WO2005051059A1 - Rough contacts - Google Patents

Rough contacts Download PDF

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Publication number
WO2005051059A1
WO2005051059A1 PCT/EP2004/052671 EP2004052671W WO2005051059A1 WO 2005051059 A1 WO2005051059 A1 WO 2005051059A1 EP 2004052671 W EP2004052671 W EP 2004052671W WO 2005051059 A1 WO2005051059 A1 WO 2005051059A1
Authority
WO
WIPO (PCT)
Prior art keywords
contact point
elevations
rough surface
insulating layer
contact
Prior art date
Application number
PCT/EP2004/052671
Other languages
German (de)
French (fr)
Inventor
Karl Weidner
Jörg ZAPF
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2005051059A1 publication Critical patent/WO2005051059A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2401—Structure
    • H01L2224/2402—Laminated, e.g. MCM-L type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/0103—Zinc [Zn]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0367—Metallic bump or raised conductor not used as solder bump
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1189—Pressing leads, bumps or a die through an insulating layer

Definitions

  • the protection against counterfeiting can be considerably increased by inserting electronic modules into smart cards, passports or documents. These modules have to be very thin, i.e. less than 100 ⁇ m thick. In addition, it is required that they can be produced very cost-effectively, ultra-thin, flexible, space-saving and possibly also integrable in a production line with self-generating energy supply at low material and manufacturing costs. Methods are known from the field of RF-ID antenna production for producing structured metallic structures at low cost. The additional, but cost-relevant process step is the contacting of components. These components can be semiconductor ICs, passive components, but also sensors or displays.
  • Vox the contacting of the components, a film or a solid carrier is produced, which has one or more structured metal levels.
  • solder / solder paste or conductive adhesive to the substrate and / or component. Contacting through flip chip placement and reflow soldering or adhesive hardening. - Application of anisotropically conductive adhesives or foils. Contacting through flip chip placement and heat sealing, i.e. under pressure and temperature. - A method which is also known is a plated-through hole using a non-conductive adhesive. The pads of the components are increased, that is to say so-called bumps are generated. The company Nanopierce fixes separate, hard, pointed, conductive particles to the surfaces of the bumps, which are supposed to improve the electrical contact. The components are placed in the non-conductive adhesive and contacted individually under temperature and pressure.
  • the invention is based on the object of specifying a possibility of cost-effective contacting of components for the production of ultra-thin modules.
  • a contact point for an electrical component has a rough surface with elevations.
  • the elevations are therefore not created by particles subsequently attached to the surface, but the contact point itself is produced or formed with a rough surface. This eliminates the additional manufacturing step of arranging particles separately.
  • the elevations of the rough surface are in particular warts, needles, tips and / or whiskers.
  • the elevations are preferably larger than 1 ⁇ m, in particular larger than 5 ⁇ m, but smaller than 50 ⁇ m, in particular smaller than 20 ⁇ m.
  • the elevations can be coated with a gold layer, for example.
  • a suitable choice of material ensures that the rough surface has mechanical stability, ie it cannot be leveled by low pressure. This can be done, for example, by using nickel, palladium and the like or a nickel-cobalt alloy as the base material or as a covering layer of the contact point.
  • the contact point is in particular a contact pad and / or a bump.
  • the contact point in a product that has a component with a dex contact point, an insulating layer and a conductor takes on the following function: the contact point is formed with a rough surface with elevations which penetrate the insulating layer and thereby the conductor electrical contact.
  • the depressions of the rough surface do not usually have to be in contact with the conductor, but can do so.
  • the insulating layer is formed in particular by a film, lacquer and / or a polymer layer.
  • the conductor can be a conductive layer, for example, which is arranged on the insulating layer.
  • Insulating layers and conductors are preferably a film laminated with a metal layer, which is laminated onto the component with its contact point, the elevations of the rough surface of the contact point penetrating the film and coming into contact with or penetrating into the metal layer.
  • the contact point is produced with a rough surface with elevations. This can be done, for example, by electroless plating, electrodeposition and / or printing.
  • Advantageous refinements of the method for producing the contact point result from the advantageous refinements of the contact point and vice versa.
  • a contact point with a rough surface with elevations is used, which penetrate the insulating layer and thereby form an electrical contact to the conductor.
  • the layer can in particular be produced from a non-liquid material, such as a film.
  • the figure shows a product comprising a component with a contact point, an insulating layer and a conductor.
  • Components with an edge length of up to 100 ⁇ m x 100 ⁇ m and up to a thickness of 10 ⁇ m are used. This means that a large number of components are contained per wafer or substrate and processes at the wafer and substrate level converted to the component are therefore very inexpensive. With suitable processes, very rough, conductive surfaces are created in the wafer or substrate composite on the contact pads of the components.
  • the processes can be external currentless or galvanic deposition processes (oxide treatment) or printing processes, predominantly stencil printing, or a combination of these processes.
