WO2005020294A3 - “control of etch and deposition processes” - Google Patents

“control of etch and deposition processes” Download PDF

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Publication number
WO2005020294A3
WO2005020294A3 PCT/GB2004/003582 GB2004003582W WO2005020294A3 WO 2005020294 A3 WO2005020294 A3 WO 2005020294A3 GB 2004003582 W GB2004003582 W GB 2004003582W WO 2005020294 A3 WO2005020294 A3 WO 2005020294A3
Authority
WO
WIPO (PCT)
Prior art keywords
wavelength
etch
deposition processes
wavelengths
feature
Prior art date
Application number
PCT/GB2004/003582
Other languages
French (fr)
Other versions
WO2005020294A2 (en
Inventor
Michael Stephen Boger
David Heason
Hostis Florian L
David Robert Reeve
Mark Holbrook
Original Assignee
Boc Group Inc
Michael Stephen Boger
David Heason
Hostis Florian L
David Robert Reeve
Mark Holbrook
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Inc, Michael Stephen Boger, David Heason, Hostis Florian L, David Robert Reeve, Mark Holbrook filed Critical Boc Group Inc
Publication of WO2005020294A2 publication Critical patent/WO2005020294A2/en
Publication of WO2005020294A3 publication Critical patent/WO2005020294A3/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0035Testing
    • B81C99/004Testing during manufacturing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972Spectral analysis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Abstract

Etch or deposition processes in the manufacture of semiconductor devices, microelectronic machines and waveguides are controlled. The invention uses optical inspection to monitor structural features where the feature spacing (22) is so small in relation to the inspecting light probe wavelength that diffraction effects would normally prevent useful data being secured, A spectrally narrow illumination source is provided at a selected wavelength or wavelengths. The article being processed has an ordered feature structure. Each wavelength within the light probe is selected such that a whole number of wavelengths, or an integral fraction of a wavelength, compounds to a length within +/- 30 % of one of the feature spacings.
PCT/GB2004/003582 2003-08-20 2004-08-20 “control of etch and deposition processes” WO2005020294A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/644,274 2003-08-20
US10/644,274 US20050042777A1 (en) 2003-08-20 2003-08-20 Control of etch and deposition processes

Publications (2)

Publication Number Publication Date
WO2005020294A2 WO2005020294A2 (en) 2005-03-03
WO2005020294A3 true WO2005020294A3 (en) 2005-06-02

Family

ID=34194047

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2004/003582 WO2005020294A2 (en) 2003-08-20 2004-08-20 “control of etch and deposition processes”

Country Status (2)

Country Link
US (1) US20050042777A1 (en)
WO (1) WO2005020294A2 (en)

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DE102004018454A1 (en) * 2004-04-16 2005-11-03 Infineon Technologies Ag Method and device for monitoring the etching process of a regular depth structure in a semiconductor substrate
US7289256B2 (en) 2004-09-27 2007-10-30 Idc, Llc Electrical characterization of interferometric modulators
US20060176487A1 (en) * 2004-09-27 2006-08-10 William Cummings Process control monitors for interferometric modulators
US7417735B2 (en) * 2004-09-27 2008-08-26 Idc, Llc Systems and methods for measuring color and contrast in specular reflective devices
US7636151B2 (en) * 2006-01-06 2009-12-22 Qualcomm Mems Technologies, Inc. System and method for providing residual stress test structures
US7423287B1 (en) 2007-03-23 2008-09-09 Qualcomm Mems Technologies, Inc. System and method for measuring residual stress
JP2008251562A (en) * 2007-03-29 2008-10-16 Sharp Corp Semiconductor laser element and forming method therefor
US8103328B2 (en) * 2007-10-01 2012-01-24 Quantum Applied Science And Research, Inc. Self-locating sensor mounting apparatus
CA2715283A1 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same
WO2009102620A2 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies Inc. Methods for measurement and characterization of interferometric modulators
US8115471B2 (en) * 2008-02-11 2012-02-14 Qualcomm Mems Technologies, Inc. Methods for measurement and characterization of interferometric modulators
US8027800B2 (en) * 2008-06-24 2011-09-27 Qualcomm Mems Technologies, Inc. Apparatus and method for testing a panel of interferometric modulators
EP2389459B1 (en) * 2009-01-21 2014-03-26 George Atanasoff Methods and systems for control of a surface modification process
US8035812B2 (en) * 2009-03-24 2011-10-11 Qualcomm Mems Technologies, Inc. System and method for measuring display quality with a hyperspectral imager
GB201119598D0 (en) * 2011-11-14 2011-12-28 Spts Technologies Ltd Etching apparatus and methods
CN110926404A (en) * 2019-12-10 2020-03-27 江西富益特显示技术有限公司 Flatness detection equipment for polaroid of display screen
CN117270317B (en) * 2023-11-20 2024-02-09 深圳市龙图光罩股份有限公司 Dry etching device and method with assistance of graph

