WO2005038883A3 - Manufacturing method of a ferroelectric capacitor - Google Patents

Manufacturing method of a ferroelectric capacitor Download PDF

Info

Publication number
WO2005038883A3
WO2005038883A3 PCT/JP2004/014284 JP2004014284W WO2005038883A3 WO 2005038883 A3 WO2005038883 A3 WO 2005038883A3 JP 2004014284 W JP2004014284 W JP 2004014284W WO 2005038883 A3 WO2005038883 A3 WO 2005038883A3
Authority
WO
WIPO (PCT)
Prior art keywords
film
forming
manufacturing
ferroelectric capacitor
hole
Prior art date
Application number
PCT/JP2004/014284
Other languages
French (fr)
Other versions
WO2005038883A2 (en
Inventor
Keitaro Imai
Koji Yamakawa
Hiroshi Itokawa
Katsuaki Natori
Osamu Arisumi
Keisuke Nakazawa
Bum-Ki Moon
Original Assignee
Toshiba Kk
Infineon Technologies Ag
Keitaro Imai
Koji Yamakawa
Hiroshi Itokawa
Katsuaki Natori
Osamu Arisumi
Keisuke Nakazawa
Bum-Ki Moon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk, Infineon Technologies Ag, Keitaro Imai, Koji Yamakawa, Hiroshi Itokawa, Katsuaki Natori, Osamu Arisumi, Keisuke Nakazawa, Bum-Ki Moon filed Critical Toshiba Kk
Publication of WO2005038883A2 publication Critical patent/WO2005038883A2/en
Publication of WO2005038883A3 publication Critical patent/WO2005038883A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film (108) on a semiconductor substrate (100) , forming an alumina film (117) on the underlying region, forming a hole (117a) in the alumina film (117) , filling the hole (117a) with a bottom electrode film (118, 119) , forming a dielectric film (121) on the bottom electrode film (118, 119) , and forming a top electrode film (122) on the dielectric film (121) .
PCT/JP2004/014284 2003-09-24 2004-09-22 Manufacturing method of a ferroelectric capacitor WO2005038883A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-332038 2003-09-24
JP2003332038A JP2005101213A (en) 2003-09-24 2003-09-24 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
WO2005038883A2 WO2005038883A2 (en) 2005-04-28
WO2005038883A3 true WO2005038883A3 (en) 2005-06-16

Family

ID=34460508

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/014284 WO2005038883A2 (en) 2003-09-24 2004-09-22 Manufacturing method of a ferroelectric capacitor

Country Status (2)

Country Link
JP (1) JP2005101213A (en)
WO (1) WO2005038883A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416042A (en) * 1994-06-09 1995-05-16 International Business Machines Corporation Method of fabricating storage capacitors using high dielectric constant materials
US5452178A (en) * 1993-09-22 1995-09-19 Northern Telecom Limited Structure and method of making a capacitor for an intergrated circuit
US5739563A (en) * 1995-03-15 1998-04-14 Kabushiki Kaisha Toshiba Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same
US6184927B1 (en) * 1997-12-30 2001-02-06 Hyundai Electronics Industries Co., Ltd. Methods of forming ferroelectric capacitors having a diffusion barrier layer
US20010044179A1 (en) * 1999-03-30 2001-11-22 Jin-Won Kim Method for manufacturing a capacitor
US20010053058A1 (en) * 2000-06-19 2001-12-20 Kim You Sung High dielectric capacitor and method of manufacturing the same
US6346741B1 (en) * 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US20020055191A1 (en) * 2000-11-08 2002-05-09 Sanyo Electric Co.,Ltd. Dielectric element including oxide-based dielectric film and method of fabricating the same
US20020197744A1 (en) * 2001-06-21 2002-12-26 Kyu-Mann Lee Ferroelectric memory devices using a ferroelectric planarization layer and fabrication methods
EP1289017A2 (en) * 2001-08-28 2003-03-05 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method for manufacturing the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452178A (en) * 1993-09-22 1995-09-19 Northern Telecom Limited Structure and method of making a capacitor for an intergrated circuit
US5416042A (en) * 1994-06-09 1995-05-16 International Business Machines Corporation Method of fabricating storage capacitors using high dielectric constant materials
US5739563A (en) * 1995-03-15 1998-04-14 Kabushiki Kaisha Toshiba Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same
US6346741B1 (en) * 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US6184927B1 (en) * 1997-12-30 2001-02-06 Hyundai Electronics Industries Co., Ltd. Methods of forming ferroelectric capacitors having a diffusion barrier layer
US20010044179A1 (en) * 1999-03-30 2001-11-22 Jin-Won Kim Method for manufacturing a capacitor
US20010053058A1 (en) * 2000-06-19 2001-12-20 Kim You Sung High dielectric capacitor and method of manufacturing the same
US20020055191A1 (en) * 2000-11-08 2002-05-09 Sanyo Electric Co.,Ltd. Dielectric element including oxide-based dielectric film and method of fabricating the same
US20020197744A1 (en) * 2001-06-21 2002-12-26 Kyu-Mann Lee Ferroelectric memory devices using a ferroelectric planarization layer and fabrication methods
EP1289017A2 (en) * 2001-08-28 2003-03-05 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device

Also Published As

Publication number Publication date
WO2005038883A2 (en) 2005-04-28
JP2005101213A (en) 2005-04-14

Similar Documents

Publication Publication Date Title
TW200505033A (en) Capacitor and method of fabricating the same
WO2005034201A3 (en) Metal-insulator-metal capacitor and method of fabrication
WO2003103032A3 (en) A method for making a semiconductor device having a high-k gate dielectric
WO2006023026A3 (en) Method of forming a semiconductor device and structure thereof
EP1289017A3 (en) Semiconductor memory device and method for manufacturing the same
TW329037B (en) Semiconductor memory device
EP1724836A3 (en) Semiconductor device
WO2004027834A3 (en) Mim capacitor structures and fabrication methods in dual-damascene structures
TW200505032A (en) Capacitor with enhanced performance and method of manufacturing the same
WO2005064641A3 (en) Semiconductor device and method of fabricating the same
WO2006011632A3 (en) Semiconductor device including a conductive layer buried in an opening and method of manufacturing the same
TW200507106A (en) Semiconductor device and manufacturing method therefor
CA2381117A1 (en) Improved multiple terminal capacitor structure
EP1347500A3 (en) Semiconductor device and method of manufacturing the same
EP0989615A3 (en) Semiconductor device with capacitor and manufacturing method thereof
EP1115156A4 (en) Ferroelectric memory device and method of manufacturing the same
EP1471566A3 (en) Semiconductor device and method for fabricating the same
EP1061573A3 (en) Semiconductor device and method of manufacturing the same
EP1381077A3 (en) Capacitor and method for fabricating the same
EP1341218A3 (en) Semiconductor device manufacturing method
WO2002029865A3 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
EP1150344A3 (en) Semiconductor device having ferroelectric thin film and fabricating method therefor
WO2008114418A1 (en) Semiconductor device and its manufacturing method
TW200512925A (en) Semiconductor device having fuse and capacitor at the same level and method of fabricating the same
EP0949682A3 (en) Ferroelectric memory device with improved ferroelectric capacitor characteristics

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase