WO2005039261A2 - Solder structures for out of plane connections and related methods - Google Patents

Solder structures for out of plane connections and related methods Download PDF

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Publication number
WO2005039261A2
WO2005039261A2 PCT/US2004/033946 US2004033946W WO2005039261A2 WO 2005039261 A2 WO2005039261 A2 WO 2005039261A2 US 2004033946 W US2004033946 W US 2004033946W WO 2005039261 A2 WO2005039261 A2 WO 2005039261A2
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WO
WIPO (PCT)
Prior art keywords
solder
edge
pad
substrate
die
Prior art date
Application number
PCT/US2004/033946
Other languages
French (fr)
Other versions
WO2005039261A3 (en
Inventor
Glenn A. Rinne
Original Assignee
Unitive International Limited
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Publication date
Application filed by Unitive International Limited filed Critical Unitive International Limited
Publication of WO2005039261A2 publication Critical patent/WO2005039261A2/en
Publication of WO2005039261A3 publication Critical patent/WO2005039261A3/en

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    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands
    • H05K2201/09381—Shape of non-curved single flat metallic pad, land or exposed part thereof; Shape of electrode of leadless component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0465—Shape of solder, e.g. differing from spherical shape, different shapes due to different solder pads
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of electronics, and more particularly, to structures for bonding electronic substrates and related methods.
  • the integrated circuit chips are generally mounted parallel to and facing the printed circuit board such that faces of the integrated circuit chips are adjacent a face of the circuit board.
  • This packaging technology allows a large number of input/output connections between the integrated circuit chips and the printed circuit board, especially when solder bump technology is used over the entire face of the integrated circuit chips.
  • this technology may limit a packaging density, because the large faces of the integrated circuit chips are mounted adjacent the face of the printed circuit board.
  • three-dimensional packaging has been proposed, wherein the chips are mounted orthogonal to the circuit board so that edges of the chips are adjacent the face of the circuit board.
  • solder may take the shape of a hemisphere or partial hemisphere on a contact pad.
  • it may be difficult to cause the solder on one contact pad to extend onto another contact pad, in a three-dimensional package.
  • solder Even if solder is placed on a pair of adjacent contact pads in a three-dimensional package, it may be difficult to cause the reflowed solder to join up, rather than forming individual solder bumps.
  • Solder interconnections are also discussed in U.S. Patent Nos. 5,793,116; 6,418,033; and 6,392,163. Each of these patents are assigned to the assignee of the present invention, and the disclosures of each of these patents are hereby incorporated herein in their entirety by reference.
  • a solder structure may include a substrate and a solder wettable pad on the substrate adjacent an edge of the substrate.
  • the solder wettable pad may have a length parallel to the edge of the substrate and a width perpendicular to the edge of the substrate wherein the length parallel to the edge of the substrate is greater than the width perpendicular to the edge of the substrate.
  • a solder bump on the solder wettable pad may extend laterally from the solder wettable pad at least to within about 10 microns of the edge of the substrate. According to some embodiments, the solder bump may extend laterally from the solder wettable pad to and/or beyond the edge of the substrate.
  • a method of forming a solder structure may include providing a wafer including a plurality of die therein, and forming a solder wettable pad on one of the die adjacent an edge of the die.
  • the solder wettable pad may have a length parallel to the edge of the die and a width perpendicular to the edge of the die wherein the length parallel to the edge of the die is greater than the width perpendicular to the edge of the die.
  • a solder bump may be formed on the solder wettable pad, and the die may be separated from the wafer along the edge of the die after plating the solder bump on the solder wettable pad.
  • a method of forming a solder structure may include providing a wafer including a plurality of die therein, and forming a solder wettable pad on one of the die adjacent an edge of the die.
  • a solder bump may be formed on the solder wettable pad such that the solder bump is maintained within the edge of the die, and the die may be separated from the wafer along the edge of the die after forming the solder bump on the solder wettable pad. After separating the die from the wafer, the solder bump on the solder wettable pad may be subjected to reflow so that the solder bump extends laterally from the solder wettable pad to at least within about 10 microns of the edge of the die. According to some embodiments, the solder bump may extend to and/or beyond the edge of the die.
  • a method of forming a solder structure may include forming a solder wettable pad on a substrate adjacent an edge of the substrate.
  • the solder wettable pad may have a length parallel to the edge of the substrate and a width perpendicular to the edge of the substrate wherein the length parallel to the edge of the substrate is greater than the width perpendicular to the edge of the substrate.
  • a solder bump may be formed on the solder wettable pad wherein the solder bump extends laterally from the solder wettable pad to at least within about 10 microns of the edge of the substrate. According to some embodiments, the solder bump may extend to and/or beyond the edge of the substrate.
  • Figure 1 is a diagram illustrating surface curvature at a point on an air-liquid interface according to embodiment of the present invention.
  • Figures 2A-I are cross-sectional and corresponding top views of bump structures according to embodiments of the present invention.
  • Figures 3-9, 11, and 12 are views of solder structures according to embodiments of the present invention.
  • Figure 10 is a graph illustrating internal pressure of a solder structure as a function of length of principal radii according to embodiments of the present invention.
  • Figures 13A-C are plan views illustrating steps of forming solder structures according to embodiments of the present invention.
  • first and second are used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second region, layer or section could be termed a first region, layer or section without departing from the teachings of the present invention. Like numbers refer to like elements throughout. [0021] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
  • reservoir and pad geometries may provide bump overhang and increase a range of applications, and in particular applications with relatively fine pitch.
  • the curvature of S at P can be represented by two orthogonal arcs or principal radii Rl and R2, as shown in Figure 1.
  • solder bumps may be placed (such as by plating) adjacent the edge of a die or substrate in a wafer, and the wafer including the die or substrate may be diced or sawed to singulate the die or substrate.
  • a die may include a plurality of integrated circuits (such as transistors, resistors, capacitors, diodes, inductors, etc.) therein and a wafer may include a plurality of such die.
  • the solder bumps on the die can then be melted (after singulating the die) to form solder bump structures extending beyond the edge of the die or substrate, and to cause the solder bump structures to touch and wet to pads on a mating substrate oriented at an angle to the edge of the die or substrate.
  • the mating substrate for example, may be another integrated circuit device and or a printed circuit board.
  • an overhang of solder may be increased to accommodate uncertainty in the width of a dicing kerf after dicing.
  • solder bumps on a die may be reduced to increase the number of interconnections along the edge of the die or substrate.
  • a formation of extraneous solder structures due to inherent instabilities and/or perturbations of the manufacturing processes may also be reduced.
  • the solder bump 21 may be formed using a sequence including solder plating through a mask, followed by dicing, followed by solder reflow. Because the solder reflow follows dicing, interference of the plated solder deposit with the dicing blade can be reduced, yet the solder may overhang the edge of the die (separated by dicing) after reflow. To deposit enough solder to create the super- hemisphere, the plating template photoresist and the plated solder deposit may need to be very thick. The thick photoresist and plating may result in significant cost, throughput, yield, and pitch constraints.
  • a super-hemispheric bump is illustrated in Figure 3.
  • solder bump 21 may be formed, for example, using evaporation, jetting, and/or paste.