  • the process parameters in these processes are selected so that, contrary to the usual objective, a rough surface with warts, whiskers, needles and / or printed tips is created.
  • a suitable choice of material ensures that this rough surface has mechanical stability, that is, it cannot be leveled even by a low pressure. This can be done, for example, by using nickel, palladium and the like or nickel-cobalt alloys as the base material or as a covering layer of the pad.
  • a tempering step can also help to make the surface of the pad significantly rougher due to the growth of whiskers.
  • the wafer or the substrate is mechanically thinly ground and polished from the back.
  • a plastic film with metal lamination is laminated on the components and the one-sided adhesive carrier film so that the components are covered on all sides with the film.
  • the metal of the metal lamination is preferably aluminum or copper.
  • This lamination can take place, for example, in a roll laminator, an autoclave or a hot press. The temperature and pressure are selected so that the plastic film softens and the raised, rough, harder pads penetrate into the metal lamination. This contacting step can be supported by a subsequent roll-to-roll press process using ultrasound.
  • the metal on the plastic film is now structured using known, inexpensive methods. Here, the pattern is adjusted to the components. For example, an etching resist is partially printed on this metal and then the metal layer in the areas that remain free is removed by etching. The etching resist can remain as protection or can also be removed afterwards.
  • the carrier film can now be removed mechanically.
  • carrier films are also possible here, in which the detachment takes place thermally.
  • the carrier film can also be removed before the metal structuring.
  • the carrier film can also serve as a component of the module as a rear protection of the unhoused components.
  • connection can be made by using preformed pressing tools in standard presses.
  • the aluminum contact pads of chips are coated without external current in the wafer assembly.
  • the aluminum surface is cleaned, a thin layer of zincate is deposited in an exchange reaction with aluminum and the pads are increased by depositing nickel.
  • a suitable choice of process parameters means that a hard nickel-cobalt alloy is deposited very unevenly, also without external current.
  • Such a suitable choice is, for example, that the use of wetting agents in the nickel-cobalt electrolyte is reduced or is completely dispensed with.
  • high current densities can be used for the deposition.
  • the nickel surface is oxidized, for example by a tempering step, before the nickel-cobalt alloy is deposited. The procedures mentioned form warts, needle-like structures and / or whiskers. An approximately 100 n thick gold layer completes the pad structure.
  • the wafer is thinned mechanically and etched so that a component thickness of less than 50 ⁇ m is achieved.
  • the components are placed on a silicone adhesive-coated polyimide film using a pick and place device.
  • a plastic film made of PET coated with approx. 10 ⁇ m aluminum is laminated on under pressure and temperature and possibly ultrasound so that the raised pads touch the aluminum and are even pressed into the softer aluminum.
  • the aluminum is structured by screen printing an etching resist and etching the free aluminum with, for example, hydrochloric acid.
  • the polyimide adhesive film is peeled off mechanically.
  • the product 1 shows a substrate composite with products manufactured in this way, or such a product 1 in an enlargement.
  • the product 1 has a component 2 with a contact point 3, 4 with a rough surface.
  • the contact point 3, 4 contains a contact pad 3 and a bump 4.
  • the rough surface of the contact point 3, 4 has penetrated an insulating layer 5 in the form of a film and has penetrated into a conductor 6 in the form of a metal lamination of the film 5.
  • elevations of the rough surface of the contact point 3, 4, but due to the deep penetration in this exemplary embodiment also simultaneously depressions of the rough surface of the contact point 3, 4, establish an electrical contact between the conductor 6 in the form of the metal lamination and the component 2.
  • a metal-clad film can be used for lamination. An expensive metallization, for example by sputtering or electroplating, is eliminated.
  • the module produced in this way is absolutely minimized in height. Only the component thickness, the thickness of the insulating layer and the thickness of the metal cladding contribute to the overall height.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

A contact point (3, 4) for an electric component (2), provided with a rough surface with elevations which pass through an insulating layer enabling contact to be established between a conductor (6) and the component (2).

Description

Beschreibungdescription
Raue KontakteRough contacts
Du.rch das Einbringen von elektronischen Modulen in Smart Cards, Reisepässe oder in Dokumente kann die Fälschungssicherheit erheblich erhöht werden. Diese Module müssen sehr dünn, also unter 100 μm dick, sein. Darüber hinaus wird gefordert, dass sie sehr kostengünstig, ultradünn, flexibel, Raum sparend und eventuell auch mit selbstgenerierender Energieversorgung in einer Fertigungslinie integrierbar bei niedrigen Material- und Herstellungskosten produziert werden können. Aus dem Bereich der RF-ID-Antennenfertigung sind Verfahren bekannt, strukturierte metallische Strukturen kostengünstig herzustellen. Der darüber hinaus notwendige, aber kostenrelevante Prozessschritt ist das Kontaktieren von Bauelementen. Diese Bauelemente können Halbleiter-ICs, passive Komponenten, aber auch Sensoren oder Displays sein.The protection against counterfeiting can be considerably increased by inserting electronic modules into smart cards, passports or documents. These modules have to be very thin, i.e. less than 100 μm thick. In addition, it is required that they can be produced very cost-effectively, ultra-thin, flexible, space-saving and possibly also integrable in a production line with self-generating energy supply at low material and manufacturing costs. Methods are known from the field of RF-ID antenna production for producing structured metallic structures at low cost. The additional, but cost-relevant process step is the contacting of components. These components can be semiconductor ICs, passive components, but also sensors or displays.
