bring the surface of the substrate into contact with a treatment solution to clean or activate a surface of the seed layer formed on the substrate. The plating apparatus also includes a plating unit (34) configured to bring the surface of the substrate into a plating solution in a plating tank while the resist is used as a mask so as to form a plated film (504) on the surface of the seed layer formed on the substrate.
PCT/JP2004/007437 2003-05-27 2004-05-25 Plating apparatus and plating method WO2004107422A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/544,623 US20060141157A1 (en) 2003-05-27 2004-05-25 Plating apparatus and plating method
KR1020057022508A KR101099068B1 (en) 2003-05-27 2005-11-25 Plating apparatus and plating method
US12/543,832 US20090301395A1 (en) 2003-05-27 2009-08-19 Plating apparatus and plating method
US13/616,050 US20130015075A1 (en) 2003-05-27 2012-09-14 Plating apparatus and plating method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003-148811 2003-05-27
JP2003148811A JP2004353004A (en) 2003-05-27 2003-05-27 Plating device
JP2004051849A JP4846201B2 (en) 2004-02-26 2004-02-26 Plating apparatus and plating method
JP2004-051849 2004-02-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/543,832 Division US20090301395A1 (en) 2003-05-27 2009-08-19 Plating apparatus and plating method

Publications (2)

Publication Number Publication Date
WO2004107422A2 WO2004107422A2 (en) 2004-12-09
WO2004107422A3 true WO2004107422A3 (en) 2005-06-16

Family

ID=33492418

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/007437 WO2004107422A2 (en) 2003-05-27 2004-05-25 Plating apparatus and plating method

Country Status (4)

