WO2005022266A3 - Immersion medium bubble elimination in immersion lithography - Google Patents

Immersion medium bubble elimination in immersion lithography Download PDF

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Publication number
WO2005022266A3
WO2005022266A3 PCT/US2004/028371 US2004028371W WO2005022266A3 WO 2005022266 A3 WO2005022266 A3 WO 2005022266A3 US 2004028371 W US2004028371 W US 2004028371W WO 2005022266 A3 WO2005022266 A3 WO 2005022266A3
Authority
WO
WIPO (PCT)
Prior art keywords
immersion
immersion medium
bubble elimination
lithography
medium bubble
Prior art date
Application number
PCT/US2004/028371
Other languages
French (fr)
Other versions
WO2005022266A2 (en
Inventor
Adam R Pawloski
Amr Y Ado
Gilles R Amblard
Bruno M Lafontaine
Ivan Lalovic
Harry J Levinson
Jeffrey A Schefske
Cyrus E Tabery
Frank Tsai
Original Assignee
Advanced Micro Devices Inc
Adam R Pawloski
Amr Y Ado
Gilles R Amblard
Bruno M Lafontaine
Ivan Lalovic
Harry J Levinson
Jeffrey A Schefske
Cyrus E Tabery
Frank Tsai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Adam R Pawloski, Amr Y Ado, Gilles R Amblard, Bruno M Lafontaine, Ivan Lalovic, Harry J Levinson, Jeffrey A Schefske, Cyrus E Tabery, Frank Tsai filed Critical Advanced Micro Devices Inc
Publication of WO2005022266A2 publication Critical patent/WO2005022266A2/en
Publication of WO2005022266A3 publication Critical patent/WO2005022266A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Abstract

A method of operating an immersion lithography system (26), including steps of immersing at least a portion of a wafer (12) to be exposed in an immersion medium (24), wherein the immersion medium comprises at least one bubble (28); directing an ultrasonic wave (36) through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern (22) by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system (30, 32, 34) for an immersion lithography system (26).
PCT/US2004/028371 2003-09-02 2004-08-31 Immersion medium bubble elimination in immersion lithography WO2005022266A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/653,844 2003-09-02
US10/653,844 US7014966B2 (en) 2003-09-02 2003-09-02 Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems

Publications (2)

Publication Number Publication Date
WO2005022266A2 WO2005022266A2 (en) 2005-03-10
WO2005022266A3 true WO2005022266A3 (en) 2005-09-01

Family

ID=34217989

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/028371 WO2005022266A2 (en) 2003-09-02 2004-08-31 Immersion medium bubble elimination in immersion lithography

Country Status (3)

Country Link
US (1) US7014966B2 (en)
TW (1) TWI371659B (en)
WO (1) WO2005022266A2 (en)