Zur Herstellung von miniaturisierten, ultradünnen Modulen kommt überwiegend eine Verarbeitung von nackten, also ungenausten Bauelementen in Frage.For the production of miniaturized, ultra-thin modules, processing of bare, i.e. inaccurate components is predominantly possible.
Vox der Kontaktierung der Bauelemente wird eine Folie oder ein fester Träger hergestellt, der eine oder mehrere s rukturierte Metallebenen aufweist.Vox the contacting of the components, a film or a solid carrier is produced, which has one or more structured metal levels.
Übliche Kontaktierverfahren sind nun:Usual contacting methods are now:
Platzieren der Bauelemente in einen Klebstoff (Diebonden) , Kontaktieren durch Drahtbonden.Place the components in an adhesive (die bonding), contact by wire bonding.
Aufbringen von Lot/Lotpaste oder Leitklebstoff auf Substrat und/oder Bauelement. Kontaktierung durch Flip- Chip-Platzierung und Reflowlöten bzw. Kleberhärtung. - Aufbringen von anisotrop leitfähigen Klebstoffen oder Folien. Kontaktierung durch Flip-Chip-Platzierung und Heißsiegeln, also unter Druck und Temperatur. - Ein ebenfalls bekanntes Verfahren ist eine Durchkontaktierung unter Verwendung eines nicht leitenden Klebers. Hierbei werden die Pads der Bauelemente erhöht, das heißt so genannte Bumps erzeugt. Von der Firma Nanopierce werden separate, harte, spitze, leitfähige Partikel auf den Oberflächen der Bumps fixiert, die den elektrischen Kontakt verbessern sollen. Die Bauelemente werden in den nicht leitenden Klebstoff gesetzt und unter Temperatur und Druck einzeln kontaktiert.Applying solder / solder paste or conductive adhesive to the substrate and / or component. Contacting through flip chip placement and reflow soldering or adhesive hardening. - Application of anisotropically conductive adhesives or foils. Contacting through flip chip placement and heat sealing, i.e. under pressure and temperature. - A method which is also known is a plated-through hole using a non-conductive adhesive. The pads of the components are increased, that is to say so-called bumps are generated. The company Nanopierce fixes separate, hard, pointed, conductive particles to the surfaces of the bumps, which are supposed to improve the electrical contact. The components are placed in the non-conductive adhesive and contacted individually under temperature and pressure.
Davon ausgehend liegt der Erfindung die Aufgabe zugrunde, eine Möglichkeit des kostengünstigen Kontaktierens von Bauelementen zur Herstellung von ultradünnen Modulen anzugeben.Proceeding from this, the invention is based on the object of specifying a possibility of cost-effective contacting of components for the production of ultra-thin modules.
Diese Aufgabe wird durch die in den unabhängigen Ansprüchen angegebenen Erfindungen gelöst. Vorteilhafte Ausgestaltungen ergeben sich aus den abhängigen Ansprüchen.This object is achieved by the inventions specified in the independent claims. Advantageous refinements result from the dependent claims.
Dementsprechend weist eine Kontaktstelle für ein elektrisches Bauelement eine raue Oberfläche mit Erhebungen auf. Die Erhebungen sind also nicht durch nachträglich an der Oberfläche fixierte Partikel geschaffen, sondern die Kontaktstelle selbst ist mit einer rauen Oberfläche hergestellt bzw. ausgebildet. Dadurch erübrigt sich der zusätzliche Fertigungsschritt des separaten Anordnens von Partikeln.Accordingly, a contact point for an electrical component has a rough surface with elevations. The elevations are therefore not created by particles subsequently attached to the surface, but the contact point itself is produced or formed with a rough surface. This eliminates the additional manufacturing step of arranging particles separately.
Die Erhebungen der rauen Oberfläche sind insbesondere Warzen, Nadeln, Spitzen und/oder Whisker. Die Erhebungen sind vorzugsweise größer als 1 μm, insbesondere größer als 5 μm aber kleiner als 50 μm, insbesondere kleiner als 20 μm.The elevations of the rough surface are in particular warts, needles, tips and / or whiskers. The elevations are preferably larger than 1 μm, in particular larger than 5 μm, but smaller than 50 μm, in particular smaller than 20 μm.
