Recherche Images Maps Play YouTube Actualités Gmail Drive Plus »
Connexion
Les utilisateurs de lecteurs d'écran peuvent cliquer sur ce lien pour activer le mode d'accessibilité. Celui-ci propose les mêmes fonctionnalités principales, mais il est optimisé pour votre lecteur d'écran.

Brevets

  1. Recherche avancée dans les brevets
Numéro de publicationWO2005059617 A2
Type de publicationDemande
Numéro de demandePCT/EP2004/014062
Date de publication30 juin 2005
Date de dépôt10 déc. 2004
Date de priorité15 déc. 2003
Autre référence de publicationEP1697798A2, WO2005059617A3
Numéro de publicationPCT/2004/14062, PCT/EP/2004/014062, PCT/EP/2004/14062, PCT/EP/4/014062, PCT/EP/4/14062, PCT/EP2004/014062, PCT/EP2004/14062, PCT/EP2004014062, PCT/EP200414062, PCT/EP4/014062, PCT/EP4/14062, PCT/EP4014062, PCT/EP414062, WO 2005/059617 A2, WO 2005059617 A2, WO 2005059617A2, WO-A2-2005059617, WO2005/059617A2, WO2005059617 A2, WO2005059617A2
InventeursSusanne Beder, Wolfgang Singer
DéposantCarl Zeiss Smt Ag
Exporter la citationBiBTeX, EndNote, RefMan
Liens externes:  Patentscope, Espacenet
Projection objective having a high aperture and a planar end surface
WO 2005059617 A2
Résumé
A projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n ≥ 1.6 at the operating wavelength.
Revendications  (Le texte OCR peut contenir des erreurs.)
Claims
1. Projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines comprising: a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective; wherein at least one optical element is a high-index optical element made from a high-index material with a refractive index n > 1.6 at the operating wavelength.
2. Projection objective according to Claim 1 , wherein the high-index material has a refractive index n > 1.8 at the operating wavelength.
3. Projection objective according to Claim 1 or 2, wherein the high- index material is sapphire.
4. Projection objective according to Claim 1 or 2, wherein the high- index material is germanium dioxide.
5. Projection objective according to one of the preceding Claims, wherein an object-side numerical aperture NAobj is greater than 0.3.
6. Projection objective according to Claim 5, wherein the object-side numerical aperture NAobj >0.36 in conjunction with an absolute reduction ratio of I β I < 0.25.
7. Projection objective according to one of the proceeding Claims, having a first high-index optical element and at least one second high-index optical element.
8. Projection objective according to Claim 7, wherein the first high- index optical element and the second high-index optical element are each made from a high-index material exhibiting birefringence defining an orientation of birefringence of each optical element, where the first and second high-index optical elements are installed differently with regard to the orientation of the birefringence such that effects of birefringence caused by the high-index optical elements are at least partly compensated.
9. Projection objective according to one of the preceding Claims, wherein the projection objective has a last optical element closest to the image plane and wherein the last optical element is at least partly made of a high-index material with refractive index n > 1.6.
10. Projection objective according to Claim 9, wherein the last optical element is a monolithic plano-convex lens made of a high-index material with refractive index n > 1.6.
11. Projection objective according to Claim 9, wherein the last optical element consists of at least two optical elements in optical contact with each other along a splitting interface, where at least one of the optical elements forming the last optical element consists of a high- index material with refractive index n > 1.6.
12. Projection objective according to Claim 9, wherein the last optical element consists of an entry side plano-convex lens element having a curved entry side and a planar exit side and an exit side plane parallel plate in optical contact with the plano-convex lens element along a planar splitting surface.
13. Projection objective according to Claim 12, wherein the plano-convex lens element consists of a high-index material with a refractive index n > 1.6 and wherein the exit side plane parallel plate consists of fused silica.
14. Projection objective according to Claim 12, wherein the plano-convex lens element consists of fused silica and wherein the exit side plane parallel plate consists of a high-index material with a refractive index n > 1.6.
15. Projection objective according to Claim 1 1 , wherein the last optical element is shaped as a plano-convex lens and a splitting surface is curved such that both optical elements contacted at the splitting surface are lens parts with similar refractive power.
16. Projection objective according to one of the preceding Claims, wherein the projection objective is designed as an immersion objective adapted with reference to aberrations such that an image side working distance between a last optical element and the image plane is filled up with an immersion medium with a refractive index substantially greater than 1.
17. Projection objective according to Claim 16, wherein the projection objective is adapted to an immersion fluid which has a refractive index greater than 1.4 at the operating wave length.
18. Projection objective according to Claim 17, wherein the projection objective is designed for 193 nm operating wavelength and wherein the immersion fluid is cyclohexane.
19. Projection objective according to one of the preceeding Claims 1 to 15, wherein the projection objective is designed as a solid immersion objective having a finite image side working distance in the order of the operating wavelength or below such that evanescent fields exiting from an image side exit surface of the projection objective can be used for imaging.
20. Projection objective according to one of the proceeding Claims 1 to 15, wherein the projection objective is designed for solid immersion lithography where an image side exit surface of the projection objective is in mechanical contact with an incoupling surface associated with a substrate to be exposed.
21. Projection objective according to one of the preceding Claims, wherein an image side numerical aperture NA is greater than 1.3.
22. Projection objective according to one of the preceding Claims, wherein a pupil surface positioned closest to the image plane is positioned in a region of convergent beam between a region of a local maximum of beam diameter closest to the image plane and the image plane.
23. Projection objective having an image plane and a lens furthest therefrom and starting from which there is a convergent beam path up to the image plane, in which a pupil plane or system aperture is arranged at a distance of at least 10 mm on the image side of said lens.
24. Microlithography projection exposure method for imaging a pattern provided on a mask positioned in an object plane of a projection objective onto a substrate provided in an image plane of the projection objective, in which a microlithography projection objective according to at least one of the preceding claims is used and an immersion fluid is introduced between a last lens of the microlithography projection objective and the substrate to be exposed.
25. Method according to Claim 24, in which an immersion fluid is used which has a refractive index greater than 1.4 at an operating wavelength of the projection objective.
26. Method according to Claim 25, in which the immersion fluid has a refractive index greater than 1.5 at the operating wavelength.
27. Microlithography projection exposure method for imaging a pattern provided on a mask positioned in an object plane of a projection objective onto a substrate provided in an image plane of the projection objective, in which an image-side last optical element of a projection objective being used is wrung or pressed onto the object to be exposed comprising the following steps in the given sequence: positioning the projection objective and the substrate to be exposed relative to one another; contacting the exit surface of the projection objective and an incoupling surface of the substrate; aligning the mask relative to the projection objective such that a desired pattern region of the mask is imaged onto a target area of the substrate in contact with the exit surface of the projection objective.
28. Method according to Claims 27, wherein the steps are repeated for a number of juxtaposed target areas on the substrate.
29. Method according to Claims 27 or 28, wherein a thin transparent membrane is placed between the substrate to be exposed and the exit surface of the projection objective.
30. Method according to one of Claims 24 to 29, in which a microlithography projection objective according to one of Claims 1 to 23 is used.
31. Microlithography projection exposure method for imaging a pattern provided on a mask positioned in an object plane of a projection objective onto a substrate provided in an image plane of the projection objective, in which a microlithography projection objective is used and an immersion fluid is introduced between a last lens of the microlithography projection objective and the substrate to be exposed, wherein Cyclohexane is used as immersion fluid.
Description  (Le texte OCR peut contenir des erreurs.)

Description

Projection objective having a high aperture and a planar end surface BACKGROUND OF THE INVENTION

Field of the invention

The present invention relates to a projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective. The projection objective may be used for microlithography projection exposure machines. The invention relates, in particular, to exposure machines for semiconductor structures which are designed for immersion operation, that is to say in an aperture range where the image side numerical aperture NA is greater than 1.0.

Description of the Related Art

In the case of reducing optical imaging, in particular of projection litho- graphy, the image side numerical aperture NA is limited by the refractive index of the surrounding medium in image space. In immersion lithography the theoretically possible numerical aperture NA is limited by the refractive index of the immersion medium. The immersion medium can be a liquid or a solid. Solid immersion is also spoken of in the latter case.

However, for practical reasons the aperture should not come arbitrarily close to the refractive index of the last medium (i.e. the medium closest to the image), since the propagation angles then become very large relative to the optical axis. It has proven to be practical for the aperture not substantially to exceed approximately 95% of the refractive index of the last medium of the image side. This corresponds to propagation angles of approximately 72° relative to the optical axis. For 193 nm, this corresponds to a numerical aperture of NA = 1.35 in the case of water (ΠH20 = 1.43) as immersion medium.

