WO2005041277A1 - 照明光学装置及び投影露光装置 - Google Patents
照明光学装置及び投影露光装置 Download PDFInfo
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- WO2005041277A1 WO2005041277A1 PCT/JP2004/015853 JP2004015853W WO2005041277A1 WO 2005041277 A1 WO2005041277 A1 WO 2005041277A1 JP 2004015853 W JP2004015853 W JP 2004015853W WO 2005041277 A1 WO2005041277 A1 WO 2005041277A1
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- illumination
- light
- illumination light
- optical system
- polarization
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Definitions
- the present invention relates to illumination technology and exposure technology used in lithography for manufacturing various devices such as semiconductor integrated circuits (LSI etc.), imaging devices, or liquid crystal displays, and more specifically to a mask pattern.
- the present invention relates to an illumination technique and an exposure technique for illuminating the light with light of a predetermined polarization state.
- the present invention also relates to a device manufacturing technique using the exposure technique.
- a reticle (or a photomask etc.) is drawn as a mask drawn by proportionately expanding the pattern to be formed by about 4 to 15 times.
- a method is used in which the pattern of) is reduced and exposed and transferred onto a wafer (or a glass plate or the like) as a substrate to be exposed (photosensitive material) via a projection optical system.
- projection exposure apparatuses such as a stationary exposure type such as a stepper and a scanning exposure type such as a scanning stepper are used.
- the resolution of the projection optical system is proportional to the exposure wavelength divided by the numerical aperture (NA) of the projection optical system.
- the numerical aperture (NA) of the projection optical system is obtained by multiplying the sine (sin) of the maximum incident angle of the illumination light for exposure onto the wafer by the refractive index of the medium through which the luminous flux passes.
- the exposure wavelength of a projection exposure apparatus has been further shortened.
- the main exposure wavelength is 248 mm of KrF excimer laser, but 193 nm of shorter wavelength ArF excimer laser is also in the stage of practical use.
- NA of the current state-of-the-art projection optical system is about 0.8.
- the pattern to be transferred is transferred.
- a method using a so-called phase shift reticle, or so-called super resolution such as annular illumination, dipole illumination, and quadrupole illumination that controls the incident angle distribution of illumination light to the reticle to a predetermined distribution.
- the technology is also put to practical use.
- the annular illumination limits the incident angle range of the illumination light to the reticle to a predetermined angle, that is, the distribution of the illumination light in the pupil plane of the illumination optical system is centered on the optical axis of the illumination optical system.
- a predetermined annular zone region it is effective to improve the resolution and the depth of focus (see, for example, Japanese Patent Application Laid-Open No. 61-91662).
- the incident direction of the illumination light when the pattern on the reticle, which is not present only in the incident angle range, is a pattern having a specific directionality, the incident direction of the illumination light also corresponds to the directionality of the pattern.
- the contrast of the transferred image is obtained by setting the illumination light to a linearly polarized light having a polarization direction (electric field direction) in the direction orthogonal to the periodic direction of the pattern, ie, in the direction parallel to the longitudinal direction of the pattern.
- a polarization direction electric field direction
- the polarization direction of the illumination light is made to coincide with the circumferential direction in the annular zone in which the illumination light is distributed on the pupil plane of the illumination optical system.
- Patent Document 1 Japanese Patent Application Laid-Open No. 5-109601
- Non-Patent Document 1 Thimothy A. Brunner, et al .: High NA Lithographic imaging at Brewster's angel ”, SPIE (US) Vol. 4691, pp. 1-24 (2002)
- the polarization state of the illumination light is linearly polarized so as to substantially coincide with the circumferential direction of the annular zone. If this happens, the loss of the amount of illumination light will increase, and there is a problem that the illumination efficiency will decrease.
- the illumination light emitted is uniform linearly polarized light. If this is guided to the reticle while maintaining its original polarization state, the reticle is illuminated with uniform linearly polarized light, so that it coincides with the circumferential direction of the annular zone of the pupil plane of the illumination optical system as described above. It is impossible to realize linearly polarized light, and it goes without saying! /.
- the linearly polarized light emitted from the light source is once converted into randomly polarized light, and then the polarization filter, the polarized beam splitter, etc. It has been necessary to adopt a method or the like of selecting a desired polarization component from illumination light having random polarization power by using the polarization selection element of the above.
- the energy of the randomly polarized illumination light contained in a predetermined linear polarization component that is, only about half of the energy can be used as illumination light for the reticle, so that the amount of illumination light can be reduced.
- the throughput (throughput) of the exposure apparatus decreases, which causes a large loss and, consequently, a loss of exposure power to the wafer.
- the polarization state of the illumination light in the 2-pole or 4-pole region is set to a predetermined state. There was a problem that the lighting efficiency decreased when trying to set it.
- the present invention has been made in view of such problems, and provides an exposure technique capable of reducing the light quantity loss when illuminating a mask such as a reticle with illumination light of a predetermined polarization state. It is the first purpose.
- the reduction of the illumination light quantity can be reduced. It is a second object of the present invention to provide an illumination technology and an exposure technology capable of improving resolution etc. with almost no decrease in processing capacity.
- Another object of the present invention is to provide a device manufacturing technology capable of manufacturing a high performance device with high processing power by using the above-mentioned exposure technology.
- Bracketed reference numerals attached to the following respective elements of the present invention correspond to the configuration of the embodiment of the present invention described later. Although each symbol is merely an example of the element, each element Not limited to the configuration of that embodiment.
- a first projection exposure apparatus comprises an illumination optical system (ILS) for irradiating illumination light from a light source (1) onto a first object (R), and an image of a pattern on the first object as a second object (W) a projection exposure apparatus having a projection optical system (25) for projecting onto, the light source generating the illumination light in a substantially single polarization state, the illumination optical system It has a plurality of birefringent members (12, 13) arranged along the traveling direction of the illumination light, and the direction of the phase advancing axis of at least one of the plurality of birefringent members is the other Of the illumination light, the specific illumination light irradiated to the first object in the specific incident angle range is different from the direction of the fast axis of the birefringence member in the polarization state mainly composed of S-polarization. It is light.
- ILS illumination optical system
- a first illumination optical device is an illumination optical device for illuminating the first object (R) with illumination light from a light source (1), and along the traveling direction of the illumination light
- the direction of the fast axis of at least one of the plurality of birefringent members (12, 13) disposed and the direction of the fast axis of at least one of the plurality of birefringent members is the fast phase of the other birefringent member
- the specific illumination light to be emitted to the first object at a specific incident angle range is It is light of a polarized state mainly composed of polarized light.
- the illumination light having the light source power emitted therefrom has the plurality of birefringences.
- the polarization state after passing through the member can be, for example, in a ring-shaped zone centered on the optical axis mainly polarized in the circumferential direction centered on the optical axis.
- the exit surfaces of the plurality of birefringent members for example, at a position close to the pupil plane of the illumination optical system, the illumination light (specific illumination light) that has passed through the annular region is With almost no light loss, the first object is illuminated in a predetermined polarization state mainly composed of s-polarization.
- the first object may have a light flux limiting member (9a, 9b) for limiting the illumination light emitted to the first object to the specific illumination light.
- a light flux limiting member (9a, 9b) for limiting the illumination light emitted to the first object to the specific illumination light.
- This causes the first object to be illuminated at substantially annular illumination conditions.
- the illumination light substantially S-polarized on the first object with this annular illumination, rays arranged at a fine pitch in any direction on the first object can be obtained. Since the projection image of the n &'space pattern is mainly imaged by illumination light whose polarization direction is parallel to the longitudinal direction of the line pattern, imaging characteristics such as contrast, resolution, and depth of focus are improved.
- the light flux limiting member may further limit the incident direction of the illumination light emitted to the first object to a plurality of specific substantially discrete directions.
- illumination is performed by two-pole illumination, four-pole illumination, etc., so that the imaging characteristics of the line-and-space pattern arranged at a fine pitch in a predetermined direction are improved.
- a second projection exposure apparatus comprises an illumination optical system (ILS) for illuminating the first object (R) with illumination light from a light source (1) and an image of a pattern on the first object
- ILS illumination optical system
- a projection exposure apparatus comprising a projection optical system (25) for projecting onto a second object (W), the light source producing the illumination light in a substantially single polarization state, the illumination optical system Has a plurality of birefringent members (12, 13) disposed along the traveling direction of the illumination light, and a direction of a phase advance axis of at least one of the plurality of birefringent members.
- the illumination light passing through at least a partial area in the specific annular area (36) which is the annular area is polarized in the circumferential direction of the specific annular area. It is those wherein the polarization state consisting primarily of linear polarization with.
- the light source power of the plurality of birefringent members is also specified as the specific annular zone region among the emitted illumination light.