Um eine leitfähige, gut kontaktierbare und korrosionsfeste Oberfläche zu bilden, können die Erhebungen beispielsweise mit einer Goldschicht überzogen sein.In order to form a conductive, easily contactable and corrosion-resistant surface, the elevations can be coated with a gold layer, for example.
Durch geeignete Materialwahl wird erreicht, dass die raue Oberfläche eine mechanische Stabilität aufweist, also nicht bereits durch geringen Druck eingeebnet werden kann. Dies kann beispielsweise durch die Verwendung von Nickel, Palladium und ähnlichem oder einer Nickel-Kobalt-Legierung als Basismaterial oder als Abdeckschicht der Kontaktstelle geschehen. Die Kontaktstelle ist insbesondere ein Kontaktpad und/oder ein Bump.A suitable choice of material ensures that the rough surface has mechanical stability, ie it cannot be leveled by low pressure. This can be done, for example, by using nickel, palladium and the like or a nickel-cobalt alloy as the base material or as a covering layer of the contact point. The contact point is in particular a contact pad and / or a bump.
Gemäß der Aufgabe der Erfindung übernimmt die Kontaktstelle in einem Erzeugnis, das ein Bauelement mit dex Kontaktstelle, eine isolierende Schicht und einen Leiter aufweist, folgende Funktion: Die Kontaktstelle ist mit einer rauen Oberfläche mit Erhebungen ausgebildet, die die isolierende Schicht durchdringen und dadurch den Leiter elektrisch kontaktieren. Dabei müssen die Vertiefungen der rauen Oberfläche in der Regel bzw. Mehrzahl nicht in Kontakt mit dem Leiter stehen, können dies aber.According to the object of the invention, the contact point in a product that has a component with a dex contact point, an insulating layer and a conductor takes on the following function: the contact point is formed with a rough surface with elevations which penetrate the insulating layer and thereby the conductor electrical contact. The depressions of the rough surface do not usually have to be in contact with the conductor, but can do so.
Die isolierende Schicht ist insbesondere durch eine Folie, Lack und/oder eine Polymerschicht gebildet. Der Leiter kann beispielsweise eine leitende Schicht sein, die an der isolierenden Schicht angeordnet ist. Vorzugsweise sind isolierende Schichten und Leiter, eine mit einer Metallschicht kaschierte Folie, die auf das Bauelement mit seiner Kontaktstelle auflaminiert wird, wobei die Erhebungen der rauen Oberfläche der Kontaktstelle die Folie durchdringen und in Kontakt mit der Metallschicht geraten bzw. in diese eindrinσen. In einem Verfahren zur Herstellung einer Kontaktstelle einer der oben genannten Arten wird die Kontaktstelle mit einer rauen Oberfläche mit Erhebungen hergestellt. Dies kann beispielsweise durch außenstromlose Abscheidung, galvanische Abscheidung und/oder Drucken geschehen. Vorteilhafte Ausgestaltungen des Verfahrens zur Herstellung der Kontaktstelle ergeben sich aus den vorteilhaften Ausgestaltungen der Kontaktstelle und umgekehrt.The insulating layer is formed in particular by a film, lacquer and / or a polymer layer. The conductor can be a conductive layer, for example, which is arranged on the insulating layer. Insulating layers and conductors are preferably a film laminated with a metal layer, which is laminated onto the component with its contact point, the elevations of the rough surface of the contact point penetrating the film and coming into contact with or penetrating into the metal layer. In a method for producing a contact point of one of the types mentioned above, the contact point is produced with a rough surface with elevations. This can be done, for example, by electroless plating, electrodeposition and / or printing. Advantageous refinements of the method for producing the contact point result from the advantageous refinements of the contact point and vice versa.
In einem Verfahren zum Herstellen eines Erzeugnisses aufweisend ein Bauelement mit einer Kontaktstelle, eine isolierende Schicht und einen Leiter wird eine Kontaktstelle mit einer rauen Oberfläche mit Erhebungen verwendet, welche die isolierende Schicht durchdringen und dadurch einen elektrischen Kontakt zum Leiter bilden. Beim Herstellen des Erzeugnisses kann die Schicht insbesondere aus einem nichtflüssigen Material hergestellt werden, wie beispielsweise einer Folie. Vorteilhafte Ausgestaltungen des Verfahrens zum Herstellen des Erzeugnisses ergeben sich analog zu den vorteilhaften Ausgestaltungen des Erzeugnisses und der Kontaktstelle und umgekehrt.In a method for producing a product comprising a component with a contact point, an insulating layer and a conductor, a contact point with a rough surface with elevations is used, which penetrate the insulating layer and thereby form an electrical contact to the conductor. When producing the product, the layer can in particular be produced from a non-liquid material, such as a film. Advantageous refinements of the method for producing the product result analogously to the advantageous refinements of the product and the contact point and vice versa.