With liquids whose refractive index is higher than that of the material of the last lens, or in the case of solid immersion, the material of the last lens element (i.e. the last optical element of the projection objective adjacent to the image) acts as a limitation if the design of the last end surface (exit surface of the projection objective) is to be planar or only weakly curved. The planar design is advantageous, for example, for measuring the distance between wafer and objective, for hydrodynamic behaviour of the immersion medium between the wafer to be exposed and the last objective surface, and for their cleaning. The last end surface must be of planar design for solid immersion, in particular, in order to expose the wafer, which is likewise planar.

For DUV (operating wavelength of 248 nm or 193 nm), the materials normally used for the last lens are fused silica (synthetic quartz glass, Si02) with a refractive index of nSiθ2 = 1 -56 or CaF2 with a refractive index of ncaF2 = 1 -50. The synthetic quartz glass material will also be referred to simply as "quartz" in the following. Because of the high radiation load in the last lens elements, at 193 nm calcium fluoride is preferred for the last lens, in particular, since synthetic quartz glass would be damaged in the long term by the radiation load. This results in a numerical aperture of approximately 1.425 (95% of n = 1.5) which can be achieved. If the disadvantage of the radiation damage is accepted, quartz glass still allows numerical apertures of 1.48 (corresponding to approximately 95% of the refractive index of quartz at 193 nm). The relationships are similar at 248 nm. SUMMARY OF THE INVENTION

One object of the invention is to provide a high-aperture projection objective which circumvents the disadvantages of conventional designs with immersion media such as water or with lens materials such as fused silica and CaF2. It is another object of the invention to provide projection objectives suitable for immersion lithography at image side numerical apertures of at least NA = 1.35 having moderate size and material consumption.

As a solution to this and other objects, this invention, according to one formulation, provides a projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines comprising: a plurality of optical elements transparent for radiation at an operating wavelength of the" projection objective; wherein at least one optical element is a high-index optical element made from a high-index material with a refractive index n > 1.6 at the operating wavelength.

One embodiment consists in a radiation-proof lithography objective with image side numerical apertures which are preferably greater than or equal to NA = 1.35 and for which at least the last lens element consists of a high-index material (refractive index n > 1.6, in particular n > 1.8). In the case of the reduction ratio, customary in lithography, of (absolute) 4:1 ( l β l = 0.25), the object-side (mask-side) numerical aperture is then NA0bj > 0.33, preferably NA0bj ≥ 0.36.

Various aspects of the invention are explained below in more detail using exemplary embodiments for 193 nm. In the examples, a material used for the last lens element or a part thereof is sapphire (AI2O3), while the remaining lenses are made from fused silica. However, the examples can be transferred to other high-index lens materials and other wavelengths. For example, for 248 nm it is possible to use Germanium dioxide (Ge02) as material for the last lens or a part thereof. By contrast with sapphire, this material has the advantage that it is not birefringent. However, the material is no longer transparent at 193 nm. ln the case of liquid immersion, an NA > 1.35 may be reached if an immersion liquid with a higher refractive index than water is used. Cyclo- hexane (refractive index n=1.556) was used in some application exam- pies.

Immersion media with n>1.6 are currently regarded as realistic.

If an immersion liquid is used, the thickness of the high-index liquid, that is to say the immersion liquid, can preferably be between 0.1 and 10 mm. Smaller thicknesses within this range may be advantageous since the high-index immersion media generally also exhibit a higher absorption.

The previous and other properties can be seen not only in the claims but also in the description and the drawings, wherein individual characteristics may be used either alone or in sub-combinations as an embodiment of the invention and in other areas and may individually represent advantageous and patentable embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

Fig. 1 is a longitudinally sectioned view of a first embodiment of a catadioptric projection objective according to the invention;

Fig. 2 is a longitudinally sectioned view of a second embodiment of a catadioptric projection objective according to the invention;

Fig. 3 is a longitudinally sectioned view of a third embodiment of a catadioptric projection objective according to the invention;

Fig. 4 is a longitudinally sectioned view of a fourth embodiment of a catadioptric projection objective according to the invention; Fig. 5 is a longitudinally sectioned view of a fifth embodiment of a catadioptric projection objective according to the invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following description of preferred embodiments of the invention, the term "optical axis" shall refer to a straight line or sequence of straight-line segments passing through the centers of curvature of the optical elements involved. The optical axis can be folded by folding mirrors (deflecting mirrors). In the case of those examples presented here, the object involved is either a mask (reticle) bearing the pattern of an integrated circuit or some other pattern, for example, a grating pattern. In the examples presented here, the image of the object is projected onto a wafer serving as a substrate that is coated with a layer of photoresist, although other types of substrate, such as components of liquid-crystal displays or substrates for optical gratings, are also feasible.

Where tables are provided to disclose the specification of a design shown in a figure, the table or tables are designated by the same numbers as the respective figures.

Fig. 1 shows a first embodiment of a catadioptric projection objective 100 according to the invention designed for ca. 193 nm UV working wavelength. It is designed to project an image of a pattern on a reticle (or mask) arranged in the object plane OP into the image plane IP on a reduced scale, for example, 4:1 , while creating exactly two real intermediate images IMI1 and IMI2. A first refractive objective part ROP1 is designed for imaging the pattern in the object plane into the first intermediate image IMI1 , a second, catoptric (purely reflective) objective part COP2 images the first intermediate image IMI1 into the second intermediate image IMI2 at a magnification close to 1 :1 , and a third, refractive objective part ROP3 images the second intermediate image IMI2 onto the image plane IP with a strong reduction ratio. The second objective part COP2 comprises a first concave mirror CM1 having the concave mirror surface facing the object side, and a second concave mirror CM2 having the concave mirror surface facing the image side. The mirror surfaces are both continuous or unbroken, i.e. they do not have a hole or bore. The mirror surfaces facing each other define an intermirror space, enclosed by the curved surfaces defined by the concave mirrors. The intermediate images IMI1 , IMI2 are both situated geometrically inside the intermirror space, at least the paraxial interme- diate images being almost in the middle thereof well apart from the mirror surfaces.

Each mirror surface of a concave mirror defines a "curvature surface" or "surface of curvature" which is a mathematical surface extending beyond the edges of the physical mirror surface and containing the mirror surface. The first and second concave mirrors are parts of rotationally symmetric curvature surfaces having a common axis of rotational symmetry.

The system 100 is rotational symmetric and has one straight optical axis AX common to all refractive and reflective optical components. There are no folding mirrors. The concave mirrors have small diameters allowing to bring them close together and rather close to the intermediate images lying in between. The concave mirrors are both constructed and illuminated as off-axis sections of axial symmetric surfaces. The light beam passes by the edges of the concave mirrors facing the optical axis without vignetting.

Catadioptric projection objectives having this general construction are disclosed e.g. in the US provisional applications with serial numbers 60/536,248 filed on January 14, 2004, 60/587,504 filed on July 14, 2004 and a subsequent extended application filed on October 13, 2004. The contents of these applications is incorporated into this application by reference. It is one characterizing feature of this type of catadioptric projection objectives that pupil surfaces (at axial positions where the chief ray intersects the optical axis) are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane and that all concave mirrors are arranged optically remote from a pupil surface, particularly at positions where the chief ray height of the imaging process exceeds a marginal ray height of the imaging process. Further, it is preferred that at least the first intermediate image is located geometrically within the intermirror space between the first concave mirror and the second concave mirror. Preferably, both the first intermediate image and the second intermediate image are located geometrically within the intermirror space between the concave mirrors.

The exemplary examples described below share these basic characteristics which allow immersion lithography at numerical apertures NA > 1 with optical systems that can be built with relatively small amounts of optical material.

Fig. 1 shows as first exemplary embodiment a lithography objective for 193 nm with a sapphire lens and cyclohexane as immersion medium in conjunction with an image-side numerical aperture of NA = 1.45. The sapphire lens is the last optical element LOE closest to the image plane. The image-side working distance is 1 mm. The catadioptric design has two concave mirrors, chiefly for chromatic correction and Petzval correction, and an intermediate image respectively upstream and downstream of the pair of mirrors. The intermediate images are, however, not fully corrected and serve primarily for the geometrical limitation of the design and for separating two beam paths running toward a mirror and runing from a mirror after reflection therupon. The image field (on the wafer) is rectangular. The external field radius (on the wafer side) is 15.5 mm, the inner one 4.65 mm. The result of this is a rectangular field of 26 x 3.8 mm. The aperture diaphragm (aperture stop AS, system aperture) is arranged in the first refractive objective part ROP1 in the first exemplary embodiment. This is advantageous in order, on the one hand, to fashion a smaller variable aperture diaphragm, and on the other hand largely to protect the subsequent objective parts (seen from the object plane (mask plane)) against useless and interfering radiation loads when stopping down the aperture diaphragm. The rear diaphragm plane in the image-side objective part ROP3, i.e. a position where an aperture stop could be placed, is positioned in a region between the lens of maximum diameter LMD and the image plane IP in the convergent beam path.

