WO2005022654A2 - Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device - Google Patents

Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device Download PDF

Info

Publication number
WO2005022654A2
WO2005022654A2 PCT/JP2004/011713 JP2004011713W WO2005022654A2 WO 2005022654 A2 WO2005022654 A2 WO 2005022654A2 JP 2004011713 W JP2004011713 W JP 2004011713W WO 2005022654 A2 WO2005022654 A2 WO 2005022654A2
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
epitaxial structure
led
multilayer epitaxial
substrate
Prior art date
Application number
PCT/JP2004/011713
Other languages
French (fr)
Other versions
WO2005022654A3 (en
Inventor
Hideo Nagai
Original Assignee
Matsushita Electric Industrial Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34279545&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2005022654(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP2003305402A external-priority patent/JP4160881B2/en
Priority claimed from JP2003340020A external-priority patent/JP4116960B2/en
Application filed by Matsushita Electric Industrial Co.,Ltd. filed Critical Matsushita Electric Industrial Co.,Ltd.
Priority to EP04748309.4A priority Critical patent/EP1658642B1/en
Priority to US10/567,510 priority patent/US7675075B2/en
Publication of WO2005022654A2 publication Critical patent/WO2005022654A2/en
Publication of WO2005022654A3 publication Critical patent/WO2005022654A3/en
Priority to US11/969,102 priority patent/US8324632B2/en
Priority to US12/615,600 priority patent/US8207548B2/en
Priority to US13/651,101 priority patent/US8692285B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/82001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/82005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a semiconductor light emitting device such as a light emitting diode chip (LED chip) , and also to a light emitting module, a lighting apparatus and a display element using the semiconductor light emitting device, and a manufacturing method of the semiconductor light emitting device.
  • the present invention particularly relates to a semiconductor light emitting device that emits light of a desired color using a phosphor.
  • a common white LED at present includes a combination of an LED bare chip emitting blue light and a phosphor excited by the blue light to emit yellow light, so that the blue light and the yellow light mix together to generate white light.
  • a manufacturing method of this white LED includes a wafer fabrication process in which the LED bare chip is obtained and an assembly process in which the LED bare chip is packaged.
  • the LED bare chip is typically obtained by forming a multilayer epitaxial structure including a light emitting layer on a light-transmitting substrate, such as a sapphire substrate by epitaxial growth.
  • a light-transmitting substrate such as a sapphire substrate
  • an anode electrode and a cathode electrode are formed on a main surface of the multilayer epitaxial structure which faces away from the sapphire substrate.
  • the LED bare chip is mounted on a lead frame, a printed-wiring board or the like since the LED bare chip alone can not be put to use. After this, a resin mixed with a phosphor material is dropped onto the mounted LED bare chip and cured, to form a phosphor film.
  • the white LED is tested for its electrical and optical performance before shipped.
  • the white LED manufactured in the above-descried manner has poor optical performance.
  • the phosphor film is formed in such a manner that the resin mixed with the phosphor material is dropped onto the LED bare chip and then cured. Therefore, it is highly likely that the thickness of the phosphor film in the white LED is not equal to a designed thickness.
  • a color temperature of the white light emitted by the white LED is determined by a ratio between a quantity of the blue light and a quantity of the yellow light.
  • the phosphor film tends to be formed at an uneven thickness . If the phosphor film is formed at an inappropriately uneven thickness, unevenness of color occurs. White LEDs with the above-mentioned defects are rejected as a result of the optical performance test. This results in a low ratio of accepted finished products (white LEDs) to all finished products.
  • an LED bare chip is mounted on a substrate (an auxiliary mounting substrate) that has a slightly larger surface area than the LED bare chip, with a multilayer epitaxial structure facing downwards (i.e. a sapphire substrate of the LED bare chip faces upwards) .
  • a phosphor film is then formed on and around the LED bare chip mounted on the auxiliary mounting substrate.
  • an object of the present invention is to provide a semiconductor light emitting device which can be tested for its optical performance before packaged without increasing a size of the semiconductor light emitting device.
  • the object includes provision of a manufacturing method of the semiconductor light emitting device, and a light emitting module, a lighting apparatus and a display element using the semiconductor light emitting device.
  • a semiconductor light emitting device including: a base substrate; a multilayer epitaxial structure that includes a first conductive layer, a second conductive layer and a light emitting layer that is formed between the first conductive layer and the second conductive layer, where the multilayer epitaxial structure is formed on the base substrate in such a manner that the first conductive layer is positioned closer to the base substrate than the second conductive layer is; and a phosphor film that covers a main surface of the multilayer epitaxial structure which faces away from the base substrate, and every side surface of the multilayer epitaxial structure from a layer including the main surface to include at least the light emitting layer.
  • the semiconductor light emitting device which is to be mounted on a lead frame or a printed-wiring board, has the phosphor film that covers the multilayer epitaxial structure including the light emitting layer.
  • the semiconductor light emitting device can be tested for its optical performance, such as unevenness of color, before mounted. In this way, a ratio of accepted finished products to all finished products can be improved without requiring an additional member such as an auxiliary mounting substrate as in the related art. Therefore, a size of the semiconductor light emitting device ' does not increase.
  • the multilayer epitaxial structure may be epitaxially grown on the base substrate.
  • the multilayer epitaxial structure may be first epitaxially grown on a single-crystal substrate, and then transferred to the base substrate.
  • the multilayer epitaxial structure may be shaped as a cylinder having a substantially circular or N-sided polygonal cross-section, where N is an integer equal to or larger than five.
  • a spot shape of light emitted from the semiconductor light emitting device is like a circle or ⁇ J-sided polygon, where N is an integer equal to or larger than five.
  • the spot shape is more like a circle than a rectangle.
  • the object can be achieved by a light emitting module, a lighting apparatus and a display element using the above-described semiconductor light emitting device.
  • the ratio of accepted finished products e.g. light emitting modules
  • the object can be also achieved by a manufacturing method of the semiconductor light emitting device, which achieves the above-described effects.
  • Fig. 1A is a perspective view illustrating an LED array chip relating to a first embodiment
  • Fig. IB is a plan view illustrating the LED array chip relating to the first embodiment
  • Fig. 2 is a cross-sectional view illustrating a part of the LED array chip relating to the first embodiment
  • Fig. 3A is a plan view illustrating an LED in the LED array chip relating to the first embodiment
  • Fig. 3B illustrates how LEDs are connected in the LED array chip relating to the first embodiment
  • Fig. 3C is a bottom plan view illustrating the LED array chip relating to the first embodiment
  • Fig. 4 illustrates part of a manufacturing method of the LED array chip relating to the first embodiment.
  • Fig. 1A is a perspective view illustrating an LED array chip relating to a first embodiment
  • Fig. IB is a plan view illustrating the LED array chip relating to the first embodiment
  • Fig. 2 is a cross-sectional view illustrating a part of the LED array chip
  • Fig. 5 illustrates part of the manufacturing method of the LED array chip relating to the first embodiment.
  • Fig. 6 illustrates part of the manufacturing method of the LED array chip relating to the first embodiment.
  • Fig. 7 illustrates part of the manufacturing method of the LED array chip relating to the first embodiment.
  • Fig. 8 is a perspective view illustrating an LED module relating to the first embodiment.
  • Fig. 9A is a plan view illustrating the LED module relating to the first embodiment
  • Fig. 9B illustrates a cross-section of the LED module along a line CC shown in Fig. 9A
  • Fig. 9C is an enlargement view illustrating a portion E shown in Fig. 9B .
  • Fig. 9A is a plan view illustrating the LED module relating to the first embodiment
  • Fig. 9B illustrates a cross-section of the LED module along a line CC shown in Fig. 9A
  • Fig. 9C is an enlargement view illustrating a portion E shown in
  • FIG. 10A illustrates the LED module relating to the first embodiment after removing a lens
  • Fig. 10B illustrates a pad pattern formed on a ceramics substrate constituting the LED module relating to the first embodiment.
  • Fig. 11A is a perspective view illustrating a lighting apparatus relating to the first embodiment
  • Fig. 11B is a bottom plan view illustrating the lighting apparatus.
  • Fig.12 is a perspective exploded view illustrating the lighting apparatus relating to the first embodiment.
  • Fig. 13 shows an emission spectrum of the lighting apparatus relating to the first embodiment.
  • Fig. 14A is a plan view illustrating an LED chip relating to a first modification example of a second embodiment after removing a phosphor film, Fig.
  • Fig. 14B illustrates a cross-section of the LED chip along a line FF shown in Fig. 14A
  • Fig. 14C is a bottom plan view illustrating the LED chip.
  • Fig. 15 illustrates part of a manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 16 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 17 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 18 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 19 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 15 illustrates part of a manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 16 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 20 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment.
  • Fig. 21A is a plan view illustrating an LED chip relating to a second modification example of the second • embodiment after removing a phosphor film
  • Fig. 2IB illustrates a cross-section of the LED chip along a line GG shown in Fig. 21A.
  • Fig. 22 illustrates part of a manufacturing process of the LED chip relating to the second modification example of the second embodiment.
  • Fig. 23 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment.
  • Fig. 24 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment.
  • Fig. 21A is a plan view illustrating an LED chip relating to a second modification example of the second • embodiment after removing a phosphor film
  • Fig. 2IB illustrates a cross-section of the LED chip along a line GG shown in
  • Fig. 25 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment.
  • Fig. 26 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment.
  • Fig. 27 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment.
  • Fig. 28A is a plan view illustrating an LED array chip relating to a third modification example of the second embodiment after removing a phosphor film
  • Fig. 28B illustrates a cross-section of the LED array chip along a line HH shown in Fig. 28A
  • Fig. 28C illustrates how LEDs are connected in the LED array chip.
  • Fig. 29 illustrates part of a manufacturing process of the LED array chip relating to the third modification example of the second embodiment.
  • Fig. 30 illustrates part of the manufacturing process of the LED array chip relating to the third modification example of the second embodiment.
  • Fig. 31 illustrates part of the manufacturing process of the LED array chip relating to the third modification example of the second embodiment.
  • Fig. 32 illustrates part of the manufacturing process of the LED array chip relating to the third modification example of the second embodiment.
  • Fig. 33 is a perspective view illustrating a white LED module relating to a fourth modification example of the second embodiment.
  • Fig. 34A is a plan view illustrating the white LED module relating to the fourth modification example of the second embodiment, Fig.
  • Fig. 34B illustrates a cross-section of the white LED module along a line KK shown in Fig. 34A
  • Fig. 34C is an enlargement view illustrating a chip-mounted area shown in Fig. 34B.
  • Fig. 35A illustrates a wiring pattern formed in the white LED module relating to the fourth modification example of the second embodiment
  • Fig.35B illustrates a pad pattern formed on a ceramics substrate constituting the white LED module .
  • Fig. 36A is a perspective view illustrating a lighting apparatus relating to the fourth modification example of the second embodiment
  • Fig. 36B is a bottom plan view illustrating the lighting apparatus .
  • Fig.37 is a perspective exploded view illustrating the lighting apparatus relating to the fourth modification example of the second embodiment.
  • Fig. 39 is a perspective view illustrating an LED array chip relating to a third embodiment.
  • Fig. 40 is a plan view illustrating the LED array chip relating to the third embodiment.
  • Fig. 41A illustrates a cross-section of the LED array chip along a line PP shown in Fig.40
  • Fig.41B illustrates a cross-section of the LED array chip along a line QQ shown in Fig. 40.
  • Fig. 42A illustrates how LEDs are connected in the LED array chip relating to the third embodiment
  • Fig. 42B is a bottom plan view illustrating the LED array chip relating to the third embodiment.
  • Fig. 41A illustrates a cross-section of the LED array chip along a line PP shown in Fig.40
  • Fig.41B illustrates a cross-section of the LED array chip along a line QQ shown in Fig. 40.
  • Fig. 42A illustrates how LEDs are connected in the LED array chip relating to the third embodiment
  • Fig. 43 is used to describe a manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 44 is used to describe the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 45 is used to describe the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 46 is used to describe the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 47 is used to describe the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 48 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 49 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 50 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig. 51 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment.
  • Fig .52 is a perspective view illustrating an LED module relating to the third embodiment.
  • Fig. 53A is a plan view illustrating the LED module relating to the third embodiment
  • Fig. 53B illustrates a cross-section of the LED module along a line XX shown in Fig. 53A
  • Fig. 53C is an enlargement view illustrating a portion Y shown in Fig. 53B.
  • Fig. 54A illustrates the LED module relating to the third embodiment after removing a lens
  • Fig. 54B illustrates a pad pattern formed on a ceramics substrate constituting the LED module relating to the third embodiment.
  • Fig. 55A is a perspective view illustrating a lighting apparatus relating to the third embodiment
  • Fig. 55B is a bottom plan view illustrating the lighting apparatus relating to the third embodiment
  • Fig.56 is a perspective exploded view illustrating the lighting apparatus relating to the third embodiment.
  • Fig.- 57 shows an emission spectrum of the lighting apparatus relating to the third embodiment.
  • Fig. 58A is a plan view illustrating a surface mounting device (SMD) LED relating to a fourth embodiment
  • Fig. 58B illustrates a cross-section of the SMD LED along a line ZZ shown in Fig. 58A.
  • SMD surface mounting device
  • Fig. 1A is an external perspective view illustrating a construction of an LED array chip 2, which is one type of a semiconductor light emitting device
  • Fig. IB is a plan view illustrating the LED array chip 2.
  • Fig. 1A mainly illustrates how LEDs 6 (mentioned later) are arranged in the LED array chip 2, and therefore does not show minute depressions and protrusions on surfaces of the LEDs 6.
  • Fig. IB illustrates the LED array chip after removing a phosphor film 48 (mentioned later) . As shown in Figs.
  • the LED array chip 2 is formed in such a manner that the LEDs 6 are arranged in a matrix of N rows and M columns (in the first embodiment, a matrix of seven rows and five columns, in total, 35 LEDs 6) on a non-doped (highly resistive) SiC substrate 4 which is a semiconductor substrate (hereinafter simply referred to as "an SiC substrate 4") .
  • the LEDs 6 are light emitting elements each of which is formed by a multilayer epitaxial structure including a light emitting layer.
  • the 35 LEDs 6 are formed by epitaxial growth on a main ' surface of the SiC substrate 4 with a space having a width (W4) of 50 ⁇ m being left.
  • the space is an area of the main surface of the SiC substrate 4 in which a multilayer epitaxial structure (the 35 LEDs 6) is not formed. In other words, the space is formed so as to surround the multilayer epitaxial structure.
  • the space is hereinafter referred to as an exposed portion 7.
  • a size Ll x Wl of each LED 6 is 285 ⁇ m 400 ⁇ m.
  • a size L2 W2 of an area in which the LEDs 6 are formed is 2 mm 2 mm.
  • a size L3 x W3 of the LED array chip 2 is 2.1 mm x 2.1 mm.
  • FIG. 2A illustrates a cross-section of the LED array chip 2 along a line AA shown in Fig. IB
  • Fig. 2B illustrates a cross-section of the LED array chip 2 along a line BB shown in Fig. IB
  • Fig. 2A illustrates a cross-section of an LED ⁇ a of the first row and the first column and an LED 6b of the first row and the second column
  • Fig.2B illustrates a cross-section of an LED 6c of the seventh row and the fourth column and an LED 6d of the seventh row and the fifth column.
  • Each LED 6 is formed by a multilayer epitaxial structure made up of an n-AlGaN buffer layer 8 (having a thickness of 30 nm) , a distributed bragg reflector (DBR) layer 10 composed of 30 periods of n-AlGaN/GaN (having a total thickness of 3 ⁇ m) , an n-GaN clad layer 12 (having an Si-doping amount of 3 ⁇ l0 18 cm -3 and a thickness of 200 nm) , an InGaN/GaN multiple quantum well (MQW) light emitting layer 14 composed of six periods of InGaN (having a thickness of 2 nm) /GaN (having a thickness of 8 nm) , a p-GaN clad layer 16 (having an Mg-doping amount of lxlO 19 cm -3 and a thickness of 200 nm) , and a p-GaN contact layer 18 (
  • the LED 6 basically has a construction in which a light emitting layer (the MQW light emitting layer 14) is sandwiched between a conductive layer (the n-GaN clad layer 12 on a side of the SiC substrate 4) and a conductive layer (the p-GaN contact layer 18 and the p-GaN clad layer 16 on a side of a light extraction surface) .
  • a light emitting layer the MQW light emitting layer 14
  • a conductive layer the n-GaN clad layer 12 on a side of the SiC substrate 4
  • a conductive layer the p-GaN contact layer 18 and the p-GaN clad layer 16 on a side of a light extraction surface
  • the light emitting layer 14 emits blue light having a wavelength of 460 nm.
  • the Ni/Au thin film 20 and the ITO transparent electrode 22 are used as a p-electrode in the first embodiment to improve transmission of the light emitted from the light emitting layer 14.
  • Amain surface of the p-electrode of the LED 6 from which light is extracted is made regularly uneven in order to improve light extraction efficiency. To be more specific, as shown in Fig.
  • FIG. 3A which is a plan view illustrating the LED 6, circular depressions 25 are formed at a predetermined interval (d) of 1 ⁇ m in the first embodiment.
  • a planar shape of each depression 25 is not limited to a circle as described above, but may be a quadrangle or a hexagon.
  • the uneven surface may be achieved by creating linear grooves at a predetermined interval, or simply by irregularly damaging the surface of the p-electrode.
  • the 35 LEDs 6 described above are connected in series on the SiC substrate 4.
  • Figs. 2A and 2B are used to explain how the LEDs 6 are connected in the LED array chip 2. As shown in Fig.
  • the adjacent LEDs 6a and 6b are divided from each other by a division groove 26 that is deep enough to reach the SiC substrate 4.
  • a division groove 26 that is deep enough to reach the SiC substrate 4.
  • An insulating film (Si 3 N 4 film) 28 is formed so as to cover side surfaces of each of the LEDs 6a, ⁇ b, 6c and 6d and the division grooves 26.
  • a bridging wire 30 is formed on the insulating film 28 to connect a p-electrode of the LED 6a (an Ni/Au thin film 20 and an ITO transparent electrode 22) to an n-electrode of the LED 6b (a Ti/Au electrode 24) .
  • bridging wire 30 formed on the insulating film 28 connects a p-electrode of the LED 6c and an n-electrode of the LED 6d as shown in Fig.2B.
  • bridging wires 30 connect LEDs 6 from an LED 6e of the first row and the third column to an LED 6f of the seventh row and the third column.
  • all of the LEDs 6 are connected in series as shown in Fig. 3B .
  • the LED 6a is an LED on a lower potential end of the LED array chip 2. Therefore, a Ti/Au electrode 24 of the LED 6a is a cathode electrode 32 of the LED array chip 2.
  • the LED 6d is an LED on a higher potential end. Therefore, an Ni/Au thin film 20 and an ITO transparent electrode 22 of the LED 6d are an anode electrode 34 of the LED array chip 2.
  • Fig.3C illustrates a back surface of the LED array chip 2. As shown in Fig. 3C, two power supply terminals 36 and 38 are formed on the back surface, which is opposite to a front surface of the SiC substrate 4 on which the LEDs 6 are formed. The power supply terminals 36 and 38 are each formed by a Ti/Pt/Au film. As shown in Figs.
  • the cathode electrode 32 is connected to the power supply terminal 36 by a bridging wire 40 and a through hole 42 provided in the SiC substrate ' 4
  • the anode electrode 34 is connected to the power supply terminal 38 by a bridging wire 44 and a through hole 46 provided in the SiC substrate 4.
  • the through holes 42 and 46 are each formed by filling an opening with a diameter of 30 ⁇ m provided in the SiC substrate 4 with Pt .
  • the phosphor film 48 is formed on the front surface of the SiC substrate 4 so as to cover the LEDs 6 and the entire exposed portion 7 the SiC substrate 4.
  • the phosphor film 48 is made of a light-transmitting resin, for example, silicone in which particles of a yellow phosphor (Sr, Ba) 2 Si0 4 :Eu 2+ and fine particles of Si0 2 are dispersed.
  • the phosphor film 48 has a thickness T (shown in Fig. 2A) of 50 ⁇ m.
  • the light-transmitting resin may be an epoxy resin or a polyimide resin, instead of silicone.
  • the phosphor in the phosphor film 48 converts part of the blue light emitted from the light emitting layer 14 of each LED 6 into yellow light.
  • the blue light from each LED 6 and the yellow light from the phosphor mix together, to generate white light.
  • the DBR layer 10, which is a light reflective layer is formed between the light emitting layer 14 and the SiC substrate 4, 99% or more of blue light emitted from the light emitting layer 14 towards the SiC substrate 4 is reflected towards the- light extraction surface. This improves light extraction efficiency of each LED 6.
  • blue light indicates light having a wavelength from 400 nm inclusive to 500 nm exclusive
  • yellow light indicates light having a wavelength from 550 nm inclusive to 600 nm exclusive, in this description.
  • the LEDs 6 may be configured to emit light having a peak emission wavelength that falls within the above-mentioned range, instead of a peak emission wavelength of 460 nm as described above.
  • the following part describes a manufacturing method of the LED array chip 2 described above, with reference to Figs. 4, 5 and 6.
  • a material to form each constituent of the LED array chip 2 is identified by a three-digit number whose first digit is one. The last two digits of the three-digit number represents a reference numeral identifying the corresponding constituent of the LED array chip 2. Firstly, as shown in Fig.
  • an n-AlGaN buffer layer 108, a DBR layer 110 composed of 30 periods of n-AlGaN/GaN, an n-GaN clad layer 112, an InGaN/GaN MQW light emitting layer 114, a p-GaN clad layer 116 and a p-GaN contact layer 118 are formed on a non-doped SiC substrate 104 in the stated order using a metal organic chemical vapor deposition (MOCVD) method (step Al) .
  • MOCVD metal organic chemical vapor deposition
  • a mask 50 is formed, so as to mask an area, on the lamination made up of the layers 118, 116, 114, 112, 110 and 108, that is slightly larger than an area in which the Ni/Au thin film 20 (and the ITO transparent electrode 22) of each LED 6 is to be formed.
  • An unmasked area of the lamination is removed by etching to a depth of approximately half of the thickness of the n-GaN clad layer 112 is removed (step Bl) .
  • a surface to connect the Ti/Au electrode 24 (an n-electrode formation surface) 52 is formed.
  • the mask 50 is removed prior to the next step.
  • a mask 54 is formed so as to cover the resulting surface after the step Bl except for areas in which the exposed portion 7 and the division groove 26 are to be formed. Unmasked areas of a lamination made up of the remaining layer 112 and the layers 110 and 108 are removed by etching to such a depth that the SiC substrate 104 is exposed, to create the exposed portion 7 and the division groove 26 (step Cl). Which is to say, the exposed portion 7 is created by removing a corresponding part of the multilayer epitaxial structure composed of the layers 108 to 118 (the corresponding part of the multilayer epitaxial structure which has been removed is hereinafter referred to as a removed multilayer portion.) . After the etching is performed, the mask 54 is removed prior to the next step.
  • a mask 56 is then formed so as to mask the Si 3 N 4 film 128 except for an area in which the Ni/Au thin film 20 (and the ITO transparent electrode 22) of each LED 6 is to be formed.
  • An unmasked area of the Si 3 N 4 film 128 is removed by etching, and an Ni/Au thin film 120 is then formed by deposition.
  • the Ni/Au thin film 20 is formed (step El) .
  • a portion of the Ni/Au thin film 120 which is formed on the mask 56 (no shown in Fig. 5) is removed together with the mask 56 prior to the next step.
  • a mask 58 is formed so as to mask the resulting surface after the step El, except for an area on the Si 3 N 4 film 128 in which the Ti/Au electrode 24 for each LED 6 is to be formed.
  • a Ti/Au film 124 which is a thin metal film, is applied by deposition.
  • the Ti/Au electrode 24 is formed (step Fl) .
  • a portion of the Ti/Au film 124 which is formed on the mask 58 (not shown in Fig. 5) is removed together with the mask 58 prior to the next step.
  • a mask 60 is formed so as to cover the resulting surface after the step Fl except for an area in which the through holes 42 and 46 are to be formed.
  • An unmasked area of the resulting surface is removed by etching, to form an opening 61 having a depth of 200 ⁇ m.
  • the opening 61 is filled with Pt by electroless deposition or the like (step GI) .
  • the mask 60 is removed prior to the next step.
  • a mask 62 is formed to mask the resulting surface after the step Gl except for areas in which the depressions 25 are to be formed.
  • Unmasked areas of the resulting surface are removed by etching to such a depth that the p-GaN contact layer 118 is exposed, to form the depressions 25 (step HI) .
  • the mask 62 is removed prior to the next step.
  • a mask 64 is formed so as to mask the resulting surface after the step Hi except for an area in which the ITO transparent electrode 22 of each LED 6 is to be formed.
  • an ITO film 122 is applied by sputtering, to form the ITO transparent electrode 22 for each LED 6 (step II) .
  • a portion of the ITO film 122 which is formed on the mask 64 (not shown in Fig. 6) is removed together with the mask 64 prior to the next step.
  • the bridging wires 30, 40 and 44 are formed in the following manner.
  • a mask 66 is formed so as to mask the resulting surface after the step II, except for areas in which the bridging wires 30, 40 and 44 are to be formed.
  • a Ti/Pt/Au film which is a thin metal film, is applied by deposition, to form the bridging wires 30, 40 and 44 (step Jl) .
  • a portion of the Ti/Pt/Au film which is formed on the mask 66 (not shown in Fig.7) is removed together with the mask 66 prior to the next step.
  • a back surface of the SiC substrate 104 is polished so that the thickness of the SiC substrate 104 becomes 150 ⁇ m.
  • the through holes 42 and 46 are exposed on the back surface of the SiC substrate 104 (step KI) .
  • a mask (not shown in Fig. 7) is formed so as to mask the back surface of the SiC substrate 104 except for areas in which the power supply terminals 36 and 38 are to be formed.
  • a Ti/Pt/Au film which is a thin metal film, is applied by deposition.
  • the Ti/Pt/Au power supply terminals 36 and 38 are formed (step Ll) .
  • a portion of the Ti/Pt/Au film which is formed on the mask (not shown in Fig. 7) is removed together with the mask prior to the next step.
  • silicone in which particles of a yellow phosphor (Sr, Ba) 2 Sio 4 : Eu 2+ and fine particles of Si0 2 are dispersed is applied by printing so as to cover the exposed portion 7 and the LEDs 6.
  • the silicone is heated to be cured, to form the phosphor film 48.
  • the phosphor film 48 is polished so that the thickness of the phosphor film 48 becomes 50 ⁇ m (step Ml) .
  • color of white light emitted from the LED array chip 2 is determined by a ratio between blue light emitted from the LEDs 6 and yellow light generated by converting the blue light. This ratio can be adjusted by changing the percentage of the phosphor particles included in the silicone resin and the thickness of the phosphor film 48.
  • the silicone resin including the phosphor particles is first applied at a thickness larger than a designed thickness of the phosphor film 48.
  • the applied resin is then polished after heated to be cured, to achieve the designed thickness. In this way, the phosphor film 48 can be formed at an even thickness. This reduces unevenness of color with it being possible to produce white light having a predetermined color temperature reliably.
  • the SiC substrate 104 is divided into individual LED array chips 2 by dicing, to obtain the LED array chip 2 (shown in Figs. 1A and IB) .
  • the phosphor film 48 may be formed by applying a resin including a phosphor after a mesa etching step but before a dicing step in a conventional wafer fabrication process.
  • a groove created by conventional mesa etching has such a width that only one or two phosphor particles can be arranged in a widthwise direction. In this case, blue light emitted from side surfaces of the light emitting layer 14 of each LED 6, to a large extent, goes through the phosphor layer 48 without exciting the phosphor.
  • the resin including the phosphor is applied on side surfaces of the multilayer epitaxial structure (the side surfaces of the light emitting layer 14) at a thickness having an equal length to the width (W4) of the exposed portion 7.
  • the width (W4) of the exposed portion 7 is sufficiently larger than a diameter of the phosphor particle.
  • unevenness of color occurs only in a white LED that uses visible light having a spectral component of a wavelength within a range of 380 nm and 780 nm (purple to red) for an excitation light source.
  • unevenness of color does not occur in a white LED having near-ultraviolet light as an excitation light source.
  • ultraviolet light with a peak emission wavelength of 370 nm also has a spectral component of a wavelength no less than 380 nm (visible light) . Therefore, a white LED using near-ultraviolet light as an excitation light source can have a problem of unevenness of color, depending on a ratio of spectral components of a wavelength no less than 380 nm.
  • the first embodiment is applicable to an LED having a light emitting layer that emits near-ultraviolet light to achieve the same effects of reducing unevenness of color for the same reasons stated ⁇ above.
  • the first embodiment of the present invention is applicable to an LED including a light emitting layer that emits light including a spectral component of a wavelength, at least, within a range of 380 nm and 780 nm to reduce unevenness of color.
  • the application of the . first embodiment is not limited to an LED including a light emitting layer that emits blue light having a peak emission wavelength of 460 nm as described above. Fig.
  • FIG. 8 is an external perspective view illustrating a white LED module 200 including LED array chips 2 described above (hereinafter simply referred to as "an LED module 200") .
  • the LED module 200 is attached to a lighting unit 240 (mentioned later) .
  • the LED module 200 includes a ceramics substrate 202 that is in a shape of a circle having a diameter of 5 cm and is made of aluminum nitride (A1N) and three lenses 204, 206 and 208 made of glass .
  • a guiding depression 210 used to attach the LED module 200 to the lighting unit 240 and terminals 212 and 214 to receive a power supply from the lighting unit 240 are provided in the ceramics substrate 202.
  • Fig. 9A is a plan view illustrating the LED module 200, Fig.
  • FIG. 9B illustrates a cross-section of the LED module 200 along a line CC shown in Fig.9A
  • Fig.9C is an enlargement view illustrating a portion E shown in Fig. 9B.
  • a guiding hole (a through hole) 216 is provided in the center of the ceramics substrate 202 to attach the LED module 200 to the lighting unit 240.
  • a gold plating 217 is applied to a lower surface of the ceramics substrate 202 for improving heat dissipation.
  • the LED array chip 2 is mounted at a location, on an upper surface of the ceramics substrate 202, corresponding to a center of each of the lenses 204, 206 and 208 having a shape of a circle as shown in Fig. 9A. In total, three LED array chips 2 are mounted on the ceramics substrate 202.
  • the ceramics substrate 202 is made up of two ceramics substrates 201 and 203 each of which has a thickness of 0.5 mm and is mainly made of A1N.
  • the ceramics substrates 201 and 203 may be made of A1 2 0 3 , BN, MgO, ZnO, Si ' C and diamond, instead of A1N.
  • the LED array chips 2 are mounted on an upper surface of the lower ceramics substrate 201.
  • Taper through holes 215 are provided in the upper ceramics substrate 203, so as to create spaces for mounting the LED array chips 2.
  • a cathode pad 218 and an anode pad 220 are provided at the location, on the upper surface of the ceramics substrate 201, where each LED array chip 2 is to be mounted.
  • Each of the cathode pad 218 and the anode pad 220 is made up of nickel (Ni) plating and then gold (Au) plating applied on copper (Cu) .
  • the LED array chip 2 is mounted on the ceramics substrate 201 in such a manner that the SiC substrate 4 is adhered to the ceramics substrate 201.
  • the power supply terminals 36 and 38 are respectively connected to the cathode pad 218 and the anode pad 220 using solder. Instead of solder, a gold bump or a silver paste may be used.
  • solder a gold bump or a silver paste may be used.
  • the LED array chips 2 Before being mounted on the ceramics substrate 201, the LED array chips 2 have been tested for their optical performance, such as unevenness of color, and have passed the test.
  • the LED array chips 2 can be tested for their optical performance before being mounted because the LED array chip 2 relating to the first embodiment includes the phosphor film 48, and can emit white light by itself. Thus, it can be prevented that the LED module 300 including the LED array chips 2 is rejected due to poor optical performance of the LED array chips 2. Consequently, a ratio of accepted finished products (LED modules 300) to all finished products is improved.
  • An aluminum reflection film 219 is formed on a wall of each through hole 215 provided in the upper ceramics substrate 203 and on an upper surface of the ceramics substrate 203.
  • the lenses 204, 206 and 208 are adhered to the ceramics substrate 203 using an adhesive agent 221.
  • the adhesive agent 221 may be a silicone resin, an epoxy resin or the like.
  • the three LED array chips 2 are connected in parallel by a wiring pattern formed on the upper surface of the ceramics substrate 201.
  • Fig. 10A is a plan view illustrating the LED module 200 after removing the lenses 204, 206 and 208. In Fig. 10A, the three LED array chips 2 are distinguished from each other by addition of marks of A, B and C.
  • the anode pad 220 and the cathode pad 218 are provided at the location, on the upper surface of the ceramics substrate 201, where each of the LED array chips 2A, 2B and 2C is mounted.
  • the anode pads 220 that are respectively connected to the LED array chips 2A, 2B and 2C are electrically connected to each other by a wiring pattern 236.
  • the wiring pattern 236 is connected to the positive terminal 212 at its end by a through hole 237.
  • the cathode pads 218 that are respectively connected to the LED array chips 2A, 2B and 2C are electrically connected to each other by a wiring pattern 238.
  • the wiring pattern 238 is connected to the negative terminal 214 at its end by a through hole 239.
  • the LED array chips 2A, 2B and 2C are connected in parallel by the wiring patterns 236 and 238.
  • the LED module 200 described above is attached to the lighting unit 240.
  • the LED module 200 and the lighting unit 240 constitute a lighting apparatus 242.
  • Fig. 11A is a schematic perspective view illustrating the lighting apparatus 242
  • Fig. 11B is a bottom plan view illustrating the lighting apparatus 242.
  • the lighting unit 240 is, for example, fixed on a ceiling of a room.
  • the lighting unit 240 includes a power supply circuit (not shown in Figs ..11A and 11B) that converts alternating-current power (e.g. 100 V, 50/60Hz) supplied from a commercial power source into direct-current power required for driving the LED module 200.
  • alternating-current power e.g. 100 V, 50/60Hz
  • the lighting unit 240 has a circular depression 244 in which the LED module 200 is to be fitted.
  • a bottom surface of the circular depression 244 is flat.
  • An internal thread (not shown in Fig. 12) is created, in the vicinity of an open end of the circular depression 244, on an inside wall of the circular depression 244.
  • Flexible power supply terminals 246 and 248 and a guiding protrusion 230 protrude from the inside wall of the circular depression 244, between the internal thread and the bottom surface of the circular depression 244.
  • the power supply terminals 246 and 248 are respectively positive and negative.
  • a guiding pin 252 is provided in the center of the bottom surface of the circular depression 244.
  • An O-ring 254 made of silicon rubber and a ring screw 256 are used to attach the LED module 200 to the lighting unit 240.
  • the ring screw 256 has a shape of a ring that has a substantially rectangular cross-section.
  • An external thread (not shown in Fig. 12) is created on an outer surface of the ring screw 256, and a depression 258 is provided.
  • the following part describes a procedure of attaching the LED module 200 to the lighting unit 240. To start with, the LED module 200 is fitted in the circular depression 244 in the following manner .
  • the ceramics substrate 202 of the LED module 200 is positioned between the bottom surface of the circular depression 244 and the power supply terminals 246 and 248.
  • the guiding pin 252 is fitted in the guiding hole 216, so as to align the center of the LED module 200 with the center of the circular depression 244. Furthermore, the guiding protrusion 230 is fitted in the guiding depression 210, so as to align the positive and negative terminals 212 and 214 with the power supply terminals 246 and 248 respectively.
  • the ring screw 256 to which the O-ring 254 has been attached is screwed into the circular depression 244 and fixed.
  • the positive and negative terminals 212 and 214 are respectively connected to the power supply terminals 246 and 248, so that the terminals 212 and 214 are electrically connected to the terminals 246 and 248 reliably.
  • the substantially entire lower surface of the ceramics substrate 202 is connected to the flat bottom surface of the circular depression 244. This enables heat generated in the LED module 200 to be effectively conducted to the lighting unit 240, thereby improving a cooling effect of the LED module 200.
  • silicone grease may be applied to the lower surface of the ceramics substrate 202 and the bottom surface of the circular depression 244 to further improve the heat conduction efficiency from the LED module 200 to the lighting unit 240.
  • the white light is emitted through the lenses 204, 206 and 208.
  • an electric current of 150 mA is applied to the LED module 200, a total luminous flux of 800 lm, an on-axis luminous intensity o'f 1500 cd, and an emission spectrum shown in Fig. 13 are observed.
  • the first embodiment includes the following modification examples.
  • (1) according to the first embodiment, the removed multilayer portion includes all of the layers from 108 to 118 composing the multilayer epitaxial structure (see step Cl in Fig. 4) . However, the first embodiment is not limited to such.
  • the removed multilayer portion includes the layers from an outmost layer (the n-GaN contact layer 118) to a conductive layer between the light emitting layer 114 and the SiC substrate 104 (the n-GaN clad layer 112) .
  • the phosphor film 48 can be formed at a large thickness not only on the upper surface of the multilayer epitaxial structure made up of the layers 108 to 118 but also on the side surfaces of the multilayer epitaxial structure which is created by the removed multilayer portion. As a result, unevenness of color can be reduced as described above.
  • the SiC substrate 104 is used as a base substrate on which the multilayer epitaxial structure made up of the layers from the n-AlGaN buffer layer 108 to the p-GaN contact layer 118 are formed by epitaxial growth. This is because the SiC substrate 104 has a higher heat conductivity than copper and aluminum, and can efficiently conduct heat generated by the light emitting layer 14 to the ceramics substrate 202 which is a printed-wiring board and on which the LED array chips 2 are mounted.
  • the SiC substrate 104 may be replaced with one of an AlN substrate, a GaN substrate, a BN substrate and an Si substrate as they similarly have a high heat conductivity .
  • the first embodiment may be realized by employing a generally used sapphire substrate, which has a slightly lower heat conductivity.
  • the LED array chip 2 includes the 35 LEDs 6 (light emitting elements) , and is a square approximately 2 mm on its side.
  • the LED array chip 2 may include any number of LEDs (light emitting elements) .
  • the first embodiment may be realized by an LED chip constituted by one LED (light emitting element) , instead of the LED array chip 2. If such is the case, the exposed portion 7 is formed so as to surround each LED in the step Cl of the manufacturing method. (FIRST MODIFICATION EXAMPLE OF SECOND EMBODIMENT) Fig.
  • FIG. 14A is a plan view illustrating a white LED chip 2002 which is one type of a semiconductor light emitting device (hereinafter simply referred to as "an LED chip 2002")
  • Fig. 14B illustrates a cross-section of the LED chip 2002 along a line FF shown in Fig. 14A
  • Fig. 14C is a bottom plan view illustrating the LED chip 2002.