  • a plurality of solder bumps 21 may be plated on respective bump pads 23 along an edge of an integrated circuit die before dicing the die from a wafer including a plurality of die.
  • the originally plated solder may be substantially cylindrical (before reflow) so that the plated solder does not extend significantly beyond the respective bump pad 23 before reflow. Accordingly, the die can be singulated before reflow without significantly interfering with the plated solder bump.
  • the solder bump 21 can be subjected to reflow so that the reflowed solder bump 21 extends beyond the bump pad 23 by an overhang distance D.
  • the overhang distance D is greater than a distance between the edge of bump pad 23 after reflow, the bump may contact a pad on another substrate at the edge of the die having the solder bump 23 thereon.
  • the solder bump 31 is directionally offset from the pad 33 to increase the overhang D. This offset may be possible if the solder can wet the side of the pad, which means the pad must have significant thickness and must be selectively wettable on one side.
  • a reservoir of solder is provided in the form of a narrow elongated region 41 connected to the bump pad 43. Differential pressure in the molten solder 45 may cause the solder in the reservoir to flow to the bump pad during reflow. A thickness requirement for the plated solder may thus be reduced, and/or an overhang distance D may be increased. Accordingly, cost may be reduced, and throughput may be increased. Solder reservoirs are discussed in greater detail in U.S. Patent No.
  • Figure 2D is a more realistic representation of the structure of Figure 2C.
  • the tendency of liquid solder to reduce surface energy by increasing the radii of curvature may result in a pronounced meniscus 51 (neck) at the transition from the reservoir 53 to the bump pad 55 (see Figure 6).
  • This may have two effects.
  • First, a relatively large volume of solder may be trapped in the meniscus 51.
  • Second, a radius of curvature of the bump 57 may increase along the diameter aligned to the point of connection between reservoir and pad. The first effect may negate some of the advantage of the reservoir and the second may reduce the overhang by increasing the effective diameter of the wetted pad.
  • Figure 4 shows a plan view of plated solder on a circular bump pad and on a rectangular reservoir prior to reflow.
  • Figures 5 and 6 show respective top and plan views of the solder of Figure 4 after being subjected to reflow.
  • the structures of Figures 5 and 6 correspond to those of Figures 2D.
  • Figure 2E attempts to increase the overhang D of solder bump 61 from pad 65 by simply increasing the volume may net little gain because the meniscus 63 on reservoir 67 may grow larger and the effective wetted diameter may increase.
  • increasing a solder volume may increase the size of meniscus 63 so that the overhand D does not increase significantly.
  • a size of the meniscus 71 can be reduced by changing the pressure differential, by either increasing the diameter of pad 73 or reducing the width of reservoir 75, as shown in Figure 2F.
  • Increasing the diameter of pad 73 may affect the pitch and the volume of solder needed to achieve a given overhang D of solder bump 77. Decreasing the width of reservoir 75 may decrease the volume of the reservoir. Both effects may be counter to the goal.
  • Increasing the pad diameter to reduce internal pressure and reducing pad diameter to increase overhang can be decoupled, as seen in the Laplace- Young equation. Recognition that the two principal radii are different allows the oval design of Figure 2G.
  • the radius of pad 81 parallel to the edge of the die can be relatively large so the internal pressure is lower and the meniscus 87 (neck) is smaller.
  • the radius of pad 81 perpendicular to the die edge can be relatively narrow to increase the solder bump 85 overhang. Stated in other words, the pad 81 may have a length L parallel to the die edge that is greater than a width W perpendicular to the die edge.
  • a geometry that exhibits different principal radii is the truncated circle or 'D' shaped pad shown in Figures 8 and 9. [0036] Further improvement can be seen in Figure 2H where the point of connection between the reservoirs 91 and the pad 93 has been moved to the sides of the pad 93. Two reservoirs 91 may be used to retain symmetry.
  • the reservoirs 91 may not significantly increase the diameter/width W of pad 93 (perpendicular to the die edge) so the overhang of solder bump 95 can be improved.
  • the liquid will not form a sharp angle, squaring the corners of pad 101 along the die edge as shown in Figure 21, may pull the solder 103 toward the pad edge, thus improving overhang D further.
  • Reservoirs 105 may be provided at ends of the pad 101.
  • tributary mouths may be provided. i. Mouths of tributaries (where branches meet the main reservoir) may create localized regions of low pressure because both principal radii may be relatively large. The intersection may be kept narrow enough that the low pressure does not create a large upwelling that can become super-hemispheric resulting in a runaway situation. Both the tributary and the main reservoir may thus be narrowed by at least 20% at the mouth of tributaries. d. Spacing may heed a flow progression.
  • a flared narrowing in the reservoir may create a sluice that can slow a rate of fluid flow.
  • a build-up of liquid at bends, tributary mouths, and other locations may thus be reduced and/or prevented.
  • Pad Design a. Reservoir to pad edge angle may be acute to reduce any meniscus.
  • Narrow dimension may be greater than the widest reservoir narrow dimension i. More particularly, a narrow pad dimension may be > 10% larger than a widest reservoir narrow dimension.
  • Figure 11 illustrates representative structures according to embodiments of the present invention. Here, a structure 55 ⁇ m (micron) wide, 225 ⁇ m (micron) long, and 20 ⁇ m (micron) thick may result in an overhang of 21 ⁇ m (micron).
  • a solder bump 1101 on a first substrate 1103 may overhang an edge of the substrate 1103 for bonding with a pad of a second substrate 1107 (such as a printed circuit board, another integrated circuit die, etc.).
  • Reservoirs 1109a-b may be coupled with opposite ends of the solder bump 1101, and the reservoirs may have one or more bends therein to reduce an amount of substrate space consumed.
  • one or both of the reservoirs may include a plurality of branches.
  • the reservoir 1109a may include branches 1109a' and 1109a"
  • the reservoir 1109b may included branches 1109b' and 1109b".
  • one or more reservoirs and/or branches may include a flared sluice.
  • solder may be plated to a uniform thickness in the reservoir and bump regions so that the plated solder in the bump region does not interfere when dicing the substrate from a wafer including the substrate.
  • the plated solder can be heated above its melting temperature so that solder flows from the reservoirs and branches thereof (1109a, 1109a', 1109a", 1109b, 1109b', and 1109b") to the bump 1101. Accordingly, the solder bump 1101 can expand laterally beyond the edge of the substrate 1103 for bonding with substrate 1107.
  • Structures according to additional embodiments of the invention are shown in Figure 12.
  • a solder bump 1201 on a first substrate 1203 may overhang an edge of the substrate 1203 (such as an integrated circuit die) for bonding with a pad 1205 of a second substrate 1207 (such as a printed circuit board, another integrated circuit die, etc.).
  • Reservoirs 1209a-b may be coupled with opposite ends of the solder bump 1201, and the reservoirs may have one or more bends therein to reduce an amount of substrate space consumed.
  • one or both of the reservoirs may include a plurality of branches.
  • the reservoir 1209b may include branches 1209b' and 1209b".
  • one or more reservoirs and/or branches may include a flared sluice.
  • solder may be plated to a uniform thickness in the reservoir and bump regions so that the plated solder in the bump region does not interfere when dicing the substrate from a wafer including the substrate.