Formed in the object-side front refractive partial objective ROP1 is a waist (constriction of the beam and lens diameters) which serves primarily for correcting the image field curvature (Petzval sum). The aperture stop AS is arranged at the waist.

The use of CaF2 for the last lens is not to be preferred, since this requires a numerical aperture that is as far as possible not greater than 1.425 (-95% of the refractive index of CaF2). At 193 nm, sapphire (Al203) is used in this example as high-index material in the last lens element LOE. In all embodiments shown in the figures optical elements made of sapphire are shaded gray for easier reference.

The birefringence occurring when sapphire is used is largely compensated by splitting the last lens (last optical element LOE) into two lens elements LOE1 and LOE2 and rotating the two lens elements relative to one another around the optical axis. In this case, the separation interface SI (contact surface of the two lens elements LOE1 and LOE1 ) is preferably curved such that both lens elements have similar refractive power. Alternatively, it is possible to use for the compensation a second element made from sapphire which is located at a site in the objective which acts similarly in optical terms, for example in the vicinity of the intermediate images or in the vicinity of the object plane. In the present case, the last sapphire lens LOE is split into two lens elements LOE1 and LOE2 which act virtually identically. The front radius of the sapphire lens LOE (i.e. the radius of the light entry side) is designed such that an aperture beam, i.e. a beam running towards the image at the parimeter of the convergent light bundle, toward the center of the image field passes through the interface virtually without being refracted, that is to say strikes the interface virtually perpendicularly (lens radius is virtually concentric with the point of intersection of the image plane with the optical axis). The radius of the splitting interface SI between the two lens elements of the split sapphire lens is flatter (radius > 1.3 times the distance from the image plane where a wafer can be placed).

Compensation of birefringence effects by relative rotation of elements made of birefringent material is described in detail e.g. in patent applications DE 101 23 725 A1 (corresponding e.g. to US 2004/0190151 A1 ) or WO 03/077007 A2 by the applicant. Catadioptric projection objectives having a final lens element closest to the image plane designed as a split final lens made from a birefringent material (calcium fluoride) are known from US 6,717,722 B.

The specifications for the design of Fig. 1 are summarized in Table 1. The leftmost column lists the number of the refractive, reflective, or otherwise designated surface, the second column lists the radius, r, of that surface [mm], the third column lists the distance, d [mm], between that surface and the next surface, a parameter that is referred to as the "thickness" of the optical element, the fourth column lists the material employed for fabricating that optical element, and the fifth column lists the refractive index of the material employed for its fabrication. The sixth column lists the optically utilizable, clear, semi diameter [mm] of the optical component. In the tables, a radius value r=0 is given for planar surfaces having infinite radius. ln the case of this particular embodiment, fifteen surfaces are aspherical surfaces. Table 1A lists the associated data for those aspherical surfaces, from which the sagitta of their surface figures as a function of the height h may be computed employing the following equation:

p(h) = [((1/r)h2)/(1 + SQRT(1 - (1 + K)(1/r)2h2)] + C1 h4 + C2 h6 + .... ,

where the reciprocal value (1/r) of the radius is the curvature of the surface in question at the surface vertex and h is the distance of a point thereon from the optical axis. The sagitta p(h) thus represents the distance of that point from the vertex of the surface in question, measured along the z-direction, i.e., along the optical axis. The constants K, C1 , C2, etc., are listed in Table 1A.

Likewise, the specifications of the following embodiments are represented in similar manner in tables 2, 2A for Fig. 2, tables 3, 3A for Fig. 3, tables 4, 4A for Fig. 4 and tables 5, 5A for Fig. 5.

In accordance with the projection objective 200 according to Fig. 2 the last optical element LOE on the image side has the overall shape of a plano-convex lens. The lens is subdivided into two optical elements LOE1 and LOE2 which are contacted along a plane splitting interface SI. Specifically, a quartz glass lens LOE1 with a positive radius of curvature of the entry surface and a rear planar surface is wrung onto one (or two) plane-parallel plates LOE2 made from sapphire. This yields values of NA no higher than possible in quartz glass, but there is the advantage that the angle of propagation of the light beams is reduced in the last objective part where the aperture is greatest owing to the high-index medium. This is advantageous when considering the reflection losses and scattered light effects at the interface and at possible protective layers on the last end surface, which constitute a problem for these otherwise very large angles of propagation. The largest angles then occur only at the wrung surface between the quartz lens LOE1 and the first high-index plane-parallel plate LOE2. This wrung surface (contact interface where the adjacent optical elements are adhered to each other by wringing) is protected against contamination and damage, and can be designed with a coating which is sensitive to environmental influences as well. If two plane-parallel plates are used to form the plane-parallel high-index element LOE2, then the two plane-parallel plates made from sapphire can be rotated relative to one another around the optical axis virtually ideally to compensate the birefringence effect for the S- and P-polarisations in the x- and y-directions which are chiefly required for imaging the semiconductor structures.

However, because of its lower refractive index, the quartz lens LOE1 has the effect here that - because of its lesser collecting effect - very large lens diameters are required even for image-side numerical apertures of a projection objective of limited overall length which are not really so large. In the second exemplary embodiment (Fig. 2), the aperture is NA = 1.35, but the lens diameters are greater than in the first exemplary embodiment. Here, the lens diameter is already over 143 mm and thus virtually 212 times the numerical aperture, while in the exemplary embodiment in Fig. 1 only 200 times the numerical aperture is reached. In particular, in the exemplary embodiment in Fig. 2 at 143 mm the maximum half lens diameter is even greater than the mirror semi- diameter at approximately 136 mm.

In order to minimize the diameter of the largest lens elements of the projection objective, and at the same time to minimize the effect of the birefringence, in an alternative embodiment (projection objective 300) of the design example with NA = 1.45 the last lens element LOE comprises a thin sapphire lens LOE1 with positive refractive power, a spherically curved entry surface and a planar exit surface, which is wrung onto a thin quartz glass plate LOE2 (exemplary embodiment 3 in Fig. 3). The plane-parallel quartz glass plate providing the exit surface of the objective can then be interchanged upon the occurrence of damage owing to the radiation load. A wrung quartz plate therefore also acts as interchangeable protection of the sapphire lens LOE1 against contamination and/or scratches or destruction. Embodiment 3 is adapted to Cyclohexane as an immersion fluid, which has a refractive index (n = 1 .556) similar to that of fused silica (n = 1.560) used for the plate in contact with the immersion fluid.

In these cases, the NA is limited by the refractive index of the quartz glass. However, by comparison with a design having a last lens made from pure quartz glass the result upstream of the last lens is smaller beam angles and therefore also smaller diameters of the overall objective and lower sensitivities (interference susceptibilities to manufacturing tolerances) of the last lens element. In embodiment 3, at 135 mm the maximum lens diameter is now approximately 186 times the numerical aperture.

Of course, the present invention can also be used for objectives of low numerical aperture, in order to reduce substantially the diameter of previous projection objectives. This advantageously affects the price of the projection objective, since the amount of material can be reduced substantially.

The exemplary fourth embodiment (Fig. 4) shows a lithography objective 400 for 193 nm with a monolithic last lens made of sapphire and water (ΠH2O = 1 -43) as immersion medium for NA = 1.35 with a working distance of 1 mm. The top side (entrance side) of the monolithic (one part, not split) sapphire lens LOE is aspheric, and the aperture stop AS is situated in the rear part of the image side refractive objective part ROP3 in the region of convergent radiation between the region of largest beam diameter in the third objective part ROP3 at biconvex lens LMD with largest diameter and the image plane IP. The maximum lens diameter is limited to less than 190 times the numerical aperture. Even higher numerical apertures than NA = 1.45 are possible with the aid of high-index materials for at least the last lens element.

The fifth exemplary embodiment 500 (Fig. 5) is designed for solid immersion (contact projection lithography) with a plano-convex sapphire lens LOE (nsapphire = 1 -92) for an NA = 1.6. Consequently, even numerical apertures of up to NA > 1.8 are feasible in principle. In the example, the outer field radius on the wafer side is at 15.53 mm, and the inner one is at 5.5 mm, that is to say the size of the rectangular field here is 26 x 3 mm.

Since the high-aperture beams with apertures of NA > 0.52 experience total reflection upon transition from sapphire to air at the plane exit surface, working distances of less than the wavelength must be realized for solid immersion in order to efficiently use evanescent waves for the exposure of the wafer. This can be performed in vacuo by bringing the wafer to be exposed constantly to, for example, 100 nm (« λ/2) in the vicinity of the last lens surface.

