WO2005022120A2 - Process for producing nanocrystals and nanocrystals produced thereby - Google Patents
Process for producing nanocrystals and nanocrystals produced therebyInfo
- Publication number
- WO2005022120A2 WO2005022120A2 PCT/US2004/007138 US2004007138W WO2005022120A2 WO 2005022120 A2 WO2005022120 A2 WO 2005022120A2 US 2004007138 W US2004007138 W US 2004007138W WO 2005022120 A2 WO2005022120 A2 WO 2005022120A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- temperature
- nanocrystals
- precursor
- precursor mixture
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006509242A JP2006521278A (en) | 2003-03-11 | 2004-03-10 | Process for producing nanocrystals and nanocrystals produced thereby |
EP04775831A EP1601612A2 (en) | 2003-03-11 | 2004-03-10 | Process for producing nanocrystals and nanocrystals produced thereby |
CA002518352A CA2518352A1 (en) | 2003-03-11 | 2004-03-10 | Process for producing nanocrystals and nanocrystals produced thereby |
AU2004269297A AU2004269297A1 (en) | 2003-03-11 | 2004-03-10 | Process for producing nanocrystals and nanocrystals produced thereby |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45319803P | 2003-03-11 | 2003-03-11 | |
US60/453,198 | 2003-03-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005022120A2 true WO2005022120A2 (en) | 2005-03-10 |
WO2005022120A3 WO2005022120A3 (en) | 2005-04-28 |
Family
ID=34272394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/007138 WO2005022120A2 (en) | 2003-03-11 | 2004-03-10 | Process for producing nanocrystals and nanocrystals produced thereby |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1601612A2 (en) |
JP (1) | JP2006521278A (en) |
AU (1) | AU2004269297A1 (en) |
CA (1) | CA2518352A1 (en) |
WO (1) | WO2005022120A2 (en) |
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US7057881B2 (en) | 2004-03-18 | 2006-06-06 | Nanosys, Inc | Nanofiber surface based capacitors |
US7195733B2 (en) | 2004-04-27 | 2007-03-27 | The Board Of Trustees Of The University Of Illinois | Composite patterning devices for soft lithography |
US7267875B2 (en) | 2004-06-08 | 2007-09-11 | Nanosys, Inc. | Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same |
US7365395B2 (en) | 2004-09-16 | 2008-04-29 | Nanosys, Inc. | Artificial dielectrics using nanostructures |
US7374807B2 (en) | 2004-01-15 | 2008-05-20 | Nanosys, Inc. | Nanocrystal doped matrixes |
US7501315B2 (en) | 2004-06-08 | 2009-03-10 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7557028B1 (en) | 2004-07-28 | 2009-07-07 | Nanosys, Inc. | Process for group III-V semiconductor nanostructure synthesis and compositions made using same |
US7645397B2 (en) | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
US20100159248A1 (en) * | 2008-12-19 | 2010-06-24 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystals and preparation methods thereof |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7794600B1 (en) | 2004-08-27 | 2010-09-14 | Nanosys, Inc. | Purification of nanocrystal solutions by chromatography |
US7968273B2 (en) | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8012448B2 (en) | 2009-07-13 | 2011-09-06 | University Of Southern California | Synthesis of metal chalcogenide nanocrystals using organodichalcogenide reagents |
US8283412B2 (en) | 2009-05-01 | 2012-10-09 | Nanosys, Inc. | Functionalized matrices for dispersion of nanostructures |
US8343575B2 (en) | 2008-12-30 | 2013-01-01 | Nanosys, Inc. | Methods for encapsulating nanocrystals and resulting compositions |
US8364243B2 (en) | 2008-04-30 | 2013-01-29 | Nanosys, Inc. | Non-fouling surfaces for reflective spheres |
WO2013070320A1 (en) * | 2011-11-09 | 2013-05-16 | Pacific Light Technologies Corp. | Semiconductor structure having nanocrystalline core and nanocrystalline shell |
US8504305B2 (en) | 1998-12-17 | 2013-08-06 | Hach Company | Anti-terrorism water quality monitoring system |
US8540889B1 (en) | 2008-11-19 | 2013-09-24 | Nanosys, Inc. | Methods of generating liquidphobic surfaces |
US8558311B2 (en) | 2004-09-16 | 2013-10-15 | Nanosys, Inc. | Dielectrics using substantially longitudinally oriented insulated conductive wires |
WO2013173409A1 (en) * | 2012-05-15 | 2013-11-21 | Qd Vision, Inc. | Semiconductor nanocrystals and methods of preparation |
US8889457B2 (en) | 2012-12-13 | 2014-11-18 | Pacific Light Technologies Corp. | Composition having dispersion of nano-particles therein and methods of fabricating same |
