WO2005038881A3 - Short-channel transistors - Google Patents

Short-channel transistors Download PDF

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Publication number
WO2005038881A3
WO2005038881A3 PCT/GB2004/004405 GB2004004405W WO2005038881A3 WO 2005038881 A3 WO2005038881 A3 WO 2005038881A3 GB 2004004405 W GB2004004405 W GB 2004004405W WO 2005038881 A3 WO2005038881 A3 WO 2005038881A3
Authority
WO
WIPO (PCT)
Prior art keywords
source
insulating layer
short
channel transistors
drain electrode
Prior art date
Application number
PCT/GB2004/004405
Other languages
French (fr)
Other versions
WO2005038881A2 (en
Inventor
Henning Sirringhaus
Jizheng Wang
Original Assignee
Univ Cambridge Tech
Henning Sirringhaus
Jizheng Wang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Cambridge Tech, Henning Sirringhaus, Jizheng Wang filed Critical Univ Cambridge Tech
Priority to EP04768933A priority Critical patent/EP1673799A2/en
Priority to US10/576,246 priority patent/US20070018151A1/en
Publication of WO2005038881A2 publication Critical patent/WO2005038881A2/en
Publication of WO2005038881A3 publication Critical patent/WO2005038881A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Abstract

An electronic switching device comprising a source electrode, a drain electrode, an insulating layer in the region between source and drain electrode, a semiconducting layer in contact with both the source and the drain electrode, and in contact with said insulating layer, wherein the smallest distance between said source and drain electrodes is less than 1 µm, and wherein the shape of the insulating layer is such that the path of smallest distance between the source-and drain electrodes intersects through a region of said insulating layer, so as to reduce the OFF current of the electronic switching device.
PCT/GB2004/004405 2003-10-16 2004-10-18 Short-channel transistors WO2005038881A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04768933A EP1673799A2 (en) 2003-10-16 2004-10-18 Short-channel transistors
US10/576,246 US20070018151A1 (en) 2003-10-16 2004-10-18 Short-channel transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0324189.0A GB0324189D0 (en) 2003-10-16 2003-10-16 Short-channel transistors
GB0324189.0 2003-10-16

Publications (2)

Publication Number Publication Date
WO2005038881A2 WO2005038881A2 (en) 2005-04-28
WO2005038881A3 true WO2005038881A3 (en) 2005-11-03

Family

ID=29559368

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2004/004405 WO2005038881A2 (en) 2003-10-16 2004-10-18 Short-channel transistors

Country Status (4)

Country Link
US (1) US20070018151A1 (en)
EP (1) EP1673799A2 (en)
GB (1) GB0324189D0 (en)
WO (1) WO2005038881A2 (en)

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* Cited by examiner, † Cited by third party
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JP4502382B2 (en) * 2004-11-02 2010-07-14 キヤノン株式会社 Organic transistor
JP4865999B2 (en) * 2004-11-19 2012-02-01 株式会社日立製作所 Method for manufacturing field effect transistor
JP4506605B2 (en) * 2005-07-28 2010-07-21 ソニー株式会社 Manufacturing method of semiconductor device
US20070040165A1 (en) 2005-08-16 2007-02-22 Klaus Dimmler Method of fabricating organic FETs
JP4996846B2 (en) * 2005-11-22 2012-08-08 株式会社日立製作所 Field effect transistor and manufacturing method thereof
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
JP5066848B2 (en) * 2006-02-10 2012-11-07 コニカミノルタホールディングス株式会社 Thin film transistor manufacturing method
US20090116275A1 (en) * 2006-04-28 2009-05-07 Leenders Luc Conventionally printable non-volatile passive memory element and method of making thereof
KR101299699B1 (en) * 2006-12-15 2013-08-28 엘지디스플레이 주식회사 Plane Display Panel and Method for Fabricating Thereof using the Thin Film Transistor
GB0706653D0 (en) 2007-04-04 2007-05-16 Cambridge Display Tech Ltd Organic thin film transistors
KR20100016643A (en) * 2007-04-19 2010-02-12 바스프 에스이 Method for forming a pattern on a substrate and electronic device formed thereby
KR101367129B1 (en) 2008-07-08 2014-02-25 삼성전자주식회사 Thin film transistor and method of manufacturing the same
CN101740631B (en) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the semiconductor device
GB0913456D0 (en) * 2009-08-03 2009-09-16 Cambridge Entpr Ltd Printed electronic device
DE102011085114B4 (en) 2011-10-24 2016-02-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thin film transistor
US10398128B2 (en) * 2014-04-30 2019-09-03 Larry Green Automated animal feed dispenser and method
CN110085604B (en) * 2019-04-30 2021-04-23 Tcl华星光电技术有限公司 TFT array substrate and manufacturing method thereof
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation

Citations (6)

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US6008505A (en) * 1997-07-25 1999-12-28 Lg Semicon Co., Ltd. Thin film transistor and method for fabricating the same
WO2001035500A2 (en) * 1999-11-12 2001-05-17 The University Of Liverpool Field effect transistor (fet) and fet circuitry
WO2001047045A1 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Solution processing
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US20020173083A1 (en) * 2001-01-03 2002-11-21 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
DE10153656A1 (en) * 2001-10-31 2003-05-22 Infineon Technologies Ag Process for reducing the contact resistance in organic field effect transistors by applying a reactive intermediate layer that doses the organic semiconductor layer in the contact region in a regio-selective manner

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KR950007358B1 (en) * 1992-07-01 1995-07-10 현대전자산업주식회사 Making method of tft with trench surrounding gate structure
US5641974A (en) * 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
GB2358081B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp A thin-film transistor and a method for maufacturing thereof
KR100710282B1 (en) * 2000-12-29 2007-04-23 엘지.필립스 엘시디 주식회사 Thin Film Transistor and Fabricating Method Thereof
GB2379083A (en) * 2001-08-20 2003-02-26 Seiko Epson Corp Inkjet printing on a substrate using two immiscible liquids
US20030155572A1 (en) * 2002-02-19 2003-08-21 Min-Koo Han Thin film transistor and method for manufacturing thereof
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
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Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US6008505A (en) * 1997-07-25 1999-12-28 Lg Semicon Co., Ltd. Thin film transistor and method for fabricating the same
WO2001035500A2 (en) * 1999-11-12 2001-05-17 The University Of Liverpool Field effect transistor (fet) and fet circuitry
WO2001047045A1 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Solution processing
US20020173083A1 (en) * 2001-01-03 2002-11-21 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
DE10153656A1 (en) * 2001-10-31 2003-05-22 Infineon Technologies Ag Process for reducing the contact resistance in organic field effect transistors by applying a reactive intermediate layer that doses the organic semiconductor layer in the contact region in a regio-selective manner

Also Published As

Publication number Publication date
EP1673799A2 (en) 2006-06-28
GB0324189D0 (en) 2003-11-19
WO2005038881A2 (en) 2005-04-28
US20070018151A1 (en) 2007-01-25

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