However, since on the basis of the power transmission, which drops exponentially with distance, through evanescent fields small changes in distance result in strong fluctuations in uniformity, it is advantageous to bring the wafer into direct mechanical contact with the last end surface (exit surface) of the projection objective. To be exposed, the wafer can be wrung onto the last planar lens surface (contact surface CS) for this purpose in order to obtain a mechanical contact between the exit surface of the projection objective and the incoupling surface associated to the substrate. A step-and-scan mode or stitching methods of exposure is to be preferred in this case, that is to say larger regions than the image field are exposed in individual steps, the reticle mask being correspondingly adjusted for alignment instead of, as previously customary, the wafer. This is also advantageous because owing to the reducing imaging the reticle can be adjusted with less accuracy than an adjustment of the wafer. Mutually adjoining exposure regions (target areas) or sequential levels of the semiconductor structure from subsequent exposure steps are thereby brought into overlay by lateral and axial movement and rotation of the reticle mask in order thereby to expose the semiconductor structures onto the possibly also defectively wrung wafers with an overlay accuracy of better than a few nm. Alignment marks, for example, of the reticle are brought into agreement for this purpose with alignment marks already exposed on the wafer.

The release of the wafer from the last surface is preferably performed in vacuo. If required, there is located between the wafer and last planar lens surface a thin layer (pellicle/membrane) which can be exchanged after each exposure step, for example. This membrane can, for exam- pie, also remain bonded on the wafer and assist in the separation and serves, in particular, as protection for the last planar lens surface. The latter can optionally be protected in addition by a thin protective layer.

In the case of solid immersion, standing waves of high intensity can be produced during the exposure in the edge region of the last lens surface owing to the instances of imaging interference. It is therefore even advantageous for the repeated exposure of a structure onto a wafer when the wafer is inaccurately positioned by chance in certain ranges of a few micrometers owing to the wringing, something which is compen- sated by adjustment using the reticle in order to prevent systematic structures from being burnt into the last lens.

All exemplary embodiments discussed above are catadioptric projection objectives with exactly two concave mirrors and exactly two intermediate images, where all optical elements are aligned along one straight, unfolded optical axis. The uniform basic type of projection objective chosen to explain preferred variants of the invention is intended to help illustrate some basic variants and technical effects and advantages related to different variants of the invention. However, the demonstrated use of lenses or lens elements made of high refractive index material (e.g. n ≥ 1.6 or even n > 1.8) in projection objectives particularly for operating wavelength in the deep ultraviolet range (DUV) is not restricted to this type of projection objectives. The invention can also be incorporated into purely refractive projection objectives. In those types, the last optical element closest to the image plane is often a plano-convex lens which can be designed, for example, according to the rules laid out above for the last optical elements LOE in each of the first to fifth embodiment. Examples are given e.g. in applicants US applications having serial numbers 10/931 ,051 (see also WO 03/075049 A), 10/931 ,062 (see also US 2004/0004757 A1 ), 10/379,809 (see US 2003/01744408) or in WO 03/077036 A. The disclosure of these documents is incorporated herein by reference.

Likewise, the invention can be implemented into catadioptric projection objectives having only one concave mirror, or catadioptric projection objectives having two concave mirrors in a arrangement different from that shown in the figures, or in embodiments having more than two concave mirrors. Also, use of the invention can be made independent of whether or not folding mirrors are present in the optical design. Examples of catadioptric systems are given e.g. in applicants US applications having serial numbers 60/511 ,673, 10/743,623, 60/530,622, 60/560,267 or in US 2002/0012100 A1. The disclosure of these documents is incorporated herein by reference. Other examples are shown in US 2003/0011755 A1 and related applications.

Likewise, the invention can be implemented into projection objectives without intermediate image, or with any suitable number of intermediate images depending on demand. Table 1