  • the plated solder can be heated above its melting temperature so that solder flows from the reservoirs and branches thereof (1209a, 1209b, 1209b', and 1209b") to the bump 1201. Accordingly, the solder bump 1201 can expand laterally beyond the edge of the substrate 1203 for bonding with substrate 1207.
  • Figures 13A-C are plan views illustrating steps of forming solder structures according to embodiments of " the present invention.
  • a plurality of microelectronic die 1301a-i may be formed on a semiconductor wafer 1303, and the microelectronic die 1301a-i may be separated by streets 1305.
  • Each of the die 1301 a-i may be an integrated circuit device including a plurality of electronic devices such as transistors, diodes, resistors, capacitors, inductors, etc.
  • a plurality of solder bumps 1307 may be formed on respective solder wettable pads (not shown) on the microelectronic die 1301a-i.
  • a continuous seed layer may be formed across the wafer 1303, and the seed layer may be used as a plating electrode to selectively electroplate the solder bumps 1307 through a plating mask or template.
  • the plating mask or template and portions of the seed layer not covered by the solder bumps may then be removed- Portions of the seed layer remaining between respective solder bumps 1307 and die 1301a-i may make up the solder wettable pads.
  • the seed layer and the resulting solder wettable pads may include an adhesion layer (such as a layer of titanium, tungsten, chrome, and/or combinations thereof) and a conduction layer (such as a layer of copper).
  • Each of the solder wettable pads may also include a conductive barrier layer (such as a layer of nickel, platinum, palladium, and/or combinations thereof) which may be provided as a portion of a continuous seed layer or which may be electroplated prior to electroplating the solder bumps.
  • a conductive barrier layer such as a layer of nickel, platinum, palladium, and/or combinations thereof
  • the solder bumps 1307 are maintained within edges of the respective die 1301a-i before separating the individual die from the wafer, and the die may be separated from the wafer 1303, for example, by sawing the wafer 1303 along streets 1305. Accordingly, the solder bumps do not interfere with sawing the wafer 1303, and the separated die 1301a of Figure 13B may be provided with the solder bumps 1307 maintained inside edges of the die 1301a.
  • solder bumps 1307 may be heated to a reflow temperature so that the solder bumps 1307' extend laterally toward an edge of the die 1301a. As shown in Figure 13C, the solder bumps 1307' may extend to and/or beyond the edge of the die 1301a.
  • solder wettable pads may be provided, for example, using structures discussed above with respect to Figures 2A-I, 3-9, 11, and/or 12 to provide that solder bumps 1307' extends laterally to and/or beyond the edge of the substrate after reflow.
  • the solder bumps 1307' can thus provide interconnection to another substrate (such as another die and/or printed circuit board) provided along an edge thereof. Connection to another substrate is discussed, for example, in U.S. Patent No. 5,963,793, the disclosure of which is hereby incorporated herein in its entirety by reference.
  • the solder bumps 1307 may be set back from a nearest edge of the die 1301a by at least about 20 microns before reflow so that the solder bumps do not interfere with separation of the die 1301a from the wafer 1303.
  • the solder bumps 1307' may extend toward the nearest edge of the die 1301a. More particularly, the solder bumps 1307' may extend at least to within about 10 microns from the edge of the die 1301a after reflow. According to some embodiments, the solder bumps 1307' may extend at least to within about 5 microns of the edge of the die 1301a after reflow.
  • solder bumps 1307 may be offset from an edge of the die 1301a before reflow by at least about 20 microns, and the solder bumps 1307' may extend to and/or beyond the edge of the die 1301a after reflow.
  • solder wettable pad refers to one or more conductive layers provided between a solder bump and a substrate.
  • a solder wettable pad may include an adhesion layer (such as a layer of titanium, tungsten, chrome, and/or combinations thereof), a conduction layer (such as a layer of copper), and/or a barrier layer (such as a layer of nickel, platinum, palladium, and/or combinations thereof).
  • a solder bump may be a bump of one or more different solder materials.
  • a solder bump may include one or more of a single element, binary, ternary, and/or higher order solder; such as a lead-tin solder, a lead-bismuth solder, a lead-indium solder, a lead free solder, a tin-silver solder, a tin-silver-copper solder, an indium-tin solder, an indium-gallium solder, a gallium solder, an indium-bismuth solder, a tin-bismuth solder, an indium- cadmium solder, bismuth-cadmium solder, tin-cadmium, etc.
  • a solder wettable pad may provide a surface that is wettable to a solder bump wherein the solder wettable surface of the solder wettable pad and the solder bump comprise different materials.

Abstract

Methods of forming a solder structure may include providing a wafer including a plurality of die therein, and a solder wettable pad may be formed on one of the die adjacent an edge of the die. The solder wettable pad may have a length parallel to the edge of the die and a width perpendicular to the edge of the die wherein the length parallel to the edge of the die is greater than the width perpendicular to the edge of the die. A solder bump may be plated on the solder wettable pad, and the die may be separated from the wafer along the edge of the die after plating the solder bump on the solder wettable pad. Moreover, the solder bump may be reflowed on the solder wettable pad so that the solder structure extends laterally from the solder wettable pad beyond the edge of the die after separating the die from the wafer. Related structures are also discussed.

Description

SOLDER STRUCTURES FOR OUT OF PLANE CONNECTIONS AND RELATED METHODS
Related Application [0001] This application claims the benefit of and priority to U. S. Provisional Application No. 60/510,819 filed October 14, 2003, the disclosure of which is hereby incorporated herein in its entirety by reference.
Field Of The Invention [0002] The present invention relates to the field of electronics, and more particularly, to structures for bonding electronic substrates and related methods.
Background [0003] In packaging microelectronic devices, such as packaging integrated circuit chips on printed circuit boards, the integrated circuit chips are generally mounted parallel to and facing the printed circuit board such that faces of the integrated circuit chips are adjacent a face of the circuit board. This packaging technology allows a large number of input/output connections between the integrated circuit chips and the printed circuit board, especially when solder bump technology is used over the entire face of the integrated circuit chips. However, this technology may limit a packaging density, because the large faces of the integrated circuit chips are mounted adjacent the face of the printed circuit board. [0004] To increase the packaging density of chips on a printed circuit board, three-dimensional packaging has been proposed, wherein the chips are mounted orthogonal to the circuit board so that edges of the chips are adjacent the face of the circuit board. See, for example, U.S. Pat. No. 5,347,428 to Carson et al. entitled "Module Comprising IC Memory Stack Dedicated to and Structurally Combined With an IC Microprocessor Chip" and U.S. Pat. No. 5,432,729 to Carson et al. entitled "Electronic Module Comprising a Stack of IC Chips Each Interacting With an IC Chip Secured to the Stack", both of which are assigned to Irvine Sensors Corporation. In these patents, solder bumps are used to connect the edges, rather than the faces of integrated circuit chips to a substrate. Unfortunately, an edge-to-face connection may be difficult and costly to produce. [0005] U.S. Pat. No. 5,113,314 to Wheeler et al. entitled "High Speed, High Density Chip Mounting" describes another three-dimensional packaging technique. The '314 patent describes a plurality of integrated circuit chips whose active faces are perpendicular to a chip carrier. Solder bumps are used to connect pads on the chips to pads on the substrate. [0006] An issue in using solder bump technology to interconnect a three-dimensional package is how to get the solder bump to bridge from one substrate to another. In particular, it may be difficult to form solder which extends beyond the edge of a chip because a chip sawing or dicing operation may remove solder which extends beyond the chip edge. Moreover, during solder reflow, the solder may take the shape of a hemisphere or partial hemisphere on a contact pad. Thus, it may be difficult to cause the solder on one contact pad to extend onto another contact pad, in a three-dimensional package. Even if solder is placed on a pair of adjacent contact pads in a three-dimensional package, it may be difficult to cause the reflowed solder to join up, rather than forming individual solder bumps. [0007] Solder interconnections are also discussed in U.S. Patent Nos. 5,793,116; 6,418,033; and 6,392,163. Each of these patents are assigned to the assignee of the present invention, and the disclosures of each of these patents are hereby incorporated herein in their entirety by reference.