- a state in which at least a part of the polarization state of the illumination light passing through is mainly composed of linearly polarized light whose polarization direction is the circumferential direction of the specific annular zone, with almost no light loss (predetermined polarization State).
- the light flux limiting member may further limit the light flux to a plurality of substantially discrete regions within the particular annular zone region. In these cases, it is possible to realize ring-shaped illumination, 2-pole illumination, 4-pole illumination, etc., which hardly reduce the amount of illumination light.
- the light flux limiting member is, for example, the light source (1) and the plurality of birefringent members (12 , 13) and includes a diffractive optical element.
- a diffractive optical element By using a diffractive optical element, light quantity loss can be further reduced.
- At least one member of the plurality of birefringent members is provided between the linearly polarized light component parallel to the fast axis and the linearly polarized light component parallel to the slow axis of the transmitted light.
- An inhomogeneous waveplate (12, 13) in which the phase difference between polarizations varies nonlinearly with the position of the member.
- the non-uniform wavelength plate has rotational symmetry twice around the optical axis of the illumination optical system with respect to the particular illumination light or the illumination light distributed in the particular annular zone region.
- a first non-uniform wave plate (12) may be included to provide interphase retardation.
- the non-uniform wavelength plate has a phase difference between polarized light having rotational symmetry about the optical axis of the illumination optical system with respect to the particular illumination light or the illumination light distributed in the particular annular zone region. It may further comprise a second non-uniform wave plate (13) to provide.
- the directions of the fast axes are mutually offset by 45 ° with the optical axis of the illumination optical system as the rotation center. is there. This facilitates control of the polarization state of the illumination light after passing through the two nonuniform wavelength plates.
- it may further include an optical integrator (14) disposed between the plurality of birefringent members and the first object. This improves the uniformity of the illuminance distribution on the first object.
- it may further include a zoom optical system disposed between the plurality of birefringent members and the optical integrator, a conical prism group (41, 42) having a variable distance, or a polyhedral prism group.
- a zoom optical system disposed between the plurality of birefringent members and the optical integrator, a conical prism group (41, 42) having a variable distance, or a polyhedral prism group.
- the Optika Nole integrator is, for example, a fly's eye lens.
- polarization control mechanism (4) disposed between the light source and the plurality of birefringent members to convert the polarization state of the illumination light as well as the light source power. According to this, The polarization state of the illumination light of the light source power can be converted into a polarization state suitable for a plurality of birefringent members without loss of light quantity.
- a rotation mechanism may be provided to make some or all of the plurality of birefringent members rotatable about the optical axis of the illumination optical system.
- the illumination light from the light source can be supplied to the birefringent member in a polarization state suitable for the birefringent member.
- a plurality of sets of the plurality of birefringence members can be provided, and a plurality of the plurality of sets of the plurality of birefringence members can be exchangeably arranged in the illumination optical system. This can correspond to various patterns to be transferred.
- an illumination optical system for irradiating illumination light from a light source (1) onto a first object (R), and a pattern on the first object
- a projection optical system for projecting the image of the light onto the second object (W), the light source producing the illumination light in a substantially single polarization state
- the illumination optical system has diffractive optical elements (9a, 9b) and birefringent members (12, 13) disposed in order along the traveling direction of the illumination light.
- the second illumination optical device is an illumination optical device that illuminates the first object with illumination light of light source power, and is disposed in order along the traveling direction of the illumination light. It has an element and a birefringence member.
- the birefringent member by using the birefringent member, it is possible to efficiently illuminate the first object in a predetermined polarization state having, for example, S polarized light as a main component. Further, the light quantity loss can be extremely reduced by restricting the light quantity distribution of the illumination light incident on the birefringent member to a ring shape or the like by using the diffractive optical element.
- the diffractive optical element substantially limits the illumination light irradiated to the first object to the specific illumination light irradiated to the first object in a specific incident angle range.
- the birefringent member makes the specific illumination light a light of polarization state mainly composed of S polarized light.
- the diffractive optical element may further restrict the incident direction of the illumination light irradiated to the first object to a plurality of specific substantially discrete directions.
- the diffractive optical element is configured to illuminate the illumination light in the pupil plane in the illumination optical system.
- the birefringent member is designed to deflect the luminous flux in the circumferential direction. It is also possible to use a polarization state whose main component is linearly polarized light.
- the diffractive optical element may further limit the light flux to a plurality of substantially discrete areas within the particular annular zone area.
- the image of the pattern of the mask (R) as the first object is a photosensitive member as the second object (W (W) ) Is exposed.
- the first object can be illuminated by annular illumination, 2-pole illumination, 4-pole illumination or the like, and the polarization state of the illumination light incident on the first object is substantially S-polarized. Can. Therefore, it is possible to transfer a pattern formed with a fine pitch in a predetermined direction on the mask with good imaging characteristics, with almost no light loss.
- a device manufacturing method is a device manufacturing method including a lithography process, in which a pattern is transferred onto a photosensitive member using the exposure method of the present invention. According to the present invention, a pattern can be transferred with high throughput and high imaging characteristics.
- the polarization state of the illumination light is controlled using a plurality of birefringence members, or a diffractive optical element and a birefringence member arranged in order along the traveling direction of the illumination light are used. Since the polarization state of the illumination light is controlled to be used, it is possible to reduce the light quantity loss when illuminating the first object (mask) with the illumination light of the predetermined polarization state.
- At least one of the specific annular zones can be substantially reduced in illumination light quantity when illuminating the first object with annular illumination, 2-pole illumination, 4-pole illumination, etc.
- the polarization state of the illumination light passing through the area of the part can be set to a state in which the linear polarization parallel to the circumferential direction of the specific annular area is the main component.
- the imaging characteristics at the time of exposing a pattern in which a line pattern having a longitudinal direction along the direction of the linearly polarized light on the first object is arranged at a fine pitch are improved. Therefore, it is possible to provide an illumination optical apparatus, a projection exposure apparatus, and an exposure method that can realize improvement of imaging characteristics without a decrease in throughput (throughput).
- FIG. 1 is a partially cutaway view showing a schematic configuration of a projection exposure apparatus according to an example of an embodiment of the present invention.
- FIG. 2 (A) is a view of the birefringent member 12 in FIG. 1 seen in the + Y direction
- FIG. 2 (B) is a cross-sectional view taken along line AA 'in FIG.
- FIG. 3 (A) is a view of the birefringence member 13 in FIG. 1 seen in the + Y direction
- FIG. 3 (B) is a cross-sectional view taken along line BB 'of FIG. 3 (A).
- FIG. 4 (A) is a view showing an example of the relationship between the phase difference ⁇ 1 of the first birefringent member 12 and the position X
- FIG. 4 (B) is a diagram of the second birefringent member 13.
- FIG. 4C is a view showing an example of the polarization state of the illumination light emitted from the second birefringent member 13.
- FIG. 4C is a view showing an example of the relationship between the polarization phase difference ⁇ 2 and the position XZ.
- FIG. 5 is a view showing an example of the polarization state of the illumination light emitted from the first birefringent member 12.
- FIG. 6 (A) shows another example of the relationship between the polarization retardation ⁇ 1 and the position X in the first birefringent member 12, and FIG. 6 (B) shows the second birefringent member.
- FIG. 6 (C) shows another example of the polarization state of the illumination light emitted from the second birefringent member 13.
- FIG. 6 (C) shows another example of the relationship between the inter-polarization retardation ⁇ 2 and the position XZ in 13.
- FIG. 7 is a plan view showing an example of the fine periodic pattern PX formed on the reticle R of Fig. 1, and Fig. 7 (B) is the pattern of Fig. 7 (A) under predetermined conditions.
- FIG. 7 (C) shows the conditions of annular illumination for illuminating the pattern PX of FIG. 7 (A), showing the distribution of diffracted light formed in the pupil plane 26 of the projection optical system when illuminated.
- Fig. 8 is a perspective view simply showing the relationship between the pupil plane 15 of the illumination optical system ILS in Fig. 1 and the reticle R, and Fig. 8 (B) is a part of Fig. 8 (A). 8 (C) is a view of a part of FIG. 8 (A) in the ⁇ X direction.
- FIG. 9 shows an embodiment of the present invention, which is disposed between the birefringent members 12 and 13 of FIG. 1 and the fly's eye lens 14 in order to make the radius of the specific annular zone variable. It is a figure which shows several cone prisms which can be done.
- FIG. 11 is a view showing an example of a lithography process for manufacturing a semiconductor device using the projection exposure apparatus of the embodiment of the present invention.