Table 1A ASPHERIC CONSTANTS

Table 2

Table 2A ASPHERIC CONSTANTS

Table 3

Table 3A ASPHERIC CONSTANTS

Table 4

Table 4A ASPHERIC CONSTANTS

Table 5

Table 5A ASPHERIC CONSTANTS

Citations de brevets
Brevet cité Date de dépôt Date de publication Déposant Titre
WO2002091078A1 *7 mai 200214 nov. 2002Massachusetts Institute Of TechnologyMethods and apparatus employing an index matching medium
WO2005001432A2 *24 mars 20046 janv. 2005Massachusetts Institute Of TechnologyOptical fluids, and systems and methods of making and using the same
DE19633128A1 *16 août 199619 févr. 1998Zeiss Carl FaAchromatisches Linsensystem für Ultraviolettstrahlen mit Germaniumdioxid-Glas
EP1480065A2 *21 mai 200424 nov. 2004Canon Kabushiki KaishaProjection optical system, exposure apparatus, and device manufacturing method
US5121256 *14 mars 19919 juin 1992The Board Of Trustees Of The Leland Stanford Junior UniversityLithography system employing a solid immersion lens
US6597498 *7 juil. 200022 juil. 2003Carl-Zeiss-StiftungOptical system for the vacuum ultraviolet
US20020102497 *25 mai 20001 août 2002Sparrow Robert W.Fluoride lens crystal for optical microlithography systems
Référencé par
Brevet citant Date de dépôt Date de publication Déposant Titre
WO2005119371A1 *1 juin 200515 déc. 2005E.I. Dupont De Nemours And CompanyUltraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications
WO2007017473A14 août 200615 févr. 2007Carl Zeiss Smt AgImaging system, in particular projection lens of a microlithographic projection exposure unit
WO2007034838A120 sept. 200629 mars 2007Nikon CorporationExposure device, exposure method, and device fabrication method
WO2007040254A14 oct. 200612 avr. 2007Nikon CorporationExposure apparatus and exposure method
WO2007052659A131 oct. 200610 mai 2007Nikon CorporationExposure apparatus, exposure method and device manufacturing method
WO2007055199A17 nov. 200618 mai 2007Nikon CorporationExposure apparatus and method, and method for manufacturing device
WO2007055237A18 nov. 200618 mai 2007Nikon CorporationExposure apparatus, exposure method and device manufacturing method
WO2007058354A121 nov. 200624 mai 2007Nikon CorporationExposure method and device manufacturing method using the same, exposure apparatus, and substrate treatment method and apparatus
WO2007066758A18 déc. 200614 juin 2007Nikon CorporationSubstrate holding device, exposure device, exposure method, and device fabrication method
WO2007071565A1 *7 déc. 200628 juin 2007Carl Zeiss Smt AgProjection objective of a microlithographic projection exposure apparatus
WO2007076094A2 *22 déc. 20065 juil. 2007Corning IncorporatedSubmersive doublet for high numerical aperture optical system
WO2007076094A3 *22 déc. 200622 mai 2008Corning IncSubmersive doublet for high numerical aperture optical system
WO2007077875A127 déc. 200612 juil. 2007Nikon CorporationExposure apparatus, exposure method, and device production method
WO2007094407A115 févr. 200723 août 2007Nikon CorporationExposure apparatus, exposing method, and device manufacturing method
WO2007094431A115 févr. 200723 août 2007Nikon CorporationExposure apparatus, exposing method, and device manufacturing method
WO2007094470A116 févr. 200723 août 2007Nikon CorporationExposure apparatus, exposure method and method for manufacturing device
WO2007097380A121 févr. 200730 août 2007Nikon CorporationPattern forming apparatus, pattern forming method, mobile object driving system, mobile body driving method, exposure apparatus, exposure method and device manufacturing method
WO2007100087A12 mars 20077 sept. 2007Nikon CorporationExposure apparatus and device manufacturing method
WO2007108414A116 mars 200727 sept. 2007Nikon CorporationExposure apparatus and device production method
WO2007108415A116 mars 200727 sept. 2007Nikon CorporationExposure apparatus and device manufacturing method
WO2007119501A123 mars 200725 oct. 2007Nikon CorporationExposure apparatus, exposure method and device manufacturing method
WO2007129753A110 mai 200715 nov. 2007Nikon CorporationExposure apparatus and device manufacturing method
WO2007136052A122 mai 200729 nov. 2007Nikon CorporationExposure method and apparatus, maintenance method, and device manufacturing method
WO2007136089A123 mai 200729 nov. 2007Nikon CorporationMaintenance method, exposure method and apparatus, and device manufacturing method
WO2007138834A111 mai 20076 déc. 2007Nikon CorporationExposure apparatus and exposure method
WO2009013903A124 juil. 200829 janv. 2009Nikon CorporationMobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus and device manufacturing method
EP2108990A112 oct. 200514 oct. 2009Nikon CorporationProjection optical system, exposure system, and exposure method
EP2653924A223 janv. 200823 oct. 2013Nikon CorporationLiquid recovery system, immersion exposure apparatus, immersion exposure method, and device fabricating method
EP2768016A18 déc. 200620 août 2014Nikon CorporationExposure apparatus and method
EP2813893A121 févr. 200717 déc. 2014Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
EP3115844A121 févr. 200711 janv. 2017Nikon CorporationExposure apparatus, exposure method and device manufacturing method
US736251425 juil. 200622 avr. 2008Carl Zeiss Smt AgImaging system, in particular a projection objective of a microlithographic projection exposure apparatus
US738576414 déc. 200410 juin 2008Carl Zeiss Smt AgObjectives as a microlithography projection objective with at least one liquid lens
US74281055 juin 200723 sept. 2008Carl Zeiss Smt AgObjectives as a microlithography projection objective with at least one liquid lens
US74330504 oct. 20067 oct. 2008Nikon CorporationExposure apparatus and exposure method
US744695112 mars 20084 nov. 2008Carl Zeiss Smt AgImaging system, in particular a projection objective of a microlithographic projection exposure apparatus
US747446922 sept. 20056 janv. 2009Carl Zeiss Smt AgArrangement of optical elements in a microlithographic projection exposure apparatus
US755799628 avr. 20067 juil. 2009Carl Zeiss Smt AgProjection objective
US75579979 août 20077 juil. 2009Nikon CorporationImmersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element
US758924214 sept. 200515 sept. 2009E. I. Du Pont De Nemours And CompanyUse of highly purified hydrocarbons in vacuum ultraviolet applications
US76797213 avr. 200616 mars 2010Carl Zeiss Smt AgProjection objective of a microlithographic projection exposure apparatus and method for its production
US76840084 juin 200423 mars 2010Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US768842212 oct. 200530 mars 2010Nikon CorporationProjection optical system, exposure system, and exposure method
US770155019 août 200420 avr. 2010Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US771064013 juin 20084 mai 2010Carl Zeiss Smt AgProjection objective of a microlithographic projection exposure apparatus
US771498216 févr. 200711 mai 2010Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US771965813 janv. 200518 mai 2010Carl Zeiss Smt AgImaging system for a microlithographical projection light system
US776442721 déc. 200627 juil. 2010Carl Zeiss Smt AgMicrolithography optical system
US777978128 juil. 200424 août 2010Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US778244017 nov. 200524 août 2010Carl Zeiss Smt AgProjection lens system of a microlithographic projection exposure installation
US77824425 déc. 200624 août 2010Nikon CorporationExposure apparatus, exposure method, projection optical system and device producing method
US780351620 nov. 200628 sept. 2010Nikon CorporationExposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US781292526 janv. 200612 oct. 2010Nikon CorporationExposure apparatus, and device manufacturing method
US78306119 janv. 20089 nov. 2010Carl Zeiss Smt AgProjection objective of a microlithographic projection exposure apparatus
US78435501 déc. 200630 nov. 2010Nikon CorporationProjection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US785577719 juil. 200721 déc. 2010Nikon CorporationExposure apparatus and method for manufacturing device
US786899720 janv. 200611 janv. 2011Nikon CorporationProjection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US786899830 juin 200811 janv. 2011Asml Netherlands B.V.Lithographic apparatus
US78727306 sept. 200718 janv. 2011Nikon CorporationImmersion exposure apparatus and immersion exposure method, and device manufacturing method
US787541819 juin 200825 janv. 2011Carl Zeiss Smt AgMethod for a multiple exposure, microlithography projection exposure installation and a projection system
US788086020 déc. 20041 févr. 2011Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US78986456 avr. 20061 mars 2011Zao Nikon Co., Ltd.Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US790725316 juil. 200715 mars 2011Nikon CorporationExposure apparatus, exposure method, and method for producing device
US790725419 juil. 200715 mars 2011Nikon CorporationExposure apparatus, exposure method, and method for producing device
US790725524 août 200415 mars 2011Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US791158318 juil. 200722 mars 2011Nikon CorporationExposure apparatus, exposure method, and method for producing device
US79162702 mars 200729 mars 2011Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US79162723 août 200629 mars 2011Nikon CorporationExposure apparatus and device fabrication method
US792440215 mars 200612 avr. 2011Nikon CorporationExposure apparatus and device manufacturing method
US79274287 sept. 200719 avr. 2011Nikon CorporationCleaning member, cleaning method, and device manufacturing method
US792911027 juin 200719 avr. 2011Nikon CorporationEnvironmental system including a transport region for an immersion lithography apparatus
US792911127 juin 200719 avr. 2011Nikon CorporationEnvironmental system including a transport region for an immersion lithography apparatus
US793298913 juin 200726 avr. 2011Nikon CorporationLiquid jet and recovery system for immersion lithography
US79329913 mars 200626 avr. 2011Nikon CorporationExposure apparatus, exposure method, and method for producing device
US79364447 févr. 20083 mai 2011Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US796537628 juin 200721 juin 2011Nikon CorporationEnvironmental system including a transport region for an immersion lithography apparatus
US796955228 juin 200728 juin 2011Nikon CorporationEnvironmental system including a transport region for an immersion lithography apparatus
US798285015 mai 200819 juil. 2011Asml Netherlands B.V.Immersion lithographic apparatus and device manufacturing method with gas supply
US798285715 déc. 200419 juil. 2011Nikon CorporationStage apparatus, exposure apparatus, and exposure method with recovery device having lyophilic portion
US799051628 janv. 20052 août 2011Nikon CorporationImmersion exposure apparatus and device manufacturing method with liquid detection apparatus
US799051710 janv. 20072 août 2011Nikon CorporationImmersion exposure apparatus and device manufacturing method with residual liquid detector
US79906221 oct. 20102 août 2011Carl Zeiss Smt GmbhProjection objective of a microlithographic projection exposure apparatus
