WO2005043625A3 - Dual capacitor structure for imagers and method of formation - Google Patents

Dual capacitor structure for imagers and method of formation Download PDF

Info

Publication number
WO2005043625A3
WO2005043625A3 PCT/US2004/034370 US2004034370W WO2005043625A3 WO 2005043625 A3 WO2005043625 A3 WO 2005043625A3 US 2004034370 W US2004034370 W US 2004034370W WO 2005043625 A3 WO2005043625 A3 WO 2005043625A3
Authority
WO
WIPO (PCT)
Prior art keywords
capacitors
region
dielectric
formation
different
Prior art date
Application number
PCT/US2004/034370
Other languages
French (fr)
Other versions
WO2005043625A2 (en
Inventor
Howard E Rhodes
Original Assignee
Micron Technology Inc
Howard E Rhodes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Howard E Rhodes filed Critical Micron Technology Inc
Priority to CN2004800380698A priority Critical patent/CN1898800B/en
Priority to EP04795517A priority patent/EP1676324A2/en
Priority to JP2006536694A priority patent/JP2007513495A/en
Publication of WO2005043625A2 publication Critical patent/WO2005043625A2/en
Publication of WO2005043625A3 publication Critical patent/WO2005043625A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Abstract

CMOS and CCD imaging devices comprising different in-pixel capacitors and peripheral capacitors and methods of formation are disclosed. The capacitors used in periphery circuits have different requirements from the capacitors used in the pixel itself. Dual stack capacitors comprising two dielectric layers may be provided to achieve low leakage and high capacitance. A single masking step may be provided such that one region has a dual dielectric capacitor and a second region has a single dielectric capacitor. A different dielectric may also be provided in one region compared to another region wherein the inter-electrode insulator comprises a single dielectric in both regions.
PCT/US2004/034370 2003-10-22 2004-10-19 Dual capacitor structure for imagers and method of formation WO2005043625A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2004800380698A CN1898800B (en) 2003-10-22 2004-10-19 Dual capacitor structure for imagers and its forming method
EP04795517A EP1676324A2 (en) 2003-10-22 2004-10-19 Dual capacitor structure for imagers and method of formation
JP2006536694A JP2007513495A (en) 2003-10-22 2004-10-19 Dual capacitor structure for imager and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/689,948 2003-10-22
US10/689,948 US7038259B2 (en) 2003-10-22 2003-10-22 Dual capacitor structure for imagers and method of formation

Publications (2)

Publication Number Publication Date
WO2005043625A2 WO2005043625A2 (en) 2005-05-12
WO2005043625A3 true WO2005043625A3 (en) 2005-09-01

Family

ID=34521515

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/034370 WO2005043625A2 (en) 2003-10-22 2004-10-19 Dual capacitor structure for imagers and method of formation

Country Status (7)