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US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9568840B2 (en) 2004-04-14 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3977324B2 (en) * 2002-11-12 2007-09-19 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
SG2011031200A (en) * 2002-12-10 2014-09-26 Nippon Kogaku Kk Exposure apparatus and device manufacturing method
EP1571694A4 (en) * 2002-12-10 2008-10-15 Nikon Corp Exposure apparatus and method for manufacturing device
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
EP1571698A4 (en) * 2002-12-10 2006-06-21 Nikon Corp Exposure apparatus, exposure method and method for manufacturing device
SG150388A1 (en) 2002-12-10 2009-03-30 Nikon Corp Exposure apparatus and method for producing device
JP4352874B2 (en) * 2002-12-10 2009-10-28 株式会社ニコン Exposure apparatus and device manufacturing method
DE10261775A1 (en) * 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Device for the optical measurement of an imaging system
US7684134B2 (en) * 2003-01-21 2010-03-23 The General Hospital Corporation Microscope objectives
KR20180126102A (en) * 2003-02-26 2018-11-26 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
KR101345474B1 (en) * 2003-03-25 2013-12-27 가부시키가이샤 니콘 Exposure system and device production method
ATE426914T1 (en) * 2003-04-07 2009-04-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR PRODUCING AN APPARATUS
KR20110104084A (en) 2003-04-09 2011-09-21 가부시키가이샤 니콘 Immersion lithography fluid control system
JP4656057B2 (en) * 2003-04-10 2011-03-23 株式会社ニコン Electro-osmotic element for immersion lithography equipment
EP1611482B1 (en) * 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
EP1611486B1 (en) 2003-04-10 2016-03-16 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
WO2004090634A2 (en) * 2003-04-10 2004-10-21 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
SG2013077797A (en) * 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
WO2004092830A2 (en) * 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG139736A1 (en) * 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
KR101369582B1 (en) 2003-04-17 2014-03-04 가부시키가이샤 니콘 Optical arrangement of autofocus elements for use with immersion lithography
CN100437358C (en) * 2003-05-15 2008-11-26 株式会社尼康 Exposure apparatus and device manufacturing method
TWI470671B (en) 2003-05-23 2015-01-21 尼康股份有限公司 Exposure method and exposure apparatus, and device manufacturing method
TW201806001A (en) 2003-05-23 2018-02-16 尼康股份有限公司 Exposure device and device manufacturing method
KR20110110320A (en) * 2003-05-28 2011-10-06 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
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KR101290021B1 (en) 2003-06-13 2013-07-30 가부시키가이샤 니콘 Exposure method, substrate stage, exposure apparatus and method for manufacturing device
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
KR101931923B1 (en) 2003-06-19 2018-12-21 가부시키가이샤 니콘 Exposure device and device producing method
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP2007527615A (en) * 2003-07-01 2007-09-27 株式会社ニコン Method of using isotope specific fluid as optical element
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US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
CN102043350B (en) 2003-07-28 2014-01-29 株式会社尼康 Exposure apparatus, device manufacturing method, and control method of exposure apparatus
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
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TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
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JP4444920B2 (en) * 2003-09-19 2010-03-31 株式会社ニコン Exposure apparatus and device manufacturing method
EP2312395B1 (en) * 2003-09-29 2015-05-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
EP1672681B8 (en) 2003-10-08 2011-09-21 Miyagi Nikon Precision Co., Ltd. Exposure apparatus, substrate carrying method, exposure method, and method for producing device
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd Substrate transporting apparatus and method, exposure apparatus and method, and device producing method
JP2005136364A (en) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd Substrate carrying device, exposure device and device manufacturing method
TWI598934B (en) 2003-10-09 2017-09-11 Nippon Kogaku Kk Exposure apparatus, exposure method, and device manufacturing method
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP4295712B2 (en) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus and apparatus manufacturing method
KR20170107102A (en) 2003-12-03 2017-09-22 가부시키가이샤 니콘 Exposure apparatus, exposure method, device producing method, and optical component
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
JPWO2005057635A1 (en) * 2003-12-15 2007-07-05 株式会社ニコン Projection exposure apparatus, stage apparatus, and exposure method
EP1699073B1 (en) 2003-12-15 2010-12-08 Nikon Corporation Stage system, exposure apparatus and exposure method
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4843503B2 (en) * 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー Microlithographic projection exposure apparatus and measuring apparatus for projection lens
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101227211B1 (en) 2004-02-03 2013-01-28 가부시키가이샤 니콘 Exposure apparatus and method of producing device
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076322A1 (en) * 2004-02-09 2005-08-18 Yoshihiko Okamoto Aligner and semiconductor device manufacturing method using the aligner
KR101250155B1 (en) * 2004-03-25 2013-04-05 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
US8054448B2 (en) * 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101819386B (en) 2004-06-09 2013-10-09 尼康股份有限公司 Exposure apparatus and device manufacturing method
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
KR20070048164A (en) * 2004-08-18 2007-05-08 가부시키가이샤 니콘 Exposure apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
US7158896B1 (en) * 2004-11-01 2007-01-02 Advanced Micro Devices, Inc. Real time immersion medium control using scatterometry
US7414699B2 (en) * 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602006012746D1 (en) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithographic apparatus and manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8692973B2 (en) * 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US20090262316A1 (en) * 2005-01-31 2009-10-22 Nikon Corporation Exposure apparatus and method for producing device