Weitere Vorteile und Merkmale der Erfindung ergeben sich aus der Beschreibung eines Ausführungsbeispiels anhand derFurther advantages and features of the invention result from the description of an exemplary embodiment with reference to the
Zeichnung. Dabei zeigt die Figur ein Erzeugnis aufweisend ein Bauelement mit einer Kontaktstelle, eine isolierende Schicht und einen Leiter.Drawing. The figure shows a product comprising a component with a contact point, an insulating layer and a conductor.
In der Regel werden in miniaturisierten Modulen sehr kleineAs a rule, miniaturized modules become very small
Bauelemente mit bis zu 100 μm x 100 μm Kantenlänge und bis zu in 10 μm Dicke eingesetzt. Das bedeutet, dass pro Wafer oder Substrat sehr viele Bauelemente enthalten sind und dadurch Prozesse auf Wafer- und Substratebene umgerechnet auf das Bauelement sehr kostengünstig sind. Mit geeigneten Prozessen werden im Wafer- oder Substratverbund auf den Kontaktpads der Bauelemente sehr raue, leitfähige Oberflächen erzeugt. Die Prozesse können außenstromlose oder galvanische Abscheideverfahren (Oxid- Treatment) oder Druckprozesse, vorwiegend Schablonendruck, sein oder auch eine Kombination dieser Verfahren.Components with an edge length of up to 100 μm x 100 μm and up to a thickness of 10 μm are used. This means that a large number of components are contained per wafer or substrate and processes at the wafer and substrate level converted to the component are therefore very inexpensive. With suitable processes, very rough, conductive surfaces are created in the wafer or substrate composite on the contact pads of the components. The processes can be external currentless or galvanic deposition processes (oxide treatment) or printing processes, predominantly stencil printing, or a combination of these processes.
Die Prozessparameter werden bei diesen Verfahren so gewählt, dass entgegen der üblichen Zielsetzung eine raue Oberfläche mit Warzen, Whiskern, Nadeln und/oder gedruckten Spitzen entsteht. Durch geeignete Materialwahl wird erreicht, dass diese raue Oberfläche eine mechanische Stabilität aufweist, also nicht bereits durch einen geringen Druck eingeebnet werden kann. Dies kann beispielsweise durch die Verwendung von Nickel, Palladium und ähnlichem oder Nickel-Kobalt- Legierungen als Basismaterial oder als Abdeckschicht des Pads geschehen. Auch ein Temperschritt kann durch das Wachstum von Whiskern dazu beitragen, die Oberflächen des Pads deutlich rauer zu machen.The process parameters in these processes are selected so that, contrary to the usual objective, a rough surface with warts, whiskers, needles and / or printed tips is created. A suitable choice of material ensures that this rough surface has mechanical stability, that is, it cannot be leveled even by a low pressure. This can be done, for example, by using nickel, palladium and the like or nickel-cobalt alloys as the base material or as a covering layer of the pad. A tempering step can also help to make the surface of the pad significantly rougher due to the growth of whiskers.
Nach Erzeugung der rauen leitfähigen Padoberflache wird der Wafer bzw. das Substrat von der Rückseite her mechanisch dünngeschliffen und poliert.After creating the rough conductive pad surface, the wafer or the substrate is mechanically thinly ground and polished from the back.
Ein vorteilhafter, kostengünstiger Roll-to-Roll-P ozessablauf zur Herstellung der ultradünnen Module ist wie folgt:An advantageous, cost-effective roll-to-roll process for producing the ultra-thin modules is as follows:
- Aufsetzen der gedünnten, ungehäusten Bauelemente in einer vorgegebenen geometrischen Anordnung auf eine einseitig klebende Trägerfolie. Die Kontaktstellen in Form von Kontaktpads mit der besonders rauen Oberfläche sind hierbei von der Klebefolie abgekehrt.- Placing the thinned, unhoused components in a predetermined geometric arrangement on a one-sided adhesive carrier film. The contact points in the form of contact pads with the particularly rough surface are turned away from the adhesive film.