Country Link
US (3) US7038259B2 (en)
EP (1) EP1676324A2 (en)
JP (1) JP2007513495A (en)
KR (1) KR100854571B1 (en)
CN (1) CN1898800B (en)
TW (1) TWI251438B (en)
WO (1) WO2005043625A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038259B2 (en) * 2003-10-22 2006-05-02 Micron Technology, Inc. Dual capacitor structure for imagers and method of formation
US7663167B2 (en) * 2004-12-23 2010-02-16 Aptina Imaging Corp. Split transfer gate for dark current suppression in an imager pixel
KR100752655B1 (en) 2006-02-15 2007-08-29 삼성전자주식회사 Image sensor and method of fabricating the same
KR20070082956A (en) * 2006-02-20 2007-08-23 삼성전자주식회사 Array substrate used in liquid crystal display panel
US7531374B2 (en) * 2006-09-07 2009-05-12 United Microelectronics Corp. CMOS image sensor process and structure
US7944020B1 (en) 2006-12-22 2011-05-17 Cypress Semiconductor Corporation Reverse MIM capacitor
KR100885494B1 (en) * 2007-06-05 2009-02-24 삼성전자주식회사 Method of fabricating a image device having a capacitor and image device fabricated thereby
US20090128991A1 (en) * 2007-11-21 2009-05-21 Micron Technology, Inc. Methods and apparatuses for stacked capacitors for image sensors
KR101458052B1 (en) * 2008-06-12 2014-11-06 삼성전자주식회사 Cmos image sensor having preventing crosstalk structure and method for manufacturing the same
JP5369779B2 (en) * 2009-03-12 2013-12-18 ソニー株式会社 Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus
US8188786B2 (en) 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
JP5704848B2 (en) * 2010-06-30 2015-04-22 キヤノン株式会社 Solid-state imaging device and camera
US9935139B2 (en) 2014-08-22 2018-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor and method for forming the same
CN109979930B (en) * 2017-12-28 2020-12-04 南京大学 2X 2 array layout based on composite dielectric grid photosensitive detector and working method
US11264389B2 (en) * 2020-06-03 2022-03-01 Nanya Technology Corporation Stack capacitor structure and method for forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413188A (en) * 1980-12-10 1983-11-01 Fuji Xerox Co., Ltd. Camera tube apparatus for reading documents
US5757040A (en) * 1992-03-24 1998-05-26 Seiko Instruments Inc. Real-time semiconductor radiation detector
WO2000055919A1 (en) * 1999-03-16 2000-09-21 Conexant Systems, Inc. Low-noise cmos active pixel sensor for imaging arrays with high speed global or row reset
US20020115252A1 (en) * 2000-10-10 2002-08-22 Haukka Suvi P. Dielectric interface films and methods therefor
US20020117690A1 (en) * 1999-07-14 2002-08-29 Rhodes Howard E. CMOS imager with storage capacitor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755176B2 (en) * 1994-06-30 1998-05-20 日本電気株式会社 Solid-state imaging device
US6124606A (en) * 1995-06-06 2000-09-26 Ois Optical Imaging Systems, Inc. Method of making a large area imager with improved signal-to-noise ratio
JPH09219823A (en) * 1995-12-07 1997-08-19 Alps Electric Co Ltd Contact area sensor
JP3853478B2 (en) * 1997-09-10 2006-12-06 エルピーダメモリ株式会社 Manufacturing method of semiconductor integrated circuit device
JP4052729B2 (en) * 1998-06-12 2008-02-27 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
KR100268424B1 (en) * 1998-08-07 2000-10-16 윤종용 A method of fabricating interconnect of semiconductor device
US6274887B1 (en) * 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6640403B2 (en) * 1999-03-22 2003-11-04 Vanguard International Semiconductor Corporation Method for forming a dielectric-constant-enchanced capacitor
KR100477788B1 (en) * 1999-12-28 2005-03-22 매그나칩 반도체 유한회사 Method for fabricating CMOS image sensor having photodiode coupled capacitor
JP2002072963A (en) * 2000-06-12 2002-03-12 Semiconductor Energy Lab Co Ltd Light-emitting module and driving method therefor, and optical sensor
KR100397663B1 (en) * 2000-06-23 2003-09-13 (주) 픽셀플러스 Cmos image sensor in which dataline is maintained as data of reset mode
JP2002083880A (en) * 2000-06-30 2002-03-22 Toshiba Corp Semiconductor device and production method therefor
JP3847645B2 (en) * 2002-03-20 2006-11-22 富士通株式会社 Semiconductor device and manufacturing method thereof
US20040012043A1 (en) * 2002-07-17 2004-01-22 Gealy F. Daniel Novel dielectric stack and method of making same
US7145152B2 (en) * 2003-10-14 2006-12-05 General Electric Company Storage capacitor design for a solid state imager
US7038259B2 (en) * 2003-10-22 2006-05-02 Micron Technology, Inc. Dual capacitor structure for imagers and method of formation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413188A (en) * 1980-12-10 1983-11-01 Fuji Xerox Co., Ltd. Camera tube apparatus for reading documents
US5757040A (en) * 1992-03-24 1998-05-26 Seiko Instruments Inc. Real-time semiconductor radiation detector
WO2000055919A1 (en) * 1999-03-16 2000-09-21 Conexant Systems, Inc. Low-noise cmos active pixel sensor for imaging arrays with high speed global or row reset
US20020117690A1 (en) * 1999-07-14 2002-08-29 Rhodes Howard E. CMOS imager with storage capacitor
US20020115252A1 (en) * 2000-10-10 2002-08-22 Haukka Suvi P. Dielectric interface films and methods therefor

Also Published As

Publication number Publication date
US7038259B2 (en) 2006-05-02
US20070034917A1 (en) 2007-02-15
JP2007513495A (en) 2007-05-24
KR20060120134A (en) 2006-11-24
CN1898800B (en) 2010-10-20
WO2005043625A2 (en) 2005-05-12
TW200522728A (en) 2005-07-01
KR100854571B1 (en) 2008-08-26
TWI251438B (en) 2006-03-11
CN1898800A (en) 2007-01-17
EP1676324A2 (en) 2006-07-05
US7274054B2 (en) 2007-09-25
US20050087780A1 (en) 2005-04-28
US20050145906A1 (en) 2005-07-07
US7589365B2 (en) 2009-09-15

Similar Documents

Publication Publication Date Title
WO2005043625A3 (en) Dual capacitor structure for imagers and method of formation
US9443892B2 (en) Image sensor and method of forming the same
US20170207264A1 (en) CMOS Image Sensors Including Vertical Transistor
CN106663188B (en) Electronic equipment with fingerprint sensing system and conductive shell
EP1189262A3 (en) Semiconductor device comprising a capacitor and method of manufacturing the same
CN104377211A (en) Image sensor pixel cell with switched deep trench isolation structure
JP2006210897A (en) Image sensor and pixel imaging unit
TW200520254A (en) Pixel structure and fabricating method thereof
TW200727452A (en) MIM capacitor integrated into the damascene structure and method of making thereof
TW200723324A (en) Laminated capacitor and manufacturing method thereof
US20160071920A1 (en) Metal-Insulator-Metal Capacitor with Current Leakage Protection
JP2013012551A (en) Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus
US20090160019A1 (en) Semiconductor capacitor
US20090128991A1 (en) Methods and apparatuses for stacked capacitors for image sensors
US20200350355A1 (en) Image sensor pixels having reduced pitch
WO2018198814A1 (en) Semiconductor device, manufacturing method, imaging element, and electronic equipment
US20150123173A1 (en) 3d stacked image sensor with pmos components
US20110156113A1 (en) Back side illumination image sensor reduced in size and method for manufacturing the same
MY129379A (en) Layered polymer on aluminum stacked capacitor
EP2793263A1 (en) Solid-state imaging element and electronic device
CN103167748A (en) Method of manufacturing circuit board
US20090146199A1 (en) CMOS image sensor and method for fabricating the same
CN107251227B (en) Semiconductor device, solid-state imaging element, imaging device, and electronic apparatus
US7202899B2 (en) Method to prevent white pixels in a CMOS image sensor
JP2004327619A (en) Semiconductor integrated circuit device and its manufacturing method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200480038069.8

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2006536694

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2004795517

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020067009901

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004795517

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067009901

Country of ref document: KR