Country Link
US (3) US20060141157A1 (en)
KR (1) KR101099068B1 (en)
TW (1) TWI329140B (en)
WO (1) WO2004107422A2 (en)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100739632B1 (en) * 2005-12-21 2007-07-13 삼성전자주식회사 Equipment for testing a semiconductor module
DE102006060398A1 (en) * 2006-12-20 2008-06-26 Mankiewicz Gebr. & Co (Gmbh & Co Kg) Fluid coating e.g. finish paint, applying device for surface of body of e.g. passenger car, has nozzle applying fluid on surface by air flow, and unit producing air flow, which deflects fluid between nozzle and surface
DE102006033222B4 (en) * 2006-07-18 2014-04-30 Epcos Ag Module with flat structure and procedure for assembly
KR100832705B1 (en) * 2006-12-23 2008-05-28 동부일렉트로닉스 주식회사 Plating method of via in system-in-package and system of the same
DE102007026635B4 (en) * 2007-06-06 2010-07-29 Atotech Deutschland Gmbh Apparatus for wet-chemical treatment of goods, use of a flow organ, method for installing a flow organ in the device and method for producing a wet-chemical treated goods
JP5457010B2 (en) * 2007-11-01 2014-04-02 アルメックスＰｅ株式会社 Continuous plating equipment
US8177944B2 (en) 2007-12-04 2012-05-15 Ebara Corporation Plating apparatus and plating method
US7704886B2 (en) * 2008-02-14 2010-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-step Cu seed layer formation for improving sidewall coverage
US8252690B2 (en) * 2008-02-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. In situ Cu seed layer formation for improving sidewall coverage
TWI385743B (en) * 2008-12-31 2013-02-11 Cheng Mei Instr Co Ltd System and method for separating defective dies from a wafer
US9677188B2 (en) 2009-06-17 2017-06-13 Novellus Systems, Inc. Electrofill vacuum plating cell
US8962085B2 (en) 2009-06-17 2015-02-24 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling
US9455139B2 (en) 2009-06-17 2016-09-27 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
WO2011036158A2 (en) * 2009-09-28 2011-03-31 Basf Se Wafer pretreatment for copper electroplating
US9138784B1 (en) 2009-12-18 2015-09-22 Novellus Systems, Inc. Deionized water conditioning system and methods
TWI487815B (en) * 2010-01-27 2015-06-11 Ebara Corp Plating method and plating apparatus
JP5586314B2 (en) * 2010-04-23 2014-09-10 芝浦メカトロニクス株式会社 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
CN102286760B (en) * 2010-05-19 2016-10-05 诺发系统有限公司 Fill method, aqueous solution electroplating bath solution, electroplating device and the system of the large-scale recessed features of high aspect ratio with electrochemical metal
TWI413708B (en) * 2010-08-20 2013-11-01 Zhen Ding Technology Co Ltd Apparatus and method for plating
US9728435B2 (en) * 2010-10-21 2017-08-08 Ebara Corporation Plating apparatus and plating method
JP2012224944A (en) * 2011-04-08 2012-11-15 Ebara Corp Electroplating method
WO2013086217A1 (en) 2011-12-06 2013-06-13 Masco Corporation Of Indiana Ozone distribution in a faucet
US20130193575A1 (en) * 2012-01-27 2013-08-01 Skyworks Solutions, Inc. Optimization of copper plating through wafer via
TWI458861B (en) * 2012-06-04 2014-11-01 Arps Inc Surface Treatment of Copper in Copper Process Cleaning Solution
TWI458536B (en) * 2012-06-04 2014-11-01 Arps Inc Surface Treatment Chemical Copper Process Cleaning Solution for Copper Recycling System
TWI457972B (en) * 2012-10-12 2014-10-21 Nano Electronics And Micro System Technologies Inc Automatic online plasma processing system
US9613833B2 (en) 2013-02-20 2017-04-04 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US10820427B2 (en) 2013-03-15 2020-10-27 Sanmina Corporation Simultaneous and selective wide gap partitioning of via structures using plating resist
CN104131252A (en) * 2013-05-02 2014-11-05 上海和辉光电有限公司 Method and device for improving packaging film-forming uniformity
US9435049B2 (en) 2013-11-20 2016-09-06 Lam Research Corporation Alkaline pretreatment for electroplating
JP6508935B2 (en) * 2014-02-28 2019-05-08 株式会社荏原製作所 Substrate holder, plating apparatus and plating method
JP2015211043A (en) * 2014-04-23 2015-11-24 株式会社荏原製作所 Substrate processing method
JP6380028B2 (en) * 2014-11-13 2018-08-29 富士通株式会社 Inductor manufacturing method
WO2016075787A1 (en) * 2014-11-13 2016-05-19 新電元工業株式会社 Method for manufacturing semiconductor device and glass coating forming device
US9481942B2 (en) 2015-02-03 2016-11-01 Lam Research Corporation Geometry and process optimization for ultra-high RPM plating
US9617648B2 (en) 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
US11458214B2 (en) 2015-12-21 2022-10-04 Delta Faucet Company Fluid delivery system including a disinfectant device
JP6756540B2 (en) 2016-08-08 2020-09-16 株式会社荏原製作所 A storage medium containing a plating device, a control method for the plating device, and a program for causing a computer to execute the control method for the plating device.
JP6857531B2 (en) 2017-03-31 2021-04-14 株式会社荏原製作所 Plating method and plating equipment
CN112301394B (en) * 2020-10-30 2022-05-24 西北工业大学 Plating cavity capable of improving uniformity of electroplated layer on inner surface of ring-shaped element
US11585008B2 (en) * 2020-12-29 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Plating apparatus for plating semiconductor wafer and plating method
CN115365083A (en) * 2021-05-17 2022-11-22 亨泰光学股份有限公司 Bidirectional anode plasma chemical vapor deposition coating equipment
TWI808530B (en) * 2021-11-08 2023-07-11 日商荏原製作所股份有限公司 Plating device and manufacturing method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242543A (en) * 1991-02-06 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Wet etching method for forming metal film pattern having tapered edges