US799518611 janv. 20079 août 2011Zao Nikon Co., Ltd.Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US800465122 janv. 200823 août 2011Nikon CorporationLiquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US80185708 juin 200713 sept. 2011Nikon CorporationExposure apparatus and device fabrication method
US801857527 janv. 200613 sept. 2011Nikon CorporationExposure apparatus, and device manufacturing method
US801865719 juin 200913 sept. 2011Nikon CorporationOptical arrangement of autofocus elements for use with immersion lithography
US802310621 août 200820 sept. 2011Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US802702016 févr. 200727 sept. 2011Nikon CorporationExposure apparatus, exposure method, and method for producing device
US802702121 févr. 200727 sept. 2011Nikon CorporationMeasuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US802702719 avr. 200727 sept. 2011Nikon CorporationExposure apparatus, and device manufacturing method
US80313251 mars 20104 oct. 2011Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US803579526 nov. 200711 oct. 2011Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine
US80357987 juil. 200611 oct. 2011Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US803580012 mars 200711 oct. 2011Nikon CorporationExposure apparatus, maintenance method, exposure method, and method for producing device
US803980731 août 200718 oct. 2011Nikon CorporationExposure apparatus, exposure method, and method for producing device
US804049110 janv. 200818 oct. 2011Nikon CorporationExposure method, substrate stage, exposure apparatus, and device manufacturing method
US804513620 avr. 200725 oct. 2011Nikon CorporationStage drive method and stage unit, exposure apparatus, and device manufacturing method
US804513714 mai 200825 oct. 2011Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US80544473 déc. 20048 nov. 2011Nikon CorporationExposure apparatus, exposure method, method for producing device, and optical part
US805444827 avr. 20058 nov. 2011Nikon CorporationApparatus and method for providing fluid for immersion lithography
US805447221 févr. 20078 nov. 2011Nikon CorporationPattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US805925818 sept. 200815 nov. 2011Nikon CorporationLiquid jet and recovery system for immersion lithography
US806406729 août 200822 nov. 2011Nikon CorporationExposure apparatus and exposure method
US80725767 juin 20076 déc. 2011Nikon CorporationExposure apparatus and method for producing device
US80853819 févr. 200727 déc. 2011Nikon CorporationCleanup method for optics in immersion lithography using sonic device
US80896102 févr. 20073 janv. 2012Nikon CorporationEnvironmental system including vacuum scavenge for an immersion lithography apparatus
US80896155 juin 20083 janv. 2012Nikon CorporationSubstrate holding apparatus, exposure apparatus, exposing method, and device fabricating method
US809437924 août 200910 janv. 2012Nikon CorporationOptical arrangement of autofocus elements for use with immersion lithography
US810250125 juil. 200724 janv. 2012Nikon CorporationImmersion lithography fluid control system using an electric or magnetic field generator
US810250411 août 200624 janv. 2012Nikon CorporationExposure apparatus, exposure method, and method for producing device
US810705510 août 200731 janv. 2012Zao Nikon Co., Ltd.Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US811137323 mars 20057 févr. 2012Nikon CorporationExposure apparatus and device fabrication method
US811137517 nov. 20067 févr. 2012Nikon CorporationExposure apparatus and method for manufacturing device
US811589923 janv. 200714 févr. 2012Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US812075116 sept. 200921 févr. 2012Nikon CorporationCoupling apparatus, exposure apparatus, and device fabricating method
US812076323 juin 200921 févr. 2012Carl Zeiss Smt GmbhDevice and method for the optical measurement of an optical system by using an immersion fluid
US812561222 nov. 200628 févr. 2012Nikon CorporationExposure apparatus and method for producing device
US812561319 avr. 200728 févr. 2012Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US81303617 avr. 20066 mars 2012Nikon CorporationExposure apparatus, exposure method, and method for producing device
US81346829 févr. 200713 mars 2012Nikon CorporationExposure apparatus and method for producing device
US813468517 mars 200813 mars 2012Nikon CorporationLiquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US813919814 avr. 200620 mars 2012Nikon CorporationExposure apparatus, exposure method, and method for producing device
US81547087 juil. 200610 avr. 2012Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US81695908 déc. 20061 mai 2012Nikon CorporationExposure apparatus and device fabrication method
US816959216 mai 20081 mai 2012Nikon CorporationExposure apparatus and method for producing device
US817466822 juin 20078 mai 2012Nikon CorporationExposure apparatus and method for producing device
US818916828 mai 200829 mai 2012Nikon CorporationExposure apparatus, device production method, cleaning apparatus, cleaning method, and exposure method
US819423218 juil. 20085 juin 2012Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US820811710 sept. 200826 juin 2012Nikon CorporationExposure method, substrate stage, exposure apparatus, and device manufacturing method
US82081209 avr. 200826 juin 2012Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US821812519 déc. 200810 juil. 2012Asml Netherlands B.V.Immersion lithographic apparatus with a projection system having an isolated or movable part
US82181274 févr. 200910 juil. 2012Nikon CorporationExposure apparatus and device manufacturing method
US821812921 août 200810 juil. 2012Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
US82284845 févr. 200824 juil. 2012Nikon CorporationCoupling apparatus, exposure apparatus, and device fabricating method
US823313321 déc. 200531 juil. 2012Nikon CorporationExposure method, exposure apparatus, and method for producing device
US823791129 oct. 20077 août 2012Nikon CorporationApparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US823791921 août 20087 août 2012Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US82432533 juin 200814 août 2012Nikon CorporationLyophobic run-off path to collect liquid for an immersion lithography apparatus
US826466924 juil. 200811 sept. 2012Nikon CorporationMovable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head
US82699446 août 200718 sept. 2012Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US826994613 févr. 200918 sept. 2012Nikon CorporationCleanup method for optics in immersion lithography supplying cleaning liquid at different times than immersion liquid
US827939920 oct. 20082 oct. 2012Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US828950027 mars 200916 oct. 2012Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US83002079 mai 200830 oct. 2012Nikon CorporationExposure apparatus, immersion system, exposing method, and device fabricating method
US830555228 mars 20066 nov. 2012Nikon CorporationExposure apparatus, exposure method, and method for producing device
US830555317 août 20056 nov. 2012Nikon CorporationExposure apparatus and device manufacturing method
US831993930 oct. 200827 nov. 2012Asml Netherlands B.V.Immersion lithographic apparatus and device manufacturing method detecting residual liquid
US831994124 mars 200927 nov. 2012Nikon CorporationExposure apparatus, and device manufacturing method
US831994428 juin 201027 nov. 2012Carl Zeiss Smt GmbhProjection lens system of a microlithographic projection exposure installation
US83309359 févr. 201011 déc. 2012Carl Zeiss Smt GmbhExposure apparatus and measuring device for a projection lens
US83452166 avr. 20061 janv. 2013Nikon CorporationSubstrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US83452178 mai 20081 janv. 2013Nikon CorporationLiquid recovery member, exposure apparatus, exposing method, and device fabricating method
US835101919 avr. 20108 janv. 2013Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US83632067 nov. 200829 janv. 2013Carl Zeiss Smt GmbhOptical imaging device with thermal attenuation
US83632084 févr. 201029 janv. 2013Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US83848777 juin 200726 févr. 2013Nikon CorporationExposure apparatus and method for producing device
US838488010 sept. 200826 févr. 2013Nikon CorporationExposure method, substrate stage, exposure apparatus, and device manufacturing method
US839077916 févr. 20075 mars 2013Nikon CorporationExposure apparatus, exposure method, and method for producing device
US840061025 juin 201219 mars 2013Nikon CorporationApparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US841124811 mars 20092 avr. 2013Nikon CorporationExposure apparatus and device fabrication method
US842199214 août 200816 avr. 2013Nikon CorporationExposure method, exposure apparatus, and method for producing device
US84220154 nov. 200816 avr. 2013Nikon CorporationMovable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US843697816 août 20077 mai 2013Nikon CorporationExposure apparatus, and device manufacturing method
US84369795 oct. 20107 mai 2013Nikon CorporationExposure apparatus, and device manufacturing method
US844656314 août 200921 mai 2013Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US845142425 janv. 200628 mai 2013Nikon CorporationExposure apparatus, method for producing device, and method for controlling exposure apparatus
US845661020 mars 20094 juin 2013Nikon CorporationEnvironmental system including vacuum scavenge for an immersion lithography apparatus
US847200131 juil. 200825 juin 2013Nikon CorporationExposure method, exposure apparatus, and method for producing device
US84720022 févr. 201025 juin 2013Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US847728310 mai 20072 juil. 2013Nikon CorporationExposure apparatus and device manufacturing method
US84828452 févr. 20109 juil. 2013Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US84881008 oct. 201016 juil. 2013Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US848810130 juin 201116 juil. 2013Nikon CorporationImmersion exposure apparatus and method that detects residual liquid on substrate held by substrate table on way from exposure position to unload position
US848810831 juil. 200816 juil. 2013Nikon CorporationExposure method, exposure apparatus, and method for producing device
US84935459 mars 200923 juil. 2013Nikon CorporationCleanup method for optics in immersion lithography supplying cleaning liquid onto a surface of object below optical element, liquid supply port and liquid recovery port
US849797325 juil. 200730 juil. 2013Nikon CorporationImmersion lithography fluid control system regulating gas velocity based on contact angle
US850871822 déc. 200813 août 2013Nikon CorporationWafer table having sensor for immersion lithography
US851436621 oct. 200820 août 2013Nikon CorporationExposure method and apparatus, maintenance method and device manufacturing method
US851436710 juil. 200720 août 2013Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US85201847 juin 200527 août 2013Nikon CorporationImmersion exposure apparatus and device manufacturing method with measuring device