- R Reticle
- W Wafer
- ILS illumination optical system
- AX2 illumination system optical axis
- nf phase advance axis
- ns slow axis
- 1 exposure light source
- 4 polarization control member
- 9a, 9b diffractive optical element
- 12 ... first birefringent member
- 13 ... second birefringent member
- 14 ⁇ ⁇ fly eye lens
- 25 ⁇ ⁇ projection optical system
- 41, 42 Conical prism
- FIG. 1 is a partially cutaway view showing a schematic configuration of the projection exposure apparatus of the present embodiment.
- the projection exposure apparatus of the present embodiment is provided with an illumination optical system ILS and a projection optical system 25.
- the former illumination optical system ILS includes a plurality of optical members arranged along the optical axis (illumination system optical axis) AX1, AX2, AX3 from the exposure light source 1 (light source) to the condenser lens 20 (described in detail later)
- the illumination field (exposure light) for exposure as the exposure beam from the exposure light source 1 illuminates the illumination field of the pattern surface (reticle surface) of the reticle R as the mask with a uniform illuminance distribution.
- the latter projection optical system 25 forms an image of the pattern in the illumination field of the reticle R reduced by the projection magnification M (M is a reduction magnification such as 1Z4 or 1Z5) on the exposure substrate ( Project on the exposed area on one shot area on Weno, W coated with a photoresist as a substrate or a photosensitive body.
- M is a reduction magnification such as 1Z4 or 1Z5
- the reticle R and the wafer W can also be regarded as a first object and a second object, respectively.
- Ueno, W is, for example, a disk-shaped substrate having a diameter of about 200 to 300 mm, such as a semiconductor (such as silicon) or S OK silicon on insulator.
- the projection optical system 25 of this example is, for example, a dioptric system, but a catadioptric system or the like can also be used.
- the Z axis is parallel to the optical axis AX4 of the projection optical system 25 and in a plane (XY plane) perpendicular to the Z axis
- the Y axis is taken along the scanning direction of the reticle R and the wafer W (the direction parallel to the paper of FIG. 1) during scanning exposure
- the X axis is taken along the non-scanning direction (the direction perpendicular to the paper of FIG. 1). Take it and explain.
- the illumination field of the reticle R is an elongated region in the X direction which is the non-scanning direction
- the exposure region on the wafer W is an elongated region conjugate to the illumination field.
- the optical axis AX4 of the projection optical system 25 coincides with the illumination system optical axis AX3 on the reticle R.
- the reticle R on which the pattern to be exposed and transferred is formed is held by suction on the reticle stage 21.
- the reticle stage 21 moves in the Y direction on the reticle base 22 at a constant speed and corrects the synchronization error.
- the reticle R is scanned by finely moving in the direction of rotation around the X, Y, and Z axes.
- the position in the X direction and Y direction of the reticle stage 21 and the rotation angle are measured by a movable mirror 23 and a laser interferometer 24 provided thereon.
- the reticle stage drive system 32 controls the position and velocity of the reticle stage 21 via a drive mechanism (not shown) such as a linear motor.
- a reticle alignment reticle (not shown) for reticle alignment is disposed above the periphery of the reticle R.
- the wafer W is held by suction on the wafer stage 27 via a wafer holder (not shown), and the wafer stage 27 can be moved at a constant speed in the Y direction onto the wafer base 30. It is placed so that it can be moved stepwise in the X and Y directions.
- the wafer stage 27 also incorporates a Z leveling mechanism for aligning the surface of the wafer W with the image plane of the projection optical system 25 based on the measurement values of an autofocus sensor (not shown). The position of the wafer stage 27 in the X and Y directions and the rotation angle are measured by the movable mirror 28 and the laser interferometer 29 provided thereon.
- the wafer stage drive system 33 controls the position and speed of the wafer stage 27 via a drive mechanism (not shown) such as a linear motor based on the measurement value and control information of the main control system 34. Also, in the vicinity of the projection optical system 25, for example, the alignment of an FIA (Field Image Alignment) method by an off-axis method for detecting the position of the alignment mark on the wafer W for wafer alignment. Sensor 31 is deployed!
- FIA Field Image Alignment
- alignment of reticle R is performed by the reticle alignment microscope described above, and alignment performed on the wafer W with the circuit pattern in the previous exposure step. Alignment of the wafer W is performed by detecting the position of the fork mark with the alignment sensor 31. Then the illumination field on the reticle R With the illumination light IL illuminated, the reticle stage 21 and Ueno, and the stage 27 are driven to synchronously scan the reticle R and one shot area on the wafer W in the Y direction, and the light emission of the illumination light IL. Is stopped, and the operation of stepping the wafer W in the X direction and the Y direction by driving the wafer stage 27 is repeated.
- the ratio of scanning speeds of the reticle stage 21 and the wafer stage 27 at the time of the synchronous scanning is the same as that of the projection optical system 25 in order to maintain the imaging relationship between the reticle R and the wafer W through the projection optical system 25. It is equal to the projection magnification M.
- an ArF (argon fluorine) excimer laser (wavelength 193 nm) is used as the exposure light source 1 of this example.
- a KrF (krypton fluorine) excimer laser (wavelength 248 nm), an F (fluorine molecule) laser (wavelength 157 nm), or a Kr (tal
- a laser light source such as a 2 2 -pton molecule laser (wavelength: 146 nm) can also be used.
- These laser light sources are narrow banded lasers or wavelength-selected lasers, and the illumination light IL emitted from the exposure light source 1 is the above-mentioned narrow band or By the wavelength selection, it is in a polarization state mainly composed of linearly polarized light.
- the illumination light IL immediately after being emitted from the exposure light source 1 is described to be mainly composed of linearly polarized light whose polarization direction (direction of the electric field) coincides with the X direction in FIG. Do.
- the illumination light IL emitted from the exposure light source 1 is incident on a polarization control member 4 (details will be described later) as a polarization control mechanism via the relay lenses 2 and 3 along the illumination system optical axis AX1.
- the illumination light IL emitted from the polarization control member 4 passes through the zoom optical system (5, 6) which is also a combined force of the concave lens 5 and the convex lens 6, and is reflected by the mirror 7 for bending the optical path to the illumination system optical axis AX2.
- the light enters along the diffractive optical element (DOE) 9a.
- the diffractive optical element 9a has a phase-type diffraction grating power, and the incident illumination light IL is diffracted and travels in a predetermined direction.
- the diffraction angle and direction of each diffracted light from the diffractive optical element 9a as the light beam limiting member is determined by the position of the illumination light IL on the pupil plane 15 of the illumination optical system ILS, and the illumination light IL This corresponds to the incident angle and direction to the reticule R.
- a plurality of diffractive optical elements 9 a and another diffractive optical element 9 b having a different diffraction function are arranged on the turret 8. There is. Then, for example, the member 8 is driven by the optical system 10 under the control of the main control system 34 to load the diffractive optical element 9a or the like at an arbitrary position on the member 8 at a position on the illumination system optical axis AX2.
- the incident angle range and direction of the illumination light to the reticle R can be set to a desired range.
- the incident angle range may be subtly adjusted by moving the concave lens 5 and the convex lens 6 constituting the above-mentioned zoom optical system (5, 6) in the direction of the illumination system optical axis AX1, respectively.
- the illumination light (diffracted light) IL emitted from the diffractive optical element 9a passes through the relay lens 11 along the illumination system optical axis AX2, and the first birefringent member as a plurality of birefringent members of the present invention 12 and the second birefringent member 13 sequentially enter. Details of these birefringent members will be described later.
- a fly's eye lens 14 which is an optical integrator (illumination equalizing member) is disposed.
- the illumination light IL emitted from the fly's eye lens 14 passes through the relay lens 16, the field stop 17 and the condenser lens 18 and reaches the mirror 19 for bending the optical path, and the illumination light IL reflected here is the illumination system optical axis
- the reticle R is illuminated through a condenser lens 20 along AX3. The pattern on the reticle R thus illuminated is projected and transferred onto the wafer W by the projection optical system 25 as described above.
- the field stop 17 may be of a scanning type, and scanning may be performed in synchronization with the scanning of the reticle stage 21 and the wafer stage 27.
- the field stop may be divided into a fixed field stop and a movable field stop.
- the surface on the exit side of the fly's eye lens 14 is located near the pupil plane 15 of the illumination optical system ILS.
- the pupil plane 15 is a reticle R via an optical member (relay lens 16, field stop 17, condenser lenses 18 and 20, and mirror 19) in the illumination optical system IL from the pupil plane 15 to the reticle R.
- the incident angle and the incident direction depend on the position of the light flux on the pupil plane 15.
- the mirrors 7 and 19 for bending the optical path are not essential for optical performance, but When the bright optical system ILS is disposed on a straight line, the overall height (height in the Z direction) of the exposure apparatus is increased, and therefore, it is disposed at a suitable position in the illumination optical system ILS for the purpose of space saving.
