WO2005001800A2 - Alternative thin film transistors for liquid crystal displays - Google Patents
Alternative thin film transistors for liquid crystal displays Download PDFInfo
- Publication number
- WO2005001800A2 WO2005001800A2 PCT/US2004/018037 US2004018037W WO2005001800A2 WO 2005001800 A2 WO2005001800 A2 WO 2005001800A2 US 2004018037 W US2004018037 W US 2004018037W WO 2005001800 A2 WO2005001800 A2 WO 2005001800A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- film transistors
- gate
- film transistor
- source
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 7
- 230000003071 parasitic effect Effects 0.000 claims abstract description 22
- 230000000694 effects Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
Definitions
- FIG. 1A depicts the "double TFT" arrangement 100 of the '451 patent.
- Source line 104 connects to the TFT via source electrode 106.
- Two gate electrodes 1708 are connected to gate line 102.
- Two drain electrodes 110 connect to the pixel and are formed such that the two gate electrodes 108 affect conduction from the source electrode to the drain electrodes when activated.
- FIG. 4 depicts a TFT 400 made in the manner taught in the '297 patent.
- gate line 402 delivers the gate signal to gate electrode 408.
- Source line 404 sends image data to source electrodes 406.
- FIG. 1 shows a prior art TFT having a double source/drain structure.
- FIGS. 2 and 3 show alternative TFTs having a double source/drain structure.
- FIG. 4 shows a prior art TFT with a double gate structure.
- FIG. 5 show TFT structures in a reverse orientation and normal orientation, respectively.
- FIG. 6 show TFT structures in a reverse orientation and normal orientation with an added gate crossover in the normal orientation to balance any parasitic capacitance found in the reverse orientation.
- FIGS. 7 show TFT structures in a reverse orientation and normal orientation with one fewer gate crossover in the reverse orientation to match any parasitic capacitance in the normal orientation.
- FIG. 1 shows a prior art TFT having a double source/drain structure.
- FIGS. 2 and 3 show alternative TFTs having a double source/drain structure.
- FIG. 4 shows a prior art TFT with a double gate structure.
- FIG. 5 show TFT structures in a reverse orientation and normal orientation, respectively.
- FIG. 6 show T
- FIG. 8 shows one novel pixel element design having a comer removed from the pixel to balance parasitic capacitances.
- FIG. 9 shows yet another novel pixel element design having multiple corners removed to balance parasitic capacitances.
- FIG. 10 shows yet another novel pixel structure in which at least one extra line is added to shield the pixel element from parasitic effects.
- FIGS. 2 and 3 provide different alternative embodiments for the prior art double TFT structure shown in FIG. 1. These structures can provide reduced source to gate capacitance, which can cause crosstalk in certain images. However, the gate to drain crossover can lessen the damage to image quality.
- One advantage of the embodiment of FIG. 3 is that there is only one crossover 132 that may reduce parasitic capacitance.
- TFTs are remapped on the panel, it is possible for some TFTs on the panel to be implemented in different comers or quadrants of a pixel area. For example, some TFTs may be constructed in the upper left hand comer of the pixel area, some in the upper right hand comer of the pixel area and so on. If all such TFTs were constructed the same way, then it would be likely that the source-drain orientation would be reversed for left hand corner and right hand comer implementation. Such non-uniformity of construction might introduce uneven parasitic capacitance in the case of a given TFT misalignment. [018] FIG.
- TFT 504 is constructed within the upper left hand comer of its associated pixel in the usual manner - i.e. without any crossovers to avoid any introduced parasitic capacitance. It is noted that the source (S) and drain (D) electrodes are placed in a left-to-right fashion. TFT 502 is shown constructed in the upper right hand corner of a pixel area in a reverse orientation - i.e. a crossover 514 from source line 506 is constructed so that the source electrode 510 and drain electrode 512 are also in left-to-right fashion.
- FIG. 6 shows another embodiment of TFTs 602 and 604.
- FIG. 7 is yet another embodiment of TFTs 702 and 704.
- the gate electrode crossover 606 in FIG. 6 has been removed in favor of a gate line crossover 706 which may have a lesser impact on individual pixel elements.
- FIGS. 8 and 9 are embodiments of pixel elements with comers 810 and 910 removed to match the one comer removed containing the TFT structure. These pixel elements as designed here may balance the parasitic capacitances than a normal pixel structure.
- FIG. 8 and 9 are embodiments of pixel elements with comers 810 and 910 removed to match the one comer removed containing the TFT structure. These pixel elements as designed here may balance the parasitic capacitances than a normal pixel structure.
