WO2005006406A3 - Methods of incorporating germanium within cmos process - Google Patents

Methods of incorporating germanium within cmos process Download PDF

Info

Publication number
WO2005006406A3
WO2005006406A3 PCT/US2004/007126 US2004007126W WO2005006406A3 WO 2005006406 A3 WO2005006406 A3 WO 2005006406A3 US 2004007126 W US2004007126 W US 2004007126W WO 2005006406 A3 WO2005006406 A3 WO 2005006406A3
Authority
WO
WIPO (PCT)
Prior art keywords
cmos process
methods
incorporating
deposition
layer
Prior art date
Application number
PCT/US2004/007126
Other languages
French (fr)
Other versions
WO2005006406A2 (en
Inventor
Iii Lawrence C Gunn
Giovanni Capellini
Maxime J Rattier
Thierry J Pinguet
Original Assignee
Luxtera Inc
Iii Lawrence C Gunn
Giovanni Capellini
Maxime J Rattier
Thierry J Pinguet
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luxtera Inc, Iii Lawrence C Gunn, Giovanni Capellini, Maxime J Rattier, Thierry J Pinguet filed Critical Luxtera Inc
Priority to EP04718583.0A priority Critical patent/EP1631980B1/en
Publication of WO2005006406A2 publication Critical patent/WO2005006406A2/en
Publication of WO2005006406A3 publication Critical patent/WO2005006406A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Abstract

Methods for deposition of a Ge layer during a CMOS process on a monolithic device are disclosed. The insertion of the Ge layer enables the conversion of light to electrical signals easily. As a result of this method, standard metals can be attached directly to the Ge in completing an electrical circuit. Vias can also be used to connect to the Ge layer. In a first aspect of the invention, a method comprises the step of incorporating the deposition of Ge at multiple temperatures in a standard CMOS process. In a second aspect of the invention, a method comprises the step of incorporating the deposition of poly-Ge growth in a standard CMOS process.
PCT/US2004/007126 2003-06-10 2004-03-08 Methods of incorporating germanium within cmos process WO2005006406A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP04718583.0A EP1631980B1 (en) 2003-06-10 2004-03-08 Methods of incorporating germanium within cmos process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/458,165 2003-06-10
US10/458,165 US6887773B2 (en) 2002-06-19 2003-06-10 Methods of incorporating germanium within CMOS process

Publications (2)

Publication Number Publication Date
WO2005006406A2 WO2005006406A2 (en) 2005-01-20
WO2005006406A3 true WO2005006406A3 (en) 2005-06-16

Family

ID=34061872

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/007126 WO2005006406A2 (en) 2003-06-10 2004-03-08 Methods of incorporating germanium within cmos process

Country Status (3)

