WO2005050701A8 - Stressed semiconductor device structures having granular semiconductor material - Google Patents

Stressed semiconductor device structures having granular semiconductor material

Info

Publication number
WO2005050701A8
WO2005050701A8 PCT/US2004/037434 US2004037434W WO2005050701A8 WO 2005050701 A8 WO2005050701 A8 WO 2005050701A8 US 2004037434 W US2004037434 W US 2004037434W WO 2005050701 A8 WO2005050701 A8 WO 2005050701A8
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor material
semiconductor device
device structures
stressed
granular
Prior art date
Application number
PCT/US2004/037434
Other languages
French (fr)
Other versions
WO2005050701A2 (en
WO2005050701A3 (en
Inventor
Bruce B Doris
Michael P Belyansky
Diane C Boyd
Dureseti Chidambarrao
Oleg Gluschenkov
Original Assignee
Ibm
Bruce B Doris
Michael P Belyansky
Diane C Boyd
Dureseti Chidambarrao
Oleg Gluschenkov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Bruce B Doris, Michael P Belyansky, Diane C Boyd, Dureseti Chidambarrao, Oleg Gluschenkov filed Critical Ibm
Priority to AT04810633T priority Critical patent/ATE512465T1/en
Priority to JP2006539779A priority patent/JP4843498B2/en
Priority to EP04810633A priority patent/EP1683187B1/en
Publication of WO2005050701A2 publication Critical patent/WO2005050701A2/en
Publication of WO2005050701A8 publication Critical patent/WO2005050701A8/en
Publication of WO2005050701A3 publication Critical patent/WO2005050701A3/en

Links

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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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    • H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

Abstract

A method of fabricating a semiconductor device structure, includes: providing a substrate (1), providing an electrode (6) on the substrate (1), forming a recess (12) in the electrode (6), the recess having an opening, disposing a small grain semiconductor material (17) within the recess, covering the opening to contain the small grain semiconductor material, within the recess, and then annealing the resultant structure.
PCT/US2004/037434 2003-11-14 2004-11-09 Stressed semiconductor device structures having granular semiconductor material WO2005050701A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AT04810633T ATE512465T1 (en) 2003-11-14 2004-11-09 STRESSED SEMICONDUCTOR DEVICE STRUCTURES USING GRANULAR SEMICONDUCTOR MATERIAL
JP2006539779A JP4843498B2 (en) 2003-11-14 2004-11-09 Method for manufacturing a semiconductor device structure
EP04810633A EP1683187B1 (en) 2003-11-14 2004-11-09 Stressed semiconductor device structures having granular semiconductor material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/707,018 2003-11-14
US10/707,018 US7122849B2 (en) 2003-11-14 2003-11-14 Stressed semiconductor device structures having granular semiconductor material

Publications (3)

Publication Number Publication Date
WO2005050701A2 WO2005050701A2 (en) 2005-06-02
WO2005050701A8 true WO2005050701A8 (en) 2005-11-03
WO2005050701A3 WO2005050701A3 (en) 2006-01-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/037434 WO2005050701A2 (en) 2003-11-14 2004-11-09 Stressed semiconductor device structures having granular semiconductor material

Country Status (7)

Country Link
US (2) US7122849B2 (en)
EP (1) EP1683187B1 (en)
JP (1) JP4843498B2 (en)
KR (1) KR100946038B1 (en)
CN (1) CN100468785C (en)
AT (1) ATE512465T1 (en)
WO (1) WO2005050701A2 (en)

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DE10245153A1 (en) * 2002-09-27 2004-04-15 Infineon Technologies Ag Integrated field effect transistor with two control areas, use of this field effect transistor and manufacturing process
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