WO2005038943A3 - Organic thin-film transistor - Google Patents

Organic thin-film transistor Download PDF

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Publication number
WO2005038943A3
WO2005038943A3 PCT/US2004/034509 US2004034509W WO2005038943A3 WO 2005038943 A3 WO2005038943 A3 WO 2005038943A3 US 2004034509 W US2004034509 W US 2004034509W WO 2005038943 A3 WO2005038943 A3 WO 2005038943A3
Authority
WO
WIPO (PCT)
Prior art keywords
organic thin
film transistor
layer
organic
semiconductor layer
Prior art date
Application number
PCT/US2004/034509
Other languages
French (fr)
Other versions
WO2005038943A2 (en
Inventor
Pavel I Lazarev
Original Assignee
Nitto Denko Corp
Pavel I Lazarev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp, Pavel I Lazarev filed Critical Nitto Denko Corp
Publication of WO2005038943A2 publication Critical patent/WO2005038943A2/en
Publication of WO2005038943A3 publication Critical patent/WO2005038943A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731—Liquid crystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Abstract

The present invention relates to organic thin-film transistors using an organic compound in the semiconductor layer thereof. The organic semiconductor layer is made by means of Cascade Crystallization Process. Said layer is characterized by a globally ordered crystalline structure with intermolecular spacing of 3.4 ± 0.3 Å in the direction of one crystal axis. This layer is formed by rodlike supramolecules comprising at least one polycyclic organic compound with conjugated π-system and has electron-hole type of conductivity.
PCT/US2004/034509 2003-10-17 2004-10-18 Organic thin-film transistor WO2005038943A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51224103P 2003-10-17 2003-10-17
US60/512,241 2003-10-17

Publications (2)

Publication Number Publication Date
WO2005038943A2 WO2005038943A2 (en) 2005-04-28
WO2005038943A3 true WO2005038943A3 (en) 2005-12-29

Family

ID=34465332

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/034509 WO2005038943A2 (en) 2003-10-17 2004-10-18 Organic thin-film transistor

Country Status (2)

Country Link
US (1) US20050194640A1 (en)
WO (1) WO2005038943A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8077040B2 (en) 2000-01-24 2011-12-13 Nextreme, Llc RF-enabled pallet
US7342496B2 (en) 2000-01-24 2008-03-11 Nextreme Llc RF-enabled pallet
JP4415653B2 (en) * 2003-11-19 2010-02-17 セイコーエプソン株式会社 Thin film transistor manufacturing method
US7563638B2 (en) * 2004-10-29 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7408187B2 (en) * 2004-11-19 2008-08-05 Massachusetts Institute Of Technology Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process
DE102005048774B4 (en) * 2005-10-07 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrate, which is at least partially provided on a surface with a coating of a metal, and its use
US7601629B2 (en) * 2005-12-20 2009-10-13 Texas Instruments Incorporated Semiconductive device fabricated using subliming materials to form interlevel dielectrics
KR20080026957A (en) * 2006-09-22 2008-03-26 삼성전자주식회사 Method for manufacturing thin film transistor array panel
US20080142793A1 (en) * 2006-11-10 2008-06-19 Tang Ming L Organic Semiconductors
JP5657379B2 (en) * 2007-04-25 2015-01-21 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ Manufacturing method of electronic device
JP5470935B2 (en) * 2008-05-26 2014-04-16 ソニー株式会社 Dioxaanthanthrene compound and semiconductor device
KR101994332B1 (en) * 2012-10-30 2019-07-01 삼성디스플레이 주식회사 Organic light emitting transistor and display device including thereof
US10403435B2 (en) 2017-12-15 2019-09-03 Capacitor Sciences Incorporated Edder compound and capacitor thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5315129A (en) * 1990-08-20 1994-05-24 University Of Southern California Organic optoelectronic devices and methods
US5546889A (en) * 1993-10-06 1996-08-20 Matsushita Electric Industrial Co., Ltd. Method of manufacturing organic oriented film and method of manufacturing electronic device
WO2003007397A2 (en) * 2001-07-09 2003-01-23 Plastic Logic Limited Solution influenced alignment
EP1450420A1 (en) * 2003-02-24 2004-08-25 Sony International (Europe) GmbH Discotic liquid crystal based electronic device using interdigit structure electrode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5315129A (en) * 1990-08-20 1994-05-24 University Of Southern California Organic optoelectronic devices and methods
US5546889A (en) * 1993-10-06 1996-08-20 Matsushita Electric Industrial Co., Ltd. Method of manufacturing organic oriented film and method of manufacturing electronic device
WO2003007397A2 (en) * 2001-07-09 2003-01-23 Plastic Logic Limited Solution influenced alignment
EP1450420A1 (en) * 2003-02-24 2004-08-25 Sony International (Europe) GmbH Discotic liquid crystal based electronic device using interdigit structure electrode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE COMPENDEX [online] ENGINEERING INFORMATION, INC., NEW YORK, NY, US; 27 May 2003 (2003-05-27), KIMURA MUTSUMI ET AL: "Self-organization of hydrogen-bonded optically active phthalocyanine dimers", XP002344758, Database accession no. E2003257513620 *
LANGMUIR; LANGMUIR MAY 27 2003, vol. 19, no. 11, 27 May 2003 (2003-05-27), pages 4825 - 4830, XP002344713 *

Also Published As

Publication number Publication date
WO2005038943A2 (en) 2005-04-28
US20050194640A1 (en) 2005-09-08

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