  • Fig. 14A illustrates the LED chip 2002 after removing a phosphor film 2008 (shown in Fig. 14B and mentioned later) . It should be noted that a reduced scale for each constituent is not uniform in any of the drawings including Figs. 14A, 14B and 14C. As shown in Fig.
  • the LED chip 2002 is formed in such a manner that a multilayer epitaxial structure 2006 and the phosphor film 2008 are formed on a high-resistive Si substrate 2004 which is a base substrate (hereinafter referred to as "an Si substrate 2004") .
  • a main surface of the Si substrate 2004 is slightly larger than a main surface of the multilayer epitaxial structure 2006.
  • the multilayer epitaxial structure 2006 is formed on one of the main surfaces of the Si substrate 2004 with a space being retained along a periphery of the substrate 2004.
  • the multilayer epitaxial structure 2006 is made up of a p-AlGaN layer 2010 which is a conductive layer (having a thickness of 200 nm) , a InGaN/AlGaN MQW light emitting layer 2012 (having a thickness of 40 nm) , and an n-AlGaN layer 2014 which is a conductive layer (having a thickness of 2 ⁇ m) .
  • the layer 2010 is the closest to the Si Substrate 2004, and then the layers 2012 and 2014 are formed in the stated order.
  • the multilayer epitaxial structure 2006 has a diode structure.
  • the LED chip 2002 is a 500- ⁇ m-square and has a thickness of 300 ⁇ m (the Si substrate 2004 has a thickness of 100 ⁇ m, and the phosphor film 2008 has a thickness of 200 ⁇ m with respect to an upper main surface of the Si substrate 2004) .
  • the multilayer epitaxial structure 2006 has the above-mentioned thickness and is a 420- ⁇ m-square .
  • a high-reflective Rh/Pt/Au electrode 2016 is formed on the entire lower main surface of the p-AlGaN layer 2010, which is opposite to a main surface on which the light emitting layer 2012 is formed.
  • the multilayer epitaxial structure 2006 and the high-reflective electrode 2016 are first formed on a different sapphire substrate 2042 (shown in Fig. 15 and mentioned later) using a wafer fabrication process, and then transferred to the Si substrate 2004.
  • a conductive film 2018 which is made of a conductive material is formed, at least, in an area corresponding to the high-reflective electrode 2016 on an upper main surface of the Si substrate 2004.
  • the conductive film 2018 is made of Ti/Pt/Au, and connected to the high-reflective electrode 2016 by a connection layer 2020 which is made of a conductive material such as Au/Sn.
  • a light extraction surface of the multilayer epitaxial structure 2006 is an upper main surface of the n-AlGaN layer 2014, which is opposite to a main surface to which the light emitting layer 2012 is connected.
  • depressions 2022 are formed on the upper main surface of the layer 2014 to improve light extraction efficiency.
  • the depressions 2022 are formed in such a manner that a tantalum oxide (Ta 2 0 5 ) film 2024 formed at an even thickness on the upper main surface of the n-AlGaN layer 2014 is partially removed by etching.
  • a Ti/Pt/Au electrode 2026 which is L-shaped is formed in an area on the upper main surface of the n-AlGaN layer 2014.
  • An insulating film 2028 made of silicon nitride is formed on the entire surface of each side surface of the multilayer epitaxial structure 2006 and in an area of the upper main surface of the multilayer epitaxial structure 2006 (so as to frame the upper main surface of the multilayer epitaxial structure 2006) .
  • An anode power supply terminal 2030 and a cathode power supply terminal 2032 which are made of Ti/Au are formed on a lower main surface of the Si substrate 2004 which is opposite to a main surface on which the multilayer epitaxial structure 2006 is formed.
  • the conductive film 2018 has a portion which is not covered by the multilayer epitaxial structure 2006
  • the extended portion 2018A is used to electrically connect the conductive film 2018 to the anode power supply terminal 2030 by a through hole 2034 provided in the Si substrate 2004.
  • a wiring 2036 is connected at its one end to a corner portion 2026A of the L-shaped electrode 2026, and extends, from the corner portion 2025A, to a periphery of the upper main surface of the n-AlGaN layer 2014 (the light extraction surface of the multilayer epitaxial structure 2006) and then runs along a side surface of the multilayer epitaxial structure 2006, to reach the Si substrate 2004.
  • the wiring 2036 is made up of a Ti/Pt/Au film, and electrically insulated from the multilayer epitaxial structure 2006 by means of the insulating film 2028.
  • the wiring 2036 is electrically connected at the other end to the cathode power supply terminal 2032 by a through hole 2038 provided in the Si substrate 2004.
  • the through holes 2034 and 2038 are each formed by filling a through hole running in a thickness direction of the Si substrate 2004 with Pt.
  • the phosphor film 2008 covers the side surfaces and the light extraction surface of the multilayer epitaxial structure 2006 formed on the Si substrate 2004.
  • the light extraction surface is the upper main surface of the multilayer epitaxial structure 2006 which is opposite to a main surface to which the Si substrate 2004 is connected.
  • the phosphor film 2008 is .made of a light-transmitting resin such as silicone in which particles of phosphors of four different colors and fine particles of metal oxide such as Si0 2 are dispersed.
  • phosphors include a blue phosphor which contains at least one of (Ba, Sr) MgAl ⁇ 0 O ⁇ 7 :Eu 2+ , (Ba, Sr, Ca, Mg) io (P0 ) 6 Cl 2 :Eu 2+ and the like, a green phosphor which contains at least one of BaMgAl 10 O ⁇ 7 :Eu 2+ Mn 2+ , (Ba, Sr) 2 Si0 4 :Eu 2+ and the like, a yellow phosphor which contains, for example, (Sr, Ba) 2 Si0 :Eu 2+ , and a red phosphor which contains at least one of La 2 0 2 S:Eu 3+ , CaS:Eu 2+ , Sr 2 Si 5 N 8 :
  • an epoxy resin or a polyimide resin may be used as the light-transmitting resin.
  • the phosphor film 2008 is formed on and around the multilayer epitaxial structure 2006 at a substantially even thickness.
  • An Al light reflective film 2040 is formed between the phosphor film 2008 and an area, on the Si substrate 2004, in which the multilayer epitaxial structure 2006 is not formed.
  • the near-ultraviolet light from the light emitting layer 2012 is, to a large extend, emitted from the n-AlGaN layer 2014 and absorbed in the phosphor film 2008.
  • the phosphor film 2008 converts the near-ultraviolet light into white light.
  • the multilayer epitaxial structure 2006 only has a thickness of less than 3 ⁇ m
  • the phosphor film 2008 has a comparatively large thickness of 200 ⁇ m.
  • the phosphor film 2008 is also formed on the side surfaces of the multilayer epitaxial structure 2006.
  • the phosphor film 2008 is formed on and around the multilayer epitaxial structure 2006 at a substantially even thickness.
  • the LED chip 2002 can produce white light with little unevenness of color, which is caused by variance in thickness of the phosphor film 2008.
  • the high-reflective electrode 2016 is formed as a p-electrode in the LED chip 2002. This significantly improves light extraction efficiency of the multilayer epitaxial structure 2006.
  • the light extraction efficiency of the multilayer epitaxial structure 2006 can be also improved by the depressions 2022 formed in the tantalum oxide film 2024 on the upper main surface of the n-AlGaN layer 2014, which is the light extraction surface.
  • the light reflective film 2040 improves the light extraction efficiency of the LED chip 2002.
  • the LED chip 2002 has much higher light extraction efficiency than an LED chip in which light emitted from a light emitting layer is emitted outside through a sapphire substrate or the like.
  • the p-electrode (the high-reflective electrode 2016) is formed on the substantially entire surface of a p-type layer (the p-AlGaN layer 2010) which is difficult to be configured to have a low resistance.
  • the power supply terminals 2030 and 2032 are directly connected to pads formed on a mounting substrate as described later.
  • the LED chip 2002 can emit white light by itself. This makes it possible to test the LED chip 2002 for its optical performance as described above before the LED chip 2002 is mounted. As a result, it can be prevented that a finished product including the mounting board on which the LED chip 2002 has been mounted is rejected due to the optical performance of the LED chip 2002. In this way, the ratio of accepted finished products can be improved.
  • the LED chip 2002 relating to the first modification example of_the second embodiment can be made smaller, when compared with the above-mentioned conventional LED chip which requires an auxiliary mounting substrate in addition to a base substrate that directly supports a multilayer epitaxial structure.
  • the anode and cathode power supply terminals 2030 and 2032 are positioned below the multilayer epitaxial structure 2006 in the LED chip 2002. Therefore, when the LED chip 2002 is mounted, no components that block light, such as a bonding wire, exist on or above the light extraction surface of the multilayer epitaxial structure 2006. Therefore, light emitted from the LED chip 2002 does not contain shadow.
  • the following part explains a manufacturing method for the LED chip 2002 described above with reference to Figs. 15 to 20.
  • a material to form each constituent of the LED chip 2002 is identified by a five-digit number whose first digit is one. The last four digits of the five-digit number represents a reference numeral identifying the corresponding constituent of the LED chip 2002.
  • an n-AlGaN layer 12014, an InGaN/AlGaN MQW light emitting layer 12012, and a p-AlGaN layer 12010 are formed by epitaxial growth on the sapphire substrate 2042, which is a single-crystal substrate, in the stated order using a MOCVD method (step A2 ) .
  • the sapphire substrate 2042 has a diameter of two inches and a thickness of 300 ⁇ m.
  • a mask is formed on a multilayer epitaxial structure 12006 composed of the layers 12014, 12012 and 12010, and an unmasked area of the multilayer epitaxial structure 12006 is removed by dry etching to such a depth that the sapphire substrate 2042 is exposed.
  • multilayer epitaxial structures 2006 each of which constitutes the LED chip 2002 (shown in Fig. 14B) , are formed on the sapphire substrate 2024 (step B2) .
  • an Rh/Pt/Au film is formed by a technique such as an electron beam evaporation method, on the upper main surface of each multilayer epitaxial structure 2006 (i.e. on the p-AlGaN layer 2010) .
  • the high-reflective electrode 2016 is formed (step C2) .
  • steps D2 to E2 shown in Fig. 16 are conducted.
  • Holes 2044 and 2046 are created by dry etching in a high-resistive Si substrate 12004 in a thickness direction of the substrate 12004.
  • the holes 2044 and 2046 are filled ' with Pt by electroless deposition, to form the through holes
  • step D2 a Ti/Pt/Au film is applied in a predetermined area on an upper main surface of the Si substrate 12004, to form the conductive film 2018.
  • an Au/Sn film is formed on a predetermined area on the conductive film 2018, to form the connection layer 2020 (step E2) .
  • the sapphire substrate 2042 is placed on the Si substrate 12004 so as that the high-reflective electrode 2016 formed on the sapphire substrate 2042 is in contact with the connection layer 2020 formed on the Si substrate 12004. Then, while being pressed together, the sapphire substrate 2042 and the Si substrate 12004 are heated until the connection layer 2020 reaches 300°C (step F2) .
  • the high-reflective electrode 2016 and the connection layer 2020 are eutectic-bonded.
  • a step of separating the sapphire substrate 2042 from the multilayer epitaxial structure 2006 is conducted (step G2) .
  • a YAG laser third harmonic beam LB having a wavelength of 355 nm is irradiated to the sapphire substrate 2042 and the Si substrate 12004 from a side of the sapphire substrate 2042 in such a manner that the beam scans the entire surface of the sapphire substrate 2042.
  • the irradiated laser beam is not absorbed by the sapphire substrate 2042, but only by an interface between the sapphire substrate 2042 and the n-AlGaN layer 2014.
  • heat is generated locally and breaks AlGaN bond around the interface.
  • the sapphire substrate 2042 is separated from the multilayer epitaxial structure 2006 in terms of crystal structure (step G2 ) .
  • the sapphire substrate 2042 is still adhered to the multilayer epitaxial structure 2006 by means of a layer including a metal Ga (a pyrolytic layer) .
  • the sapphire substrate 2042 and the multilayer epitaxial structure 2006 are immersed into hydrochloride or the like to dissolve the interface portion (step H2 ) .
  • the YAG laser third harmonic beam can be replaced with a KrF excimer laser having a wavelength . of 248 nm or a mercury emission line having a wavelength of 365 nm.
  • the multilayer epitaxial structure 2006 is transferred from the sapphire substrate 2042 to the Si substrate 12004 by separating the sapphire substrate 2042 in the above-described manner.
  • a substrate selected from more extensive options including a substrate that has higher heat dissipation (higher heat conductivity) than a substrate used for epitaxial growth can be used as a base substrate.
  • a silicon nitride film is formed by high-frequency sputtering or the like for insulation and surface protection, to form the insulating film 2028.
  • the silicon nitride film is formed on the upper main surface of the multilayer epitaxial structure 2006 (the n-AlGaN layer 2014) along its periphery, on the side surfaces of the multilayer epitaxial structure 2006, and on the extended portion 2018A of the conductive film 2018.
  • a Ti/Pt/Au film is applied, to form the electrode 2026 and the wiring 2036 (step J2) as one unit.
  • An Al film is applied, to form the light reflective film 2040 (step K2) .
  • the tantrum oxide (Ta 2 0 5 ) film 2024 is deposited by sputtering or the like on a part of the main surface of the n-AlGaN layer 2014 which is not covered by the electrode 2026, the insulating film 2028 and the wiring 2036. Then, the tantrum oxide film 2024 is partially removed by etching, to form the depressions 2022 (step L2) . Subsequently, a first macromolecule film 2048 is adhered to a front main surface, of the Si substrate 12004, on which the multilayer epitaxial structure 2006 is formed, by means of a polyester adhesive layer (not shown in Fig. 19) (step M2) . When heated, the adhesive layer foams and loses adhesivity. After this, a back main surface of the Si substrate 12004 is polished so that the thickness of the Si substrate 12004 becomes 100 ⁇ m (step N2 ) . Thus, the through holes 2034 and
  • a Ti/Au film is applied in a predetermined area on the back main surface of the Si substrate 12004, to form the anode and cathode power supply terminals 2030 and 2032 (step 02) .
  • the first macromolecule film 2048 that has been adhered to the front main surface of the Si substrate 12004 is then removed.
  • a second macromolecule film 2050 is adhered to the back main surface of the Si substrate 12004 as a dicing sheet (step P2) .
  • the Si substrate 12004 is diced by a dicing blade (DB in Fig. 20) into individual LED chips 2002 (step R2) .
  • the LED chip 2002 is manufactured.
  • the anode and cathode power supply terminals 2030 and 2032 are formed on the back main surface of the Si substrate 2004, which is a base substrate, in the LED chip 2002.
  • one power supply terminal an anode power supply terminal in the second modification example
  • the other power supply terminal a cathode power supply terminal in the second modification example
  • the LED chip 2102 is the same as the LED chip 2002, in terms of a composition and a thickness of each of layers constituting a multilayer epitaxial structure, and a composition of a phosphor film. However, the LED chip 2102 is different from the LED chip 2002 in terms of a construction of electrodes formed on both main surfaces of the multilayer epitaxial structure.
  • the multilayer epitaxial structure of the LED chip 2102 is formed on the base substrate in the same manner as the multilayer epitaxial structure 2006. In detail, the multilayer epitaxial structure is first formed on a single-crystal substrate which is different from the base substrate, and then transferred to the base substrate. Fig.
  • FIG. 21A is a plan view illustrating the LED chip 2102 relating to the second modification example of the second embodiment, and Fig. 21B illustrates a cross-section of the LED chip 2102 along a line GG shown in Fig. 21A.
  • Fig. 21A shows the LED chip 2102 after removing a phosphor film 2108 (shown in Fig. 21B) .
  • the LED chip 2102 is formed in such a manner that a multilayer epitaxial structure 2106 and the phosphor film 2108 are formed on an n-type SiC substrate 2104, which is a base substrate (hereinafter referred to as "an SiC substrate 2104") .
  • a main surface of the SiC substrate 2104 is slightly larger than a main surface of the multilayer epitaxial structure 2106.
  • the multilayer epitaxial structure 2106 is provided on one of the main surfaces of the SiC substrate 2104 with a space being retained along a periphery of- the substrate 2104.
  • the multilayer epitaxial structure 2106 is made up of a p-AlGaN layer 2110, an InGaN/AlGaN MQW light emitting layer 2112, and an n-AlGaN layer 2114.
  • the layer 2110 is the closest to the SiC Substrate 2104, and then the layers 2112 and 2114 are formed in the stated order.
  • the multilayer epitaxial structure 2106 has a diode structure.
  • a multilayer dielectric film 2116 made of Si0 2 /Ta0 5 and a high-reflective electrode 2118 made of Rh/Pt/Au are formed on a back main surface of the p-AlGaN layer 2110.
  • the multilayer dielectric film 2116 is formed by partially removing a sheet-like multilayer dielectric film by etching with a predetermined pattern.
  • the p-AlGaN layer 2110 is electrically connected to the high-reflective electrode 2118 in areas which are not covered by the multilayer dielectric film 2116.
  • a conductive film 2120 is formed on an upper main surface of the SiC substrate 2104 so as to correspond to the high-reflective electrode 2118.
  • the conductive film 2120 is made of Ti/Pt/Au, and is connected to the high-reflective electrode 2118 by a connection layer 2122 which is made of a conductive material such as Au/Sn.
  • a Ti/Au anode power supply terminal 2124 is formed on the entire back main surface of the SiC substrate 2104.
  • the high-reflective electrode 2118 is electrically connected to the anode power supply terminal 2124 by means of the connection layer 2122, the conductive film 2120 and the SiC substrate 2104.
  • An ITO transparent electrode 2126 and an Si0 2 /Ta 2 0 5 multilayer dielectric film 2128 are formed in this order on an upper main surface of the n-AlGaN layer 2114.
  • An Si0 2 insulating film 2130 is formed on an area, on the upper main surface of the SiC substrate 2104, in which the multilayer epitaxial structure 2106 is not formed.
  • An insulating film 2132 made of silicon nitride is formed on the side surfaces of the multilayer epitaxial structure 2106 and on a part of an upper main surface of the multilayer epitaxial structure 2106 (so as to frame the upper main surface) .
  • a rectangular cathode power supply terminal 2134 formed by a Ti/Pt/Al film is provided on the insulating film 2130.
  • a side of the ITO transparent electrode 2126 and a side of the cathode power supply terminal 2134 are connected to each other by means of a wiring 2136 that is formed along the side surface of the multilayer epitaxial structure 2106.
  • the wiring 2136 is formed by a Ti/Pt/Al film, and electrically insulated from the multilayer epitaxial structure 2106 by the insulating film 2132.
  • a light reflective film 2138 of a Ti/Pt/Al film is formed so as to surround the multilayer epitaxial structure 2106 on the insulating film 2130.
  • the light reflective film 2138 is substantially U-shaped.
  • the phosphor film 2108 covers the side surfaces of the multilayer epitaxial structure 2106 and a main surface (a light extraction surface) of the multilayer epitaxial structure 2106 which is opposite to a main surface to which the SiC substrate 2104 is connected. As shown in Fig. 21B, a large portion of the cathode power supply terminal 2134 is not covered by the phosphor film 2108.
  • the light emitting layer 2112 in the multilayer epitaxial structure 2106 emits near-ultraviolet light having a wavelength of 390 nm.
  • the multilayer epitaxial structure 2106 is positioned between mirror structures, i.e. the multilayer dielectric films 2116 and 2128.
  • the mirror structure closer to the p-AlGaN layer 2110 has a reflectance of 99% or over, and the mirror structure closer to the n-AlGaN layer 2114 has a reflectance of 90% or over.
  • a resonant LED structure is formed.
  • the near-ultraviolet light having a wavelengthof 390 nm emitted from the light emitting layer 2112 is emitted through the multilayer dielectric film 2128, which is the mirror structure closer to the n-AlGaN layer 2114 and has a lower reflectance, and absorbed by the phosphor film 2108.
  • the phosphor film 2108 converts the near-ultraviolet light into white light. Having a resonant LED structure, the LED chip 2102 relating to the second modification example of the second embodiment has a better light extraction efficiency in a direction perpendicular to the light emitting layer 2112.
  • the thickness of the p-AlGaN layer 2110 and that of the n-AlGaN layer 2114 are reduced, an electric current is likely to expand in a horizontal direction unevenly. This may cause light to be emitted unevenly from the light emitting layer 2112. The uneven light emission becomes more notable as a light emission area becomes large.
  • power is supplied to the p-AlGaN layer 2110 through the high-reflective electrode 2118.
  • the electrode 2118 is formed on the substantially entire surface of the p-AlGaN layer 2110 since the multilayer dielectric film 2116 is formed by partially etching a sheet-like multilayer dielectric film.
  • the electrode 2126 is formed on the entire main surface of the n-AlGaN layer 2114.
  • an electric current can be evenly injected to the entire light emitting layer.2112. This enables the entire light emitting layer 2112 evenly emit light, with it being possible to achieve a lower operation voltage.
  • the LED chip 2102 does not include an insulating substrate such as a sapphire substrate, an ability to withstand static electricity is improved.
  • the anode power supply terminal 2124 is directly connected to a pad formed on a mounting substrate, and the cathode power supply terminal 2134 is connected to another pad by a bonding wire .
  • the second modification example of the second embodiment can achieve the same effects as the first modification example.
  • the LED chip 2102 can emit white light by itself. This makes it possible to test the LED chip 2102 for its optical performance as described above before the LED chip 2102 is mounted. As a result, it can be prevented that a finished product including the mounting board on which the LED chip 2102 is mounted is rejected due to the optical performance of the LED chip 2102. In this way, the ratio of accepted finished products can be improved.
  • the LED chip 2102 relating to the second modification example of the second embodiment can be made smaller, when compared with the above-mentioned conventional LED chip which requires an auxiliary mounting substrate- in addition to a base substrate that directly supports a multilayer epitaxial structure.
  • the anode power supply terminal 2124 is formed on the back main surface of the SiC substrate 2104, and the cathode power supply terminal 2134 is formed on the upper main surface of the SiC substrate 2104.
  • the both anode and cathode power supply terminals 2124 and 2134 are positioned closer to the SiC substrate 2104 than the light extraction surface of the multilayer epitaxial structure 2106.
  • the anode power supply terminal 2124 is electrically connected to a p-electrode (the high-reflective electrode 2118) by the SiC substrate 2104.
  • the cathode power supply terminal 2134 is connected to an n-electrode (the ITO transparent electrode 2126) by the wiring 2136 that extends from the ITO transparent electrode 2126 towards the side surface of the n-AlGaN layer 2114.
  • the LED chip 2102 When the LED chip 2102 is mounted, no components that block light, such as a bonding wire, exist on or above the light extraction surface of the multilayer epitaxial structure 2106. Therefore, light emitted from the LED chip 2102 does not contain shadow.
  • the following part explains a manufacturing method for the LED chip 2102 described above, with reference to Figs. 22 to 27. In Figs .22 to 27 , a material to form each constituent of the LED chip 2102 is identified by a five-digit number whose first digit is one.
  • an n-AlGaN layer 12114, an InGaN/AlGaN MQW light emitting layer 12112, and a p-AlGaN layer 12110 are formed by epitaxial growth on a sapphire substrate 2140, which is a single-crystal substrate, in the stated order using a MOCVD method (step A3) .
  • the sapphire substrate 2140 has a diameter of two inches and a thickness of 300 ⁇ m.
  • a mask is formed on a multilayer epitaxial structure 12106 composed of the layers 12114, 12112 and 12110, and an unmasked are of the multilayer epitaxial structure 12106 is removed by dry etching to such a depth that the sapphire substrate 2140 is exposed.
  • multilayer epitaxial structures 2106 each of which constitutes the LED chip 2102 (shown in Fig. 21B) are formed on the sapphire substrate 2140 (step B3) .
  • an Si0 2 /Ta 2 0 5 multilayer dielectric film is formed on an upper main surface of each multilayer epitaxial structure 2106 (the p-AlGaN layer 2110) by RF sputtering or the like.
  • the Si0 2 /Ta 2 ⁇ 5 multilayer dielectric film is partially removed by etching to such a depth that the p-AlGaN layer 2110 is exposed, to form the multilayer dielectric film 2116 (step C3) .
  • an Rh/Pt/Au film is applied by a technique such as an electron beam evaporation method.
  • the high-reflective electrode 2118 is formed (step D3) .
  • a step E3 shown in Fig. 23 is conducted.
  • an Si0 2 film is formed on one of main surfaces of an n-type SiC substrate 12104 so as to cover the entire surface, an area of the Si0 2 film in which the conductive film 2120 is to be formed is removed.
  • the insulating film 2130 is formed 2120.
  • a Ti/Pt/Au film is applied in the Si0 2 -film removed area, to form the conductive film 2120.
  • an Au/Sn film 12122 is formed (step E3) .
  • the sapphire substrate 2140 is placed on the SiC substrate 12104 so as that the high-reflective electrode 2118 formed on the sapphire substrate 2140 is in contact with the Au/Sn film 12122 formed on the SiC substrate 12104.
  • step F3 the high-reflective electrode 2118 and the Au/Sn film 12122 are eutectic-bonded. Consequently, since the Au/Sn film 12122 is processed to be the connection layer 2122, the high-reflective electrode 2118 and the conductive film 2120 are physically and electrically connected together.
  • steps G3 and H3 shown in Fig. 24 are conducted to separate the sapphire substrate 2140 from the multilayer epitaxial structure 2106.
  • the steps G3 and H3 are the same as the steps G2 and H2 (shown in Fig. 17) described in the first modification example of the second embodiment, and therefore not repeatedly explained here .
  • the sapphire substrate 2140 is separated, and the multilayer epitaxial structure 2106 and the like are transferred from the sapphire substrate 2140 to the SiC substrate 12104.
  • an upper main surface of the n-AlGaN layer 2114 which is opposite to a lower main surface to which the light emitting layer 2112 is connected is flattened using a mechanical or a chemical process.
  • an ITO film is applied on the upper main surface of the n-AlGaN layer 2114 by sputtering or the like, to form the ITO transparent electrode 2126.
  • the multilayer dielectric film 2128 is formed by sputtering or the like (step J3) .
  • the insulating film 2132 is formed by applying a silicon nitride film by sputtering or the like (step K3) .
  • a Ti/Pt/Al film is deposited in predetermined areas on the resulting surface after the step K3, to form the cathode power supply terminal 2134, the wiring 2136, and the light reflective film 2138 simultaneously (step L3) .
  • a first macromolecule film 2142 is adhered to a front main surface, of the SiC substrate 12104, on which the multilayer epitaxial structure 2106 is formed, similarly to the first modification example of the second embodiment (step M3) .
  • a back main surface of the SiC substrate 12104 is polished so that the thickness of the SiC substrate 12104 becomes 100 ⁇ m.
  • a Ti/Au film 12124 is then applied on the back main surface of the SiC substrate 12104, to form the anode power supply terminal 2124 (shown in Fig. 21B) (step N3) .
  • the first macromolecule film 2142 that has been adhered to the front main surface of the SiC substrate 12104 is then removed.
  • Fig. 28A is a plan view illustrating a white LED array chip 2202 which is one type of a semiconductor light emitting device (hereinafter referred to as "an LED array chip 2202") , Fig.
  • FIG. 28B illustrates a cross-section of the LED array chip 2202 along a line HH shown in Fig. 28A
  • Fig. 28C illustrates how LEDs are connected in the LED array chip 2202.
  • Fig. 28A shows the LED array chip 2202 after removing a phosphor film 2208 (shown in Fig. 28B and mentioned later) .
  • a cross-section along each of a line II and a line JJ shown in Fig. 28A is the same as the cross-section shown in Fig. 28B.
  • the LED array chip 2202 is formed in such a manner that nine LED D01 to D09 are arranged in a matrix of 3 ⁇ 3 as shown in Fig.28A.
  • the LED array chip 2202 is a square approximately 1.2 mm on a side.
  • the LEDs D01 to D09 each have the same construction as the LED chip 2002 relating to the first modification example of the second embodiment, except for a pattern of depressions formed in order to improve light extraction efficiency and a construction of an n-electrode.
  • the LEDs D01 to D09 are connected in series-parallel in the LED array chip 2202 as shown in Fig. 28C.
  • the LEDs D01 to D09 are divided into groups each of which has three LEDs connected in series in a row direction, and the groups are connected in parallel. It is mentioned later how adjacent LEDs are connected to each other in the LED array chip 2202.
  • the LED array chip 2202 includes an A1N substrate 2204 as a base substrate to support a multilayer epitaxial structure 2206.
  • the multilayer epitaxial structure 2206 constituting each of the LEDs D01 to D09 is made up of a p-AlGaN layer 2210, an InGaN/AlGaN MQW light emitting layer 2212, and an n-AlGaN layer 2214 as in the LED chip 2002 relating to the first modification example of the second embodiment shown in Fig.14B.
  • the layer 2210 is the closest to the A1N substrate 2204, and then the layers 2212 and 2214 are formed in the stated order.
  • an Rh/Pt/Au p-electrode 2216 which is a high-reflective electrode, is formed.
  • a Ti/Pt/Au conductive film 2218 is formed on an upper main surface of the A1N substrate 2204.
  • the conductive film 2218 and the p-electrode 2216 are physically and electrically connected to each other by means of an Au/Sn connection layer 2220.
  • An upper main surface of the n-AlGaN layer 2214 i.e. a light extraction surface of the multilayer epitaxial structure 2206
  • a Ti/Pt/Al n-electrode 2226 is formed along one side of the upper main surface of the n-AlGaN layer 2214 of each multilayer epitaxial structure 2206.
  • An insulating film 2228 made of silicon nitride is formed so as to cover side surfaces and a part of an upper main surface of the multilayer epitaxial structure 2206.
  • the following part describes how the LEDs D04 to D06 are connected in series.
  • the LEDs 04, 05 and 06 are connected in series in this order in the following manner.
  • a conductive film 2218 of the LED D04 is connected to an n-electrode 2226 of the LED D05 by a bridging wire 2234A.
  • a conductive film 2218 of the LED D05 is connected to an n-electrode 2226 of the LED D06 by a bridging wire 2234B.
  • a Ti/Pt/Al cathode power supply terminal 2230 is formed in a left-half area of the upper main surface of the A1N substrate 2204, and a Ti/Pt/Al anode power supply terminal 2232 is formed in a right-half area.
  • An n-electrode 2226 of the LED D04 is electrically connected to the cathode power supply terminal 2230 by a wiring 2236A.
  • n-electrodes 2226 of the LEDs DOl and D07 are connected to the cathode power supply terminal 2230.
  • the n-electrodes 2226 of the LEDs DOl, D04 and D07 are electrically connected in parallel.
  • a conductive film 2218 of the LED D06 extends so as to overlap the anode power supply terminal 2232 and to be connected to the anode power supply terminal 2232 at the overlap.
  • conductive films 2218 of the LEDs D03 and D09 are connected to the anode power supply terminal 2232.
  • the p-electrodes 2216 of the LEDs D03, D06 and D09 are electrically connected in parallel.
  • the cathode and anode power supply terminals 2230 and 2232 also function as a wiring to connect, in parallel, the groups of the LEDs that are connected in series.
  • the cathode and anode power supply terminals 2230 and 2232 cover a major part of an area, on the upper main surface of the AlN substrate 2204, in which the multilayer epitaxial structures 2206 are not formed, and also function as a light-reflective film.
  • the nine LEDs DOl to D09 are connected in series-parallel and arranged in a matrix on the AlN substrate 2204 so that a space is left along edges of the AlN substrate 2204.
  • the phosphor film 2208 covers side surfaces and the light extraction surface of each of the LEDs DOl to D09 (the multilayer epitaxial structures 2206) formed on the AlN substrate 2204.
  • the phosphor film 2208 may have the same composition as the phosphor film 2008 relating to the first modification example of the second embodiment.
  • a Ti/Au film 2238 is formed on a back main surface of the AlN substrate 2204.
  • the light emitting layer 2212 of each of the LEDs DOl to D09 emits near-ultraviolet light having a wavelength of 390 nm.
  • the near-ultraviolet light emitted from the light emitting layer 2212 is, to a large extent, emitted from the n-AlGaN layer 2214 and absorbed by the phosphor film 2208.
  • the phosphor film 2208 converts the near-ultraviolet light into white light.
  • the p-electrode 2216 is formed as a high-reflective electrode, and the depressions 2222 are formed on the upper main surface of the n-AlGaN layer 2214 (the light extraction surface) .
  • These constructions contribute to significantly improve the light extraction efficiency of the multilayer epitaxial structure 2206.
  • the cathode and anode power supply terminals 2230 and 2232 function as a light-reflective film. This construction contributes to improve light extraction efficiency of the LED array chip 2202.
  • the Ti/Au film 2238 is directly connected to a pad formed on a mounting substrate .
  • the cathode power supply terminal 2230 and the anode power supply terminals 2232 are each connected to a power-supply pad formed on the mounting substrate by wire bonding.
  • the LED array chip 2202 includes the phosphor film 2208, the LED array chip 2202 can emit white light by itself. This and other features of the LED array chip 2202 produce the same effects as the first and second modification examples of the second embodiment.
  • the following part describes a manufacturing method for the LED array chip 2202 described above, with reference to Figs. 29 to 32. In Figs. 29 to 32, a material to form each constituent of the LED array chip 2202 is identified by a five-digit number whose first digit is one.
  • an n-AlGaN layer 12214, an InGaN/AlGaN MQW light emitting layer 12212, and a p-AlGaN layer 12210 are formed by epitaxial growth on a sapphire substrate 2240, which is a single-crystal substrate, in the stated order using a MOCVD method (step A4) .
  • the sapphire substrate 2240 has a diameter of two inches and a thickness of 300 ⁇ m.
  • a mask is formed on a multilayer epitaxial structure 12206 composed of the layers 12214, 12212 and 12210, and an unmasked area of the multilayer epitaxial structure 12206 is removed by dry etching to such a depth that the sapphire substrate 2240 is exposed.
  • multilayer epitaxial structures 2206 which constitute the LED array chip 2202 (shown in Fig. 28B) , are formed on the sapphire substrate 2240 (step B4) .
  • an Rh/Pt/Au film is formed by a technique such as an electron beam evaporation method, on the upper main surface of each multilayer epitaxial structure 2206 (i.e. the p-AlGaN layer 2210) .
  • the p-electrode 2216 is formed (step C4) .
  • a step D4 shown in Fig. 30 is conducted.
  • a Ti/Pt/Au film is applied in a predetermined ar.ea on an upper main surface of an AlN substrate 12204, to form the conductive film 2218.
  • An Au/Sn film 12220 is applied on part of the conductive film 2218, to form the connection layer 2220.
  • a Ti/Au film 12238 is plated on the entire back main surface of the AlN substrate 12204.
  • the sapphire substrate 2240 is placed on the AlN substrate 12204 so as that the p-electrode 2216 formed on the sapphire substrate 2240 is in contact with the Au/Sn film 12220 formed on the AlN substrate 12204. Then, while being pressed together, the sapphire substrate 2240 and the AlN substrate 12204 are heated until the Au/Sn film 12220 reaches approximately 300°C (step E4) . Thus, the p-electrode 2216 and the Au/Sn film 12220 are eutectic-bonded together. Since the Au/Sn film 12220 is processed to be the connection layer 2220, the p-electrode 2216 and the conductive film 2218 are physically and electrically connected together.
  • steps F4 and G4 are conducted to separate the sapphire substrate 2240 from the multilayer epitaxial structure 2206.
  • the steps F4 and G4 are the same as the steps G2 and H2 (shown in Fig. 17) described in the first modification example of the second embodiment, and therefore not repeatedly explained here.
  • a step H4 (shown in Fig. 31) is conducted.
  • a silicon nitride film is formed by high-frequency sputtering or the like for insulation and surface protection, to form the insulating film 2228.
  • the silicon nitride film is formed along a periphery of the upper main surface of the multilayer epitaxial structure 2206 (the n-AlGaN layer 2214) , and on the side surfaces of the multilayer epitaxial structure 2206.
  • anisotropic etching is conducted, using KOH solution or the like, to an area of the upper main surface of the n-AlGaN layer 2214 in which the insulating film 2228 is not formed.
  • the depressions 2222 are formed (step 14) .
  • a Ti/Pt/Al film is applied in predetermined areas on the resulting surface after the step 14, to form the n-electrode 2226, the bridging wire 2234, the wiring 2236, and the cathode and anode power supply terminals 2230 and 2232 simultaneously (step J4).
  • a macromolecule film 2242 is adhered to the back main surface of the AlN substrate 12204 as a dicing sheet.
  • the AlN substrate 12204 is diced by a dicing blade (DB in Fig 32) into individual LED array chips 2202 (step L4) .
  • the LED array chip 2202 is manufactured.
  • the LED array chip 2202 includes the nine LEDs DOl to D9 (light emitting elements), and is a square approximately 1.2 mm on a side.
  • the LED array chip 2202 may include any number of LEDs (light emitting elements) .
  • Fig. 33 is an external perspective view illustrating a white LED module 2300 including LED chips 2002 relating to the first modification example of the second embodiment (shown in Fig. 14B) . This LED module 2300 is attached to a lighting unit 2332 (mentioned later and shown in Figs. 36A and 36B) .
  • the LED module 2300 includes a ceramics substrate 2302 that is in a shape of a circle having a diameter of 5 cm and is made of AlN and 217 resin lenses 2304.
  • a guiding depression 2306 used to attach the LED module 2300 to the lighting unit 2332 and terminals 2308 and 2310 to receive a power supply from the lighting unit 2332 are provided in the ceramics substrate 2302.
  • Fig.34A is a plan view illustrating the LED module 2300
  • Fig. 34B illustrates a cross-section of the LED module 2300 along a line KK shown in Fig. 34A
  • Fig. 34C is an enlargement view illustrating a chip mounted area shown in Fig. 34B. As shown in Fig.
  • a gold plating 2312 is applied to a back main surface of the ceramics substrate 2302 for improving heat dissipation.
  • the LED chip 2002 is mounted at a location, on an upper surface of the ceramics substrate 2302, corresponding to a center of each of the lenses 2304 having a shape of a circle as shown in Fig.34A.
  • 217 LED chips 2002 are mounted on the ceramics substrate 2302.
  • the ceramics substrate 2302 is constituted by two ceramics substrates 2314 and 2316 each of which is 0.5 mm in thickness and mainly made of AlN. Other than AlN, the ceramics substrate 2314 and 2316 can be made of Al 2 0 3 , BN, MgO, ZnO, SiC or diamond.
  • the LED chips 2002 are mounted on the lower ceramics substrate 2316. Taper through holes 2318 are provided in the upper ceramics substrate 2314, so as to create spaces for mounting the LED chips 2002.
  • a cathode pad 2320 and an anode pad 2322 are provided at the location, on an upper surface of the ceramics substrate 2316, where each LED chip 2002 is to be mounted.
  • Each of the cathode pad 2320 and the anode pad 2322 is made up of Au plating applied on copper (Cu) .
  • the cathode power supply terminal 2032 and the anode power supply terminal 2030 of the LED chip 2002 (shown in Fig.
  • the cathode pad 2320 and the anode pad 2322 on which PbSn solder has been formed are respectively connected to the cathode pad 2320 and the anode pad 2322 on which PbSn solder has been formed.
  • a step of forming the PbSn solder on the cathode pad 2320 and the anode pad 2322 can be omitted, if AuSn solder is plated beforehand on the cathode power supply terminal 2032 and the anode power supply terminal 2030.
  • the ceramics substrate 2302 is heated through a reflow furnace to a temperature equal to a melting point of the solder.
  • the 217 LED chips 2002 can be simultaneously connected to the ceramics substrate 2302.
  • This reflow soldering process can be conducted if a shape of each of the cathode pad 2320 and the anode pad 2322, an amount of the applied solder, and a shape of the anode power supply terminal 2030 and the cathode power supply terminal 2032 are optimized.
  • a silver paste or a bump may be used instead of the solder.
  • the LED chips 2002 Before being mounted, the LED chips 2002 have been tested for their optical performance, such as unevenness of color and a color temperature, and have passed the test.
  • the LED chip 2002 includes the phosphor film 2008, and can emit white light by itself. As described above, this makes it possible to test the LED chip 2002 for its optical performance before mounting.
  • An aluminum reflection film 2324 is formed on a wall of each through hole 2318 provided in the upper ceramics substrate 2314 and on an upper surface of the ceramics substrate 2314 as shown in Fig. 34C. After mounted on the ceramics substrate 2316, the LED chips 2002 are covered by a first resin (e.g. a silicone resin
  • Fig. 35A is a plan view illustrating the LED module 2300 after removing the lenses 2304 and the upper ceramics substrate 2314.
  • the anode pad 2322 and the cathode pad 2320 are provided at the location, on the upper main surface of the ceramics substrate 2316, where each LED chip 2002 is to be mounted.
  • the anode pads 2322 and the cathode pads 2320 are connected by the wiring pattern 2330 in such a manner that 31 LED chips 2002 are connected in series and seven groups of the 31 LED chips 2002 are connected in parallel.
  • the wiring pattern 2330 is connected at one end to the positive terminal 2308 (shown in Fig. 34A) by a through hole (not shown in Fig. 35A) , and connected at the other end to the negative terminal 2310 (shown in Fig. 34A) by another through hole (not shown in Fig. 35A) .
  • the LED module- 2300 described above is attached to the lighting unit 2332.