- the illumination system optical axis AX1 coincides with the illumination system optical axis AX2 by the reflection of the mirror 7, and the illumination system optical axis AX2 coincides with the illumination system optical axis AX3 by the reflection of the mirror 19.
- the first birefringence member 12 is a disk-shaped member which also has birefringence material power such as uniaxial crystal, and its optical axis is in the in-plane direction (a direction parallel to a plane perpendicular to the illumination system optical axis AX2) is there.
- the size (diameter) of the first birefringent member 12 in the in-plane direction is larger than the diameter of the luminous flux of the illumination light IL at the position where the birefringent member 12 is disposed.
- phase advance axis nf which is the axial direction that minimizes the refractive index for linearly polarized light with parallel polarization directions, is obtained from each coordinate axis (X axis and Z axis) at the XZ coordinate, which is the same coordinate axis as in FIG. ° It is turned in the rotated direction.
- the slow axis ns which is the axial direction that maximizes the refractive index for linearly polarized light having a polarization direction parallel to this, is orthogonal to the above-mentioned fast axis nf and is also X and Z axes. It is turned 45 ° from both sides.
- the thickness of the first birefringent member 12 changes in accordance with the X coordinate (position in the X direction) which is not uniform in a plane parallel to the paper surface of FIG. 2 (A).
- Fig. 2 (B) is a cross-sectional view of the birefringent member 12 taken along the line AA 'of Fig. 2 (A).
- the birefringent member 12 has a center in the X direction. It is thin in the illumination system (optical axis) and thick in the periphery.
- the thickness of the first birefringent member 12 is uniform in the Z direction in FIG. 2 (A), and the birefringent member 12 is shaped like a negative cylinder lens as a whole. .
- the polarization direction (that is, the “oscillation direction of the electric field of light”, and the same applies hereinafter) coincides with the direction of the fast axis nf.
- An optical path difference (inter-polarization retardation) occurs between the linearly polarized light component and the linearly polarized light component coinciding with the direction of the slow axis ns.
- the traveling speed of the same polarized light is fast, while for linearly polarized light parallel to the slow axis nS.
- the first birefringent member 12 functions as a first nonuniform wavelength plate in which the interpolarization polarization difference given to the transmitted light differs depending on the place.
- the optical path difference caused by the birefringent member 12 is made an integral multiple of the wavelength by optimizing the thickness of the first birefringent member 12, the phases of the two luminous fluxes can not be substantially distinguished. It is possible to form a state in which there is substantially no optical path difference.
- the thickness T1 of the central portion of the birefringent member 12 is set to such a thickness.
- the thickness TA of the birefringent member 12 is a thickness represented by the following function with respect to the position X in the X direction.
- ⁇ is a proportional coefficient, and the value of ⁇ differs depending on the refractive index difference between the above-mentioned fast axis and slow axis of the birefringent material to be used, as in the thickness T1 of the central portion.
- the refractive index of quartz is the refractive index of the ordinary ray in ArF excimer laser light of wavelength 193 nm: 1.6638, extraordinary ray
- the refractive index of is 1. 6774. From this, the fast axis is the polarization direction of the ordinary ray, and the slow axis is the polarization direction of the extraordinary ray.
- the wavelengths of the ordinary ray and the extraordinary ray in the crystal are 116. OOl nm and 115. 056 nm, respectively, because they are the wavelength in vacuum (193 nm) divided by the respective refractive index.
- the optical path difference is exactly one wavelength or an integral wavelength, it is equivalent to substantially no optical path difference between the two light fluxes. 122.
- the thickness of the crystal for seven wavelengths is 14239 nm according to the calculation of 122.7 ⁇ 193 / 1.6638, which is equivalent to 14.239 m.
- the inter-polarization phase difference ⁇ 1 formed by the first birefringent member 12 is expressed as follows as a function of the position X in the X direction.
- the thickness of the first birefringent member 12 is the distance between the light incident surface 12a and the light emitting surface 12b, and the relationship between the thickness for forming the retardation and the position in the X direction is satisfied.
- the shapes of the entrance surface 12a and the exit surface 12b may be arbitrary. However, in terms of surface shape processing, since it becomes easier to process either of the surfaces as a plane, in fact, as shown in FIG. 2 (B), for example, the injection surface 12b may be a plane. desirable.
- the thickness TA of the entrance surface 12a when the value of the thickness TA at the exit surface 12b is 0 is as TA determined by the equation (1).
- the incident surface 12a may be flat.
- FIG. 4 (A) is a diagram showing the relationship between the polarization phase difference ⁇ P1 (the unit is the wavelength of the illumination light) expressed by equation (2) and the position X.
- FIG. 5 is a diagram showing the polarization state of the illumination light emitted from the first birefringent member 12 of this example, and in FIG. 5 the polarization state of the illumination light distributed at each position on the XZ coordinate is , A line segment centered on each position, a circle, or an ellipse.
- the illumination light is in a polarization state whose main component is linearly polarized light, and the direction of the line segments is its polarization direction. Show. Also, at the position where the ellipse is displayed, the illumination light is in a polarization state mainly composed of elliptical polarization, and in the long side direction of the ellipse, the linear polarization component contained in the elliptical polarization is the largest. Direction is shown. In addition, at the position where the circle is displayed, the illumination light is in a polarization state mainly composed of circular polarization.
- the first birefringent member 1 is at a position separated by ⁇ 1 in the X direction from the center.
- the illumination light IL that emits the exposure light source 1 in FIG. 1 is mainly composed of linearly polarized light polarized in the X direction as described above, and this 1Z2 wavelength plate has its fast axis nf and slow axis ns. , Rotated 45 ° with respect to the X direction, which is the polarization direction (of the illumination light) of the incident light. Therefore, as shown in FIG. 5, the polarization state of the illumination light transmitted near the position separated by ⁇ 1 (reference length) in the X direction from the center of the first birefringent member 12 is the action of this 1Z dual wavelength plate. As a result, the light is converted to a polarization state whose main component is linear polarization in the Z direction.
- the phase difference ⁇ between polarizations is 1 is 0.25, and the first double refractor 12 acts as a so-called 1Z4 wave plate. For this reason, the illumination light transmitted through this portion is converted to a polarization state whose main component is circularly polarized light.
- the illumination light IL having a different polarization state depending on the position where it has passed through the first birefringent member 12 is incident on the second birefringent member 13.
- the second birefringent member 13 is also a disk-shaped member made of a birefringent material.
- FIG. 3A is a view of the second birefringent member 13 of FIG. 1 along the illumination system optical axis AX2 in the + Y direction, which is different from the first birefringent member 12 described above in FIG.
- the fast axis nf of the second birefringent member 13 is set parallel to the Z axis of the XZ coordinate which is the same coordinate axis as in FIG. 1, and the slow axis ns is set parallel to the X axis.
- Ru also in the in-plane direction of the second birefringent member 13
- the size (diameter) is larger than the luminous flux diameter of the illumination light IL at the position where the second birefringent member 13 is disposed.
- FIG. 3 (B) is a cross-sectional view of the second birefringent member 13 taken along the line BB ′ of FIG. 3 (A), and as shown in FIG. 3 (B) It is thin in the vicinity of B) and thick at the right end (near ⁇ ').
- the thickness of the second birefringent member 13 is uniform in the direction orthogonal to the ⁇ direction. Therefore, the second birefringent member 13 also functions as a second nonuniform wavelength plate in which the interpolarization polarization difference given to the transmitted light differs depending on the place.
- j8 is a proportional coefficient, and the value of j8 differs depending on the refractive index difference between the above-mentioned fast axis and slow axis of the birefringent material to be used, as in the thickness T2 of the central portion.
- the thickness T 2 of the central portion is such that the retardation ⁇ 2 of the second birefringent member 13 is 0.25 (the unit is the wavelength of the illumination light), ie, the central portion is a 1Z4 wavelength plate Set to work.
- the retardation between polarizations ⁇ 2 is set to be +0.75 and 0.25, respectively, at positions +1 (reference length) and 1 in the XZ direction. . This means that, with respect to the center, the difference between the polarizations of +0.5 and 0.5 is formed respectively.
- the thickness is set so that the inter-polarization phase difference ⁇ 2 is represented by the following equation.
- FIG. 4B is a diagram showing the relationship between the polarization phase difference ⁇ 2 and the position ⁇ of equation (4). It is.
- FIG. 1 the illumination light of which the polarization state is different according to the position where it has passed through the first birefringence member 12 is converted again by the second birefringence member 13 according to the position. Ru.
- the polarization state of the illumination light IL emitted from the second birefringent member 13 is shown in FIG. 4 (C).
- the display method of FIG. 4C is the same as the display method of FIG. 5 described above, and in FIG. 4C, the polarization state of the illumination light distributed at each position on the XZ coordinate is centered at each position. It is shown as a line segment (linear polarization) or an ellipse (elliptically polarized light).