US7282701B2 (en) * 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US7837762B2 (en) 2005-05-17 2010-11-23 Freescale Semiconductor, Inc. Method of distancing a bubble and bubble displacement apparatus
US8475715B2 (en) * 2005-08-12 2013-07-02 Bioscale, Inc. Resonant sensor systems and methods with reduced gas interference
IL181484A0 (en) * 2007-02-21 2007-07-04 Haim Shlezinger A method for evaluation of a gemstone
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
DE102005053751B4 (en) * 2005-11-10 2008-08-07 Taiwan Semiconductor Mfg. Co., Ltd. Megasound Immersion Lithography Exposure Device and Method
NL1030447C2 (en) * 2005-11-16 2007-05-21 Taiwan Semiconductor Mfg Immersion exposure lithography equipment for manufacturing semiconductor, has mega sonic plate cooperating with optical transmission chamber for generating Sonic waves through liquid exposure
KR100724082B1 (en) 2005-11-18 2007-06-04 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Megasonic immersion lithography exposure apparatus and method
FR2893725B1 (en) * 2005-11-21 2009-05-29 Taiwan Semiconductor Mfg DEVICE AND METHOD FOR EXPOSING MEGASONIC IMMERSION LITHOGRAPHY
SG132531A1 (en) * 2005-11-22 2007-06-28 Taiwan Semiconductor Mfg Megasonic immersion lithography exposure apparatus and method
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (en) * 2005-12-06 2007-10-22 엘지전자 주식회사 Power supply apparatus and method for line conection type fuel cell system
DE102006021797A1 (en) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optical imaging device with thermal damping
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US20070296937A1 (en) * 2006-06-26 2007-12-27 International Business Machines Corporation Illumination light in immersion lithography stepper for particle or bubble detection
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US9013672B2 (en) * 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
TWI389551B (en) * 2007-08-09 2013-03-11 Mstar Semiconductor Inc Gamma correction apparatus
KR101448152B1 (en) * 2008-03-26 2014-10-07 삼성전자주식회사 Distance measuring sensor having vertical photogate and three dimensional color image sensor having the same
JP5097166B2 (en) * 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus and method of operating the apparatus
US8946514B2 (en) * 2009-12-28 2015-02-03 E.I. Du Pont De Nemours And Company Sorghum fertility restorer genotypes and methods of marker-assisted selection
NL2006272A (en) * 2010-05-04 2011-11-07 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
US8476004B2 (en) 2011-06-27 2013-07-02 United Microelectronics Corp. Method for forming photoresist patterns
US8701052B1 (en) 2013-01-23 2014-04-15 United Microelectronics Corp. Method of optical proximity correction in combination with double patterning technique
US8627242B1 (en) 2013-01-30 2014-01-07 United Microelectronics Corp. Method for making photomask layout
US9230812B2 (en) 2013-05-22 2016-01-05 United Microelectronics Corp. Method for forming semiconductor structure having opening
DE102017217192A1 (en) * 2017-09-27 2019-03-28 Carl Zeiss Microscopy Gmbh Immersion matrix, its use and immersion device
WO2019111802A1 (en) * 2017-12-04 2019-06-13 株式会社島津製作所 Fine bubble removing method and fine bubble removing device, and bubble diameter distribution measuring method and bubble diameter distribution measuring device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4670637A (en) * 1985-02-11 1987-06-02 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for transmitting a laser signal through fog
US5610683A (en) * 1992-11-27 1997-03-11 Canon Kabushiki Kaisha Immersion type projection exposure apparatus
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
EP1489461A1 (en) * 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3239998A (en) 1962-05-02 1966-03-15 Eastman Kodak Co Ultrasonic degassing of multiple emulsions in a vertical unit
US3904392A (en) 1973-03-16 1975-09-09 Eastman Kodak Co Method of and apparatus for debubbling liquids
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
US4889603A (en) 1988-12-09 1989-12-26 Copytele, Inc. Method of eliminating gas bubbles in an electrophoretic display
US5372634A (en) 1993-06-01 1994-12-13 The United States Of America As Represented By The Secretary Of The Navy Sonic apparatus for degassing liquids
US5834625A (en) 1996-08-21 1998-11-10 Eastman Kodak Company Apparatus and method for debubbling a discrete sample of liquid
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US6133995A (en) 1997-05-09 2000-10-17 Sysmex Corporation Particle measuring apparatus
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6241827B1 (en) 1998-02-17 2001-06-05 Tokyo Electron Limited Method for cleaning a workpiece
JP3833810B2 (en) 1998-03-04 2006-10-18 株式会社日立製作所 Semiconductor manufacturing method, plasma processing method and apparatus
US6648943B2 (en) * 2001-12-21 2003-11-18 Eastman Kodak Company Integrated use of deaeration methods to reduce bubbles and liquid waste
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7061578B2 (en) * 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4670637A (en) * 1985-02-11 1987-06-02 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for transmitting a laser signal through fog
US5610683A (en) * 1992-11-27 1997-03-11 Canon Kabushiki Kaisha Immersion type projection exposure apparatus
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
EP1489461A1 (en) * 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method

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* Cited by examiner, † Cited by third party
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US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US9285686B2 (en) 2003-07-31 2016-03-15 Asml Netherlands B.V. Lithographic apparatus involving an immersion liquid supply system with an aperture
US9568840B2 (en) 2004-04-14 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9436096B2 (en) 2005-12-30 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947631B2 (en) 2005-12-30 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply

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