  • the LED module 2300 and the lighting unit 2332 constitute a lighting apparatus 2334.
  • Fig. 36A is a schematic perspective view illustrating the lighting apparatus 2334, and Fig.
  • the 34B is a bottom plan view illustrating the lighting apparatus 2334.
  • the lighting unit 2332 is, for example, fixed on a ceiling of a room.
  • the lighting unit 2332 includes a power supply circuit (not shown in Figs. 36A and 36B) that converts alternating-current power (e.g. 100 V, 50/60Hz) supplied from a commercial power source into direct-current power required for driving the LED module 2300.
  • alternating-current power e.g. 100 V, 50/60Hz
  • the lighting unit 2332 has a circular depression 2336 in which the LED module 2300 is to be fitted.
  • a bottom surface of the circular depression 2336 is flat.
  • An internal thread (not shown in Fig.
  • the following part describes a procedure of attaching the LED module 2300 to the lighting unit 2332.
  • the LED module 2300 is fitted in the circular depression 2336 in the following manner.
  • the ceramics substrate 2302 of the LED module 2300 is positioned between the bottom surface of the circular depression 2336 and the power supply terminals 2338 and 2340.
  • the guiding protrusion 2342 is fitted in the guiding depression 2306, so as to align the positive terminal 2308 and the negative terminal 2310 with the power supply terminal 2338 and the power supply terminal 2340 respectively.
  • the ring screw 2346 to which the O-ring 2344 has been attached is screwed into the circular depression 2336 and fixed.
  • the positive and negative terminals 2308 and 2310 are respectively connected to the power supply terminals 2338 and 2340, so that the terminals 2308 and 2310 are electrically connected to the terminals 2338 and 2340 reliably.
  • the substantially entire lower surface of the ceramics substrate 2302 is connected to the flat bottom surface of the circular depression 2336. This enables heat generated in the LED module 2300 to be effectively conducted to the lighting unit 2332, thereby improving a cooling effect of the LED module 2300.
  • silicone grease may be applied to the lower surface of the ceramics substrate 2302 and the bottom surface of the circular depression 2336 to further improve the heat conduction efficiency from the LED module 2300 to the lighting unit 2332.
  • each LED chip 2002 When power is supplied to this lighting apparatus 2334 from a commercial power source, each LED chip 2002 emits white light in the manner described above. The white light is emitted through the lenses 2304. When an electric current of 1 A is applied to the LED module 2300, a total luminous flux of 4,000 lm, an on-axis luminous intensity of 10,000 cd, and an emission spectrum shown in Fig. 38 are observed.
  • the semiconductor light emitting devices relating to the first to third modification examples of the second embodiment are, as an example., used for lighting, such as a lighting module and a lighting apparatus. However, the semiconductor light emitting devices relating- to the second embodiment may be also used for display, to be specific, as a light source in a display element.
  • Such a display element includes a surface mounting device (SMD) LED which is formed in such a manner that a semiconductor light emitting device (e.g. an LED chip) is mounted on a ceramics substrate and sealed by a transparent epoxy resin.
  • a single SMD LED may be used by itself.
  • an SMD LED is mounted on a remote controller for a home electric appliance including a television, a video cassette recorder and an air conditioner, or used as a main switch lamp of such a home electric appliance .
  • a plurality of SMD LEDs may be combined to be used as dots provided in a dot matrix display device for displaying a letter, a number, a symbol and the like.
  • the second embodiment of the present invention is not limited to the above modification examples.
  • the second embodiment also includes the following modification examples .
  • a multilayer epitaxial structure (12006, 12106 and 12206) is formed by epitaxial growth on a sapphire substrate which is a single-crystal substrate (2042, 2140 and 2240) .
  • the multilayer epitaxial structure is divided into individual LED (array) chips (2002, 2102 and 2202) on the sapphire substrate (see step B2 in Fig. 15, step B3 in Fig. 22, and step B4 in Fig.
  • the second embodiment is not limited to such.
  • the multilayer epitaxial structure as a whole (12006, 12106 and 12206) may be first transferred to a base substrate (the high-resistive Si substrate 12004 in Fig. 16, the n-type SiC substrate 12104 in Fig.23 and the AlN substrate 12204 in Fig.30) which constitutes the LED (array) chip (2002, 2102 and 2202) .
  • the multilayer epitaxial structure is then divided into the individual LED (array) chips (2002, 2102 and 2202) on the base substrate.
  • TIRD EMBODIMENT Fig. 39 is an external perspective view illustrating a construction of an LED array chip 3002 which is one type of a semiconductor light emitting device.
  • Fig. 40 is a plan view illustrating the LED array chip 3002.
  • Fig. 30 mainly intends to illustrate how LEDs DI to D36 (described later) are arranged, and therefore does not show minute depressions and protrusions on the surfaces of the LEDs.
  • Fig. 40 does not show a phosphor film 3050 (shown in Fig. 39 and mentioned later) and depressions formed on a p-electrode (mentioned later) .
  • the LED array chip 3002 is formed in such a manner that a multilayer epitaxial structure including a light emitting layer is formed on a non-doped (high-resistive) SiC substrate 3004 which is a semiconductor substrate (hereinafter referred to as "an SiC substrate 3004") .
  • the multilayer epitaxial structure is formed like a circular cylinder as a whole.
  • the circular-cylinder-like multilayer epitaxial structure formed on the rectangular (square in the third embodiment) SiC substrate 3004 is hereinafter referred to as a cylinder member 3006.
  • the cylinder member 3006 is divided into a plurality of areas (12 areas in the third embodiment) by division grooves 3008 that radiate equiangularly .
  • the cylinder member 3006 is divided into 12 flabellate members with a central angle of around 30 degrees.
  • Each flabellate member is further divided into a plurality of areas (three areas in the third embodiment) in a diameter direction by two division grooves 3010 and 3011 that are formed concentrically.
  • the cylinder member 3006 formed by the multilayer epitaxial structure is divided into 36 areas (12x3), and each area constitutes an independent light emitting element, i.e. an LED.
  • the 36 LEDs are respectively identified by reference marks DI to D 36 as shown in Fig. 39 to be distinguished from each other.
  • the concentrical division grooves 3010 and 3011 are respectively positioned so that a light emitting layer of each of the LEDs DI to D36 has the substantially same area. This is achieved when the ratio of L01:L02:L03 (lengths L01, L02 and L03 are shown in Fig. 40) is 1:V2:V3, irrespective of a size (a diameter) of the cylinder member 3006.
  • the SiC substrate 3004 is a square approximately 2 mm on a side, and the cylinder member 3006 has a diameter of approximately 1.8 mm.
  • Fig. 41A illustrates a cross-section of LEDs Dl and D2 in the LED array chip 3002 along a line PP shown in Fig. 40
  • Fig. 41B illustrates a cross-section of LEDs D35 and D36 along a line QQ shown in Fig. 40.
  • Each of the LEDs DI to D36 is formed by a multilayer epitaxial structure having the same construction. The following description is made taking the LED D35 as an example.
  • Each LED is made up of an n-AlGaN buffer layer 3012 (having a thickness of 30 nm) , a DBR layer 3014 composed of 30 periods of n-AlGaN/GaN (having a total thickness of 3 ⁇ m) , an n-GaN clad layer 3016 (having an Si-doping amount of 3 ⁇ l0 18 cm -3 and a thickness of 200 nm) , an InGaN/GaN MQW light emitting layer 3018 composed of six periods of InGaN (having a thickness of 2 nm) /GaN (having a thickness of 8 nm) , a p-GaN clad layer 3020 (having an Mg-doping amount of IxlO 19 cm -3 and a thickness of 200 nm) , a p-GaN contact layer 3022 (having an Mg-doping amount of 3 ⁇ l0 19 cm
  • a light emitting layer (the MQW light emitting layer 3018) is sandwiched between a conductive layer (the n-GaN clad layer 3016 on a side of the SiC substrate 3004) and a conductive layer (the p-GaN clad layer 3020, the p-GaN contact layer 3022 and the n + -GaN regrowth layer 3024 on a side of a light extraction surface) in each of the LEDs DI to D36 relating to the third embodiment.
  • An Ni/Au p-electrode 3026 is formed on the n + -GaN regrowth layer 3024 and the p-GaN contact layer 3022.
  • a Ti/Au n-electrode 3028 is formed on the n-GaN clad layer 3016.
  • the light emitting layer 3018 emits blue light having a wavelength of 460 nm. Depressions are formed at a predetermined interval on an upper surface of the p-electrode 3026, which is a light extraction surface, in order to improve light extraction efficiency.
  • the depressions are provided by forming the n + -GaN regrowth layer 3024 partially on the p-GaN contact layer 3022 in a manner described later. It should be noted that each of the semiconductor layers 3012, 3014, 3016, 3018, 3020, 3022 and 3024 making up the multilayer epitaxial structure that emits blue light may have a different composition.
  • Each layer may be made of a III-V nitride semiconductor which is generally represented by a chemical formula of B z Al x Ga ⁇ - x -y- z In y N ⁇ - v - w As v P Wr where O ⁇ x ⁇ l, O ⁇ y ⁇ l, O ⁇ z ⁇ l, O ⁇ x+y+z ⁇ l, O ⁇ v ⁇ l, O ⁇ w ⁇ l, O ⁇ v+w ⁇ l (generally represented as BAlGalnNAsP and hereinafter referred to as a GaN semiconductor material) . It is known that the GaN semiconductor material can emit light having a wavelength within a wide range of 200 nm (ultraviolet light) and 1700 nm (infrared light) depending on its composition.
  • the GaN semiconductor material has been commonly used to produce light having a shorter wavelength than blue-green light.
  • the 36 LEDs DI to D36 described above are connected in series on the SiC substrate 3004. The following part describes how the LEDs DI to D36 are connected to each other.
  • an Si 3 N 4 insulating film 3030 is formed so as to cover side surfaces of the LEDs DI, D2, D35 and D36 and the division groove 3011.
  • a wiring 3032a which is formed by a Ti/Pt/Au metal thin film, is provided to connect an n-electrode 3028a of the LED Dl and a p-electrode 3026B of the LED D2.
  • a wiring 3032b is formed on the insulating film 3030 to connect an n-electrode 3028c of the LED D35 and a p-electrode 3026d of the LED D36.
  • the LEDs D2 to D35 are connected by a wiring 3022.
  • an n-electrode 3028e of the LED D3 and a p-electrode 3026f of the LED D4 are connected by a wiring 3032C.
  • An n-electrode 3028g of the LED D6 and a p-electrode 3026h of the LED D7 are connected by a wiring 3032d.
  • the LED Dl to D36 are connected in series as shown in Fig. 42A.
  • the LED Dl is an LED on a higher potential end. Therefore, a p-electrode 3026a of the LED Dl is an anode electrode of the LED array chip 3002.
  • the LED D36 is an LED on a lower potential end. Therefore, an n-electrode 3028d of the LED D36 is a cathode electrode of the LED array chip 3002. As shown in Fig.
  • Ti/Pt/Au conductive patterns 3034 and 3036 are formed, so as to surround the multilayer epitaxial structure, on a front main surface, of the SiC substrate 3004, on which the multilayer epitaxial structure is formed.
  • the conductive pattern 3034 is connected to the p-electrode of the LED Dl by a wiring 3032e
  • the conductive pattern 3036 is connected to the n-electrode 3028d of the LED D36 by a wiring 3032f.
  • Fig. 42B illustrates a back main surface of the LED array chip 3002. As shown in Fig.
  • two Ti/Pt/Au power supply terminals 3038 and 3040 are formed on a main surface of the SiC substrate 3004 which is opposite to the front main surface on which the LEDs Dl to D36 are formed.
  • the power supply terminal 3038 is connected to the conductive pattern 3034 by two through holes 3042 and 3044 provided in the SiC substrate 3004.
  • the power supply terminal 3040 is connected to the conductive pattern 3036 by two through holes 3046 and 3048 provided in the SiC substrate 3004.
  • the power supply terminal 3038 is electrically connected to the p-electrode 3026a of the LED Dl
  • the power supply terminal 3040 is electrically connected to the n-electrode 3028d of the LED D36.
  • the through holes 3042, 3044, 3046 and 3048 are each formed by filling a hole having a diameter of 30 ⁇ m provided in the SiC substrate 3004 with Pt .
  • an electric current of 50 mA is applied to the 36 LEDs that are connected in series through the power supply terminals 3038 and 3040 with heat dissipation being ensured, an operation voltage of 120 V is observed.
  • each of the LEDs Dl to D36 can produce an even amount of light. This is because the light emitting layer 3018 in each of the LEDs Dl to D36 has substantially the same area, and an electric density of each LED is therefore substantially the same.
  • the phosphor film 3050 is formed on the front main surface of the SiC substrate 3004 so as to cover an upper surface and a side surface of the cylinder member 3006 (the multilayer epitaxial structure) .
  • the phosphor film 3050 is made of a light-transmitting resin such as silicone in which particles of a. yellow phosphor (Sr, Ba) 2 Si0 4 :Eu 2+ and fine - particles of Si0 2 are dispersed.
  • the phosphor film 3050 is applied at a substantially even thickness of approximately 50 ⁇ m on and around the cylinder member 3006.
  • the light-transmitting resin may be an epoxy resin or a polyimide resin instead of silicone.
  • the light emitting layer 3018 of each of the LEDs Dl to D36 emits blue light, and the phosphor within the phosphor film 3050 converts part of the blue light into yellow light. The blue light and the yellow light mix together, to generate white light.
  • the multilayer epitaxial structure including a light emitting layer is formed like a circular cylinder, and the phosphor film 3050 is applied on and around the multilayer epitaxial structure, at a substantially even thickness.
  • the phosphor film 3050 is formed like a circular-cylindrical case with bottoms.
  • a spot shape of light emitted from the LED array chip 3002 is substantially circular.
  • the LED array chip 3002 is suitable as a light source for lighting.
  • the DBR layer 3014 which is a light-reflective layer, is formed between the light emitting layer 3018 and the SiC substrate 3004.
  • the DBR layer 3014 reflects, towards a light extraction surface, 99% or more of blue light emitted from the light emitting layer 3018 towards the SiC substrate 3004. This improves light extraction efficiency of each LED in the LED array chip 3002.
  • the phosphor film 3050 covers, at the same thickness, not only the upper surfaces of the outmost LEDs Dl, D6, D7, D12, D15, D18, D19, D24, D25, D30, D31 and D36 but also outer side surfaces of these outmost LEDs. Accordingly, the phosphor film 3050. converts, into yellow light, not only blue light emitted from the upper surface of each of these LEDs but also blue light emitted from the side surface of the light emitting layer 3018 of each of these LEDs. Thus, unevenness of color can be reduced. In this description, blue light indicates light having a wavelength from 400 nm inclusive to 500 nm exclusive, and yellow light indicates light having a wavelength from 550 nm inclusive to 600 nm exclusive.
  • the LEDs Dl to D36 each emit light with a peak emission wavelength of 460 nm.
  • the LEDs Dl to D36 may be configured to emit light with a different peak emission wavelength within the above-mentioned range. It is generally accepted that unevenness of color occurs only in a white LED that uses visible light having a spectral component of a wavelength within a range of 380 nm and 780 nm (purple to red) for an excitation light source. In other words, unevenness of color does not occur in a white LED having near-ultraviolet light as an excitation light source.
  • the third embodiment is applicable to an LED having a light emitting layer that emits near-ultraviolet light to achieve the same effects of reducing unevenness of color for the same reasons stated above.
  • the third embodiment of the present invention is applicable to an LED including a light emitting layer that emits light including a spectral component of a wavelength at least within a range of 380 nm and 780 nm to reduce unevenness of color.
  • the application of the third embodiment is not limited to an LED including a light emitting layer that emits blue light having a peak emission wavelength of 460 nm as describe above.
  • the following part describes a manufacturing method for the LED array chip 3002 described above.
  • the manufacturing method of the LED array chip 3002 includes a variety of processes. The following part first describes a process of forming the cylinder member 3006 (shown in Fig. 39), with reference to Figs. 43 to 47.
  • a multilayer epitaxial structure is formed on an upper main surface of a non-doped SiC substrate 13004 shown in Fig. 43A (hereinafter simply referred to as "a substrate 13004") .
  • an etching resist (a positive resist) is applied on the entire upper main surface, of the substrate 13004, on which the multilayer epitaxial structure is formed, and the etching resist is then heated to be cured.
  • a resist film 3061 is formed as shown in Fig. 43B.
  • a photomask 3059 is placed on the substrate 13004 as shown in Fig. 44.
  • the photomask 3059 is formed by printing a pattern 519 in black on a glass plate.
  • the pattern 519 is formed in such a manner that a plurality of patterns 592 shown in Fig. 45A are closely arranged in a matrix.
  • the resist film 3061 is exposed using a mercury lamp while the photomask 3059 is placed on the substrate 13004.
  • areas of the resist film 3061 which correspond to not-printed transparent portions (white portions shown in Fig. 45A) of the photomask 3059 are softened.
  • the softened areas of the resist film 3061 are dissolved by an organic solvent, to be removed.
  • a resist mask 3063 shown in Fig 46A is formed. After the resist mask 3063 is formed, an Au film is formed on the entire upper main surface of the substrate 13004 by deposition.
  • metal masks 3058 are formed at locations of white circles shown in Fig. 46A.
  • Each metal mask 3058 masks an area in which the cylinder member 3006 is to be formed.
  • each metal mask 3058 masks the white portions shown in Fig. 45A.
  • An unmasked area of the multilayer epitaxial structure formed on the substrate 13004 is removed by dry etching to such a depth that the n-GaN clad layer 3016 (shown in Fig. 41B) is exposed. The dry etching is conducted by leaving the substrate 13004 within a gas including chlorine ions for a predetermined time.
  • half cylinder members 600 shown in Figs. 47A and 47B are formed.
  • the metal masks 3058 are removed by an iodine solvent .
  • a first etching step the half cylinder members 600 are formed as shown in Figs. 47A and 47B.
  • Fig. 47A illustrates part of a cross-section along a line SS shown in Fig. 47B
  • Fig. 47C is an enlargement view illustrating a portion U shown in Fig. 47B.
  • a second etching step is conducted to remove portions of the multilayer epitaxial structure which do not constitute the half cylinder members 600.
  • cylinder members 3006 (shown in Fig.39) are formed on the substrate 13004.
  • the reason for conducting the first and second etching steps to form the cylinder members 3006 is explained later.
  • the second etching step is the same as the first etching step except for that the photomask 3059 (shown in Fig. 44) has a different pattern. Accordingly, the second etching step is not repeatedly described in detail here, and only briefly mentioned in the following description of the manufacturing method of the LED array chip 3002. The following description is made with a particular focus on each one of the LED array chips 3002 on the substrate 13004.
  • Figs. 48 to 51 a material to form each constituent of the LED array chip 3002 is identified by a five-digit number whose first digit is -one. The last four digits of the five-digit number represents a reference numeral identifying the corresponding constituent of the LED array chip 3002.
  • Figs. 48 to 51 each illustrate a cross-section along a line RR shown in Fig. 40. Firstly, as shown in Fig.
  • an n-AlGaN buffer layer 13012, a DBR layer 13014 composed of 30 periods of n-AlGaN/GaN, an n-GaN clad layer 13016, an InGaN/GaN MQW light emitting layer 13018, a p-GaN clad layer 13020, and a p-GaN contact layer 13022 are formed on the non-doped SiC substrate 13004 in the stated order using a MOCVD method (step A5) .
  • the non-doped SiC substrate 13004 has a diameter of two inches and a thickness of 300 ⁇ m.
  • an Si0 2 film 3054 is formed on the p-GaN contact layer 13022, and a photoresist layer is then formed on the Si0 2 film 3054 in the following manner .
  • a parallel-line pattern in which lines are arranged at a predetermined interval e.g. 1200 lines/mm
  • a resist mask 3056 is formed (step B5) .
  • a portion of the Si0 2 film 3054 which is not masked by the resist mask 3056 is removed by etching (step C5) .
  • the resist mask 3056 is removed (step D5) .
  • an n + -GaN layer 13024 is regrown using a MOCVD method (step E5) .
  • a portion of the n + -GaN layer 13024 formed on the Si0 2 film 3054 is not shown in the step E5 shown in Fig. 49.
  • the portion of the n + -GaN layer 13024 formed on the Si0 2 film 3054 is then removed together with the Si0 2 film 3054 (step F5) .
  • the next step G5 is the first etching step described above.
  • the step G5 is conducted to create a surface to connect the n-electrode 3028 (shown in Fig.41) .
  • theAumetal mask 3058 is formed in the above-described manner.
  • the metal mask 3058 masks an area in which the p-electrode 3026 of each LED is to be formed.
  • An unmasked area of a lamination composed of the layers 13012 to 13024 is removed by dry etching to a depth of an approximately half of the thickness of the n-GaN clad layer 13016 (step G5) .
  • a surface 3060 to connect the n-electrode 3028 is created.
  • the metal mask 3058 is removed prior to the next step H5.
  • the step H5 is the second etching step mentioned above, and conducted to create a surface to form the conductive patterns 3034 and 3036, and the division grooves 3008, 3010 and 3011.
  • a metal mask 3062 is formed so as to mask the resulting surface after the step G5 except for areas in which the conductive patterns 3034 and 3036 and the division grooves 3008, 3010 and 3011 are to be formed.
  • this metal mask 3062 formation step (step H5) is the same as the first etching step (the step G5) except for that the photomask 3059 (shown in Fig. 44) which is used for exposure of the resist film 3061 has a different pattern.
  • Fig. 45B illustrates a pattern used in the metal mask 3062 formation step. Regarding Fig. 45B, 12 radiating bold lines 20108 correspond to areas in which the division grooves 3008 (see Fig. 40) are to be formed.
  • Two bold concentrical circles 20110 and 20111 respectively correspond to areas in which the division grooves 3010 and 3011 (see Fig. 40) are to be formed.
  • a black area surrounding a white area formed like a circle corresponds to an area in which a surface to form the conductive patterns 3034 and 3036 is to be created.
  • the metal mask 3062 is formed so as to mask areas which correspond to constituents of the cylinder member 3006. Unmasked areas of a lamination composed of the rest of the layer 13016 and the layers 13014 and 13012 are removed by dry etching to such a depth that the substrate 13004 is exposed, to create the conductive pattern formation surface 3064 and the division groove 3011 (3008 and 3010) .
  • the cylinder member 3006 (see Fig.
  • step H5 is formed.
  • the metal mask 3062 is removed prior to the next step.
  • the cylinder member 3006 is formed by conducting two different etching steps to create the surface to form the n-electrode 3028, which is positioned on the n-GaN clad layer 3016.
  • an Si 3 N 4 insulating film 13030 is formed by sputtering or the like for insulation and surface protection (step 15) .
  • a mask 3066 is then formed so as to mask the Si 3 N 4 film 13030 except for an area in which the p-electrode 3026 is to be formed.
  • stepJ5 An unmasked area of the Si 3 N 4 film 13030 is • removed by etching. After this, an Ni/Au thin film 13026 is applied by deposition. Thus, the Ni/Au p-electrode 3026 is formed (stepJ5) . A portion of the Ni/Au thin film 13026 formed on the mask 3066 (not shown in Fig. 50) is removed together with the mask 3066 prior to the next step.
  • the p-electrode 3026 may be formed by an ITO transparent thin film, instead of the Ni/Au thin film. The same procedure as in the step J5 is conducted to form the n-electrode 3028.
  • a mask 3068 is formed so as to mask the resulting surface after the step J5, except for an area in which the n-electrode 3028 is to be formed.
  • An unmasked area of the Si 3 N 4 film 13030 is removed by etching, and then a Ti/Au thin metal film 13028 is formed by deposition.
  • the n-electrode 3028 is formed (step K5) .
  • a portion of the Ti/Au film 13028 formed on the mask 3068 (not shown in Fig. 50) is removed together with the mask 3068 prior to the next step.
  • a mask 3070 is formed so as to mask the resulting surface after the step K5 except for an area in which each of the through holes 3042, 3044, 3046 and 3048 is to be formed.
  • An unmasked area is removed by etching, to form an opening 3072 that is 200 ⁇ m in depth.
  • the opening 3072 is filled with Pt by electroless deposition or the like
  • step L5 The mask 3070 is removed prior to the next step. Subsequently, a mask 3074 is formed so as to mask the resulting surface after the step L5, except for areas in which the conductive patterns 3034 and 3036 and the wiring 3032 are to be formed. Then, a Ti/Pt/Au thin metal film is formed by deposition. Thus, the Ti/Pt/Au conductive patterns 3034 and 3036 and the Ti/Pt/Au wiring 3032 are formed (step M5) .
  • a portion of the Ti/Pt/Au film which is formed on the mask 3074 (not shown in Fig. 51) is removed together with the mask 3074 prior to the next step.
  • a lower main surface of the SiC substrate 13004 is polished, so that the thickness of the SiC substrate 13004 becomes 150 ⁇ m and the through holes 3042, 3044, 3046 and 3048 are exposed on the lower main surface of the SiC substrate 13004 (step N5) .
  • a mask 3076 is formed so as to mask the lower main surface of the SiC substrate 13004 except for areas in which the power supply terminals 3038 and 3040 are to be formed.
  • a Ti/Pt/Au thin metal film is formed on the lower main surface of the SiC substrate 13004 by deposition.
  • the Ti/Pt/Au power supply terminals 3038 and 3040 are formed (step 05) .
  • a portion of the Ti/Pt/Au film which is formed on the mask 3076 (not shown in Fig. 51) is removed together with the mask 3076 prior to the next step.
  • the phosphor film 3050 is formed in the following manner.
  • a silicone resin in which particles of a yellow phosphor (Sr, Ba) 2 Si0 4 :Eu +2 and fine particles of Si0 2 are dispersed is applied by printing, and then heated to be cured.
  • the phosphor film 3050 is polished so that a thickness of the phosphor film 3050 in a direction perpendicular to the upper main surface of the SiC substrate 13004 becomes 50 ⁇ m (step P5) .
  • a color temperature of white light emitted from the LED array chip 3002 is determined by a ratio between a quantity of blue light from the light emitting layer 3018 and that of yellow light from the phosphor film 3050. The ratio is adjusted by a percentage of the phosphor particles in the silicone resin and the thickness of the phosphor film 3050. To be specific, when the percentage of the phosphor particles is higher or the thickness of the phosphor film 3050 is larger, the ratio of the yellow light is higher.
  • a high ratio of the yellow light means that the white light has a lower color temperature.
  • the phosphor film 3050 is formed in such a manner that the silicone resin including the phosphor is first applied at a thickness larger than a designed thickness, and then polished to have the designed thickness. This enables the phosphor film 3050 to be formed at an even thickness and to have the designed thickness . As a result, unevenness of color can be reduced, and a desired color temperature can be exactly achieved.
  • the substrate 13004 is divided into individual LED array chips 3002 by dicing. In this way, the LED array chip 3002 (shown in Fig. 39) is manufactured. Fig.
  • FIG. 52 is an external perspective view illustrating a white LED module 3200 including LED array chips 3002 described above (hereinafter simply referred to as "an LED module 3200") .
  • the LED module 3200 is attached to a lighting unit 3240 (mentioned later) .
  • the LED module 3200 includes a ceramics substrate 3202 that is in a shape of a circle having a diameter of 5 cm and is made of AlN and three lenses 3204, 3206 and 3208 made of glass .
  • a guiding depression 3210 used to attach the LED module 3200 to the lighting unit 3240 and terminals 3212 and 3214 to receive a power supply from the lighting unit 3240 are provided in the ceramics substrate 3202.
  • Fig. 53A is a plan view illustrating the LED module 3200, Fig.
  • Fig. 53B illustrates a cross-section of the LED module 3200 along a line XX shown in Fig. 53A
  • Fig. 53C is an enlargement view illustrating a portion Y shown in Fig. 53B.
  • a guiding hole (a through hole) 3216 is provided in the center of the ceramics substrate 3202 to attach the LED module 3200 to the lighting unit 3240.
  • a gold plating 3217 is applied to a lower surface of the ceramics substrate 3202 for improving heat dissipation.
  • the LED array chip 3002 is mounted at a location, on an upper surface of the ceramics substrate 3202, corresponding to a center of each of the lenses 3204, 3206 and 3208 having a shape of a circle as shown in Fig. 53A.
  • three LED array chips 3002 are mounted on the ceramics substrate 3202.
  • the ceramics substrate 3202 is made up of two ceramics substrates 3201 and 3203 each of which has a thickness of 0.5 mm and is mainly made of AlN.
  • the ceramics substrates 3201 and 3203 may be made of Al 2 0 3 , BN, MgO, ZnO, SiC and diamond, instead of AlN.
  • the LED array chips 3002 are mounted on the lower ceramics substrate 3201.
  • Taper through holes 3215 are provided in the upper ceramics substrate 3203, so as to create spaces for mounting the LED array chips 3002.
  • a cathode pad 3218 and an anode pad 3220 are provided at the location, on an upper surface of the ceramics substrate 3201, where each LED array chip 3002 is to be mounted.
  • Each of the cathode pad 3218 and the anode pad 3220 is made up of nickel (Ni) plating and then gold (Au) plating applied on copper (Cu) .
  • the LED array chip 3002 is mounted on the ceramics substrate 3201 in such a manner that the SiC substrate 3004 is adhered to the ceramics substrate 3201.
  • the power supply terminals 3036 and 3038 are respectively connected to the cathode pad 3218 and the anode pad 3220 using solder. Instead of solder, a gold bump or a silver paste may be used.
  • solder a gold bump or a silver paste may be used.
  • the LED array chip 3002 no components that block light, such as a bonding wire, exist on or above a light extraction surface. Therefore, light emitted from the LED array chip 3002 does not contain shadow. This feature is highly valuable for a light source used for lighting. Before being mounted, the LED array chips 3002 have been tested for their optical performance, such as unevenness of color, and have passed the test.
  • the LED array chip 3002 includes the phosphor film 3050, and can emit white light by itself.
  • An aluminum reflection film 3219 is formed on a wall of each through hole 3215 provided in the upper ceramics substrate 3203 and on an upper surface of the ceramics substrate 3203.
  • the lenses 3204, 3206 and 3208 are adhered to the ceramics substrate 3203 using an adhesive agent 3221.
  • the adhesive agent 3221 may be a silicone resin, an epoxy resin or the like.
  • Fig.54A is a plan view illustrating the LED module 3200 after removing the lenses 3204, 3206 and 3208.
  • the three LED array chips- 3002 are distinguished from each other by addition of marks of A, B and C.
  • the anode pad 3220 and the cathode pad 3218 are provided at the location, on the upper surface of the ceramics substrate 3201, where each of the LED array chips 3002A, 3002B ' and 3002C is mounted.
  • the anode pads 3220 that are respectively connected to the LED array chips 3002A, 3002B and 3002C are electrically connected to each other by a wiring pattern 3236.
  • the wiring pattern 3236 is connected to the positive terminal 3212 at its end by a through hole 3237.
  • the cathode pads 3218 that are respectively connected to the LED array chips 3002A, 3002B and 3002C are electrically connected to each other by a wiring pattern 3238.
  • the wiring pattern 3238 is connected to the negative terminal 3214 at its end by a through hole 3239. In other words, the LED array chips 3002A, 3002B and 3002C are connected in parallel by the wiring patterns 3236 and 3238.
  • the LED module 3200 described above is attached to the lighting unit 3240.
  • the LED module 3200 and the lighting unit 3240 constitute a lighting apparatus 3242.
  • Fig. 55A is a schematic perspective view illustrating the lighting apparatus 3242
  • Fig. 55B is a bottom plan view illustrating the lighting apparatus 3242.
  • the lighting unit 3240 is, for example, fixed on a ceiling of a room.
  • the lighting unit 3240 includes a power supply circuit (not shown in Figs.55A and 55B) that converts alternating-current power (e.g. 100 V, 50/60Hz) supplied from a commercial power source into direct-current power required for driving the LED module 3200.
  • alternating-current power e.g. 100 V, 50/60Hz
  • the lighting unit 3240 has a circular depression 3244 in which the LED module 3200 is to be fitted.
  • a bottom surface of the circular depression 3244 is flat.
  • An internal thread (not shown in Fig. 56) is created, in the vicinity of an open end of the circular depression 3244, on an inside wall of the circular depression 3244.
  • Flexible power supply terminals 3246 and 3248 and a guiding protrusion 3230 protrude from ' the inside wall of the circular depression 3244, between the internal thread and the bottom surface of the circular depression 3244.
  • the power supply terminals 3246 and 3248 are respectively positive and negative.
  • a guiding pin 3252 is provided in the center of the bottom surface of the circular depression 3244.
  • An O-ring 3254 made of silicon rubber and a ring screw 3256 are used to attach the LED module 3200 to the lighting unit 3240.
  • the ring screw 3256 has a shape of a ring that has a substantially rectangular cross-section.
  • An external thread (not shown in Fig. 56) is created on an outer surface of the ring screw 3256, and a depression 3258 is provided.
  • the following part describes a procedure of attaching the LED module 3200 to the lighting unit 3240. To start with, the LED module 3200 is fitted in the circular depression 3244 in the following manner.
  • the ceramics substrate 3202 of the LED module 3200 is positioned between the bottom surface of the circular depression 3244 and the power supply terminals 3246 and 3248.
  • the guiding pin 3252 is fitted in the guiding hole 3216, so as to align the center of the LED module 3200 with the center of the circular depression 3244. Furthermore, the guiding protrusion 3230 is fitted in the guiding depression 3210, so as to align the positive and negative terminals 3212 and 3214 with the power supply terminals 3246 and 3248 respectively.
  • the ring screw 3256 to which the O-ring 3254 has been attached is screwed into the circular depression 3244 and fixed.
  • the positive and negative terminals 3212 and 3214 are respectively connected to the power supply terminals 3246 and 3248, so that the terminals 3212 and 3214 are electrically connected to the terminals 3246 and 3248 reliably.
  • the substantially entire lower surface of the ceramics substrate 3202 is connected to the flat bottom surface of the circular depression 3244.
  • This enables heat generated in the LED module 3200 to be effectively conducted to the lighting unit 3240, thereby improving a cooling effect of the LED module 3200.
  • silicone grease may be applied to the lower surface of the ceramics substrate 3202 and the bottom surface of the circular depression 3244 to further improve the heat conduction efficiency from the LED module 3200 to the lighting unit 3240.
  • the light emitting layer 3018 of each LED in the LED array chip 3002 emits blue light.
  • part of the blue light is converted into yellow light by the phosphor within the phosphor film 3050.
  • the blue light and the yellow light mix together, to generate white light.
  • the white light is emitted through the lenses 3204, 3206 and 3208.
  • a spot shape of the white light generated by the LED array chip 3002 is substantially circular.
  • the lighting apparatus 3242 including a plurality of LED array chips 3002 can also produce light which has a substantially circular spot shape when irradiated to a surface positioned distant enough from the lighting apparatus 3242 in relation to a diameter of each of the lenses 3204, 3206 and 3208 and an interval between any two of the lenses 3204, 3206 and 3208.
  • an SMD LED including one of the LED chips (2, 2002, 2102, 2202 and 3002) relating to the first to third embodiments.
  • An SMD LED relating to a fourth embodiment may include any one of the LED chips 2, 2002, 2102, 2202 and 3002. The following description is made taking the LED array chip 2 relating to the first embodiment as an example. Fig.
  • FIG. 58A is a plan view illustrating an SMD LED 502 relating to the fourth embodiment (hereinafter referred to as "an LED 502"), and Fig. 58B illustrates a cross-section of the LED 502 along a line ZZ shown in Fig. 58A.
  • the LED 502 includes a rectangular ceramic substrate 504, and a pair of power supply terminals 506 and 508 each of which is formed so as to partially cover both upper and lower main surfaces of the ceramic substrate 504.
  • the LED array chip 2 is mounted so as to extend over edge portions, on the upper main surface of the ceramic substrate 504, of the power supply terminals 506 and 508.
  • the LED array chip 2 is sealed using an epoxy resin 510 as a sealing member.
  • the LED array chip 2 emit white light.
  • the white light is emitted outward through the epoxy resin 510.
  • the LED 502 is surface-mounted on an electronic device in such a manner that edge portions, on the lower main surface of the ceramic substrate 504, of the power supply terminals 506 and 508 are electrically connected to a wiring pattern formed on a printed-wiring board of the electronic device.
  • the present invention includes the following modification examples. (1) According to the third embodiment, the multilayer epitaxial structure -is formed like a circular cylinder. However, the third embodiment is not limited to such.
  • the multilayer epitaxial structure may be formed like a cylinder with N-sided polygons for bases, where N is an integer equal to or larger than five. In this way, a spot shape of light emitted from the LED array chip 3002 is more like a circle than a rectangle.
  • the multilayer epitaxial structure is formed as a cylinder with regular iV-sided polygons for bases, where N is an even integer. In this way, the spot shape of light emitted from the LED array chip 3002 can be point-symmetric, such as a circle.
  • light emitted from the light emitting module 3200 or the lighting apparatus 3242 has a circular (point-symmetric) spot shape, as a circular spot shape of light emitted from each LED array chip 3002 (semiconductor light emitting device) is scarcely worsened.
  • the light emitted from the light emitting module 3200 or the lighting apparatus 3242 may be required to have a point-asymmetric spot shape, depending on use of the light emitting module 3200 or the lighting apparatus 3242.
  • the semiconductor light emitting device relating to the third embodiment can easily produce light having a desired point-asymmetric spot shape since it is comparatively easy to convert light with a point-symmetric spot shape into light with a desired point-asymmetric spot shape.
  • the lighting apparatus 3242 is, for example, used for a head lamp of a car.
  • the circular-cylinder-like multilayer epitaxial structure is divided into 36 portions, to form 36 independent LEDs (light emitting elements) .
  • the number of the independent LEDs is not limited to 36.
  • the cylinder-like multilayer epitaxial structure may not be divided. Which is to say, an LED chip that is constituted by one LED (light emitting element) may be obtained, instead of the LED array chip 3002.
  • the cylinder member 3006 is formed by removing an unnecessary area of all of the layers 13012, 13014, 13016, 13018, 13020, 13022 and 13024 making up the multilayer epitaxial structure (see step H5 in Fig. 49) . However, it may not be all of these layers which are removed.
  • the cylinder member 3006 can be formed by removing an unnecessary area of the layers from an outmost layer (the n + -GaN layer 13024) to a conductive layer between the light emitting layer 13018 and the SiC substrate 13004 (the n-GaN clad layer 13016) . As long as the unnecessary area of these layers 13024, 13022, 13020, 13018 and 13016 is removed, a side surface of the light emitting layer is exposed on a side surface of the cylinder member 3006.
  • the phosphor film 3050 can be formed, at a large thickness, not only on the upper main surface of the outmost layer 13024 but also on the side surface of the cylinder member 3006. As a consequence, unevenness of color can be reduced.
  • the SiC substrate 13004 is used as a base substrate for forming, by epitaxial growth, the multilayer epitaxial structure made up of the n-AlGaN buffer layer 13012 to the p-GaN contact layer 13022. The reason for this is explained in the following.
  • the SiC substrate 13004 has equal or higher heat conductivity compared with copper and aluminum.
  • the SiC substrate 13004 can be replaced with any of an AlN substrate, a GaN substrate, a ⁇ BN substrate and an Si substrate which similarly have high heat conductivity.
  • the SiC substrate 13004 can be replaced with a common sapphire substrate to realize the present invention, even though the sapphire substrate has slightly lower heat conductivity.
  • the LED array chip 3002 is a square approximately 2 mm on a side. However, the third embodiment is not limited to such.
  • depressions are formed by providing the n + -GaN regrowth layer 3024, in order to improve light extraction efficiency.
  • the depressions may be formed in a different manner. For example, a pattern mask is formed on the p-GaN contact layer 3022 and etching is then conducted. Alternatively, a dielectric layer made of, for example, Ta 2 0 is formed on the p-GaN contact layer 3022. After this, a pattern mask is formed on the dielectric layer and etching is then conducted.
  • the cylinder member 3006 (the multilayer epitaxial structure) is formed by epitaxial growth on the SiC substrate 3004 which is a constituent of the LED array chip 3002.
  • the third embodiment is not limited to such.
  • the cylinder member 3006 (the multilayer epitaxial structure) is first formed by epitaxial growth on a single-crystal substrate (e.g. a sapphire substrate) which is different from the SiC substrate 3004, and then transferred to the SiC substrate 3004.
  • the SiC substrate 3004 which is a base substrate constituting the LED array chip 3002 may or may not be a substrate on which the cylinder member 3006 (the multilayer epitaxial structure) is formed by epitaxial growth .
  • a semiconductor light emitting device relating to an embodiment of the present invention is applicable to a lighting apparatus. This is because a light emitting device used for a lighting apparatus needs to be tested for its optical performance, for example, unevenness of color, before being mounted on the lighting apparatus.