Summary [0008] According to embodiments of the present invention, a solder structure may include a substrate and a solder wettable pad on the substrate adjacent an edge of the substrate. The solder wettable pad may have a length parallel to the edge of the substrate and a width perpendicular to the edge of the substrate wherein the length parallel to the edge of the substrate is greater than the width perpendicular to the edge of the substrate. In addition, a solder bump on the solder wettable pad may extend laterally from the solder wettable pad at least to within about 10 microns of the edge of the substrate. According to some embodiments, the solder bump may extend laterally from the solder wettable pad to and/or beyond the edge of the substrate. [0009] According to additional embodiments of the present invention, a method of forming a solder structure may include providing a wafer including a plurality of die therein, and forming a solder wettable pad on one of the die adjacent an edge of the die. The solder wettable pad may have a length parallel to the edge of the die and a width perpendicular to the edge of the die wherein the length parallel to the edge of the die is greater than the width perpendicular to the edge of the die. A solder bump may be formed on the solder wettable pad, and the die may be separated from the wafer along the edge of the die after plating the solder bump on the solder wettable pad. After separating the die from the wafer, the solder bump on the solder wettable pad may be reflowed so that the solder structure extends laterally from the solder wettable pad toward the edge of the die. According to some embodiments, the solder bump may extend laterally to and/or beyond the edge of the die. [0010] According to still additional embodiments of the present invention, a method of forming a solder structure may include providing a wafer including a plurality of die therein, and forming a solder wettable pad on one of the die adjacent an edge of the die. A solder bump may be formed on the solder wettable pad such that the solder bump is maintained within the edge of the die, and the die may be separated from the wafer along the edge of the die after forming the solder bump on the solder wettable pad. After separating the die from the wafer, the solder bump on the solder wettable pad may be subjected to reflow so that the solder bump extends laterally from the solder wettable pad to at least within about 10 microns of the edge of the die. According to some embodiments, the solder bump may extend to and/or beyond the edge of the die. [0011] According to yet additional embodiments of the present invention, a method of forming a solder structure may include forming a solder wettable pad on a substrate adjacent an edge of the substrate. The solder wettable pad may have a length parallel to the edge of the substrate and a width perpendicular to the edge of the substrate wherein the length parallel to the edge of the substrate is greater than the width perpendicular to the edge of the substrate. In addition, a solder bump may be formed on the solder wettable pad wherein the solder bump extends laterally from the solder wettable pad to at least within about 10 microns of the edge of the substrate. According to some embodiments, the solder bump may extend to and/or beyond the edge of the substrate.
Brief Description Of The Drawings [0012] Figure 1 is a diagram illustrating surface curvature at a point on an air-liquid interface according to embodiment of the present invention. [0013] Figures 2A-I are cross-sectional and corresponding top views of bump structures according to embodiments of the present invention. [0014] Figures 3-9, 11, and 12 are views of solder structures according to embodiments of the present invention. [0015] Figure 10 is a graph illustrating internal pressure of a solder structure as a function of length of principal radii according to embodiments of the present invention. [0016] Figures 13A-C are plan views illustrating steps of forming solder structures according to embodiments of the present invention.
Detailed Description [0017] The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. [0018] In the drawings, the thickness of layers and regions are exaggerated for clarity. It will also be understood that when an element such as a layer, region or substrate is referred to as being on another element, it can be directly on the other element or intervening elements may also be present. In contrast, if an element such as a layer, region or substrate is referred to as being directly on another element, then no other intervening elements are present. As used herein, the term and/or includes any and all combinations of one or more of the associated listed items. [0019] Furthermore, relative terms, such as beneath, upper, and/or lower may be used herein to describe one element's relationship to another element as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as below other elements would then be oriented above the other elements. The exemplary term below, can therefore, encompasses both an orientation of above and below. [0020] It will be understood that although the terms first and second are used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second region, layer or section could be termed a first region, layer or section without departing from the teachings of the present invention. Like numbers refer to like elements throughout. [0021] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. [0022] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. [0023] According to embodiments of the present invention, reservoir and pad geometries may provide bump overhang and increase a range of applications, and in particular applications with relatively fine pitch. In the analysis of Laplace- Young, at any point P on a surface S, the curvature of S at P can be represented by two orthogonal arcs or principal radii Rl and R2, as shown in Figure 1. [0024] If S represents an air-liquid interface, then the pressure difference across the surface is:
Figure imgf000007_0001
For a spherical liquid body, this reduces to: ΔP = ^, [2] R where ( is the surface tension difference across the interface. This pressure may also represent a potential energy of the surface. Since natural forces may tend to reduce energy, the liquid surface may tend to increase Rl and R2. [0025] According to embodiments of the present invention, solder bumps may be placed (such as by plating) adjacent the edge of a die or substrate in a wafer, and the wafer including the die or substrate may be diced or sawed to singulate the die or substrate. More particularly, a die may include a plurality of integrated circuits (such as transistors, resistors, capacitors, diodes, inductors, etc.) therein and a wafer may include a plurality of such die. The solder bumps on the die can then be melted (after singulating the die) to form solder bump structures extending beyond the edge of the die or substrate, and to cause the solder bump structures to touch and wet to pads on a mating substrate oriented at an angle to the edge of the die or substrate. The mating substrate, for example, may be another integrated circuit device and or a printed circuit board. [0026] In addition, an overhang of solder may be increased to accommodate uncertainty in the width of a dicing kerf after dicing. Moreover, pitch or center-to-center spacing of these solder bumps on a die may be reduced to increase the number of interconnections along the edge of the die or substrate. A formation of extraneous solder structures due to inherent instabilities and/or perturbations of the manufacturing processes may also be reduced. [0027] Structures according to embodiments of the present invention are discussed below with respect to Figures 2A-I. In each of Figures 2A-I, there are provided corresponding cross-sectional and top views of solder bump structures according to embodiments of the present invention. [0028] A super-hemispheric bump geometry is shown in Figure 2A. The bump 21 circumference (outer circle) is concentric with the bump pad 23 (inner circle). A relatively large volume of solder may be required for this approach. The solder bump 21 may be formed using a sequence including solder plating through a mask, followed by dicing, followed by solder reflow. Because the solder reflow follows dicing, interference of the plated solder deposit with the dicing blade can be reduced, yet the solder may overhang the