- Eine Kunststofffolie mit Metallkaschierung wird auf die Bauelemente und die einseitig klebende Trägerfolie so laminiert, dass die Bauelemente allseitig mit der Folie umhüllt werden. Das Metall der Metallkaschierunσ ist vorzugsweise Aluminium oder Kupfer. Dieses Laminieren kann beispielsweise in einem Rollenlaminator, einem Autoklaven oder einer Heißpresse erfolgen. Temperatur und Druck werden hierbei so gewählt, dass die Kunststofffolie erweicht und so die erhabenen, rauen, härteren Pads in die Metallkaschierung eindringen. Dieser Kontaktierschritt kann durch einen nachfolgenden Roll-to—Roll-Pressprozess durch Ultraschall unterstützt werden. - Das Metall auf der Kunststofffolie wird nun mit bekannten kostengünstigen Verfahren strukturiert . Hierbei wird das Muster auf die Bauelemente justiert. Beispielsweise wird ein Ätzresist auf dieses Metall partiell gedruckt und dann die Metallschicht in den frei gebliebenen Bereichen durch Ätzen entfernt. Der Ätzresist kann als Schutz verbleiben oder auch anschließend entfernt werden .- A plastic film with metal lamination is laminated on the components and the one-sided adhesive carrier film so that the components are covered on all sides with the film. The metal of the metal lamination is preferably aluminum or copper. This lamination can take place, for example, in a roll laminator, an autoclave or a hot press. The temperature and pressure are selected so that the plastic film softens and the raised, rough, harder pads penetrate into the metal lamination. This contacting step can be supported by a subsequent roll-to-roll press process using ultrasound. - The metal on the plastic film is now structured using known, inexpensive methods. Here, the pattern is adjusted to the components. For example, an etching resist is partially printed on this metal and then the metal layer in the areas that remain free is removed by etching. The etching resist can remain as protection or can also be removed afterwards.
- Um die Dicke der Module weiter zu minimieren, kann nun die Trägerfolie mechanisch abgezogen werden. Es kommen hier aber auch Trägerfolien in Frage, bei denen das Ablösen thermisch erfolgt. Das Ablösen der Trägerfolie kann jedoch auch vor der Metallstrukturierung stattfinden. Die Trägerfolie kann allerdings als Bestandteil des Moduls auch als rückseitiger Schutz der ungehäusten Bauelemente dienen.- To further minimize the thickness of the modules, the carrier film can now be removed mechanically. However, carrier films are also possible here, in which the detachment takes place thermally. However, the carrier film can also be removed before the metal structuring. However, the carrier film can also serve as a component of the module as a rear protection of the unhoused components.
Denkbar ist es auch, die Strukturierung des aufkaschierten Metalls vor dem Laminierprozess durchzuführen. Diese vorgefertigte Kunststofffolie mit Metallstrukturen wird nun auf die Bauelemente justiert aufgelegt und wie oben beschrieben laminiert.It is also conceivable to structure the laminated metal before the lamination process. This prefabricated plastic film with metal structures is now placed on the components in an adjusted manner and laminated as described above.
Die Verbindung kann durch Einsatz von vorgeformten Presswerkzeugen in handelsüblichen Pressen erfolgen.The connection can be made by using preformed pressing tools in standard presses.
Das kostengünstige Kontaktieren von Bauelementen durch eine besonders raue Oberfläche der Kontaktstellen in Form von Kontaktpads weist also beispielsweise folgende Prozessschritte auf:The cost-effective contacting of components through a particularly rough surface of the contact points in the form of Contact pads thus have the following process steps, for example:
- Die Aluminium-Kontaktpads von Chips werden im Waferverbund außenstromlos beschichtet. Hierbei wird die Aluminiumoberfläche gereinigt, eine dünne Zinkatschicht in einer Austauschreaktion mit Aluminium abgeschieden und eine Erhöhung der Pads über die Abscheidung von Nickel erreicht. Durch geeignete Wahl der Prozessparameter wird nun, ebenfalls außenstromlos, eine harte Nickel-Kobalt- Legierung sehr ungleichmäßig abgeschieden. Eine solche geeignete Wahl besteht beispielsweise darin, dass der Einsatz von Netzmitteln im Nickel-Kobalt-Elektrolyt reduziert oder auf diese vollständig verzichtet wird. Alternativ oder ergänzend kann beim Abscheiden mit hohen Stromdichten gearbeitet werden. Eine weitere mögliche Alternative oder Ergänzung besteht darin, dass die Nickeloberfläche bereits vor dem Abscheiden der Nickel- Kobalt-Legierung beispielsweise durch einen Temperschritt oxidiert wird. Durch die genannten Vorgehensweisen bilden sich Warzen, nadelartige Gebilde und/oder Whisker. Eine ca. 100 n dicke Goldschicht schließt den Padaufbau ab.- The aluminum contact pads of chips are coated without external current in the wafer assembly. Here, the aluminum surface is cleaned, a thin layer of zincate is deposited in an exchange reaction with aluminum and the pads are increased by depositing nickel. A suitable choice of process parameters means that a hard nickel-cobalt alloy is deposited very unevenly, also without external current. Such a suitable choice is, for example, that the use of wetting agents in the nickel-cobalt electrolyte is reduced or is completely dispensed with. Alternatively or additionally, high current densities can be used for the deposition. Another possible alternative or addition is that the nickel surface is oxidized, for example by a tempering step, before the nickel-cobalt alloy is deposited. The procedures mentioned form warts, needle-like structures and / or whiskers. An approximately 100 n thick gold layer completes the pad structure.