Abstract

An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Description

■ DESCRIPTION SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, LIGHTING APPARATUS, DISPLAY ELEMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE
Technical Field The present invention relates to a semiconductor light emitting device such as a light emitting diode chip (LED chip) , and also to a light emitting module, a lighting apparatus and a display element using the semiconductor light emitting device, and a manufacturing method of the semiconductor light emitting device. The present invention particularly relates to a semiconductor light emitting device that emits light of a desired color using a phosphor.
Background Art LEDs have a higher efficiency and a longer lifetime than incandescent lamps and halogen lamps. In the field of LEDs, vigorous researches have recently been conducted to use white LEDs for lighting, as white LEDs with higher luminance have been developed. A common white LED at present includes a combination of an LED bare chip emitting blue light and a phosphor excited by the blue light to emit yellow light, so that the blue light and the yellow light mix together to generate white light. A manufacturing method of this white LED includes a wafer fabrication process in which the LED bare chip is obtained and an assembly process in which the LED bare chip is packaged. In the wafer fabrication process, the LED bare chip is typically obtained by forming a multilayer epitaxial structure including a light emitting layer on a light-transmitting substrate, such as a sapphire substrate by epitaxial growth. In addition, an anode electrode and a cathode electrode are formed on a main surface of the multilayer epitaxial structure which faces away from the sapphire substrate. In the assembly process, the LED bare chip is mounted on a lead frame, a printed-wiring board or the like since the LED bare chip alone can not be put to use. After this, a resin mixed with a phosphor material is dropped onto the mounted LED bare chip and cured, to form a phosphor film. Subsequently, steps such as molding a periphery of the phosphor film using a resin are conducted to complete the white LED. The completed white LED is tested for its electrical and optical performance before shipped. However, there is a high possibility that the white LED manufactured in the above-descried manner has poor optical performance. The reason is explained in the following. Firstly, the phosphor film is formed in such a manner that the resin mixed with the phosphor material is dropped onto the LED bare chip and then cured. Therefore, it is highly likely that the thickness of the phosphor film in the white LED is not equal to a designed thickness. Here, a color temperature of the white light emitted by the white LED is determined by a ratio between a quantity of the blue light and a quantity of the yellow light. This being so, if the phosphor film is thick, the quantity of the blue light is small and the quantity of the yellow light is large, so that white light of a low color temperature is produced. On the other hand, if the phosphor film is thin, white light of a high color temperature is produced. Consequently, a desired color temperature can not be realized. Secondly, the phosphor film tends to be formed at an uneven thickness . If the phosphor film is formed at an inappropriately uneven thickness, unevenness of color occurs. White LEDs with the above-mentioned defects are rejected as a result of the optical performance test. This results in a low ratio of accepted finished products (white LEDs) to all finished products. In an attempt to improve the ratio of accepted finished products, it has been proposed to test white LEDs for unevenness of color prior to the assembly process. This proposal has been realized by an LED chip that is disclosed in Japanese patent No. 3399440. According to this disclosure, an LED bare chip is mounted on a substrate (an auxiliary mounting substrate) that has a slightly larger surface area than the LED bare chip, with a multilayer epitaxial structure facing downwards (i.e. a sapphire substrate of the LED bare chip faces upwards) . A phosphor film is then formed on and around the LED bare chip mounted on the auxiliary mounting substrate. Thus, this LED bare chip can be tested for its optical performance prior to an assembly process in which the LED bare chip is mounted on a lead frame or a printed-wiring board. As a consequence, the ratio of accepted finished products can be improved. However, the LED chip disclosed in the Japanese patent
No. 3399440 has an extra constituent, i.e. the auxiliary mounting substrate. Accordingly, an entire thickness (height) of the LED chip increases by a thickness of the auxiliary mounting substrate, which results in an increase in chip size. In light of the above-described problems, an object of the present invention is to provide a semiconductor light emitting device which can be tested for its optical performance before packaged without increasing a size of the semiconductor light emitting device. The object includes provision of a manufacturing method of the semiconductor light emitting device, and a light emitting module, a lighting apparatus and a display element using the semiconductor light emitting device.
Disclosure of the Invention The object can be achieved by a semiconductor light emitting device including: a base substrate; a multilayer epitaxial structure that includes a first conductive layer, a second conductive layer and a light emitting layer that is formed between the first conductive layer and the second conductive layer, where the multilayer epitaxial structure is formed on the base substrate in such a manner that the first conductive layer is positioned closer to the base substrate than the second conductive layer is; and a phosphor film that covers a main surface of the multilayer epitaxial structure which faces away from the base substrate, and every side surface of the multilayer epitaxial structure from a layer including the main surface to include at least the light emitting layer. According to this construction, the semiconductor light emitting device, which is to be mounted on a lead frame or a printed-wiring board, has the phosphor film that covers the multilayer epitaxial structure including the light emitting layer. Thus, the semiconductor light emitting device can be tested for its optical performance, such as unevenness of color, before mounted. In this way, a ratio of accepted finished products to all finished products can be improved without requiring an additional member such as an auxiliary mounting substrate as in the related art. Therefore, a size of the semiconductor light emitting device' does not increase. Here, the multilayer epitaxial structure may be epitaxially grown on the base substrate. Here, the multilayer epitaxial structure may be first epitaxially grown on a single-crystal substrate, and then transferred to the base substrate. Here, the multilayer epitaxial structure may be shaped as a cylinder having a substantially circular or N-sided polygonal cross-section, where N is an integer equal to or larger than five. According to this construction, a spot shape of light emitted from the semiconductor light emitting device is like a circle or ΛJ-sided polygon, where N is an integer equal to or larger than five. Which is to say, the spot shape is more like a circle than a rectangle. The object can be achieved by a light emitting module, a lighting apparatus and a display element using the above-described semiconductor light emitting device. For the same reasons stated above, the ratio of accepted finished products (e.g. light emitting modules) can be improved. The object can be also achieved by a manufacturing method of the semiconductor light emitting device, which achieves the above-described effects.
Brief Description Of The Drawings Fig. 1A is a perspective view illustrating an LED array chip relating to a first embodiment, and Fig. IB is a plan view illustrating the LED array chip relating to the first embodiment . Fig. 2 is a cross-sectional view illustrating a part of the LED array chip relating to the first embodiment. Fig. 3A is a plan view illustrating an LED in the LED array chip relating to the first embodiment, Fig. 3B illustrates how LEDs are connected in the LED array chip relating to the first embodiment, and Fig. 3C is a bottom plan view illustrating the LED array chip relating to the first embodiment. Fig. 4 illustrates part of a manufacturing method of the LED array chip relating to the first embodiment. Fig. 5 illustrates part of the manufacturing method of the LED array chip relating to the first embodiment. Fig. 6 illustrates part of the manufacturing method of the LED array chip relating to the first embodiment. Fig. 7 illustrates part of the manufacturing method of the LED array chip relating to the first embodiment. Fig. 8 is a perspective view illustrating an LED module relating to the first embodiment. . Fig. 9A is a plan view illustrating the LED module relating to the first embodiment, Fig. 9B illustrates a cross-section of the LED module along a line CC shown in Fig. 9A, and Fig. 9C is an enlargement view illustrating a portion E shown in Fig. 9B . Fig. 10A illustrates the LED module relating to the first embodiment after removing a lens, and Fig. 10B illustrates a pad pattern formed on a ceramics substrate constituting the LED module relating to the first embodiment. Fig. 11A is a perspective view illustrating a lighting apparatus relating to the first embodiment, and Fig. 11B is a bottom plan view illustrating the lighting apparatus. Fig.12 is a perspective exploded view illustrating the lighting apparatus relating to the first embodiment. Fig. 13 shows an emission spectrum of the lighting apparatus relating to the first embodiment. Fig. 14A is a plan view illustrating an LED chip relating to a first modification example of a second embodiment after removing a phosphor film, Fig. 14B illustrates a cross-section of the LED chip along a line FF shown in Fig. 14A, and Fig. 14C is a bottom plan view illustrating the LED chip. Fig. 15 illustrates part of a manufacturing process of the LED chip relating to the first modification example of the second embodiment. Fig. 16 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment. Fig. 17 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment. Fig. 18 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment. Fig. 19 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment. Fig. 20 illustrates part of the manufacturing process of the LED chip relating to the first modification example of the second embodiment. Fig. 21A is a plan view illustrating an LED chip relating to a second modification example of the second • embodiment after removing a phosphor film, and Fig. 2IB illustrates a cross-section of the LED chip along a line GG shown in Fig. 21A. Fig. 22 illustrates part of a manufacturing process of the LED chip relating to the second modification example of the second embodiment. Fig. 23 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment. Fig. 24 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment. Fig. 25 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment. Fig. 26 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment. Fig. 27 illustrates part of the manufacturing process of the LED chip relating to the second modification example of the second embodiment. Fig. 28A is a plan view illustrating an LED array chip relating to a third modification example of the second embodiment after removing a phosphor film, Fig. 28B illustrates a cross-section of the LED array chip along a line HH shown in Fig. 28A, and Fig. 28C illustrates how LEDs are connected in the LED array chip. Fig. 29 illustrates part of a manufacturing process of the LED array chip relating to the third modification example of the second embodiment. Fig. 30 illustrates part of the manufacturing process of the LED array chip relating to the third modification example of the second embodiment. Fig. 31 illustrates part of the manufacturing process of the LED array chip relating to the third modification example of the second embodiment. Fig. 32 illustrates part of the manufacturing process of the LED array chip relating to the third modification example of the second embodiment. Fig. 33 is a perspective view illustrating a white LED module relating to a fourth modification example of the second embodiment. Fig. 34A is a plan view illustrating the white LED module relating to the fourth modification example of the second embodiment, Fig. 34B illustrates a cross-section of the white LED module along a line KK shown in Fig. 34A, and Fig. 34C is an enlargement view illustrating a chip-mounted area shown in Fig. 34B. Fig. 35A illustrates a wiring pattern formed in the white LED module relating to the fourth modification example of the second embodiment, and Fig.35B illustrates a pad pattern formed on a ceramics substrate constituting the white LED module . Fig. 36A is a perspective view illustrating a lighting apparatus relating to the fourth modification example of the second embodiment, and Fig. 36B is a bottom plan view illustrating the lighting apparatus . Fig.37 is a perspective exploded view illustrating the lighting apparatus relating to the fourth modification example of the second embodiment. Fig. 38 shows an emission spectrum of the lighting apparatus relating to the fourth modification example of the second embodiment. Fig.39 is a perspective view illustrating an LED array chip relating to a third embodiment. Fig. 40 is a plan view illustrating the LED array chip relating to the third embodiment. Fig. 41A illustrates a cross-section of the LED array chip along a line PP shown in Fig.40, and Fig.41B illustrates a cross-section of the LED array chip along a line QQ shown in Fig. 40. Fig. 42A illustrates how LEDs are connected in the LED array chip relating to the third embodiment, and Fig. 42B is a bottom plan view illustrating the LED array chip relating to the third embodiment. Fig. 43 is used to describe a manufacturing method of the LED array chip relating to the third embodiment. Fig. 44 is used to describe the manufacturing method of the LED array chip relating to the third embodiment. Fig. 45 is used to describe the manufacturing method of the LED array chip relating to the third embodiment. Fig. 46 is used to describe the manufacturing method of the LED array chip relating to the third embodiment. Fig. 47 is used to describe the manufacturing method of the LED array chip relating to the third embodiment. Fig. 48 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment. Fig. 49 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment. Fig. 50 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment. Fig. 51 illustrates part of the manufacturing method of the LED array chip relating to the third embodiment. Fig .52 is a perspective view illustrating an LED module relating to the third embodiment. Fig. 53A is a plan view illustrating the LED module relating to the third embodiment, Fig. 53B illustrates a cross-section of the LED module along a line XX shown in Fig. 53A, and Fig. 53C is an enlargement view illustrating a portion Y shown in Fig. 53B. Fig. 54A illustrates the LED module relating to the third embodiment after removing a lens, and Fig. 54B illustrates a pad pattern formed on a ceramics substrate constituting the LED module relating to the third embodiment. Fig. 55A is a perspective view illustrating a lighting apparatus relating to the third embodiment, and Fig. 55B is a bottom plan view illustrating the lighting apparatus relating to the third embodiment. Fig.56 is a perspective exploded view illustrating the lighting apparatus relating to the third embodiment. Fig.- 57 shows an emission spectrum of the lighting apparatus relating to the third embodiment. Fig. 58A is a plan view illustrating a surface mounting device (SMD) LED relating to a fourth embodiment, and Fig. 58B illustrates a cross-section of the SMD LED along a line ZZ shown in Fig. 58A.
Best Mode for Carrying Out the Invention The following describes embodiments of the present invention with reference to the attached figures. (FIRST EMBODIMENT) Fig. 1A is an external perspective view illustrating a construction of an LED array chip 2, which is one type of a semiconductor light emitting device, and Fig. IB is a plan view illustrating the LED array chip 2. Fig. 1A mainly illustrates how LEDs 6 (mentioned later) are arranged in the LED array chip 2, and therefore does not show minute depressions and protrusions on surfaces of the LEDs 6. Fig. IB illustrates the LED array chip after removing a phosphor film 48 (mentioned later) . As shown in Figs. 1A and IB, the LED array chip 2 is formed in such a manner that the LEDs 6 are arranged in a matrix of N rows and M columns (in the first embodiment, a matrix of seven rows and five columns, in total, 35 LEDs 6) on a non-doped (highly resistive) SiC substrate 4 which is a semiconductor substrate (hereinafter simply referred to as "an SiC substrate 4") . The LEDs 6 are light emitting elements each of which is formed by a multilayer epitaxial structure including a light emitting layer. The 35 LEDs 6 are formed by epitaxial growth on a main' surface of the SiC substrate 4 with a space having a width (W4) of 50 μm being left. The space is an area of the main surface of the SiC substrate 4 in which a multilayer epitaxial structure (the 35 LEDs 6) is not formed. In other words, the space is formed so as to surround the multilayer epitaxial structure. The space is hereinafter referred to as an exposed portion 7. A size Ll x Wl of each LED 6 is 285 μm 400 μm. A size L2 W2 of an area in which the LEDs 6 are formed is 2 mm 2 mm. A size L3 x W3 of the LED array chip 2 is 2.1 mm x 2.1 mm. The following part describes, in more detail, the construction of the LED array chip 2 with reference to cross-sectional views. Fig. 2A illustrates a cross-section of the LED array chip 2 along a line AA shown in Fig. IB, and Fig, 2B illustrates a cross-section of the LED array chip 2 along a line BB shown in Fig. IB. Specifically speaking, Fig. 2A illustrates a cross-section of an LED βa of the first row and the first column and an LED 6b of the first row and the second column, and Fig.2B illustrates a cross-section of an LED 6c of the seventh row and the fourth column and an LED 6d of the seventh row and the fifth column. Each LED 6 is formed by a multilayer epitaxial structure made up of an n-AlGaN buffer layer 8 (having a thickness of 30 nm) , a distributed bragg reflector (DBR) layer 10 composed of 30 periods of n-AlGaN/GaN (having a total thickness of 3 μm) , an n-GaN clad layer 12 (having an Si-doping amount of 3χl018 cm-3 and a thickness of 200 nm) , an InGaN/GaN multiple quantum well (MQW) light emitting layer 14 composed of six periods of InGaN (having a thickness of 2 nm) /GaN (having a thickness of 8 nm) , a p-GaN clad layer 16 (having an Mg-doping amount of lxlO19 cm-3 and a thickness of 200 nm) , and a p-GaN contact layer 18 (having an Mg-doping amount of 3χl019 cm-3 and a thickness of 200 nm) . These layers 8, 10, 12, 14, 16 and 18 are formed on the SiC substrate 4 in the stated order. Which is to say, the LED 6 basically has a construction in which a light emitting layer (the MQW light emitting layer 14) is sandwiched between a conductive layer (the n-GaN clad layer 12 on a side of the SiC substrate 4) and a conductive layer (the p-GaN contact layer 18 and the p-GaN clad layer 16 on a side of a light extraction surface) . An Ni/Au thin film 20 and an ITO transparent electrode 22 are formed on the p-GaN contact layer 18 in this order. A Ti/Au electrode 24, which is an n-electrode, is formed on the n-GaN clad layer 12. When power is supplied to this LED 6 through the ITO transparent electrode 22 and the Ti/Au electrode 24, the light emitting layer 14 emits blue light having a wavelength of 460 nm. The Ni/Au thin film 20 and the ITO transparent electrode 22 are used as a p-electrode in the first embodiment to improve transmission of the light emitted from the light emitting layer 14. Amain surface of the p-electrode of the LED 6 from which light is extracted is made regularly uneven in order to improve light extraction efficiency. To be more specific, as shown in Fig. 3A, which is a plan view illustrating the LED 6, circular depressions 25 are formed at a predetermined interval (d) of 1 μm in the first embodiment. Here, a planar shape of each depression 25 is not limited to a circle as described above, but may be a quadrangle or a hexagon. Furthermore, the uneven surface may be achieved by creating linear grooves at a predetermined interval, or simply by irregularly damaging the surface of the p-electrode. The 35 LEDs 6 described above are connected in series on the SiC substrate 4. Figs. 2A and 2B are used to explain how the LEDs 6 are connected in the LED array chip 2. As shown in Fig. 2A, the adjacent LEDs 6a and 6b are divided from each other by a division groove 26 that is deep enough to reach the SiC substrate 4. The same holds true for all pairs of adjacent LEDs 6 including the LEDs 6c and 6d shown in Fig. 2B.!ι An insulating film (Si3N4 film) 28 is formed so as to cover side surfaces of each of the LEDs 6a, βb, 6c and 6d and the division grooves 26. A bridging wire 30 is formed on the insulating film 28 to connect a p-electrode of the LED 6a (an Ni/Au thin film 20 and an ITO transparent electrode 22) to an n-electrode of the LED 6b (a Ti/Au electrode 24) . Similarly, another bridging wire 30 formed on the insulating film 28 connects a p-electrode of the LED 6c and an n-electrode of the LED 6d as shown in Fig.2B. In the same manner, bridging wires 30 connect LEDs 6 from an LED 6e of the first row and the third column to an LED 6f of the seventh row and the third column. As a result, all of the LEDs 6 are connected in series as shown in Fig. 3B . Among the 35 LEDs 6 connected in series in the LED array chip 2, the LED 6a is an LED on a lower potential end of the LED array chip 2. Therefore, a Ti/Au electrode 24 of the LED 6a is a cathode electrode 32 of the LED array chip 2. The LED 6d is an LED on a higher potential end. Therefore, an Ni/Au thin film 20 and an ITO transparent electrode 22 of the LED 6d are an anode electrode 34 of the LED array chip 2. Fig.3C illustrates a back surface of the LED array chip 2. As shown in Fig. 3C, two power supply terminals 36 and 38 are formed on the back surface, which is opposite to a front surface of the SiC substrate 4 on which the LEDs 6 are formed. The power supply terminals 36 and 38 are each formed by a Ti/Pt/Au film. As shown in Figs. 2A and 2B, the cathode electrode 32 is connected to the power supply terminal 36 by a bridging wire 40 and a through hole 42 provided in the SiC substrate' 4, and the anode electrode 34 is connected to the power supply terminal 38 by a bridging wire 44 and a through hole 46 provided in the SiC substrate 4. The through holes 42 and 46 are each formed by filling an opening with a diameter of 30 μm provided in the SiC substrate 4 with Pt . When an electric current of 50 mA is supplied to the 35 LEDs 6 connected in series through the power supply terminals 36 and 38 with heat dissipation being ensured, an operation voltage of 120V is observed. The phosphor film 48 is formed on the front surface of the SiC substrate 4 so as to cover the LEDs 6 and the entire exposed portion 7 the SiC substrate 4. The phosphor film 48 is made of a light-transmitting resin, for example, silicone in which particles of a yellow phosphor (Sr, Ba) 2Si04:Eu2+ and fine particles of Si02 are dispersed. The phosphor film 48 has a thickness T (shown in Fig. 2A) of 50 μm. The light-transmitting resin may be an epoxy resin or a polyimide resin, instead of silicone. The phosphor in the phosphor film 48 converts part of the blue light emitted from the light emitting layer 14 of each LED 6 into yellow light. Here, the blue light from each LED 6 and the yellow light from the phosphor mix together, to generate white light. Since the DBR layer 10, which is a light reflective layer, is formed between the light emitting layer 14 and the SiC substrate 4, 99% or more of blue light emitted from the light emitting layer 14 towards the SiC substrate 4 is reflected towards the- light extraction surface. This improves light extraction efficiency of each LED 6. It should be noted that blue light indicates light having a wavelength from 400 nm inclusive to 500 nm exclusive, and yellow light indicates light having a wavelength from 550 nm inclusive to 600 nm exclusive, in this description. Taking this into consideration, the LEDs 6 may be configured to emit light having a peak emission wavelength that falls within the above-mentioned range, instead of a peak emission wavelength of 460 nm as described above. The following part describes a manufacturing method of the LED array chip 2 described above, with reference to Figs. 4, 5 and 6. In Figs.4, 5 and 6, a material to form each constituent of the LED array chip 2 is identified by a three-digit number whose first digit is one. The last two digits of the three-digit number represents a reference numeral identifying the corresponding constituent of the LED array chip 2. Firstly, as shown in Fig. 4, an n-AlGaN buffer layer 108, a DBR layer 110 composed of 30 periods of n-AlGaN/GaN, an n-GaN clad layer 112, an InGaN/GaN MQW light emitting layer 114, a p-GaN clad layer 116 and a p-GaN contact layer 118 are formed on a non-doped SiC substrate 104 in the stated order using a metal organic chemical vapor deposition (MOCVD) method (step Al) . Here, the non-doped SiC substrate 104 has a diameter of two inches and a thickness of 300 μm. After this, a mask 50 is formed, so as to mask an area, on the lamination made up of the layers 118, 116, 114, 112, 110 and 108, that is slightly larger than an area in which the Ni/Au thin film 20 (and the ITO transparent electrode 22) of each LED 6 is to be formed. An unmasked area of the lamination is removed by etching to a depth of approximately half of the thickness of the n-GaN clad layer 112 is removed (step Bl) . Thus, a surface to connect the Ti/Au electrode 24 (an n-electrode formation surface) 52 is formed. The mask 50 is removed prior to the next step. After this, a mask 54 is formed so as to cover the resulting surface after the step Bl except for areas in which the exposed portion 7 and the division groove 26 are to be formed. Unmasked areas of a lamination made up of the remaining layer 112 and the layers 110 and 108 are removed by etching to such a depth that the SiC substrate 104 is exposed, to create the exposed portion 7 and the division groove 26 (step Cl). Which is to say, the exposed portion 7 is created by removing a corresponding part of the multilayer epitaxial structure composed of the layers 108 to 118 (the corresponding part of the multilayer epitaxial structure which has been removed is hereinafter referred to as a removed multilayer portion.) . After the etching is performed, the mask 54 is removed prior to the next step. An Si3N4 film 128, which is an insulating film, is formed by sputtering or the like for insulation and surface protection (step Dl) . A mask 56 is then formed so as to mask the Si3N4 film 128 except for an area in which the Ni/Au thin film 20 (and the ITO transparent electrode 22) of each LED 6 is to be formed. An unmasked area of the Si3N4 film 128 is removed by etching, and an Ni/Au thin film 120 is then formed by deposition. Thus, the Ni/Au thin film 20 is formed (step El) . A portion of the Ni/Au thin film 120 which is formed on the mask 56 (no shown in Fig. 5) is removed together with the mask 56 prior to the next step. The same procedure as in the step El is conducted to form the Ti/Au electrode 24. Specifically speaking, a mask 58 is formed so as to mask the resulting surface after the step El, except for an area on the Si3N4 film 128 in which the Ti/Au electrode 24 for each LED 6 is to be formed. After an unmasked area of the Si3N4 film 68 is removed by etching, a Ti/Au film 124, which is a thin metal film, is applied by deposition. Thus, the Ti/Au electrode 24 is formed (step Fl) . A portion of the Ti/Au film 124 which is formed on the mask 58 (not shown in Fig. 5) is removed together with the mask 58 prior to the next step. After this, a mask 60 is formed so as to cover the resulting surface after the step Fl except for an area in which the through holes 42 and 46 are to be formed. An unmasked area of the resulting surface is removed by etching, to form an opening 61 having a depth of 200 μm. Then, the opening 61 is filled with Pt by electroless deposition or the like (step GI) . The mask 60 is removed prior to the next step. Subsequently, a mask 62 is formed to mask the resulting surface after the step Gl except for areas in which the depressions 25 are to be formed. Unmasked areas of the resulting surface are removed by etching to such a depth that the p-GaN contact layer 118 is exposed, to form the depressions 25 (step HI) . The mask 62 is removed prior to the next step. After this, a mask 64 is formed so as to mask the resulting surface after the step Hi except for an area in which the ITO transparent electrode 22 of each LED 6 is to be formed. Then, an ITO film 122 is applied by sputtering, to form the ITO transparent electrode 22 for each LED 6 (step II) . A portion of the ITO film 122 which is formed on the mask 64 (not shown in Fig. 6) is removed together with the mask 64 prior to the next step. In the next step, the bridging wires 30, 40 and 44 are formed in the following manner. A mask 66 is formed so as to mask the resulting surface after the step II, except for areas in which the bridging wires 30, 40 and 44 are to be formed. Then, a Ti/Pt/Au film, which is a thin metal film, is applied by deposition, to form the bridging wires 30, 40 and 44 (step Jl) . A portion of the Ti/Pt/Au film which is formed on the mask 66 (not shown in Fig.7) is removed together with the mask 66 prior to the next step. After this, a back surface of the SiC substrate 104 is polished so that the thickness of the SiC substrate 104 becomes 150 μm. Thus, the through holes 42 and 46 are exposed on the back surface of the SiC substrate 104 (step KI) . Subsequently, a mask (not shown in Fig. 7) is formed so as to mask the back surface of the SiC substrate 104 except for areas in which the power supply terminals 36 and 38 are to be formed. After this, a Ti/Pt/Au film, which is a thin metal film, is applied by deposition. Thus, the Ti/Pt/Au power supply terminals 36 and 38 are formed (step Ll) . A portion of the Ti/Pt/Au film which is formed on the mask (not shown in Fig. 7) is removed together with the mask prior to the next step. After this, silicone in which particles of a yellow phosphor (Sr, Ba) 2Sio4 : Eu2+ and fine particles of Si02 are dispersed is applied by printing so as to cover the exposed portion 7 and the LEDs 6. The silicone is heated to be cured, to form the phosphor film 48. Subsequently, the phosphor film 48 is polished so that the thickness of the phosphor film 48 becomes 50 μm (step Ml) . Here, it should be noted that color of white light emitted from the LED array chip 2 is determined by a ratio between blue light emitted from the LEDs 6 and yellow light generated by converting the blue light. This ratio can be adjusted by changing the percentage of the phosphor particles included in the silicone resin and the thickness of the phosphor film 48. Specifically speaking, when the percentage of the phosphor particles. is higher, or the thickness of the phosphor film 48 is larger, the ratio of the yellow light becomes higher. Here, a high ratio of the yellow light means that the white light has a low color temperature. According to the first embodiment, the silicone resin including the phosphor particles is first applied at a thickness larger than a designed thickness of the phosphor film 48. The applied resin is then polished after heated to be cured, to achieve the designed thickness. In this way, the phosphor film 48 can be formed at an even thickness. This reduces unevenness of color with it being possible to produce white light having a predetermined color temperature reliably. Lastly, the SiC substrate 104 is divided into individual LED array chips 2 by dicing, to obtain the LED array chip 2 (shown in Figs. 1A and IB) . Here, the phosphor film 48 may be formed by applying a resin including a phosphor after a mesa etching step but before a dicing step in a conventional wafer fabrication process. However, a groove created by conventional mesa etching has such a width that only one or two phosphor particles can be arranged in a widthwise direction. In this case, blue light emitted from side surfaces of the light emitting layer 14 of each LED 6, to a large extent, goes through the phosphor layer 48 without exciting the phosphor. As a result, the blue light emitted from the side surfaces becomes noticeable, which causes unevenness of color. According to the first embodiment, however, the resin including the phosphor is applied on side surfaces of the multilayer epitaxial structure (the side surfaces of the light emitting layer 14) at a thickness having an equal length to the width (W4) of the exposed portion 7. Here, the width (W4) of the exposed portion 7 is sufficiently larger than a diameter of the phosphor particle. As a consequence, the blue light emitted from the side surfaces of the light emitting layer 14 can appropriately excites the phosphor to be converted into yellow light. This reduces unevenness of color. It is generally accepted that unevenness of color occurs only in a white LED that uses visible light having a spectral component of a wavelength within a range of 380 nm and 780 nm (purple to red) for an excitation light source. In other words, unevenness of color does not occur in a white LED having near-ultraviolet light as an excitation light source. However, ultraviolet light with a peak emission wavelength of 370 nm also has a spectral component of a wavelength no less than 380 nm (visible light) . Therefore, a white LED using near-ultraviolet light as an excitation light source can have a problem of unevenness of color, depending on a ratio of spectral components of a wavelength no less than 380 nm. Accordingly, the first embodiment is applicable to an LED having a light emitting layer that emits near-ultraviolet light to achieve the same effects of reducing unevenness of color for the same reasons stated ■ above. Which is to say, the first embodiment of the present invention is applicable to an LED including a light emitting layer that emits light including a spectral component of a wavelength, at least, within a range of 380 nm and 780 nm to reduce unevenness of color. The application of the. first embodiment is not limited to an LED including a light emitting layer that emits blue light having a peak emission wavelength of 460 nm as described above. Fig. 8 is an external perspective view illustrating a white LED module 200 including LED array chips 2 described above (hereinafter simply referred to as "an LED module 200") . The LED module 200 is attached to a lighting unit 240 (mentioned later) . The LED module 200 includes a ceramics substrate 202 that is in a shape of a circle having a diameter of 5 cm and is made of aluminum nitride (A1N) and three lenses 204, 206 and 208 made of glass . A guiding depression 210 used to attach the LED module 200 to the lighting unit 240 and terminals 212 and 214 to receive a power supply from the lighting unit 240 are provided in the ceramics substrate 202. Fig. 9A is a plan view illustrating the LED module 200, Fig. 9B illustrates a cross-section of the LED module 200 along a line CC shown in Fig.9A, and Fig.9C is an enlargement view illustrating a portion E shown in Fig. 9B. As shown in Figs. 9A and 9B, a guiding hole (a through hole) 216 is provided in the center of the ceramics substrate 202 to attach the LED module 200 to the lighting unit 240. As shown in Fig. 9C, a gold plating 217 is applied to a lower surface of the ceramics substrate 202 for improving heat dissipation. The LED array chip 2 is mounted at a location, on an upper surface of the ceramics substrate 202, corresponding to a center of each of the lenses 204, 206 and 208 having a shape of a circle as shown in Fig. 9A. In total, three LED array chips 2 are mounted on the ceramics substrate 202. The ceramics substrate 202 is made up of two ceramics substrates 201 and 203 each of which has a thickness of 0.5 mm and is mainly made of A1N. The ceramics substrates 201 and 203 may be made of A1203, BN, MgO, ZnO, Si'C and diamond, instead of A1N. The LED array chips 2 are mounted on an upper surface of the lower ceramics substrate 201. Taper through holes 215 are provided in the upper ceramics substrate 203, so as to create spaces for mounting the LED array chips 2. A cathode pad 218 and an anode pad 220 (shown in Fig. 10B) are provided at the location, on the upper surface of the ceramics substrate 201, where each LED array chip 2 is to be mounted. Each of the cathode pad 218 and the anode pad 220 is made up of nickel (Ni) plating and then gold (Au) plating applied on copper (Cu) . The LED array chip 2 is mounted on the ceramics substrate 201 in such a manner that the SiC substrate 4 is adhered to the ceramics substrate 201. Here, the power supply terminals 36 and 38 are respectively connected to the cathode pad 218 and the anode pad 220 using solder. Instead of solder, a gold bump or a silver paste may be used. Before being mounted on the ceramics substrate 201, the LED array chips 2 have been tested for their optical performance, such as unevenness of color, and have passed the test. The LED array chips 2 can be tested for their optical performance before being mounted because the LED array chip 2 relating to the first embodiment includes the phosphor film 48, and can emit white light by itself. Thus, it can be prevented that the LED module 300 including the LED array chips 2 is rejected due to poor optical performance of the LED array chips 2. Consequently, a ratio of accepted finished products (LED modules 300) to all finished products is improved. An aluminum reflection film 219 is formed on a wall of each through hole 215 provided in the upper ceramics substrate 203 and on an upper surface of the ceramics substrate 203. The lenses 204, 206 and 208 are adhered to the ceramics substrate 203 using an adhesive agent 221. The adhesive agent 221 may be a silicone resin, an epoxy resin or the like. The three LED array chips 2 are connected in parallel by a wiring pattern formed on the upper surface of the ceramics substrate 201. Fig. 10A is a plan view illustrating the LED module 200 after removing the lenses 204, 206 and 208. In Fig. 10A, the three LED array chips 2 are distinguished from each other by addition of marks of A, B and C. As described above, the anode pad 220 and the cathode pad 218 (Fig. 10B) are provided at the location, on the upper surface of the ceramics substrate 201, where each of the LED array chips 2A, 2B and 2C is mounted. The anode pads 220 that are respectively connected to the LED array chips 2A, 2B and 2C are electrically connected to each other by a wiring pattern 236. The wiring pattern 236 is connected to the positive terminal 212 at its end by a through hole 237. The cathode pads 218 that are respectively connected to the LED array chips 2A, 2B and 2C are electrically connected to each other by a wiring pattern 238. The wiring pattern 238 is connected to the negative terminal 214 at its end by a through hole 239. In other words, the LED array chips 2A, 2B and 2C are connected in parallel by the wiring patterns 236 and 238. The LED module 200 described above is attached to the lighting unit 240. The LED module 200 and the lighting unit 240 constitute a lighting apparatus 242. Fig. 11A is a schematic perspective view illustrating the lighting apparatus 242, and Fig. 11B is a bottom plan view illustrating the lighting apparatus 242. The lighting unit 240 is, for example, fixed on a ceiling of a room. The lighting unit 240 includes a power supply circuit (not shown in Figs ..11A and 11B) that converts alternating-current power (e.g. 100 V, 50/60Hz) supplied from a commercial power source into direct-current power required for driving the LED module 200. The following part describes a construction to attach the LED module 200 to the lighting unit 240, with reference to Fig. 12. The lighting unit 240 has a circular depression 244 in which the LED module 200 is to be fitted. A bottom surface of the circular depression 244 is flat. An internal thread (not shown in Fig. 12) is created, in the vicinity of an open end of the circular depression 244, on an inside wall of the circular depression 244. Flexible power supply terminals 246 and 248 and a guiding protrusion 230 protrude from the inside wall of the circular depression 244, between the internal thread and the bottom surface of the circular depression 244. The power supply terminals 246 and 248 are respectively positive and negative. A guiding pin 252 is provided in the center of the bottom surface of the circular depression 244. An O-ring 254 made of silicon rubber and a ring screw 256 are used to attach the LED module 200 to the lighting unit 240. The ring screw 256 has a shape of a ring that has a substantially rectangular cross-section. An external thread (not shown in Fig. 12) is created on an outer surface of the ring screw 256, and a depression 258 is provided. The following part describes a procedure of attaching the LED module 200 to the lighting unit 240. To start with, the LED module 200 is fitted in the circular depression 244 in the following manner . The ceramics substrate 202 of the LED module 200 is positioned between the bottom surface of the circular depression 244 and the power supply terminals 246 and 248. The guiding pin 252 is fitted in the guiding hole 216, so as to align the center of the LED module 200 with the center of the circular depression 244. Furthermore, the guiding protrusion 230 is fitted in the guiding depression 210, so as to align the positive and negative terminals 212 and 214 with the power supply terminals 246 and 248 respectively. After the LED module 200 is fitted in the circular depression 244, the ring screw 256 to which the O-ring 254 has been attached is screwed into the circular depression 244 and fixed. Thus, the positive and negative terminals 212 and 214 are respectively connected to the power supply terminals 246 and 248, so that the terminals 212 and 214 are electrically connected to the terminals 246 and 248 reliably. In addition, the substantially entire lower surface of the ceramics substrate 202 is connected to the flat bottom surface of the circular depression 244. This enables heat generated in the LED module 200 to be effectively conducted to the lighting unit 240, thereby improving a cooling effect of the LED module 200. Here, silicone grease may be applied to the lower surface of the ceramics substrate 202 and the bottom surface of the circular depression 244 to further improve the heat conduction efficiency from the LED module 200 to the lighting unit 240. When power is supplied to this lighting apparatus 242 from a commercial power source, the LEDs 6 emit blue light in each LED array chip 2. Here, part of the blue light is converted into yellow light by the phosphor within the phosphor film 48. The blue light and the yellow light mix together, to generate white light. The white light is emitted through the lenses 204, 206 and 208. When an electric current of 150 mA is applied to the LED module 200, a total luminous flux of 800 lm, an on-axis luminous intensity o'f 1500 cd, and an emission spectrum shown in Fig. 13 are observed. It should be noted that the first embodiment includes the following modification examples. (1) According to the first embodiment, the removed multilayer portion includes all of the layers from 108 to 118 composing the multilayer epitaxial structure (see step Cl in Fig. 4) . However, the first embodiment is not limited to such. It is acceptable as long as the removed multilayer portion includes the layers from an outmost layer (the n-GaN contact layer 118) to a conductive layer between the light emitting layer 114 and the SiC substrate 104 (the n-GaN clad layer 112) . As long as this condition is satisfied, the phosphor film 48 can be formed at a large thickness not only on the upper surface of the multilayer epitaxial structure made up of the layers 108 to 118 but also on the side surfaces of the multilayer epitaxial structure which is created by the removed multilayer portion. As a result, unevenness of color can be reduced as described above. (2) According to the first embodiment, the SiC substrate 104 is used as a base substrate on which the multilayer epitaxial structure made up of the layers from the n-AlGaN buffer layer 108 to the p-GaN contact layer 118 are formed by epitaxial growth. This is because the SiC substrate 104 has a higher heat conductivity than copper and aluminum, and can efficiently conduct heat generated by the light emitting layer 14 to the ceramics substrate 202 which is a printed-wiring board and on which the LED array chips 2 are mounted. The SiC substrate 104 may be replaced with one of an AlN substrate, a GaN substrate, a BN substrate and an Si substrate as they similarly have a high heat conductivity . Alternatively, the first embodiment may be realized by employing a generally used sapphire substrate, which has a slightly lower heat conductivity. (3) According to the first embodiment, the LED array chip 2 includes the 35 LEDs 6 (light emitting elements) , and is a square approximately 2 mm on its side. However, the first embodiment is not limited to such. The LED array chip 2 may include any number of LEDs (light emitting elements) . Alternatively, the first embodiment may be realized by an LED chip constituted by one LED (light emitting element) , instead of the LED array chip 2. If such is the case, the exposed portion 7 is formed so as to surround each LED in the step Cl of the manufacturing method. (FIRST MODIFICATION EXAMPLE OF SECOND EMBODIMENT) Fig. 14A is a plan view illustrating a white LED chip 2002 which is one type of a semiconductor light emitting device (hereinafter simply referred to as "an LED chip 2002") , Fig. 14B illustrates a cross-section of the LED chip 2002 along a line FF shown in Fig. 14A, and Fig. 14C is a bottom plan view illustrating the LED chip 2002. Here, Fig. 14A illustrates the LED chip 2002 after removing a phosphor film 2008 (shown in Fig. 14B and mentioned later) . It should be noted that a reduced scale for each constituent is not uniform in any of the drawings including Figs. 14A, 14B and 14C. As shown in Fig. 14B, the LED chip 2002 is formed in such a manner that a multilayer epitaxial structure 2006 and the phosphor film 2008 are formed on a high-resistive Si substrate 2004 which is a base substrate (hereinafter referred to as "an Si substrate 2004") . A main surface of the Si substrate 2004 is slightly larger than a main surface of the multilayer epitaxial structure 2006. The multilayer epitaxial structure 2006 is formed on one of the main surfaces of the Si substrate 2004 with a space being retained along a periphery of the substrate 2004. The multilayer epitaxial structure 2006 is made up of a p-AlGaN layer 2010 which is a conductive layer (having a thickness of 200 nm) , a InGaN/AlGaN MQW light emitting layer 2012 (having a thickness of 40 nm) , and an n-AlGaN layer 2014 which is a conductive layer (having a thickness of 2 μm) . The layer 2010 is the closest to the Si Substrate 2004, and then the layers 2012 and 2014 are formed in the stated order. The multilayer epitaxial structure 2006 has a diode structure. The LED chip 2002 is a 500-μm-square and has a thickness of 300 μm (the Si substrate 2004 has a thickness of 100 μm, and the phosphor film 2008 has a thickness of 200 μm with respect to an upper main surface of the Si substrate 2004) . The multilayer epitaxial structure 2006 has the above-mentioned thickness and is a 420-μm-square . A high-reflective Rh/Pt/Au electrode 2016 is formed on the entire lower main surface of the p-AlGaN layer 2010, which is opposite to a main surface on which the light emitting layer 2012 is formed. It should be noted that the multilayer epitaxial structure 2006 and the high-reflective electrode 2016 are first formed on a different sapphire substrate 2042 (shown in Fig. 15 and mentioned later) using a wafer fabrication process, and then transferred to the Si substrate 2004. A conductive film 2018 which is made of a conductive material is formed, at least, in an area corresponding to the high-reflective electrode 2016 on an upper main surface of the Si substrate 2004. The conductive film 2018 is made of Ti/Pt/Au, and connected to the high-reflective electrode 2016 by a connection layer 2020 which is made of a conductive material such as Au/Sn. A light extraction surface of the multilayer epitaxial structure 2006 is an upper main surface of the n-AlGaN layer 2014, which is opposite to a main surface to which the light emitting layer 2012 is connected. Here, depressions 2022 are formed on the upper main surface of the layer 2014 to improve light extraction efficiency. The depressions 2022 are formed in such a manner that a tantalum oxide (Ta205) film 2024 formed at an even thickness on the upper main surface of the n-AlGaN layer 2014 is partially removed by etching. A Ti/Pt/Au electrode 2026 which is L-shaped is formed in an area on the upper main surface of the n-AlGaN layer 2014. An insulating film 2028 made of silicon nitride is formed on the entire surface of each side surface of the multilayer epitaxial structure 2006 and in an area of the upper main surface of the multilayer epitaxial structure 2006 (so as to frame the upper main surface of the multilayer epitaxial structure 2006) . An anode power supply terminal 2030 and a cathode power supply terminal 2032 which are made of Ti/Au are formed on a lower main surface of the Si substrate 2004 which is opposite to a main surface on which the multilayer epitaxial structure 2006 is formed. The conductive film 2018 has a portion which is not covered by the multilayer epitaxial structure 2006
