WO2005015308A3 - Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal - Google Patents

Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal Download PDF

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Publication number
WO2005015308A3
WO2005015308A3 PCT/CA2004/001010 CA2004001010W WO2005015308A3 WO 2005015308 A3 WO2005015308 A3 WO 2005015308A3 CA 2004001010 W CA2004001010 W CA 2004001010W WO 2005015308 A3 WO2005015308 A3 WO 2005015308A3
Authority
WO
WIPO (PCT)
Prior art keywords
high resolution
patterns
evaporated
fabrication process
resolution lithography
Prior art date
Application number
PCT/CA2004/001010
Other languages
French (fr)
Other versions
WO2005015308B1 (en
WO2005015308A2 (en
Inventor
Eric Lavallee
Jacques Beauvais
Dominique Drouin
Original Assignee
Quantiscript Inc
Eric Lavallee
Jacques Beauvais
Dominique Drouin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantiscript Inc, Eric Lavallee, Jacques Beauvais, Dominique Drouin filed Critical Quantiscript Inc
Publication of WO2005015308A2 publication Critical patent/WO2005015308A2/en
Publication of WO2005015308A3 publication Critical patent/WO2005015308A3/en
Publication of WO2005015308B1 publication Critical patent/WO2005015308B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

Abstract

The present invention relates to a method for fabricating a high resolution lithography mask, comprising providing a blank mask, coating the blank mask with a conductive layer, depositing a negative electron-sensitive resist layer on the conductive layer, applying an electron beam irradiation to the negative electron-sensitive resist layer to form patterns of non-soluble resist, dissolving the negative electron-sensitive resist layer to leave on the conductive layer only the patterns of non-soluble resist, plating an etch­resistant material on the conductive layer to invert the patterns, and conducting a directional etch through the patterns not protected by the plated etch-resistant material to transfer these patterns into the blank mask.
PCT/CA2004/001010 2003-08-08 2004-07-08 Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal WO2005015308A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49336803P 2003-08-08 2003-08-08
US60/493,368 2003-08-08

Publications (3)

Publication Number Publication Date
WO2005015308A2 WO2005015308A2 (en) 2005-02-17
WO2005015308A3 true WO2005015308A3 (en) 2005-07-28
WO2005015308B1 WO2005015308B1 (en) 2005-11-10

Family

ID=34135238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2004/001010 WO2005015308A2 (en) 2003-08-08 2004-07-08 Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal

Country Status (1)

Country Link
WO (1) WO2005015308A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100435285C (en) * 2006-02-09 2008-11-19 中国科学院微电子研究所 A method for preparing the nano-electrode with the negative electronic erosion-resisting agent
US20140014621A1 (en) * 2012-07-16 2014-01-16 Zhaoning Yu Analysis of pattern features
CN103436853B (en) * 2013-09-04 2016-03-16 苏州锦元纳米科技有限公司 Mix fluorine diamond like carbon film, its preparation method and comprise the impression block of this film
US20160041471A1 (en) * 2014-08-07 2016-02-11 International Business Machines Corporation Acidified conductive water for developer residue removal
WO2019200049A1 (en) * 2018-04-11 2019-10-17 Wisys Technology Foundation, Inc. Macromolecular sieves from semiconductor membranes for shape-based separation and sensing
RU205508U1 (en) * 2021-03-11 2021-07-19 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" EXPLOSIVE PHOTOLITHOGRAPHY MASK

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176817A (en) * 1981-04-24 1982-10-30 Citizen Watch Co Ltd Manufacture of flat type crystal oscillator
JPH10142438A (en) * 1996-11-15 1998-05-29 Nippon Telegr & Teleph Corp <Ntt> Production of high polymer optical waveguide
US5770096A (en) * 1995-07-18 1998-06-23 Samsung Aerospace Industries, Ltd. Pattern formation method
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US5846676A (en) * 1995-09-26 1998-12-08 Canon Kabushiki Kaisha Mask structure and exposure method and apparatus using the same
US6093520A (en) * 1994-09-09 2000-07-25 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College High aspect ratio microstructures and methods for manufacturing microstructures
KR20020031799A (en) * 2000-10-24 2002-05-03 박종섭 Method of forming a fuse and a wire in a semiconductor device
WO2003079112A1 (en) * 2002-03-15 2003-09-25 Quantiscript Inc. Method of producing an etch-resistant polymer structure using electron beam lithography

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176817A (en) * 1981-04-24 1982-10-30 Citizen Watch Co Ltd Manufacture of flat type crystal oscillator
US6093520A (en) * 1994-09-09 2000-07-25 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College High aspect ratio microstructures and methods for manufacturing microstructures
US5770096A (en) * 1995-07-18 1998-06-23 Samsung Aerospace Industries, Ltd. Pattern formation method
US5846676A (en) * 1995-09-26 1998-12-08 Canon Kabushiki Kaisha Mask structure and exposure method and apparatus using the same
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
JPH10142438A (en) * 1996-11-15 1998-05-29 Nippon Telegr & Teleph Corp <Ntt> Production of high polymer optical waveguide
KR20020031799A (en) * 2000-10-24 2002-05-03 박종섭 Method of forming a fuse and a wire in a semiconductor device
WO2003079112A1 (en) * 2002-03-15 2003-09-25 Quantiscript Inc. Method of producing an etch-resistant polymer structure using electron beam lithography

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10 31 August 1998 (1998-08-31) *

Also Published As

Publication number Publication date
WO2005015308B1 (en) 2005-11-10
WO2005015308A2 (en) 2005-02-17

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