- the first birefringent member 12 and the second birefringent member 13 are disposed immediately in front of the fly's eye lens 14, and The surface on the light emission side is disposed near the pupil plane 15 in the illumination optical system ILS. Therefore, the first birefringence member 12 and the second birefringence member 13 are disposed substantially equivalently to the pupil drawing 15 in the illumination optical system ILS.
- the outer circle C1 and the inner circle C2 shown in FIG. 4 (C) and FIG. 5 are boundaries of the distribution of illumination light for forming a predetermined annular illumination with respect to the reticle R.
- the radius of each circle CI and C2 is the outer circle C1 in terms of the reference length used in the determination of the thickness profile (thickness distribution) of the first birefringent member 12 and the second birefringent member 13 described above.
- the illumination light emitted from the second birefringent member 13 has an outer circle C1 and an outer circle C1.
- the polarization state is mainly made of linearly polarized light whose polarization direction is the circumferential direction of the specific annular zone 36. Comparing Fig. 4 (C) and Fig. 5, the polarization states of the illumination light on the X axis and the Z axis are almost equal. However, the polarization states at positions away from each other by about 45 ° at each axial force (the upper right, upper left, lower left, lower right positions in Fig. 4 (C) and Fig. 5) are generally circular in FIG.
- Polarized light is converted to linear polarized light in the circumferential direction of the specific annular zone in FIG. 4 (C). This is due to the action of the second birefringent member 13, and the second birefringent member 13 functions as a 1Z4 wave plate in the upper left and lower right regions in FIG. In the upper right region, they each function as a 1Z4 wave plate and an equivalent 3Z4 wave plate.
- the actual radius of the outer circle C1 of the specific annular zone 36 is the numerical aperture (NA) on the reticle R side of the projection optical system 25 in FIG. 1, the illumination optical system ILS It is determined by the focal length of the optical system consisting of the relay lens 16 and the condenser lens 18 and 20 and the coherence factor (illumination .sigma.) To be set, and the radius of the inner circle C2 is a value determined by the ring ratio to be set further. is there. Then, with respect to the condition of the annular illumination, the first birefringence is made such that the polarization direction of the illumination light distributed in the specific annular region 36 coincides with the circumferential direction of the annular region at each position. It goes without saying that the thickness shape of the member 12 and the second birefringent member 13 will be determined.
- NA numerical aperture
- the thickness shape of the first birefringent member 12 and the second birefringent member 13 is determined by proportionally expanding or proportionally reducing the shape in the wedge surface, and Direction) means that the amount of unevenness is not changed.
- the first and second non-uniform wavelength plates which do not reduce the luminous flux cause no loss of light quantity of the illumination luminous flux.
- the polarization direction of the illumination light distributed in the specific annular zone can be made to coincide with the circumferential direction of the annular zone at each position.
- the illumination light which passes through the specific annular area 36 and is irradiated to the reticle R that is, the specific illumination light which is irradiated to the reticle R in a specific incident angle range is polarized. It becomes light of polarization state whose main component is S polarization in the direction perpendicular to the incident plane.
- the contrast, resolution, depth of focus, etc. of the transferred image may be improved due to the periodicity of the pattern to be transferred, etc. Details later).
- FIG. 6 a second embodiment of the first and second birefringent members 12 and 13 in the illumination optical system ILS of FIG. 1 will be described.
- the configurations of the first birefringent member 12 and the second birefringent member 13 are basically the same as those shown in the first embodiment described above. That is, the first birefringence member 12 has the fast axis direction and thickness shape as shown in FIG. 2 (A) and FIG. 2 (B), and the second double refracting member 13 is It has the fast axis direction and thickness as shown in Fig. 3 (A) and Fig. 3 (B). However, in this example, the form of the function related to the thickness of both birefringent members 12 and 13 is changed.
- FIG. 6 (A) corresponds to FIG. 4 (A), and shows the characteristics with respect to the position in the X direction of the inter-polarization retardation ⁇ P1 formed by the first birefringent member 12 in this second embodiment. Show.
- the phase difference ⁇ P1 between polarizations of FIG. 6 (A) is a function including a trigonometric function with respect to the position X as follows.
- phase difference ⁇ PI between polarizations can be realized by representing the thickness TA of the first birefringent member 12 at the position X in the X direction by the following function.
- y is a proportionality factor.
- the center thickness T1 is set to an integral multiple of 14.239 / zm, and the proportional coefficient ⁇ is set to 3.77 m. Just do it.
- the value 3. is a value obtained by multiplying the thickness 14.239 m of the crystal giving the phase difference between polarizations for one wavelength by 0.265 which is a factor of the above equation (5).
- FIG. 6 (B) shows the retardation between polarizations formed by the second birefringent member 13 in the second embodiment.
- phase difference ⁇ 2 between polarizations in FIG. 6 (B) can be expressed as a function including a trigonometric function with respect to the position XZ as follows.
- phase difference ⁇ 2 between polarizations can be realized by expressing the thickness ⁇ of the second birefringent member 13 with respect to the position ⁇ in the ⁇ direction by the following function.
- ⁇ is a proportionality factor. If the second birefringent member 13 is made of quartz, the central thickness ⁇ Set 2 to 14. 239 / zm times (integer + 1Z4) and set the proportionality factor ⁇ to 7. 12 / zm.
- first birefringent member 12 and the second birefringent member 13 have first and second non-uniform wavelength plates, which have different phase differences between polarized light given to transmitted light depending on their locations. To function. Then, the linearly polarized light polarized in the X direction incident on the first birefringence member 12 is converted into a polarization distribution shown in FIG. 6C and emitted from the second birefringence member 13.
- FIG. 6 (C) and FIG. 4 (C) show that the first birefringent member 12 and the second birefringent member 13 of the second embodiment are more
- the polarization state of the illumination light distributed in the specific annular zone 36 surrounded by the outer circle C1 and the inner circle C2 is converted into a linearly polarized light parallel to the circumferential direction than that shown in the first embodiment. , Can be closer.
- first birefringent member 12 and the second birefringent member 13 of the second embodiment adopt a thickness shape (that is, a surface shape) determined by a high-order function such as a trigonometric function, This is because polarization control can be performed with higher accuracy.
- first birefringence member 12 and the second birefringence member 13 shown in the first embodiment have a function force of up to at most five orders, the force which is slightly inferior in polarization control characteristics is obtained. It has the advantages of easy processing and low manufacturing cost.
- the surface shape of the first birefringence member 12 may be a cylindrical surface (a surface whose cross section in the X direction is circular)
- the surface shape of the second birefringent member 13 may be a tapered surface (inclined plane).
- the polarization control characteristics in this case are inferior to those of the first embodiment, but some effects can be obtained depending on the application of the projection exposure apparatus, and the high performance is achieved while the above-mentioned manufacturing cost is reduced. Can be realized.
- the phase difference between the polarizations of the light beams transmitted through the second double refracting member 13 is the second birefringent member 13. It means that it is determined by linear (linear function) according to the position in the plane of.
- the shapes of the first birefringence member 12 and the second birefringence member 13 in FIG. 1 are not limited to the shapes shown in the above first and second embodiments, and the above-mentioned characteristics of the transmitted light are not limited. Any shape may be used as long as the polarization state in the fixed annular zone can be made to coincide with the circumferential direction in each part.
- the shapes of the first birefringent member 12 and the second birefringent member 13 are formed stepwise at a predetermined position which is not a shape represented by the above-mentioned continuous and differential continuous function. It may be a step-like shape in which. Also, in order to form such a step-like shape, the formation by etching is suitable instead of the mechanical or mechanochemical polishing method.
- the first birefringence member 12 is to provide a phase difference between polarizations having rotational symmetry twice around the illumination system optical axis AX2. This includes, of course, non-uniform waveplates having an even function thickness in the X direction and having a constant thickness in the Y direction as shown in the first and second embodiments described above. None ,.
- the second birefringent member 13 be a non-uniform wavelength plate which gives a phase difference between polarized light having a one-time rotational symmetry around the illumination system optical axis AX2.
- the one-time rotational symmetry refers to the distribution force of the phase difference between polarizations and the symmetry of one of two axes orthogonal to the illumination system optical axis AX2, and the other axis is generally antisymmetric.
- antisymmetry refers to a function in which the absolute value is equal but the sign is reversed with respect to the inversion of the coordinate axes, but here it is assumed that a general antisymmetry function also includes a function in which a constant offset is added. Ru. This has a thickness determined by the odd function of offsetting in the XZ direction as shown in the first and second embodiments described above, and has a constant thickness in the direction orthogonal to that. It goes without saying that it includes a uniform wave plate.