(hereinafter referred to as an extended portion 2018A) . The extended portion 2018A is used to electrically connect the conductive film 2018 to the anode power supply terminal 2030 by a through hole 2034 provided in the Si substrate 2004. A wiring 2036 is connected at its one end to a corner portion 2026A of the L-shaped electrode 2026, and extends, from the corner portion 2025A, to a periphery of the upper main surface of the n-AlGaN layer 2014 (the light extraction surface of the multilayer epitaxial structure 2006) and then runs along a side surface of the multilayer epitaxial structure 2006, to reach the Si substrate 2004. The wiring 2036 is made up of a Ti/Pt/Au film, and electrically insulated from the multilayer epitaxial structure 2006 by means of the insulating film 2028. The wiring 2036 is electrically connected at the other end to the cathode power supply terminal 2032 by a through hole 2038 provided in the Si substrate 2004. Here, the through holes 2034 and 2038 are each formed by filling a through hole running in a thickness direction of the Si substrate 2004 with Pt. The phosphor film 2008 covers the side surfaces and the light extraction surface of the multilayer epitaxial structure 2006 formed on the Si substrate 2004. The light extraction surface is the upper main surface of the multilayer epitaxial structure 2006 which is opposite to a main surface to which the Si substrate 2004 is connected. The phosphor film 2008 is .made of a light-transmitting resin such as silicone in which particles of phosphors of four different colors and fine particles of metal oxide such as Si02 are dispersed. Such phosphors include a blue phosphor which contains at least one of (Ba, Sr) MgAlι0Oι7:Eu2+, (Ba, Sr, Ca, Mg) io (P0 ) 6Cl2:Eu2+ and the like, a green phosphor which contains at least one of BaMgAl10Oι7:Eu2+Mn2+, (Ba, Sr) 2Si04 :Eu2+ and the like, a yellow phosphor which contains, for example, (Sr, Ba) 2Si0 :Eu2+, and a red phosphor which contains at least one of La202S:Eu3+, CaS:Eu2+, Sr2Si5N8 :Eu2+ and the like . Instead of silicone, an epoxy resin or a polyimide resin may be used as the light-transmitting resin. The phosphor film 2008 is formed on and around the multilayer epitaxial structure 2006 at a substantially even thickness. An Al light reflective film 2040 is formed between the phosphor film 2008 and an area, on the Si substrate 2004, in which the multilayer epitaxial structure 2006 is not formed. When power is supplied to the LED chip 2002 described above through the anode and cathode power supply terminals 2030 and 2032, the light emitting layer 2012 of the multilayer epitaxial structure 2006 emits near-ultraviolet light having a wavelength of 390 nm. The near-ultraviolet light from the light emitting layer 2012 is, to a large extend, emitted from the n-AlGaN layer 2014 and absorbed in the phosphor film 2008. The phosphor film 2008 converts the near-ultraviolet light into white light. As mentioned earlier, while the multilayer epitaxial structure 2006 only has a thickness of less than 3 μm, the phosphor film 2008 has a comparatively large thickness of 200 μm. In addition, the phosphor film 2008 is also formed on the side surfaces of the multilayer epitaxial structure 2006. Here, the phosphor film 2008 is formed on and around the multilayer epitaxial structure 2006 at a substantially even thickness. Accordingly, the LED chip 2002 can produce white light with little unevenness of color, which is caused by variance in thickness of the phosphor film 2008. According to a first modification example of a second embodiment, the high-reflective electrode 2016 is formed as a p-electrode in the LED chip 2002. This significantly improves light extraction efficiency of the multilayer epitaxial structure 2006. The light extraction efficiency of the multilayer epitaxial structure 2006 can be also improved by the depressions 2022 formed in the tantalum oxide film 2024 on the upper main surface of the n-AlGaN layer 2014, which is the light extraction surface. Furthermore, the light reflective film 2040 improves the light extraction efficiency of the LED chip 2002. Furthermore, a sapphire substrate or the like is not provided on the light extraction side of the multilayer epitaxial structure 2006 in the LED chip 2002. Accordingly, the LED chip 2002 has much higher light extraction efficiency than an LED chip in which light emitted from a light emitting layer is emitted outside through a sapphire substrate or the like. According to the first modification example of the second embodiment, the p-electrode (the high-reflective electrode 2016) is formed on the substantially entire surface of a p-type layer (the p-AlGaN layer 2010) which is difficult to be configured to have a low resistance. This enables an electric current to be evenly injected to the entire multilayer semiconductor layer 2006, thereby making it possible that the entire light emitting layer 2012 evenly emit light and that a lower operation voltage is achieved. To mount the LED chip 2002, the power supply terminals 2030 and 2032 are directly connected to pads formed on a mounting substrate as described later. Here, having the phosphor film 2008, the LED chip 2002 can emit white light by itself. This makes it possible to test the LED chip 2002 for its optical performance as described above before the LED chip 2002 is mounted. As a result, it can be prevented that a finished product including the mounting board on which the LED chip 2002 has been mounted is rejected due to the optical performance of the LED chip 2002. In this way, the ratio of accepted finished products can be improved. In addition, the LED chip 2002 relating to the first modification example of_the second embodiment can be made smaller, when compared with the above-mentioned conventional LED chip which requires an auxiliary mounting substrate in addition to a base substrate that directly supports a multilayer epitaxial structure. Furthermore, the anode and cathode power supply terminals 2030 and 2032 are positioned below the multilayer epitaxial structure 2006 in the LED chip 2002. Therefore, when the LED chip 2002 is mounted, no components that block light, such as a bonding wire, exist on or above the light extraction surface of the multilayer epitaxial structure 2006. Therefore, light emitted from the LED chip 2002 does not contain shadow. The following part explains a manufacturing method for the LED chip 2002 described above with reference to Figs. 15 to 20. In Figs.15 to 20, a material to form each constituent of the LED chip 2002 is identified by a five-digit number whose first digit is one. The last four digits of the five-digit number represents a reference numeral identifying the corresponding constituent of the LED chip 2002. Firstly, as shown in Fig. 15, an n-AlGaN layer 12014, an InGaN/AlGaN MQW light emitting layer 12012, and a p-AlGaN layer 12010 are formed by epitaxial growth on the sapphire substrate 2042, which is a single-crystal substrate, in the stated order using a MOCVD method (step A2 ) . Here, the sapphire substrate 2042 has a diameter of two inches and a thickness of 300 μm. After this, a mask is formed on a multilayer epitaxial structure 12006 composed of the layers 12014, 12012 and 12010, and an unmasked area of the multilayer epitaxial structure 12006 is removed by dry etching to such a depth that the sapphire substrate 2042 is exposed. Thus, multilayer epitaxial structures 2006, each of which constitutes the LED chip 2002 (shown in Fig. 14B) , are formed on the sapphire substrate 2024 (step B2) . Subsequently, an Rh/Pt/Au film is formed by a technique such as an electron beam evaporation method, on the upper main surface of each multilayer epitaxial structure 2006 (i.e. on the p-AlGaN layer 2010) . Thus, the high-reflective electrode 2016 is formed (step C2) . In parallel to the steps A2 to C2, steps D2 to E2 shown in Fig. 16 are conducted. Holes 2044 and 2046 are created by dry etching in a high-resistive Si substrate 12004 in a thickness direction of the substrate 12004. The holes 2044 and 2046 are filled' with Pt by electroless deposition, to form the through holes
2034 and 2038 (step D2) . After this, a Ti/Pt/Au film is applied in a predetermined area on an upper main surface of the Si substrate 12004, to form the conductive film 2018. In addition, an Au/Sn film is formed on a predetermined area on the conductive film 2018, to form the connection layer 2020 (step E2) . Subsequently, the sapphire substrate 2042 is placed on the Si substrate 12004 so as that the high-reflective electrode 2016 formed on the sapphire substrate 2042 is in contact with the connection layer 2020 formed on the Si substrate 12004. Then, while being pressed together, the sapphire substrate 2042 and the Si substrate 12004 are heated until the connection layer 2020 reaches 300°C (step F2) . Thus, the high-reflective electrode 2016 and the connection layer 2020 are eutectic-bonded. After the high-reflective electrode 2016 and the connection layer 2020 are bonded together, a step of separating the sapphire substrate 2042 from the multilayer epitaxial structure 2006 is conducted (step G2) . In detail, a YAG laser third harmonic beam LB having a wavelength of 355 nm is irradiated to the sapphire substrate 2042 and the Si substrate 12004 from a side of the sapphire substrate 2042 in such a manner that the beam scans the entire surface of the sapphire substrate 2042. The irradiated laser beam is not absorbed by the sapphire substrate 2042, but only by an interface between the sapphire substrate 2042 and the n-AlGaN layer 2014. Here, heat is generated locally and breaks AlGaN bond around the interface. As a consequence, the sapphire substrate 2042 is separated from the multilayer epitaxial structure 2006 in terms of crystal structure (step G2 ) . However, the sapphire substrate 2042 is still adhered to the multilayer epitaxial structure 2006 by means of a layer including a metal Ga (a pyrolytic layer) . To separate the sapphire substrate 2042 from the multilayer epitaxial structure 2006 completely, the sapphire substrate 2042 and the multilayer epitaxial structure 2006 are immersed into hydrochloride or the like to dissolve the interface portion ( step H2 ) . It should be noted that the YAG laser third harmonic beam can be replaced with a KrF excimer laser having a wavelength . of 248 nm or a mercury emission line having a wavelength of 365 nm. The multilayer epitaxial structure 2006 is transferred from the sapphire substrate 2042 to the Si substrate 12004 by separating the sapphire substrate 2042 in the above-described manner. This eliminates internal stress within the multilayer epitaxial structure 2006 generated by a difference in lattice constant between the n-AlGaN layer 2014 and the sapphire substrate 2042. As a result, distortion of the multilayer epitaxial structure 2006 can be reduced. Furthermore, instead of the substrate 2004 supporting the multilayer epitaxial structure 2006 in the LED chip 2002, a substrate selected from more extensive options including a substrate that has higher heat dissipation (higher heat conductivity) than a substrate used for epitaxial growth can be used as a base substrate. In the following step 12, a silicon nitride film is formed by high-frequency sputtering or the like for insulation and surface protection, to form the insulating film 2028. Here, the silicon nitride film is formed on the upper main surface of the multilayer epitaxial structure 2006 (the n-AlGaN layer 2014) along its periphery, on the side surfaces of the multilayer epitaxial structure 2006, and on the extended portion 2018A of the conductive film 2018. After this, a Ti/Pt/Au film is applied, to form the electrode 2026 and the wiring 2036 (step J2) as one unit. An Al film is applied, to form the light reflective film 2040 (step K2) . After this, the tantrum oxide (Ta205) film 2024 is deposited by sputtering or the like on a part of the main surface of the n-AlGaN layer 2014 which is not covered by the electrode 2026, the insulating film 2028 and the wiring 2036. Then, the tantrum oxide film 2024 is partially removed by etching, to form the depressions 2022 (step L2) . Subsequently, a first macromolecule film 2048 is adhered to a front main surface, of the Si substrate 12004, on which the multilayer epitaxial structure 2006 is formed, by means of a polyester adhesive layer (not shown in Fig. 19) (step M2) . When heated, the adhesive layer foams and loses adhesivity. After this, a back main surface of the Si substrate 12004 is polished so that the thickness of the Si substrate 12004 becomes 100 μm (step N2 ) . Thus, the through holes 2034 and
2038 are exposed on the back main surface of the Si substrate
12004. Following this, a Ti/Au film is applied in a predetermined area on the back main surface of the Si substrate 12004, to form the anode and cathode power supply terminals 2030 and 2032 (step 02) . The first macromolecule film 2048 that has been adhered to the front main surface of the Si substrate 12004 is then removed. A second macromolecule film 2050 is adhered to the back main surface of the Si substrate 12004 as a dicing sheet (step P2) . Lastly, after the phosphor film 2008 is formed by screen printing (step Q2) , the Si substrate 12004 is diced by a dicing blade (DB in Fig. 20) into individual LED chips 2002 (step R2) . Thus, the LED chip 2002 is manufactured. (SECOND MODIFICATION EXAMPLE OF SECOND EMBODIMENT) According to the first modification example of the second embodiment, the anode and cathode power supply terminals 2030 and 2032 are formed on the back main surface of the Si substrate 2004, which is a base substrate, in the LED chip 2002. In a white LED chip 2102 relating to a second modification example of the second embodiment, however, one power supply terminal (an anode power supply terminal in the second modification example) is formed on a back main surface of a base substrate, and the other power supply terminal (a cathode power supply terminal in the second modification example) is formed on a front main surface of the base substrate. The LED chip 2102 is the same as the LED chip 2002, in terms of a composition and a thickness of each of layers constituting a multilayer epitaxial structure, and a composition of a phosphor film. However, the LED chip 2102 is different from the LED chip 2002 in terms of a construction of electrodes formed on both main surfaces of the multilayer epitaxial structure. In addition, the multilayer epitaxial structure of the LED chip 2102 is formed on the base substrate in the same manner as the multilayer epitaxial structure 2006. In detail, the multilayer epitaxial structure is first formed on a single-crystal substrate which is different from the base substrate, and then transferred to the base substrate. Fig. 21A is a plan view illustrating the LED chip 2102 relating to the second modification example of the second embodiment, and Fig. 21B illustrates a cross-section of the LED chip 2102 along a line GG shown in Fig. 21A. Fig. 21A shows the LED chip 2102 after removing a phosphor film 2108 (shown in Fig. 21B) . As shown in Figs.21A and 21B, the LED chip 2102 is formed in such a manner that a multilayer epitaxial structure 2106 and the phosphor film 2108 are formed on an n-type SiC substrate 2104, which is a base substrate (hereinafter referred to as "an SiC substrate 2104") . A main surface of the SiC substrate 2104 is slightly larger than a main surface of the multilayer epitaxial structure 2106. The multilayer epitaxial structure 2106 is provided on one of the main surfaces of the SiC substrate 2104 with a space being retained along a periphery of- the substrate 2104. The multilayer epitaxial structure 2106 is made up of a p-AlGaN layer 2110, an InGaN/AlGaN MQW light emitting layer 2112, and an n-AlGaN layer 2114. The layer 2110 is the closest to the SiC Substrate 2104, and then the layers 2112 and 2114 are formed in the stated order. Thus, the multilayer epitaxial structure 2106 has a diode structure. A multilayer dielectric film 2116 made of Si02/Ta05 and a high-reflective electrode 2118 made of Rh/Pt/Au are formed on a back main surface of the p-AlGaN layer 2110. The multilayer dielectric film 2116 is formed by partially removing a sheet-like multilayer dielectric film by etching with a predetermined pattern. The p-AlGaN layer 2110 is electrically connected to the high-reflective electrode 2118 in areas which are not covered by the multilayer dielectric film 2116. A conductive film 2120 is formed on an upper main surface of the SiC substrate 2104 so as to correspond to the high-reflective electrode 2118. The conductive film 2120 is made of Ti/Pt/Au, and is connected to the high-reflective electrode 2118 by a connection layer 2122 which is made of a conductive material such as Au/Sn. A Ti/Au anode power supply terminal 2124 is formed on the entire back main surface of the SiC substrate 2104. Thus, the high-reflective electrode 2118 is electrically connected to the anode power supply terminal 2124 by means of the connection layer 2122, the conductive film 2120 and the SiC substrate 2104. An ITO transparent electrode 2126 and an Si02/Ta205 multilayer dielectric film 2128 are formed in this order on an upper main surface of the n-AlGaN layer 2114. An Si02 insulating film 2130 is formed on an area, on the upper main surface of the SiC substrate 2104, in which the multilayer epitaxial structure 2106 is not formed. An insulating film 2132 made of silicon nitride is formed on the side surfaces of the multilayer epitaxial structure 2106 and on a part of an upper main surface of the multilayer epitaxial structure 2106 (so as to frame the upper main surface) . As shown in Fig.21A, a rectangular cathode power supply terminal 2134 formed by a Ti/Pt/Al film is provided on the insulating film 2130. A side of the ITO transparent electrode 2126 and a side of the cathode power supply terminal 2134 are connected to each other by means of a wiring 2136 that is formed along the side surface of the multilayer epitaxial structure 2106. The wiring 2136 is formed by a Ti/Pt/Al film, and electrically insulated from the multilayer epitaxial structure 2106 by the insulating film 2132. A light reflective film 2138 of a Ti/Pt/Al film is formed so as to surround the multilayer epitaxial structure 2106 on the insulating film 2130. The light reflective film 2138 is substantially U-shaped. The phosphor film 2108 covers the side surfaces of the multilayer epitaxial structure 2106 and a main surface (a light extraction surface) of the multilayer epitaxial structure 2106 which is opposite to a main surface to which the SiC substrate 2104 is connected. As shown in Fig. 21B, a large portion of the cathode power supply terminal 2134 is not covered by the phosphor film 2108. When power is supplied to the LED chip 2102 described above through the anode and cathode power supply terminals 2124 and 2134, the light emitting layer 2112 in the multilayer epitaxial structure 2106 emits near-ultraviolet light having a wavelength of 390 nm. In the LED chip 2102 relating to the second modification example of the second embodiment, the multilayer epitaxial structure 2106 is positioned between mirror structures, i.e. the multilayer dielectric films 2116 and 2128. The mirror structure closer to the p-AlGaN layer 2110 has a reflectance of 99% or over, and the mirror structure closer to the n-AlGaN layer 2114 has a reflectance of 90% or over. Thus, a resonant LED structure is formed. The near-ultraviolet light having a wavelengthof 390 nm emitted from the light emitting layer 2112 is emitted through the multilayer dielectric film 2128, which is the mirror structure closer to the n-AlGaN layer 2114 and has a lower reflectance, and absorbed by the phosphor film 2108. The phosphor film 2108 converts the near-ultraviolet light into white light. Having a resonant LED structure, the LED chip 2102 relating to the second modification example of the second embodiment has a better light extraction efficiency in a direction perpendicular to the light emitting layer 2112. Generally speaking, if the thickness of the p-AlGaN layer 2110 and that of the n-AlGaN layer 2114 are reduced, an electric current is likely to expand in a horizontal direction unevenly. This may cause light to be emitted unevenly from the light emitting layer 2112. The uneven light emission becomes more notable as a light emission area becomes large. According to the second modification example of the second embodiment, power is supplied to the p-AlGaN layer 2110 through the high-reflective electrode 2118. Here, the electrode 2118 is formed on the substantially entire surface of the p-AlGaN layer 2110 since the multilayer dielectric film 2116 is formed by partially etching a sheet-like multilayer dielectric film. Furthermore, power is supplied to the n-AlGaN layer 2114 through the ITO transparent electrode 2126. Here, the electrode 2126 is formed on the entire main surface of the n-AlGaN layer 2114. Thus, an electric current can be evenly injected to the entire light emitting layer.2112. This enables the entire light emitting layer 2112 evenly emit light, with it being possible to achieve a lower operation voltage. In addition, since the LED chip 2102 does not include an insulating substrate such as a sapphire substrate, an ability to withstand static electricity is improved. To mount the LED chip 2102, the anode power supply terminal 2124 is directly connected to a pad formed on a mounting substrate, and the cathode power supply terminal 2134 is connected to another pad by a bonding wire . The second modification example of the second embodiment can achieve the same effects as the first modification example. In detail, having the phosphor film 2108, the LED chip 2102 can emit white light by itself. This makes it possible to test the LED chip 2102 for its optical performance as described above before the LED chip 2102 is mounted. As a result, it can be prevented that a finished product including the mounting board on which the LED chip 2102 is mounted is rejected due to the optical performance of the LED chip 2102. In this way, the ratio of accepted finished products can be improved. In addition, the LED chip 2102 relating to the second modification example of the second embodiment can be made smaller, when compared with the above-mentioned conventional LED chip which requires an auxiliary mounting substrate- in addition to a base substrate that directly supports a multilayer epitaxial structure. In the LED chip 2102, the anode power supply terminal 2124 is formed on the back main surface of the SiC substrate 2104, and the cathode power supply terminal 2134 is formed on the upper main surface of the SiC substrate 2104. Which is to say, the both anode and cathode power supply terminals 2124 and 2134 are positioned closer to the SiC substrate 2104 than the light extraction surface of the multilayer epitaxial structure 2106. The anode power supply terminal 2124 is electrically connected to a p-electrode (the high-reflective electrode 2118) by the SiC substrate 2104. The cathode power supply terminal 2134 is connected to an n-electrode (the ITO transparent electrode 2126) by the wiring 2136 that extends from the ITO transparent electrode 2126 towards the side surface of the n-AlGaN layer 2114. When the LED chip 2102 is mounted, no components that block light, such as a bonding wire, exist on or above the light extraction surface of the multilayer epitaxial structure 2106. Therefore, light emitted from the LED chip 2102 does not contain shadow. The following part explains a manufacturing method for the LED chip 2102 described above, with reference to Figs. 22 to 27. In Figs .22 to 27 , a material to form each constituent of the LED chip 2102 is identified by a five-digit number whose first digit is one. The last four digits of the five-digit number represents a reference numeral identifying the corresponding constituent of the LED chip 2102. Firstly, as shown in Fig. 22, an n-AlGaN layer 12114, an InGaN/AlGaN MQW light emitting layer 12112, and a p-AlGaN layer 12110 are formed by epitaxial growth on a sapphire substrate 2140, which is a single-crystal substrate, in the stated order using a MOCVD method (step A3) . Here, the sapphire substrate 2140 has a diameter of two inches and a thickness of 300 μm. After this, a mask is formed on a multilayer epitaxial structure 12106 composed of the layers 12114, 12112 and 12110, and an unmasked are of the multilayer epitaxial structure 12106 is removed by dry etching to such a depth that the sapphire substrate 2140 is exposed. Thus, multilayer epitaxial structures 2106, each of which constitutes the LED chip 2102 (shown in Fig. 21B) are formed on the sapphire substrate 2140 (step B3) . Subsequently, an Si02/Ta205 multilayer dielectric film is formed on an upper main surface of each multilayer epitaxial structure 2106 (the p-AlGaN layer 2110) by RF sputtering or the like. The Si02/Ta2θ5 multilayer dielectric film is partially removed by etching to such a depth that the p-AlGaN layer 2110 is exposed, to form the multilayer dielectric film 2116 (step C3) . On the multilayer dielectric film 2116, an Rh/Pt/Au film is applied by a technique such as an electron beam evaporation method. Thus, the high-reflective electrode 2118 is formed (step D3) . In parallel to the steps A3 to D3, a step E3 shown in Fig. 23 is conducted. After an Si02 film is formed on one of main surfaces of an n-type SiC substrate 12104 so as to cover the entire surface, an area of the Si02 film in which the conductive film 2120 is to be formed is removed. Thus, the insulating film 2130 is formed 2120. After this, a Ti/Pt/Au film is applied in the Si02-film removed area, to form the conductive film 2120. On the conductive film 2120, an Au/Sn film 12122 is formed (step E3) . After this, the sapphire substrate 2140 is placed on the SiC substrate 12104 so as that the high-reflective electrode 2118 formed on the sapphire substrate 2140 is in contact with the Au/Sn film 12122 formed on the SiC substrate 12104. Then, while being pressed together, the sapphire substrate 2140 and the. SiC substrate 12104 are heated until the Au/Sn film 12122 reaches 300°C (step F3) . Thus, the high-reflective electrode 2118 and the Au/Sn film 12122 are eutectic-bonded. Consequently, since the Au/Sn film 12122 is processed to be the connection layer 2122, the high-reflective electrode 2118 and the conductive film 2120 are physically and electrically connected together. After the high-reflective electrode 2118 and the connection layer 2122 are bonded together, steps G3 and H3 (shown in Fig. 24) are conducted to separate the sapphire substrate 2140 from the multilayer epitaxial structure 2106. The steps G3 and H3 are the same as the steps G2 and H2 (shown in Fig. 17) described in the first modification example of the second embodiment, and therefore not repeatedly explained here . In the steps G3 and H3, the sapphire substrate 2140 is separated, and the multilayer epitaxial structure 2106 and the like are transferred from the sapphire substrate 2140 to the SiC substrate 12104. In the next step 13, an upper main surface of the n-AlGaN layer 2114 which is opposite to a lower main surface to which the light emitting layer 2112 is connected is flattened using a mechanical or a chemical process. After this, an ITO film is applied on the upper main surface of the n-AlGaN layer 2114 by sputtering or the like, to form the ITO transparent electrode 2126. On the ITO transparent electrode 2126, the multilayer dielectric film 2128 is formed by sputtering or the like (step J3) . The insulating film 2132 is formed by applying a silicon nitride film by sputtering or the like (step K3) . After this, a Ti/Pt/Al film is deposited in predetermined areas on the resulting surface after the step K3, to form the cathode power supply terminal 2134, the wiring 2136, and the light reflective film 2138 simultaneously (step L3) . Subsequently, a first macromolecule film 2142 is adhered to a front main surface, of the SiC substrate 12104, on which the multilayer epitaxial structure 2106 is formed, similarly to the first modification example of the second embodiment (step M3) . After this, a back main surface of the SiC substrate 12104 is polished so that the thickness of the SiC substrate 12104 becomes 100 μm. A Ti/Au film 12124 is then applied on the back main surface of the SiC substrate 12104, to form the anode power supply terminal 2124 (shown in Fig. 21B) (step N3) . The first macromolecule film 2142 that has been adhered to the front main surface of the SiC substrate 12104 is then removed. A second macromolecule film 2144 is adhered to the back main surface of the SiC substrate 12104 as a dicing sheet (step 03) . Lastly, after the phosphor film 2108 is formed by screen printing (step P3) , the SiC substrate 12104 is diced by a dicing blade (DB in Fig. 27) into individual LED chips 2102 (step Q3) . Thus, the LED chip 2102 is manufactured. (THIRD MODIFICATION EXAMPLE OF SECOND EMBODIMENT) Fig. 28A is a plan view illustrating a white LED array chip 2202 which is one type of a semiconductor light emitting device (hereinafter referred to as "an LED array chip 2202") , Fig. 28B illustrates a cross-section of the LED array chip 2202 along a line HH shown in Fig. 28A, and Fig. 28C illustrates how LEDs are connected in the LED array chip 2202. Fig. 28A shows the LED array chip 2202 after removing a phosphor film 2208 (shown in Fig. 28B and mentioned later) . A cross-section along each of a line II and a line JJ shown in Fig. 28A is the same as the cross-section shown in Fig. 28B. The LED array chip 2202 is formed in such a manner that nine LED D01 to D09 are arranged in a matrix of 3χ3 as shown in Fig.28A. The LED array chip 2202 is a square approximately 1.2 mm on a side. The LEDs D01 to D09 each have the same construction as the LED chip 2002 relating to the first modification example of the second embodiment, except for a pattern of depressions formed in order to improve light extraction efficiency and a construction of an n-electrode. The LEDs D01 to D09 are connected in series-parallel in the LED array chip 2202 as shown in Fig. 28C. In detail, the LEDs D01 to D09 are divided into groups each of which has three LEDs connected in series in a row direction, and the groups are connected in parallel. It is mentioned later how adjacent LEDs are connected to each other in the LED array chip 2202. As shown in Fig. 28B, the LED array chip 2202 includes an A1N substrate 2204 as a base substrate to support a multilayer epitaxial structure 2206. The multilayer epitaxial structure 2206 constituting each of the LEDs D01 to D09 is made up of a p-AlGaN layer 2210, an InGaN/AlGaN MQW light emitting layer 2212, and an n-AlGaN layer 2214 as in the LED chip 2002 relating to the first modification example of the second embodiment shown in Fig.14B. The layer 2210 is the closest to the A1N substrate 2204, and then the layers 2212 and 2214 are formed in the stated order. On a lower main surface of the p-AlGaN layer 2210, an Rh/Pt/Au p-electrode 2216, which is a high-reflective electrode, is formed. On an upper main surface of the A1N substrate 2204, a Ti/Pt/Au conductive film 2218 is formed. The conductive film 2218 and the p-electrode 2216 are physically and electrically connected to each other by means of an Au/Sn connection layer 2220. An upper main surface of the n-AlGaN layer 2214 (i.e. a light extraction surface of the multilayer epitaxial structure 2206) is made uneven, to have depressions 2222. This is aimed at improving light extraction efficiency. A Ti/Pt/Al n-electrode 2226 is formed along one side of the upper main surface of the n-AlGaN layer 2214 of each multilayer epitaxial structure 2206. An insulating film 2228 made of silicon nitride is formed so as to cover side surfaces and a part of an upper main surface of the multilayer epitaxial structure 2206. The following part describes how the LEDs D04 to D06 are connected in series. The LEDs 04, 05 and 06 are connected in series in this order in the following manner. A conductive film 2218 of the LED D04 is connected to an n-electrode 2226 of the LED D05 by a bridging wire 2234A. A conductive film 2218 of the LED D05 is connected to an n-electrode 2226 of the LED D06 by a bridging wire 2234B. In the same manner, the LEDs DOl, 02 and 03 are connected in series in this order, and the LEDs D07, 08 and 09 are connected in series in this order. A Ti/Pt/Al cathode power supply terminal 2230 is formed in a left-half area of the upper main surface of the A1N substrate 2204, and a Ti/Pt/Al anode power supply terminal 2232 is formed in a right-half area. An n-electrode 2226 of the LED D04 is electrically connected to the cathode power supply terminal 2230 by a wiring 2236A. In the same manner, n-electrodes 2226 of the LEDs DOl and D07 are connected to the cathode power supply terminal 2230. Thus, the n-electrodes 2226 of the LEDs DOl, D04 and D07 are electrically connected in parallel. A conductive film 2218 of the LED D06 extends so as to overlap the anode power supply terminal 2232 and to be connected to the anode power supply terminal 2232 at the overlap. In the same manner, conductive films 2218 of the LEDs D03 and D09 are connected to the anode power supply terminal 2232. Thus, the p-electrodes 2216 of the LEDs D03, D06 and D09 are electrically connected in parallel. As seen from the above description, the cathode and anode power supply terminals 2230 and 2232 also function as a wiring to connect, in parallel, the groups of the LEDs that are connected in series. The cathode and anode power supply terminals 2230 and 2232 cover a major part of an area, on the upper main surface of the AlN substrate 2204, in which the multilayer epitaxial structures 2206 are not formed, and also function as a light-reflective film. As described above, the nine LEDs DOl to D09 are connected in series-parallel and arranged in a matrix on the AlN substrate 2204 so that a space is left along edges of the AlN substrate 2204. The phosphor film 2208 covers side surfaces and the light extraction surface of each of the LEDs DOl to D09 (the multilayer epitaxial structures 2206) formed on the AlN substrate 2204. Here, the phosphor film 2208 may have the same composition as the phosphor film 2008 relating to the first modification example of the second embodiment. A Ti/Au film 2238 is formed on a back main surface of the AlN substrate 2204. When power is supplied to the LED array chip 2202 described above through the cathode and anode power supply terminals 2230 and 2232, the light emitting layer 2212 of each of the LEDs DOl to D09 emits near-ultraviolet light having a wavelength of 390 nm. The near-ultraviolet light emitted from the light emitting layer 2212 is, to a large extent, emitted from the n-AlGaN layer 2214 and absorbed by the phosphor film 2208. The phosphor film 2208 converts the near-ultraviolet light into white light. In the LED array chip 2202, the p-electrode 2216 is formed as a high-reflective electrode, and the depressions 2222 are formed on the upper main surface of the n-AlGaN layer 2214 (the light extraction surface) . These constructions contribute to significantly improve the light extraction efficiency of the multilayer epitaxial structure 2206. The cathode and anode power supply terminals 2230 and 2232 function as a light-reflective film. This construction contributes to improve light extraction efficiency of the LED array chip 2202. To mount the LED array chip 2202, the Ti/Au film 2238 is directly connected to a pad formed on a mounting substrate . The cathode power supply terminal 2230 and the anode power supply terminals 2232 are each connected to a power-supply pad formed on the mounting substrate by wire bonding. Here, since the LED array chip 2202 includes the phosphor film 2208, the LED array chip 2202 can emit white light by itself. This and other features of the LED array chip 2202 produce the same effects as the first and second modification examples of the second embodiment. The following part describes a manufacturing method for the LED array chip 2202 described above, with reference to Figs. 29 to 32. In Figs. 29 to 32, a material to form each constituent of the LED array chip 2202 is identified by a five-digit number whose first digit is one. The last four digits of the five-digit number represents a reference numeral identifying the corresponding constituent of the LED chip 2202. Firstly, as shown in Fig. 29, an n-AlGaN layer 12214, an InGaN/AlGaN MQW light emitting layer 12212, and a p-AlGaN layer 12210 are formed by epitaxial growth on a sapphire substrate 2240, which is a single-crystal substrate, in the stated order using a MOCVD method (step A4) . Here, the sapphire substrate 2240 has a diameter of two inches and a thickness of 300 μm. After this, a mask is formed on a multilayer epitaxial structure 12206 composed of the layers 12214, 12212 and 12210, and an unmasked area of the multilayer epitaxial structure 12206 is removed by dry etching to such a depth that the sapphire substrate 2240 is exposed. Thus, multilayer epitaxial structures 2206, which constitute the LED array chip 2202 (shown in Fig. 28B) , are formed on the sapphire substrate 2240 (step B4) . Subsequently, an Rh/Pt/Au film is formed by a technique such as an electron beam evaporation method, on the upper main surface of each multilayer epitaxial structure 2206 (i.e. the p-AlGaN layer 2210) . Thus, the p-electrode 2216 is formed (step C4) . In parallel to the steps A4 to C4 in Fig. 29, a step D4 shown in Fig. 30 is conducted. In the step D4 shown in Fig. 30, a Ti/Pt/Au film is applied in a predetermined ar.ea on an upper main surface of an AlN substrate 12204, to form the conductive film 2218. An Au/Sn film 12220 is applied on part of the conductive film 2218, to form the connection layer 2220. A Ti/Au film 12238 is plated on the entire back main surface of the AlN substrate 12204. ~ After this, the sapphire substrate 2240 is placed on the AlN substrate 12204 so as that the p-electrode 2216 formed on the sapphire substrate 2240 is in contact with the Au/Sn film 12220 formed on the AlN substrate 12204. Then, while being pressed together, the sapphire substrate 2240 and the AlN substrate 12204 are heated until the Au/Sn film 12220 reaches approximately 300°C (step E4) . Thus, the p-electrode 2216 and the Au/Sn film 12220 are eutectic-bonded together. Since the Au/Sn film 12220 is processed to be the connection layer 2220, the p-electrode 2216 and the conductive film 2218 are physically and electrically connected together. After the p-electrode 2216 and the conductive film 2218 are bonded together by the connection layer 2220, steps F4 and G4 (shown in Figs. 30 and 31) are conducted to separate the sapphire substrate 2240 from the multilayer epitaxial structure 2206. The steps F4 and G4 are the same as the steps G2 and H2 (shown in Fig. 17) described in the first modification example of the second embodiment, and therefore not repeatedly explained here. After the sapphire substrate 2240 is separated and the multilayer epitaxial structure 2206 and the like are transferred from the sapphire substrate 2240 to the AlN substrate 12204 as describe above, a step H4 (shown in Fig. 31) is conducted. In the step H4, a silicon nitride film is formed by high-frequency sputtering or the like for insulation and surface protection, to form the insulating film 2228. Here, the silicon nitride film is formed along a periphery of the upper main surface of the multilayer epitaxial structure 2206 (the n-AlGaN layer 2214) , and on the side surfaces of the multilayer epitaxial structure 2206. After this, anisotropic etching is conducted, using KOH solution or the like, to an area of the upper main surface of the n-AlGaN layer 2214 in which the insulating film 2228 is not formed. Thus, the depressions 2222 are formed (step 14) . Subsequently, a Ti/Pt/Al film is applied in predetermined areas on the resulting surface after the step 14, to form the n-electrode 2226, the bridging wire 2234, the wiring 2236, and the cathode and anode power supply terminals 2230 and 2232 simultaneously (step J4). After the phosphor film 2208 is formed by screen printing (step K4) , a macromolecule film 2242 is adhered to the back main surface of the AlN substrate 12204 as a dicing sheet. Lastly, the AlN substrate 12204 is diced by a dicing blade (DB in Fig 32) into individual LED array chips 2202 (step L4) . Thus, the LED array chip 2202 is manufactured. According to the third modification example of the second embodiment, the LED array chip 2202 includes the nine LEDs DOl to D9 (light emitting elements), and is a square approximately 1.2 mm on a side. However, the third modification example of the second embodiment is not limited to such. The LED array chip 2202 may include any number of LEDs (light emitting elements) . (FOURTH MODIFICATION EXAMPLE OF SECOND EMBODIMENT) Fig. 33 is an external perspective view illustrating a white LED module 2300 including LED chips 2002 relating to the first modification example of the second embodiment (shown in Fig. 14B) . This LED module 2300 is attached to a lighting unit 2332 (mentioned later and shown in Figs. 36A and 36B) . The LED module 2300 includes a ceramics substrate 2302 that is in a shape of a circle having a diameter of 5 cm and is made of AlN and 217 resin lenses 2304. A guiding depression 2306 used to attach the LED module 2300 to the lighting unit 2332 and terminals 2308 and 2310 to receive a power supply from the lighting unit 2332 are provided in the ceramics substrate 2302. Fig.34A is a plan view illustrating the LED module 2300, Fig. 34B illustrates a cross-section of the LED module 2300 along a line KK shown in Fig. 34A, and Fig. 34C is an enlargement view illustrating a chip mounted area shown in Fig. 34B. As shown in Fig. 34C, a gold plating 2312 is applied to a back main surface of the ceramics substrate 2302 for improving heat dissipation. The LED chip 2002 is mounted at a location, on an upper surface of the ceramics substrate 2302, corresponding to a center of each of the lenses 2304 having a shape of a circle as shown in Fig.34A. In total, 217 LED chips 2002 are mounted on the ceramics substrate 2302. The ceramics substrate 2302 is constituted by two ceramics substrates 2314 and 2316 each of which is 0.5 mm in thickness and mainly made of AlN. Other than AlN, the ceramics substrate 2314 and 2316 can be made of Al203, BN, MgO, ZnO, SiC or diamond. The LED chips 2002 are mounted on the lower ceramics substrate 2316. Taper through holes 2318 are provided in the upper ceramics substrate 2314, so as to create spaces for mounting the LED chips 2002. A cathode pad 2320 and an anode pad 2322 (shown in Fig. 35B) are provided at the location, on an upper surface of the ceramics substrate 2316, where each LED chip 2002 is to be mounted. Each of the cathode pad 2320 and the anode pad 2322 is made up of Au plating applied on copper (Cu) . Here, the cathode power supply terminal 2032 and the anode power supply terminal 2030 of the LED chip 2002 (shown in Fig. 14B) are respectively connected to the cathode pad 2320 and the anode pad 2322 on which PbSn solder has been formed. A step of forming the PbSn solder on the cathode pad 2320 and the anode pad 2322 can be omitted, if AuSn solder is plated beforehand on the cathode power supply terminal 2032 and the anode power supply terminal 2030. After all of the LED chips 2002 are mounted on pairs of the cathode pad 2320 and the anode pad 2322, the ceramics substrate 2302 is heated through a reflow furnace to a temperature equal to a melting point of the solder. Thus, the 217 LED chips 2002 can be simultaneously connected to the ceramics substrate 2302. This reflow soldering process can be conducted if a shape of each of the cathode pad 2320 and the anode pad 2322, an amount of the applied solder, and a shape of the anode power supply terminal 2030 and the cathode power supply terminal 2032 are optimized. Here, a silver paste or a bump may be used instead of the solder. Before being mounted, the LED chips 2002 have been tested for their optical performance, such as unevenness of color and a color temperature, and have passed the test. According to the fourth modification example of the second embodiment, the LED chip 2002 includes the phosphor film 2008, and can emit white light by itself. As described above, this makes it possible to test the LED chip 2002 for its optical performance before mounting. Consequently, it can be prevented that the LED module 2300 including the LED chips 2002 is rejected due to poor optical performance of the LED chips 2002. Consequently, the ratio of accepted finished products (LED modules 2300) is improved. An aluminum reflection film 2324 is formed on a wall of each through hole 2318 provided in the upper ceramics substrate 2314 and on an upper surface of the ceramics substrate 2314 as shown in Fig. 34C. After mounted on the ceramics substrate 2316, the LED chips 2002 are covered by a first resin (e.g. a silicone resin