edge of the die (separated by dicing) after reflow. To deposit enough solder to create the super- hemisphere, the plating template photoresist and the plated solder deposit may need to be very thick. The thick photoresist and plating may result in significant cost, throughput, yield, and pitch constraints. A super-hemispheric bump is illustrated in Figure 3. In alternatives, the solder bump 21 may be formed, for example, using evaporation, jetting, and/or paste. [0029] According to embodiments of the present invention illustrated in Figures 2A and 3, a plurality of solder bumps 21 may be plated on respective bump pads 23 along an edge of an integrated circuit die before dicing the die from a wafer including a plurality of die. The originally plated solder may be substantially cylindrical (before reflow) so that the plated solder does not extend significantly beyond the respective bump pad 23 before reflow. Accordingly, the die can be singulated before reflow without significantly interfering with the plated solder bump. After dicing, the solder bump 21 can be subjected to reflow so that the reflowed solder bump 21 extends beyond the bump pad 23 by an overhang distance D. By providing that the overhang distance D is greater than a distance between the edge of bump pad 23 after reflow, the bump may contact a pad on another substrate at the edge of the die having the solder bump 23 thereon. [0030] In Figure 2B, the solder bump 31 is directionally offset from the pad 33 to increase the overhang D. This offset may be possible if the solder can wet the side of the pad, which means the pad must have significant thickness and must be selectively wettable on one side. Selective wetting may be possible through selective oxidation or coating, the selective removal of oxide on the wetted side, or directional resist removal. However, the thickness of the solder deposit may be substantial and the cost may be high, while the control of directional wetting may be challenging. [0031] In Figure 2C, a reservoir of solder is provided in the form of a narrow elongated region 41 connected to the bump pad 43. Differential pressure in the molten solder 45 may cause the solder in the reservoir to flow to the bump pad during reflow. A thickness requirement for the plated solder may thus be reduced, and/or an overhang distance D may be increased. Accordingly, cost may be reduced, and throughput may be increased. Solder reservoirs are discussed in greater detail in U.S. Patent No. 6,388,203, the disclosure of which is hereby incorporated herein in its entirety by reference. [0032] Figure 2D is a more realistic representation of the structure of Figure 2C. Here the tendency of liquid solder to reduce surface energy by increasing the radii of curvature may result in a pronounced meniscus 51 (neck) at the transition from the reservoir 53 to the bump pad 55 (see Figure 6). This may have two effects. First, a relatively large volume of solder may be trapped in the meniscus 51. Second, a radius of curvature of the bump 57 may increase along the diameter aligned to the point of connection between reservoir and pad. The first effect may negate some of the advantage of the reservoir and the second may reduce the overhang by increasing the effective diameter of the wetted pad. Figure 4 shows a plan view of plated solder on a circular bump pad and on a rectangular reservoir prior to reflow. Figures 5 and 6 show respective top and plan views of the solder of Figure 4 after being subjected to reflow. The structures of Figures 5 and 6 correspond to those of Figures 2D. [0033] In Figure 2E, attempts to increase the overhang D of solder bump 61 from pad 65 by simply increasing the volume may net little gain because the meniscus 63 on reservoir 67 may grow larger and the effective wetted diameter may increase. As shown in Figure 7, increasing a solder volume may increase the size of meniscus 63 so that the overhand D does not increase significantly. [0034] A size of the meniscus 71 (neck) can be reduced by changing the pressure differential, by either increasing the diameter of pad 73 or reducing the width of reservoir 75, as shown in Figure 2F. Increasing the diameter of pad 73 may affect the pitch and the volume of solder needed to achieve a given overhang D of solder bump 77. Decreasing the width of reservoir 75 may decrease the volume of the reservoir. Both effects may be counter to the goal. [0035] Increasing the pad diameter to reduce internal pressure and reducing pad diameter to increase overhang can be decoupled, as seen in the Laplace- Young equation. Recognition that the two principal radii are different allows the oval design of Figure 2G. The radius of pad 81 parallel to the edge of the die can be relatively large so the internal pressure is lower and the meniscus 87 (neck) is smaller. The radius of pad 81 perpendicular to the die edge can be relatively narrow to increase the solder bump 85 overhang. Stated in other words, the pad 81 may have a length L parallel to the die edge that is greater than a width W perpendicular to the die edge. A geometry that exhibits different principal radii is the truncated circle or 'D' shaped pad shown in Figures 8 and 9. [0036] Further improvement can be seen in Figure 2H where the point of connection between the reservoirs 91 and the pad 93 has been moved to the sides of the pad 93. Two reservoirs 91 may be used to retain symmetry. In this case, the reservoirs 91 may not significantly increase the diameter/width W of pad 93 (perpendicular to the die edge) so the overhang of solder bump 95 can be improved. [0037] Since the liquid will not form a sharp angle, squaring the corners of pad 101 along the die edge as shown in Figure 21, may pull the solder 103 toward the pad edge, thus improving overhang D further. Reservoirs 105 may be provided at ends of the pad 101. [0038] These designs may work because the internal pressure may be dominated by the smaller of the two principal radii. Figure 10 shows the internal pressure as the two radii are varied. It can be seen that the pressure may be substantially independent of the larger radii, if the radii are substantially different. [0039] Guidelines for solder wettable pads, solder wettable reservoirs, and solder bumps according to some embodiments of the present invention are provided below. 1.) Reservoir design a. Relatively sharp interior angles may be provided. i. Relatively high surface tension liquids such as molten solder constrained to a two dimensional surface may tend to form a meniscus (a bridge or short cut) at an interior angle. Any chamfer of the corner may exacerbate the problem and may lead to extraneous bump formation. b. Wide bights may be provided. i. A tendency to bridge across a bight (U-shaped section) of a reservoir path may depend on a width of the bight and a length of the meniscus. If the menisci of the two corners overlap there may be a possibility that they will merge and form a metastable bridge over the bight. Bights with openings wider than 2.5 times the radius of curvature may thus be provided. c. Narrow tributary mouths may be provided. i. Mouths of tributaries (where branches meet the main reservoir) may create localized regions of low pressure because both principal radii may be relatively large. The intersection may be kept narrow enough that the low pressure does not create a large upwelling that can become super-hemispheric resulting in a runaway situation. Both the tributary and the main reservoir may thus be narrowed by at least 20% at the mouth of tributaries. d. Spacing may heed a flow progression. i. As a reservoir soldershed drains, distant ends may drain first. Solder may build up at mouths of tributaries, creating temporary mounds of molten solder that may be relatively large. Since the wetting angles are relatively large, the drained ends may not merge with the mounds because the ends may have a relatively low profile. ii. Therefore, spacing between ends of a reservoir and other portions of the reservoir can be at reduced and/or minimum dimensions. Reservoir channels may require additional spacing to allow for the increase in width during flow. Tributary mouths may require further spacing to allow for the temporary expansion during reflow. e. Sluices may be flared. i. A timing of flow progression can be adjusted by introducing restrictions in a flow path. A flared narrowing in the reservoir may create a sluice that can slow a rate of fluid flow. A build-up of liquid at bends, tributary mouths, and other locations may thus be reduced and/or prevented. 