- Der Wafer wird mechanisch gedünnt und poliergeätzt, so dass eine Bauelementdicke von unter 50 μm erreicht wird.- The wafer is thinned mechanically and etched so that a component thickness of less than 50 μm is achieved.
- Die Bauelemente werden in mit einem Pick- und Place-Gerät justiert auf eine Silikonklebstoff-beschichtete Polyimidfolie gesetzt.- The components are placed on a silicone adhesive-coated polyimide film using a pick and place device.
- Eine mit ca. 10 μm Aluminium beschichtete Kunststofffolie aus PET wird unter Druck und Temperatur und eventuell Ultraschall so auflaminiert, dass die erhöhten Pads das Aluminium berühren und sogar in das weichere Aluminium eingepresst werden. - Das Aluminium wird durch Siebdruck eines Ätzresists und Ätzen des freien Aluminiums mit beispielsweise Salzsäure strukturiert .- A plastic film made of PET coated with approx. 10 μm aluminum is laminated on under pressure and temperature and possibly ultrasound so that the raised pads touch the aluminum and are even pressed into the softer aluminum. - The aluminum is structured by screen printing an etching resist and etching the free aluminum with, for example, hydrochloric acid.
- Die Polyimidklebefolie wird mechanisch abgezogen.- The polyimide adhesive film is peeled off mechanically.
In Figur 1 erkennt man einen Substratverbund mit derartig hergestellten Erzeugnissen bzw. ein solches Erzeugnis 1 in einer Vergrößerung. Das Erzeugnis 1 weist ein Bauelement 2 mit einer Kontaktstelle 3, 4 mit einer rauen Oberfläche auf. Die Kontaktstelle 3, 4 enthält ein Kontaktpad 3 und einen Bump 4. Die raue Oberfläche der Kontaktstelle 3, 4 hat eine isolierende Schicht 5 in Form einer Folie durchdrungen und ist in einen Leiter 6 in Form einer Metall kaschierung der Folie 5 eingedrungen. Dadurch stellen Erhebungen der rauen Oberfläche der Kontaktstelle 3, 4, aber aufgrund des tiefen Eindringens in diesem Ausführungsbeispiel auch gleichzeitig Vertiefungen der rauen Oberfläche der Kontaktstelle 3, 4, einen elektrischen Kontakt zwischen dem Leiter 6 in Form der Metallkaschierung und dem Bauelement 2 her .1 shows a substrate composite with products manufactured in this way, or such a product 1 in an enlargement. The product 1 has a component 2 with a contact point 3, 4 with a rough surface. The contact point 3, 4 contains a contact pad 3 and a bump 4. The rough surface of the contact point 3, 4 has penetrated an insulating layer 5 in the form of a film and has penetrated into a conductor 6 in the form of a metal lamination of the film 5. As a result, elevations of the rough surface of the contact point 3, 4, but due to the deep penetration in this exemplary embodiment also simultaneously depressions of the rough surface of the contact point 3, 4, establish an electrical contact between the conductor 6 in the form of the metal lamination and the component 2.
Das Kontaktierverfahren durch die besonders rauen Padoberflachen weist folgende Vorteile auf :The contacting process due to the particularly rough pad surfaces has the following advantages:
- Kostengünstiges Erzeugen von rauen, leitfähigen Padoberflachen im Wafer- oder Substratverbund.- Cost-effective generation of rough, conductive pad surfaces in the wafer or substrate composite.
- Vollflächige Verklebung von Bauelement und Kunststofffolie durch das Erweichen der Folie im Laminierprozess . Dadurch wird eine mechanisch robuste Verbindung von Bauelementen und Folie erreicht.- Full-surface bonding of component and plastic film by softening the film in the lamination process. A mechanically robust connection of components and film is thereby achieved.
- Simultane und damit äußerst kostengünstige Kontaktierung aller Bauelemente. - Durch die Verwendung von gedünnten Bauelementen kann eine metallkaschierte Folie beim Laminieren eingesetzt werden. Ein teueres Metallisieren beispielsweise durch Sputtern oder Galvanik entfällt.- Simultaneous and therefore extremely cost-effective contacting of all components. - Through the use of thinned components, a metal-clad film can be used for lamination. An expensive metallization, for example by sputtering or electroplating, is eliminated.
- Für die elektrische Kontaktierung ist kein teuerer leitfähiger Klebstoff oder ein zusätzlicher Lötprozess notwendig.- No expensive conductive adhesive or an additional soldering process is required for electrical contacting.
- Das so hergestellte Modul ist in dex Bauhöhe absolut minimiert. Zur Bauhöhe tragen nur die Bauelementdicke, die Dicke der isolierenden Schicht und die Dicke der Metallkaschierung bei. - The module produced in this way is absolutely minimized in height. Only the component thickness, the thickness of the insulating layer and the thickness of the metal cladding contribute to the overall height.