2326) . Subsequently, the lenses 2304 are formed by injection molding with use of a second resin (e.g. an epoxy resin 2328) . The 217 LED chips 2002 are connected in series-parallel by a wiring pattern 2330 (shown in Fig. 35A) formed on the upper main surface of the ceramics substrate 2316. Fig. 35A is a plan view illustrating the LED module 2300 after removing the lenses 2304 and the upper ceramics substrate 2314. As describe above, the anode pad 2322 and the cathode pad 2320 (shown in Fig. 35B) are provided at the location, on the upper main surface of the ceramics substrate 2316, where each LED chip 2002 is to be mounted. The anode pads 2322 and the cathode pads 2320 are connected by the wiring pattern 2330 in such a manner that 31 LED chips 2002 are connected in series and seven groups of the 31 LED chips 2002 are connected in parallel. The wiring pattern 2330 is connected at one end to the positive terminal 2308 (shown in Fig. 34A) by a through hole (not shown in Fig. 35A) , and connected at the other end to the negative terminal 2310 (shown in Fig. 34A) by another through hole (not shown in Fig. 35A) . The LED module- 2300 described above is attached to the lighting unit 2332. The LED module 2300 and the lighting unit 2332 constitute a lighting apparatus 2334. Fig. 36A is a schematic perspective view illustrating the lighting apparatus 2334, and Fig. 34B is a bottom plan view illustrating the lighting apparatus 2334. The lighting unit 2332 is, for example, fixed on a ceiling of a room. The lighting unit 2332 includes a power supply circuit (not shown in Figs. 36A and 36B) that converts alternating-current power (e.g. 100 V, 50/60Hz) supplied from a commercial power source into direct-current power required for driving the LED module 2300. The following part describes a construction to attach the LED module 2300 to the lighting unit 2332, with reference to Fig. 37. The lighting unit 2332 has a circular depression 2336 in which the LED module 2300 is to be fitted. A bottom surface of the circular depression 2336 is flat. An internal thread (not shown in Fig. 37) is created, in the vicinity of an open end of the circular depression 2336, on an inside wall of the circular depression 2336. Flexible power supply terminals 2338 and 2340 and a guiding protrusion 2342 protrude from the inside wall of the circular depression 2336, between the internal thread and the bottom surface of the circular depression 2336. The power supply terminals 2338 and 2340 are respectively positive and negative. An O-ring 2344 made of silicon rubber and a ring screw 2346 are used to attach the LED module 2300 to the lighting unit 2332. The ring screw 2346 has a shape of a ring that has a substantially rectangular cross-section. An external thread (not shown in Fig. 37) is created on an outer surface of the ring screw 2346, and a depression 2346A is provided. The following part describes a procedure of attaching the LED module 2300 to the lighting unit 2332. To start with, the LED module 2300 is fitted in the circular depression 2336 in the following manner. The ceramics substrate 2302 of the LED module 2300 is positioned between the bottom surface of the circular depression 2336 and the power supply terminals 2338 and 2340. The guiding protrusion 2342 is fitted in the guiding depression 2306, so as to align the positive terminal 2308 and the negative terminal 2310 with the power supply terminal 2338 and the power supply terminal 2340 respectively. After the LED module 2300 is fitted in the circular depression 2336, the ring screw 2346 to which the O-ring 2344 has been attached is screwed into the circular depression 2336 and fixed. Thus, the positive and negative terminals 2308 and 2310 are respectively connected to the power supply terminals 2338 and 2340, so that the terminals 2308 and 2310 are electrically connected to the terminals 2338 and 2340 reliably. In addition, the substantially entire lower surface of the ceramics substrate 2302 is connected to the flat bottom surface of the circular depression 2336. This enables heat generated in the LED module 2300 to be effectively conducted to the lighting unit 2332, thereby improving a cooling effect of the LED module 2300. Here, silicone grease may be applied to the lower surface of the ceramics substrate 2302 and the bottom surface of the circular depression 2336 to further improve the heat conduction efficiency from the LED module 2300 to the lighting unit 2332. When power is supplied to this lighting apparatus 2334 from a commercial power source, each LED chip 2002 emits white light in the manner described above. The white light is emitted through the lenses 2304. When an electric current of 1 A is applied to the LED module 2300, a total luminous flux of 4,000 lm, an on-axis luminous intensity of 10,000 cd, and an emission spectrum shown in Fig. 38 are observed. In the above description of the second embodiment, the semiconductor light emitting devices relating to the first to third modification examples of the second embodiment are, as an example., used for lighting, such as a lighting module and a lighting apparatus. However, the semiconductor light emitting devices relating- to the second embodiment may be also used for display, to be specific, as a light source in a display element. Such a display element includes a surface mounting device (SMD) LED which is formed in such a manner that a semiconductor light emitting device (e.g. an LED chip) is mounted on a ceramics substrate and sealed by a transparent epoxy resin. For example, a single SMD LED may be used by itself. In this case, an SMD LED is mounted on a remote controller for a home electric appliance including a television, a video cassette recorder and an air conditioner, or used as a main switch lamp of such a home electric appliance . Alternatively, a plurality of SMD LEDs may be combined to be used as dots provided in a dot matrix display device for displaying a letter, a number, a symbol and the like. The second embodiment of the present invention is not limited to the above modification examples. The second embodiment also includes the following modification examples . (1) According to the first to third modification examples of the second embodiment, a multilayer epitaxial structure (12006, 12106 and 12206) is formed by epitaxial growth on a sapphire substrate which is a single-crystal substrate (2042, 2140 and 2240) . In addition, the multilayer epitaxial structure is divided into individual LED (array) chips (2002, 2102 and 2202) on the sapphire substrate (see step B2 in Fig. 15, step B3 in Fig. 22, and step B4 in Fig.
29) . However, the second embodiment is not limited to such.
Alternatively, the multilayer epitaxial structure as a whole (12006, 12106 and 12206) may be first transferred to a base substrate (the high-resistive Si substrate 12004 in Fig. 16, the n-type SiC substrate 12104 in Fig.23 and the AlN substrate 12204 in Fig.30) which constitutes the LED (array) chip (2002, 2102 and 2202) . The multilayer epitaxial structure is then divided into the individual LED (array) chips (2002, 2102 and 2202) on the base substrate. (THIRD EMBODIMENT) Fig. 39 is an external perspective view illustrating a construction of an LED array chip 3002 which is one type of a semiconductor light emitting device. Fig. 40 is a plan view illustrating the LED array chip 3002. Fig. 30 mainly intends to illustrate how LEDs DI to D36 (described later) are arranged, and therefore does not show minute depressions and protrusions on the surfaces of the LEDs. Fig. 40 does not show a phosphor film 3050 (shown in Fig. 39 and mentioned later) and depressions formed on a p-electrode (mentioned later) . As shown in Figs. 39 and 40, the LED array chip 3002 is formed in such a manner that a multilayer epitaxial structure including a light emitting layer is formed on a non-doped (high-resistive) SiC substrate 3004 which is a semiconductor substrate (hereinafter referred to as "an SiC substrate 3004") . Here, the multilayer epitaxial structure is formed like a circular cylinder as a whole. The circular-cylinder-like multilayer epitaxial structure formed on the rectangular (square in the third embodiment) SiC substrate 3004 is hereinafter referred to as a cylinder member 3006. The cylinder member 3006 is divided into a plurality of areas (12 areas in the third embodiment) by division grooves 3008 that radiate equiangularly . Which is to say, the cylinder member 3006 is divided into 12 flabellate members with a central angle of around 30 degrees. Each flabellate member is further divided into a plurality of areas (three areas in the third embodiment) in a diameter direction by two division grooves 3010 and 3011 that are formed concentrically. As a result, the cylinder member 3006 formed by the multilayer epitaxial structure is divided into 36 areas (12x3), and each area constitutes an independent light emitting element, i.e. an LED. The 36 LEDs are respectively identified by reference marks DI to D 36 as shown in Fig. 39 to be distinguished from each other. The concentrical division grooves 3010 and 3011 are respectively positioned so that a light emitting layer of each of the LEDs DI to D36 has the substantially same area. This is achieved when the ratio of L01:L02:L03 (lengths L01, L02 and L03 are shown in Fig. 40) is 1:V2:V3, irrespective of a size (a diameter) of the cylinder member 3006. The SiC substrate 3004 is a square approximately 2 mm on a side, and the cylinder member 3006 has a diameter of approximately 1.8 mm. The following part describes a construction of each LED in the LED array chip 3002 with reference to cross-sectional views in Fig. 41. Fig. 41A illustrates a cross-section of LEDs Dl and D2 in the LED array chip 3002 along a line PP shown in Fig. 40, and Fig. 41B illustrates a cross-section of LEDs D35 and D36 along a line QQ shown in Fig. 40. Each of the LEDs DI to D36 is formed by a multilayer epitaxial structure having the same construction. The following description is made taking the LED D35 as an example. Each LED is made up of an n-AlGaN buffer layer 3012 (having a thickness of 30 nm) , a DBR layer 3014 composed of 30 periods of n-AlGaN/GaN (having a total thickness of 3 μm) , an n-GaN clad layer 3016 (having an Si-doping amount of 3χl018 cm-3 and a thickness of 200 nm) , an InGaN/GaN MQW light emitting layer 3018 composed of six periods of InGaN (having a thickness of 2 nm) /GaN (having a thickness of 8 nm) , a p-GaN clad layer 3020 (having an Mg-doping amount of IxlO19 cm-3 and a thickness of 200 nm) , a p-GaN contact layer 3022 (having an Mg-doping amount of 3χl019 cm-3 and a thickness of 200 nm) , and an n+-GaN regrowth layer 3024 (having an Si-doping amount of IxlO19 cm-3 and a thickness of 100 nm) . These layers 3012, 3014, 3016, 3018, 3020, 3022 and 3024 are formed on the SiC substrate 3004 in the stated order. Which is to say, a light emitting layer (the MQW light emitting layer 3018) is sandwiched between a conductive layer (the n-GaN clad layer 3016 on a side of the SiC substrate 3004) and a conductive layer (the p-GaN clad layer 3020, the p-GaN contact layer 3022 and the n+-GaN regrowth layer 3024 on a side of a light extraction surface) in each of the LEDs DI to D36 relating to the third embodiment. An Ni/Au p-electrode 3026 is formed on the n+-GaN regrowth layer 3024 and the p-GaN contact layer 3022. A Ti/Au n-electrode 3028 is formed on the n-GaN clad layer 3016. When power is supplied to this LED through the p-electrode 3026 and the n-electrode 3028, the light emitting layer 3018 emits blue light having a wavelength of 460 nm. Depressions are formed at a predetermined interval on an upper surface of the p-electrode 3026, which is a light extraction surface, in order to improve light extraction efficiency. The depressions are provided by forming the n+-GaN regrowth layer 3024 partially on the p-GaN contact layer 3022 in a manner described later. It should be noted that each of the semiconductor layers 3012, 3014, 3016, 3018, 3020, 3022 and 3024 making up the multilayer epitaxial structure that emits blue light may have a different composition. Each layer may be made of a III-V nitride semiconductor which is generally represented by a chemical formula of BzAlxGaι-x-y-zInyNι-v-wAsvPWr where O≤x≤l, O≤y≤l, O≤z≤l, O≤x+y+z≤l, O≤v≤l, O≤w≤l, O≤v+w≤l (generally represented as BAlGalnNAsP and hereinafter referred to as a GaN semiconductor material) . It is known that the GaN semiconductor material can emit light having a wavelength within a wide range of 200 nm (ultraviolet light) and 1700 nm (infrared light) depending on its composition. In recent years, the GaN semiconductor material has been commonly used to produce light having a shorter wavelength than blue-green light. The 36 LEDs DI to D36 described above are connected in series on the SiC substrate 3004. The following part describes how the LEDs DI to D36 are connected to each other. As shown in Figs. 41A and 41B, an Si3N4 insulating film 3030 is formed so as to cover side surfaces of the LEDs DI, D2, D35 and D36 and the division groove 3011. On the insulating film 3030, a wiring 3032a, which is formed by a Ti/Pt/Au metal thin film, is provided to connect an n-electrode 3028a of the LED Dl and a p-electrode 3026B of the LED D2. Likewise, a wiring 3032b is formed on the insulating film 3030 to connect an n-electrode 3028c of the LED D35 and a p-electrode 3026d of the LED D36. In the same manner, the LEDs D2 to D35 are connected by a wiring 3022. As shown in Fig. 40, for example, an n-electrode 3028e of the LED D3 and a p-electrode 3026f of the LED D4 are connected by a wiring 3032C. An n-electrode 3028g of the LED D6 and a p-electrode 3026h of the LED D7 are connected by a wiring 3032d. Thus, all of the LEDs Dl to D36 are connected in series as shown in Fig. 42A. Out of the 36 LEDs that are connected in series in the LED array chip 3002, the LED Dl is an LED on a higher potential end. Therefore, a p-electrode 3026a of the LED Dl is an anode electrode of the LED array chip 3002. The LED D36 is an LED on a lower potential end. Therefore, an n-electrode 3028d of the LED D36 is a cathode electrode of the LED array chip 3002. As shown in Fig. 40, Ti/Pt/Au conductive patterns 3034 and 3036 are formed, so as to surround the multilayer epitaxial structure, on a front main surface, of the SiC substrate 3004, on which the multilayer epitaxial structure is formed. The conductive pattern 3034 is connected to the p-electrode of the LED Dl by a wiring 3032e, and the conductive pattern 3036 is connected to the n-electrode 3028d of the LED D36 by a wiring 3032f. Fig. 42B illustrates a back main surface of the LED array chip 3002. As shown in Fig. 42B, two Ti/Pt/Au power supply terminals 3038 and 3040 are formed on a main surface of the SiC substrate 3004 which is opposite to the front main surface on which the LEDs Dl to D36 are formed. The power supply terminal 3038 is connected to the conductive pattern 3034 by two through holes 3042 and 3044 provided in the SiC substrate 3004. Similarly, the power supply terminal 3040 is connected to the conductive pattern 3036 by two through holes 3046 and 3048 provided in the SiC substrate 3004. Thus, the power supply terminal 3038 is electrically connected to the p-electrode 3026a of the LED Dl, and the power supply terminal 3040 is electrically connected to the n-electrode 3028d of the LED D36. The through holes 3042, 3044, 3046 and 3048 are each formed by filling a hole having a diameter of 30 μm provided in the SiC substrate 3004 with Pt . When an electric current of 50 mA is applied to the 36 LEDs that are connected in series through the power supply terminals 3038 and 3040 with heat dissipation being ensured, an operation voltage of 120 V is observed. Furthermore, each of the LEDs Dl to D36 can produce an even amount of light. This is because the light emitting layer 3018 in each of the LEDs Dl to D36 has substantially the same area, and an electric density of each LED is therefore substantially the same. As a result, unevenness of illuminance on a surface to which light from the LED array chip 3002 is irradiated can be prevented. The phosphor film 3050 is formed on the front main surface of the SiC substrate 3004 so as to cover an upper surface and a side surface of the cylinder member 3006 (the multilayer epitaxial structure) . The phosphor film 3050 is made of a light-transmitting resin such as silicone in which particles of a. yellow phosphor (Sr, Ba) 2Si04 :Eu2+ and fine - particles of Si02 are dispersed. The phosphor film 3050 is applied at a substantially even thickness of approximately 50 μm on and around the cylinder member 3006. Here, the light-transmitting resin may be an epoxy resin or a polyimide resin instead of silicone. The light emitting layer 3018 of each of the LEDs Dl to D36 emits blue light, and the phosphor within the phosphor film 3050 converts part of the blue light into yellow light. The blue light and the yellow light mix together, to generate white light. In the LED array chip 3002, the multilayer epitaxial structure including a light emitting layer is formed like a circular cylinder, and the phosphor film 3050 is applied on and around the multilayer epitaxial structure, at a substantially even thickness. Which is to say, the phosphor film 3050 is formed like a circular-cylindrical case with bottoms. Thus, a spot shape of light emitted from the LED array chip 3002 is substantially circular. With this feature, the LED array chip 3002 is suitable as a light source for lighting. In addition, the DBR layer 3014, which is a light-reflective layer, is formed between the light emitting layer 3018 and the SiC substrate 3004. The DBR layer 3014 reflects, towards a light extraction surface, 99% or more of blue light emitted from the light emitting layer 3018 towards the SiC substrate 3004. This improves light extraction efficiency of each LED in the LED array chip 3002. The phosphor film 3050 covers, at the same thickness, not only the upper surfaces of the outmost LEDs Dl, D6, D7, D12, D15, D18, D19, D24, D25, D30, D31 and D36 but also outer side surfaces of these outmost LEDs. Accordingly, the phosphor film 3050. converts, into yellow light, not only blue light emitted from the upper surface of each of these LEDs but also blue light emitted from the side surface of the light emitting layer 3018 of each of these LEDs. Thus, unevenness of color can be reduced. In this description, blue light indicates light having a wavelength from 400 nm inclusive to 500 nm exclusive, and yellow light indicates light having a wavelength from 550 nm inclusive to 600 nm exclusive. According to the above description, the LEDs Dl to D36 each emit light with a peak emission wavelength of 460 nm. However, the LEDs Dl to D36 may be configured to emit light with a different peak emission wavelength within the above-mentioned range. It is generally accepted that unevenness of color occurs only in a white LED that uses visible light having a spectral component of a wavelength within a range of 380 nm and 780 nm (purple to red) for an excitation light source. In other words, unevenness of color does not occur in a white LED having near-ultraviolet light as an excitation light source. However, ultraviolet light with a peak emission wavelength of 370 nm also has a spectral component of a wavelength no less than 380 nm (visible light) . Therefore, a white LED using near-ultraviolet light as an excitation light source can have a problem of unevenness of color, depending on a ratio of spectral components of a wavelength no less than 380 nm. Accordingly, the third embodiment is applicable to an LED having a light emitting layer that emits near-ultraviolet light to achieve the same effects of reducing unevenness of color for the same reasons stated above. Which is to say, the third embodiment of the present invention is applicable to an LED including a light emitting layer that emits light including a spectral component of a wavelength at least within a range of 380 nm and 780 nm to reduce unevenness of color. The application of the third embodiment is not limited to an LED including a light emitting layer that emits blue light having a peak emission wavelength of 460 nm as describe above. The following part describes a manufacturing method for the LED array chip 3002 described above. The manufacturing method of the LED array chip 3002 includes a variety of processes. The following part first describes a process of forming the cylinder member 3006 (shown in Fig. 39), with reference to Figs. 43 to 47. To start with, a multilayer epitaxial structure is formed on an upper main surface of a non-doped SiC substrate 13004 shown in Fig. 43A (hereinafter simply referred to as "a substrate 13004") . After this, an etching resist (a positive resist) is applied on the entire upper main surface, of the substrate 13004, on which the multilayer epitaxial structure is formed, and the etching resist is then heated to be cured. Thus, a resist film 3061 is formed as shown in Fig. 43B. After this, a photomask 3059 is placed on the substrate 13004 as shown in Fig. 44. The photomask 3059 is formed by printing a pattern 519 in black on a glass plate. The pattern 519 is formed in such a manner that a plurality of patterns 592 shown in Fig. 45A are closely arranged in a matrix. The resist film 3061 is exposed using a mercury lamp while the photomask 3059 is placed on the substrate 13004. Thus, areas of the resist film 3061 which correspond to not-printed transparent portions (white portions shown in Fig. 45A) of the photomask 3059 are softened. The softened areas of the resist film 3061 are dissolved by an organic solvent, to be removed. Thus, a resist mask 3063 shown in Fig 46A is formed. After the resist mask 3063 is formed, an Au film is formed on the entire upper main surface of the substrate 13004 by deposition. Subsequently, a portion of the Au film which is formed on the resist mask 3063 is removed together with the resist mask 3063 by an organic solvent that can dissolve the cured resist mask 3063. Thus, as shown in Fig. 46B, metal masks 3058 are formed at locations of white circles shown in Fig. 46A. Each metal mask 3058 masks an area in which the cylinder member 3006 is to be formed. In more detail, each metal mask 3058 masks the white portions shown in Fig. 45A. An unmasked area of the multilayer epitaxial structure formed on the substrate 13004 is removed by dry etching to such a depth that the n-GaN clad layer 3016 (shown in Fig. 41B) is exposed. The dry etching is conducted by leaving the substrate 13004 within a gas including chlorine ions for a predetermined time. Thus, cylinder members each having a substantially half height of the cylinder member 3006
(hereinafter referred to as half cylinder members 600 shown in Figs. 47A and 47B) are formed. After the dry etching is completed, the metal masks 3058 are removed by an iodine solvent . By the above-described etching step (hereinafter referred to as "a first etching step") , the half cylinder members 600 are formed as shown in Figs. 47A and 47B. Fig. 47A illustrates part of a cross-section along a line SS shown in Fig. 47B, and Fig. 47C is an enlargement view illustrating a portion U shown in Fig. 47B. After the first etching step, a second etching step is conducted to remove portions of the multilayer epitaxial structure which do not constitute the half cylinder members 600. Thus, cylinder members 3006 (shown in Fig.39) are formed on the substrate 13004. The reason for conducting the first and second etching steps to form the cylinder members 3006 is explained later. The second etching step is the same as the first etching step except for that the photomask 3059 (shown in Fig. 44) has a different pattern. Accordingly, the second etching step is not repeatedly described in detail here, and only briefly mentioned in the following description of the manufacturing method of the LED array chip 3002. The following description is made with a particular focus on each one of the LED array chips 3002 on the substrate 13004. The following part describes how each one of the LED array chips 3002 is manufactured on the substrate 13004, with reference to Figs. 48 to 51. In Figs. 48 to 51, a material to form each constituent of the LED array chip 3002 is identified by a five-digit number whose first digit is -one. The last four digits of the five-digit number represents a reference numeral identifying the corresponding constituent of the LED array chip 3002. Figs. 48 to 51 each illustrate a cross-section along a line RR shown in Fig. 40. Firstly, as shown in Fig. 48, an n-AlGaN buffer layer 13012, a DBR layer 13014 composed of 30 periods of n-AlGaN/GaN, an n-GaN clad layer 13016, an InGaN/GaN MQW light emitting layer 13018, a p-GaN clad layer 13020, and a p-GaN contact layer 13022 are formed on the non-doped SiC substrate 13004 in the stated order using a MOCVD method (step A5) . Here, the non-doped SiC substrate 13004 has a diameter of two inches and a thickness of 300 μm. After this, an Si02 film 3054 is formed on the p-GaN contact layer 13022, and a photoresist layer is then formed on the Si02 film 3054 in the following manner . A parallel-line pattern in which lines are arranged at a predetermined interval (e.g. 1200 lines/mm) is formed by interferometric exposure using a He-Cd laser beam. This is conducted three times, and any two of the three parallel-line patterns intersect with each other at an angle of 120 degrees. Thus, a resist mask 3056 is formed (step B5) . A portion of the Si02 film 3054 which is not masked by the resist mask 3056 is removed by etching (step C5) . Then, the resist mask 3056 is removed (step D5) . After this, an n+-GaN layer 13024 is regrown using a MOCVD method (step E5) . Here, a portion of the n+-GaN layer 13024 formed on the Si02 film 3054 is not shown in the step E5 shown in Fig. 49. The portion of the n+-GaN layer 13024 formed on the Si02 film 3054 is then removed together with the Si02 film 3054 (step F5) . The next step G5 is the first etching step described above. The step G5 is conducted to create a surface to connect the n-electrode 3028 (shown in Fig.41) . Firstly, theAumetal mask 3058 is formed in the above-described manner. The metal mask 3058 masks an area in which the p-electrode 3026 of each LED is to be formed. An unmasked area of a lamination composed of the layers 13012 to 13024 is removed by dry etching to a depth of an approximately half of the thickness of the n-GaN clad layer 13016 (step G5) . Thus, a surface 3060 to connect the n-electrode 3028 is created. The metal mask 3058 is removed prior to the next step H5. The step H5 is the second etching step mentioned above, and conducted to create a surface to form the conductive patterns 3034 and 3036, and the division grooves 3008, 3010 and 3011. To be specific, a metal mask 3062 is formed so as to mask the resulting surface after the step G5 except for areas in which the conductive patterns 3034 and 3036 and the division grooves 3008, 3010 and 3011 are to be formed. As mentioned above, this metal mask 3062 formation step (step H5) is the same as the first etching step (the step G5) except for that the photomask 3059 (shown in Fig. 44) which is used for exposure of the resist film 3061 has a different pattern. Fig. 45B illustrates a pattern used in the metal mask 3062 formation step. Regarding Fig. 45B, 12 radiating bold lines 20108 correspond to areas in which the division grooves 3008 (see Fig. 40) are to be formed. Two bold concentrical circles 20110 and 20111 respectively correspond to areas in which the division grooves 3010 and 3011 (see Fig. 40) are to be formed. A black area surrounding a white area formed like a circle corresponds to an area in which a surface to form the conductive patterns 3034 and 3036 is to be created. Which is to say, the metal mask 3062 is formed so as to mask areas which correspond to constituents of the cylinder member 3006. Unmasked areas of a lamination composed of the rest of the layer 13016 and the layers 13014 and 13012 are removed by dry etching to such a depth that the substrate 13004 is exposed, to create the conductive pattern formation surface 3064 and the division groove 3011 (3008 and 3010) . At the same time, the cylinder member 3006 (see Fig. 39) is formed (step H5) . After the dry etching, the metal mask 3062 is removed prior to the next step. As seen from the above description of the steps G5 and H5, the cylinder member 3006 is formed by conducting two different etching steps to create the surface to form the n-electrode 3028, which is positioned on the n-GaN clad layer 3016. Subsequent to the step H5, an Si3N4 insulating film 13030 is formed by sputtering or the like for insulation and surface protection (step 15) . A mask 3066 is then formed so as to mask the Si3N4 film 13030 except for an area in which the p-electrode 3026 is to be formed. An unmasked area of the Si3N4 film 13030 is • removed by etching. After this, an Ni/Au thin film 13026 is applied by deposition. Thus, the Ni/Au p-electrode 3026 is formed (stepJ5) . A portion of the Ni/Au thin film 13026 formed on the mask 3066 (not shown in Fig. 50) is removed together with the mask 3066 prior to the next step. Here, the p-electrode 3026 may be formed by an ITO transparent thin film, instead of the Ni/Au thin film. The same procedure as in the step J5 is conducted to form the n-electrode 3028. Specifically speaking, a mask 3068 is formed so as to mask the resulting surface after the step J5, except for an area in which the n-electrode 3028 is to be formed. An unmasked area of the Si3N4 film 13030 is removed by etching, and then a Ti/Au thin metal film 13028 is formed by deposition. Thus, the n-electrode 3028 is formed (step K5) . A portion of the Ti/Au film 13028 formed on the mask 3068 (not shown in Fig. 50) is removed together with the mask 3068 prior to the next step. After this, a mask 3070 is formed so as to mask the resulting surface after the step K5 except for an area in which each of the through holes 3042, 3044, 3046 and 3048 is to be formed. An unmasked area is removed by etching, to form an opening 3072 that is 200 μm in depth. Then, the opening 3072 is filled with Pt by electroless deposition or the like
(step L5) . The mask 3070 is removed prior to the next step. Subsequently, a mask 3074 is formed so as to mask the resulting surface after the step L5, except for areas in which the conductive patterns 3034 and 3036 and the wiring 3032 are to be formed. Then, a Ti/Pt/Au thin metal film is formed by deposition. Thus, the Ti/Pt/Au conductive patterns 3034 and 3036 and the Ti/Pt/Au wiring 3032 are formed (step M5) .
A portion of the Ti/Pt/Au film which is formed on the mask 3074 (not shown in Fig. 51) is removed together with the mask 3074 prior to the next step. After this, a lower main surface of the SiC substrate 13004 is polished, so that the thickness of the SiC substrate 13004 becomes 150 μm and the through holes 3042, 3044, 3046 and 3048 are exposed on the lower main surface of the SiC substrate 13004 (step N5) . Subsequently, a mask 3076 is formed so as to mask the lower main surface of the SiC substrate 13004 except for areas in which the power supply terminals 3038 and 3040 are to be formed. Then, a Ti/Pt/Au thin metal film is formed on the lower main surface of the SiC substrate 13004 by deposition. Thus, the Ti/Pt/Au power supply terminals 3038 and 3040 are formed (step 05) . A portion of the Ti/Pt/Au film which is formed on the mask 3076 (not shown in Fig. 51) is removed together with the mask 3076 prior to the next step. After this, the phosphor film 3050 is formed in the following manner. A silicone resin in which particles of a yellow phosphor (Sr, Ba) 2Si04 :Eu+2 and fine particles of Si02 are dispersed is applied by printing, and then heated to be cured. After being cured, the phosphor film 3050 is polished so that a thickness of the phosphor film 3050 in a direction perpendicular to the upper main surface of the SiC substrate 13004 becomes 50 μm (step P5) . Here, a color temperature of white light emitted from the LED array chip 3002 is determined by a ratio between a quantity of blue light from the light emitting layer 3018 and that of yellow light from the phosphor film 3050. The ratio is adjusted by a percentage of the phosphor particles in the silicone resin and the thickness of the phosphor film 3050. To be specific, when the percentage of the phosphor particles is higher or the thickness of the phosphor film 3050 is larger, the ratio of the yellow light is higher. Here, a high ratio of the yellow light means that the white light has a lower color temperature. As described above, the phosphor film 3050 is formed in such a manner that the silicone resin including the phosphor is first applied at a thickness larger than a designed thickness, and then polished to have the designed thickness. This enables the phosphor film 3050 to be formed at an even thickness and to have the designed thickness . As a result, unevenness of color can be reduced, and a desired color temperature can be exactly achieved. Lastly, the substrate 13004 is divided into individual LED array chips 3002 by dicing. In this way, the LED array chip 3002 (shown in Fig. 39) is manufactured. Fig. 52 is an external perspective view illustrating a white LED module 3200 including LED array chips 3002 described above (hereinafter simply referred to as "an LED module 3200") . The LED module 3200 is attached to a lighting unit 3240 (mentioned later) . The LED module 3200 includes a ceramics substrate 3202 that is in a shape of a circle having a diameter of 5 cm and is made of AlN and three lenses 3204, 3206 and 3208 made of glass . A guiding depression 3210 used to attach the LED module 3200 to the lighting unit 3240 and terminals 3212 and 3214 to receive a power supply from the lighting unit 3240 are provided in the ceramics substrate 3202. Fig. 53A is a plan view illustrating the LED module 3200, Fig. 53B illustrates a cross-section of the LED module 3200 along a line XX shown in Fig. 53A, and Fig. 53C is an enlargement view illustrating a portion Y shown in Fig. 53B. As shown in Figs.53A and 53B, a guiding hole (a through hole) 3216 is provided in the center of the ceramics substrate 3202 to attach the LED module 3200 to the lighting unit 3240. As shown in Fig. 53C, a gold plating 3217 is applied to a lower surface of the ceramics substrate 3202 for improving heat dissipation. The LED array chip 3002 is mounted at a location, on an upper surface of the ceramics substrate 3202, corresponding to a center of each of the lenses 3204, 3206 and 3208 having a shape of a circle as shown in Fig. 53A. In total, three LED array chips 3002 are mounted on the ceramics substrate 3202. The ceramics substrate 3202 is made up of two ceramics substrates 3201 and 3203 each of which has a thickness of 0.5 mm and is mainly made of AlN. The ceramics substrates 3201 and 3203 may be made of Al203, BN, MgO, ZnO, SiC and diamond, instead of AlN. The LED array chips 3002 are mounted on the lower ceramics substrate 3201. Taper through holes 3215 are provided in the upper ceramics substrate 3203, so as to create spaces for mounting the LED array chips 3002. A cathode pad 3218 and an anode pad 3220 (shown in Fig. 54B) are provided at the location, on an upper surface of the ceramics substrate 3201, where each LED array chip 3002 is to be mounted. Each of the cathode pad 3218 and the anode pad 3220 is made up of nickel (Ni) plating and then gold (Au) plating applied on copper (Cu) . The LED array chip 3002 is mounted on the ceramics substrate 3201 in such a manner that the SiC substrate 3004 is adhered to the ceramics substrate 3201. Here, the power supply terminals 3036 and 3038 are respectively connected to the cathode pad 3218 and the anode pad 3220 using solder. Instead of solder, a gold bump or a silver paste may be used. In the LED array chip 3002, no components that block light, such as a bonding wire, exist on or above a light extraction surface. Therefore, light emitted from the LED array chip 3002 does not contain shadow. This feature is highly valuable for a light source used for lighting. Before being mounted, the LED array chips 3002 have been tested for their optical performance, such as unevenness of color, and have passed the test. According to the third embodiment, the LED array chip 3002 includes the phosphor film 3050, and can emit white light by itself. As describe above, this makes it possible to test the LED array chip 3002 for its optical performance before the LED array chip 3002 is mounted. Consequently, it can be prevented that the LED module 3200 including the LED array chips 3002 is rejected due to poor optical performance of the LED array chips 3002. As a result, the ratio of accepted finished products (LED modules 3200) to all finished products can be improved. An aluminum reflection film 3219 is formed on a wall of each through hole 3215 provided in the upper ceramics substrate 3203 and on an upper surface of the ceramics substrate 3203. The lenses 3204, 3206 and 3208 are adhered to the ceramics substrate 3203 using an adhesive agent 3221. The adhesive agent 3221 may be a silicone resin, an epoxy resin or the like. The three LED array chips 3002 are connected in parallel by a wiring pattern formed on the upper surface of the ceramics substrate 3201. Fig.54A is a plan view illustrating the LED module 3200 after removing the lenses 3204, 3206 and 3208. In Fig. 54A, the three LED array chips- 3002 are distinguished from each other by addition of marks of A, B and C. As described above, the anode pad 3220 and the cathode pad 3218 (Fig.54B) are provided at the location, on the upper surface of the ceramics substrate 3201, where each of the LED array chips 3002A, 3002B'and 3002C is mounted. The anode pads 3220 that are respectively connected to the LED array chips 3002A, 3002B and 3002C are electrically connected to each other by a wiring pattern 3236. The wiring pattern 3236 is connected to the positive terminal 3212 at its end by a through hole 3237. The cathode pads 3218 that are respectively connected to the LED array chips 3002A, 3002B and 3002C are electrically connected to each other by a wiring pattern 3238. The wiring pattern 3238 is connected to the negative terminal 3214 at its end by a through hole 3239. In other words, the LED array chips 3002A, 3002B and 3002C are connected in parallel by the wiring patterns 3236 and 3238. The LED module 3200 described above is attached to the lighting unit 3240. The LED module 3200 and the lighting unit 3240 constitute a lighting apparatus 3242. Fig. 55A is a schematic perspective view illustrating the lighting apparatus 3242, and Fig. 55B is a bottom plan view illustrating the lighting apparatus 3242. The lighting unit 3240 is, for example, fixed on a ceiling of a room. The lighting unit 3240 includes a power supply circuit (not shown in Figs.55A and 55B) that converts alternating-current power (e.g. 100 V, 50/60Hz) supplied from a commercial power source into direct-current power required for driving the LED module 3200. The following part describes a construction to attach the LED module 3200 to the lighting unit 3240, with reference to Fig. 56. The lighting unit 3240 has a circular depression 3244 in which the LED module 3200 is to be fitted. A bottom surface of the circular depression 3244 is flat. An internal thread (not shown in Fig. 56) is created, in the vicinity of an open end of the circular depression 3244, on an inside wall of the circular depression 3244. Flexible power supply terminals 3246 and 3248 and a guiding protrusion 3230 protrude from'the inside wall of the circular depression 3244, between the internal thread and the bottom surface of the circular depression 3244. The power supply terminals 3246 and 3248 are respectively positive and negative. A guiding pin 3252 is provided in the center of the bottom surface of the circular depression 3244. An O-ring 3254 made of silicon rubber and a ring screw 3256 are used to attach the LED module 3200 to the lighting unit 3240. The ring screw 3256 has a shape of a ring that has a substantially rectangular cross-section. An external thread (not shown in Fig. 56) is created on an outer surface of the ring screw 3256, and a depression 3258 is provided. The following part describes a procedure of attaching the LED module 3200 to the lighting unit 3240. To start with, the LED module 3200 is fitted in the circular depression 3244 in the following manner. The ceramics substrate 3202 of the LED module 3200 is positioned between the bottom surface of the circular depression 3244 and the power supply terminals 3246 and 3248. The guiding pin 3252 is fitted in the guiding hole 3216, so as to align the center of the LED module 3200 with the center of the circular depression 3244. Furthermore, the guiding protrusion 3230 is fitted in the guiding depression 3210, so as to align the positive and negative terminals 3212 and 3214 with the power supply terminals 3246 and 3248 respectively. After the LED module 3200 is fitted in the circular depression 3244, the ring screw 3256 to which the O-ring 3254 has been attached is screwed into the circular depression 3244 and fixed. Thus, the positive and negative terminals 3212 and 3214 are respectively connected to the power supply terminals 3246 and 3248, so that the terminals 3212 and 3214 are electrically connected to the terminals 3246 and 3248 reliably. In addition, the substantially entire lower surface of the ceramics substrate 3202 is connected to the flat bottom surface of the circular depression 3244. This enables heat generated in the LED module 3200 to be effectively conducted to the lighting unit 3240, thereby improving a cooling effect of the LED module 3200. Here, silicone grease may be applied to the lower surface of the ceramics substrate 3202 and the bottom surface of the circular depression 3244 to further improve the heat conduction efficiency from the LED module 3200 to the lighting unit 3240. When power is supplied to this lighting apparatus 3242 from a commercial power source, the light emitting layer 3018 of each LED in the LED array chip 3002 emits blue light. Here, part of the blue light is converted into yellow light by the phosphor within the phosphor film 3050. The blue light and the yellow light mix together, to generate white light. The white light is emitted through the lenses 3204, 3206 and 3208. As described above, a spot shape of the white light generated by the LED array chip 3002 is substantially circular. The lighting apparatus 3242 including a plurality of LED array chips 3002 (three chips 3002 in the third embodiment) can also produce light which has a substantially circular spot shape when irradiated to a surface positioned distant enough from the lighting apparatus 3242 in relation to a diameter of each of the lenses 3204, 3206 and 3208 and an interval between any two of the lenses 3204, 3206 and 3208. When an electric current of 150 mA is -applied to the LED module 3200, a total luminous flux of 800 lm, an on-axis luminous intensity of 1500 cd, and an emission spectrum shown in Fig. 57 are observed. (FOURTH EMBODIMENT) The following part describes an SMD LED including one of the LED chips (2, 2002, 2102, 2202 and 3002) relating to the first to third embodiments. An SMD LED relating to a fourth embodiment may include any one of the LED chips 2, 2002, 2102, 2202 and 3002. The following description is made taking the LED array chip 2 relating to the first embodiment as an example. Fig. 58A is a plan view illustrating an SMD LED 502 relating to the fourth embodiment (hereinafter referred to as "an LED 502"), and Fig. 58B illustrates a cross-section of the LED 502 along a line ZZ shown in Fig. 58A. The LED 502 includes a rectangular ceramic substrate 504, and a pair of power supply terminals 506 and 508 each of which is formed so as to partially cover both upper and lower main surfaces of the ceramic substrate 504. The LED array chip 2 is mounted so as to extend over edge portions, on the upper main surface of the ceramic substrate 504, of the power supply terminals 506 and 508. The LED array chip 2 is sealed using an epoxy resin 510 as a sealing member. When power is supplied to the LED 502 described above
- through the power supply terminals 506 and 508, the LED array chip 2 emit white light. The white light is emitted outward through the epoxy resin 510. The LED 502 is surface-mounted on an electronic device in such a manner that edge portions, on the lower main surface of the ceramic substrate 504, of the power supply terminals 506 and 508 are electrically connected to a wiring pattern formed on a printed-wiring board of the electronic device. It should be noted that the present invention is not limited to the above-described embodiments. The present invention includes the following modification examples. (1) According to the third embodiment, the multilayer epitaxial structure -is formed like a circular cylinder. However, the third embodiment is not limited to such. The multilayer epitaxial structure may be formed like a cylinder with N-sided polygons for bases, where N is an integer equal to or larger than five. In this way, a spot shape of light emitted from the LED array chip 3002 is more like a circle than a rectangle. In addition, it is preferable that the multilayer epitaxial structure is formed as a cylinder with regular iV-sided polygons for bases, where N is an even integer. In this way, the spot shape of light emitted from the LED array chip 3002 can be point-symmetric, such as a circle. (2) According to the third embodiment, light emitted from the light emitting module 3200 or the lighting apparatus 3242 has a circular (point-symmetric) spot shape, as a circular spot shape of light emitted from each LED array chip 3002 (semiconductor light emitting device) is scarcely worsened. However, the light emitted from the light emitting module 3200 or the lighting apparatus 3242 may be required to have a point-asymmetric spot shape, depending on use of the light emitting module 3200 or the lighting apparatus 3242. The semiconductor light emitting device relating to the third embodiment can easily produce light having a desired point-asymmetric spot shape since it is comparatively easy to convert light with a point-symmetric spot shape into light with a desired point-asymmetric spot shape. This conversion is achieved by providing a known mechanism for converting a point-symmetric spot shape into a desired spot shape, on the light extraction side of the semiconductor light emitting device. When such a mechanism is provided, the lighting apparatus 3242 is, for example, used for a head lamp of a car. (3) According to the third embodiment, the circular-cylinder-like multilayer epitaxial structure is divided into 36 portions, to form 36 independent LEDs (light emitting elements) . However, the number of the independent LEDs is not limited to 36. Alternatively, the cylinder-like multilayer epitaxial structure may not be divided. Which is to say, an LED chip that is constituted by one LED (light emitting element) may be obtained, instead of the LED array chip 3002. (4) According to the third embodiment, the cylinder member 3006 is formed by removing an unnecessary area of all of the layers 13012, 13014, 13016, 13018, 13020, 13022 and 13024 making up the multilayer epitaxial structure (see step H5 in Fig. 49) . However, it may not be all of these layers which are removed. (However, the division grooves 3008, 3010 and 3011 need to be formed by removing corresponding areas of all of these layers.) Alternatively, the cylinder member 3006 can be formed by removing an unnecessary area of the layers from an outmost layer (the n+-GaN layer 13024) to a conductive layer between the light emitting layer 13018 and the SiC substrate 13004 (the n-GaN clad layer 13016) . As long as the unnecessary area of these layers 13024, 13022, 13020, 13018 and 13016 is removed, a side surface of the light emitting layer is exposed on a side surface of the cylinder member 3006. Furthermore, the phosphor film 3050 can be formed, at a large thickness, not only on the upper main surface of the outmost layer 13024 but also on the side surface of the cylinder member 3006. As a consequence, unevenness of color can be reduced. (5) According to the third embodiment, the SiC substrate 13004 is used as a base substrate for forming, by epitaxial growth, the multilayer epitaxial structure made up of the n-AlGaN buffer layer 13012 to the p-GaN contact layer 13022. The reason for this is explained in the following. The SiC substrate 13004 has equal or higher heat conductivity compared with copper and aluminum. This feature enables heat generated within the light emitting layer 3018 to be effectively conducted to the ceramics substrate 3201, which is a printed-wiring board on which the LED array chips 3002 are mounted. Accordingly, the SiC substrate 13004 can be replaced with any of an AlN substrate, a GaN substrate, a ■ BN substrate and an Si substrate which similarly have high heat conductivity. Alternatively, the SiC substrate 13004 can be replaced with a common sapphire substrate to realize the present invention, even though the sapphire substrate has slightly lower heat conductivity. (6) According to the third embodiment, the LED array chip 3002 is a square approximately 2 mm on a side. However, the third embodiment is not limited to such. (7) According to the third embodiment, depressions are formed by providing the n+-GaN regrowth layer 3024, in order to improve light extraction efficiency. However, the third embodiment is not limited to such. The depressions may be formed in a different manner. For example, a pattern mask is formed on the p-GaN contact layer 3022 and etching is then conducted. Alternatively, a dielectric layer made of, for example, Ta20 is formed on the p-GaN contact layer 3022. After this, a pattern mask is formed on the dielectric layer and etching is then conducted. (8) According to the third embodiment, the cylinder member 3006 (the multilayer epitaxial structure) is formed by epitaxial growth on the SiC substrate 3004 which is a constituent of the LED array chip 3002. However, the third embodiment is not limited to such. Similarly to the first to third modification examples of the second embodiment, the cylinder member 3006 (the multilayer epitaxial structure) is first formed by epitaxial growth on a single-crystal substrate (e.g. a sapphire substrate) which is different from the SiC substrate 3004, and then transferred to the SiC substrate 3004. In other words, the SiC substrate 3004 which is a base substrate constituting the LED array chip 3002 may or may not be a substrate on which the cylinder member 3006 (the multilayer epitaxial structure) is formed by epitaxial growth .
Industrial Applicability As describe above, a semiconductor light emitting device relating to an embodiment of the present invention is applicable to a lighting apparatus. This is because a light emitting device used for a lighting apparatus needs to be tested for its optical performance, for example, unevenness of color, before being mounted on the lighting apparatus.