2.) Pad Design a. Reservoir to pad edge angle may be acute to reduce any meniscus. b. Narrow dimension may be greater than the widest reservoir narrow dimension i. More particularly, a narrow pad dimension may be > 10% larger than a widest reservoir narrow dimension. [0040] Figure 11 illustrates representative structures according to embodiments of the present invention. Here, a structure 55Φm (micron) wide, 225 Φm (micron) long, and 20 Φm (micron) thick may result in an overhang of 21 Φm (micron). In Figure 11, a solder bump 1101 on a first substrate 1103 (such as an integrated circuit die) may overhang an edge of the substrate 1103 for bonding with a pad of a second substrate 1107 (such as a printed circuit board, another integrated circuit die, etc.). Reservoirs 1109a-b may be coupled with opposite ends of the solder bump 1101, and the reservoirs may have one or more bends therein to reduce an amount of substrate space consumed. Moreover, one or both of the reservoirs may include a plurality of branches. For example, the reservoir 1109a may include branches 1109a' and 1109a", and the reservoir 1109b may included branches 1109b' and 1109b". In addition, one or more reservoirs and/or branches may include a flared sluice. [0041] More particularly, solder may be plated to a uniform thickness in the reservoir and bump regions so that the plated solder in the bump region does not interfere when dicing the substrate from a wafer including the substrate. Once the substrate has been diced, the plated solder can be heated above its melting temperature so that solder flows from the reservoirs and branches thereof (1109a, 1109a', 1109a", 1109b, 1109b', and 1109b") to the bump 1101. Accordingly, the solder bump 1101 can expand laterally beyond the edge of the substrate 1103 for bonding with substrate 1107. [0042] Structures according to additional embodiments of the invention are shown in Figure 12. In Figure 12, a solder bump 1201 on a first substrate 1203 may overhang an edge of the substrate 1203 (such as an integrated circuit die) for bonding with a pad 1205 of a second substrate 1207 (such as a printed circuit board, another integrated circuit die, etc.). Reservoirs 1209a-b may be coupled with opposite ends of the solder bump 1201, and the reservoirs may have one or more bends therein to reduce an amount of substrate space consumed. Moreover, one or both of the reservoirs may include a plurality of branches. For example, the reservoir 1209b may include branches 1209b' and 1209b". In addition, one or more reservoirs and/or branches may include a flared sluice. [0043] More particularly, solder may be plated to a uniform thickness in the reservoir and bump regions so that the plated solder in the bump region does not interfere when dicing the substrate from a wafer including the substrate. Once the substrate has been diced, the plated solder can be heated above its melting temperature so that solder flows from the reservoirs and branches thereof (1209a, 1209b, 1209b', and 1209b") to the bump 1201. Accordingly, the solder bump 1201 can expand laterally beyond the edge of the substrate 1203 for bonding with substrate 1207. [0044] Figures 13A-C are plan views illustrating steps of forming solder structures according to embodiments of" the present invention. As shown in Figure 13 A, a plurality of microelectronic die 1301a-i (also referred to as substrates) may be formed on a semiconductor wafer 1303, and the microelectronic die 1301a-i may be separated by streets 1305. Each of the die 1301 a-i, for example, may be an integrated circuit device including a plurality of electronic devices such as transistors, diodes, resistors, capacitors, inductors, etc. Moreover, a plurality of solder bumps 1307 may be formed on respective solder wettable pads (not shown) on the microelectronic die 1301a-i. [0045] For example, a continuous seed layer may be formed across the wafer 1303, and the seed layer may be used as a plating electrode to selectively electroplate the solder bumps 1307 through a plating mask or template. The plating mask or template and portions of the seed layer not covered by the solder bumps may then be removed- Portions of the seed layer remaining between respective solder bumps 1307 and die 1301a-i may make up the solder wettable pads. For example, the seed layer and the resulting solder wettable pads may include an adhesion layer (such as a layer of titanium, tungsten, chrome, and/or combinations thereof) and a conduction layer (such as a layer of copper). Each of the solder wettable pads may also include a conductive barrier layer (such as a layer of nickel, platinum, palladium, and/or combinations thereof) which may be provided as a portion of a continuous seed layer or which may be electroplated prior to electroplating the solder bumps. [0046] As shown in Figure 13 A, the solder bumps 1307 are maintained within edges of the respective die 1301a-i before separating the individual die from the wafer, and the die may be separated from the wafer 1303, for example, by sawing the wafer 1303 along streets 1305. Accordingly, the solder bumps do not interfere with sawing the wafer 1303, and the separated die 1301a of Figure 13B may be provided with the solder bumps 1307 maintained inside edges of the die 1301a. Typically, a set back in the range of about 20 microns to about 200 microns may be provided between the solder bumps 1307 and the edge of the respective die 1301a-i. [0047] After separating the die 1301a from the wafer 1303, the solder bumps may be heated to a reflow temperature so that the solder bumps 1307' extend laterally toward an edge of the die 1301a. As shown in Figure 13C, the solder bumps 1307' may extend to and/or beyond the edge of the die 1301a. The solder wettable pads may be provided, for example, using structures discussed above with respect to Figures 2A-I, 3-9, 11, and/or 12 to provide that solder bumps 1307' extends laterally to and/or beyond the edge of the substrate after reflow. The solder bumps 1307' can thus provide interconnection to another substrate (such as another die and/or printed circuit board) provided along an edge thereof. Connection to another substrate is discussed, for example, in U.S. Patent No. 5,963,793, the disclosure of which is hereby incorporated herein in its entirety by reference. [0048] According to some embodiments of the present invention, the solder bumps 1307 may be set back from a nearest edge of the die 1301a by at least about 20 microns before reflow so that the solder bumps do not interfere with separation of the die 1301a from the wafer 1303. After reflow, the solder bumps 1307' may extend toward the nearest edge of the die 1301a. More particularly, the solder bumps 1307' may extend at least to within about 10 microns from the edge of the die 1301a after reflow. According to some embodiments, the solder bumps 1307' may extend at least to within about 5 microns of the edge of the die 1301a after reflow. As shown in Figures 13B and 13C, the solder bumps 1307 may be offset from an edge of the die 1301a before reflow by at least about 20 microns, and the solder bumps 1307' may extend to and/or beyond the edge of the die 1301a after reflow. [0049] As used herein, the term solder wettable pad refers to one or more conductive layers provided between a solder bump and a substrate. A solder wettable pad may include an adhesion layer (such as a layer of titanium, tungsten, chrome, and/or combinations thereof), a conduction layer (such as a layer of copper), and/or a barrier layer (such as a layer of nickel, platinum, palladium, and/or combinations thereof). A solder bump may be a bump of one or more different solder materials. For example, a solder bump may include one or more of a single element, binary, ternary, and/or higher order solder; such as a lead-tin solder, a lead-bismuth solder, a lead-indium solder, a lead free solder, a tin-silver solder, a tin-silver-copper solder, an indium-tin solder, an indium-gallium solder, a gallium solder, an indium-bismuth solder, a tin-bismuth solder, an indium- cadmium solder, bismuth-cadmium solder, tin-cadmium, etc. Accordingly, a solder wettable pad may provide a surface that is wettable to a solder bump wherein the solder wettable surface of the solder wettable pad and the solder bump comprise different materials. [0050] While the present invention has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.