US85201875 août 200927 août 2013Nikon CorporationApparatus and method for providing fluid for immersion lithography
US852597122 juin 20073 sept. 2013Nikon CorporationLithographic apparatus with cleaning of substrate table
US853733129 juil. 200817 sept. 2013Nikon CorporationExposure apparatus and method for manufacturing device
US85423434 août 201024 sept. 2013Asml Netherlands B.V.Lithographic apparatus
US854234431 oct. 201124 sept. 2013Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US854751926 mars 20091 oct. 2013Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US854752718 juil. 20081 oct. 2013Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
US85475285 août 20091 oct. 2013Nikon CorporationStage drive method and stage unit, exposure apparatus, and device manufacturing method
US85532035 août 20098 oct. 2013Nikon CorporationStage drive method and stage unit, exposure apparatus, and device manufacturing method
US85589873 janv. 200715 oct. 2013Nikon CorporationExposure apparatus and device fabrication method
US85589894 août 201015 oct. 2013Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US857637626 avr. 20105 nov. 2013Carl Zeiss Smt GmbhImaging optical system and projection exposure system for microlithography
US858208430 avr. 201212 nov. 2013Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US85994887 déc. 20113 déc. 2013Nikon CorporationOptical arrangement of autofocus elements for use with immersion lithography
US860525526 avr. 201010 déc. 2013Carl Zeiss Smt GmbhImaging optical system and projection exposure system including the same
US86093016 mars 200917 déc. 2013Nikon CorporationMask, exposure apparatus and device manufacturing method
US861087518 juil. 201317 déc. 2013Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US86294182 nov. 200614 janv. 2014Asml Netherlands B.V.Lithographic apparatus and sensor therefor
US863405620 juil. 201121 janv. 2014Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US863405718 juil. 201321 janv. 2014Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US863406016 mars 201021 janv. 2014Carl Zeiss Smt GmbhMethod for a multiple exposure, microlithography projection exposure installation and a projection system
US863841525 sept. 200928 janv. 2014Asml Netherlands B.V.Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US863841822 déc. 201028 janv. 2014Asml Netherlands B.V.Lithographic apparatus
US86384197 janv. 201128 janv. 2014Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US86654555 nov. 20084 mars 2014Nikon CorporationMovable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US867010319 déc. 200711 mars 2014Nikon CorporationCleanup method for optics in immersion lithography using bubbles
US867010410 mars 200911 mars 2014Nikon CorporationCleanup method for optics in immersion lithography with cleaning liquid opposed by a surface of object
US869297327 avr. 20078 avr. 2014Nikon CorporationExposure apparatus and method for producing device
US869297629 mars 20138 avr. 2014Nikon CorporationExposure apparatus, and device manufacturing method
US87049976 juin 200822 avr. 2014Nikon CorporationImmersion lithographic apparatus and method for rinsing immersion space before exposure
US87050015 oct. 201022 avr. 2014Nikon CorporationExposure apparatus, and device manufacturing method
US87050027 oct. 201022 avr. 2014Nikon CorporationStage drive method and stage unit, exposure apparatus, and device manufacturing method
US871132417 déc. 200829 avr. 2014Nikon CorporationExposure method, exposure apparatus, and method for producing device
US871132710 déc. 200829 avr. 2014Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US87113287 oct. 201029 avr. 2014Nikon CorporationStage drive method and stage unit, exposure apparatus, and device manufacturing method
US871753729 mars 20136 mai 2014Nikon CorporationExposure apparatus, and device manufacturing method
US871753826 avr. 20106 mai 2014Carl Zeiss Smt GmbhCatoptric imaging optical system with an arc-shaped object field
US87240797 oct. 201013 mai 2014Nikon CorporationStage drive method and stage unit, exposure apparatus, and device manufacturing method
US87240837 avr. 201113 mai 2014Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US872408422 juil. 201113 mai 2014Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US872408528 mars 201313 mai 2014Nikon CorporationExposure apparatus, and device manufacturing method
US87368087 oct. 201027 mai 2014Nikon CorporationStage drive method and stage unit, exposure apparatus, and device manufacturing method
US873680915 oct. 201027 mai 2014Nikon CorporationExposure apparatus, exposure method, and method for producing device
US87433419 déc. 20103 juin 2014Nikon CorporationImmersion exposure apparatus and immersion exposure method, and device manufacturing method
US874334330 janv. 20133 juin 2014Nikon CorporationApparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US874975728 janv. 201310 juin 2014Nikon CorporationExposure apparatus, method for producing device, and method for controlling exposure apparatus
US87497592 oct. 201210 juin 2014Nikon CorporationExposure apparatus, exposure method, and method for producing device
US87550252 févr. 201117 juin 2014Nikon CorporationSubstrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US87550281 sept. 201117 juin 2014Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US876061725 févr. 201324 juin 2014Nikon CorporationExposure apparatus and method for producing device
US876716829 juin 20111 juil. 2014Nikon CorporationImmersion exposure apparatus and method that detects residual liquid on substrate held by substrate table after exposure
US87671779 sept. 20111 juil. 2014Nikon CorporationExposure apparatus, and device manufacturing method
US876718211 août 20111 juil. 2014Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US878032721 avr. 201115 juil. 2014Nikon CorporationExposure apparatus and method for producing device
US879750014 nov. 20085 août 2014Nikon CorporationImmersion lithography fluid control system changing flow velocity of gas outlets based on motion of a surface
US879750331 mai 20115 août 2014Asml Netherlands B.V.Lithographic apparatus and device manufacturing method with a liquid inlet above an aperture of a liquid confinement structure
US879750517 avr. 20125 août 2014Nikon CorporationExposure apparatus and device manufacturing method
US87975086 nov. 20085 août 2014Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US880409530 sept. 201312 août 2014Nikon CorporationExposure apparatus and device fabrication method
US881076821 oct. 201019 août 2014Nikon CorporationEnvironmental system including vacuum scavenge for an immersion lithography apparatus
US881091529 oct. 201319 août 2014Nikon CorporationOptical arrangement of autofocus elements for use with immersion lithography
US88304432 juin 20119 sept. 2014Nikon CorporationEnvironmental system including a transport region for an immersion lithography apparatus
US883044518 avr. 20129 sept. 2014Nikon CorporationExposure apparatus, and device manufacturing method
US883691421 juin 201216 sept. 2014Nikon CorporationEnvironmental system including vacuum scavenge for an immersion lithography apparatus
US883692913 déc. 201216 sept. 2014Carl Zeiss Smt GmbhDevice and method for the optical measurement of an optical system by using an immersion fluid
US884816619 juil. 201330 sept. 2014Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US884816822 juin 200730 sept. 2014Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US885463220 sept. 20117 oct. 2014Nikon CorporationPattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US886092322 sept. 201114 oct. 2014Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US886702221 août 200821 oct. 2014Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US88790439 nov. 20104 nov. 2014Nikon CorporationExposure apparatus and method for manufacturing device
US88790478 oct. 20104 nov. 2014Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens using a pad member or second stage during wafer exchange in an immersion lithography machine
US889105615 mars 201018 nov. 2014Nikon CorporationStage apparatus and exposure apparatus
US889105918 août 201118 nov. 2014Nikon CorporationLiquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US889680717 juil. 201325 nov. 2014Nikon CorporationApparatus and method for providing fluid for immersion lithography
US890240112 déc. 20122 déc. 2014Carl Zeiss Smt GmbhOptical imaging device with thermal attenuation
US890814521 févr. 20079 déc. 2014Nikon CorporationPattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US892274813 sept. 201230 déc. 2014Nikon CorporationExposure apparatus, exposure method, and device manufacturing method
US894181123 sept. 201127 janv. 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US89476376 sept. 20113 févr. 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US895325014 juil. 201410 févr. 2015Nikon CorporationOptical arrangement of autofocus elements for use with immersion lithography
US89641639 juil. 201224 févr. 2015Asml Netherlands B.V.Immersion lithographic apparatus and device manufacturing method with a projection system having a part movable relative to another part
US896416421 juil. 201124 févr. 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US898232214 mars 200717 mars 2015Nikon CorporationExposure apparatus and device manufacturing method
US900130731 mars 20147 avr. 2015Nikon CorporationExposure apparatus and device manufacturing method
US90075616 juil. 201214 avr. 2015Nikon CorporationImmersion lithography apparatus with hydrophilic region encircling hydrophobic region which encircles substrate support
US90136752 févr. 201221 avr. 2015Nikon CorporationLiquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US901368131 oct. 200821 avr. 2015Nikon CorporationMovable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US901946730 janv. 201328 avr. 2015Nikon CorporationExposure method, substrate stage, exposure apparatus, and device manufacturing method
US901946915 déc. 200628 avr. 2015Nikon CorporationExposure apparatus, exposure method, method for producing device, and optical part
US901947331 mars 201428 avr. 2015Nikon CorporationExposure apparatus and device manufacturing method
US902512916 juin 20145 mai 2015Nikon CorporationExposure apparatus, and device manufacturing method
US90419068 juil. 201326 mai 2015Nikon CorporationImmersion exposure apparatus and method that detects liquid adhered to rear surface of substrate
US90467907 mars 20132 juin 2015Nikon CorporationExposure apparatus and device fabrication method
US905796730 juil. 200916 juin 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US906343820 janv. 201223 juin 2015Nikon CorporationExposure apparatus, exposure method, and method for producing device
US908129818 avr. 200714 juil. 2015Nikon CorporationApparatus for maintaining immersion fluid in the gap under the projection lens during wafer exchange using a co-planar member in an immersion lithography machine
US90812991 août 201114 juil. 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method involving removal of liquid entering a gap