- the first birefringent member 12 and the second birefringent member 12 may be used. It is needless to say that the shape of the birefringent member 13 does not correspond to the above specific annular zone area, and there is no particular problem if the shape does not satisfy the above conditions.
- first birefringence members 12 and second birefringence members 13 and the direction of the fast axis are not limited to those described in the first and second embodiments. . That is, even if three or more birefringent members are arranged in series along the traveling direction of the illumination light (along the illumination system optical axis AX2), rotation around the optical axis AX2 in the fast axis direction is good. Relationship is also limited to 45 ° It does not mean that In addition, when three or more birefringent members are arranged in series along the traveling direction of the illumination light, at least a part of the specific annular zone described above, and preferably about the entire circumference thereof.
- the direction force of the fast axis of at least one of the plurality of birefringent members is the direction of the other birefringent member. It may be different from the direction of the advancing axis.
- the material of the birefringence members 12 and 13 is not limited to the above-described quartz, and the intrinsic birefringence of fluorite that can be used even if other birefringence materials are used is utilized. It can also be formed.
- materials provided with birefringence by applying stress or the like to materials such as synthetic quartz originally having no birefringence can also be used as the birefringence members 12 and 13 or the like.
- the birefringent members 12 and 13 it is also possible to use one obtained by bonding a material having birefringence to a transmissive substrate having no birefringence.
- the above-mentioned thickness refers to the thickness of the material having birefringence.
- the bonding may be a method in which a thin film having birefringence is formed by means of vapor deposition or the like on a transparent substrate which is not only mechanical bonding such as adhesion or pressure bonding.
- the thickness shapes and the like of the first birefringence member 12 and the second birefringence member 13 shown in the first and second embodiments vary depending on the magnitude of birefringence of the material used. It is needless to say that the above-described shape determination method can be applied and the shape is determined even when using materials other than quartz whose force is quartz.
- the polarization state of the illumination light distributed in the annular zone is identical to the circumferential direction of the annular zone.
- a brief description is given with reference to 7 and 8.
- FIG. 7A shows an example of a fine periodic pattern PX formed on the reticle R of FIG.
- the periodic pattern PX is a pattern having periodicity in the X direction in the same XYZ coordinate system as that of FIG. 1, and the pitch PT thereof is on the beam W in consideration of the projection magnification of the projection optical system 25 of FIG.
- the value converted to scale is 140 nm.
- Figure 7 (B) shows the wafer when this pattern is illuminated with annular light with a coherence factor (illumination ⁇ ) of 0.9 and an annular ratio of 0.74 using illumination light with a wavelength of 193 nm.
- the distribution of diffracted light formed in the pupil plane 26 see FIG.
- FIG. 7 (C) is a diagram showing conditions of annular illumination for illuminating the pattern PX, and in the pupil plane 15 of the illumination optical system ILS of FIG. 1, the conditions of the annular illumination are set.
- An annular light that fills the ILO area illuminates the pattern PX.
- the zeroth-order diffracted light DO in FIG. 7 (B) from the periodic pattern PX is all distributed in the pupil plane 26 and transmitted through the projection optical system 25 to reach Ueno, W, but the first-order diffracted light D1R and D1 L can only partially penetrate the pupil plane 26 and the projection optics 25.
- the image of the pattern PX of the reticle R is formed on the wafer W as interference fringes between the zeroth-order diffracted light DO and the first-order diffracted lights D 1 R and D 1 L, but the interference fringes are formed by the pupil of the illumination optical system ILS
- the plane 15 is limited to a pair of zero-order diffracted light and first-order diffracted light generated from illumination light emitted from the same position.
- the first-order diffracted light D1L located at the left end of the pupil plane 26 in FIG. 7 (B) is paired with the portion located at the right end of the zero-order diffracted light DO, and those diffracted lights are The illumination light is illuminated from the rightmost partial region ILR in the annular region ILO in Fig. 7 (C).
- the first-order diffracted light D1R located at the right end of the pupil plane 26 in FIG. 7B is paired with the portion located at the left end of the zero-order diffracted light DO, and these diffracted lights are shown in FIG. 7 (C) Ring zone zone The illumination light illuminated from the leftmost partial zone ILL in ILO.
- the connection of the pattern PX is The luminous flux contributing to the image is limited to the partial area ILR and the partial area ILL, and the illumination light from which other area forces in the annular zone ILO are also emitted is an illumination light not contributing to the imaging of the pattern PX.
- the illumination light distributed in the partial region ILR and the partial region ILL in FIG. 7 (C) is placed in the PR direction and the PL direction parallel to the Z direction in FIG. 7 (C) (in FIG. In the case of linearly polarized light polarized in the direction R) on the reticle R in consideration of the action of the mirror 19 of It is effective to improve the contrast of the projected image of the PX, and hence the resolution and the depth of focus.
- the reticle pattern is a periodic pattern having a fine pitch in the Y direction rotated 90 ° from the pattern PX of FIG. 7A
- the diffracted light distribution shown in FIG. 7B. Will also rotate 90 °.
- the partial area through which the illumination light contributing to the imaging of the periodic pattern passes is also rotated by 90 ° between the partial area ILR and the partial area ILL shown in FIG. 7 (C) (ie, FIG.
- the preferred polarization state is linearly polarized light whose polarization direction coincides with the X direction.
- FIG. 8 (A) is a perspective view simply showing the relationship between the pupil surface 15 of the illumination optical system ILS of FIG. 1 and the reticle R, and the relay lens 16, the condenser lens 18, and the like in FIG. 20 mag is omitted.
- the illumination light distributed in the annular zone ILO in FIG. 8A is the end ILL of the X direction in order to improve the imaging performance of the pattern PX having periodicity in the X direction.
- the linearly polarized light be in the Y direction (in the paper surface depth direction in FIG. 8A) in the ILR.
- the end of the direction be linearly polarized light in the X direction at IL U and ILD. That is, it is desirable to use linearly polarized light whose polarization direction is generally coincident with the circumferential direction of the annular zone ILO.
- the polarization direction of these patterns is also taken into consideration. It is desirable to use linear polarization, which is perfectly coincident with the circumferential direction of the annular zone. By the way, the above-mentioned polarization state does not necessarily realize an effective polarization state for a pattern orthogonal to the directional pattern suitable for the polarization state of each part in the annular zone ILO.
- the illumination light polarized in the X direction from the partial area ILU has a periodicity in the X direction, and is a polarization state that is not preferable for imaging the pattern PX in which the longitudinal direction is the Y direction.
- FIG. 7 (C) showing the light source contributing to the imaging of a pattern having a fine pitch in the X direction
- a partial region ILU corresponding to the upper end of the annular region ILO Is It does not contribute to the imaging of a pattern having a fine pitch in the X direction in the first place, and since it is a light source, whatever the polarization state of the partial area ILU is, it is caused by the polarization state. It is totally impossible to deteriorate the imaging characteristics.
- S-polarized light means linearly polarized light whose polarization direction is orthogonal to an incident surface (a plane including the normal to the object and the light beam) where the light beam enters the object. That is, as shown in FIG. 8 (B), the illumination light ILL1 from the partial region ILL which is also a linearly polarized light force in the direction coincident with the circumferential direction of the annular region ILO has the polarization direction EF1 an incident surface (FIG.
- the illumination light ILD1 on the similar partial region ILD also has the polarization direction EF2 as S-polarization perpendicular to the incident plane (the plane of the paper of FIG. 8C).
- illumination light of the partial regions ILR and ILU at symmetrical positions with respect to the partial regions ILL and ILD and the optical axis AX41 of the illumination optical system is also illuminated on the partial regions ILR and ILU. Since the light has a polarization direction coincident with the circumferential direction of the annular zone ILO, the symmetry force is also S polarization and is incident on the reticle R.
- the incident angle of the illumination light distributed on the annular zone ILO to the reticle R is centered on the angle ⁇ from the optical axis AX41 of the illumination optical system (that is, a perpendicular to the reticle R). It becomes a predetermined angle range.
- the luminous flux irradiated onto the reticle R at this incident angle is hereinafter referred to as "specific illumination light".
- the angle ⁇ and the angular range may be determined based on the wavelength of the illumination light, the pitch of the pattern to be transferred on the reticle R, and the like.
- the first and second birefringence members 12 and 13 described above also determine the shape force inherent to the members.
- the polarization state of the illumination light distributed in the specific annular zone is converted to the polarization state whose main component is linear polarization parallel to the circumferential direction of the specific annular zone, the radius (C2, C1) Is difficult to change easily. Therefore, as described above, when it is necessary to change the desired annular zone area based on the pitch etc. of the pattern to be transferred on the reticle R, the first and second birefringent members 12 of FIG. , 13 and the fly eye lens 14 etc., as shown in FIG.