Claims

1. A semiconductor light emitting device comprising: a base substrate; a multilayer epitaxial structure that includes a first conductive layer, a second conductive layer and a light emitting layer that is formed between the first conductive layer and the second conductive layer, the multilayer epitaxial structure being formed on the base substrate in such a manner that the first conductive layer is positioned closer to the base substrate than the second conductive layer is; and a phosphor film that covers a main surface of the multilayer epitaxial structure which faces away from the base substrate, and every side surface of the multilayer epitaxial structure from a layer including the main surface to include at least the light emitting layer.
2. The semiconductor light emitting device of Claim 1, wherein the multilayer epitaxial structure is epitaxially grown on the base substrate.
3. The semiconductor light emitting device of Claim 2, wherein the multilayer epitaxial structure further includes a reflective layer which is formed between the base substrate and the first conductive layer.
4. The semiconductor light emitting device of Claim 3, wherein the reflective layer is made of an AlGaN semiconductor.
5. The semiconductor light emitting device of Claim 2, further comprising: a first electrode that is formed on the first conductive layer; a second electrode that is formed on the second conductive layer; a first power supply terminal and a second power supply terminal that are formed on a main surface of the base substrate which faces away from the multilayer epitaxial structure; a first conductive member including a first through hole that is provided in the base substrate, and electrically connecting the first electrode and the first power supply terminal; and a second conductive member including a second through hole that is provided in the base substrate, and electrically connecting the second electrode and the second power supply terminal .
6. The semiconductor light emitting device of Claim 5, wherein the multilayer epitaxial structure is formed on the base substrate leaving a space along each edge of a main surface of the base substrate which faces the multilayer epitaxial structure, and the first through hole and the second through hole are provided in a peripheral portion of the base substrate, the peripheral portion corresponding to the space.
7. The semiconductor light emitting device of Claim 2, the base substrate is made of one of SiC, AlN, GaN, BN, and Si .
8. The' semiconductor light emitting device of Claim 2, wherein the main surface of the .multilayer epitaxial structure which faces away from the base substrate is uneven so as to improve light extraction efficiency.
9. The semiconductor light emitting device of Claim 2, wherein light emitted from the light emitting layer has a wavelength component within a range of 380 nm to 780 nm.
10. The semiconductor light emitting device of Claim 1, wherein the multilayer epitaxial structure is first epitaxially grown on a single-crystal substrate, and then transferred to the base substrate.
11. The semiconductor light emitting device of Claim 10, further comprising: a metal reflective film that is sandwiched between the multilayer epitaxial structure and the base substrate.
12. The semiconductor light emitting device of Claim 10, wherein the first conductive layer is a p-type semiconductor layer, and the second conductive layer is an n-type semiconductor layer.
13. The semiconductor light emitting device of Claim 12, wherein a main surface of the n-type semiconductor layer which faces away from the light emitting layer is uneven so as to improve light extraction efficiency.
14. The semiconductor light emitting device of Claim 1, wherein the multilayer epitaxial structure is shaped as a cylinder having a substantially circular or iV-sided polygonal cross-section, where N is an integer equal to or larger than five.
15. The semiconductor light emitting device of Claim 14, wherein the phosphor film is applied at a substantially same thickness .
16. The semiconductor light emitting device of Claim 14, wherein the main surface of the base substrate which faces the multilayer epitaxial structure is rectangular.
17. The semiconductor light emitting device of Claim 14, wherein the multilayer epitaxial structure further includes a light reflective layer which is formed between the first conductive layer and the base substrate.
18. The semiconductor light emitting device of Claim 14, wherein the multilayer epitaxial structure is epitaxially grown on the base substrate.
19. The semiconductor light emitting device of Claim 14, wherein the multilayer epitaxial structure is divided into a plurality of portions by a division groove that reaches the base substrate, the plurality of portions being a plurality of independent light emitting elements.
20. The semiconductor light emitting device of Claim 19, wherein in each of the plurality of independent light emitting elements, a first electrode is formed on a part of a main surface of the first conductive layer, the part being created by partially removing the second conductive layer and the light emitting layer, and a second electrode is formed on a main surface of the second conductive layer, and the plurality of independent light emitting elements are connected with each other in series in such a manner that a first electrode of one independent light emitting element is connected to a second electrode of another independent light emitting element using a wiring formed by a thin metal film.
21. The semiconductor light emitting device of Claim 20, wherein the light emitting layer included in each independent light emitting element has a substantially same area.
22. A light emitting module comprising: a printed-wiring board; and a semiconductor light emitting device claimed in one of Claims 1 to 21, and is mounted on the printed-wiring board.
23. A lighting apparatus including a light emitting module claimed in Claim 22.
24. A display element including, as a light source, a semiconductor light emitting device claimed in one of Claims 1 to 21.
25. A manufacturing method of a semiconductor light emitting device, comprising steps of: forming a multilayer epitaxial structure including a light emitting layer on a main surface of a base substrate by epitaxial growth; dividing the multilayer epitaxial structure into a plurality of portions by removing a part of the multilayer epitaxial structure so as that an area of the main surface of the base substrate is externally exposed; forming a phosphor film that covers the exposed area of the main surface of the base substrate and all exposed surfaces of each of the plurality of portions; and dicing the base substrate according to each of the plurality of portions .
26. A manufacturing method of a semiconductor light emitting device, comprising steps of: forming a multilayer epitaxial structure including a light emitting layer on a main surface of a single-crystal substrate by epitaxial growth; forming a first metal film on an outmost layer of the multilayer epitaxial structure; forming a second metal film on a base substrate; connecting the single-crystal substrate and the base substrate in such a manner that the first metal film is connected to the second metal film; separating the single-crystal substrate from the multilayer epitaxial structure; dividing the multilayer epitaxial structure into a plurality of portions each of which is the semiconductor light emitting device, prior to the adhering step or subsequent to the separating step; forming a phosphor film that covers all exposed surfaces of each of the plurality of portions, subsequent to the separating step and the dividing step; and dicing the base substrate according to each of the plurality of portions.
27. A manufacturing method of a semiconductor light emitting device, comprising steps of: forming a multilayer epitaxial structure including a light emitting layer on a main surface of a base substrate by epitaxial growth; dividing the multilayer epitaxial structure into a plurality of cylinder members by removing a part of the multilayer epitaxial structure, each of the plurality of cylinder members having a substantially circular or W-sided polygonal cross-section, where N is an integer equal to or larger than five; forming a phosphor film that covers all exposed surfaces of each cylinder member; and dicing the base substrate according to an area including each cylinder member.
28. The manufacturing method of Claim 27, further comprising a step of: creating a groove that reaches the base substrate, within each of the plurality of cylinder members, to divide the cylinder member into a plurality of portions.
PCT/JP2004/011713 2003-08-28 2004-08-09 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device WO2005022654A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP04748309.4A EP1658642B1 (en) 2003-08-28 2004-08-09 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US10/567,510 US7675075B2 (en) 2003-08-28 2004-08-09 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US11/969,102 US8324632B2 (en) 2003-08-28 2008-01-03 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US12/615,600 US8207548B2 (en) 2003-08-28 2009-11-10 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US13/651,101 US8692285B2 (en) 2003-08-28 2012-10-12 Semiconductor light emitting device, light emitting module, lighting apparatus and display element

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2003305402A JP4160881B2 (en) 2003-08-28 2003-08-28 Semiconductor light emitting device, light emitting module, lighting device, and method for manufacturing semiconductor light emitting device
JP2003-305402 2003-08-28
JP2003340020A JP4116960B2 (en) 2003-09-30 2003-09-30 Semiconductor light emitting device, light emitting module, lighting device, and method for manufacturing semiconductor light emitting device
JP2003-340020 2003-09-30
JP2004-026851 2004-02-03
JP2004026851 2004-02-03

Related Child Applications (4)