US90866365 janv. 201521 juil. 2015Nikon CorporationOptical arrangement of autofocus elements for use with immersion lithography
US909194020 déc. 201228 juil. 2015Asml Netherlands B.V.Lithographic apparatus and method involving a fluid inlet and a fluid outlet
US909798630 nov. 20124 août 2015Nikon CorporationSubstrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US909798823 juin 20144 août 2015Nikon CorporationExposure apparatus and device manufacturing method
US909799219 juil. 20114 août 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US910370016 août 201111 août 2015Nikon CorporationMeasuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US911038129 juin 201118 août 2015Nikon CorporationSubstrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US911038923 sept. 201118 août 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US913462216 déc. 201315 sept. 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US913462330 avr. 201415 sept. 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US915205625 sept. 20136 oct. 2015Carl Zeiss Smt GmbhImaging optical system and projection exposure system for microlithography
US915205829 juil. 20116 oct. 2015Asml Netherlands B.V.Lithographic apparatus and device manufacturing method involving a member and a fluid opening
US916439625 oct. 201220 oct. 2015Carl Zeiss Smt GmbhProjection lens system of a microlithographic projection exposure installation
US917639326 mai 20093 nov. 2015Asml Netherlands B.V.Lithographic apparatus and a method of operating the apparatus
US91826842 mai 201410 nov. 2015Nikon CorporationExposure apparatus, exposure method, and method for producing device
US918268524 sept. 201310 nov. 2015Nikon CorporationExposure apparatus, exposure method, method for producing device, and optical part
US921793325 avr. 201422 déc. 2015Nikon CorporationApparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US922322424 févr. 200629 déc. 2015Nikon CorporationExposure apparatus with component from which liquid is protected and/or removed and device fabricating method
US922933329 déc. 20085 janv. 2016Nikon CorporationExposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method
US92351333 août 200512 janv. 2016Nikon CorporationLighting optical device, regulation method for lighting optical device, exposure system, and exposure method
US923513930 janv. 201312 janv. 2016Nikon CorporationExposure method, substrate stage, exposure apparatus, and device manufacturing method
US92443627 juil. 201426 janv. 2016Nikon CorporationEnvironmental system including vacuum scavenge for an immersion lithography apparatus
US924436319 août 201426 janv. 2016Nikon CorporationEnvironmental system including a transport region for an immersion lithography apparatus
US92561403 nov. 20089 févr. 2016Nikon CorporationMovable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction
US926823730 janv. 201323 févr. 2016Nikon CorporationExposure method, substrate stage, exposure apparatus, and device manufacturing method
US927443726 mars 20151 mars 2016Nikon CorporationExposure apparatus and device manufacturing method
US92855158 nov. 201315 mars 2016Carl Zeiss Smt GmbhImaging optical system and projection exposure system including the same
US928568322 sept. 201115 mars 2016Nikon CorporationApparatus and method for providing fluid for immersion lithography
US928568420 mai 201315 mars 2016Nikon CorporationExposure method, exposure apparatus, and method for producing device
US930439221 mai 20145 avr. 2016Nikon CorporationExposure apparatus and method for producing device
US930440921 mai 20145 avr. 2016Nikon CorporationLiquid jet and recovery system for immersion lithography
US930441221 août 20085 avr. 2016Nikon CorporationMovable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US931691929 déc. 201419 avr. 2016Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US932906026 mars 20153 mai 2016Nikon CorporationMeasuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US932949317 juil. 20133 mai 2016Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US934823923 mai 201424 mai 2016Nikon CorporationExposure apparatus, exposure method, and method for producing device
US935452520 mai 201331 mai 2016Nikon CorporationExposure method, exposure apparatus, and method for producing device
US938365622 avr. 20155 juil. 2016Nikon CorporationExposure apparatus, exposure method, and method for producing device
US941124829 avr. 20159 août 2016Nikon CorporationExposure apparatus and device fabrication method
US94237053 juin 201423 août 2016Nikon CorporationPattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US943609520 nov. 20126 sept. 2016Carl Zeiss Smt GmbhExposure apparatus and measuring device for a projection lens
US94829629 sept. 20141 nov. 2016Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US94889207 mars 20138 nov. 2016Nikon CorporationExposure method, exposure apparatus, and method for producing device
US94889238 mai 20148 nov. 2016Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US949487129 avr. 201415 nov. 2016Nikon CorporationExposure apparatus, method for producing device, and method for controlling exposure apparatus
US950095929 juil. 201522 nov. 2016Nikon CorporationExposure apparatus and device manufacturing method
US950096026 avr. 201622 nov. 2016Nikon CorporationApparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US950727822 juil. 201529 nov. 2016Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US95135582 mai 20146 déc. 2016Nikon CorporationExposure apparatus, exposure method, and method for producing device
US954184329 nov. 201110 janv. 2017Asml Netherlands B.V.Lithographic apparatus and device manufacturing method involving a sensor detecting a radiation beam through liquid
US954724321 oct. 201417 janv. 2017Nikon CorporationApparatus and method for providing fluid for immersion lithography
US955194326 févr. 201624 janv. 2017Nikon CorporationExposure apparatus and device manufacturing method
US956311615 août 20137 févr. 2017Nikon CorporationMask, exposure apparatus and device manufacturing method
US956884124 mars 201614 févr. 2017Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US96125396 août 20124 avr. 2017Nikon CorporationMovable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head
US961885214 nov. 200811 avr. 2017Nikon CorporationImmersion lithography fluid control system regulating flow velocity of gas based on position of gas outlets
US962343623 janv. 201418 avr. 2017Asml Netherlands B.V.Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US96324271 déc. 201525 avr. 2017Nikon CorporationEnvironmental system including a transport region for an immersion lithography apparatus
US963243122 juin 200725 avr. 2017Nikon CorporationLithographic apparatus and method having substrate and sensor tables
US963900617 févr. 20152 mai 2017Asml Netherlands B.V.Lithographic projection apparatus and device manufacturing method
US964550525 juil. 20139 mai 2017Nikon CorporationImmersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US96585371 déc. 201523 mai 2017Nikon CorporationEnvironmental system including vacuum scavenge for an immersion lithography apparatus
US966501624 mars 201030 mai 2017Nikon CorporationLithographic apparatus and method having substrate table and sensor table to hold immersion liquid
US968424830 mars 201220 juin 2017Nikon CorporationLithographic apparatus having substrate table and sensor table to measure a patterned beam
US969020522 août 201427 juin 2017Nikon CorporationExposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method
US969021422 oct. 201427 juin 2017Nikon CorporationPattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US970321029 déc. 201411 juil. 2017Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US97401079 juin 201622 août 2017Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US974678125 juin 201429 août 2017Nikon CorporationExposure apparatus and method for producing device
US974678813 oct. 201629 août 2017Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US976002624 oct. 201612 sept. 2017Nikon CorporationExposure apparatus, method for producing device, and method for controlling exposure apparatus
US97665553 mai 201619 sept. 2017Nikon CorporationExposure apparatus, exposure method, and method for producing device
US978505731 mars 201610 oct. 2017Nikon CorporationLiquid jet and recovery system for immersion lithography
US97982458 déc. 201024 oct. 2017Nikon CorporationExposure apparatus, and exposure method, with recovery device to recover liquid leaked from between substrate and member
US979824616 juin 201624 oct. 2017Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
US981099517 janv. 20177 nov. 2017Nikon CorporationExposure apparatus and device manufacturing method
US98109963 nov. 20147 nov. 2017Carl Zeiss Smt GmbhOptical imaging device with thermal attenuation
US981731929 déc. 201614 nov. 2017Nikon CorporationApparatus and method for providing fluid for immersion lithography
US985164415 août 201626 déc. 2017Asml Netherlands B.V.Lithographic apparatus and device manufacturing method
USRE435768 janv. 200914 août 2012Asml Netherlands B.V.Dual stage lithographic apparatus and device manufacturing method
USRE4444613 août 201220 août 2013Asml Netherlands B.V.Dual stage lithographic apparatus and device manufacturing method
USRE4557619 août 201323 juin 2015Asml Netherlands B.V.Dual stage lithographic apparatus and device manufacturing method
Classifications
Classification internationaleG03F7/20, G02B17/00
Classification coopérativeG03F7/70966, G03F7/70341, G03F7/70225, G03F7/70958, G02B17/0828, G02B17/0892, G03F7/7035
Classification européenneG03F7/70F24, G03F7/70F26, G03F7/70F2, G03F7/70P10B2, G03F7/70P10B, G02B17/08U, G02B17/08B2
Événements juridiques
DateCodeÉvénementDescription
14 juin 2005WWEWipo information: entry into national phase
Ref document number: 11151465
Country of ref document: US
30 juin 2005AKDesignated states
Kind code of ref document: A2
Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW
30 juin 2005ALDesignated countries for regional patents
Kind code of ref document: A2
Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG
24 août 2005121Ep: the epo has been informed by wipo that ep was designated in this application
19 janv. 2006WWPWipo information: published in national office
Ref document number: 11151465
Country of ref document: US
23 mai 2006WWEWipo information: entry into national phase
Ref document number: 2006543484
Country of ref document: JP
15 juin 2006WWEWipo information: entry into national phase
Ref document number: 1020067011811
Country of ref document: KR
16 juin 2006NENPNon-entry into the national phase in:
Ref country code: DE
16 juin 2006WWWWipo information: withdrawn in national office
Country of ref document: DE
5 juil. 2006WWEWipo information: entry into national phase
Ref document number: 2004803712
Country of ref document: EP
6 sept. 2006WWPWipo information: published in national office
Ref document number: 2004803712
Country of ref document: EP
23 oct. 2006WWPWipo information: published in national office
Ref document number: 1020067011811
Country of ref document: KR