Citations (7)

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US4039370A (en) * 1975-06-23 1977-08-02 Rca Corporation Optically monitoring the undercutting of a layer being etched
US4141780A (en) * 1977-12-19 1979-02-27 Rca Corporation Optically monitoring the thickness of a depositing layer
US4179622A (en) * 1977-06-23 1979-12-18 International Business Machines Corporation Method and system for in situ control of material removal processes
EP0352740A2 (en) * 1988-07-28 1990-01-31 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing
EP0462599A2 (en) * 1990-06-19 1991-12-27 Applied Materials, Inc. Apparatus and method for etch rate monitoring
US5432607A (en) * 1993-02-22 1995-07-11 International Business Machines Corporation Method and apparatus for inspecting patterned thin films using diffracted beam ellipsometry
US20030000644A1 (en) * 2001-06-27 2003-01-02 Ramkumar Subramanian Using scatterometry for etch end points for dual damascene process

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FR2718231B1 (en) * 1994-04-05 1996-06-21 Sofie Method and device for in situ quantification of the morphology and thickness in a localized area of a surface layer being treated on a thin layer structure.
US5663076A (en) * 1995-08-08 1997-09-02 Lsi Logic Corporation Automating photolithography in the fabrication of integrated circuits
GB9616853D0 (en) * 1996-08-10 1996-09-25 Vorgem Limited An improved thickness monitor
US5996415A (en) * 1997-04-30 1999-12-07 Sensys Instruments Corporation Apparatus and method for characterizing semiconductor wafers during processing
US6181143B1 (en) * 1999-05-10 2001-01-30 International Business Machines Corporation Method for performing a high-temperature burn-in test on integrated circuits
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US6812045B1 (en) * 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039370A (en) * 1975-06-23 1977-08-02 Rca Corporation Optically monitoring the undercutting of a layer being etched
US4179622A (en) * 1977-06-23 1979-12-18 International Business Machines Corporation Method and system for in situ control of material removal processes
US4141780A (en) * 1977-12-19 1979-02-27 Rca Corporation Optically monitoring the thickness of a depositing layer
EP0352740A2 (en) * 1988-07-28 1990-01-31 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing
EP0462599A2 (en) * 1990-06-19 1991-12-27 Applied Materials, Inc. Apparatus and method for etch rate monitoring
US5432607A (en) * 1993-02-22 1995-07-11 International Business Machines Corporation Method and apparatus for inspecting patterned thin films using diffracted beam ellipsometry
US20030000644A1 (en) * 2001-06-27 2003-01-02 Ramkumar Subramanian Using scatterometry for etch end points for dual damascene process

Non-Patent Citations (1)

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RAYMOND C J ET AL: "SCATTEROMETRY FOR THE MEASUREMENT OF METAL FEATURES", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3998, 2000, pages 135 - 146, XP000979976, ISSN: 0277-786X *

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Publication number Publication date
US20050042777A1 (en) 2005-02-24
WO2005020294A2 (en) 2005-03-03

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