- a plurality of zoom type conical prisms 41 and 42 are a concave conical prism 41 having a concave conical surface 41 b and a convex conical prism 42 having a convex conical surface 42 a, with an interval DD being variable. It is disposed along the optical axis AX2.
- the illumination light transmitted through the first and second birefringence members 12 and 13 and distributed in a specific annular zone centered on the average radius RI is obtained by the zoom conical prisms 41 and 42.
- the incident surface of the fly eye lens 14 and the exit surface thereof, the pupil surface 15 of the illumination optical system, are enlarged to the radius RO.
- the radius RO can be expanded by increasing the distance DD between the two conical prisms 41 and 42, and can be reduced by reducing the distance DD.
- a zoom optical system may be used instead of the zoom conical prisms 41 and 42 described above.
- the illumination light amount distribution formed on the pupil plane 15 of the illumination optical system ILS in FIG. 1 is the annular zone, that is, application to the annular zone illumination.
- the illumination conditions that can be realized by the projection exposure apparatus of FIG. 1 are not necessarily limited to the annular illumination. That is, the zoom type conical prisms 41 and 42 of the birefringent members 12 and 13 of FIG. 1 and the zoom type prisms of FIG. 9 have the polarization state of the illumination light distributed in the specific annular zone in the pupil plane 15 of the illumination optical system.
- the distribution of illumination light may be limited to a further specific partial region within the specific annular region, that is, for example, the partial region ILL in FIG. 7 (C). Even if it is limited to ILR, the illumination light distributed in the partial area is converted into illumination light mainly composed of linearly polarized light having a polarization direction parallel to the circumferential direction of the specific annular zone. Needless to say, it can be done.
- the diffractive optical element 9a in FIG. 1 is replaced, and another diffractive optical element force is generated.
- the light (illumination light) is transmitted to the first birefringent member 12 and the second birefringent member 13 in the specific annular zone region. It suffices to concentrate on a fixed discrete area. For example, although there are two places where the illumination light is concentrated at partial areas ILL and ILR in FIG. 7C, the present invention is not limited to this, and it may be concentrated at an arbitrary place in the specific annular zone. The number may be four. The selection may be determined according to the shape of the pattern to be exposed on the reticle R.
- a convex polyhedron prism such as a pyramid type is used instead of the above-mentioned zoom type conical prisms 41 and 42. It is also possible to use an optical member group in which a concave polyhedron prism is combined with the same variable spacing.
- illumination light distributed outside these specific regions is not suitable for the exposure of the pattern to be exposed, so it may be preferable to make the light quantity distribution substantially zero.
- diffracted light hereinafter referred to as "error light"
- error light diffracted light
- a stop may be provided on the light incident surface side or the light emission surface side of the fly's eye lens 14 in FIG. 1 to block this error light.
- the incident direction is also restricted only from the plurality of substantially discrete directions described above.
- a configuration is provided in which error light distributed outside the specific annular zone is shielded by providing a stop on the incident surface side or the emission surface side of the fly eye lens 14 can do.
- a fly's eye lens 14 is used as an optical integrator, and an internal reflection integrator (for example, a glass rod) can be used as an optical integrator.
- the exit surface of the glass rod should be disposed in a conjugate plane with the reticle R which is not the pupil plane 14 of the illumination optical system. Become.
- the laser light source as the exposure light source 1 emits linearly polarized light polarized in the X direction.
- the Z direction in FIG. 1 may be used. It may be possible to emit linearly polarized light polarized into or light fluxes of other polarization states.
- the exposure light source 1 in FIG. 1 emits light linearly polarized in the Y direction, that is, light linearly polarized in the Z direction at the positions of the birefringent members 12 and 13, the first and second embodiments described above By rotating the birefringent members 12 and 13 shown in FIG. 4 by 90.degree.
- the polarization state almost similar to the polarization state shown in FIGS. 4 (C) and 6 (C). It is possible to obtain the illumination light of (ie, the illumination light in a state rotated 90 ° from the state shown in both figures).
- the linear polarization in the Y direction emitted from the exposure light source 1 may be converted into linear polarization in the X direction by the polarization control member 4 (polarization control mechanism) in FIG.
- a polarization control member 4 can be easily realized by a so-called 1Z dual wavelength plate. Even when the exposure light source 1 emits circularly polarized light or elliptically polarized light, similarly using a 1Z 2 wavelength plate or 1Z 4 wavelength plate as the polarization control member 4 converts it into a linearly polarized light in a desired Z direction. Can.
- the polarization control member 4 can not convert the light flux of any polarization state emitted from the exposure light source 1 into the polarization in the Z direction without loss of light quantity. Therefore, the exposure light source 1 needs to generate a light beam (a light beam which can be converted into a linear polarization without loss of light quantity by a wave plate etc.) having a single polarization state such as a linear polarization, a circular polarization or an elliptical polarization.
- the intensity of the luminous flux other than the above single polarization state is not so large with respect to the total intensity of the illumination light, the adverse effect on the imaging characteristics of the luminous flux other than the single polarization state will be minor. Therefore, the luminous flux emitted from the exposure light source 1 may include luminous fluxes other than the single polarization state, up to a certain extent (for example, about 20% or less of the total light quantity).
- the polarization state of the illumination light is always arranged in the circumferential direction of the annular zone, the illumination light being distributed in the specific annular zone. It is not always the best to have parallel linearly polarized light, or to set the specific illumination light to enter the reticle R as S-polarized light. That is, depending on the pattern of the reticle size to be exposed, it may be preferable to adopt normal illumination (illumination having a circular illumination light intensity distribution on the pupil plane 15 of the illumination optical system) instead of annular illumination. To Is a force which may be preferable not to use the illumination light having the polarization state of the above embodiment.
- the polarization control member 4 of FIG. 1 the polarization state of the light beam emitted from the light source of the laser etc. It is preferable to adopt an element or an optical system that can be converted. This can be realized, for example, by two polarized light beam splitters 4b and 4c as shown in FIG.
- FIG. 10 shows a polarization control optical system which can be installed at the position of the polarization control member 4 of FIG. 1.
- the illumination light flux ILO (corresponding to the illumination light IL of FIG. 1)
- the light is incident on the 1Z two-wavelength plate or the rotating wavelength plate 4a having a 1Z four-wave plate force.
- the illumination light beam IL 1 converted into linearly polarized light or circularly polarized light in a direction inclined by 45 ° in FIG. 10 also becomes P polarization component force with respect to its division plane by the first polarization beam splitter 4 b.
- the light beam IL2 is divided into IL3 consisting of s-polarization components, and one light beam IL2 travels straight on the prism 4b upward in FIG. 10, and the other light beam IL3 is reflected to the right in FIG.
- the light beam IL2 that has traveled straight is incident on the next polarized beam splitter 4c, but from its polarization characteristic, the light beam IL2 travels straight in the polarized beam splitter 4c, and becomes a light flux IL4, as shown in FIG. move on.
- the reflected light beam IL3 is reflected by the mirrors 4d and 4e and enters the force polarization beam splitter 4c, and the light beam IL3 reflected again here rejoins with the straight light beam IL4.
- an optical path length difference of 2 ⁇ DL is formed between the combined light beams IL3 and IL4. Then, if this optical path length difference 2 ⁇ DL is set to be longer than the coherent length of the illumination light flux, the coherence between the two light fluxes disappears, and the merged light flux can be made substantially random polarization.
- the illumination light IL passing therethrough is always randomly polarized, and the polarization state of the above embodiment is realized.
- the polarization state of the illumination light IL1 transmitted through the rotation wave plate 4a is converted into linearly polarized light all of which transmits the first beam splitter 4b by the rotation of the rotation wave plate 4a.
- the above-mentioned failure does not occur.
- the polarization beam splitter 4b, 4c Since it is not possible to avoid the occurrence of a certain light quantity loss due to reflection losses etc. in 4d and 4e, if it is not necessary to randomly polarize the illumination light, the beam splitters 4b and 4c and the rotating wavelength plate 4a are illuminated.
- a mechanism may be provided to retract outside the optical path of the optical system.
- the polarization control member 4 in the figure is composed of, for example, a 1Z two-wavelength plate, and the polarization state of the illumination light incident on the first birefringent member 12 is inclined 45.degree. From the X and Z axes as described above. It is also possible to obtain almost the same effect as randomly polarized illumination. Similarly, even if the polarization control member 4 is formed of, for example, a 1Z4 wavelength plate, and the polarization state of the illumination light incident on the first birefringent member 12 is circularly polarized, it is the same as random polarized illumination. You can also get the effect of
- first birefringence member 12 and the second birefringence member 13 in FIG. 1 can be collectively rotated around the illumination system optical axis AX2, which is the optical axis of the illumination optical system I LS.