- FIG. 10 is another embodiment of a pixel structure that employs at least one extra metal line 1010 that may help to shield the pixel element from the parasitic capacitances between the gate lines and the pixel element. Additionally, if a dot inversion scheme is employed, then the opposing polarities on both lines 1010 will also help to balance any parasitic capacitance between the source lines and the pixel elements.
- standard LCD fabrication techniques can be implemented to form such structures.
- the column, gate, and electrode lines can be formed of transparent material such as transparent conductive oxide so as not to degrade the optical qualities of the LCD.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/456,794 US7791679B2 (en) | 2003-06-06 | 2003-06-06 | Alternative thin film transistors for liquid crystal displays |
US10/456,794 | 2003-06-06 |
Publications (2)
Publication Number | Publication Date |
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WO2005001800A2 true WO2005001800A2 (en) | 2005-01-06 |
WO2005001800A3 WO2005001800A3 (en) | 2005-04-28 |
Family
ID=33490236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/018037 WO2005001800A2 (en) | 2003-06-06 | 2004-06-04 | Alternative thin film transistors for liquid crystal displays |
Country Status (5)
Country | Link |
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US (2) | US7791679B2 (en) |
KR (1) | KR101041089B1 (en) |
CN (2) | CN101488527B (en) |
TW (1) | TWI310861B (en) |
WO (1) | WO2005001800A2 (en) |
Families Citing this family (10)
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US7268758B2 (en) | 2004-03-23 | 2007-09-11 | Clairvoyante, Inc | Transistor backplanes for liquid crystal displays comprising different sized subpixels |
CN101176108B (en) | 2005-05-20 | 2010-09-29 | 三星电子株式会社 | Multiprimary color subpixel rendering with metameric filtering |
TWI352868B (en) * | 2006-11-03 | 2011-11-21 | Au Optronics Corp | Liquid crystal display pannel and active device ar |
US7567370B2 (en) * | 2007-07-26 | 2009-07-28 | Hewlett-Packard Development Company, L.P. | Color display having layer dependent spatial resolution and related method |
TWI363917B (en) | 2008-02-01 | 2012-05-11 | Au Optronics Corp | Thin film transistor array substrate |
US8792063B2 (en) * | 2011-09-20 | 2014-07-29 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate, liquid crystal display device and methods for manufacturing and repairing the array substrate |
CN102360146A (en) * | 2011-10-14 | 2012-02-22 | 深圳市华星光电技术有限公司 | TFT-LCD (thin film transistor-liquid crystal display) array base plate and manufacturing method thereof |
TWI559046B (en) * | 2012-03-30 | 2016-11-21 | 友達光電股份有限公司 | Pixel array and display panel |
CN110825264B (en) * | 2019-10-31 | 2022-10-11 | 厦门天马微电子有限公司 | Display panel, driving method and touch display device |
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2003
- 2003-06-06 US US10/456,794 patent/US7791679B2/en not_active Expired - Lifetime
-
2004
- 2004-06-04 CN CN2009100074625A patent/CN101488527B/en active Active
- 2004-06-04 KR KR1020057022472A patent/KR101041089B1/en active IP Right Grant
- 2004-06-04 TW TW093116104A patent/TWI310861B/en active
- 2004-06-04 WO PCT/US2004/018037 patent/WO2005001800A2/en active Application Filing
- 2004-06-04 CN CNB2004800148925A patent/CN100472302C/en active Active
-
2010
- 2010-01-26 US US12/694,241 patent/US20100127267A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5191451A (en) * | 1990-04-20 | 1993-03-02 | Sharp Kabushiki Kaisha | Active matrix display device having drain electrodes of the pair of tfts being symmetrically formed with respect to the central plane to prevent the flicker due to the different parasitic capacitances |
US5459595A (en) * | 1992-02-07 | 1995-10-17 | Sharp Kabushiki Kaisha | Active matrix liquid crystal display |
US20020158997A1 (en) * | 1999-12-24 | 2002-10-31 | Tetsuo Fukami | Liquid crystal device |
Also Published As
Publication number | Publication date |
---|---|
CN1798999A (en) | 2006-07-05 |
CN101488527A (en) | 2009-07-22 |
US20100127267A1 (en) | 2010-05-27 |
WO2005001800A3 (en) | 2005-04-28 |
CN100472302C (en) | 2009-03-25 |
US7791679B2 (en) | 2010-09-07 |
KR101041089B1 (en) | 2011-06-13 |
TWI310861B (en) | 2009-06-11 |
US20040246393A1 (en) | 2004-12-09 |
CN101488527B (en) | 2012-04-25 |
KR20060015736A (en) | 2006-02-20 |
TW200528897A (en) | 2005-09-01 |
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