Claims

That which is claimed is: 1. A solder structure comprising: a substrate; a solder wettable pad on the substrate adjacent an edge of the substrate, the solder wettable pad having a length parallel to the edge of the substrate and a width peφendicular to the edge of the substrate wherein the length parallel to the edge of the substrate is greater than the width perpendicular to the edge of the substrate; and a solder bump on the solder wettable pad wherein the solder bump extends laterally from the solder wettable pad at least to within about 10 microns the edge of the substrate.
2. A solder structure according to Claim 1 wherein the solder bump extends laterally from the solder wettable pad beyond the edge of the substrate.
3. A solder structure according to Claim 1 wherein the solder bump extends laterally from the solder wettable pad to the edge of the substrate.
4. A solder structure according to Claim 1 further comprising: a solder wettable reservoir connected to the solder wettable pad, the solder wettable reservoir having a width at a connection with the solder wettable pad that is less than the width of the solder wettable pad.
5. A solder structure according to Claim 4 wherein the width of the solder wettable pad is at least 10% greater that a greatest width of the solder wettable reservoir.
6. A solder structure according to Claim 4 wherein an angle of a junction between the solder wettable pad and the solder wettable reservoir comprises an acute angle.
7. A solder structure according to Claim 4 wherein the solder wettable reservoir includes a flared narrowing therein.
8. A solder structure according to Claim 4 wherein the solder wettable reservoir includes a two branches that join at a junction with the junction being between the two branches and the connection with the solder wettable pad, wherein each branch narrows by at least 20% at the junction therebetween.
9. A solder structure according to Claim 4 wherein the solder wettable reservoir includes a bight therein wherein the bight includes an opening at least 2.5 times a radius of curvature of the bight.
10. A solder structure according to Claim 1 further comprising: first and second solder wettable reservoirs connected to opposing ends of the solder wettable pad.
11. A solder structure according to Claim 10 wherein the connections of the solder wettable reservoirs to the solder wettable pad are separated by the length of the solder wettable pad parallel to the edge of the substrate.
12. A solder structure according to Claim 10 wherein portions of the first and second solder wettable reservoirs connected to the solder wettable pad have respective widths that are less than the width of the solder wettable pad.
13. A solder structure according to Claim 1 further comprising: a second substrate adjacent the edge of the first electronic substrate, wherein the first and second substrates are not parallel and wherein the solder bump is connected to the second substrate.
14. A solder structure according to Claim 13 wherein the first and second substrates are substantially orthogonal with respect to each other.
15. A solder structure according to Claim 1 wherein the substrate comprises a microelectronic die.
16. A solder structure according to Claim 1 wherein the solder wettable pad and the solder bump comprise different materials.
17. A method of forming a solder structure, the method comprising: providing a wafer including a plurality of die therein; forming a solder wettable pad on at least one of the die adjacent an edge of the die, the solder wettable pad having a length parallel to the edge of the die and a width perpendicular to the edge of the die wherein the length parallel to the edge of the die is greater than the width perpendicular to the edge of the die; forming a solder bump on the solder wettable pad; after forming the solder bump on the solder wettable pad, separating the die from the wafer along the edge of the die; and after separating the die from the wafer, reflowing the solder bump on the solder wettable pad so that the solder bump extends laterally from the solder wettable pad toward the edge of the die.
18. A method according to Claim 17 wherein the solder structure extends laterally from the solder wettable pad beyond the edge of the die.
19. A method according to Claim 17 wherein the solder structure extends laterally from the solder wettable pad to the edge of the die.
20. A method according to Claim 17 wherein forming the solder bump comprises at least one of plating solder, evaporating solder, jetting solder, and/or applying solder paste.
21. A method according to Claim 17 wherein before reflowing the solder bump, the solder bump is set back from the edge of the die by at least about 20 microns, and wherein after reflowing the solder bump, the solder bump extends at least to within about 10 microns of the edge of the die.
22. A method according to Claim 17 further comprising: after reflowing the solder bump, bonding the solder bump with a substrate adjacent the edge of the die.
23. A method according to Claim 22 wherein the die and the substrate are non-parallel.
24. A method according to Claim 22 wherein the die and the substrate are substantially orthogonal.
25. A method according to Claim 17 further comprising: forming at least one solder wettable reservoir connected to the solder wettable pad, the solder wettable reservoir having a width at a connection with the solder wettable pad that is less than the width of the solder wettable pad; wherein forming the solder bump further comprises forming solder on the at least one solder wettable reservoir.
26. A method according to Claim 25 wherein reflowing the solder bump includes causing solder to flow from the solder wettable reservoir to the solder wettable pad.
27. A method according to Claim 25 wherein the width of the solder wettable pad is at least 10% greater that a greatest width of the solder wettable reservoir.
28. A method according to Claim 25 wherein an angle of a junction between the solder wettable pad and the solder wettable reservoir comprises an acute angle.
29. A method according to Claim 25 wherein the solder wettable reservoir includes a flared narrowing therein.
30. A method according to Claim 25 wherein the solder wettable reservoir includes a two branches that join at a junction with the junction being between the two branches and the connection with the solder wettable pad, wherein each branch narrows by at least 20% at the junction therebetween.
31. A method according to Claim 25 wherein the solder wettable reservoir includes a bight therein wherein the bight includes an opening at least 2.5 times a radius of curvature of the bight.
32. A method according to Claim 17 further comprising: forming first and second solder wettable reservoirs connected to opposing ends of the solder wettable pad.
33. A method according to Claim 32 wherein the connections of the solder wettable reservoirs to the solder wettable pad are separated by the length of the solder wettable pad parallel to the edge of the substrate.
34. A method according to Claim 32 wherein portions of the first and second solder wettable reservoirs connected to the solder wettable pad have respective widths that are less than the width of the solder wettable pad.
35. A method according to Claim 17 wherein the die comprises a microelectronic die.
36. A method according to Claim 17 wherein the solder wettable pad and the solder bump comprise different materials.
37. A method according to Claim 17 wherein the solder wettable pad has an oval shape.
38. A method according to Claim 17 wherein the solder wettable pad has a flat side adjacent the edge of the die.
39. A method of forming a solder structure, the method comprising: forming a solder wettable pad on a substrate adjacent an edge of the substrate, the solder wettable pad having a length parallel to the edge of the substrate and a width peφendicular to the edge of the substrate wherein the length parallel to the edge of the substrate is greater than the width peφendicular to the edge of the substrate; and forming a solder bump on the solder wettable pad wherein the solder bump extends laterally from the solder wettable pad at least to within about 10 microns of the edge of the substrate.
40. A method according to Claim 39 wherein the solder bump extends laterally from the solder wettable pad to the edge of the substrate.
41. A method according to Claim 39 wherein the solder bump extends laterally from the solder wettable pad beyond the edge of the substrate.
42. A method according to Claim 39 further comprising: forming at least one solder wettable reservoir connected to the solder wettable pad, the solder wettable reservoir having a width at a connection with the solder wettable pad that is less than the width of the solder wettable pad.