Country Link
US (1) US6887773B2 (en)
EP (1) EP1631980B1 (en)
WO (1) WO2005006406A2 (en)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001292618A1 (en) * 2000-09-12 2002-03-26 Massachusetts Institute Of Technology Methods and products related to low molecular weight heparin
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6887773B2 (en) * 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7682947B2 (en) * 2003-03-13 2010-03-23 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US7329593B2 (en) * 2004-02-27 2008-02-12 Asm America, Inc. Germanium deposition
US7340709B1 (en) * 2004-07-08 2008-03-04 Luxtera, Inc. Method of generating a geometrical rule for germanium integration within CMOS
US7626179B2 (en) * 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
US7586097B2 (en) 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
US7791290B2 (en) 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2006125040A2 (en) * 2005-05-17 2006-11-23 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20070267722A1 (en) * 2006-05-17 2007-11-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US7678420B2 (en) * 2005-06-22 2010-03-16 Sandisk 3D Llc Method of depositing germanium films
US7626246B2 (en) 2005-07-26 2009-12-01 Amberwave Systems Corporation Solutions for integrated circuit integration of alternative active area materials
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070190794A1 (en) * 2006-02-10 2007-08-16 Virgin Islands Microsystems, Inc. Conductive polymers for the electroplating
US7443358B2 (en) 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
US20070200646A1 (en) * 2006-02-28 2007-08-30 Virgin Island Microsystems, Inc. Method for coupling out of a magnetic device
US7777250B2 (en) * 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US7613369B2 (en) * 2006-04-13 2009-11-03 Luxtera, Inc. Design of CMOS integrated germanium photodiodes
US20070252089A1 (en) * 2006-04-26 2007-11-01 Virgin Islands Microsystems, Inc. Charged particle acceleration apparatus and method
US7876793B2 (en) 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
US7557647B2 (en) * 2006-05-05 2009-07-07 Virgin Islands Microsystems, Inc. Heterodyne receiver using resonant structures
US7741934B2 (en) * 2006-05-05 2010-06-22 Virgin Islands Microsystems, Inc. Coupling a signal through a window
US7986113B2 (en) 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7746532B2 (en) 2006-05-05 2010-06-29 Virgin Island Microsystems, Inc. Electro-optical switching system and method
US7718977B2 (en) 2006-05-05 2010-05-18 Virgin Island Microsystems, Inc. Stray charged particle removal device
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US7728702B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
US7554083B2 (en) * 2006-05-05 2009-06-30 Virgin Islands Microsystems, Inc. Integration of electromagnetic detector on integrated chip
US7732786B2 (en) 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US7710040B2 (en) 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7723698B2 (en) * 2006-05-05 2010-05-25 Virgin Islands Microsystems, Inc. Top metal layer shield for ultra-small resonant structures
US7656094B2 (en) 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7452784B2 (en) * 2006-05-25 2008-11-18 International Business Machines Corporation Formation of improved SOI substrates using bulk semiconductor wafers
US7679067B2 (en) 2006-05-26 2010-03-16 Virgin Island Microsystems, Inc. Receiver array using shared electron beam
US7655934B2 (en) 2006-06-28 2010-02-02 Virgin Island Microsystems, Inc. Data on light bulb
WO2008030574A1 (en) 2006-09-07 2008-03-13 Amberwave Systems Corporation Defect reduction using aspect ratio trapping
WO2008036256A1 (en) * 2006-09-18 2008-03-27 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
US7560716B2 (en) * 2006-09-22 2009-07-14 Virgin Islands Microsystems, Inc. Free electron oscillator
US7799592B2 (en) * 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
US20080187018A1 (en) * 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US7361574B1 (en) * 2006-11-17 2008-04-22 Sharp Laboratories Of America, Inc Single-crystal silicon-on-glass from film transfer
US7659513B2 (en) 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
DE112008002387B4 (en) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure of a multijunction solar cell, method of forming a photonic device, photovoltaic multijunction cell and photovoltaic multijunction cell device,
US7791053B2 (en) 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
US7994066B1 (en) 2007-10-13 2011-08-09 Luxtera, Inc. Si surface cleaning for semiconductor circuits
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
JP5416212B2 (en) 2008-09-19 2014-02-12 台湾積體電路製造股▲ふん▼有限公司 Device formation by epitaxial layer growth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (en) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 Devices formed from a non-polar plane of a crystalline material and method of making the same
US20100252514A1 (en) * 2009-04-03 2010-10-07 Min-Ju Chung Foldable baseball equipment rack
US20120025195A1 (en) * 2010-07-28 2012-02-02 Massachusetts Institute Of Technology Confined Lateral Growth of Crystalline Material
JP5565735B2 (en) * 2010-11-12 2014-08-06 国立大学法人東北大学 Method for etching SOI substrate and method for manufacturing back-illuminated photoelectric conversion module on SOI substrate
US8633067B2 (en) 2010-11-22 2014-01-21 International Business Machines Corporation Fabricating photonics devices fully integrated into a CMOS manufacturing process
TWI413468B (en) * 2010-12-29 2013-10-21 Unimicron Technology Corp Method for forming embedded circuit
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
FR3007589B1 (en) * 2013-06-24 2015-07-24 St Microelectronics Crolles 2 PHOTONIC INTEGRATED CIRCUIT AND METHOD OF MANUFACTURE
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
US10571631B2 (en) 2015-01-05 2020-02-25 The Research Foundation For The State University Of New York Integrated photonics including waveguiding material
US9874693B2 (en) 2015-06-10 2018-01-23 The Research Foundation For The State University Of New York Method and structure for integrating photonics with CMOs
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
WO2019195441A1 (en) 2018-04-04 2019-10-10 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
TWI829761B (en) 2018-11-21 2024-01-21 紐約州立大學研究基金會 Photonics structure with integrated laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861059A (en) * 1995-08-23 1999-01-19 Nec Corporation Method for selective growth of silicon epitaxial film
US6271144B1 (en) * 1997-06-25 2001-08-07 France Telecom Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162431A (en) 1990-10-24 1992-06-05 Fujitsu Ltd Manufacture of semiconductor device
FR2749973B1 (en) * 1996-06-13 1998-09-25 France Telecom PROCESS FOR ETCHING THE GRID IN MOS TECHNOLOGY USING A SION-BASED HARD MASK
EP1192646B1 (en) * 1999-06-25 2008-08-13 Massachusetts Institute Of Technology Cyclic thermal anneal for dislocation reduction
FR2812764B1 (en) * 2000-08-02 2003-01-24 St Microelectronics Sa METHOD FOR MANUFACTURING SUBSTRATE OF SUBSTRATE-SELF-INSULATION OR SUBSTRATE-ON-VACUUM AND DEVICE OBTAINED
EP1328975B1 (en) * 2000-10-19 2011-04-27 Quantum Semiconductor, LLC Method of fabricating heterojunction photodiodes integrated with cmos
US6887773B2 (en) * 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861059A (en) * 1995-08-23 1999-01-19 Nec Corporation Method for selective growth of silicon epitaxial film
US6271144B1 (en) * 1997-06-25 2001-08-07 France Telecom Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics

Also Published As

Publication number Publication date
WO2005006406A2 (en) 2005-01-20
EP1631980B1 (en) 2018-08-15
US6887773B2 (en) 2005-05-03
US20040092104A1 (en) 2004-05-13
EP1631980A2 (en) 2006-03-08
EP1631980A4 (en) 2008-10-01

Similar Documents

Publication Publication Date Title
WO2005006406A3 (en) Methods of incorporating germanium within cmos process
EP1150172A3 (en) Method of removing antireflective compositions
EP2141749B8 (en) Back-illuminated photodetector and method for manufacturing the same
AU2003300263A1 (en) A method for depositing a metal layer on a semiconductor interconnect structure
AU2002361073A1 (en) Method and metal mold for manufacturing optical connector ferrule, optical connector ferrule manufactured by using the method, and optical connector and optical wiring system using the ferrule
AU2003234247A1 (en) Method for manufacturing clad components
WO2006123288A3 (en) Electrowetting element, lens system, electronic device and driving method
WO2006048427A8 (en) Method for producing chiral 8-(3-amino-piperidin-1-yl)-xanthines
EP1122778A3 (en) Circuit device and manufacturing method of circuit device
EP1398829A3 (en) Substrate and manufacturing method therefor
WO2004033365A3 (en) Method of forming a sensor for detecting motion
WO2009001461A1 (en) Method for manufacturing optical subassembly, optical subassembly, optical interconnect device, wdm oscillator and receiving circuit
WO2003094481A8 (en) Method for transferring user data objects
WO2004025739A3 (en) Method for producing an integrated pin diode and corresponding circuit
AU2001275273A1 (en) Method of forming copper interconnect capping layers with improved interface andadhesion
WO2005010949A3 (en) Solution to thermal budget
AU2003248343A1 (en) Process for producing semiconductor device
AU2003280857A1 (en) Backside-illuminated photodiode array, method for manufacturing same, and semiconductor device
EP1329755A3 (en) Passively aligned opto-electronic devices for parallel optics interconnections
WO2007034386A3 (en) Method of synchronizing the playback of an audio broadcast on a plurality of network output devices
WO2005123967A8 (en) Extraction of constituents from sugar beet chips
WO2001047034A3 (en) Optical transmitting and receiving device and a production method therefor
AU2002366917A1 (en) Etalon based optical circuit and method for its production
WO2004008522A3 (en) Method for producing a component having submerged connecting areas
WO2005103818A3 (en) Method for structuring at least one layer and electric component with structures from said layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004718583

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2004718583

Country of ref document: EP