US5500250A (en) * 1991-02-06 1996-03-19 Matsushita Electric Industrial Co., Ltd. Chemically adsorbed film and method of manufacturing the same
US6006764A (en) * 1997-01-28 1999-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of stripping photoresist from Al bonding pads that prevents corrosion
WO2002068727A2 (en) * 2001-02-23 2002-09-06 Ebara Corporation Copper-plating solution, plating method and plating apparatus
US20020132744A1 (en) * 2000-12-08 2002-09-19 Wojtczak William A. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6551487B1 (en) * 2001-05-31 2003-04-22 Novellus Systems, Inc. Methods and apparatus for controlled-angle wafer immersion
US20030143845A1 (en) * 2001-12-06 2003-07-31 Seiko Epson Corporation Mask forming and removing method, and a semiconductor device, an electric circuit, a display module, a color filter and an emissive device manufactured by the same method
US6694284B1 (en) * 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2473918A (en) * 1942-12-08 1949-06-21 Westinghouse Electric Corp Control system for electrolytic processes
US3547789A (en) * 1968-05-07 1970-12-15 Us Interior Electrodeposition of thick coatings of palladium
US3869386A (en) * 1972-10-24 1975-03-04 Schlage Lock Co Removal of heavy metal ions from plating wastes
US4278139A (en) * 1978-05-08 1981-07-14 Interface, Inc. Weighing apparatus with overload protection for off-center loading
US4552352A (en) * 1983-04-07 1985-11-12 General Instrument Corp. Top loading sheet feed apparatus for printer or the like
US4428815A (en) * 1983-04-28 1984-01-31 Western Electric Co., Inc. Vacuum-type article holder and methods of supportively retaining articles
US4608138A (en) * 1984-02-16 1986-08-26 Mitsubishi Denki Kabushiki Kaisha Electrolytic method and apparatus
US4652352A (en) * 1985-11-04 1987-03-24 Saieva Carl J Process and apparatus for recovering metals from dilute solutions
US4851902A (en) * 1986-10-29 1989-07-25 Electroplating Engineers Of Japan, Limited Auatomatic inspection system for IC lead frames and visual inspection method thereof
US4960493A (en) * 1988-07-22 1990-10-02 Hughes Aircraft Company Plating on metallic substrates
JP2768732B2 (en) * 1989-05-01 1998-06-25 神鋼パンテック株式会社 Heat degassing ultrapure water equipment
DE69231787T2 (en) * 1991-01-28 2001-08-02 Matsushita Electric Ind Co Ltd Medical article and process for its manufacture
US5149411A (en) * 1991-04-22 1992-09-22 Robert L. Castle Toxic fumes removal apparatus for plating tank
JPH05109674A (en) * 1991-10-18 1993-04-30 Ushio Inc Method and device for ashing resist film
JPH07283291A (en) * 1994-04-04 1995-10-27 Nikon Corp Wafer pre-alignment device
US5516412A (en) * 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US6082373A (en) * 1996-07-05 2000-07-04 Kabushiki Kaisha Toshiba Cleaning method
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
EP1019954B1 (en) * 1998-02-04 2013-05-15 Applied Materials, Inc. Method and apparatus for low-temperature annealing of electroplated copper micro-structures in the production of a microelectronic device
US6391166B1 (en) * 1998-02-12 2002-05-21 Acm Research, Inc. Plating apparatus and method
US6132688A (en) * 1998-05-06 2000-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for treating exhaust gas from a semiconductor fabrication machine
US6143126A (en) * 1998-05-12 2000-11-07 Semitool, Inc. Process and manufacturing tool architecture for use in the manufacture of one or more metallization levels on an integrated circuit
JP2000113526A (en) * 1998-10-09 2000-04-21 Ricoh Co Ltd Production of stamper for optical information recording medium
US6254760B1 (en) * 1999-03-05 2001-07-03 Applied Materials, Inc. Electro-chemical deposition system and method
US7022211B2 (en) * 2000-01-31 2006-04-04 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
US6391209B1 (en) * 1999-08-04 2002-05-21 Mykrolis Corporation Regeneration of plating baths
US6344432B1 (en) * 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP2001064664A (en) * 1999-08-27 2001-03-13 Univ Nagoya Production of part having highly slippery surface and part having highly slippery surface
KR20010107766A (en) * 2000-05-26 2001-12-07 마에다 시게루 Substrate processing apparatus and substrate plating apparatus
US6383401B1 (en) * 2000-06-30 2002-05-07 International Flex Technologies, Inc. Method of producing flex circuit with selectively plated gold
US7349090B2 (en) * 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6673637B2 (en) * 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6812045B1 (en) * 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US7130029B2 (en) * 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6919957B2 (en) * 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
EP1319244A1 (en) * 2000-09-20 2003-06-18 Kla-Tencor Inc. Methods and systems for semiconductor fabrication processes
US6782337B2 (en) * 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
JP2002363794A (en) * 2001-06-01 2002-12-18 Ebara Corp Substrate holder and plating device
TWI268966B (en) * 2001-06-07 2006-12-21 Shipley Co Llc Electrolytic copper plating method
US20030074098A1 (en) * 2001-09-18 2003-04-17 Cheung Robin W. Integrated equipment set for forming an interconnect on a substrate
JP2003301293A (en) * 2002-04-10 2003-10-24 Hitachi Ltd Production method for semiconductor device
US6677251B1 (en) * 2002-07-29 2004-01-13 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
JP3675789B2 (en) * 2002-10-25 2005-07-27 東京応化工業株式会社 Method for forming fine pattern

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242543A (en) * 1991-02-06 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Wet etching method for forming metal film pattern having tapered edges
US5500250A (en) * 1991-02-06 1996-03-19 Matsushita Electric Industrial Co., Ltd. Chemically adsorbed film and method of manufacturing the same
US6006764A (en) * 1997-01-28 1999-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of stripping photoresist from Al bonding pads that prevents corrosion
US6694284B1 (en) * 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US20020132744A1 (en) * 2000-12-08 2002-09-19 Wojtczak William A. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
WO2002068727A2 (en) * 2001-02-23 2002-09-06 Ebara Corporation Copper-plating solution, plating method and plating apparatus
US6551487B1 (en) * 2001-05-31 2003-04-22 Novellus Systems, Inc. Methods and apparatus for controlled-angle wafer immersion
US20030143845A1 (en) * 2001-12-06 2003-07-31 Seiko Epson Corporation Mask forming and removing method, and a semiconductor device, an electric circuit, a display module, a color filter and an emissive device manufactured by the same method

Also Published As

Publication number Publication date
WO2004107422A2 (en) 2004-12-09
KR20060012019A (en) 2006-02-06
US20090301395A1 (en) 2009-12-10
TWI329140B (en) 2010-08-21
TW200500500A (en) 2005-01-01
US20130015075A1 (en) 2013-01-17
KR101099068B1 (en) 2011-12-26
US20060141157A1 (en) 2006-06-29

Similar Documents

Publication Publication Date Title
WO2004107422A3 (en) Plating apparatus and plating method
TW200507445A (en) Lithographic apparatus and device manufacturing method
TWI263872B (en) Cleaning solution used in photolithography and a method of treating substrate
WO2005062908A3 (en) Methods of making a pattern of optical element shapes on a roll for use in making optical elements on or in substrates
WO2004013693A3 (en) Scatterometry alignment for imprint lithography
EP1580607A3 (en) Process solutions containing surfactants
TW201614390A (en) Exposure equipment, exposure method and device manufacturing method
EP1571698A4 (en) Exposure apparatus, exposure method and method for manufacturing device
JP2008102348A5 (en)
WO2003092041A3 (en) Method for fabricating a soi substrate a high resistivity support substrate
CN101198902A (en) Soft lithographic stamp with a chemically patterned surface
TW367602B (en) Manufacturing method for semiconductor apparatus
EP1770765A3 (en) Substrate processing method
WO2004006291A3 (en) Patterning method
ATE423227T1 (en) DEVICE FOR ETCHING A CONDUCTIVE LAYER AND ETCHING METHOD
MY129085A (en) Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit
EP1480263A4 (en) Method of treating surface, semiconductor device, process for producing semiconductor device, and apparatus for treatment
TW200517529A (en) Plating method and apparatus
TW200643517A (en) Photoresist coating method and apparatus
TW200622492A (en) A conductive lithographic polymer and method of making devices using same
EP1288717A3 (en) Phase shift mask blank, phase shift mask, and method of manufacture
DE60035648D1 (en) Method for cleaning a device for producing thin-film silicon
WO2009054295A1 (en) Diamond electrode, treatment device, and method for producing diamond electrode
WO2008021265A3 (en) Semiconductor substrate cleaning apparatus
TW200620466A (en) A method for supercritical carbon dioxide processing of fluoro-carbon films

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
ENP Entry into the national phase

Ref document number: 2006141157

Country of ref document: US

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 10544623

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 20048107003

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020057022508

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020057022508

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 10544623

Country of ref document: US

122 Ep: pct application non-entry in european phase