43. A method according to Claim 39 further comprising: forming first and second solder wettable reservoirs connected to opposing ends of the solder wettable pad.
44. A method according to Claim 43 wherein the connections of the solder wettable reservoirs to the solder wettable pad are separated by the length of the solder wettable pad parallel to the edge of the substrate.
45. A method according to Claim 43 wherein portions of the first and second solder wettable reservoirs connected to the solder wettable pad have respective widths that are less than the width of the solder wettable pad.
46. A method according to Claim 39 further comprising: bonding the solder bump to a second substrate adjacent the edge of the first electronic substrate, wherein the first and second substrates are not parallel.
> 47. A method according to Claim 46 wherein the first and second substrates are substantially orthogonal with respect to each other.
48. A method according to Claim 39 wherein the substrate comprises a microelectronic die.
49. A method according to Claim 39 wherein the solder wettable pad and the solder bump comprise different materials.
50. A method according to Claim 39 wherein the solder wettable pad is set back from the edge of the substrate by at least about 20 microns.
51. A solder structure comprising: a substrate; a solder wettable pad on the substrate adjacent an edge of the substrate, wherein the solder wettable pad has a pad surface opposite the substrate and pad sidewalls between the pad surface and the substrate; and a solder bump on the solder wettable pad wherein the solder bump extends on portions of the pad sidewalls adjacent the edge of the substrate and wherein portions of the pad sidewalls opposite the edge of the substrate are free of the solder bump.
52. A solder structure according to Claim 51 wherein portions of the solder bump extend laterally to the edge of the substrate.
53. A solder structure according to Claim 52 wherein portions of the solder bump extend laterally beyond the edge of the substrate.
54. A solder structure according to Claim 51 wherein portions of the solder bump extend laterally at least to within about 10 microns of the edge of the substrate.
55. A solder structure according to Claim 54 wherein the solder wettable pad is set back from the edge of the substrate by at least about 20 microns.
56. A solder structure according to Claim 51 further comprising: a solder non- wettable material on portions of the pad sidewalls opposite the edge of the substrate.
57. A solder structure according to Claim 56 wherein the solder non- wettable material comprises an oxide.
58. A method of forming a solder structure, the method comprising: forming a solder wettable pad on a substrate adjacent an edge of the substrate, wherein the solder wettable pad has a pad surface opposite the substrate and pad sidewalls between the pad surface and the substrate; and forming a solder bump on the solder wettable pad wherein the solder bump extends on portions of the pad sidewalls adjacent the edge of the substrate and wherein portions of the pad sidewalls opposite the edge of the substrate are free of the solder bump.
59. A method according to Claim 58 wherein portions of the solder bump extend laterally to the edge of the substrate.
60. A method according to Claim 59 wherein portions of the solder bump extend laterally beyond the edge of the substrate.
61. A method according to Claim 58 wherein portions of the solder bump extend laterally at least to within about 10 microns of the edge of the substrate.
62. A method according to Claim 58 further comprising: forming a solder non- wettable material on portions of the pad sidewalls opposite the edge of the substrate.
63. A method according to Claim 62 wherein the solder non- wettable material comprises an oxide.
64. A method of forming a solder structure, the method comprising: providing a wafer including a plurality of die therein; forming a solder wettable pad on at least one of the die adjacent an edge of the die, wherein the solder wettable pad has a pad surface opposite the substrate and pad sidewalls between the pad surface and the substrate; forming a solder bump on the solder wettable pad; after forming the solder bump on the solder wettable pad, separating the die from the wafer along the edge of the die; and after separating the die from the wafer, reflowing the solder bump on the solder wettable pad so that the solder bump extends on portions of the pad sidewalls adjacent the edge of the die and so that portions of the pad sidewalls opposite the edge of the die are free of the solder bump.
65. A method according to Claim 64 wherein the solder bump is maintained within the edge of the die before reflowing the solder bump and wherein portions of the solder bump extend laterally beyond the edge of the substrate after reflowing the solder bump.
66. A method according to Claim 64 wherein the solder bump is maintained within the edge of the die before reflowing the solder bump and wherein portions of the solder bump extend laterally to the edge of the substrate after reflowing the solder bump.
67. A method according to Claim 64 wherein before reflowing the solder bump, the solder bump is set back from the edge of the die by at least about 20 microns, and wherein after reflowing the solder bump, the solder bump extends at least to within about 10 microns of the edge of the die.
68. A method according to Claim 64 wherein the solder bump is maintained within the edge of the die before reflowing the solder bump and wherein portions of the solder bump extend laterally to the edge of the substrate after reflowing the solder bump.
69. A method according to Claim 64 further comprising: before reflowing the solder bump, forming a solder non-wettable material on portions of the pad sidewalls opposite the edge of the substrate.
70. A method according to Claim 69 wherein the solder non-wettable material comprises an oxide.
71. A solder structure comprising:
, a substrate; a solder wettable pad on the substrate adjacent an edge of the substrate, the solder wettable pad having a length parallel to the edge of the substrate and a width peφendicular to the edge of the substrate wherein the length parallel to the edge of the substrate is greater than the width peφendicular to the edge of the substrate; and a solder bump on the solder wettable pad wherein the solder bump extends laterally from the solder wettable pad beyond the edge of the substrate.
72. A solder structure according to Claim 71 further comprising: at least one solder wettable reservoir connected to the solder wettable pad, the solder wettable reservoir having a width at a connection with the solder wettable pad that is less than the width of the solder wettable pad.
73. A solder structure according to Claim 71 further comprising: first and second solder wettable reservoirs connected to opposing ends of the solder wettable pad wherein the connections of the solder wettable reservoirs to the solder wettable pad are separated by the length of the solder wettable pad parallel to the edge of the substrate.
74. A solder structure according to Claim 73 wherein portions of the first and second solder wettable reservoirs connected to the solder wettable pad have respective widths that are less than the width of the solder wettable pad.
75. A solder structure according to Claim 71 further comprising: a second substrate adjacent the edge of the first electronic substrate, wherein the first and second substrates are not parallel and wherein the solder bump is connected to the second substrate.
76. A solder structure according to Claim 71 wherein the substrate comprises a microelectronic die.
77. A method of forming A solder structure, the method comprising: providing a wafer including a plurality of die therein; forming a solder wettable pad on at least one of the die adjacent an edge of the die, the solder wettable pad having a length parallel to the edge of the die and a width peφendicular to the edge of the die wherein the length parallel to the edge of the die is greater than the width peφendicular to the edge of the die; plating a solder structure on the solder wettable pad; after plating the solder structure on the solder wettable pad, separating the die from the wafer along the edge of the die; and after separating the die from the wafer, reflowing the solder structure on the solder wettable pad so that the solder structure extends laterally from the solder wettable pad beyond the edge of the die.
78. A method according to Claim 77 further comprising: after reflowing the solder structure, bonding the solder structure with a substrate adjacent the edge of the die.
PCT/US2004/033946 2003-10-14 2004-10-14 Solder structures for out of plane connections and related methods WO2005039261A2 (en)

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WO2005039261A3 (en) 2005-08-25
US20060138675A1 (en) 2006-06-29
US20050136641A1 (en) 2005-06-23
US7049216B2 (en) 2006-05-23

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