US8920619B2 (en) | 2003-03-19 | 2014-12-30 | Hach Company | Carbon nanotube sensor |
US8958917B2 (en) | 1998-12-17 | 2015-02-17 | Hach Company | Method and system for remote monitoring of fluid quality and treatment |
US8999851B2 (en) | 2007-12-14 | 2015-04-07 | Oned Material Llc | Methods for formation of substrate elements |
US9005480B2 (en) | 2013-03-14 | 2015-04-14 | Nanosys, Inc. | Method for solventless quantum dot exchange |
US9056783B2 (en) | 1998-12-17 | 2015-06-16 | Hach Company | System for monitoring discharges into a waste water collection system |
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US9136428B2 (en) | 2006-11-21 | 2015-09-15 | Qd Vision, Inc. | Nanocrystals including a group IIIA element and a group VA element, method, composition, device and other products |
US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
US9153734B2 (en) | 2011-11-09 | 2015-10-06 | Pacific Light Technologies Corp. | Semiconductor structure having nanocrystalline core and nanocrystalline shell |
US9169435B2 (en) | 2012-07-02 | 2015-10-27 | Nanosys, Inc. | Highly luminescent nanostructures and methods of producing same |
US9199842B2 (en) | 2008-12-30 | 2015-12-01 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
US9425365B2 (en) | 2012-08-20 | 2016-08-23 | Pacific Light Technologies Corp. | Lighting device having highly luminescent quantum dots |
US9543142B2 (en) | 2011-08-19 | 2017-01-10 | Qd Vision, Inc. | Semiconductor nanocrystals and methods |
US9647171B2 (en) | 2009-05-12 | 2017-05-09 | The Board Of Trustees Of The University Of Illinois | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
US9677001B2 (en) | 2007-03-19 | 2017-06-13 | Nanosys, Inc. | Light-emitting diode (LED) devices comprising nanocrystals |
US9691873B2 (en) | 2011-12-01 | 2017-06-27 | The Board Of Trustees Of The University Of Illinois | Transient devices designed to undergo programmable transformations |
US9723122B2 (en) | 2009-10-01 | 2017-08-01 | Mc10, Inc. | Protective cases with integrated electronics |
US9761444B2 (en) | 2004-06-04 | 2017-09-12 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US9765934B2 (en) | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
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US9997706B2 (en) | 2010-12-08 | 2018-06-12 | Samsung Research America, Inc. | Semiconductor nanocrystals and methods of preparation |
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Citations (3)
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US5505928A (en) * | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
US6306736B1 (en) * | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
US20030214699A1 (en) * | 2002-05-15 | 2003-11-20 | Uri Banin | Method for producing inorganic semiconductor nanocrystalline rods and their use |
-
2004
- 2004-03-10 WO PCT/US2004/007138 patent/WO2005022120A2/en not_active Application Discontinuation
- 2004-03-10 JP JP2006509242A patent/JP2006521278A/en not_active Withdrawn
- 2004-03-10 EP EP04775831A patent/EP1601612A2/en not_active Withdrawn
- 2004-03-10 CA CA002518352A patent/CA2518352A1/en not_active Abandoned
- 2004-03-10 AU AU2004269297A patent/AU2004269297A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5505928A (en) * | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
US6306736B1 (en) * | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
US20030214699A1 (en) * | 2002-05-15 | 2003-11-20 | Uri Banin | Method for producing inorganic semiconductor nanocrystalline rods and their use |
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US10355113B2 (en) | 2004-06-04 | 2019-07-16 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
US10204864B2 (en) | 2004-06-04 | 2019-02-12 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
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US9761444B2 (en) | 2004-06-04 | 2017-09-12 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US9768086B2 (en) | 2004-06-04 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US7267875B2 (en) | 2004-06-08 | 2007-09-11 | Nanosys, Inc. | Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same |
US7501315B2 (en) | 2004-06-08 | 2009-03-10 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7585564B2 (en) | 2004-06-08 | 2009-09-08 | Nanosys, Inc. | Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
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