- AX2 the optical axis of the illumination optical system I LS.
- each birefringent member such as the first birefringent member 12 and the second birefringent member 13 of FIG.
- the rotation direction of each birefringent member it is preferable to set the rotation direction of each birefringent member to. In this case, the illumination light travels through each of the birefringent members and is emitted while maintaining the linearly polarized light at the time of incidence which is not subject to any conversion of polarization state.
- the first birefringent member 12 When setting the linear polarization state in one predetermined direction, the first birefringent member 12
- the second birefringent member 13 and the like can be collectively accommodated to the outside of the optical path of the illumination optical system. That is, it is possible to correspond to the setting of the linear polarization state in a predetermined one direction by providing the optical system and exchanging the birefringent members etc. collectively.
- a plurality of birefringent member groups in the optical system may be set, and they may be arranged on the position on the illumination system optical axis AX2 so as to be exchangeable. .
- each birefringent member group has a characteristic of converting illumination light into linearly polarized light along its circumferential direction in a specific annular zone having different outer and inner radii. Needless to say.
- the coherence factor ( ⁇ value) of the illumination light is desirably about 0.4 or less.
- FIGS. 4 (C) and 6 (C) both the first embodiment (FIG. 4 (C)) and the second embodiment (FIG. 6 (C)) of the first birefringent member 12 and the second birefringent member 13 are shown.
- the first birefringent member 12 and the second birefringent member 13 emit the linearly polarized light in the X direction which enters while maintaining the almost same polarization state .
- the above-mentioned illumination ⁇ is approximately 0.45.
- the polarization state of the illumination light beam can be ⁇ polarized.
- the optical path of the illumination optical system is used.
- the polarization direction of the incident light to the birefringent member which can not be retracted to the outside, is determined by the polarization control member 4 or the like described above.
- An illumination light flux suitable for illumination on the above-mentioned spatial frequency modulation type phase shift reticle by switching is an illumination luminous flux having an illumination ⁇ of about 0.4 or less, and polarized in the X direction or in the ⁇ direction (on the reticle R in FIG. In the above, it is possible to realize illumination light in the X direction or the polarization direction).
- FIG. 11 shows an example of a manufacturing process of a semiconductor device.
- a wafer W is manufactured as well as silicon semiconductor isopower.
- a photoresist is applied on the wafer W (step S10), and in the next step S12, a reticle (provisionally R1) is loaded on the reticle stage of the projection exposure apparatus of the above embodiment (FIG. 1).
- the wafer W is loaded on the wafer stage, and the pattern (represented by symbol A) of the reticle R1 is transferred (exposed) onto the entire shot area SE on the wafer W by the scanning exposure method. At this time, double exposure is performed as necessary.
- the wafer W is, for example, a wafer 300 mm in diameter (12-inch wafer), and the size of the shot area SE is, for example, a rectangular area having a width of 25 mm in the non-scanning direction and a width of 33 mm in the scanning direction.
- a predetermined pattern is formed on each shot area SE of the wafer W by performing development, etching, ion implantation, and the like.
- step S16 a photoresist is applied on the wafer W.
- a reticle (provisionally R2) is placed on the reticle stage of the projection exposure apparatus of the above embodiment (FIG. 1). And loads the wafer W on the wafer stage, and transfers (exposed) the pattern (represented by symbol B) of the reticle R2 to each shot area SE on the wafer W by the scanning exposure method.
- step S20 a predetermined pattern is formed on each shot area of the wafer W by performing development and etching of the wafer W, ion implantation, and the like.
- the above exposure step / pattern formation step (step S16 to step S20) is repeated as many times as necessary to manufacture a desired semiconductor device.
- the semiconductor device SP as a product is obtained through a dicing process (step S22) for separating each chip CP on the wafer W one by one, a bonding process, and a packaging process (step S24). Is manufactured.
- the exposure is performed by the projection exposure apparatus of the above embodiment, in the exposure step, predetermined polarization is performed in a state where the utilization efficiency of the illumination light (exposure beam) is enhanced.
- the reticle can be illuminated in the state. Accordingly, the resolution of the periodic pattern or the like with fine pitches is improved, so that a highly integrated and high-performance semiconductor integrated circuit can be manufactured inexpensively with high throughput.
- an illumination optical system including a plurality of lenses, a projection optical system is incorporated in the exposure apparatus main body, and optical adjustment is performed to obtain a reticle stage including many mechanical parts. It can be manufactured by attaching the wafer stage to the main body of the exposure apparatus, connecting the wiring and piping, and performing general adjustment (electrical adjustment, operation check, etc.). It is desirable that the production of the projection exposure apparatus be performed in a clean room in which the temperature and the degree of cleanliness etc. are controlled.
- the present invention can be applied not only to a scanning exposure type projection exposure apparatus but also to a batch exposure type projection exposure apparatus such as a stepper.
- the magnification of the projection optical system used may be equal magnification or magnification as well as reduction magnification.
- the present invention can also be applied to an immersion exposure apparatus disclosed in, for example, WO 99Z49504.
- the application of the projection exposure apparatus of the present invention is not limited to the exposure apparatus for manufacturing semiconductor devices.
- the present invention can be widely applied to exposure apparatuses for producing various devices such as exposure devices for imaging, imaging devices (CCD etc.), micro machines, thin film magnetic heads, and DNA chips.
- the present invention also applies to an exposure step (exposure apparatus) in manufacturing a mask (a photomask including an X-ray mask, a reticle, etc.) on which mask patterns of various devices are formed using a photolithographic process. It can apply.
- the illumination optical system (2-20) included in the projection exposure apparatus described in the above embodiment is also applicable as an illumination optical apparatus for illuminating a first object such as a reticle R. Not to mention.
- the utilization efficiency of the exposure beam (illumination light) can be enhanced, and the predetermined pattern can be formed with high accuracy. Therefore, various devices such as semiconductor integrated circuits can be manufactured with high accuracy and high throughput (throughput).
Abstract
Description
Claims
Priority Applications (17)
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KR1020147003559A KR101640327B1 (ko) | 2003-10-28 | 2004-10-26 | 조명 광학 장치, 노광 장치, 노광 방법 및 디바이스 제조 방법 |
KR1020167000485A KR20160011695A (ko) | 2003-10-28 | 2004-10-26 | 조명 광학 장치, 조명 방법, 노광 방법 및 디바이스 제조 방법 |
EP04817303.3A EP1681710B1 (en) | 2003-10-28 | 2004-10-26 | Lighting optical device and projection aligner |
KR1020157002576A KR101699827B1 (ko) | 2003-10-28 | 2004-10-26 | 투영 노광 장치 |
JP2005515005A JP4543331B2 (ja) | 2003-10-28 | 2004-10-26 | 照明光学装置及び投影露光装置 |
KR1020147003554A KR101518188B1 (ko) | 2003-10-28 | 2004-10-26 | 조명 광학 장치, 노광 장치, 노광 방법 및 디바이스 제조 방법 |
KR1020107008438A KR101514104B1 (ko) | 2003-10-28 | 2004-10-26 | 투영 노광 장치, 노광 방법, 디바이스 제조 방법, 조명 광학계 및 편광 유닛 |
KR1020117001502A KR101531739B1 (ko) | 2003-10-28 | 2004-10-26 | 투영 노광 장치 |
KR1020177001659A KR101921434B1 (ko) | 2003-10-28 | 2004-10-26 | 투영 노광 장치 |
US11/410,952 US9140992B2 (en) | 2003-10-28 | 2006-04-26 | Illumination optical apparatus and projection exposure apparatus |
US12/318,216 US9140993B2 (en) | 2003-10-28 | 2008-12-23 | Illumination optical apparatus and projection exposure apparatus |
US12/458,635 US9244359B2 (en) | 2003-10-28 | 2009-07-17 | Illumination optical apparatus and projection exposure apparatus |
US13/889,798 US9423697B2 (en) | 2003-10-28 | 2013-05-08 | Illumination optical apparatus and projection exposure apparatus |
US13/890,603 US9146476B2 (en) | 2003-10-28 | 2013-05-09 | Illumination optical apparatus and projection exposure apparatus |
US14/713,428 US9423698B2 (en) | 2003-10-28 | 2015-05-15 | Illumination optical apparatus and projection exposure apparatus |
US14/713,385 US9760014B2 (en) | 2003-10-28 | 2015-05-15 | Illumination optical apparatus and projection exposure apparatus |
US15/497,861 US20170227698A1 (en) | 2003-10-28 | 2017-04-26 | Illumination optical apparatus and projection exposure apparatus |
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EP (7) | EP2654073B1 (ja) |
JP (14) | JP4543331B2 (ja) |
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CN (3) | CN101387754B (ja) |
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