WO2005012451A3 - Slurries and methods for chemical-mechanical planarization of copper - Google Patents
Slurries and methods for chemical-mechanical planarization of copper Download PDFInfo
- Publication number
- WO2005012451A3 WO2005012451A3 PCT/US2004/024143 US2004024143W WO2005012451A3 WO 2005012451 A3 WO2005012451 A3 WO 2005012451A3 US 2004024143 W US2004024143 W US 2004024143W WO 2005012451 A3 WO2005012451 A3 WO 2005012451A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- chemical
- mechanical planarization
- slurries
- methods
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04779276A EP1648974A4 (en) | 2003-07-30 | 2004-07-27 | Slurries and methods for chemical-mechanical planarization of copper |
JP2006521994A JP2007500943A (en) | 2003-07-30 | 2004-07-27 | Slurries and methods for chemically and mechanically smoothing copper |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/631,698 | 2003-07-30 | ||
US10/631,698 US20050022456A1 (en) | 2003-07-30 | 2003-07-30 | Polishing slurry and method for chemical-mechanical polishing of copper |
US10/846,718 US20050026444A1 (en) | 2003-07-30 | 2004-05-13 | Slurry and method for chemical-mechanical planarization of copper |
US10/846,718 | 2004-05-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005012451A2 WO2005012451A2 (en) | 2005-02-10 |
WO2005012451A3 true WO2005012451A3 (en) | 2006-05-18 |
Family
ID=34119220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/024143 WO2005012451A2 (en) | 2003-07-30 | 2004-07-27 | Slurries and methods for chemical-mechanical planarization of copper |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1648974A4 (en) |
JP (1) | JP2007500943A (en) |
KR (1) | KR20060118396A (en) |
WO (1) | WO2005012451A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
US8017524B2 (en) * | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
US6423125B1 (en) * | 1999-09-21 | 2002-07-23 | Fujimi Incorporated | Polishing composition |
US6471930B2 (en) * | 1997-10-31 | 2002-10-29 | Nanogram Corporation | Silicon oxide particles |
US6569222B2 (en) * | 2000-06-09 | 2003-05-27 | Harper International Corporation | Continuous single stage process for the production of molybdenum metal |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6330321A (en) * | 1986-07-19 | 1988-02-09 | Tokyo Tungsten Co Ltd | Molybdenum dioxide powder and its production |
US20090255189A1 (en) * | 1998-08-19 | 2009-10-15 | Nanogram Corporation | Aluminum oxide particles |
US6142855A (en) * | 1997-10-31 | 2000-11-07 | Canon Kabushiki Kaisha | Polishing apparatus and polishing method |
JP2000158331A (en) * | 1997-12-10 | 2000-06-13 | Canon Inc | Precise polishing method and device for substrate |
JPH11204474A (en) * | 1998-01-09 | 1999-07-30 | Sony Corp | Polishing of fluorine-containing film |
JP2000108004A (en) * | 1998-10-07 | 2000-04-18 | Canon Inc | Grinding device |
WO2001021724A1 (en) * | 1999-09-23 | 2001-03-29 | Rodel Holdings, Inc. | Slurry solution for polishing copper or tungsten |
WO2001032799A1 (en) * | 1999-11-04 | 2001-05-10 | Nanogram Corporation | Particle dispersions |
JP3490038B2 (en) * | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | Metal wiring formation method |
JP3945964B2 (en) * | 2000-06-01 | 2007-07-18 | 株式会社ルネサステクノロジ | Abrasive, polishing method and method for manufacturing semiconductor device |
JP3837277B2 (en) * | 2000-06-30 | 2006-10-25 | 株式会社東芝 | Chemical mechanical polishing aqueous dispersion for use in polishing copper and chemical mechanical polishing method |
JP4743941B2 (en) * | 2000-06-30 | 2011-08-10 | Jsr株式会社 | Aqueous dispersion for chemical mechanical polishing |
JP2002184734A (en) * | 2000-12-19 | 2002-06-28 | Tokuyama Corp | Manufacturing method of semiconductor device |
JP3507794B2 (en) * | 2000-12-25 | 2004-03-15 | 日本電気株式会社 | Method for manufacturing semiconductor device |
-
2004
- 2004-07-27 WO PCT/US2004/024143 patent/WO2005012451A2/en active Application Filing
- 2004-07-27 EP EP04779276A patent/EP1648974A4/en not_active Withdrawn
- 2004-07-27 JP JP2006521994A patent/JP2007500943A/en active Pending
- 2004-07-27 KR KR1020067000223A patent/KR20060118396A/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6471930B2 (en) * | 1997-10-31 | 2002-10-29 | Nanogram Corporation | Silicon oxide particles |
US6423125B1 (en) * | 1999-09-21 | 2002-07-23 | Fujimi Incorporated | Polishing composition |
US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
US6569222B2 (en) * | 2000-06-09 | 2003-05-27 | Harper International Corporation | Continuous single stage process for the production of molybdenum metal |
Non-Patent Citations (1)
Title |
---|
See also references of EP1648974A4 * |
Also Published As
Publication number | Publication date |
---|---|
WO2005012451A2 (en) | 2005-02-10 |
KR20060118396A (en) | 2006-11-23 |
EP1648974A4 (en) | 2008-04-23 |
JP2007500943A (en) | 2007-01-18 |
EP1648974A2 (en) | 2006-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200507097A (en) | Slurry and method for chemical-mechanical planarization of copper | |
WO2006076392A3 (en) | Polishing slurries and methods for chemical mechanical polishing | |
WO2004076574A3 (en) | Cmp composition comprising a sulfonic acid and a method for polishing noble metals | |
WO2009046311A3 (en) | Composite slurries of nano silicon carbide and alumina | |
WO2006081149A3 (en) | Novel polishing slurries and abrasive-free solutions having a multifunctional activator | |
WO2006049912A3 (en) | Cmp composition comprising surfactant | |
AU2003219741A1 (en) | Free radical-forming activator attached to solid and used to enhance cmp formulations | |
WO2006073924A3 (en) | Chemical mechanical polishing pad dresser | |
EP1103346A3 (en) | Method and apparatus for electrochemical-mechanical planarization | |
WO2005033234A3 (en) | Novel slurry for chemical mechanical polishing of metals | |
WO2004072199A3 (en) | Mixed-abrasive polishing composition and method for using the same | |
TW200734117A (en) | Friction reducing aid for CMP | |
MY144187A (en) | A cmp composition with a polymer additive for polishing noble metals | |
EP1095992A3 (en) | CMP slurry for planarizing metals | |
AU6112600A (en) | Methods and apparatuses for planarizing microelectronic substrate assemblies | |
WO2004044075A3 (en) | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents | |
TW200706619A (en) | Polishing composition and method for defect improvement by reduced particle stiction on copper surface | |
WO2004083328A3 (en) | Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles | |
WO2002102920A8 (en) | A silica and a silica-based slurry | |
MY149715A (en) | Method of polishing nickel-phosphorous | |
IL179570A0 (en) | Cmp composition for improved oxide removal rate | |
TW200512790A (en) | Slurry for CMP, polishing method and method of manufacturing semiconductor device | |
WO2007041199A3 (en) | Polishing slurries and methods for utilizing same | |
IL189504A0 (en) | Abrasive-free polishing method | |
TW200740973A (en) | Adjuvant for CMP slurry |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480021645.8 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2004779276 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067000223 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006521994 Country of ref document: JP |
|
WWP | Wipo information: published in national office |
Ref document number: 2004779276 Country of ref document: EP |