Claims

Patentansprüche claims
1. Kontaktstelle für ein elektrisches Bauelement (2), dadurch gekennzeichnet, dass die Kontaktstelle (3, 4) mit einer rauen Oberfläche mit Erhebungen ausgebildet ist.1. Contact point for an electrical component (2), characterized in that the contact point (3, 4) is formed with a rough surface with elevations.
2. Kontaktstelle nach Anspruch 1, dadurch gekennzeichnet, dass die Erhebungen Warzen, Nadeln, Spitzen und/oder Whisker sind.2. Contact point according to claim 1, characterized in that the elevations are warts, needles, tips and / or whiskers.
3. Kontaktstelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Erhebungen größer als 1 μm sind, insbesondere größer als 5 μm.3. Contact point according to one of the preceding claims, characterized in that the elevations are larger than 1 μm, in particular larger than 5 μm.
4. Kontaktstelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Erhebungen kleiner als 50 μm sind, insbesondere kleiner als 25 μm.4. Contact point according to one of the preceding claims, characterized in that the elevations are less than 50 microns, in particular less than 25 microns.
5. Kontaktstelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Erhebungen mit einer Goldschicht überzogen sind.5. Contact point according to one of the preceding claims, characterized in that the elevations are coated with a gold layer.
6. Kontaktstelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Erhebungen Nickel, Palladium und/oder Nickel-Kobalt- Legierungen enthalten.6. Contact point according to one of the preceding claims, characterized in that the elevations contain nickel, palladium and / or nickel-cobalt alloys.
7. Kontaktstelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Kontaktstelle ein Kontaktpad und/oder ein Bump ist.7. Contact point according to one of the preceding claims, characterized in that the contact point is a contact pad and / or a bump.
8. Erzeugnis aufweisend8. Having product
- ein Bauelement (2) mit einer Kontaktstelle (3, 4), - eine isolierende Schicht (5) , - einen Leiter ( 6 ) , d a d u r c h g e k e n n z e i c h n e t , dass die Kontaktstelle (3, 4) mit einer rauen Oberfläche mit Erhebungen ausgebildet ist und dass die Erhebungen die isolierende Schicht (5) durchdringen und dadurch den Leiter (6) elektrisch kontaktieren.- a component (2) with a contact point (3, 4), - an insulating layer (5), - a conductor (6), characterized in that the contact point (3, 4) is formed with a rough surface with elevations and that the elevations penetrate the insulating layer (5) and thereby the conductor (6 ) contact electrically.
9. Erzeugnis nach Anspruch 8, dadurch gekennzeichnet, dass die isolierende Schicht durch eine Folie, Lack und/oder eine Polymerschicht gebildet ist.9. Product according to claim 8, characterized in that the insulating layer is formed by a film, lacquer and / or a polymer layer.
10. Erzeugnis nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass der Leiter (6) eine leitende Schicht ist, die an der isolierenden Schicht (5) angeordnet ist.10. Product according to claim 8 or 9, characterized in that the conductor (6) is a conductive layer which is arranged on the insulating layer (5).
11. Verfahren zur Herstellung einer Kontaktstelle (3, 4) nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass die Kontaktstelle (3, 4) mit einer rauen Oberfläche mit11. A method for producing a contact point (3, 4) according to one of claims 1 to 7, characterized in that the contact point (3, 4) with a rough surface
Erhebungen hergestellt wird.Surveys is established.
12. Verfahren nach Anspruch 11, bei dem auf der Kontaktstelle (3, 4) eine raue Oberfläche mit einem der folgenden Verfahren erzeugt wird:12. The method according to claim 11, in which a rough surface is produced on the contact point (3, 4) using one of the following methods:
- Außenstromlose Abscheidung,- separation without external current,
- galvanische Abscheidung und/oder - Drucken.- galvanic deposition and / or - printing.
13. Verfahren zum Herstellen eines Erzeugnisses nach einem der Ansprüche 8 bis 10 aufweisend ein Bauelement (2) mit einer Kontaktstelle (3, 4) , eine isolierende Schicht (5) und einen Leiter (6) ,13. A method for producing a product according to one of claims 8 to 10, comprising a component (2) with a contact point (3, 4), an insulating layer (5) and a conductor (6),
- bei dem eine Kontaktstelle mit einer rauen Oberfläche mit Erhebungen erzeugt und/oder verwendet wird, - bei dem die Erhebungen die isolierende Schicht (5) durchdringen und- in which a contact point with a rough surface with elevations is created and / or used, - In which the elevations penetrate the insulating layer (5) and
- bei dem die Erhebungen dadurch den Leiter (6) elektrisch kontaktieren . - in which the elevations thereby electrically contact the conductor (6).
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