Application Number Title Priority Date Filing Date
US10/567,510 A-371-Of-International US7675075B2 (en) 2003-08-28 2004-08-09 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US11/969,102 Division US8324632B2 (en) 2003-08-28 2008-01-03 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US12/615,600 Division US8207548B2 (en) 2003-08-28 2009-11-10 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US13/651,101 Division US8692285B2 (en) 2003-08-28 2012-10-12 Semiconductor light emitting device, light emitting module, lighting apparatus and display element

Publications (2)

Publication Number Publication Date
WO2005022654A2 true WO2005022654A2 (en) 2005-03-10
WO2005022654A3 WO2005022654A3 (en) 2005-06-09

Family

ID=34279545

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/011713 WO2005022654A2 (en) 2003-08-28 2004-08-09 Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device

Country Status (4)

Country Link
US (4) US7675075B2 (en)
EP (1) EP1658642B1 (en)
TW (1) TWI384637B (en)
WO (1) WO2005022654A2 (en)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005062389A3 (en) * 2003-12-24 2006-02-09 Matsushita Electric Ind Co Ltd Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
US20070172987A1 (en) * 2005-06-14 2007-07-26 Roger Dugas Membrane-based chip tooling
US7521727B2 (en) 2006-04-26 2009-04-21 Rohm And Haas Company Light emitting device having improved light extraction efficiency and method of making same
WO2010033299A1 (en) * 2008-09-16 2010-03-25 Osram Sylvania Inc. Lighting module
EP2201616A2 (en) * 2007-10-15 2010-06-30 LG Innotek Co., Ltd. Light emitting device and method for fabricating the same
EP2232596A2 (en) * 2007-12-28 2010-09-29 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
EP1864339A4 (en) * 2005-03-11 2010-12-29 Seoul Semiconductor Co Ltd Led package having an array of light emitting cells coupled in series
US7955531B1 (en) 2006-04-26 2011-06-07 Rohm And Haas Electronic Materials Llc Patterned light extraction sheet and method of making same
US7956378B2 (en) * 2006-02-23 2011-06-07 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
CN102129138A (en) * 2010-01-15 2011-07-20 Lg伊诺特有限公司 Image display apparatus and method of manufacturing the same
EP1995794A4 (en) * 2006-03-10 2011-08-31 Panasonic Elec Works Co Ltd Light-emitting device
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
US8097887B2 (en) 2006-03-30 2012-01-17 Sumitomo Chemical Company, Limited Light emitting device having a monotone decreasing function
US8183585B2 (en) 2008-09-16 2012-05-22 Osram Sylvania Inc. Lighting module
US8188486B2 (en) 2008-09-16 2012-05-29 Osram Sylvania Inc. Optical disk for lighting module
EP2365527A3 (en) * 2010-02-19 2014-01-29 Samsung Electronics Co., Ltd. Semiconductor light emitting device having multi-cell attray, light emitting module, and illumination apparatus
EP2843705A1 (en) * 2013-08-30 2015-03-04 LG Innotek Co., Ltd. Light emitting device package and lighting device for vehicle including the same
US9054282B2 (en) 2007-08-07 2015-06-09 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same
US9099574B2 (en) 2005-09-30 2015-08-04 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing it
AT516416A1 (en) * 2014-10-21 2016-05-15 Zizala Lichtsysteme Gmbh Printed circuit board having a plurality of arranged on the circuit board in at least one group of electronic components
EP1995780B1 (en) * 2007-05-24 2017-08-02 Stanley Electric Co., Ltd. Semiconductor light emitting apparatus
CN107634081A (en) * 2016-07-15 2018-01-26 三星显示有限公司 Light-emitting device and its manufacture method
FR3055944A1 (en) * 2016-09-15 2018-03-16 Valeo Vision LUMINOUS CONVERSION FOR A HIGH RESOLUTION LIGHT SOURCE
CN108346675A (en) * 2017-12-28 2018-07-31 海迪科（南通）光电科技有限公司 Light-emitting diode LED or laser diode LD array device and preparation method thereof
US10908344B2 (en) 2018-04-19 2021-02-02 Lextar Electronics Corporation Light-emitting module structure
US11444228B2 (en) 2017-11-20 2022-09-13 Sony Corporation Light emitting device and display apparatus

Families Citing this family (202)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7928455B2 (en) * 2002-07-15 2011-04-19 Epistar Corporation Semiconductor light-emitting device and method for forming the same
US7675075B2 (en) 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
WO2006065010A1 (en) * 2004-12-13 2006-06-22 Lg Chem, Ltd. METHOD FOR MANUFACTURING G a N-BASED LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY
US20150295154A1 (en) 2005-02-03 2015-10-15 Epistar Corporation Light emitting device and manufacturing method thereof
TWI260800B (en) * 2005-05-12 2006-08-21 Epitech Technology Corp Structure of light-emitting diode and manufacturing method thereof
CN100550443C (en) * 2005-07-06 2009-10-14 Lg伊诺特有限公司 Nitride semiconductor LED and manufacture method thereof
CN101331249B (en) * 2005-12-02 2012-12-19 晶体公司 Doped aluminum nitride crystals and methods of making them
JP2007288139A (en) * 2006-03-24 2007-11-01 Sumitomo Chemical Co Ltd Monolithic light emitting device and method for operation
JP5479888B2 (en) * 2006-03-30 2014-04-23 クリスタル アイエス インコーポレイテッド Method for controllably doping aluminum nitride bulk crystals
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JP2007305708A (en) * 2006-05-10 2007-11-22 Rohm Co Ltd Semiconductor light emitting element array, and illumination apparatus using the same
JP4946195B2 (en) * 2006-06-19 2012-06-06 サンケン電気株式会社 Semiconductor light emitting device and manufacturing method thereof
KR100828900B1 (en) 2006-09-04 2008-05-09 엘지이노텍 주식회사 Package of light emitting diode and manufacturing method thereof
KR20090082923A (en) * 2006-11-15 2009-07-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 High light extraction efficiency light emitting diode (led) through multiple extractors
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8323406B2 (en) * 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9028612B2 (en) 2010-06-30 2015-05-12 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
WO2008094464A2 (en) * 2007-01-26 2008-08-07 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101569024B (en) * 2007-02-21 2011-01-12 松下电器产业株式会社 Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
JP4753904B2 (en) 2007-03-15 2011-08-24 シャープ株式会社 Light emitting device
US20080272687A1 (en) * 2007-05-02 2008-11-06 Wen-Te Lin White light LED
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7799600B2 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods
US8309967B2 (en) 2007-05-31 2012-11-13 Chien-Min Sung Diamond LED devices and associated methods
US8232563B2 (en) * 2007-06-14 2012-07-31 Epistar Corporation Light-emitting device
JP5278317B2 (en) * 2007-06-29 2013-09-04 豊田合成株式会社 Manufacturing method of light emitting diode
TWI396298B (en) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd Phosphor coating method for light emmitting semiconductor device and applications thereof
JP4892445B2 (en) * 2007-10-01 2012-03-07 昭和電工株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
CN100483762C (en) * 2008-02-25 2009-04-29 鹤山丽得电子实业有限公司 LED device making method
JP2009206246A (en) * 2008-02-27 2009-09-10 Stanley Electric Co Ltd Semiconductor light emitting device
US8916890B2 (en) * 2008-03-19 2014-12-23 Cree, Inc. Light emitting diodes with light filters
US8431950B2 (en) * 2008-05-23 2013-04-30 Chia-Lun Tsai Light emitting device package structure and fabricating method thereof
US8871024B2 (en) * 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
JP2012502482A (en) * 2008-09-08 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー Electrically pixelated light emitting device
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
TWI447942B (en) * 2008-09-12 2014-08-01 Helio Optoelectronics Corp Method for fabricating an axis-symmetric light emitting diode (led) die
JP5123269B2 (en) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド Light emitting device and manufacturing method thereof
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
TW201017863A (en) * 2008-10-03 2010-05-01 Versitech Ltd Semiconductor color-tunable broadband light sources and full-color microdisplays
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
EP2356701A2 (en) 2008-11-13 2011-08-17 3M Innovative Properties Company Electrically pixelated luminescent device incorporating optical elements
KR101154758B1 (en) * 2008-11-18 2012-06-08 엘지이노텍 주식회사 Semiconductor light emitting device and LED package having the same
JP4799606B2 (en) * 2008-12-08 2011-10-26 株式会社東芝 Optical semiconductor device and method for manufacturing optical semiconductor device
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
JP2010147446A (en) 2008-12-22 2010-07-01 Panasonic Electric Works Co Ltd Light-emitting device
US9029896B2 (en) 2008-12-31 2015-05-12 Epistar Corporation Light-emitting device
US8563963B2 (en) * 2009-02-06 2013-10-22 Evergrand Holdings Limited Light-emitting diode die packages and methods for producing same
CN101800219B (en) 2009-02-09 2019-09-17 晶元光电股份有限公司 Light-emitting component
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
TWI422075B (en) * 2009-03-13 2014-01-01 Advanced Optoelectronic Tech A method for forming a filp chip structure of semiconductor optoelectronic device and fabricated thereof
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
WO2010146783A1 (en) * 2009-06-15 2010-12-23 パナソニック株式会社 Semiconductor light-emitting device, light-emitting module, and illumination device
KR101060762B1 (en) * 2009-07-15 2011-08-31 삼성엘이디 주식회사 Manufacturing method of light emitting device
TW201106499A (en) * 2009-08-03 2011-02-16 Forward Electronics Co Ltd High-efficiency light emitting diode
US8076689B2 (en) * 2009-08-13 2011-12-13 Ray-Hua Horng Light emitting diode
US7713776B1 (en) * 2009-08-13 2010-05-11 Ray-Hua Horng Method of making a light emitting diode
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
WO2011035265A1 (en) 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
KR101081166B1 (en) * 2009-09-23 2011-11-07 엘지이노텍 주식회사 Light emitting device, method for fabricating the same and light emitting device package
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
TW201116753A (en) * 2009-09-30 2011-05-16 Ceram Tec Gmbh Lamp having a variable substrate as a base for a light source
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
TWI581398B (en) * 2009-10-19 2017-05-01 晶元光電股份有限公司 Light-emitting device
US9324691B2 (en) 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
TWI533474B (en) * 2009-10-20 2016-05-11 晶元光電股份有限公司 Optoelectronic device
KR101020998B1 (en) * 2009-11-12 2011-03-09 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
JP5623062B2 (en) 2009-11-13 2014-11-12 シャープ株式会社 Light emitting device and manufacturing method thereof
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
KR101712543B1 (en) * 2010-02-12 2017-03-07 서울바이오시스 주식회사 Light emitting diode chip having distributed bragg reflector and method of fabricating the same
TWI397989B (en) * 2009-12-07 2013-06-01 Epistar Corp Light emitting element array
KR101103892B1 (en) * 2009-12-08 2012-01-12 엘지이노텍 주식회사 Light emitting device and light emitting device package
TWI414088B (en) * 2009-12-16 2013-11-01 Epistar Corp Light-emitting device and the manufacturing method thereof
TWI499099B (en) 2009-12-30 2015-09-01 Epistar Corp A semiconductor light-emitting device with a protection layer
JP2011151268A (en) 2010-01-22 2011-08-04 Sharp Corp Light-emitting device
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
KR101665932B1 (en) * 2010-02-27 2016-10-13 삼성전자주식회사 Semiconductor light emitting device having a multi-cell array, light emitting module and illumination apparatus
JP5197654B2 (en) 2010-03-09 2013-05-15 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
US8273589B2 (en) 2010-03-19 2012-09-25 Micron Technology, Inc. Light emitting diodes and methods for manufacturing light emitting diodes
CN102214776B (en) * 2010-04-09 2013-05-01 亿广科技(上海)有限公司 Light emitting diode package, lighting device and light emitting diode package substrate
US8492777B2 (en) 2010-04-09 2013-07-23 Everlight Electronics Co., Ltd. Light emitting diode package, lighting device and light emitting diode package substrate
KR101125335B1 (en) * 2010-04-15 2012-03-27 엘지이노텍 주식회사 Light emitting device, fabrication method of semiconductor light emitting device, and light emitting device package
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US20120007102A1 (en) * 2010-07-08 2012-01-12 Soraa, Inc. High Voltage Device and Method for Optical Devices
KR101735670B1 (en) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 A light emitting device
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
CN102339940A (en) * 2010-07-27 2012-02-01 展晶科技(深圳)有限公司 Encapsulation structure of light-emitting diode (LED) and manufacturing method thereof
US9287452B2 (en) * 2010-08-09 2016-03-15 Micron Technology, Inc. Solid state lighting devices with dielectric insulation and methods of manufacturing
JP5612991B2 (en) 2010-09-30 2014-10-22 シャープ株式会社 LIGHT EMITTING DEVICE AND LIGHTING DEVICE HAVING THE SAME
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
TWI476965B (en) * 2010-10-22 2015-03-11 Advanced Optoelectronic Tech Light-emitting diode package
CN102097562A (en) * 2010-12-14 2011-06-15 金木子 Alternating current surface mounted type vertical structure semiconductor light-emitting diode
US8530909B2 (en) * 2010-12-27 2013-09-10 Micron Technology, Inc. Array assemblies with high voltage solid state lighting dies
KR20120075946A (en) * 2010-12-29 2012-07-09 서울반도체 주식회사 Light emitting module having a wafer with a power supply integrated
KR101748334B1 (en) * 2011-01-17 2017-06-16 삼성전자 주식회사 Apparatus and method of fabricating white light emitting device
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8536594B2 (en) * 2011-01-28 2013-09-17 Micron Technology, Inc. Solid state lighting devices with reduced dimensions and methods of manufacturing
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
JP5715686B2 (en) * 2011-03-23 2015-05-13 創光科学株式会社 Nitride semiconductor ultraviolet light emitting device
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US20130196539A1 (en) * 2012-01-12 2013-08-01 John Mezzalingua Associates, Inc. Electronics Packaging Assembly with Dielectric Cover
JP2015509669A (en) 2012-03-06 2015-03-30 ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． Light emitting diode with low refractive index material layer to reduce guided light effect
KR20130102746A (en) * 2012-03-08 2013-09-23 삼성전자주식회사 Method for manufacturing light emitting device
JP2015516682A (en) * 2012-04-11 2015-06-11 株式会社東芝 Light emitting device having shielded silicon substrate
WO2013168365A1 (en) * 2012-05-09 2013-11-14 パナソニック株式会社 Light-emitting device
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US8974077B2 (en) 2012-07-30 2015-03-10 Ultravision Technologies, Llc Heat sink for LED light source
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
KR101892213B1 (en) * 2012-08-07 2018-08-28 서울바이오시스 주식회사 Light emitting diode array on wafer level and method of forming the same
WO2014025195A1 (en) * 2012-08-07 2014-02-13 서울바이오시스 주식회사 Wafer level light-emitting diode array and method for manufacturing same
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
KR101367918B1 (en) * 2012-09-24 2014-02-28 (주)라이타이저코리아 Package for light emitting device
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US9257481B2 (en) * 2012-11-26 2016-02-09 Epistar Corporation LED arrray including light-guiding structure
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
CN106910758B (en) * 2013-01-09 2020-05-15 新世纪光电股份有限公司 Light emitting device
CN105144345B (en) 2013-03-15 2018-05-08 晶体公司 With the counterfeit plane contact with electronics and photoelectric device
US9257511B2 (en) * 2013-03-26 2016-02-09 Infineon Technologies Ag Silicon carbide device and a method for forming a silicon carbide device
US9035322B2 (en) 2013-03-26 2015-05-19 Infineon Technologies Ag Silicon carbide device and a method for manufacturing a silicon carbide device
US9397265B2 (en) * 2013-04-15 2016-07-19 Nthdegree Technologies Worldwide Inc. Layered conductive phosphor electrode for vertical LED and method for forming same
WO2014175564A1 (en) * 2013-04-22 2014-10-30 한국산업기술대학교산학협력단 Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode
TWI514621B (en) * 2013-06-14 2015-12-21 Lextar Electronics Corp Light emitting diode structure
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US10283681B2 (en) * 2013-09-12 2019-05-07 Cree, Inc. Phosphor-converted light emitting device
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
TWI632692B (en) * 2013-11-18 2018-08-11 晶元光電股份有限公司 Semiconductor light-emitting device
CN109585620B (en) * 2013-11-18 2022-07-01 晶元光电股份有限公司 Light emitting device and method for manufacturing the same
US20150179873A1 (en) * 2013-12-20 2015-06-25 Palo Alto Research Center Incorporated Small-sized light-emitting diode chiplets and method of fabrication thereof
KR102135921B1 (en) * 2013-12-27 2020-07-20 엘지디스플레이 주식회사 Flexible Printed Circuit And Display Device Using The Same
US9195281B2 (en) 2013-12-31 2015-11-24 Ultravision Technologies, Llc System and method for a modular multi-panel display
USD741822S1 (en) * 2014-05-28 2015-10-27 Epistar Corporation Light-emitting diode array
KR102145208B1 (en) 2014-06-10 2020-08-19 삼성전자주식회사 Manufacturing method of light emitting device package
US10367126B2 (en) * 2014-07-18 2019-07-30 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light-emitting device
JP2016081562A (en) 2014-10-09 2016-05-16 ソニー株式会社 Display apparatus, manufacturing method of the same, and electronic apparatus
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
US10529897B2 (en) * 2015-03-06 2020-01-07 Koninklijke Philips N.V. LED-based lighting device with asymmetrically distributed LED chips
CN107431114B (en) * 2015-03-06 2020-05-22 住友大阪水泥股份有限公司 Composition for forming light-scattering composite, and method for producing same
KR102357188B1 (en) 2015-07-21 2022-01-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device
TWI552385B (en) * 2015-09-04 2016-10-01 錼創科技股份有限公司 Light emitting device
US10170455B2 (en) 2015-09-04 2019-01-01 PlayNitride Inc. Light emitting device with buffer pads
CN105428498B (en) * 2015-11-20 2017-03-15 福建中科芯源光电科技有限公司 High Density Integration COB white light sources and preparation method thereof
TWI614887B (en) * 2016-02-26 2018-02-11 Wafer-level microdisplay with dot matrix light emitting diode light source and manufacturing method thereof
US11239394B2 (en) * 2016-03-18 2022-02-01 Lg Innotek Co., Ltd. Semiconductor device and display device including the same
TWI640109B (en) * 2016-08-11 2018-11-01 億光電子工業股份有限公司 Display device
US10818823B2 (en) 2016-08-26 2020-10-27 Stanley Electric Co., Ltd. Group III nitride semiconductor light-emitting element and wafer including such element configuration
US10665759B2 (en) * 2016-09-27 2020-05-26 Lumileds Llc Reflective structure for light emitting devices
KR101798134B1 (en) 2016-10-14 2017-11-16 서울바이오시스 주식회사 Light emitting diode array on wafer level and method of forming the same
KR20180071743A (en) * 2016-12-20 2018-06-28 엘지디스플레이 주식회사 Light emitting diode chip and light emitting diode display apparatus comprising the same
WO2018116814A1 (en) 2016-12-22 2018-06-28 シャープ株式会社 Display device and manufacturing method
TWI607558B (en) * 2017-01-10 2017-12-01 錼創科技股份有限公司 Micro light-emitting diode chip
JP6645486B2 (en) * 2017-02-13 2020-02-14 日亜化学工業株式会社 Light emitting device and method of manufacturing the same
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
JP6799710B2 (en) * 2017-08-02 2020-12-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Light emitting device including light emitting units arranged in a tessellation pattern
TWI630729B (en) * 2017-08-28 2018-07-21 友達光電股份有限公司 Light emitting device
KR102475924B1 (en) 2017-08-31 2022-12-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device and head lamp including the same
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
TWI779242B (en) * 2019-10-28 2022-10-01 錼創顯示科技股份有限公司 Micro light-emitting diode device
CN113108245A (en) * 2020-01-09 2021-07-13 致伸科技股份有限公司 Light source module and electronic device thereof
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11538849B2 (en) * 2020-05-28 2022-12-27 X Display Company Technology Limited Multi-LED structures with reduced circuitry
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
JP2022152676A (en) * 2021-03-29 2022-10-12 沖電気工業株式会社 Semiconductor element unit, semiconductor element unit manufacturing method, semiconductor element unit supply substrate, semiconductor mounted circuit, and semiconductor mounted circuit manufacturing method
CN114188453A (en) * 2021-11-30 2022-03-15 重庆康佳光电技术研究院有限公司 Vertical LED chip, preparation method thereof, LED array and display panel
US20230197866A1 (en) * 2021-12-16 2023-06-22 Attollo Engineering, LLC Electron-photon barrier in photodetectors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4422660A1 (en) 1993-06-30 1995-02-09 Mitsubishi Chem Ind Light emitting device
JPH10270801A (en) 1997-03-25 1998-10-09 Sharp Corp Nitride iii-v compound semiconductor light emitting device and its manufacture
DE10039435A1 (en) 2000-08-11 2002-02-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component used as an illuminating diode or semiconductor laser comprises an active layer, a contact surface and a cylindrical semiconductor body
EP1198016A2 (en) 2000-10-13 2002-04-17 LumiLeds Lighting U.S., LLC Stenciling phosphor layers on light emitting diodes
JP3399440B2 (en) 1999-04-26 2003-04-21 松下電器産業株式会社 Composite light emitting element, light emitting device and method of manufacturing the same

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2426990A (en) 1943-09-03 1947-09-09 Sylvania Electric Prod Header for electron tubes and the like and method of manufacture
US3297863A (en) 1964-08-17 1967-01-10 Robbiano Francesco Projector for motor vehicles
JPH0388422A (en) 1989-08-30 1991-04-12 Oki Electric Ind Co Ltd Synchronizing counter
JPH0730153A (en) 1993-07-14 1995-01-31 Hitachi Cable Ltd Light-emitting diode chip, its pedestal and light-emitting diode
JPH07111339A (en) 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd Surface emission type semiconductor light emitting device
JP2935402B2 (en) 1993-12-22 1999-08-16 京セラ株式会社 Imaging device
JPH0883929A (en) 1994-09-14 1996-03-26 Rohm Co Ltd Semiconductor light emitting element and manufacture thereof
JPH08139412A (en) 1994-11-07 1996-05-31 Mitsubishi Electric Corp Semiconductor laser device
JP3825475B2 (en) * 1995-06-30 2006-09-27 株式会社 東芝 Manufacturing method of electronic parts
US6600175B1 (en) * 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
WO1997048138A2 (en) 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
JPH10134718A (en) 1996-10-28 1998-05-22 Hitachi Lighting Ltd Manufacture of annular fluorescent lamp
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6183100B1 (en) 1997-10-17 2001-02-06 Truck-Lite Co., Inc. Light emitting diode 360° warning lamp
JP3505374B2 (en) 1997-11-14 2004-03-08 三洋電機株式会社 Light emitting components
JP3641122B2 (en) 1997-12-26 2005-04-20 ローム株式会社 Semiconductor light emitting device, semiconductor light emitting module, and manufacturing method thereof
JPH11251627A (en) 1998-03-02 1999-09-17 Daido Steel Co Ltd Manufacture of current strangulated light emitting diode
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP3088422B2 (en) 1998-09-04 2000-09-18 三星電子株式会社 Air circulation system for wet electrophotographic printer
JP2000091628A (en) 1998-09-09 2000-03-31 Murata Mfg Co Ltd Semiconductor light emitting element
US6373188B1 (en) 1998-12-22 2002-04-16 Honeywell International Inc. Efficient solid-state light emitting device with excited phosphors for producing a visible light output
JP2000208822A (en) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp Semiconductor light-emitting device
JP2001015814A (en) 1999-06-30 2001-01-19 Kyocera Corp Substrate for mounting optical component, manufacture therefor and optical module
US6639354B1 (en) * 1999-07-23 2003-10-28 Sony Corporation Light emitting device, production method thereof, and light emitting apparatus and display unit using the same
US6696703B2 (en) * 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
DE10010638A1 (en) 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Making light emitting semiconducting body with luminescence conversion element involves applying suspension with solvent, adhesive, luminescent material
US7320593B2 (en) 2000-03-08 2008-01-22 Tir Systems Ltd. Light emitting diode light source for curing dental composites
DE10017336C2 (en) * 2000-04-07 2002-05-16 Vishay Semiconductor Gmbh Process for the production of radiation-emitting semiconductor wafers
JP2001298216A (en) 2000-04-12 2001-10-26 Matsushita Electric Ind Co Ltd Surface-mounting semiconductor light-emitting device
JP2002009349A (en) 2000-06-26 2002-01-11 Koha Co Ltd Surface emission led and its manufacturing method
JP3882539B2 (en) 2000-07-18 2007-02-21 ソニー株式会社 Semiconductor light emitting device, method for manufacturing the same, and image display device
DE10036940A1 (en) * 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Luminescence conversion LED
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP2002076435A (en) 2000-09-05 2002-03-15 Mitsubishi Cable Ind Ltd Semiconductor light emitting element
JP2002176201A (en) 2000-12-05 2002-06-21 Okaya Electric Ind Co Ltd Semiconductor light emitting element
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6737293B2 (en) * 2001-02-07 2004-05-18 Agfa-Gevaert Manufacturing of a thin film inorganic light emitting diode
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP3891115B2 (en) * 2001-04-17 2007-03-14 日亜化学工業株式会社 Light emitting device
JP4380083B2 (en) 2001-05-14 2009-12-09 日立電線株式会社 Manufacturing method of light emitting diode
JP3912044B2 (en) * 2001-06-06 2007-05-09 豊田合成株式会社 Method for manufacturing group III nitride compound semiconductor light emitting device
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6759797B2 (en) 2001-06-15 2004-07-06 General Electric Company Compact fluorescent lamp
JP2003031840A (en) * 2001-07-11 2003-01-31 Hitachi Cable Ltd Light emitting diode array
US6744075B2 (en) * 2001-09-17 2004-06-01 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of forming the same
EP1437776B1 (en) 2001-10-12 2011-09-21 Nichia Corporation Light emitting device and method for manufacture thereof
EP1460694A1 (en) 2001-11-19 2004-09-22 Sanyo Electric Co., Ltd. Compound semiconductor light emitting device and its manufacturing method
WO2003058726A1 (en) * 2001-12-28 2003-07-17 Sanken Electric Co., Ltd. Semiconductor light-emitting device, light-emitting display, method for manufacturing semiconductor light-emitting device, and method for manufacturing light-emitting display
JP3960053B2 (en) 2002-01-18 2007-08-15 松下電器産業株式会社 Semiconductor light emitting device and light emitting device for illumination using the same
EP1471583B1 (en) * 2002-01-28 2009-10-07 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method
JP3801931B2 (en) 2002-03-05 2006-07-26 ローム株式会社 Structure and manufacturing method of light emitting device using LED chip
KR100491968B1 (en) * 2002-03-25 2005-05-27 학교법인 포항공과대학교 Fabrication method of P-type ohmic electrode in gallium nitride based optical device
KR101030068B1 (en) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 Method of Manufacturing Nitride Semiconductor Device and Nitride Semiconductor Device
KR101095753B1 (en) 2002-08-01 2011-12-21 니치아 카가쿠 고교 가부시키가이샤 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
DE60336252D1 (en) * 2002-08-29 2011-04-14 Seoul Semiconductor Co Ltd LIGHT-EMITTING COMPONENT WITH LIGHT-EMITTING DIODES
TWI228323B (en) 2002-09-06 2005-02-21 Sony Corp Semiconductor light emitting device and its manufacturing method, integrated semiconductor light emitting device and manufacturing method thereof, image display device and its manufacturing method, illumination device and manufacturing method thereof
KR100506730B1 (en) * 2002-12-10 2005-08-08 삼성전기주식회사 Method of fabricating light emitting diode
JP2004273746A (en) * 2003-03-07 2004-09-30 Hitachi Cable Ltd Light-emitting diode array
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7473934B2 (en) * 2003-07-30 2009-01-06 Panasonic Corporation Semiconductor light emitting device, light emitting module and lighting apparatus
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
JP4116960B2 (en) 2003-09-30 2008-07-09 松下電器産業株式会社 Semiconductor light emitting device, light emitting module, lighting device, and method for manufacturing semiconductor light emitting device
US7675075B2 (en) 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7019330B2 (en) * 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
US7025168B2 (en) * 2004-04-16 2006-04-11 Deere & Company Steering cylinder shield
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4422660A1 (en) 1993-06-30 1995-02-09 Mitsubishi Chem Ind Light emitting device
JPH10270801A (en) 1997-03-25 1998-10-09 Sharp Corp Nitride iii-v compound semiconductor light emitting device and its manufacture
JP3399440B2 (en) 1999-04-26 2003-04-21 松下電器産業株式会社 Composite light emitting element, light emitting device and method of manufacturing the same
DE10039435A1 (en) 2000-08-11 2002-02-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component used as an illuminating diode or semiconductor laser comprises an active layer, a contact surface and a cylindrical semiconductor body
EP1198016A2 (en) 2000-10-13 2002-04-17 LumiLeds Lighting U.S., LLC Stenciling phosphor layers on light emitting diodes

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005062389A3 (en) * 2003-12-24 2006-02-09 Matsushita Electric Ind Co Ltd Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
US7755095B2 (en) 2003-12-24 2010-07-13 Panasonic Corporation Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
US7880185B2 (en) 2003-12-24 2011-02-01 Panasonic Corporation Semiconductor light emitting device with a substrate having a cross sectional trapezoidal shape and an oblique surface
EP1864339A4 (en) * 2005-03-11 2010-12-29 Seoul Semiconductor Co Ltd Led package having an array of light emitting cells coupled in series
US20070172987A1 (en) * 2005-06-14 2007-07-26 Roger Dugas Membrane-based chip tooling
US10340239B2 (en) 2005-06-14 2019-07-02 Cufer Asset Ltd. L.L.C Tooling for coupling multiple electronic chips
US9754907B2 (en) 2005-06-14 2017-09-05 Cufer Asset Ltd. L.L.C. Tooling for coupling multiple electronic chips
US8846445B2 (en) 2005-06-14 2014-09-30 Cufer Asset Ltd. L.L.C. Inverse chip connector
US9324629B2 (en) * 2005-06-14 2016-04-26 Cufer Asset Ltd. L.L.C. Tooling for coupling multiple electronic chips
US9147635B2 (en) 2005-06-14 2015-09-29 Cufer Asset Ltd. L.L.C. Contact-based encapsulation
US9099574B2 (en) 2005-09-30 2015-08-04 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing it
US9502617B2 (en) 2006-02-23 2016-11-22 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
US7956378B2 (en) * 2006-02-23 2011-06-07 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
US9029903B2 (en) 2006-02-23 2015-05-12 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
US8115214B2 (en) * 2006-02-23 2012-02-14 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
US8471271B2 (en) 2006-02-23 2013-06-25 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
EP1995794A4 (en) * 2006-03-10 2011-08-31 Panasonic Elec Works Co Ltd Light-emitting device
US8097887B2 (en) 2006-03-30 2012-01-17 Sumitomo Chemical Company, Limited Light emitting device having a monotone decreasing function
US7955531B1 (en) 2006-04-26 2011-06-07 Rohm And Haas Electronic Materials Llc Patterned light extraction sheet and method of making same
US7521727B2 (en) 2006-04-26 2009-04-21 Rohm And Haas Company Light emitting device having improved light extraction efficiency and method of making same
EP1995780B1 (en) * 2007-05-24 2017-08-02 Stanley Electric Co., Ltd. Semiconductor light emitting apparatus
US9054282B2 (en) 2007-08-07 2015-06-09 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same
EP2201616A2 (en) * 2007-10-15 2010-06-30 LG Innotek Co., Ltd. Light emitting device and method for fabricating the same
EP2201616A4 (en) * 2007-10-15 2011-01-19 Lg Innotek Co Ltd Light emitting device and method for fabricating the same
US8299477B2 (en) 2007-10-15 2012-10-30 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
US9893118B2 (en) 2007-10-15 2018-02-13 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
US8338838B2 (en) 2007-12-28 2012-12-25 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
EP2232596A2 (en) * 2007-12-28 2010-09-29 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
EP2232596A4 (en) * 2007-12-28 2011-03-02 3M Innovative Properties Co Down-converted light source with uniform wavelength emission
WO2010033299A1 (en) * 2008-09-16 2010-03-25 Osram Sylvania Inc. Lighting module
US8022626B2 (en) 2008-09-16 2011-09-20 Osram Sylvania Inc. Lighting module
US8183585B2 (en) 2008-09-16 2012-05-22 Osram Sylvania Inc. Lighting module
US8188486B2 (en) 2008-09-16 2012-05-29 Osram Sylvania Inc. Optical disk for lighting module
CN102129138A (en) * 2010-01-15 2011-07-20 Lg伊诺特有限公司 Image display apparatus and method of manufacturing the same
US8829540B2 (en) 2010-02-19 2014-09-09 Samsung Electronics Co., Ltd. Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus
EP2365527A3 (en) * 2010-02-19 2014-01-29 Samsung Electronics Co., Ltd. Semiconductor light emitting device having multi-cell attray, light emitting module, and illumination apparatus
US8598619B2 (en) 2010-02-26 2013-12-03 Samsung Electronics Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
US8637897B2 (en) 2010-02-26 2014-01-28 Samsung Electronics Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
EP2843705A1 (en) * 2013-08-30 2015-03-04 LG Innotek Co., Ltd. Light emitting device package and lighting device for vehicle including the same
US9269861B2 (en) 2013-08-30 2016-02-23 Lg Innotek Co., Ltd. Light emitting device package and lighting device for vehicle including the same
AT516416A1 (en) * 2014-10-21 2016-05-15 Zizala Lichtsysteme Gmbh Printed circuit board having a plurality of arranged on the circuit board in at least one group of electronic components
US10139066B2 (en) 2014-10-21 2018-11-27 Zkw Group Gmbh Printed circuit board having a plurality of electronic components arranged on the printed circuit board in at least one group
AT516416B1 (en) * 2014-10-21 2019-12-15 Zkw Group Gmbh Printed circuit board with a plurality of electronic components arranged on the printed circuit board in at least one group
CN107634081A (en) * 2016-07-15 2018-01-26 三星显示有限公司 Light-emitting device and its manufacture method
CN107634081B (en) * 2016-07-15 2023-06-20 三星显示有限公司 Light emitting device and method of manufacturing the same
FR3055944A1 (en) * 2016-09-15 2018-03-16 Valeo Vision LUMINOUS CONVERSION FOR A HIGH RESOLUTION LIGHT SOURCE
US11444228B2 (en) 2017-11-20 2022-09-13 Sony Corporation Light emitting device and display apparatus
CN108346675A (en) * 2017-12-28 2018-07-31 海迪科（南通）光电科技有限公司 Light-emitting diode LED or laser diode LD array device and preparation method thereof
US11422296B2 (en) 2018-04-19 2022-08-23 Lextar Electronics Corporation Light-emitting module structure
US10908344B2 (en) 2018-04-19 2021-02-02 Lextar Electronics Corporation Light-emitting module structure

Also Published As

Publication number Publication date
US7675075B2 (en) 2010-03-09
US20060284195A1 (en) 2006-12-21
US20130119422A1 (en) 2013-05-16
EP1658642B1 (en) 2014-02-26
TW200514281A (en) 2005-04-16
WO2005022654A3 (en) 2005-06-09
US8207548B2 (en) 2012-06-26
TWI384637B (en) 2013-02-01
US8324632B2 (en) 2012-12-04
US8692285B2 (en) 2014-04-08
US20080149945A1 (en) 2008-06-26
US20100078657A1 (en) 2010-04-01
EP1658642A2 (en) 2006-05-24

Similar Documents

Publication Publication Date Title
EP1658642B1 (en) Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7880185B2 (en) Semiconductor light emitting device with a substrate having a cross sectional trapezoidal shape and an oblique surface
US7956368B2 (en) Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device
US7473934B2 (en) Semiconductor light emitting device, light emitting module and lighting apparatus
JP4805831B2 (en) Semiconductor light emitting device, lighting module, lighting device, surface mount component, and display device
US7420221B2 (en) Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device
JP4160881B2 (en) Semiconductor light emitting device, light emitting module, lighting device, and method for manufacturing semiconductor light emitting device
US20080036362A1 (en) Light-Emitting Device, Light-Emitting Module, Display Unit, Lighting Unit and Method for Manufacturing Light-Emitting Device
JP2005252222A (en) Semiconductor light-emitting device, lighting module, lighting device, display device, and method of manufacturing semiconductor light-emitting device
JP2005109113A (en) Semiconductor light-emitting device, method for manufacturing the same light-emitting module, and lighting system
JP5346909B2 (en) Semiconductor light emitting device, lighting module, lighting device, and display element
JP2006196572A (en) Light emitting diode and its manufacturing method

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2006284195

Country of ref document: US

Ref document number: 10567510

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2004748309

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2004748309

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 10567510

Country of ref document: US